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5961-01-381-8551 [MICROCHIP]

TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,50MA I(D),TO-92;
5961-01-381-8551
型号： 5961-01-381-8551
厂家： MICROCHIP    MICROCHIP
描述：

TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,50MA I(D),TO-92
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VN0550  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Features  
General Description  
► Free from secondary breakdown  
► Low power drive requirement  
► Ease of paralleling  
► Low CISS and fast switching speeds  
► Excellent thermal stability  
► Integral SOURCE-DRAIN diode  
► High input impedance and high gain  
► Complementary N- and P-Channel devices  
The Supertex VN0550 is an enhancement-mode (normally-  
off) transistor that utilizes a vertical DMOS structure  
and Supertex’s well-proven silicon-gate manufacturing  
process. This combination produces a device with the  
power handling capabilities of bipolar transistors, and the  
high input impedance and positive temperature coefficient  
inherent in MOS devices. Characteristic of all MOS  
structures, this device is free from thermal runaway and  
thermally-induced secondary breakdown.  
Applications  
► Motor controls  
► Converters  
► Amplifiers  
► Switches  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
► Power supply circuits  
► Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Ordering Information  
RDS(ON)  
(max)  
(Ω)  
ID(ON)  
BVDSS/BVDGS  
Device  
Package  
(min)  
(mA)  
(V)  
VN0550N3  
TO-92  
500  
60  
150  
VN0550N3-G  
-G indicates package is RoHS compliant (‘Green’)  
Absolute Maximum Ratings  
Parameter  
Pin Configuration  
Value  
BVDSS  
BVDGS  
20V  
Drain to source voltage  
Drain to gate voltage  
Gate to source voltage  
Operating and storage temperature  
Soldering temperature1  
-55°C to +150°C  
+300°C  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
S G D  
TO-92  
(front view)  
Notes:  
1. Distance of 1.6mm from case for 10 seconds.  
VN0550  
Electrical Characteristics (TA = 25°C unless otherwise specified)  
Symbol Parameter  
Min  
Typ  
Max  
-
4.0  
-5.0  
100  
10  
Units Conditions  
BVDSS  
VGS(th)  
Drain-to-source breakdown voltage  
Gate threshold voltage  
500  
2.0  
-
-
V
V
VGS = 0V, ID = 1.0mA  
VGS = VDS, ID = 1.0mA  
ΔVGS(th) Change in VGS(th) with temperature  
-
-
-
-3.8  
mV/OC VGS = VDS, ID = 1.0mA  
IGSS  
Gate body leakage current  
-
-
nA  
µA  
VGS = 20V, VDS = 0V  
VGS = 0V, VDS = Max Rating  
IDSS  
Zero gate voltage drain current  
V
GS = 0V, VDS = 0.8 Max Rating,  
-
-
1.0  
mA  
TA = 125OC  
-
100  
350  
45  
-
-
VGS = 5.0V, VDS = 25V  
ID(ON)  
ON-state drain current  
mA  
150  
VGS = 10V, VDS = 25V  
VGS = 5.0V, ID = 50mA  
VGS = 10V, ID = 50mA  
-
-
-
-
Static drain-to-source  
ON-state resistance  
RDS(ON)  
Ω
40  
60  
1.7  
ΔRDS(ON) Change in RDS(ON) with temperature  
1.0  
%/OC VGS = 10V, ID = 50mA  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transconductance  
Input capacitance  
50  
-
100  
45  
8.0  
2.0  
-
-
mmho VDS = 25V, ID = 50mA  
55  
10  
5.0  
10  
15  
10  
10  
-
Common source output capacitance  
Reverse transfer capacitance  
Turn-ON time  
-
pF  
ns  
VGS = 0V, VDS = 25V, f = 1.0MHz  
-
-
VDD = 25V,  
ID = 150mA,  
RGEN = 25Ω  
Rise time  
-
-
td(OFF)  
tf  
Turn-OFF time  
-
-
Fall time  
-
VSD  
Diode forward voltage drop  
Reverse recovery time  
-
0.8  
V
VGS = 0V, ISD = 500mA  
VGS = 0V, ISD = 500mA  
trr  
-
300  
-
ns  
Notes:  
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
Thermal Characteristics  
ID  
ID  
Power Dissipation  
*
θJC  
IDR  
IDRM  
θJA  
O
(continuous)* (pulsed)  
@T = 25 C  
Device  
Package  
(OC/W)  
(OC/W)  
(mA)  
(mA)  
(mA)  
(mA)  
C(W)  
VN0550  
TO-92  
50  
250  
1.0  
125  
170  
50  
250  
Notes:  
* ID (continuous) is limited by max rated TJ.  
VDD  
RL  
Switching Waveforms and Test Circuit  
10V  
90%  
INPUT  
PULSE  
GENERATOR  
10%  
0V  
OUTPUT  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
RGEN  
tr  
tF  
VDD  
0V  
D.U.T.  
10%  
10%  
INPUT  
OUTPUT  
90%  
90%  
2
VN0550  
Typical Performance Curves  
Output Characteristics  
Saturation Characteristics  
VGS = 10V  
0.5  
0.25  
0.20  
0.15  
0.10  
0.05  
0
V
= 10V  
GS  
8V  
6V  
0.4  
0.3  
0.2  
0.1  
0
8V  
6V  
4V  
4V  
0
2
4
6
8
10  
0
10  
20  
30  
40  
50  
VDS (volts)  
VDS (volts)  
Transconductance vs. Drain Current  
Power Dissipation vs. Case Temperature  
0.40  
0.32  
0.24  
0.16  
0.08  
0
10  
8
V
= 25V  
DS  
T
= -55°C  
= 25°C  
A
6
T
A
4
T
= 125°C  
A
2
TO-92  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
25  
50  
75  
100  
125  
150  
ID (amperes)  
TC (°C)  
Maximum Rated Safe Operating Area  
Thermal Response Characteristics  
1.0  
0.1  
1.0  
0.8  
0.6  
0.4  
0.2  
TO-92 (DC)  
0.01  
0.001  
TO-92  
PD = 1W  
TC = 25°C  
T
= 25°C  
C
0
1
10  
100  
1000  
0.001  
0.01  
0.1  
1
10  
VDS (volts)  
tp (seconds)  
3
VN0550  
Typical Performance Curves (cont.)  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
100  
80  
60  
40  
20  
0
1.1  
1.0  
0.9  
V
= 5V  
GS  
V
= 10V  
GS  
-50  
0
50  
100  
150  
0
0.1  
0.2  
0.3  
0.4  
0.5  
ID (amperes)  
Tj (°C)  
Transfer Characteristics  
V(th) and RDS Variation with Temperature  
0.5  
0.4  
0.3  
0.2  
0.1  
0
1.4  
1.2  
1.0  
0.8  
0.6  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 25V  
DS  
R
@ 10V, 50mA  
DS(ON)  
= -55  
°C  
T
25°C  
A
V
@ 1mA  
(th)  
150°C  
0
2
4
6
8
10  
-50  
0
50  
100  
150  
VGS (volts)  
Tj(°C)  
Capacitance vs. Drain-to-Source Voltage  
Gate Drive Dynamic Characteristics  
100  
75  
50  
25  
0
10  
8
V
= 10V  
DS  
f = 1MHz  
105 pF  
6
C
ISS  
V
= 40V  
DS  
4
112 pF  
2
0
C
C
OSS  
50 pF  
RSS  
0.6  
0
10  
20  
30  
40  
0
0.2  
0.4  
0.8  
1.0  
QG (nanocoulombs)  
VDS (volts)  
4
VN0550  
TO-92 Package Outline  
0.135 MIN  
0.125 - 0.165  
0.080 - 0.105  
1
3
2
Bottom View  
0.175 - 0.205  
0.170 - 0.210  
1 2 3  
Seating Plane  
0.500 MIN  
0.014 - 0.022  
0.014 - 0.022  
0.045 - 0.055  
0.095 - 0.105  
Front View  
Side View  
Notes:  
All dimensions are in millimeters; all angles in degrees.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
information go to http://www.supertex.com/packaging.html.)  
Doc.# DSFP-VN0550  
A042607  
5

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