AT93C46DN-SH-T-989 [MICROCHIP]
EEPROM, 64X16, Serial, CMOS, PDSO8;型号: | AT93C46DN-SH-T-989 |
厂家: | MICROCHIP |
描述: | EEPROM, 64X16, Serial, CMOS, PDSO8 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟 光电二极管 内存集成电路 |
文件: | 总17页 (文件大小:708K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AT93C46D
3-wire Automotive Temperature Serial EEPROMs
1K (128 x 8 or 64 x 16)
DATASHEET
Features
Medium-voltage and Standard-voltage Operation
2.5 (VCC = 2.5V to 5.5V)
User-selectable Internal Organization
1K: 128 x 8 or 64 x 16
̶
̶
3-wire Serial Interface
2MHz Clock Rate (5V)
Self-timed Write Cycle (10ms max)
High Reliability
̶
̶
Endurance: 1,000,000 Write Cycles
Data Retention: 100 Years
8-lead JEDEC SOIC and TSSOP Packages
Description
The AT93C46D provides 1,024 bits of serial electrically erasable programmable
read only memory (EEPROM) organized as 64 words of 16 bits each, when the
ORG pin is connected to VCC and 128 words of 8 bits each when it is tied to
ground. The device is optimized for use in many automotive applications where
low power and low voltage operations are essential. The AT93C46D is available
in space-saving 8-lead TSSOP and 8-lead JEDEC SOIC packages. The
AT93C46D is enabled through the Chip Select pin (CS), and accessed via a
3-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift
Clock (SK). Upon receiving a READ instruction at DI, the address is decoded and
the data is clocked out serially on the data output pin DO. The WRITE cycle is
completely self-timed and no separate erase cycle is required before write. The
Write cycle is only enabled when it is in the Erase/Write Enable state. When CS is
brought “high” following the initiation of a write cycle, the DO pin outputs the
Ready/Busy status.
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
1.
Pin Configurations and Pinouts
Table 1-1.
Pin Configurations
8-lead SOIC
8-lead TSSOP
Pin Name
CS
Function
1
2
3
4
8
7
6
5
CS
SK
DI
VCC
DC
ORG
GND
CS
SK
DI
VCC
DC
ORG
GND
1
2
3
4
8
7
6
5
Chip Select
DI
Serial Data Input
Serial Data Output
Ground
DO
DO
DO
(Top View)
(Top View)
GND
ORG
SK
Note: Drawings are not to scale.
Internal Organization
Serial Data Clock
Power Supply
VCC
2.
Absolute Maximum Ratings*
*Notice: Stresses beyond those listed under “Absolute
Operating Temperature 55C to +125C
Storage Temperature65C to +150C
Maximum Ratings” may cause permanent damage
to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability
Voltage on Any Pin
with Respect to Ground1.0V to +7.0V
Maximum Operating Voltage . . . . . . . . . . . . . . . 6.25V
DC Output Current . . . . . . . . . . . . . . . . . . . . . . .5.0mA
2
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
3.
Block Diagram
Figure 3-1.
Block Diagram
VCC
GND
Memory Array
Address
Decoder
128 x 8
or
64 x 16
ORG
Data
Register
Output
Buffer
DI
Mode Decode
Logic
CS
Clock
Generator
SK
DO
Note:
When the ORG pin is connected to VCC, the x16 organization is selected. When it is connected to ground,
the x8 organization is selected.
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
3
4.
Memory Organization
4.1
Pin Capacitance
Table 4-1.
Applicable over recommended operating range from TA = 25C, f = 1.0MHz, VCC = +5.0V (unless otherwise noted).
Pin Capacitance(1)
Symbol
COUT
CIN
Test Conditions
Max
5
Units
pF
Conditions
VOUT = 0V
VIN = 0V
Output Capacitance (DO)
Input Capacitance (CS, SK, DI)
5
pF
Note:
1. This parameter is characterized and is not 100% tested.
4.2
DC Characteristics
Table 4-2.
DC Characteristics
Applicable over recommended operating range from: TA = -40° C to +125° C, VCC = +2.5V to +5.5V (unless otherwise
noted).
Symbol
VCC1
Parameter
Test Condition
Min
2.5
4.5
Typ
Max
5.5
Unit
V
Supply Voltage
Supply Voltage
VCC2
5.5
V
Read at 1.0MHz
WRITE at 1.0MHz
CS = 0V
0.5
0.5
6.0
10.0
0.1
0.1
2.0
mA
mA
μA
μA
μA
μA
ICC
Supply Current
VCC = 5.0V
2.0
ISB1
ISB2
IIL
Standby Current
Standby Current
Input Leakage
VCC = 2.5V
10.0
15.0
1.0
VCC = 5.0V
CS = 0V
VIN = 0V to VCC
VIN = 0V to VCC
IOL
Output Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1.0
(1)
VIL1
0.6
0.8
2.5V VCC 5.5V
2.5V VCC 5.5V
(1)
VIH1
2.0
VCC + 1
0.4
V
V
V
VOL1
VOH1
IOL = 2.1mA
IOH = 0.4mA
2.4
Note:
1. VIL min and VIH max are reference only and are not tested.
4
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
4.3
AC Characteristics
Table 4-3.
AC Characteristics
Applicable over recommended operating range from TA = 40°C to + 125°C, VCC = As Specified, CL = 1 TTL Gate and
100pF (unless otherwise noted).
Symbol
Parameter
Test Condition
Min
0
Typ
Max
2
Units
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
fSK
SK Clock Frequency
MHz
0
1
250
250
250
250
250
250
50
tSKH
tSKL
tCS
SK High Time
ns
ns
ns
ns
SK Low Time
Minimum CS Low Time
CS Setup Time
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
tCSS
Relative to SK
50
100
100
0
tDIS
tCSH
tDIH
DI Setup Time
CS Hold Time
DI Hold Time
Relative to SK
Relative to SK
Relative to SK
ns
ns
ns
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
4.5V VCC 5.5V
2.5V VCC 5.5V
2.5V VCC 5.5V
100
100
250
500
250
500
250
250
100
150
10
tPD1
tPD0
tSV
Output Delay to ‘1’
AC Test
AC Test
AC Test
ns
ns
ns
ns
Output Delay to ‘0’
CS to Status Valid
AC Test
CS = VIL
tDF
CS to DO in High-impedance
3
ms
tWP
Write Cycle Time
5.0V, 25°C
Endurance(1)
1,000,000
Write Cycles
Note:
1. This parameter is ensured by characterization only.
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
5
5.
Instruction Set for the AT93C46D
Table 5-1.
Instruction Set for the AT93C46D
Address
Data
Instruction
SB
Opcode
x8
x16
x8
x16
Comments
Reads data stored in memory, at
specified address.
READ
1
10
A6 – A0
A5 – A0
Write enable must precede all
programming modes.
EWEN
ERASE
WRITE
ERAL
1
1
1
1
1
1
00
11
01
00
00
00
11XXXXX
A6 – A0
11XXXX
A5 – A0
Erase memory location An – A0.
Writes memory location An – A0.
A6 – A0
A5 – A0
D7 – D0
D15 – D0
Erases all memory locations.
Valid only at VCC = 4.5V to 5.5V.
10XXXXX
01XXXXX
00XXXXX
10XXXX
01XXXX
00XXXX
Writes all memory locations.
Valid only at VCC = 4.5V to 5.5V.
WRAL
EWDS
D7 – D0
D15 – D0
Disables all programming.
instructions.
Note:
The ‘X’ in the address field represent don’t care values and must be clocked.
6
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
6.
Functional Description
The AT93C46D is accessed via a simple and versatile 3-wire serial communication interface. The device
operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising
edge of CS and consists of a Start bit (Logic 1) followed by the appropriate Opcode and the desired memory
Address location.
READ: The READ instruction contains the address code for the memory location to be read. After the
instruction and address are decoded, data from the selected memory location is available at the Serial Output
(DO) pin. Output data changes are synchronized with the rising edges of Serial Clock (SK).
Note: A dummy bit (Logic 0) precedes the 8- or 16-bit data output string.
Figure 6-1.
Read Timing
tCS
CS
SK
DI
1
1
0
AN
A0
High-impedance
DO
0
DN
D0
ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable
(EWDS) state when the power is first applied. An EWEN instruction must be executed first before any
programming instructions can be carried out.
Note: Once in the EWEN state, programming remains enabled until an EWDS instruction is executed or VCC
power is removed from the part.
Figure 6-2.
EWEN Timing
tCS
CS
SK
DI
...
0
1
1
1
0
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
7
ERASE: The Erase instruction programs all of the bits in the specified memory location to the Logic 1 state. The
self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the
Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250ns (tCS). A Logic 1
at the DO pin indicates that the selected memory location has been erased, and the part is ready for another
instruction.
Figure 6-3.
ERASE Timing
tCS
Standby
CS
SK
DI
Check
Status
A0
1
1
1
AN
...
AN-1 AN-2
tDF
High-impedance
tSV
High-impedance
Busy
DO
Ready
tWP
WRITE: The WRITE instruction contains the 8 or 16 bits of data to be written into the specified memory location.
The self-timed programming cycle, tWP, starts after the last bit of data is received at serial data input pin DI. The
DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of
250ns (tCS). A Logic 0 at DO indicates that programming is still in progress. A Logic 1 indicates that the memory
location at the specified address has been written with the data pattern contained in the instruction and the part
is ready for further instructions. A Ready/Busy status cannot be obtained if the CS is brought high after the end
of the self-timed programming cycle, tWP
.
Figure 6-4.
Write Timing
tCS
CS
SK
...
...
AN
DN
1
0
1
A0
D0
DI
High-impedance
DO
Busy
Ready
tWP
8
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
Erase All (ERAL): The ERAL instruction programs every bit in the memory array to the Logic 1 state and is
primarily used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high
after being kept low for a minimum of 250ns (tCS). The ERAL instruction is valid only at
VCC = 5.0V 10%.
Figure 6-5.
ERAL Timing(1)
tCS
Standby
Check
Status
CS
SK
1
0
0
1
0
DI
tDF
High-impedance
tSV
High-impedance
DO
Busy
Ready
tWP
Note:
1. Valid only at VCC = 4.5V to 5.5V.
WRITE ALL (WRAL): The WRAL instruction programs all memory locations with the data patterns specified in
the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low
for a minimum of 250 ns (tCS). The WRAL instruction is valid only at VCC = 5.0V ±10%.
Figure 6-6.
WRAL Timing(1)
tCS
CS
SK
1
0
0
0
1
...
D
...
D0
N
DI
High-impedance
DO
Busy
Ready
tWP
Note:
1. Valid only at VCC = 4.5V to 5.5V.
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
9
ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the EWDS instruction disables
all the programming modes and should be executed after all programming operations. The operation of the
READ instruction is independent of both the EWEN and EWDS instructions and can be executed at any time.
Figure 6-7.
EWDS Timing
tCS
CS
SK
DI
...
0
0
0
1
0
7.
Timing Diagrams
Figure 7-1.
Synchronous Data Timing
1µs(1)
VIH
CS
VIL
tSKH
tCSS
tSKL
tCSH
VIH
VIL
SK
DI
tDIS
tDIH
VIH
VIL
tDF
tPD0
tPD1
VOH
VOL
DO (Read)
tDF
tSV
VOH
VOL
DO (Program)
Status Valid
Note:
1. This is the minimum SK period.
Table 7-1.
Organization Key for the Timing Diagrams
AT93C46D (1K)
I/O
AN
DN
x 8
A6
x 16
A5
D7
D15
10
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
8.
Ordering Code Detail
A T 9 3 C 4 6 D N - S P 2 5 - T
Atmel Designator
Shipping Carrier Option
B or Blank = Bulk (Tubes)
T
= Tape and Reel
Product Family
93C = 3-wire Automotive
Serial EEPROM
Operating Voltage
25 = 2.5V to 5.5V
Device Density
46 = 1 kilobit
Package Device Grade or
Wafer/Die Thickness
P
= Lead-free / Halogen-free
Automotive Temperature Range
(-40°C to +125°C)
Device Revision
Package Variation
(Package Type Dependant)
N = 0.150” with SOIC
Package Option
S
T
= JEDEC SOIC
= TSSOP
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
11
9.
Part Markings
AT93C46D: Automotive Package Marking Information
8-lead TSSOP
8-lead SOIC
ATMLPYWW
PYWW
###%
### %
AAAAAAAA
Note: Lot Number and location of assembly
and on the bottom side of the package.
Note 1:
designates pin 1
Note 2: Package drawings are not to scale
Catalog Number Truncation
AT93C46D
Truncation Code ###: 46D
Date Codes
Voltages
Y = Year
4: 2014
5: 2015
6: 2016
7: 2017
M = Month
A: January
B: February
...
WW = Work Week of Assembly
% = Minimum Voltage
2: 2.5V min
8: 2018
9: 2019
0: 2020
1: 2021
02: Week 2
04: Week 4
...
L: December
52: Week 52
Country of Assembly
Lot Number
AAA...A = Atmel Wafer Lot Number
Grade/Lead Finish Material
@ = Country of Assembly
P: Automotive/NiPdAu
Trace Code
Atmel Truncation
XX = Trace Code (Atmel Lot Numbers Correspond to Code)
Example: AA, AB.... YZ, ZZ
AT: Atmel
ATM: Atmel
ATML: Atmel
3/13/14
TITLE
DRAWING NO.
REV.
93C46DAM, AT93C46D Automotive Package Marking
Information
Package Mark Contact:
DL-CSO-Assy_eng@atmel.com
93C46DAM
A
12
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
10. Ordering Codes
Atmel Ordering Code
AT93C46DN-SP25-T(1)
AT93C46DN-SP25-B(2)
AT93C46D-TP25-T(1)
AT93C46D-TP25-B(2)
Lead Finish
Package
Voltage
Operation Range
8S1
Automotive Temperature
Lead-free / Halogen-free
2.5V to 5.5V
(-40C to 125C)
8X
Notes: 1. Tape and reel delivery:
SOIC = 4,000 per reel.
TSSOP = 5,000 per reel.
2. Bulk delivery in tubes:
SOIC and TSSOP = 100 per tube.
Package Type
8S1
8X
8-lead, 0.15" wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
8-lead, 4.40mm body, Plastic Thin Shrink Small Outline Package (TSSOP)
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
13
11. Packaging Information
11.1 8S1 — 8-lead JEDEC SOIC
C
1
E
E1
L
N
Ø
TOP VIEW
END VIEW
e
b
COMMON DIMENSIONS
(Unit of Measure = mm)
A
MIN
1.35
0.10
MAX
1.75
0.25
NOM
–
–
NOTE
SYMBOL
A1
A
A1
b
0.31
0.17
4.80
3.81
5.79
–
0.51
0.25
5.05
3.99
6.20
C
D
E1
E
e
–
–
D
–
–
SIDE VIEW
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
1.27 BSC
L
0.40
0°
–
–
1.27
8°
Ø
6/22/11
DRAWING NO. REV.
8S1
TITLE
GPC
8S1, 8-lead (0.150” Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)
SWB
G
Package Drawing Contact:
packagedrawings@atmel.com
14
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
11.2 8X — 8-lead TSSOP
C
1
Pin 1 indicator
this corner
E1
E
L1
N
L
Top View
End View
A
b
A1
COMMON DIMENSIONS
(Unit of Measure = mm)
e
A2
D
SYMBOL
MIN
-
NOM
-
MAX
1.20
0.15
1.05
3.10
NOTE
2, 5
A
Side View
A1
A2
D
0.05
0.80
2.90
-
Notes: 1. This drawing is for general information only.
1.00
Refer to JEDEC Drawing MO-153, Variation AA, for proper
dimensions, tolerances, datums, etc.
3.00
2. Dimension D does not include mold Flash, protrusions or gate
burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15mm (0.006in) per side.
E
6.40 BSC
4.40
E1
b
4.30
0.19
4.50
0.30
3, 5
4
3. Dimension E1 does not include inter-lead Flash or protrusions.
Inter-lead Flash and protrusions shall not exceed 0.25mm
(0.010in) per side.
4. Dimension b does not include Dambar protrusion.
Allowable Dambar protrusion shall be 0.08mm total in excess
of the b dimension at maximum material condition. Dambar
cannot be located on the lower radius of the foot. Minimum
space between protrusion and adjacent lead is 0.07mm.
5. Dimension D and E1 to be determined at Datum Plane H.
0.25
e
0.65 BSC
0.60
L
0.45
0.09
0.75
0.20
L1
C
1.00 REF
-
2/27/14
TITLE
GPC
TNR
DRAWING NO.
REV.
8X, 8-lead 4.4mm Body, Plastic Thin
Shrink Small Outline Package (TSSOP)
8X
E
Package Drawing Contact:
packagedrawings@atmel.com
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
15
12. Revision History
Doc. Rev.
Date
Comments
Update the 8S1 and the 8A2 to 8X packages, template, Atmel logos, and disclaimer page.
No change in functional specification.
8674C
10/2014
8674B
8674A
10/2009
4/2009
Updated Lit number and date and removed preliminary status.
Initial document release.
16
AT93C46D Automotive [DATASHEET]
Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014
X
X X X X
X
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© 2014 Atmel Corporation. / Rev.: Atmel-8674C-SEEPROM-AT93C46D-Automotive-Datasheet_102014.
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相关型号:
AT93C46DN-SP25-T
EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, HALOGEN AND LEAD FREE, PLASTIC, MS-012, SOIC-8
MICROCHIP
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