AT28C010E-12DM_技术文档

AT28C010

Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM

Features

•

Fast Read Access Time: 120 ns

Automatic Page Write Operation:

– Internally organized as 131,072 x 8 (1 Mbit)

– Internal address and data latches for 128 bytes

– Internal control timer

•

Fast Write Cycle Time:

– Page Write cycle time: 10 ms maximum

– 1 to 128-byte Page Write operation

Low-Power Dissipation:

– 80 mA active current

– 300 µA CMOS standby current

Hardware and Software Data Protection

DATA Polling for End of Write Detection

High Reliability CMOS Technology:

– Endurance: 10,000 or 100,000 cycles

– Data retention: 10 years

•

Single 5V ± 10% Supply

CMOS and TTL Compatible Inputs and Outputs

JEDEC^®Approved Byte-Wide Pinout

Packages

•

32-Lead CERDIP, 32-Lead Flatpack, 32-Lead CLCC and 30-Pin PGA

DS20006311A-page 1

AT28C010

Table of Contents

Features......................................................................................................................................................... 1

Packages........................................................................................................................................................1

1. Package Types (not to scale)..................................................................................................................4

2. Pin Descriptions...................................................................................................................................... 5

3. Description.............................................................................................................................................. 6

3.1. Block Diagram..............................................................................................................................6

4. Electrical Characteristics.........................................................................................................................7

4.1. Absolute Maximum Ratings..........................................................................................................7

4.2. DC and AC Operating Range.......................................................................................................7

4.3. DC Characteristics....................................................................................................................... 7

4.4. Pin Capacitance........................................................................................................................... 8

5. Device Operation.................................................................................................................................... 9

5.1. Operating Modes........................................................................................................................10

5.2. AC Read Characteristics............................................................................................................10

5.3. AC Read Waveforms..................................................................................................................11

5.4. Input Test Waveforms and Measurement Level......................................................................... 11

5.5. Output Test Load........................................................................................................................ 11

5.6. AC Write Characteristics............................................................................................................ 12

5.7. AC Write Waveforms..................................................................................................................12

5.8. Page Mode Characteristics........................................................................................................ 13

5.9. Page Mode Write Waveforms^(1,2)...............................................................................................14

5.10. Chip Erase Waveforms...............................................................................................................14

5.11. Software Data Protection Enable Algorithm⁽¹⁾............................................................................15

5.12. Software Data Protection Disable Algorithm⁽¹⁾...........................................................................16

5.13. Software Protected Program Cycle Waveform^(1,2,3)...................................................................17

5.14. Data Polling Characteristics⁽¹⁾....................................................................................................17

5.15. Data Polling Waveforms.............................................................................................................18

5.16. Toggle Bit Characteristics⁽¹⁾....................................................................................................... 18

5.17. Toggle Bit Waveforms.................................................................................................................18

6. Packaging Information.......................................................................................................................... 20

6.1. Package Marking Information.....................................................................................................20

7. Revision History.................................................................................................................................... 26

The Microchip Website.................................................................................................................................27

Product Change Notification Service............................................................................................................27

Customer Support........................................................................................................................................ 27

Product Identification System.......................................................................................................................28

Microchip Devices Code Protection Feature................................................................................................29

DS20006311A-page 2

AT28C010

Legal Notice................................................................................................................................................. 29

Trademarks.................................................................................................................................................. 30

Quality Management System....................................................................................................................... 30

Worldwide Sales and Service.......................................................................................................................31

DS20006311A-page 3

AT28C010

Package Types (not to scale)

1.

Package Types (not to scale)

32-Lead CLCC

32-Lead CERDIP

Top View

NC

A16

A15

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

GND

1

2

3

4

5

6

7

8

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

V_CC

WE

NC

A14

A13

A8

A9

A11

OE

A7

A6

A5

A4

A3

5

6

7

8

9

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

9

A2 10

A1 11

A0 12

I/O0 13

10

11

12

13

14

15

16

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

32-Lead FLATPACK

30-Pin PGA

Top View

NC

A16

A15

A12

A7

1

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

V_CC

WE

NC

2

A6

A5

A7

A12

A4

A14

V_CC

WP A13

3

4

A14

A13

A8

5

A9

OE

CE

A8

A11

A10

A6

6

A5

7

A9

A3

A15

A16

GND

I/O3

A4

8

A11

OE

A3

9

A2

10

11

12

13

14

15

16

A10

CE

A1

A2

A1

A0

I/O7

I/O6

I/O5

I/O4

I/O5

I/O0

I/O1

A0

I/O4 I/O7

I/O5 I/O6

I/O0

I/O1

I/O2

GND

I/O2

DS20006311A-page 4

AT28C010

Pin Descriptions

2.

Pin Descriptions

The descriptions of the pins are listed in Table 2-1.

Table 2-1.ꢀPin Function Table

Name

32‑Lead CERDIP

32-Lead CLCC

32-Lead

30‑Pin PGA

Function

FLATPACK

NC

A16

A15

A12

A7

1

—

30

29

2

No Connect

Address

2

3

Address

4

Address

5

3

Address

A6

6

4

Address

A5

7

5

Address

A4

8

6

Address

A3

9

7

Address

A2

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

8

Address

A1

9

Address

A0

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

1

Address

I/O0

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

I/O7

CE

Data Input/Output

Ground

Data Input/Output

Chip Enable

Address

A10

OE

Output Enable

Address

A11

A9

Address

A8

Address

A13

A14

NC

Address

—

27

28

No Connect

Write Enable

WE

V_CC

Device Power

Supply

DS20006311A-page 5

AT28C010

Description

3.

Description

The AT28C010 is a high‑performance Electrically Erasable and Programmable Read‑Only Memory (EEPROM).

Its 1‑Mb memory is organized as 131,072 words by 8 bits. Manufactured with Microchip’s advanced nonvolatile

CMOS technology, the device offers access times to 120 ns with power dissipation of just 440 mW. When the device

is deselected, the CMOS standby current is less than 300 µA.

The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components.

The device contains a 128‑byte page register to allow writing of up to 128 bytes simultaneously. During a write cycle,

the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other operations.

Following the initiation of a write cycle, the device will automatically write the latched data using an internal control

timer. The end of a write cycle can be detected by DATA Polling of I/O7. Once the end of a write cycle has been

detected, a new access for a read or write can begin.

The AT28C010 has additional features to ensure high quality and manufacturability. The device utilizes internal error

correction for extended endurance and improved data retention characteristics. An optional software data protection

mechanism is available to guard against inadvertent writes. The device also includes an extra 128 bytes of EEPROM

for device identification or tracking.

3.1

Block Diagram

V_CC

Data Inputs/Outputs

I/O0-I/O7

GND

OE

WE

CE

Data Latch

OE, CE and WE Logic

Input/Output Buffers

Y-Gating

Cell Matrix

Identification

Y Decoder

X Decoder

Address

Inputs

DS20006311A-page 6

AT28C010

Electrical Characteristics

4.

Electrical Characteristics

4.1

Absolute Maximum Ratings

Temperature under bias

-55°C to +125°C

-65°C to +150°C

-0.6V to +6.25V

-0.6V to V_CC+ 0.6V

-0.6V to +13.5V

Storage temperature

All input voltages (including NC pins) with respect to ground

All output voltages with respect to ground

Voltage on OE and A9 with respect to ground

Note:ꢀ Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of the device at these or any other conditions above those

indicated in the operation listings of this specification is not implied. Exposure to absolute maximum rating conditions

for extended periods may affect device reliability.

4.2

4.3

DC and AC Operating Range

Table 4-1.ꢀDC and AC Operating Range

AT28C010‑12

AT28C010‑15

AT28C010‑20

AT28C010‑25

Operating Temperature (Case) Military -55°C to +125°C -55°C to +125°C -55°C to +125°C -55°C to +125°C

V_CCPower Supply

5V ± 10%

DC Characteristics

Table 4-2.ꢀDC Characteristics

Parameter

Input Load Current

Symbol

I_LI

Minimum

Maximum

Units

μA

mA

V

Test Conditions

—

10

V_IN= 0V to V_CC+ 1V

V_I/O= 0V to V_CC

Output Leakage Current

V_CCStandby Current CMOS

V_CCStandby Current TTL

V_CCActive Current

I_LO

I_SB1

I_SB2

I_CC

—

300

3

CE = V_CC- 0.3V to V_CC+ 1V

CE = 2.0V to V_CC+ 1V

f = 5 MHz; I_OUT= 0 mA

—

80

Input Low Voltage

V_IL

—

0.8

—

Input High Voltage

V_IH

2.0

—

V

Output Low Voltage

V_OL

V_OH1

V_OH2

0.45

—

V

I_OL= 2.1 mA

Output High Voltage

Output High Voltage CMOS

2.4

4.2

V

I_OH= -400 μA

—

V

I_OH= -100 μA; V_CC= 4.5V

DS20006311A-page 7

AT28C010

Electrical Characteristics

4.4

Pin Capacitance

Table 4-3.ꢀPin Capacitance^(1,2)

Symbol

C_IN

Typical

Maximum

Units

pF

Conditions

V_IN= 0V

4

8

10

12

C_OUT

pF

V_OUT= 0V

Note:ꢀ

1. This parameter is characterized but is not 100% tested in production.

2. f = 1 MHz, T_A= 25°C

DS20006311A-page 8

AT28C010

Device Operation

5.

Device Operation

READ: The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at

the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high-

impedance state when either CE or OE is high. This dual-line control gives designers flexibility in preventing bus

contention in their system.

BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write

cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first

rising edge of CE or WE. Once a byte write is started, it will automatically time itself to completion. Once a

programming operation is initiated and for the duration of t_WC, a read operation will effectively be a polling operation.

PAGE WRITE: The page write operation of the AT28C010 allows 1 to 128 bytes of data to be written into the device

during a single internal programming period. A page write operation is initiated in the same manner as a byte write;

the first byte written can then be followed by 1 to 127 additional bytes. Each successive byte must be written within

150 µs (t_BLC) of the previous byte. If the t_BLClimit is exceeded, the AT28C010 will cease accepting data and

commence the internal programming operation. All bytes during a page write operation must reside on the same

page as defined by the state of the A7‑A16 inputs. For each WE high‑to‑low transition during the page write

operation, A7‑A16 must be the same. The A0 to A6 inputs are used to specify which bytes within the page are to be

written. The bytes may be loaded in any order and may be altered within the same load period. Only bytes which are

specified for writing will be written; unnecessary cycling of other bytes within the page does not occur.

DATA POLLING: The AT28C010 features DATA Polling to indicate the end of a write cycle. During a byte or page

write cycle, an attempted read of the last byte written will result in the complement of the written data to be presented

on I/O7. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may

begin. DATA Polling may begin at anytime during the write cycle.

TOGGLE BIT: In addition to DATA Polling, the AT28C010 provides another method for determining the end of a write

cycle. During the write operation, successive attempts to read data from the device will result in I/O6 toggling

between one and zero. Once the write has completed, I/O6 will stop toggling and valid data will be read. Reading the

toggle bit may begin at any time during the write cycle.

DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transitions of the host system

power supply. Microchip incorporated both hardware and software features that will protect the memory against

inadvertent writes.

HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the AT28C010 in the following

ways:

•

V_CCsense – if V_CCis below 3.8V (typical), the write function is inhibited

V_CCpower‑on delay – once V_CChas reached 3.8V, the device will automatically time out 5 ms (typical) before

allowing a write

•

write inhibit – holding any one of OE low, CE high or WE high inhibits write cycles

noise filter – pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a write cycle

SOFTWARE DATA PROTECTION: A software-controlled data protection feature has been implemented on the

AT28C010. When enabled, the software data protection (SDP) will prevent inadvertent writes. The SDP feature may

be enabled or disabled by the user; the AT28C010 is shipped with SDP disabled.

SDP is enabled by the host system issuing a series of three write commands; three specific bytes of data are written

to three specific addresses (refer to Software Data Protection Algorithm). After writing the 3‑byte command sequence

and after t_WC, the entire AT28C010 will be protected against inadvertent write operations. It should be noted that,

once protected, the host may still perform a byte or page write to the AT28C010. This is done by preceding the data

to be written by the same 3‑byte command sequence used to enable SDP.

Once set, SDP will remain active unless the disable command sequence is issued. Power transitions do not disable

SDP and SDP will protect the AT28C010 during power‑up and power‑down conditions. All command sequences must

conform to the page write timing specifications. The data in the enable and disable command sequences is not

written to the device and the memory addresses used in the sequence may be written with data in either a byte or

page write operation.

DS20006311A-page 9

AT28C010

Device Operation

After setting SDP, any attempt to write to the device without the 3‑byte command sequence will start the internal write

timers. No data will be written to the device; however, for the duration of t_WC, read operations will effectively be polling

operations.

DEVICE IDENTIFICATION: An extra 128 bytes of EEPROM memory are available to the user for device

identification. By raising A9 to 12V ± 0.5V and using address locations 1FF80H to 1FFFFH, the bytes may be written

to or read from in the same manner as the regular memory array.

OPTIONAL CHIP ERASE MODE: The entire device can be erased using a 6‑byte software code. See Software Chip

Erase application note for details.

5.1

Operating Modes

Table 5-1.ꢀOperating Modes

Mode

CE

V_IL

V_IH

X

OE

V_IL

V_IH

X⁽²⁾

X

WE

V_IH

V_IL

X

I/O

D_OUT

D_IN

Read

Write⁽¹⁾

Standby/Write Inhibit

Write Inhibit

High-Z

V_IH

X

Write Inhibit

X

V_IL

V_IH

Output Disable

X

High-Z

Note:ꢀ

1. Refer to AC Programming Waveforms.

2. X can be V_ILor V_IH.

5.2

AC Read Characteristics

Table 5-2.ꢀAC Read Characteristics

Parameter

Symbol

AT28C010‑12

AT28C010‑15

AT28C010‑20

AT28C010‑25

Units

Min.

Max.

Min.

Max.

Min.

Max.

Min.

Max.

Address to

Output Delay

t_ACC

—

120

—

150

—

200

—

250

ns

(1)

CE to Output

Delay

t_CE

—

0

120

50

—

0

150

55

—

0

200

55

—

0

250

55

(2)

OE to Output

Delay

t_OE

(3,4)

CE or OE to

Output Float

t_DF

0

50

0

55

0

55

0

55

Output Hold

from OE, CE

or Address,

whichever

t_OH

0

occurred first

(5)

CE Pulse

High Time

t_CEPH

50

—

50

—

50

—

50

—

ns

DS20006311A-page 10

AT28C010

Device Operation

Note:ꢀ

1. CE may be delayed up to t_ACC‑t_CEafter the address transition without impact on t_ACC

2. OE may be delayed up to t_CE‑t_OEafter the falling edge of CE without impact on t_CEor by t_ACC‑t_OEafter an

address change without impact in t_ACC

.

3. t_DFis specified from OE or CE, whichever occurs first (C_L= 5 pF).

4. This parameter is characterized and is not 100% tested.

5. If CE is de-asserted, it must remain de-asserted for at least 50 ns during read operations, otherwise incorrect

data may be read.

5.3

AC Read Waveforms

t_ACC

t_CE

t_OE

t_CE

t_OE

t_DF

t_OH

t_ACC

High-Z

5.4

Input Test Waveforms and Measurement Level

3.0V

AC

MEASUREMENT

LEVELS

DRIVING

LEVELS

1.5V

0.0V

5.5

Output Test Load

5.0V

1.8K

1.3K

OUTPUT

100 pF

DS20006311A-page 11

AT28C010

Device Operation

5.6

AC Write Characteristics

Table 5-3.ꢀAC Write Characteristics

Parameter

Write Cycle Time

Symbol

t_WC

t_AS

Minimum

Maximum

Units

ms

ns

—

0

10

—

Address Set-Up Time

Address Hold Time

Data Set-Up Time

Data Hold Time

t_AH

50

0

—

ns

t_DS

—

ns

t_DH

—

ns

Write Pulse Width

Byte Load Cycle Time

Write Pulse Width High

t_WP

t_BLC

t_WPH

100

—

50

—

ns

150

—

µs

ns

5.7

AC Write Waveforms

5.7.1

WE Controlled

t_OES

OE

t_OEH

ADDRESS

CE

t_AS

t_AH

t_CH

t_CS

WE

t_WPH

t_WP

t_DS

t_DH

DATA IN

DS20006311A-page 12

AT28C010

Device Operation

5.7.2

CE Controlled

t_OES

OE

t_OEH

ADDRESS

WE

t_AS

t_AH

t_CH

t_CS

CE

t_WPH

t_WP

t_DH

t_DS

DATA IN

5.8

Page Mode Characteristics

Table 5-4.ꢀPage Mode Characteristics

Parameter

Address, OE Set-Up Time

Address Hold Time

Symbol

t_AS, t_OES

t_AH

Minimum

Maximum

Units

ns

0

50

0

—

ns

Chip Select Set-Up Time

Chip Select Hold Time

Write Pulse Width (WE or CE)

Data Set-Up Time

t_CS

ns

t_CH

0

ns

t_WP

100

50

0

ns

t_DS

ns

Data, OE Hold Time

t_DH, t_OEH

ns

DS20006311A-page 13

AT28C010

Device Operation

5.9

Page Mode Write Waveforms^(1,2)

OE

CE

WE

t_WPH

t_BLC

t_WP

t_AS

t_DH

t_AH

A0-A16

DATA

VALID ADD

t_DS

VALID DATA

BYTE 0

BYTE 1

BYTE 2

BYTE 3

BYTE 126

BYTE 127

t_WC

Note:ꢀ

1. A7 through A16 must specify the page address during each high-to-low transition of WE (or CE).

2. OE must be high only when WE and CE are both low.

5.10

Chip Erase Waveforms

V_IH

CE

V_IL

(3)

V_H

OE

(1)

V_IH

t_S

t_H

WE

V_IL

(2)

t_W

Note:ꢀ

1. t_S= 5 msec (minimum)

2. t_W= t_H= 10 msec (minimum)

3. V_H= 12.0V ± 0.5V

DS20006311A-page 14

AT28C010

Device Operation

5.11

Software Data Protection Enable Algorithm⁽¹⁾

LOAD DATA AA

TO

ADDRESS 5555

LOAD DATA 55

TO

ADDRESS 2AAA

LOAD DATA A0

TO

ADDRESS 5555

WRITES ENABLED⁽²⁾

LOAD DATA XX

TO

ANY ADDRESS⁽³⁾

LOAD LAST BYTE

TO

LAST ADDRESS

ENTER DATA

PROTECT STATE

Note:ꢀ

1. Data format: I/O7-I/O0 (Hex); Address format: A16-A0 (Hex).

2. Write-Protect state will be activated at end of write even if no other data is loaded.

3. 1 to 128 bytes of data are loaded.

DS20006311A-page 15

AT28C010

Device Operation

5.12

Software Data Protection Disable Algorithm⁽¹⁾

LOAD DATA AA

TO

ADDRESS 5555

LOAD DATA 55

TO

ADDRESS 2AAA

LOAD DATA 80

TO

ADDRESS 5555

LOAD DATA AA

TO

ADDRESS 5555

LOAD DATA 55

TO

ADDRESS 2AAA

LOAD DATA 20

TO

ADDRESS 5555

EXIT DATA

PROTECT STATE⁽²⁾

LOAD DATA XX

TO

ANY ADDRESS⁽³⁾

LOAD LAST BYTE

TO

LAST ADDRESS

Note:ꢀ

1. Data format: I/O7-I/O0 (Hex); Address format: A16-A0 (Hex).

2. Write-Protect state will be deactivated at end of write period even if no other data is loaded.

3. 1 to 128 bytes of data are loaded.

DS20006311A-page 16

AT28C010

Device Operation

5.13

Software Protected Program Cycle Waveform^(1,2,3)

OE

CE

t_WPH

t_BLC

t_WP

WE

t_AS

t_AH

BYTE ADDRESS

A0-A6

A7-A16

DATA

PAGE ADDRESS

t_DS

t_DH

BYTE 0

BYTE 127

BYTE 126

t_WC

Note:ꢀ

1. A0-A16 must conform to the addressing sequence for the first 3 bytes as shown above.

2. After the command sequence has been issued and a page write operation follows, the page address inputs

(A7‑A16) must be the same for each high‑to‑low transition of WE (or CE).

3. OE must be high only when WE and CE are both low.

5.14

Data Polling Characteristics⁽¹⁾

Table 5-5.ꢀData Polling Characteristics

Parameter

Data Hold Time

Symbol

t_DH

Minimum

Typical

—

Maximum

Units

ns

10

—

0

—

OE Hold Time

t_OEH

t_OE

—

ns

OE to Output Delay⁽²⁾

Write Recovery Time

—

ns

t_WR

—

ns

Note:ꢀ

1. These parameters are characterized and not 100% tested.

2. See AC Read Characteristics.

DS20006311A-page 17

AT28C010

Device Operation

5.15

Data Polling Waveforms

WE

CE

t_OEH

OE

t_DH

t_WR

t_OE

High-Z

I/O7

A_N

A0-A16

5.16

Toggle Bit Characteristics⁽¹⁾

Table 5-6.ꢀToggle Bit Characteristics

Parameter

Data Hold Time

Symbol

t_DH

Minimum

Typical

—

Maximum

Units

ns

10

—

OE Hold Time

t_OEH

t_OE

t_OEHP

t_WR

—

ns

OE to Output Delay⁽²⁾

OE High Pulse⁽²⁾

Write Recovery Time

—

ns

150

0

—

ns

—

ns

Note:ꢀ

1. These parameters are characterized and not 100% tested.

2. See AC Read Characteristics.

5.17

Toggle Bit Waveforms

WE

CE

t_OEH

OE

t_DH

t_OE

I/O6⁽²⁾

High-Z

t_WR

DS20006311A-page 18

AT28C010

Device Operation

Note:ꢀ

1. Toggling either OE or CE or both OE and CE will operate toggle bit.

2. Beginning and ending state of I/O6 will vary.

3. Any address location may be used but the address should not vary.

DS20006311A-page 19

AT28C010

Packaging Information

6.

Packaging Information

6.1

Package Marking Information

AT28C010: Package Marking Information (SMD devices)

32-Pin CERDIP

32-Pad LCC

Topside

Backside

Topside

Backside

Δ

ATMEL

YWWNNN-19506V

1&&&&&&-$

YYWW

ATMEL

YWWNNNV

Δ

5962-38267

##MXA C

AT28C010

%%DM/883

YQyywwl

5962-38267

19506

##MUA YQyywwl

AT28C010

%%EM/883 C

1&&&&&&-$

YYWW

32-Pin FLATPACK

32-Pin PGA

Topside

Backside

Topside

Edges

Δ

1&&&&&&-$ YYWW

ATMEL

YWWNNN-19506V

1&&&&&&-$

YYWW

ATMEL

Δ

5962-38267

##MZA C

AT28C010

%%FM/883

YQyywwl

5962-38267

##MTA YQyywwl

AT28C010

%%UM/883

C

YQNNNN-19506V

## = Device Number

01: 250 ns

03: 200 ns

05: 150 ns

07: 120 ns

%% = Access Time

$ = Assembly Location

F: Philippines

N: Thailand

25: 250 ns

20: 200 ns

15: 150 ns

12: 120 ns

Country of Assembly

Lot Trace Code

Seal Year and Work Week

&&&&&&: Country of Assembly

YWWNNN: Lot Trace Code

YYWW: Seal Year and Work Week

Year, Quarter, Seal Year, Seal Week and Group D Coverage (Military Date Code)

YQyywwl: Year, Quarter, Seal Year, Seal Week and Group D Coverage (Military Date Code)

DS20006311A-page 20

AT28C010

Packaging Information

AT28C010E: Package Marking Information (Non-SMD devices)

32-Pin CERDIP

32-Pad LCC

Topside

Backside

Topside

Backside

Δ

ATMEL

YWWNNN-19506V

1&&&&&&-$

YYWW

ATMEL

YWWNNNV

Δ

AT28C010E

%%DM/883 C

0HSW3

AT28C010E

19506

%%EM/883 C

OHSW3

1&&&&&&-$

YYWW

YQyywwl

32-Pin FLATPACK

32-Pin PGA

Topside

Backside

Topside

Edges

Δ

YWWNNN-19506V

ATMEL

YWWNNN-19506V

1&&&&&&-$

YYWW

ATMEL

Δ

AT28C010E

%%FM/883 C

0HSW3

AT28C010E

19506

%%UM/883 C

0HSW3

1&&&&&&-$

YYWW

YQyywwl

%% = Access Time

CAGE Code

0HSW3

$ = Assembly Location

F: Philippines

N: Thailand

25: 250 ns

20: 200 ns

15: 150 ns

12: 120 ns

Country of Assembly

Lot Trace Code

YWWNNN: Lot Trace Code

Seal Year and Work Week

&&&&&&: Country of Assembly

YYWW: Seal Year and Work Week

Year, Quarter, Seal Year, Seal Week and Group D Coverage (Military Date Code)

YQyywwl: Year, Quarter, Seal Year, Seal Week and Group D Coverage (Military Date Code)

DS20006311A-page 21

AT28C010

Packaging Information

Dimensions in Millimeters and (Inches).

Controlling dimension: Inches.

MIL-STD 1835 D-16 Config A

42.70(1.68)

41.70(1.64)

1

15.50(0.610)

13.00(0.510)

2.49(0.098)MAX

0.127(0.005)MIN

38.10(1.500) REF

5.72(0.225)

MAX

SEATING

PLANE

1.52(0.060)

0.38(0.015)

0.58(0.023)

0.36(0.014)

5.08(0.200)

3.18(0.125)

1.65(0.065)

1.14(0.045)

2.54(0.100)BSC

15.70(0.620)

15.00(0.590)

0º~ 15º REF

0.381(0.015)

0.203(0.008)

17.80(0.700) MAX

10/23/03

TITLE

DRAWING NO. REV.

32D6, 32-lead, 0.600" Wide, Non-windowed,

Ceramic Dual Inline Package (Cerdip)

32D6

B

Note:ꢀ

For the most current package drawings, please see the Microchip Packaging Specification located at http://

www.microchip.com/packaging.

DS20006311A-page 22

AT28C010

Packaging Information

Dimensions in Millimeters and (Inches).

Controlling dimension: Inches.

MIL-STD 1835 C-12

11.63(0.458)

11.23(0.442)

2.29(0.090)

1.91(0.075)

14.22(0.560)

13.72(0.540)

1.91(0.075)

1.40(0.055)

PIN 1

1.40(0.055)

1.14(0.045)

INDEX CORNER

2.41(0.095)

1.91(0.075)

0.635(0.025)

X 45°

0.381(0.015)

0.305(0.012)

0.178(0.007)

RADIUS

10.16(0.400) BSC

0.737(0.029)

0.533(0.021)

1.27(0.050) TYP

1.02(0.040) X 45°

2.16(0.085)

1.65(0.065)

7.62(0.300) BSC

10/21/03

TITLE

DRAWING NO. REV.

32L1, 32-pad, Non-windowed, Combo Lid, Leadless Chip

Carrier (LCC)

32L1

B

Note:ꢀ

For the most current package drawings, please see the Microchip Packaging Specification located at http://

www.microchip.com/packaging.

DS20006311A-page 23

AT28C010

Packaging Information

Dimensions in Millimeters and (Inches).

Controlling dimension: Inches.

JEDEC Outline MO-115 AA

PIN #1 ID

9.40(0.370)

6.86(0.270)

0.51(0.020)

0.38(0.015)

21.08(0.830)

20.60(0.811)

1.27(0.050) BSC

1.14(0.045) MAX

12.40(0.488)

11.99(0.472)

3.05(0.120)

2.49(0.098)

0.18(0.007)

0.10(0.004)

10.36(0.408)

9.02(0.355)

1.14(0.045)

0.66(0.026)

1.83(0.072)

0.76(0.030)

10/21/03

TITLE

DRAWING NO. REV.

32F, 32-lead, Non-windowed, Ceramic Bottom-brazed

Flat Package (FlatPack)

32F

B

Note:ꢀ

For the most current package drawings, please see the Microchip Packaging Specification located at http://

www.microchip.com/packaging.

DS20006311A-page 24

AT28C010

Packaging Information

Dimensions in Millimeters and (Inches).

Controlling dimension: Inches.

7.26(0.286)

6.50(0.256)

13.74(0.541)

13.36(0.526)

2.57(0.101)

2.06(0.081)

1.40(0.055)

1.14(0.045)

0.58(0.023)

0.43(0.017)

16.18(0.637)

15.82(0.623)

3.12(0.123)

2.62(0.103)

1.83(0.072)

1.57(0.062)

14.17(0.558)

13.77(0.542)

2.54(0.100) TYP

16.71(0.658)

16.31(0.642)

12.70(0.500) TYP

2.54(0.100) TYP

10.41(0.410)

9.91(0.390)

10/21/03

TITLE

DRAWING NO. REV.

30U, 30-pin, Ceramic Pin Grid Array (PGA)

30U

B

Note:ꢀ

For the most current package drawings, please see the Microchip Packaging Specification located at http://

www.microchip.com/packaging.

DS20006311A-page 25

AT28C010

Revision History

7.

Revision History

Revision A (March 2020)

Updated to the Microchip template. Microchip DS20006311 replaces Atmel document 0010. Added updated Part

Markings to include new trace code format.

Atmel Document 0010 Revision I (June 2015)

Added Revision History section. Updated AC Characteristics and ordering information.

DS20006311A-page 26

AT28C010

The Microchip Website

Microchip provides online support via our website at http://www.microchip.com/. This website is used to make files

and information easily available to customers. Some of the content available includes:

•

Product Support – Data sheets and errata, application notes and sample programs, design resources, user’s

guides and hardware support documents, latest software releases and archived software

General Technical Support – Frequently Asked Questions (FAQs), technical support requests, online

discussion groups, Microchip design partner program member listing

Business of Microchip – Product selector and ordering guides, latest Microchip press releases, listing of

seminars and events, listings of Microchip sales offices, distributors and factory representatives

Product Change Notification Service

Microchip’s product change notification service helps keep customers current on Microchip products. Subscribers will

receive email notification whenever there are changes, updates, revisions or errata related to a specified product

family or development tool of interest.

To register, go to http://www.microchip.com/pcn and follow the registration instructions.

Customer Support

Users of Microchip products can receive assistance through several channels:

•

Distributor or Representative

Local Sales Office

Embedded Solutions Engineer (ESE)

Technical Support

Customers should contact their distributor, representative or ESE for support. Local sales offices are also available to

help customers. A listing of sales offices and locations is included in this document.

Technical support is available through the website at: http://www.microchip.com/support

DS20006311A-page 27

AT28C010

Product Identification System

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

AT28 C 010 (E)- 20 E M /883

/883 = MIL-STD-883 Class B Product

AT28 = Parallel EEPROM

M = -55°C to +125°C Military Temperature Grade, Sn63/Pb37 Terminal Finish

C = 4.5V to 5.5V

010 = 1 Mbit Size

Blank = 10K Standard Write Endurance

D = 32-Lead, 600 mil Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)

E = 32-Pad, Non-Windowed, Combo Lid, Leadless Chip Carrier (LCC)

F = 32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)

U = 30-Pin, Ceramic Pin Grid Array (PGA)

E = 100K Extended Write Endurance Option

12 = 120 ns Speed

15 = 150 ns Speed

20 = 200 ns Speed

25 = 250 ns Speed

WM = Die Sales (contact Microchip)

DWFM = Wfer Sales (contact Microhip)

Examples

Table 11-1.ꢀAT28C010 Ordering Information

Ordering Code

Standard Military

Drawing Number

(SMD#)

Package

Number

t_ACC(ns)

Operating Range

AT28C010-12DM/883

AT28C010-12EM/883

AT28C010-12FM/883

AT28C010-12UM/883

AT28C010-15DM/883

AT28C010-15EM/883

AT28C010-15FM/883

AT28C010-15UM/883

AT28C010-20DM/883

AT28C010-20EM/883

AT28C010-20FM/883

AT28C010-20UM/883

AT28C010-12DM/883

AT28C010-12FM/883

AT28C010-WM

5962-38267 07 MXA

5962-38267 07 MUA

5962-38267 07 MZA

5962-38267 07 MTA

5962-38267 05 MXA

5962-38267 05 MUA

5962-38267 05 MZA

5962-38267 05 MTA

5962-38267 03 MXA

5962-38267 03 MUA

5962-38267 03 MZA

5962-38267 03 MTA

5962-38267 01 MXA

5962-38267 01 MZA

None

32D6

32L1

120

32F

30U

32D6

32L1

150

32F

30U

Military/883C Class B, Fully

Compliant (-55°C to 125°C)

32D6

32L1

200

250

32F

30U

32D6

32F

Die Sales

Wafer Sales

Note 1

AT28C010-DWFM

None

Note:ꢀ

1. Contact Microchip Sales for Die and Wafer sales

DS20006311A-page 28

AT28C010

Table 11-2.ꢀAT28C010E Ordering Information

Ordering Code

Standard

Military Drawing

Number (SMD#)

Package

Number

t_ACC(ns)

Operating Range

AT28C010E-12DM/883

AT28C010E-12EM/883

AT28C010E-12FM/883

AT28C010E-12UM/883

AT28C010E-15DM/883

None

32D6

32L1

32F

Military/883C Class B,

Fully Compliant (-55°C to

125°C)

120

150

30U

32D6

Package Types

32D6

32F

32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)

32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)

32-Pad, Non-Windowed, Combo Lid, Leadless Chip Carrier (LCC)

30-Pin, Ceramic Pin Grid Array (PGA)

32L1

30U

WM

Diced Die Military

DWFM

Die in Wafer Form Military

Options

Blank

E

Standard Device: Endurance = 10K Write Cycles; Write Time 10 ms

High Endurance Option: Endurance = 100K Write Cycles

Microchip Devices Code Protection Feature

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

Microchip believes that its family of products is one of the most secure families of its kind on the market today,

when used in the intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these

methods, to our knowledge, require using the Microchip products in a manner outside the operating

specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of

intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code

protection does not mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection

features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital

Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you

may have a right to sue for relief under that Act.

Legal Notice

Information contained in this publication regarding device applications and the like is provided only for your

convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with

your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER

EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION,

DS20006311A-page 29

AT28C010

INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend,

indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such

use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless

otherwise stated.

Trademarks

The Microchip name and logo, the Microchip logo, Adaptec, AnyRate, AVR, AVR logo, AVR Freaks, BesTime,

BitCloud, chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, HELDO, IGLOO, JukeBlox,

KeeLoq, Kleer, LANCheck, LinkMD, maXStylus, maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo, MOST,

MOST logo, MPLAB, OptoLyzer, PackeTime, PIC, picoPower, PICSTART, PIC32 logo, PolarFire, Prochip Designer,

QTouch, SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash, Symmetricom, SyncServer, Tachyon,

TempTrackr, TimeSource, tinyAVR, UNI/O, Vectron, and XMEGA are registered trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

APT, ClockWorks, The Embedded Control Solutions Company, EtherSynch, FlashTec, Hyper Speed Control,

HyperLight Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3, Precision Edge, ProASIC, ProASIC Plus,

ProASIC Plus logo, Quiet-Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub, TimePictra, TimeProvider,

Vite, WinPath, and ZL are registered trademarks of Microchip Technology Incorporated in the U.S.A.

Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BlueSky, BodyCom,

CodeGuard, CryptoAuthentication, CryptoAutomotive, CryptoCompanion, CryptoController, dsPICDEM,

dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP,

INICnet, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, memBrain, Mindi, MiWi, MPASM, MPF,

MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM,

PICDEM.net, PICkit, PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple Blocker, SAM-ICE, Serial Quad

I/O, SMART-I.S., SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense,

ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A.

and other countries.

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.

The Adaptec logo, Frequency on Demand, Silicon Storage Technology, and Symmcom are registered trademarks of

Microchip Technology Inc. in other countries.

GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip

Technology Inc., in other countries.

All other trademarks mentioned herein are property of their respective companies.

©

ISBN: 978-1-5224-5748-0

AMBA, Arm, Arm7, Arm7TDMI, Arm9, Arm11, Artisan, big.LITTLE, Cordio, CoreLink, CoreSight, Cortex, DesignStart,

DynamIQ, Jazelle, Keil, Mali, Mbed, Mbed Enabled, NEON, POP, RealView, SecurCore, Socrates, Thumb,

TrustZone, ULINK, ULINK2, ULINK-ME, ULINK-PLUS, ULINKpro, µVision, Versatile are trademarks or registered

trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

Quality Management System

For information regarding Microchip’s Quality Management Systems, please visit http://www.microchip.com/quality.

DS20006311A-page 30

Worldwide Sales and Service

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://www.microchip.com/support

Web Address:

Australia - Sydney

Tel: 61-2-9868-6733

China - Beijing

India - Bangalore

Tel: 91-80-3090-4444

India - New Delhi

Tel: 91-11-4160-8631

India - Pune

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

Denmark - Copenhagen

Tel: 45-4485-5910

Tel: 86-10-8569-7000

China - Chengdu

Tel: 86-28-8665-5511

China - Chongqing

Tel: 86-23-8980-9588

China - Dongguan

Tel: 86-769-8702-9880

China - Guangzhou

Tel: 86-20-8755-8029

China - Hangzhou

Tel: 86-571-8792-8115

China - Hong Kong SAR

Tel: 852-2943-5100

China - Nanjing

Tel: 91-20-4121-0141

Japan - Osaka

Fax: 45-4485-2829

Finland - Espoo

Tel: 81-6-6152-7160

Japan - Tokyo

Tel: 358-9-4520-820

France - Paris

http://www.microchip.com

Atlanta

Tel: 81-3-6880- 3770

Korea - Daegu

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

Germany - Garching

Tel: 49-8931-9700

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

Austin, TX

Tel: 82-53-744-4301

Korea - Seoul

Tel: 82-2-554-7200

Malaysia - Kuala Lumpur

Tel: 60-3-7651-7906

Malaysia - Penang

Tel: 60-4-227-8870

Philippines - Manila

Tel: 63-2-634-9065

Singapore

Germany - Haan

Tel: 512-257-3370

Boston

Tel: 49-2129-3766400

Germany - Heilbronn

Tel: 49-7131-72400

Germany - Karlsruhe

Tel: 49-721-625370

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Germany - Rosenheim

Tel: 49-8031-354-560

Israel - Ra’anana

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Chicago

Tel: 86-25-8473-2460

China - Qingdao

Tel: 86-532-8502-7355

China - Shanghai

Tel: 86-21-3326-8000

China - Shenyang

Tel: 86-24-2334-2829

China - Shenzhen

Tel: 86-755-8864-2200

China - Suzhou

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Dallas

Tel: 65-6334-8870

Taiwan - Hsin Chu

Tel: 886-3-577-8366

Taiwan - Kaohsiung

Tel: 886-7-213-7830

Taiwan - Taipei

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

Detroit

Tel: 972-9-744-7705

Italy - Milan

Tel: 86-186-6233-1526

China - Wuhan

Tel: 886-2-2508-8600

Thailand - Bangkok

Tel: 66-2-694-1351

Vietnam - Ho Chi Minh

Tel: 84-28-5448-2100

Tel: 39-0331-742611

Fax: 39-0331-466781

Italy - Padova

Novi, MI

Tel: 248-848-4000

Houston, TX

Tel: 86-27-5980-5300

China - Xian

Tel: 39-049-7625286

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Norway - Trondheim

Tel: 47-72884388

Tel: 281-894-5983

Indianapolis

Tel: 86-29-8833-7252

China - Xiamen

Noblesville, IN

Tel: 86-592-2388138

China - Zhuhai

Tel: 317-773-8323

Fax: 317-773-5453

Tel: 317-536-2380

Los Angeles

Tel: 86-756-3210040

Poland - Warsaw

Tel: 48-22-3325737

Romania - Bucharest

Tel: 40-21-407-87-50

Spain - Madrid

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

Tel: 951-273-7800

Raleigh, NC

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

Sweden - Gothenberg

Tel: 46-31-704-60-40

Sweden - Stockholm

Tel: 46-8-5090-4654

UK - Wokingham

Tel: 919-844-7510

New York, NY

Tel: 631-435-6000

San Jose, CA

Tel: 408-735-9110

Tel: 408-436-4270

Canada - Toronto

Tel: 905-695-1980

Fax: 905-695-2078

Tel: 44-118-921-5800

Fax: 44-118-921-5820

DS20006311A-page 31


型号：	AT28C010E-12DM
厂家：	MICROCHIP
描述：	Military Grade 1-Mbit (131,072 x 8) Paged Parallel EEPROM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件：	总31页 (文件大小：524K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AT28C010E-12DM [MICROCHIP]

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