28LV64A--30/P [MICROCHIP]

64K (8K x 8) Low Voltage CMOS EEPROM; 64K ( 8K ×8 )低电压CMOS EEPROM
28LV64A--30/P
型号: 28LV64A--30/P
厂家: MICROCHIP    MICROCHIP
描述:

64K (8K x 8) Low Voltage CMOS EEPROM
64K ( 8K ×8 )低电压CMOS EEPROM

存储 内存集成电路 光电二极管 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件: 总10页 (文件大小:132K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Obsolete Device  
28LV64A  
64K (8K x 8) Low Voltage CMOS EEPROM  
FEATURES  
PACKAGE TYPES  
• 2.7V to 3.6V Supply  
RDY/BSY  
A12  
A7  
• 1  
2
28 Vcc  
27 WE  
26 NC  
25 A8  
• Read Access Time—300 ns  
• CMOS Technology for Low Power Dissipation  
- 8 mA Active  
- 50 µA CMOS Standby Current  
• Byte Write Time—3 ms  
• Data Retention >200 years  
• High Endurance - Minimum 100,000 Erase/Write  
Cycles  
• Automatic Write Operation  
- Internal Control Timer  
3
A6  
4
A6  
A5  
A4  
A3  
A2  
A1 10  
A0 11  
NC 12  
I/O0 13  
5
6
7
8
9
29 A8  
28 A9  
A5  
5
24 A9  
A4  
6
23 A11  
22 OE  
21 A10  
20 CE  
19 I/O7  
18 I/O6  
17 I/O5  
16 I/O4  
15 I/O3  
27 A11  
26 NC  
25 OE  
24 A10  
23 CE  
22 I/O7  
21 I/O6  
A3  
7
A2  
8
A1  
9
A0  
10  
11  
12  
13  
I/O0  
I/O1  
I/O2  
VSS 14  
-
Auto-Clear Before Write Operation  
• Pin 1 indicator on PLCC on top of package  
- On-Chip Address and Data Latches  
• Data Polling  
• Ready/Busy  
• Chip Clear Operation  
BLOCK DIAGRAM  
I/O0...................I/O7  
• Enhanced Data Protection  
- VCC Detector  
- Pulse Filter  
VSS  
VCC  
Data Protection  
Circuitry  
Chip Enable/  
Output Enable  
Control Logic  
CE  
- Write Inhibit  
OE  
• Electronic Signature for Device Identification  
• Organized 8Kx8 JEDEC Standard Pinout  
- 28-pin Dual-In-Line Package  
- 32-pin Chip Carrier (Leadless or Plastic)  
• Available for Extended Temperature Ranges:  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
Auto Erase/Write  
Timing  
Data  
Poll  
WE  
Input/Output  
Buffers  
Rdy/  
Busy  
Program Voltage  
Generation  
A0  
Y
I
I
I
I
I
I
I
I
Y Gating  
Decoder  
L
a
t
c
h
e
s
64K bit  
Cell Matrix  
X
DESCRIPTION  
Decoder  
I
I
I
The Microchip Technology Inc. 28LV64A is a CMOS 64K non-vol-  
atile electrically Erasable PROM organized as 8K words by 8 bits.  
The 28LV64A is accessed like a static RAM for the read or write  
cycles without the need of external components. During a “byte  
write”, the address and data are latched internally, freeing the  
microprocessor address and data bus for other operations. Fol-  
lowing the initiation of write cycle, the device will go to a busy state  
and automatically clear and write the latched data using an inter-  
nal control timer. To determine when the write cycle is complete,  
the user has a choice of monitoring the Ready/Busy output or  
using Data polling. The Ready/Busy pin is an open drain output,  
which allows easy configuration in ‘wired-or’ systems. Alterna-  
tively, Data polling allows the user to read the location last written  
to when the write operation is complete. CMOS design and pro-  
cessing enables this part to be used in systems where reduced  
power consumption and reliability are required. A complete family  
of packages is offered to provide the utmost flexibility in applica-  
tions.  
A12  
2004 Microchip Technology Inc.  
Preliminary  
DS21113E-page 1  
28LV64A  
TABLE 1-1:  
PIN FUCTION TABLE  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Name  
A0 - A12  
CE  
Function  
Address Inputs  
Chip Enable  
MAXIMUM RATINGS*  
VCC and input voltages w.r.t. VSS ...... -0.6V to + 6.25V  
Voltage on OE w.r.t. VSS......................-0.6V to +13.5V  
Voltage on A9 w.r.t. VSS ......................-0.6V to +13.5V  
Output Voltage w.r.t. VSS ............... -0.6V to VCC+0.6V  
Storage temperature ..........................-65°C to +150°C  
Ambient temp. with power applied .....-55°C to +125°C  
OE  
Output Enable  
Write Enable  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
RDY/Busy Ready/Busy  
VCC  
VSS  
NC  
+ Power Supply  
*Notice: Stresses above those listed under “Maximum Ratings” may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at those or any other conditions  
above those indicated in the operation listings of this specification is  
not implied. Exposure to maximum rating conditions for extended  
periods may affect device reliability.  
Ground  
No Connect; No Internal Connection  
NU  
Not Used; No External Connection is  
Allowed  
TABLE 1-2:  
READ/WRITE OPERATION DC CHARACTERISTICS  
VCC = 2.7 to 3.6V  
Commercial (C): Tamb = 0°C to 70°C  
Industrial  
(I): Tamb = -40°C to 85°C  
Parameter  
Status  
Symbol  
Min  
Max Units  
Conditions  
Input Voltages  
Logic “1”  
Logic “2”  
VIH  
VIL  
2.0  
V
V
0.6  
5
Input Leakage  
ILI  
µA VIN = 0V to VCC+1  
Input Capacitance  
CIN  
6
pF Vin = 0V; Tamb = 25°C;  
f = 1 MHz (Note 1)  
Output Voltages  
Logic “1”  
Logic “0”  
VOH  
VOL  
2.0  
V
V
IOH = -100µA  
IOL = 1.0 mA  
0.3  
I0L = 2.0 mA for RDY/Busy  
Output Leakage  
ILO  
5
µA VOUT = 0V to VCC+0.1V  
Output Capacitance  
COUT  
12  
pF VOUT = 0V; Tamb = 25°C;  
f = 1 MHz (Note 1)  
Power Supply Current, Activity  
Power Supply Current, Standby  
TTL input  
ICC  
8
mA f = 5 MHz (Note 2)  
IO = OmA  
VCC = 3.3  
CE = VIL  
TTL input  
TTL input  
CMOS input ICC(S)CMOS  
ICC(S)TTL  
ICC(S)TTL  
2
3
100  
mA CE = VIH (0°C to 70°C°)  
mA CE = VIH (-40°C to 85°C°)  
µA CE = VCC -3.0 to VCC+1  
OE = WE = VCC  
All other inputs equal VCC or  
VSS  
Note 1: Not 100% tested.  
2: AC power supply current above 5 MHz: 2 mA/Mhz.  
DS21113E-page 2  
Preliminary  
2004 Microchip Technology Inc.  
28LV64A  
TABLE 1-3:  
READ OPERATION AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2  
1 TTL Load + 100 pF  
Input Rise and Fall  
Times:  
20 ns  
Commercial (C): Tamb = 0°C to +70°C  
Ambient Temperature:  
Industrial  
(I) : Tamb = -40°C to +85°C  
28LV64-30  
Parameter  
Sym  
Units  
Conditions  
Min  
0
Max  
300  
300  
150  
60  
Address to Output Delay  
CE to Output Delay  
tACC  
tCE  
ns  
ns  
ns  
ns  
ns  
OE = CE = VIL  
OE = VIL  
CE = VIL  
OE to Output Delay  
tOE  
CE or OE High to Output Float  
tOFF  
tOH  
(Note 1)  
Output Hold from Address, CE or  
OE, whichever occurs first.  
0
(Note 1)  
Endurance  
10M  
cycles  
25°C, Vcc = 5.0V,  
Block Mode (Note 2)  
Note 1: Not 100% tested.  
2: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific  
application, please consult the Total Endurance Model which can be obtained on our BBS or website.  
FIGURE 1-1: READ WAVEFORMS  
VIH  
Address  
CE  
Address Valid  
VIL  
VIH  
VIL  
tCE(2)  
VIH  
VIL  
OE  
tOFF(1,3)  
tOH  
tOE(2)  
VOH  
VOL  
High Z  
High Z  
Data  
Valid Output  
tACC  
VIH  
VIL  
WE  
Notes: (1) tOFF is specified for OE or CE, whichever occurs first  
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE  
(3) This parameter is sampled and is not 100% tested  
2004 Microchip Technology Inc.  
Preliminary  
DS21113E-page 3  
28LV64A  
TABLE 1-4:  
BYTE WRITE AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
VIH = 2.0V; VIL = 0.6V; VOH = VOL = VCC/2  
1 TTL Load + 100 pF  
Input Rise/Fall Times:  
Ambient Temperature:  
20 ns  
Commercial (C): Tamb = 0°C to +70°C  
Industrial  
(I) : Tamb = -40°C to +85°C  
Parameter  
Sym  
tAS  
Min  
10  
Max  
Units  
ns  
Remarks  
Address Set-Up Time  
Address Hold Time  
Data Set-Up Time  
Data Hold Time  
tAH  
100  
120  
10  
ns  
tDS  
ns  
tDH  
ns  
Write Pulse Width  
OE Hold Time  
tWPL  
tOEH  
tOES  
tDV  
150  
10  
ns  
(Note 1)  
ns  
OE Set-Up Time  
10  
ns  
Data Valid Time  
1000  
50  
ns  
(Note 2)  
Time to Device Busy  
Write Cycle Time (28LV64A)  
tDB  
ns  
tWC  
3
ms  
1.5 ms typical  
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the  
positive edge of CE or WE, whichever occurs first.  
2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH  
after the positive edge of WE or CE, whichever occurs first.  
FIGURE 1-2: PROGRAMMING WAVEFORMS  
VIH  
Address  
VIL  
tAS  
tAH  
tWPL  
VIH  
VIL  
CE, WE  
Data In  
tDH  
tDV  
tDS  
VIH  
VIL  
tOES  
VIH  
VIL  
OE  
tOEH  
tDB  
VOH  
VOL  
Busy  
Ready  
Rdy/Busy  
twc  
DS21113E-page 4  
Preliminary  
2004 Microchip Technology Inc.  
28LV64A  
FIGURE 1-3: DATA POLLING WAVEFORMS  
VIH  
Last Written  
Address Valid  
Address Valid  
Address  
CE  
VIL  
t ACC  
VIH  
VIL  
tCE  
t WPH  
VIH  
VIL  
tWPL  
WE  
tOE  
VIH  
VIL  
OE  
tDV  
VIH  
VIL  
Data In  
Valid  
True Data Out  
Data  
I/O7 Out  
tWC  
FIGURE 1-4: CHIP CLEAR WAVEFORMS  
V
IH  
IL  
CE  
V
V
H
OE  
VIH  
t
S
tH  
t
W
V
IH  
IL  
WE  
t
W
= 10ms  
= = 1µs  
tH  
V
tS  
= 12.0V ±0.5V  
VH  
TABLE 1-5:  
SUPPLEMENTARY CONTROL  
Mode  
CE  
OE  
WE  
AI  
VCC  
I/OI  
Chip Clear  
VIL  
VIL  
VH  
VIL  
VIH  
X
VCC  
VCC  
VCC  
Extra Row Read  
Extra Row Write  
Note: VH = 12.0V ± 0.5V  
VIH  
A9 = VH  
A9 = VH  
Data Out  
Data In  
2004 Microchip Technology Inc.  
Preliminary  
DS21113E-page 5  
28LV64A  
2.4  
Write Mode  
2.0  
DEVICE OPERATION  
The Microchip Technology Inc. 28LV64A has four  
basic modes of operation—read, standby, write inhibit,  
and byte write—as outlined in the following table.  
The 28LV64A has a write cycle similar to that of a  
static RAM. The write cycle is completely self-timed  
and initiated by a low going pulse on the WE pin. On  
the falling edge of WE, the address information is  
latched. On rising edge, the data and the control pins  
(CE and OE) are latched. The Ready/Busy pin goes  
to a logic low level indicating that the 28LV64A is in a  
write cycle which signals the microprocessor host that  
the system bus is free for other activity. When  
Ready/Busy goes back to a high, the 28LV64A has  
completed writing and is ready to accept another  
cycle.  
Operation Mode CE OE WE I/O  
Rdy/Busy (1)  
Read  
Standby  
L
L
X
X
L
X
H
H
X
X
X
H
L
D
OUT  
H
H
H
H
H
L
H
H
X
X
L
High Z  
High Z  
High Z  
High Z  
Write Inhibit  
Write Inhibit  
Write Inhibit  
Byte Write  
Byte Clear  
DIN  
2.5  
Data Polling  
Automatic Before Each "Write"  
Note: (1) Open drain output.  
The 28LV64A features Data polling to signal the com-  
pletion of a byte write cycle. During a write cycle, an  
attempted read of the last byte written results in the  
data complement of I/O7 (I/O0 to I/O6 can not be  
determined). After completion of the write cycle, true  
data is available. Data polling allows a simple  
read/compare operation to determine the status of the  
chip eliminating the need for external hardware.  
2.1  
Read Mode  
The 28LV64A has two control functions, both of which  
must be logically satisfied in order to obtain data at the  
outputs. Chip enable (CE) is the power control and  
should be used for device selection. Output Enable  
(OE) is the output control and is used to gate data to  
the output pins independent of device selection.  
Assuming that addresses are stable, address access  
time (tACC) is equal to the delay from CE to output  
(tCE). Data is available at the output tOE after the fall-  
ing edge of OE, assuming that CE has been low and  
addresses have been stable for at least tACC-tOE.  
2.6  
Electronic Signature for Device  
Identification  
An extra row of 32 bytes of EEPROM memory is avail-  
able to the user for device identification. By raising A9  
to 12V ±0.5V and using address locations 1FEO to  
1FFF, the additional bytes can be written to or read  
from in the same manner as the regular memory array.  
2.2  
Standby Mode  
2.7  
Chip Clear  
The 28LV64A is placed in the standby mode by apply-  
ing a high signal to the CE input. When in the standby  
mode, the outputs are in a high impedance state, inde-  
pendent of the OE input.  
All data may be cleared to 1's in a chip clear cycle by  
raising OE to 12 volts and bringing the WE and CE  
low. This procedure clears all data, except for the  
extra row.  
2.3  
Data Protection  
In order to ensure data integrity, especially during criti-  
cal power-up and power-down transitions, the follow-  
ing enhanced data protection circuits are incorporated:  
First, an internal VCC detect (2.0 volts typical) will  
inhibit the initiation of non-volatile programming opera-  
tion when VCC is less than the VCC detect circuit trip.  
Second, holding WE or CE high or OE low, inhibits a  
write cycle during power-on and power-off (VCC).  
DS21113E-page 6  
Preliminary  
2004 Microchip Technology Inc.  
28LV64A  
28LV64A Product Identification System  
To order or to obtain information (e.g., on pricing or delivery), please use the listed part numbers, and refer to the factory or the listed  
sales offices.  
28LV64A –  
F
T – 20  
I
/P  
Package:  
L = Plastic Leaded Chip Carrier (PLCC)  
P = Plastic DIP  
SO = Plastic Small Outline IC  
Temperature  
Range:  
Blank = 0°C to +70°C  
I = -40°C to +85°C  
Access Time:  
Shipping:  
20 = 200 ns  
30 - 300 ns  
Blank = Tube  
T = Tape and Reel “L” and “SO”  
Option:  
Device:  
Blank = twc = 1ms  
F = twc = 200µs  
24LV64A 8K x 8 CMOS EEPROM  
2004 Microchip Technology Inc.  
DS21113E-page 7  
28LV64A  
NOTES:  
DS21113E-page 8  
Preliminary  
2004 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is intended through suggestion only  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
No representation or warranty is given and no liability is  
assumed by Microchip Technology Incorporated with respect  
to the accuracy or use of such information, or infringement of  
patents or other intellectual property rights arising from such  
use or otherwise. Use of Microchip’s products as critical  
components in life support systems is not authorized except  
with express written approval by Microchip. No licenses are  
conveyed, implicitly or otherwise, under any intellectual  
property rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, Accuron,  
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,  
PRO MATE, PowerSmart, rfPIC, and SmartShunt are  
registered trademarks of Microchip Technology Incorporated  
in the U.S.A. and other countries.  
AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,  
SmartSensor and The Embedded Control Solutions Company  
are registered trademarks of Microchip Technology  
Incorporated in the U.S.A.  
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,  
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,  
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial  
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,  
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,  
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,  
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,  
SmartTel and Total Endurance are trademarks of Microchip  
Technology Incorporated in the U.S.A. and other countries.  
SQTP is a service mark of Microchip Technology Incorporated  
in the U.S.A.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2004, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
Microchip received ISO/TS-16949:2002 quality system certification for  
its worldwide headquarters, design and wafer fabrication facilities in  
Chandler and Tempe, Arizona and Mountain View, California in  
October 2003. The Company’s quality system processes and  
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
2004 Microchip Technology Inc.  
Preliminary  
DS21113E-page 9  
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Rm. 1812, 18/F, Building A, United Plaza  
No. 5022 Binhe Road, Futian District  
Shenzhen 518033, China  
Tel: 86-755-82901380  
Fax: 86-755-8295-1393  
China - Shunde  
Fax: 248-538-2260  
Kokomo  
2767 S. Albright Road  
Kokomo, IN 46902  
Tel: 765-864-8360  
Fax: 765-864-8387  
Room 401, Hongjian Building, No. 2  
Fengxiangnan Road, Ronggui Town, Shunde  
District, Foshan City, Guangdong 528303, China  
Tel: 86-757-28395507 Fax: 86-757-28395571  
Los Angeles  
25950 Acero St., Suite 200  
Mission Viejo, CA 92691  
Tel: 949-462-9523  
Germany  
China - Qingdao  
Rm. B505A, Fullhope Plaza,  
No. 12 Hong Kong Central Rd.  
Qingdao 266071, China  
Tel: 86-532-5027355 Fax: 86-532-5027205  
Steinheilstrasse 10  
D-85737 Ismaning, Germany  
Tel: 49-89-627-144-0  
Fax: 49-89-627-144-44  
Fax: 949-462-9608  
San Jose  
1300 Terra Bella Avenue  
Mountain View, CA 94043  
Tel: 650-215-1444  
Italy  
India  
Via Salvatore Quasimodo, 12  
20025 Legnano (MI)  
Milan, Italy  
Divyasree Chambers  
1 Floor, Wing A (A3/A4)  
No. 11, O’Shaugnessey Road  
Bangalore, 560 025, India  
Tel: 91-80-22290061 Fax: 91-80-22290062  
Japan  
Fax: 650-961-0286  
Tel: 39-0331-742611  
Fax: 39-0331-466781  
Netherlands  
Waegenburghtplein 4  
NL-5152 JR, Drunen, Netherlands  
Tel: 31-416-690399  
Toronto  
6285 Northam Drive, Suite 108  
Mississauga, Ontario L4V 1X5, Canada  
Tel: 905-673-0699  
Yusen Shin Yokohama Building 10F  
3-17-2, Shin Yokohama, Kohoku-ku,  
Yokohama, Kanagawa, 222-0033, Japan  
Tel: 81-45-471- 6166 Fax: 81-45-471-6122  
Fax: 905-673-6509  
Fax: 31-416-690340  
ASIA/PACIFIC  
Australia  
Microchip Technology Australia Pty Ltd  
Unit 32 41 Rawson Street  
Epping 2121, NSW  
Sydney, Australia  
Tel: 61-2-9868-6733  
Fax: 61-2-9868-6755  
United Kingdom  
505 Eskdale Road  
Winnersh Triangle  
Korea  
168-1, Youngbo Bldg. 3 Floor  
Samsung-Dong, Kangnam-Ku  
Seoul, Korea 135-882  
Wokingham  
Berkshire, England RG41 5TU  
Tel: 44-118-921-5869  
Fax: 44-118-921-5820  
Tel: 82-2-554-7200 Fax: 82-2-558-5932 or  
82-2-558-5934  
07/12/04  
Preliminary  
2004 Microchip Technology Inc.  

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