5961-01-453-9673 [MICROCHIP]
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,TO-243AA;
| 型号： | 5961-01-453-9673 |
| 厂家： | 
MICROCHIP |
| 描述： | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,TO-243AA |
| 文件： | 总4页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN2510
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
VGS(th)
ID(ON)
(min)
Die†
BVDGS
(max)
(max)
TO-243AA*
100V
1.5Ω
2.0V
3.0A
TN2510N8
TN2510ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
† MIL visual screening available.
Product marking for TO-243AA:
TN5A❋
Where❋=2-weekalphadatecode
Features
❏
❏
❏
❏
❏
❏
❏
❏
Low threshold —2.0V max.
High input impedance
Low input capacitance — 125pF max.
Fast switching speeds
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, highbreakdownvoltage, highinputimpedance, lowinput
capacitance, and fast switching speeds are desired.
Applications
❏
❏
❏
❏
❏
❏
❏
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Package Option
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
D
G
D
S
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
TO-243AA
(SOT-89)
BVDSS
BVDGS
± 20V
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN2510
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*
IDRM
@ TA = 25°C
°C/W
°C/W
TO-243AA
0.73A
5.0A
1.6W†
15
78†
0.73A
5.0A
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
Drain-to-Source
BVDSS
Breakdown Voltage
100
0.6
V
VGS = 0V, ID = 2mA
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
2.0
-4.5
100
10
V
mV/°C
nA
VGS = VDS, ID= 1mA
VGS = VDS, ID= 1.0mA
VGS = ± 20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
1.0
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
1.2
3.0
2.0
6.0
VGS = 5.0V, VDS = 25V
A
V
GS = 10V, VDS = 25V
Static Drain-to-Source
ON-State Resistance
RDS(ON)
15
2.0
VGS = 3.0V, ID = 250mA
VGS = 4.5V, ID = 750mA
1.5
1.0
Ω
1.5
VGS = 10V, ID = 750mA
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
VGS = 10V, ID = 750mA
VDS = 25V, ID = 1.0A
Ω
0.4
0.8
70
30
15
125
70
25
10
10
20
10
1.8
VGS = 0V, VDS = 25V
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
f = 1 MHz
VDD = 25V,
ID = 1.5A,
Rise Time
RGEN = 25Ω
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
VGS = 0V, ISD = 1.5A
VGS = 0V, ISD = 1.5A
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VDD
Switching Waveforms and Test Circuit
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2
TN2510
Typical Performance Curves
°
°
°
°
°
°
3
TN2510
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.1
10
8
V
= 5V
GS
6
V
= 10V
GS
1.0
4
2
0
0.9
-50
0
50
100
150
0
2
4
6
8
10
ID (amperes)
Tj (°C)
Transfer Characteristics
V(th) and RDS Variation with Temperature
10
8
1.2
1.1
1.0
0.9
0.8
2.0
1.6
1.2
0.8
0.4
V
= 25V
GS
T
= -55°C
A
R
@ 5V, 0.75A
DS(ON)
V
@ 1mA
(th)
6
25°C
4
125°C
2
0
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
100
75
10
8
f = 1MHz
V
= 10V
DS
CISS
6
V
= 40V
DS
50
25
4
190 pF
COSS
2
0
CRSS
70pF
0
1.5
0
10
20
30
40
0
0.5
1.0
2.0
2.5
QG (nanocoulombs)
VDS (volts)
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
相关型号：
5961-01-536-6695
TRANSISTOR TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,15A I(C),TO-247VAR, Insulated Gate BIP Transistor
TOSHIBA
©2020 ICPDF网 联系我们和版权申明