LND150N8GP003 [MICROCHIP]
N-Channel Depletion-Mode DMOS FETs;
| 型号： | LND150N8GP003 |
| 厂家： | 
MICROCHIP |
| 描述： | N-Channel Depletion-Mode DMOS FETs |
| 文件： | 总16页 (文件大小：580K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LND150/LND250
N-Channel Depletion-Mode DMOS FETs
Features
General Description
The LND150 and LND250 are high-voltage N-channel
Depletion-mode (normally-on) transistors utilizing
lateral DMOS technology. The gate is ESD protected.
• Free from Secondary Breakdown
• Low-Power Drive Requirement
• Ease of Paralleling
The LND150/LND250 are ideal for high-voltage appli-
cations, such as normally-on switches, precision
constant-current sources, voltage-ramp generation
and amplification.
• Excellent Thermal Stability
• Integral Source-Drain Diode
• High Input Impedance and Low CISS
• ESD Gate Protection
Applications
• Solid-State Relays
• Normally-On Switches
• Converters
• Power Supply Circuits
• Constant-Current Sources
• Input Protection Circuits
Package Types
3-lead TO-92
3-lead SOT-89
3-lead SOT-23
(Top view)
(Top view)
(Top view)
SOURCE
SOURCE
DRAIN
DRAIN
SOURCE
DRAIN
SOURCE
GATE
GATE
GATE
See Table 3-1, Table 3-2 and Table 3-3 for pin information.
2018 Microchip Technology Inc.
DS20005454A-page 1
LND150/LND250
1.0
ELECTRICAL CHARACTERISTICS
†
ABSOLUTE MAXIMUM RATINGS
Drain-to-Source Voltage ...................................................................................................................................... BVDSX
Drain-to-Gate Voltage .......................................................................................................................................... BVDGX
Gate-to-Source Voltage ......................................................................................................................................... ±20V
Operating Ambient Temperature, TA ...................................................................................................... –55°C to 150°C
Storage Temperature, TS ....................................................................................................................... –55°C to 150°C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle
Parameter
Sym.
Min. Typ. Max. Unit
Conditions
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
BVDSX
VGS(OFF)
∆VGS(OFF)
500
–1
—
—
—
—
–3
5
V
V
VGS = –10V, ID = 1 mA
VGS = 25V, ID = 100 nA
Change in VGS(OFF) with Temperature
—
mV/°C VGS = 25V, ID = 100 nA
(Note 1)
Gate Body Leakage Current
IGSS
—
—
—
—
100
100
nA
nA
VGS = ±20V, VDS = 0V
VGS = –10V, VDS = 450V
VDS = 0.8V Maximum rating,
VGS = –10V, TA= 125°C
(Note 1)
Drain-to-Source Leakage Current
ID(OFF)
—
—
—
100
3
µA
Saturated Drain-to-Source Current
IDSS
1
mA VGS = 0V, VDS = 25V
Static Drain-to-Source On-State Resistance
RDS(ON)
—
850 1000
Ω
VGS = 0V, ID = 0.5 mA
VGS = 0V, ID = 0.5 mA
(Note 1)
Change in RDS(ON) with Temperature
∆RDS(ON)
—
—
1.2 %/°C
Note 1: Specification is obtained by characterization and is not 100% tested.
DS20005454A-page 2
2018 Microchip Technology Inc.
LND150/LND250
AC ELECTRICAL CHARACTERISTICS
Electrical Specifications: TA = 25°C unless otherwise specified. Specification is obtained by characterization and is
not 100% tested.
Parameter
Sym. Min. Typ. Max. Unit
Conditions
Forward Transconductance
Input Capacitance
GFS
CISS
COSS
CRSS
td(ON)
tr
1
2
—
10
3.5
1
mmho VDS = 0V, ID = 1 mA
pF
—
—
—
—
—
—
—
7.5
2
VGS = –10V,
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
pF
pF
ns
ns
ns
ns
VDS = 25V,
f = 1 MHz
0.5
0.09
0.45
0.1
1.3
—
—
—
—
VDD = 25V,
Rise Time
ID = 1 mA,
RGEN = 25Ω
Turn-Off Delay Time
td(OFF)
tf
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
VSD
trr
—
—
—
0.9
—
V
VGS = –10V, ISD = 1 mA (Note 1)
200
ns
VGS = –10V, ISD = 1 mA
Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty
cycle.
TEMPERATURE SPECIFICATIONS
Parameter
Sym. Min. Typ. Max. Unit
Conditions
TEMPERATURE RANGE
Operating Ambient Temperature
Storage Temperature
PACKAGE THERMAL RESISTANCE
3-lead TO-92
TA
TS
–55
–55
—
—
+150
+150
°C
°C
JA
JA
JA
—
—
—
132
203
133
—
—
—
°C/W
°C/W
°C/W
3-lead SOT-23
3-lead SOT-89
THERMAL CHARACTERISTICS
ID (Note 1)
(Continuous) (Pulsed)
ID
Power Dissipation
at TA = 25°C
(W)
IDRM
(Note 1)
(A)
IDR
(mA)
Package
(mA)
(A)
3-lead TO-92
3-lead SOT-23
3-lead SOT-89
30
13
30
30
30
30
0.74
0.36
30
13
30
30
30
1.6 (Note 2) 30
Note 1: ID (continuous) is limited by maximum rated TJ.
2: TA = 25°C. Mounted on an FR4 Board, 25 mm x 25 mm x 1.57 mm.
2018 Microchip Technology Inc.
DS20005454A-page 3
LND150/LND250
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g. outside specified power supply range) and therefore outside the warranted range.
6
5
4
3
2
1
0
6
5
4
3
2
1
0
VGS = 1.0V
VGS = 1.0V
0.5V
0V
0.5V
0V
-0.5V
-1.0V
-0.5V
-1.0V
0
1
2
3
5
0
250
500
4
VDS (V)
VDS (V)
FIGURE 2-1:
OutputCharacteristics.
FIGURE 2-4:
Saturation Characteristics.
10
2
VDS = 400V
SOT-89
8
6
4
2
0
TA = -55°C
25°C
1
TO-92
125°C
SOT-23
0
0
2
4
6
8
10
0
50
100
150
ID (milliamps)
TA (°C)
FIGURE 2-2:
Transconductance vs. Drain
FIGURE 2-5:
Power Dissipation vs.
Current.
Ambient Temperature.
100
1.0
SOT-89 (DC)
TO-92 (DC)
Pulsed
SOT-89
TA = 25°C
PD = 1.2W
0.8
0.6
0.4
10
SOT-23 (DC)
1
TO-92
PD = 1.0W
TC = 25°C
0.2
0
TA = 25°C
300μs pulse
2% duty cycle
0.1
0.001
0.01
0.1
1.0
10
1
10
100
1000
tP (seconds)
VDS (V)
FIGURE 2-6:
Thermal Response
FIGURE 2-3:
Maximum Rated Safe
Characteristics.
Operating Area.
DS20005454A-page 4
2018 Microchip Technology Inc.
LND150/LND250
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS = -5.0V
1.1
ID
↓
25°C
LND1
125°C
RSOURCE
1.0
0.9
-50
0
50
100
150
10
100
1K
10K
100K
Tj (OC)
RSOURCE (Ω)
FIGURE 2-7:
Temperature.
10
BV
Variation with
FIGURE 2-10:
Drain Current vs. R
.
SOURCE
DSS
1.8
VDS = 400V
2.0
1.6
1.4
1.2
1.0
TA = -55°C
RDS(ON) @ ID = 1.0mA
1.6
25°C
125°C
1.2
0.8
0.4
5
VGS(OFF) @ 100nA
0.8
-50
0
0
50
100
150
-1
0
1
2
3
VGS (V)
Tj (OC)
FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
V
and R Variation
GS(OFF) DS
with Temperature.
10
10
VGS = -10V
8.7pF
CISS
VDS = 20V
40V
60V
5
0
5
COSS
CRSS
0
-5
0
10
20
30
40
0
0.1
0.2
0.3
VDS (V)
QC (nanocoulombs)
FIGURE 2-9:
Capacitance vs. Drain-to-
FIGURE 2-12:
Gate Drive Dynamic
Source Voltage.
Characteristics.
2018 Microchip Technology Inc.
DS20005454A-page 5
LND150/LND250
3.0
PIN DESCRIPTION
The details on the pins of LND150/LND250 are listed
on Table 3-1, Table 3-2 and Table 3-3. Refer
to Package Types for the location of pins.
TABLE 3-1:
Pin Number
TO-92 PIN FUNCTION TABLE
Pin Name
Description
Description
Description
1
2
3
SOURCE
GATE
SOURCE
GATE
DRAIN
DRAIN
TABLE 3-2:
Pin Number
SOT-23 PIN FUNCTION TABLE
Pin Name
GATE
DRAIN
GATE
1
2
3
DRAIN
SOURCE
SOURCE
TABLE 3-3:
Pin Number
SOT-89 PIN FUNCTION TABLE
Pin Name
1
2, 4
3
GATE
SOURCE
DRAIN
GATE
SOURCE
DRAIN
DS20005454A-page 6
2018 Microchip Technology Inc.
LND150/LND250
4.0
FUNCTIONAL DESCRIPTION
Figure 4-1 illustrates the switching waveforms and test
circuit for LND150/LND250.
0V
VDD
90%
INPUT
Pulse
RL
10%
Generator
-10V
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tf
tr
VDD
OUTPUT
INPUT
D.U.T.
10%
10%
90%
90%
0V
FIGURE 4-1:
Switching Waveforms and Test Circuit.
TABLE 4-1:
PRODUCT SUMMARY
RDS(ON)
IDSS(ON)
(Minimum)
(mA)
BVDSX/BVDGX
(Maximum)
(V)
(Ω)
500
1000
1
2018 Microchip Technology Inc.
DS20005454A-page 7
LND150/LND250
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
Example
LND150
3-lead TO-92
XXXXXX
e
3
e3
XX
N3
YWWNNN
802343
3-lead SOT-23
Example
NDE343
XXXNNN
3-lead SOT-89
Example
LN1E802
XXXXYWW
343
NNN
Legend: XX...X Product Code or Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( )
e
3
*
e
3
can be found on the outer packaging for this package.
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for product code or customer-specific information. Package may or
not include the corporate logo.
DS20005454A-page 8
2018 Microchip Technology Inc.
LND150/LND250
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
2018 Microchip Technology Inc.
DS20005454A-page 9
LND150/LND250
3-Lead TO-236AB (SOT-23) Package Outline (K1/T)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
E1
E
Gauge
Plane
0.25
Seating
Plane
L
1
2
L1
e
b
e1
View B
Top View
View B
A
A2
A
Seating
Plane
A1
View A - A
Side View
A
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Symbol
A
0.89
-
A1
0.01
-
A2
b
0.30
-
D
E
2.10
-
E1
e
e1
L
L1
ș
0O
-
MIN
NOM
MAX
0.88
0.95
1.02
2.80
2.90
3.04
1.20
1.30
1.40
0.20†
0.50
0.60
Dimension
(mm)
0.95
BSC
1.90
BSC
0.54
REF
1.12
0.10
0.50
2.64
8O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
DS20005454A-page 10
2018 Microchip Technology Inc.
LND150/LND250
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
H
E
E1
1
2
3
L
b
b1
A
e
e1
Top View
Side View
Note: For the most current package drawings, see the Microchip Packaging Specification at www.microchip.com/packaging.
Symbol
A
1.40
-
b
0.44
-
b1
0.36
-
C
0.35
-
D
4.40
-
D1
1.62
-
E
2.29
-
E1
2.00†
-
e
e1
H
3.94
-
L
0.73†
-
MIN
NOM
MAX
Dimensions
(mm)
1.50
BSC
3.00
BSC
1.60
0.56
0.48
0.44
4.60
1.83
2.60
2.29
4.25
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
† This dimension differs from the JEDEC drawing
Drawings not to scale.
2018 Microchip Technology Inc.
DS20005454A-page 11
LND150/LND250
NOTES:
DS20005454A-page 12
2018 Microchip Technology Inc.
LND150/LND250
APPENDIX A: REVISION HISTORY
Revision A (August 2018)
• Converted and merged Supertex Doc#s
DSFP-LND150 and DSFP-LND250 to Microchip
DS20005454
• Changed the package marking format
• Removed the TO-92 N3 P005 media type
• Added some sections to comply with the standard
Microchip Technology Inc. documentation format
• Made minor text changes throughout the docu-
ment
2018 Microchip Technology Inc.
DS20005454A-page 13
LND150/LND250
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
-
-
PART NO.
Device
XX
X
X
Examples:
Package Environmental Media
Options Type
a) LND150N3-G:
N-Channel Depletion-Mode
DMOS FET, 3-lead TO-92,
1000/Bag
Devices:
LND150 = N-Channel Depletion-Mode DMOS FET
LND250 = N-Channel Depletion-Mode DMOS FET
b) LND150K1-G:
N-Channel Depletion-Mode
DMOS FET, 3-lead SOT-23,
3000/Reel
Packages:
N3
K1
N8
= 3-lead TO-92
= 3-lead SOT-23
= 3-lead SOT-89
c) LND150N8-G:
d) LND150N3-G-P002:
N-Channel Depletion-Mode
DMOS FET, 3-lead TO-92,
2000/Reel
Environmental:
Media Types:
G
= Lead (Pb)-free/ROHS-compliant package
(blank) = 1000/Bag for an N3 package
= 3000/Reel for a K1 package
N-Channel Depletion-Mode
DMOS FET, 3-lead TO-92,
2000/Reel
= 2000/Reel for an N8 package
= 2000/Reel for an N3 package
= 2000/Reel for an N3 package
= 2000/AMMO Pack for an N3 package
= 2000/AMMO Pack for an N3 package
P002
P003
P013
P014
Note: LND250 is only offered in 3-lead SOT-23 package.
DS20005454A-page 14
2018 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
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conveyed, implicitly or otherwise, under any Microchip
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Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR,
AVR logo, AVR Freaks, BitCloud, chipKIT, chipKIT logo,
CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo,
JukeBlox, KeeLoq, Kleer, LANCheck, LINK MD, maXStylus,
maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip
Designer, QTouch, SAM-BA, SpyNIC, SST, SST Logo,
SuperFlash, tinyAVR, UNI/O, and XMEGA are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
ClockWorks, The Embedded Control Solutions Company,
EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS,
mTouch, Precision Edge, and Quiet-Wire are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, BodyCom, CodeGuard,
CryptoAuthentication, CryptoAutomotive, CryptoCompanion,
CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average
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Programming, ICSP, INICnet, Inter-Chip Connectivity,
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MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation,
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Microchip received ISO/TS-16949:2009 certification for its worldwide
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All other trademarks mentioned herein are property of their
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QUALITYꢀMANAGEMENTꢀꢀSYSTEMꢀ
CERTIFIEDꢀBYꢀDNVꢀ
© 2018, Microchip Technology Incorporated, All Rights Reserved.
ISBN: 978-1-5224-3438-2
== ISO/TSꢀ16949ꢀ==ꢀ
2018 Microchip Technology Inc.
DS20005454A-page 15
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Tel: 49-8031-354-560
China - Shenyang
Tel: 86-24-2334-2829
Taiwan - Hsin Chu
Tel: 886-3-577-8366
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Israel - Ra’anana
Tel: 972-9-744-7705
China - Shenzhen
Tel: 86-755-8864-2200
Taiwan - Kaohsiung
Tel: 886-7-213-7830
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
China - Suzhou
Tel: 86-186-6233-1526
Taiwan - Taipei
Tel: 886-2-2508-8600
Detroit
Novi, MI
Tel: 248-848-4000
China - Wuhan
Tel: 86-27-5980-5300
Thailand - Bangkok
Tel: 66-2-694-1351
Italy - Padova
Tel: 39-049-7625286
Houston, TX
Tel: 281-894-5983
China - Xian
Tel: 86-29-8833-7252
Vietnam - Ho Chi Minh
Tel: 84-28-5448-2100
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Tel: 317-536-2380
China - Xiamen
Tel: 86-592-2388138
Norway - Trondheim
Tel: 47-7288-4388
China - Zhuhai
Tel: 86-756-3210040
Poland - Warsaw
Tel: 48-22-3325737
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Tel: 951-273-7800
Romania - Bucharest
Tel: 40-21-407-87-50
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Raleigh, NC
Tel: 919-844-7510
Sweden - Gothenberg
Tel: 46-31-704-60-40
New York, NY
Tel: 631-435-6000
Sweden - Stockholm
Tel: 46-8-5090-4654
San Jose, CA
Tel: 408-735-9110
Tel: 408-436-4270
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Canada - Toronto
Tel: 905-695-1980
Fax: 905-695-2078
DS20005454A-page 16
2018 Microchip Technology Inc.
08/15/18
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