ATA2525S133C-DDW [MICROCHIP]
Telecom Circuit, 1-Func, DIE-11;
| 型号： | ATA2525S133C-DDW |
| 厂家： | 
MICROCHIP |
| 描述： | Telecom Circuit, 1-Func, DIE-11 |
| 文件： | 总12页 (文件大小：550K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ATA2525
IR Receiver ASSP
DATASHEET
Features
● No external components except PIN diode
● Supply-voltage range: 4.5V to 5.5V
● High sensitivity due to automatic sensitivity adaption (AGC) and automatic strong
signal adaption (ATC)
● High immunity against disturbances from daylight and lamps
● Small size and innovative pad layout
● Available for carrier frequencies between 33kHz to 40kHz; adjusted
by zener diode fusing
● TTL and CMOS compatible
● Suitable minimum burst length ≥ 10 pulses/burst
Applications
● Home entertainment applications
● Home appliances
● Remote control equipment
4854H-AUTO-03/14
1.
Description
The Atmel® IC ATA2525 is a complete IR receiver for data communication that was developed and optimized for use in
carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity as well as high
suppression of noise from daylight and lamps. An innovative and patented pad layout offers unique flexibility for assembly of
IR receiver modules. The Atmel ATA2525 is available with standard carrier frequencies (33, 36, 37, 38, 40kHz) and 3
different noise suppression regulation types (standard, lamp, noise) covering requirements of different high-volume remote
control solutions (please refer to selection guide available for Atmel ATA2525/ATA2526). The Atmel ATA2525 operates in a
supply voltage range of 4.5V to 5.5V.
The function of Atmel ATA2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets
two main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are
transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a
controlled gain amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency f0
which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst
signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be
suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to
adapt to the current application to secure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
OUT
CGA and
Filter
Micro-
controller
Demodulator
Input
Oscillator
AGC/ATC and Digital Control
Carrier Frequency f
0
ATA2525
Modulated IR Signal
min 10 Pulses
GND
2
ATA2525 [DATASHEET]
4854H–AUTO–03/14
2.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
3.
Electrical Characteristics
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
1
Supply
1.1
1.2
2
Supply-voltage range
Supply current
Output
VS
IS
4.5
0.8
5
5.5
1.4
V
C
B
IIN = 0
1.1
mA
Tamb = 25°C;
see Figure 5-7 on page 8
2.1
Internal pull-up resistor
RPU
40
kΩ
A
IL = 2mA;
see Figure 5-7 on page 8
2.2
2.3
2.4
3
Output voltage low
Output voltage high
Output current clamping
Input
VOL
VOH
IOCL
250
VS
mV
V
B
A
B
Tamb = 25°C
VS – 0.25
R2 = 0;
see Figure 5-7 on page 8
8
mA
VIN = 0;
see Figure 5-7 on page 8
3.1
Input DC current
IIN_DCMAX
IIN_DCMAX
–85
µA
µA
C
B
Input DC current;
see Figure 5-1 on page 5
VIN = 0; Vs = 5V,
Tamb = 25°C
3.2
–530
–960
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1µA;
square pp,
burst N = 16,
Minimum detection
threshold current;
see Figure 5-2 on page 5
3.3
IEemin
–600
pA
B
f = f0; tPER = 10ms,
see Figure 5-6 on page 7;
BER = 50(1)
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
ATA2525 [DATASHEET]
3
4854H–AUTO–03/14
3.
Electrical Characteristics (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1µA,
square pp,
Minimum detection
threshold current with AC
current disturbance
IIN_AC100 = 3 µA at 100
Hz
3.4
IEemin
–850
pA
C
burst N = 16,
f = f0; tPER = 10ms,
see Figure 5-6 on page 7;
BER = 50%(1)
Test signal:
see Figure 5-6 on page 7
VS = 5V, Tamb = 25°C,
I
IN_DC = 1µA;
Maximum detection
threshold current
3.5
square pp,
burst N = 16,
IEemax
–400
µA
D
f = f0; tPER = 10ms,
see Figure 5-6 on page 7;
BER = 5%(1)
4
Controlled Amplifier and Filter
Maximum value of variable
gain (CGA)
4.1
VS = 5V, Tamb = 25°C
GVARMAX
GVARMIN
GMAX
f0_FUSE
f0
51
–5
71
f0
dB
dB
dB
%
D
D
D
A
C
B
Minimum value of variable
gain (CGA)
4.2
4.3
4.4
4.5
4.6
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
VS = 5V, Tamb = 25°C
Total internal
amplification(2)
Center frequency fusing
accuracy of bandpass
–3
+3
Overall accuracy center
frequency of bandpass
–6.7
f0
+4.1
%
–3dB; f0 = 38kHz;
see Figure 5-4 on page 6
BPF bandwidth
B
3.5
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2525 [DATASHEET]
4854H–AUTO–03/14
4.
5.
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
Typical Electrical Curves at Tamb = 25°C
Figure 5-1. VIN versus IIN_DC, VS = 5V
3
2.94
2.79
2.44
2
1
0
1.14
0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (µA)
Figure 5-2.
I
Eemin versus IIN_DC, VS = 5V
100
10
1
3.6
1.2
0.49
0
0.1
1
10
IIN_DC (µA)
100
1000
ATA2525 [DATASHEET]
5
4854H–AUTO–03/14
Figure 5-3. Data Transmission Rate, VS = 5V
1750
1418
Standard type
Lamp type
1493
1500
1250
1000
750
500
250
0
1119
735
931
693
980
730
Noise type
547
28
32
36
40
44
f0 (kHz)
Figure 5-4. Typical Bandpass Curve
1.1
1.0
0.9
0.8
-3dB
-3dB
0.7
0.6
0.5
Δf
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f0/Δf; Δf = –3dB values. Example: Q = 1/(1.047 – 0.954) = 11
6
ATA2525 [DATASHEET]
4854H–AUTO–03/14
Figure 5-5. Illustration of Used Terms
1066μs
Period (P = 16)
533μs
7
Burst (N = 16 Pulses)
IN
1
16
7
7
33μs
tDON
tDOFF
Envelope 1
533μs
OUT
Envelope 16
17056μs/Data Word
OUT
Telegram Pause
Data Word
17ms
Data Word
t
TREP = 62ms
Example: f = 30kHz, burst with 16 pulses, 16 periods
Figure 5-6. Test Circuit
I
Ee = ΔU1/400kΩ
ΔU1
V
DD = 5V
400kΩ
1nF
IIN_DC
R1 = 220Ω
VS
IIN
IEe
20kΩ
1nF
IN
ATA2525 OUT
VPULSE
IPIN_AC100
GND
ΔU2
+
IIN_DC = ΔU2/40kΩ
20kΩ
f0
C1 = 4.7μF
16
-
DC
+
tPER = 10ms
ATA2525 [DATASHEET]
7
4854H–AUTO–03/14
Figure 5-7. Application Circuit
VDD = 5V
(1) optional
R1 = 220Ω
R2(1) > 2.4kΩ
RPU = 40kΩ
IS
VS
IOCL
IL
IN
ATA2525
IN
Microcontroller
IIN
OUT
GND
VIN
VO
+
IIN_DC IEe
C
1 = 4.7μF
C2(1) ≤ 470pF
8
ATA2525 [DATASHEET]
4854H–AUTO–03/14
6.
Chip Dimensions
Figure 6-1. Chip Size in µm
990,960
GND
393,839
IN
603,828
scribe
OUT
224,495
ATA2525
47,72
VS
Zapping
Versioning
0,0
width
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Note:
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.04mm
1.11mm
290µ ±5%
80µ × 80µ
60µ × 60µ
AlCu/AlSiTi(1)
0.8µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
(1)
Material
Si3N4/SiO2
Thickness
0.7/0.3µm
Note:
1. Value depends on manufacture location.
ATA2525 [DATASHEET]
9
4854H–AUTO–03/14
7.
Ordering Information
Delivery: unsawn wafers (DDW) in box
Extended Type Number
ATA2525S1xx(1)C-DDW
ATA2525S3xx(1)C-DDW
ATA2525S5xx(1)C-DDW
D(2)
1493
980
Type
Standard type: high data rate
Lamp type: enhanced suppression of disturbances, secure data transmission
Noise type: best suppression of disturbances, low data rate
730
Notes: 1. xx means the used carrier frequency value (33, 36, 37, 38 or 40kHz)
2. Maximum data transmission rate up to bits/s with f0 = 40kHz, VS = 5V (see Figure 5-2 on page 5
8.
Pad Layout
Figure 8-1. Pad Layout
GND
IN
OUT
ATA2525
VS
Zapping
Versioning
Table 8-1. Pin Description
Symbol
OUT
Function
Data output
Supply voltage
GND
VS
GND
IN
Input pin diode
f0 adjust
Zapping
Versioning
Type adjust
10
ATA2525 [DATASHEET]
4854H–AUTO–03/14
9.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
4854H-AUTO-03/14
• Put datasheet in the newest template
• Page 3: Thermal Resistance table deleted
• Page 3 and 4: Pin column in Electrical Characteristics table deleted
• Put datasheet in newest template
4854G-AUTO-05/10
4854F-AUTO-09/09
• Ordering Information table changed
• Features on page 1 changed
• Applications on page 1 changed
• Section 1 “Description” on page 1 changed
• Section 2 “Pin Configuration” on page 2 deleted
• Section 4 “Electrical Characteristics” number 3.3 on page 4 changed
• Section 4 “Electrical Characteristics” number 3.4 on page 4 changed
• Section 6 “ESD” on page 5 deleted
4854E-AUTO-10/06
4854D-AUTO-04/06
• Section 10 “Ordering Information” on page 10 changed
• Put datasheet in a new template
• Section 10 “Ordering Information” on page 10 changed
ATA2525 [DATASHEET]
11
4854H–AUTO–03/14
X
X X X X
X
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© 2014 Atmel Corporation. / Rev.: 4854H–AUTO–03/14
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