DSA1001DL3T [MICROCHIP]

1.8V-3.3V Low-Power Precision CMOS Oscillators for Automotive;
DSA1001DL3T
型号: DSA1001DL3T
厂家: MICROCHIP    MICROCHIP
描述:

1.8V-3.3V Low-Power Precision CMOS Oscillators for Automotive

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DSA1001/3/4  
1.8V-3.3V Low-Power Precision CMOS Oscillators for Automotive  
Features  
General Description  
• Automotive AEC-Q100 Qualified  
• Frequency Range: 1 MHz to 150 MHz  
• Exceptional Stability over Temperature  
- ±20 ppm, ±25 ppm, ±50 ppm  
• Operating Voltage  
The DSA1001/3/4 is a silicon MEMS based CMOS  
family of oscillators that offers excellent jitter and  
stability performance over a wide range of supply  
voltages and temperatures. The device operates from  
1 MHz to 150 MHz with supply voltages between 1.8 to  
3.3 volts and temperature ranges up to –40°C to  
105°C.  
- 1.7 to 3.6V  
• Operating Temperature Range  
- Automotive Grade 2: –40°C to 105°C  
- Automotive Grade 3: –40°C to 85°C  
• Low Operating and Standby Current  
- 6 mA Operating (1 MHz)  
The DSA1001/3/4 incorporate an all silicon resonator  
that is extremely robust and nearly immune to stress  
related fractures, common to crystal based oscillators.  
Without sacrificing the performance and stability  
required of today’s systems, a crystal-less design  
allows for a higher level of reliability, making the  
DSA1001/3/4 ideal for rugged, industrial, and portable  
applications where stress, shock, and vibration can  
damage quartz crystal based systems.  
- 15 µA Standby (Max.)  
• Ultra Miniature Footprint  
- 2.5 mm x 2.0 mm x 0.85 mm  
- 3.2 mm x 2.5 mm x 0.85 mm  
- 5.0 mm x 3.2 mm x 0.85 mm  
• MIL-STD 883 Shock and Vibration Resistant  
• Pb Free, RoHS, Reach SVHC Compliant  
Available in industry standard packages, the  
DSA1001/3/4 can be “dropped-in” to the same PCB  
footprint as standard crystal oscillators.  
The DSA1003 and DSA1004 have the same  
functionality and performance as the DSA1001, but  
feature higher output drives of 25 pF and 40 pF,  
respectively.  
Applications  
• Automotive Infotainment  
• Automotive ADAS  
Package Types  
• Automotive Camera Module  
DSA1001/3/4  
CDFN/DFN  
(Top View)  
Benefits  
• Replace High Temperature Crystals and Quartz  
Oscillators  
• Pin for Pin “Drop-In” Replacement for Industry  
Standard Oscillators  
STANDBY#  
GND  
VDD  
OUT  
• Semiconductor Level Reliability, Significantly  
Higher than Quartz  
• Longer Battery Life/Reduced Power Consumption  
• Compact Plastic Package  
• Cost Effective  
2017 Microchip Technology Inc.  
DS20005889A-page 1  
DSA1001/3/4  
Block Diagram  
VDD  
OUTPUT  
VCO  
PFD  
RESONATOR  
FRAC-N  
PLL  
STANDBY#  
GND  
(PIN1)  
DS20005889A-page 2  
2017 Microchip Technology Inc.  
DSA1001/3/4  
1.0  
ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings †  
Input Voltage (VIN) ............................................................................................................................–0.3V to VDD + 0.3V  
ESD Protection ....................................................................................................... 4 kV HBM, ±200V MM, 1.5 kV CDM  
Recommended Operating Conditions  
Supply Voltage (VDD) ................................................................................................................................ +1.7V to +3.6V  
Output Load (ZL)............................................................................................................................. R > 10 kΩ, C ≤ 15 pF  
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated  
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended  
periods may affect device reliability.  
TABLE 1-1:  
ELECTRICAL CHARACTERISTICS  
Electrical Characteristics: VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified.  
Parameters  
Frequency  
Sym.  
Min.  
Typ.  
Max.  
Units  
MHz Single Frequency  
Includes frequency variations  
Conditions  
F0  
1
150  
±20  
±25  
±50  
±5  
due to initial tolerance,  
temperature and power supply  
voltage  
Frequency Tolerance  
Δf  
ppm  
Aging  
Δf  
ppm  
µA  
1 year @ +25°C  
T = +25°C  
Supply Current, Standby  
IDD  
15  
Output Startup Time  
(Note 1)  
tSU  
1.0  
1.3  
ms  
T = +25°C  
Output Disable Time  
Output Duty Cycle  
Input Logic Level High  
Input Logic Level Low  
VDD = 1.8V  
tDA  
SYM  
VIH  
45  
20  
100  
55  
ns  
%
V
0.75 x VDD  
VIL  
0.25 x VDD  
V
6.0  
6.5  
7.2  
8.3  
6.3  
7.1  
1 MHz  
CL = 0 pF,  
27 MHz  
Supply Current, No Load  
IDD  
mA  
RL = ∞,  
T = +25°C  
8.5  
70 MHz  
11.9  
150 MHz  
0.8 x VDD  
0.8 x VDD  
0.8 x VDD  
V
V
V
V
V
V
–6 mA, DSA1004, CL = 40 pF  
–6 mA, DSA1003, CL = 25 pF  
–4 mA, DSA1001, CL = 15 pF  
6 mA, DSA1004, CL = 40 pF  
6 mA, DSA1003, CL = 25 pF  
6 mA, DSA1001, CL = 15 pF  
Output Logic Level High  
Output Logic Level Low  
VOH  
0.2 x VDD  
0.2 x VDD  
0.2 x VDD  
VOL  
Note 1: tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical  
values.  
2: Measured over 50k clock cycles.  
2017 Microchip Technology Inc.  
DS20005889A-page 3  
DSA1001/3/4  
TABLE 1-1:  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
Electrical Characteristics: VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified.  
Parameters  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
DSA1001,  
CL = 15 pF  
1.4  
3.0  
Output Transition Rise  
Time  
DSA1003,  
CL = 25 pF  
T = +25°C,  
20% to 80%  
tR  
1.5  
1.8  
1.0  
1.1  
1.2  
3.0  
3.0  
3.0  
3.0  
3.0  
ns  
DSA1004,  
CL = 40 pF  
DSA1001,  
CL = 15 pF  
Output Transition Fall  
Time  
DSA1003,  
CL = 25 pF  
T = +25°C,  
20% to 80%  
tF  
ns  
ps  
DSA1004,  
CL = 40 pF  
Jitter, Max.  
Cycle-to-Cycle  
JCC  
JP  
60  
10  
f = 100 MHz (Note 2)  
Period Jitter  
15  
psRMS f = 100 MHz (Note 2)  
VDD = 2.5V  
6.0  
6.7  
7.7  
9.6  
6.4  
7.5  
1 MHz  
CL = 0 pF,  
RL = ∞,  
T = +25°C  
27 MHz  
70 MHz  
150 MHz  
Supply Current, No Load  
IDD  
mA  
9.4  
13.9  
0.9 x VDD  
0.8 x VDD  
0.8 x VDD  
V
V
V
V
V
V
–6 mA, DSA1004, CL = 40 pF  
–6 mA, DSA1003, CL = 25 pF  
–4 mA, DSA1001, CL = 15 pF  
6 mA, DSA1004, CL = 40 pF  
6 mA, DSA1003, CL = 25 pF  
4 mA, DSA1001, CL = 15 pF  
Output Logic Level High  
Output Logic Level Low  
VOH  
0.1 x VDD  
0.2 x VDD  
0.2 x VDD  
VOL  
DSA1001, CL =  
15 pF  
1.0  
1.1  
1.2  
0.9  
1.0  
1.1  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
Output Transition Rise  
Time  
DSA1003,  
CL = 25 pF  
T = +25°C,  
20% to 80%  
tR  
ns  
ns  
DSA1004,  
CL = 40 pF  
DSA1001,  
CL = 15 pF  
Output Transition Fall  
Time  
DSA1003,  
CL = 25 pF  
T = +25°C,  
20% to 80%  
tF  
DSA1004,  
CL = 40 pF  
Note 1: tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical  
values.  
2: Measured over 50k clock cycles.  
DS20005889A-page 4  
2017 Microchip Technology Inc.  
DSA1001/3/4  
TABLE 1-1:  
ELECTRICAL CHARACTERISTICS (CONTINUED)  
Electrical Characteristics: VDD = 1.8 to 3.3V; TA = +85°C unless otherwise specified.  
Parameters  
Jitter, Max.  
Cycle-to-Cycle  
Period Jitter  
VDD = 3.3V  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
JCC  
JP  
50  
5
ps  
f = 100 MHz (Note 2)  
10  
psRMS f = 100 MHz (Note 2)  
6.0  
6.8  
8.2  
10.8  
6.5  
8.0  
1 MHz  
CL = 0 pF,  
RL = ∞,  
T = +25°C  
27 MHz  
70 MHz  
150 MHz  
Supply Current, No Load  
IDD  
mA  
10.5  
16.6  
0.9 x VDD  
0.9 x VDD  
0.8 x VDD  
V
V
V
V
V
V
–8 mA, DSA1004, CL = 40 pF  
–6 mA, DSA1003, CL = 25 pF  
–4 mA, DSA1001, CL = 15 pF  
8 mA, DSA1004, CL = 40 pF  
6 mA, DSA1003, CL = 25 pF  
4 mA, DSA1001, CL = 15 pF  
Output Logic Level High  
Output Logic Level Low  
VOH  
0.1 x VDD  
0.1 x VDD  
0.2 x VDD  
VOL  
DSA1001,  
CL = 15 pF  
1.0  
1.1  
1.2  
0.9  
1.0  
1.1  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
Output Transition Rise  
Time  
DSA1003,  
CL = 25 pF  
T = +25°C,  
20% to 80%  
tR  
ns  
DSA1004,  
CL = 40 pF  
DSA1001,  
CL = 15 pF  
Output Transition Fall  
Time  
DSA1003,  
CL = 25 pF  
T = +25°C,  
20% to 80%  
tF  
ns  
ps  
DSA1004,  
CL = 40 pF  
Jitter, Max.  
Cycle-to-Cycle  
JCC  
JP  
50  
5
f = 100 MHz (Note 2)  
Period Jitter  
10  
psRMS f = 100 MHz (Note 2)  
Note 1: tSU is time to stable output frequency after VDD is applied. tSU and tEN (after EN is asserted) are identical  
values.  
2: Measured over 50k clock cycles.  
2017 Microchip Technology Inc.  
DS20005889A-page 5  
DSA1001/3/4  
TEMPERATURE SPECIFICATIONS (Note 1)  
Parameters  
Temperature Ranges  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
–40  
–40  
+105  
+85  
°C  
°C  
°C  
°C  
°C  
Ordering Option L  
Operating Temperature Range (T)  
TA  
Ordering Option I  
Junction Operating Temperature  
Storage Temperature Range  
Soldering Temperature Range  
TJ  
TA  
TS  
+150  
+150  
+260  
–55  
40 sec. max  
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable  
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the  
maximum allowable power dissipation will cause the device operating junction temperature to exceed the  
maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.  
DS20005889A-page 6  
2017 Microchip Technology Inc.  
DSA1001/3/4  
2.0  
PIN DESCRIPTIONS  
The descriptions of the pins are listed in Table 2-1.  
TABLE 2-1:  
Pin Number  
CDFN PACKAGE PIN FUNCTION TABLE  
Symbol  
Description  
1
2
3
4
STANDBY#  
GND  
Standby input (Section 4.1 “Standby Function”)  
Power supply ground  
OUT  
Oscillator output  
VDD  
Positive power supply  
2017 Microchip Technology Inc.  
DS20005889A-page 7  
DSA1001/3/4  
3.0  
NOMINAL PERFORMANCE CHARACTERISTICS  
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein  
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
FIGURE 3-1:  
Supply Current.  
FIGURE 3-4:  
FIGURE 3-5:  
FIGURE 3-6:  
Supply Current.  
FIGURE 3-2:  
Rise Time.  
Fall Time.  
FIGURE 3-3:  
Rise Time.  
Fall Time.  
DS20005889A-page 8  
2017 Microchip Technology Inc.  
DSA1001/3/4  
4.0  
OUTPUT WAVEFORM  
tR  
tF  
VOH  
OUTPUT  
VOL  
tEN  
1/fo  
tDA  
VIH  
STANDBY#  
VIL  
FIGURE 4-1:  
Output Waveform.  
4.1  
Standby Function  
Standby# (Pin 1)  
Output (Pin 3)  
High Level  
Open (no connect)  
Low Level  
Output ON  
Output ON  
High Impedance  
2017 Microchip Technology Inc.  
DS20005889A-page 9  
DSA1001/3/4  
5.0  
TEST CIRCUIT  
IDD  
3
2
4
1
VDD  
0.01μF  
*VSD  
15pF  
*VSD = Standby# Logic Level Input  
FIGURE 5-1:  
DSA1001/3/4 Test Circuit.  
DS20005889A-page 10  
2017 Microchip Technology Inc.  
DSA1001/3/4  
6.0  
BOARD LAYOUT (RECOMMENDED)  
Via to GND Layer  
C1  
VDD  
Standby  
Output  
GND  
Via to GND Layer  
FIGURE 6-1:  
Recommended Board Layout for DSA1001/3/4.  
2017 Microchip Technology Inc.  
DS20005889A-page 11  
DSA1001/3/4  
7.0  
SOLDER REFLOW PROFILE  
20-40  
Sec  
260  
°
C
217  
200  
°
°
C
C
60-150  
Sec  
ReŇow  
60-180  
Sec  
150  
25  
°
°
C
C
Cool  
Pre heat  
Time  
8 min max  
FIGURE 7-1:  
Solder Reflow Profile.  
MSL 1 @ 260°C refer to JSTD-020C  
Ramp-Up Rate (200°C to Peak Temp)  
Preheat Time 150°C to 200°C  
Time maintained above 217°C  
Peak Temperature  
3°C/sec. max.  
60 to 180 sec.  
60 to 150 sec.  
255°C to 260°C  
20 to 40 sec.  
Time within 5°C of Actual Peak  
Ramp-Down Rate  
6°C/sec. max.  
8 minutes max.  
Time 25°C to Peak Temperature  
DS20005889A-page 12  
2017 Microchip Technology Inc.  
DSA1001/3/4  
8.0  
8.1  
PACKAGING INFORMATION  
Package Marking Information  
Example  
4-Lead CDFN/DFN*  
XXXXXXX  
DCPYYWW  
0SSS  
0200000  
DCP1121  
0603  
Legend: XX...X Product code, customer-specific information, or frequency in MHz  
without printed decimal point  
Y
Year code (last digit of calendar year)  
YY  
WW  
NNN  
Year code (last 2 digits of calendar year)  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
Pb-free JEDEC® designator for Matte Tin (Sn)  
This package is Pb-free. The Pb-free JEDEC designator ( )  
e
3
*
e
3
can be found on the outer packaging for this package.  
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle  
mark).  
Note: In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line, thus limiting the number of available  
characters for customer-specific information. Package may or may not include  
the corporate logo.  
Underbar (_) and/or Overbar (‾) symbol may not be to scale.  
2017 Microchip Technology Inc.  
DS20005889A-page 13  
DSA1001/3/4  
4-Lead CDFN 5.0 mm x 3.2 mm Package Outline & Recommended Land Pattern  
DS20005889A-page 14  
2017 Microchip Technology Inc.  
DSA1001/3/4  
4-Lead CDFN 3.2 mm x 2.5 mm Package Outline & Recommended Land Pattern  
2017 Microchip Technology Inc.  
DS20005889A-page 15  
DSA1001/3/4  
4-Lead CDFN 2.5 mm x 2.0 mm Package Outline & Recommended Land Pattern  
DS20005889A-page 16  
2017 Microchip Technology Inc.  
DSA1001/3/4  
APPENDIX A: REVISION HISTORY  
Revision A (March 2018)  
• Initial release of data sheet DSA1001/3/4 to  
Microchip format data sheet DS20005889A.  
2017 Microchip Technology Inc.  
DS20005889A-page 17  
DSA1001/3/4  
NOTES:  
DS20005889A-page 18  
2017 Microchip Technology Inc.  
DSA1001/3/4  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.  
Examples:  
X
PART NO.  
X
X
-XXX.XXXX  
X
a)  
DSA1003BL3-030.0000:  
Device Package  
1.8V - 3.3V Low-Power Pre-  
cision CMOS Oscillator, 4-  
Temperature Stability  
Range  
Frequency  
Packing  
Option  
Lead 5.0 mm  
x 3.2 mm  
CDFN, Automotive Grade 2  
Temperature Range,  
±20 ppm, 30 MHz Output  
Frequency, 72/Tube  
Device:  
DSA1001/3/4: 1.8V - 3.3V Low-Power Precision CMOS  
Oscillator for Automotive  
Package:  
B
C
D
=
=
=
4-Lead 5.0 mm x 3.2 mm CDFN  
4-Lead 3.2 mm x 2.5 mm CDFN  
4-Lead 2.5 mm x 2.0 mm CDFN  
b)  
DSA1004DI1-075.0000T:   
1.8V - 3.3V Low-Power Pre-  
cision CMOS Oscillator, 4-  
Lead 2.5 mm  
x 2.0 mm  
CDFN, Automotive Grade 3  
Temperature Range,  
±50 ppm, 75 MHz  
Output Frequency, 1,000/  
Reel  
Temperature  
Range:  
I
L
=
=
–40C to +85C (Automotive Grade 3)  
–40C to +105C (Automotive Grade 2)  
Stability:  
1
2
3
=
=
=
±50 ppm  
±25 ppm  
±20 ppm  
Frequency:  
xxx.xxxx =1 MHz to 150 MHz (user-defined)  
<blank> = 110/Tube  
Packing Option:  
T
=
1,000/Reel  
Please use the Microchip Clockworks to check AEC-Q100 compliance status and  
build the exact part number.  
Note 1:  
Tape and Reel identifier only appears in the  
catalog part number description. This  
identifier is used for ordering purposes and  
is not printed on the device package. Check  
with your Microchip Sales Office for package  
availability with the Tape and Reel option.  
2017 Microchip Technology Inc.  
DS20005889A-page 19  
DSA1001/3/4  
NOTES:  
DS20005889A-page 20  
2017 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is provided only for your convenience  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
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OTHERWISE, RELATED TO THE INFORMATION,  
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and India. The Company’s quality system processes and procedures  
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
Silicon Storage Technology is a registered trademark of Microchip  
Technology Inc. in other countries.  
GestIC is a registered trademark of Microchip Technology  
Germany II GmbH & Co. KG, a subsidiary of Microchip Technology  
Inc., in other countries.  
All other trademarks mentioned herein are property of their  
respective companies.  
QUALITYMANAGEMENTꢀꢀSYSTEMꢀ  
CERTIFIEDBYDNVꢀ  
© 2017, Microchip Technology Incorporated, All Rights Reserved.  
ISBN: 978-1-5224-2763-6  
== ISO/TS16949==ꢀ  
2017 Microchip Technology Inc.  
DS20005889A-page 21  
Worldwide Sales and Service  
AMERICAS  
ASIA/PACIFIC  
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Corporate Office  
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Technical Support:  
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support  
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Tel: 905-695-1980  
Fax: 905-695-2078  
DS20005889A-page 22  
2017 Microchip Technology Inc.  
10/25/17  

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