MCP111T-240E/NB [MICROCHIP]

IC,VOLT DETECTOR,FIXED,+2.32V,TO-236,3PIN,PLASTIC;
MCP111T-240E/NB
型号: MCP111T-240E/NB
厂家: MICROCHIP    MICROCHIP
描述:

IC,VOLT DETECTOR,FIXED,+2.32V,TO-236,3PIN,PLASTIC

文件: 总22页 (文件大小:333K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MCP111/112  
Micropower Voltage Detector  
Features  
Description  
• Ultra low supply current: 1.75 µA (max.)  
The MCP111/112 are voltage-detecting devices  
designed to keep a microcontroller in reset until the  
system voltage has reached and stabilized at the  
proper level for reliable system operation. These  
devices also operate as protection from brown-out  
conditions when the system supply voltage drops  
below a safe operating level. The MCP111 and  
MCP112 are available in eight different trip voltages.  
Precision monitoring options of:  
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,  
4.38V and 4.63V  
• Resets microcontroller in a power loss event  
• Active-low VOUT pin:  
- MCP111 active-low, open-drain  
- MCP112 active-low, push-pull  
The MCP111 has an open-drain output with an active-  
low pin (VOUT). This device will assert VOUT when the  
voltage on the VDD pin is below the trip-point voltage.  
• Available in SOT23-3, TO-92 and SC70 packages  
Temperature Range:  
- Extended: -40°C to +125°C  
(except MCP1XX-195)  
The MCP112 has a push-pull output and will assert an  
active-low signal (VOUT pin) when the voltage on the  
VDD pin is below the trip-point voltage.  
- Industrial: -40°C to +85°C (MCP1XX-195 only)  
During operation, the output (VOUT) remains at a logic-  
high as long as VDD is greater that the specified  
threshold voltage. When VDD falls below the voltage  
trip point, VOUT is driven low.  
Applications  
• Critical µC and µP Power Monitoring Applications  
• Computers  
• Intelligent Instruments  
Package Types  
SOT23-3/SC-70  
• Portable Battery-Powered Equipment  
Block Diagram  
VDD  
1
2
VOUT  
VDD  
3
Comparator  
VOUT  
VSS  
+
Output  
Driver  
TO-92  
Band Gap  
Reference  
V
OUT  
VSS  
V
DD  
VSS  
2004 Microchip Technology Inc.  
DS21889A-page 1  
MCP111/112  
† Notice: Stresses above those listed under “Maximum Rat-  
ings” may cause permanent damage to the device. This is a  
stress rating only and functional operation of the device at  
those or any other conditions above those indicated in the  
operational listings of this specification is not implied. Expo-  
sure to maximum rating conditions for extended periods may  
affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings†  
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V  
DD  
Input current (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA  
DD  
Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA  
Rated Rise Time of V  
. . . . . . . . . . . . . . . . . . . . . . 100V/µs  
DD  
All inputs and outputs w.r.t. V  
. . . . . –0.6V to (V + 1.0V)  
DD  
SS  
Storage temperature . . . . . . . . . . . . . . . . . .65°C to + 150°C  
Ambient temp. with power applied . . . . . . .40°C to + 125°C  
Maximum Junction temp. with power applied . . . . . . . .150°C  
ESD protection on all pins. . . . . . . . . . . . . . . . . . . . . . . . . ≥ 2 kV  
DC CHARACTERISTICS  
Electrical Specifications: Unless otherwise indicated, all limits are specified for V = 1V to 5.5V, R = 100 k(only MCP111),  
DD  
PU  
T = –40°C to +125°C.  
A
Parameters  
Operating Voltage Range  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
V
V
1.0  
1.0  
5.5  
V
V
DD  
DD  
DD  
Specified V Value to V  
low  
I
= 10 uA, V  
< 0.2V  
RST  
DD  
OUT  
RST  
Operating Current  
I
< 1  
1.75  
1.929  
1.948  
µA  
V
V
Trip Point  
MCP1XX-195  
V
1.872  
1.853  
1.900  
1.900  
T = +25°C (Note 1)  
A
DD  
TRIP  
V
T = -40°C to +85°C  
A
(Note 2)  
MCP1XX-240  
MCP1XX-270  
MCP1XX-290  
MCP1XX-300  
MCP1XX-315  
MCP1XX-450  
MCP1XX-475  
2.285  
2.262  
2.591  
2.564  
2.857  
2.828  
2.886  
2.857  
3.034  
3.003  
4.314  
4.271  
4.561  
4.514  
2.320  
2.320  
2.630  
2.630  
2.900  
2.900  
2.930  
2.930  
3.080  
3.080  
4.380  
4.380  
4.630  
4.630  
±100  
2.355  
2.378  
2.670  
2.696  
2.944  
2.973  
2.974  
3.003  
3.126  
3.157  
4.446  
4.490  
4.700  
4.746  
V
T = +25°C (Note 1)  
A
V
Note 2  
V
T = +25°C (Note 1)  
A
V
Note 2  
V
T = +25°C (Note 1)  
A
V
Note 2  
V
T = +25°C (Note 1)  
A
V
Note 2  
V
T = +25°C (Note 1)  
A
V
Note 2  
V
T = +25°C (Note 1)  
A
V
Note 2  
V
T = +25°C (Note 1)  
A
V
Note 2  
V
Trip Point Tempco  
T
ppm/°C  
DD  
TPCO  
Threshold Hysteresis  
(min. = 1%, max = 6%)  
MCP1XX-195  
MCP1XX-240  
MCP1XX-270  
MCP1XX-290  
MCP1XX-300  
MCP1XX-315  
MCP1XX-450  
MCP1XX-475  
V
0.019  
0.023  
0.026  
0.029  
0.029  
0.031  
0.044  
0.046  
0.114  
0.139  
0.158  
0.174  
0.176  
0.185  
0.263  
0.278  
V
V
V
V
V
V
V
V
T = +25°C  
A
HYS  
Note 1: Trip point is ±1.5% from typical value.  
2: Trip point is ±2.5% from typical value.  
DS21889A-page 2  
2004 Microchip Technology Inc.  
MCP111/112  
DC CHARACTERISTICS (CONTINUED)  
Electrical Specifications: Unless otherwise indicated, all limits are specified for V = 1V to 5.5V, R = 100 k(only MCP111),  
DD  
PU  
T = –40°C to +125°C.  
A
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
=500 µA, V =V  
TRIP(MIN)  
V
V
Low Level Output Voltage  
High Level Output Voltage  
V
0.4  
V
V
I
I
OUT  
OL  
OL  
DD  
V
V
– 0.6  
= 1 mA, For only  
OH  
OUT  
OH  
DD  
MCP112 (push-pull output)  
Open-Drain Output Leakage Current  
(MCP111 only)  
I
0.1  
µA  
OD  
Note 1: Trip point is ±1.5% from typical value.  
2: Trip point is ±2.5% from typical value.  
VTRIP  
1V  
VDD  
tRPU  
tRPD  
VOH  
1V  
VOL  
VOUT  
tRT  
FIGURE 1-1:  
Timing Diagram.  
AC CHARACTERISTICS  
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ  
(only MCP111), TA = –40°C to +125°C.  
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Figure 1-1 and C = 50 pF  
(Note 1)  
V
V
Detect to V  
Inactive  
t
90  
µs  
L
DD  
OUT  
RPU  
t
V
ramped from V  
+
TRIP(MAX)  
Detect to V  
Active  
130  
5
µs  
µs  
RPD  
DD  
DD  
OUT  
250 mV down to V  
-
TRIP(MIN)  
250 mV, per Figure 1-1,  
C = 50 pF (Note 1)  
L
V
Rise Time After V  
Active  
t
For V  
10% to 90% of final  
OUT  
OUT  
RT  
OUT  
value per Figure 1-1, C = 50 pF  
L
(Note 1)  
Note 1: These parameters are for design guidance only and are not 100% tested.  
2004 Microchip Technology Inc.  
DS21889A-page 3  
MCP111/112  
TEMPERATURE CHARACTERISTICS  
Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k(only  
MCP111), TA = -40°C to +125°C.  
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Temperature Ranges  
Specified Temperature Range  
Specified Temperature Range  
Maximum Junction Temperature  
Storage Temperature Range  
Package Thermal Resistances  
Thermal Resistance, 3L-SOT23  
Thermal Resistance, 3L-SC-70  
Thermal Resistance, 3L-TO92  
TA  
TA  
TJ  
TA  
-40  
-40  
+85  
ºC  
ºC  
ºC  
ºC  
MCP1XX-195  
+125  
+150  
+150  
Except MCP1XX-195  
-65  
θJA  
θJA  
θJA  
336  
340  
ºC/W  
ºC/W  
ºC/W  
131.9  
DS21889A-page 4  
2004 Microchip Technology Inc.  
MCP111/112  
2.0  
TYPICAL PERFORMANCE CURVES  
Note:  
The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein  
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k(only MCP111;  
see Figure 4-1), TA = -40°C to +125°C.  
1.6  
1.4  
1.2  
1
1.6  
1.4  
1.2  
1
MCP111-195  
MCP111-195  
5.5V  
5.0V  
+125°C  
4.0V  
+85°C  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
2.8V  
-40°C  
2.1V  
1.7V  
+25°C  
1.0V  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
VDD (V)  
Temperature (°C)  
FIGURE 2-1:  
IDD vs. Temperature  
FIGURE 2-4:  
IDD vs. VDD (MCP111-195).  
(MCP111-195).  
1.6  
1.2  
5.5V  
5.0V  
MCP112-300  
MCP112-300  
1.4  
1.2  
1
1
0.8  
0.6  
0.4  
0.2  
0
4.0V  
2.8V  
1.7V  
+125°C  
0.8  
0.6  
0.4  
0.2  
0
+85°C  
2.1V  
-40°C  
1.0V  
+25°C  
1.0  
2.0  
3.0  
4.0  
DD (V)  
5.0  
6.0  
V
Temperature (°C)  
FIGURE 2-5:  
IDD vs. VDD (MCP112-300).  
FIGURE 2-2:  
IDD vs. Temperature  
(MCP112-300).  
1.6  
1
MCP112-475  
MCP112-475  
0.9  
5.5V  
2.1V  
1.4  
1.2  
1
0.8  
4.0V  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
5.0V  
2.8V  
0.8  
0.6  
0.4  
0.2  
0
+125°C  
+85°C  
1.7V  
1.0V  
-40°C  
+25°C  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
VDD (V)  
Temperature (°C)  
FIGURE 2-6:  
IDD vs. VDD (MCP112-475).  
FIGURE 2-3:  
IDD vs. Temperature  
(MCP112-475).  
2004 Microchip Technology Inc.  
DS21889A-page 5  
MCP111/112  
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k(only MCP111;  
see Figure 4-1), TA = -40°C to +125°C.  
0.120  
MCP111-195  
1.950  
1.945  
1.940  
1.935  
1.930  
1.925  
1.920  
1.915  
1.910  
1.905  
1.900  
1.895  
0.050  
0.045  
0.040  
0.035  
0.030  
0.025  
0.020  
0.015  
0.010  
0.005  
0.000  
VDD = 1.7V  
VTRIP, V increasing  
0.100  
0.080  
0.060  
0.040  
0.020  
0.000  
VHYS, Hysteresis  
+125°C  
MCP111-195  
max temp is  
+85°C  
+85°C  
-40°C  
VTRIP, V decreasing  
+25°C  
-60  
-10  
40  
90  
140  
0.00  
0.25  
0.50  
0.75  
1.00  
Temperature (°C)  
I
OL (mA)  
FIGURE 2-7:  
VTRIP and VHYST vs.  
FIGURE 2-10:  
V
OL vs. IOL (MCP111-195  
Temperature (MCP111-195).  
@ VDD = 1.7V).  
0.080  
MCP112-300  
DD = 2.7V  
3.040  
0.100  
0.098  
0.096  
0.094  
0.092  
0.090  
0.088  
0.086  
0.084  
0.082  
0.070  
0.060  
0.050  
0.040  
0.030  
0.020  
0.010  
0.000  
VTRIP, V increasing  
V
3.020  
3.000  
2.980  
2.960  
2.940  
2.920  
2.900  
VHYS, Hysteresis  
+125°C  
+85°C  
MCP112-300  
-40°C  
+25°C  
VTRIP, V decreasing  
0.00  
0.25  
0.50  
OL (mA)  
0.75  
1.00  
-60  
-10  
40  
90  
140  
I
Temperature (°C)  
FIGURE 2-8:  
VTRIP and VHYST vs.  
FIGURE 2-11:  
VOL vs. IOL (MCP112-300  
Temperature (MCP112-300).  
@ VDD = 2.7V).  
0.050  
4.800  
0.180  
0.170  
0.160  
0.150  
0.140  
0.130  
0.120  
0.110  
0.100  
MCP112-475  
VDD = 4.4V  
VTRIP, V increasing  
4.780  
4.760  
4.740  
4.720  
4.700  
4.680  
4.660  
4.640  
4.620  
4.600  
4.580  
0.040  
0.030  
0.020  
0.010  
0.000  
VHYS, Hysteresis  
MCP112-475  
+125°C  
+85°C  
-40°C  
+25°C  
VTRIP, V decreasing  
-60  
-20  
20  
60  
100  
140  
0.00  
0.25  
0.50  
0.75  
1.00  
IOL (mA)  
Temperature (°C)  
FIGURE 2-9:  
VTRIP and VHYST vs.  
FIGURE 2-12:  
VOL vs. IOL (MCP112-475  
Temperature (MCP112-475).  
@ VDD = 4.4V).  
DS21889A-page 6  
2004 Microchip Technology Inc.  
MCP111/112  
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k(only MCP111;  
see Figure 4-1), TA = -40°C to +125°C.  
0.120  
3.150  
3.100  
3.050  
3.000  
2.950  
2.900  
MCP111-195  
VDD = 1.7 V  
IOL = 1.00 mA  
MCP112-300  
VDD = 3.1V  
0.100  
0.080  
0.060  
0.040  
0.020  
0.000  
IOL = 0.75 mA  
IOL = 0.50 mA  
-40 °C  
+85 °C  
+25 °C  
IOL = 0.25 mA  
IOL = 0.00 mA  
80  
+125 °C  
-40  
0
40  
120  
0.00  
0.25  
0.50  
0.75  
1.00  
IOL (mA)  
Temperature (°C)  
FIGURE 2-13:  
VOL vs. Temperature  
FIGURE 2-16:  
VOH vs. IOH (MCP112-300  
(MCP111-195 @ VDD = 1.7V).  
@ VDD = 3.1V).  
0.080  
4.820  
4.800  
4.780  
4.760  
4.740  
4.720  
4.700  
MCP112-300  
VDD = 3.1V  
MCP112-300  
VDD = 2.7V  
IOL = 1.00 mA  
0.070  
0.060  
0.050  
0.040  
0.030  
0.020  
0.010  
0.000  
IOL = 0.75 mA  
IOL = 0.50 mA  
+25 °C  
-40 °C  
IOL = 0.25 mA  
IOL = 0.00 mA  
+85 °C  
+125 °C  
4.680  
0.00  
-40  
0
40  
80  
120  
0.25  
0.50  
0.75  
1.00  
Temperature (°C)  
IOL (mA)  
FIGURE 2-14:  
VOL vs. Temperature  
FIGURE 2-17:  
VOH vs. IOH (MCP112-475  
(MCP112-300 @ VDD = 2.7V).  
@ VDD = 4.8V).  
0.050  
600  
500  
400  
IOL = 1.00 mA  
MCP112-475  
VDD = 4.4V  
0.040  
MCP111-195  
IOL = 0.75 mA  
IOL = 0.50 mA  
MCP112-300  
0.030  
0.020  
0.010  
0.000  
300  
200  
100  
0
MCP112-475  
IOL = 0.25 mA  
IOL = 0.00 mA  
0.001  
0.01  
0.1  
1
10  
-40  
0
40  
80  
120  
Temperature (°C)  
VTRIP(min) - VDD  
FIGURE 2-15:  
VOL vs. Temperature  
FIGURE 2-18:  
Typical Transient Response  
(MCP112-475 @ VDD = 4.4V).  
(25 °C).  
2004 Microchip Technology Inc.  
DS21889A-page 7  
MCP111/112  
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k(only MCP111;  
see Figure 4-1), TA = -40°C to +125°C.  
400  
350  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
MCP111-195  
MCP111-195  
VDD decreasing from:  
5V - 1.7V  
VDD increasing from:  
0V - 2.1V  
VDD decreasing from:  
TRIP(max) + 0.25V to VTRIP(min) - 0.25V  
V
VDD increasing from:  
0V - 2.8V  
VDD increasing  
from: 0V - 4.0V  
VDD decreasing from:  
5V - 0V  
VDD increasing  
from: 0V - 5.5V  
0
0
-40  
-15  
10  
35  
60  
85  
110  
-40  
-15  
10  
35  
60  
85  
110  
Temperature (°C)  
Temperature (°C)  
FIGURE 2-19:  
tRPD vs. Temperature  
FIGURE 2-22:  
tRPU vs. Temperature  
(MCP111-195).  
(MCP111-195).  
140  
120  
100  
80  
160  
MCP112-300  
MCP112-300  
VDD decreasing from:  
VDD increasing from:  
0V - 3.1V  
140  
120  
100  
80  
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V  
VDD increasing from:  
0V - 3.3V  
VDD decreasing from:  
5V - 2.7V  
VDD increasing from:  
0V - 4.0V  
60  
60  
40  
40  
VDD decreasing from:  
5V - 0V  
20  
20  
VDD increasing from:  
0V - 5.5V  
0
0
-40  
-15  
10  
35  
60  
85  
110  
-40  
-15  
10  
35  
60  
85  
110  
Temperature (°C)  
Temperature (°C)  
FIGURE 2-20:  
tRPD vs. Temperature  
FIGURE 2-23:  
tRPU vs. Temperature  
(MCP112-300).  
(MCP112-300).  
250  
250  
200  
150  
100  
50  
MCP112-475  
MCP112-475  
VDD decreasing from:  
5V - 4.4V  
VDD increasing from:  
0V - 4.9V  
200  
150  
100  
50  
VDD increasing from:  
0V - 5.0V  
VDD decreasing from:  
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V  
VDD increasing from:  
0V - 5.5V  
VDD decreasing from:  
5V - 0V  
0
0
-40  
-15  
10  
35  
60  
85  
110  
-40  
-15  
10  
35  
60  
85  
110  
Temperature (°C)  
Temperature (°C)  
FIGURE 2-21:  
tRPD vs. Temperature  
FIGURE 2-24:  
tRPU vs. Temperature  
(MCP112-475).  
(MCP112-475).  
DS21889A-page 8  
2004 Microchip Technology Inc.  
MCP111/112  
Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k(only MCP111;  
see Figure 4-1), TA = -40°C to +125°C.  
0.1500  
0.1400  
0.1300  
0.1200  
0.1100  
0.1000  
0.0900  
0.0800  
60  
55  
MCP112-475  
MCP111-195  
VDD increasing from:  
50  
VDD increasing from:  
0V - 2.1V  
45  
0V - 5.0V  
VDD increasing from:  
0V - 4.9V  
VDD increasing from:  
0V - 5.5V  
VDD increasing  
from: 0V - 4.0V  
40  
35  
30  
VDD increasing from:  
0V - 5.5V  
VDD increasing from:  
VDD increasing from:  
0V - 4.8V  
25  
20  
0V - 2.8V  
-40  
-15  
10  
35  
60  
85  
110  
-40  
-15  
10  
35  
60  
85  
110  
Temperature (°C)  
Temperature (°C)  
FIGURE 2-25:  
tRT vs. Temperature  
FIGURE 2-27:  
tRT vs. Temperature  
(MCP111-195).  
(MCP112-475).  
0.4  
VDD increasing from:  
0V - 3.1V  
VDD increasing from:  
0.35  
0V - 3.3V  
0.3  
0.25  
0.2  
VDD increasing from:  
0V - 5.5V  
0.15  
0.1  
VDD increasing from:  
0V - 4.0V  
0.05  
0
MCP112-300  
35  
-40  
-15  
10  
60  
85  
110  
Temperature (°C)  
FIGURE 2-26:  
tRT vs. Temperature  
(MCP112-300).  
2004 Microchip Technology Inc.  
DS21889A-page 9  
MCP111/112  
3.0  
PIN DESCRIPTION  
The descriptions of the pins are listed in Table 3-1.  
TABLE 3-1:  
Pin No.  
PIN FUNCTION TABLE  
Symbol  
Function  
SOT23-3  
T0-92  
SC-70  
1
1
VOUT  
Output State  
DD Falling:  
V
H = VDD > VTRIP  
L = VDD < VTRIP  
VDD Rising:  
H = VDD > VTRIP + VHYS  
L = VDD < VTRIP + VHYS  
2
3
3
2
VSS  
VDD  
Ground reference  
Positive power supply  
DS21889A-page 10  
2004 Microchip Technology Inc.  
MCP111/112  
4.1  
VTRIP Operation  
4.0  
APPLICATION INFORMATION  
The voltage trip point (VTRIP) is determined on the falling  
edge of VDD. The actual voltage trip point (VTRIPAC) will  
be between the minimum trip point (VTRIPMIN) and the  
maximum trip point (VTRIPMAX). There is a hysteresis on  
this trip point to remove any “jitter” that would occur on  
the VOUT pin when the device VDD is at the trip point.  
For many of today’s microcontroller applications, care  
must be taken to prevent low power conditions that can  
cause many different system problems. The most  
common causes are brown-out conditions, where the  
system supply drops below the operating level momen-  
tarily. The second most common cause is when a slowly  
decaying power supply causes the microcontroller to  
begin executing instructions without sufficient voltage to  
sustain SRAM, thus producing indeterminate results.  
Figure 4-1 shows a typical application circuit.  
Figure 4-2 shows the state of the VOUT pin as deter-  
mined by the VDD voltage. The VTRIP specification is for  
falling VDD voltages. When the VDD voltage is rising, the  
VOUT will not be driven high until VDD is at VTRIP + VHYS  
.
VDD  
3
VDD  
VDD  
PICmicro®  
Microcontroller  
0.1  
µF  
RPU  
MCP11X  
RESET  
INPUT  
1
VOUT  
(Active-Low)  
VSS  
2
GND  
Note 1: RPU may be required with the MCP111  
due to the open-drain output. Resistor  
RPU is not required with the MCP112.  
FIGURE 4-1:  
Typical Application Circuit.  
VDD  
VTRIPAC + VHYSAC  
VTRIPMAX  
VTRIPMIN  
VTRIPAC  
VTRIPAC  
1V  
VOUT  
< 1 V is outside the  
device specifications  
FIGURE 4-2:  
VOUT Operation as Determined by the VTRIP and VHYS.  
2004 Microchip Technology Inc.  
DS21889A-page 11  
MCP111/112  
4.2  
Negative Going VDD Transients  
4.3  
Effect of Temperature on Time-out  
Period (t  
)
RPU  
The minimum pulse width (time) required to cause a  
reset may be an important criteria in the implementa-  
tion of a POR circuit. This time is referred to as  
transient duration and is the amount of time needed for  
these supervisory devices to respond to a drop in VDD  
The transient duration time is dependant on the magni-  
tude of VTRIP – VDD. Generally speaking, the transient  
The time-out period (tRPU) determines how long the  
device remains in the reset condition. This is affected  
by both VDD and temperature. The graph shown in  
Figures 2-22, 2-23 and 2-24 show typical response for  
different VDD values and temperatures.  
.
duration decreases with increases in VTRIP – VDD  
.
Figure 4-3 shows a typical transient duration vs. reset  
comparator overdrive for which the MCP111/112 will  
not generate a reset pulse. It shows that the farther  
below the trip point the transient pulse goes, the dura-  
tion of the pulse required to cause a reset gets shorter.  
Figure 2-18 shows the transient response characteris-  
tics for the MCP111/112.  
A 0.1 µF bypass cap mounted as close as possible to  
the VDD pin provides additional transient immunity  
(refer to Figure 4-1).  
5V  
V
V
TRIP(MAX)  
TRIP(MIN)  
V
- V  
DD  
TRIP(MIN)  
t
TRANS  
0V  
Time (µs)  
FIGURE 4-3:  
Example of Typical  
Transient Duration Waveform.  
DS21889A-page 12  
2004 Microchip Technology Inc.  
MCP111/112  
5.0  
5.1  
PACKAGING INFORMATION  
Package Marking Information  
3-Lead TO-92  
Example:  
XXXXXX  
XXXXXX  
XXXXXX  
YWWNNN  
MCP111  
290I  
TO0405  
256  
3-Pin SOT-23B  
3-Pin SC-70  
c d e  
f g h  
cdef  
Bottom Side  
Top Side  
Part Number  
MCP111T-195I/LB  
SOT-23  
SC-70  
Part Number  
SOT-23  
SC-70  
MPNN  
MQNN  
MGNN  
MHNN  
MJNN  
MKNN  
MLNN  
MMNN  
MCP112T-195E/LB  
MCP112T-240E/LB  
MCP112T-270E/LB  
MCP112T-290E/LB  
MCP112T-300E/LB  
MCP112T-315E/LB  
MCP112T-450E/LB  
MCP112T-475E/LB  
MCP112T-195I/TT  
MCP112T-240ETT  
MCP112T-270E/TT  
MCP112T-290E/TT  
MCP112T-300E/TT  
MCP112T-315E/TT  
MCP112T-450E/TT  
MCP112T-475E/TT  
NN  
MCP111T-240E/LB  
MCP111T-270E/LB  
MCP111T-290E/LB  
MCP111T-300E/LB  
MCP111T-315E/LB  
MCP111T-450E/LB  
MCP111T-475E/LB  
MCP111T-195I/TT  
MCP111T-240ETT  
MCP111T-270E/TT  
MCP111T-290E/TT  
MCP111T-300E/TT  
MCP111T-315E/TT  
MCP111T-450E/TT  
MCP111T-475E/TT  
MSNN  
MANN  
MBNN  
MCNN  
MDNN  
MENN  
MFNN  
EPN  
EQN  
EGN  
EHN  
EJN  
ERN  
ESN  
EAN  
EBN  
ECN  
EDN  
EEN  
EFN  
EKN  
ELN  
EMN  
Legend:  
1
2
3
4
5
6
Part Number + temperature range and voltage (two-digit code)  
Part Number + temperature range and voltage (two-digit code)  
Lot ID number  
Year and work week  
Year and work week  
Year and work week  
Note:  
In the event the full Microchip part number cannot be marked on one line, it will be  
carried over to the next line thus limiting the number of available characters for customer  
specific information.  
2004 Microchip Technology Inc.  
DS21889A-page 13  
MCP111/112  
3-Lead Plastic Small Outline Transistor (NB) (SOT-23)  
E
E1  
2
B
p1  
D
n
p
1
α
c
A
A2  
A1  
φ
β
L
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
3
MAX  
n
p
Number of Pins  
3
Pitch  
.038  
.076  
.040  
.037  
.002  
.093  
.051  
.115  
.018  
5
0.96  
1.92  
p1  
Outside lead pitch (basic)  
Overall Height  
A
A2  
A1  
E
.035  
.044  
0.89  
0.88  
1.01  
0.95  
0.06  
2.37  
1.30  
2.92  
0.45  
5
1.12  
1.02  
0.10  
2.64  
1.40  
3.04  
0.55  
10  
Molded Package Thickness  
.035  
.000  
.083  
.047  
.110  
.014  
0
.040  
.004  
.104  
.055  
.120  
.022  
10  
Standoff  
§
0.01  
2.10  
1.20  
2.80  
0.35  
0
Overall Width  
Molded Package Width  
Overall Length  
E1  
D
Foot Length  
L
φ
Foot Angle  
c
Lead Thickness  
Lead Width  
.004  
.015  
0
.006  
.017  
5
.007  
.020  
10  
0.09  
0.37  
0
0.14  
0.44  
5
0.18  
0.51  
10  
B
α
β
Mold Draft Angle Top  
Mold Draft Angle Bottom  
0
5
10  
0
5
10  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: TO-236  
Drawing No. C04-104  
DS21889A-page 14  
2004 Microchip Technology Inc.  
MCP111/112  
3-Lead Plastic Small Outline Transistor (LB) (SC-70)  
E
E1  
B
2
1
p1  
D
3
p
a
A2  
A
c
A1  
b
L
Units  
Dimension Limits  
INCHES  
3
MILLIMETERS*  
MIN MAX  
MIN  
MAX  
Number of Pins  
Pitch  
3
p
.026 BSC.  
.051 BSC.  
.031  
.031  
.000  
.071  
.045  
.071  
.004  
.003  
.006  
8°  
0.65 BSC.  
1.30 BSC.  
0.80  
p1  
Outside lead pitch (basic)  
Overall Height  
A
A2  
A1  
E
.043  
1.10  
Molded Package Thickness  
Standoff  
.039  
.0004  
.094  
.053  
.089  
.016  
.010  
.016  
12°  
0.80  
1.00  
.010  
2.40  
1.35  
2.25  
0.41  
0.25  
0.40  
12°  
0.00  
Overall Width  
1.80  
Molded Package Width  
Overall Length  
E1  
D
1.15  
1.80  
Foot Length  
L
c
0.10  
Lead Thickness  
0.08  
Lead Width  
B
a
0.15  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
8°  
b
8°  
12°  
8°  
12°  
*Controlling Parameter  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions  
shall not exceed .005" (0.127mm) per side.  
JEITA (EIAJ) Equivalent: SC70  
Drawing No. C04-104  
2004 Microchip Technology Inc.  
DS21889A-page 15  
MCP111/112  
3-Lead Plastic Transistor Outline (TO) (TO-92)  
E1  
D
n
1
L
1
2
3
α
B
p
c
A
R
β
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
3
MAX  
n
p
Number of Pins  
3
Pitch  
.050  
.143  
.186  
.183  
.090  
.555  
.017  
.019  
5
1.27  
Bottom to Package Flat  
Overall Width  
A
E1  
D
R
L
.130  
.155  
.195  
.195  
.095  
.610  
.020  
.022  
6
3.30  
4.45  
3.62  
4.71  
4.64  
2.29  
14.10  
0.43  
0.48  
5
3.94  
.175  
.170  
.085  
.500  
.014  
.016  
4
4.95  
4.95  
2.41  
15.49  
0.51  
0.56  
6
Overall Length  
4.32  
2.16  
12.70  
0.36  
0.41  
4
Molded Package Radius  
Tip to Seating Plane  
Lead Thickness  
Lead Width  
c
B
α
Mold Draft Angle Top  
Mold Draft Angle Bottom  
β
2
3
4
2
3
4
*Controlling Parameter  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: TO-92  
Drawing No. C04-101  
DS21889A-page 16  
2004 Microchip Technology Inc.  
MCP111/112  
5.2  
Product Tape and Reel Specifications  
EMBOSSED CARRIER DIMENSIONS (8, 12, 16 AND 24 MM TAPE ONLY)  
FIGURE 5-1:  
Top  
Cover  
Tape  
A
0
W
B
K
0
0
P
TABLE 1:  
CARRIER TAPE/CAVITY DIMENSIONS  
Carrier  
Cavity  
Dimensions  
Output  
Quantity  
Units  
Reel  
Diameter in  
mm  
Dimensions  
Case  
Package  
Outline  
Type  
W
P
A0  
B0  
mm  
K0  
mm  
mm  
mm  
mm  
NB  
LB  
SOT-23  
SC-70  
3L  
3L  
8
8
4
4
3.15  
2.4  
2.77  
2.4  
1.22  
1.19  
3000  
3000  
180  
180  
FIGURE 5-2:  
3-LEAD SOT-23/SC70 DEVICE TAPE AND REEL SPECIFICATIONS  
g n i k M a r  
e c D e v i  
User Direction of Feed  
Device  
Marking  
W, Width  
of Carrier  
Tape  
Pin 1  
Pin 1  
P, Pitch  
Reverse Reel Component Orientation  
Standard Reel Component Orientation  
2004 Microchip Technology Inc.  
DS21889A-page 17  
MCP111/112  
FIGURE 5-3:  
TO-92 DEVICES  
P, Pitch  
Device  
Marking  
3 LEAD  
TO-92  
W, Width of  
Carrier Tape  
Device  
Marking  
2 LEAD  
TO-92  
W, Width of  
Carrier Tape  
Reverse Reel  
Component Orientation  
Standard Reel  
Component Orientation  
H1  
W6  
H
H0  
D
F1  
F
F2  
P1  
P2  
DS21889A-page 18  
2004 Microchip Technology Inc.  
MCP111/112  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
Examples:  
PART NO.  
X
XXX  
X
XX  
a)  
MCP111T-195I/NB: SOT-23B-3,  
Device  
Temperature Package  
Range  
Tape/Reel  
Option  
Monitoring  
Options  
Tape and Reel,  
1.95V MicroPower  
Voltage Detector,  
open-drain,  
-40°C to +85°C.  
MCP111T-315E/LB: SC-70-3, Tape and Reel,  
3.15V MicroPower  
Device:  
MCP111: MicroPower Voltage Detector, open-drain  
MCP111T: MicroPower Voltage Detector, open-drain  
(Tape and Reel)  
MCP112: MicroPower Voltage Detector, push-pull  
MCP112T: MicroPower Voltage Detector, push-pull  
(Tape and Reel)  
b)  
c)  
Voltage Detector,  
open-drain,  
-40°C to +125°C.  
MCP111-300E/TO: TO-92-3, 3.00V  
MicroPower Voltage  
Detector,  
Monitoring Options:  
195 = 1.90V  
240 = 2.32V  
270 = 2.63V  
290 = 2.90V  
300 = 2.93V  
315 = 3.08V  
450 = 4.38V  
475 = 4.63V  
open-drain,  
-40°C to +85°C.  
a)  
b)  
c)  
MCP112T-290E/NB: SOT-23B-3,  
Tape and Reel,  
2.90V MicroPower  
Voltage Detector,  
push-pull, -40°C to +85°C.  
MCP112T-475E/LB: SC-70-3, Tape and Reel,  
4.75V MicroPower  
Temperature Range:  
Package:  
I
E
=
=
-40°C to +85°C (MCP11X-195 only)  
-40°C to +125°C (Except MCP11X-195 only)  
Voltage Detector,  
push-pull,  
-40°C to +125°C.  
NB  
LB  
TO  
=
=
=
SOT-23B, 3-lead  
SC-70, 3-lead  
TO-92, 3-lead  
MCP112-450E/TO: TO-92-3,  
4.5V MicroPower Voltage  
Detector, push-pull,  
-40°C to +85°C.  
Sales and Support  
Data Sheets  
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and  
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:  
1. Your local Microchip sales office  
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277  
3. The Microchip Worldwide Site (www.microchip.com)  
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.  
Customer Notification System  
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  
2004 Microchip Technology Inc.  
DS21889A-page 19  
MCP111/112  
NOTES:  
DS21889A-page 20  
2004 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is intended through suggestion only  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
No representation or warranty is given and no liability is  
assumed by Microchip Technology Incorporated with respect  
to the accuracy or use of such information, or infringement of  
patents or other intellectual property rights arising from such  
use or otherwise. Use of Microchip’s products as critical  
components in life support systems is not authorized except  
with express written approval by Microchip. No licenses are  
conveyed, implicitly or otherwise, under any intellectual  
property rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, Accuron,  
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,  
PICSTART, PRO MATE, PowerSmart, rfPIC, and  
SmartShunt are registered trademarks of Microchip  
Technology Incorporated in the U.S.A. and other countries.  
AmpLab, FilterLab, MXDEV, MXLAB, PICMASTER, SEEVAL,  
SmartSensor and The Embedded Control Solutions Company  
are registered trademarks of Microchip Technology  
Incorporated in the U.S.A.  
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,  
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,  
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial  
Programming, ICSP, ICEPIC, Migratable Memory, MPASM,  
MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,  
PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,  
PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial,  
SmartTel and Total Endurance are trademarks of Microchip  
Technology Incorporated in the U.S.A. and other countries.  
SQTP is a service mark of Microchip Technology Incorporated  
in the U.S.A.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2004, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
Microchip received ISO/TS-16949:2002 quality system certification for  
its worldwide headquarters, design and wafer fabrication facilities in  
Chandler and Tempe, Arizona and Mountain View, California in  
October 2003. The Company’s quality system processes and  
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
2004 Microchip Technology Inc.  
DS21889A-page 21  
WORLDWIDE SALES AND SERVICE  
China - Beijing  
Korea  
AMERICAS  
Corporate Office  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7200  
Fax: 480-792-7277  
Technical Support: 480-792-7627  
Web Address: www.microchip.com  
Unit 706B  
168-1, Youngbo Bldg. 3 Floor  
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Seoul, Korea 135-882  
Wan Tai Bei Hai Bldg.  
No. 6 Chaoyangmen Bei Str.  
Beijing, 100027, China  
Tel: 86-10-85282100  
Fax: 86-10-85282104  
Tel: 82-2-554-7200 Fax: 82-2-558-5932 or  
82-2-558-5934  
Singapore  
200 Middle Road  
#07-02 Prime Centre  
Singapore, 188980  
Tel: 65-6334-8870 Fax: 65-6334-8850  
China - Chengdu  
Rm. 2401-2402, 24th Floor,  
Ming Xing Financial Tower  
No. 88 TIDU Street  
Chengdu 610016, China  
Tel: 86-28-86766200  
Atlanta  
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Tel: 770-640-0034  
Fax: 770-640-0307  
Taiwan  
Kaohsiung Branch  
30F - 1 No. 8  
Fax: 86-28-86766599  
Boston  
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Kaohsiung 806, Taiwan  
Tel: 886-7-536-4818  
Fax: 886-7-536-4803  
China - Fuzhou  
Unit 28F, World Trade Plaza  
No. 71 Wusi Road  
Fuzhou 350001, China  
Tel: 86-591-7503506  
Fax: 86-591-7503521  
2 Lan Drive, Suite 120  
Westford, MA 01886  
Tel: 978-692-3848  
Fax: 978-692-3821  
Taiwan  
Taiwan Branch  
11F-3, No. 207  
Tung Hua North Road  
Taipei, 105, Taiwan  
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139  
Chicago  
333 Pierce Road, Suite 180  
Itasca, IL 60143  
Tel: 630-285-0071  
Fax: 630-285-0075  
China - Hong Kong SAR  
Unit 901-6, Tower 2, Metroplaza  
223 Hing Fong Road  
Kwai Fong, N.T., Hong Kong  
Tel: 852-2401-1200  
Fax: 852-2401-3431  
Dallas  
EUROPE  
Austria  
Durisolstrasse 2  
A-4600 Wels  
Austria  
Tel: 43-7242-2244-399  
Fax: 43-7242-2244-393  
Denmark  
Regus Business Centre  
Lautrup hoj 1-3  
4570 Westgrove Drive, Suite 160  
Addison, TX 75001  
Tel: 972-818-7423  
Fax: 972-818-2924  
China - Shanghai  
Room 701, Bldg. B  
Far East International Plaza  
No. 317 Xian Xia Road  
Shanghai, 200051  
Detroit  
Tri-Atria Office Building  
32255 Northwestern Highway, Suite 190  
Farmington Hills, MI 48334  
Tel: 248-538-2250  
Tel: 86-21-6275-5700  
Fax: 86-21-6275-5060  
China - Shenzhen  
Rm. 1812, 18/F, Building A, United Plaza  
No. 5022 Binhe Road, Futian District  
Shenzhen 518033, China  
Tel: 86-755-82901380  
Fax: 86-755-8295-1393  
China - Shunde  
Fax: 248-538-2260  
Ballerup DK-2750 Denmark  
Tel: 45-4420-9895 Fax: 45-4420-9910  
Kokomo  
France  
2767 S. Albright Road  
Kokomo, IN 46902  
Tel: 765-864-8360  
Fax: 765-864-8387  
Parc d’Activite du Moulin de Massy  
43 Rue du Saule Trapu  
Batiment A - ler Etage  
91300 Massy, France  
Tel: 33-1-69-53-63-20  
Fax: 33-1-69-30-90-79  
Room 401, Hongjian Building, No. 2  
Los Angeles  
18201 Von Karman, Suite 1090  
Irvine, CA 92612  
Tel: 949-263-1888  
Fax: 949-263-1338  
Fengxiangnan Road, Ronggui Town, Shunde  
District, Foshan City, Guangdong 528303, China  
Tel: 86-757-28395507 Fax: 86-757-28395571  
Germany  
China - Qingdao  
Rm. B505A, Fullhope Plaza,  
No. 12 Hong Kong Central Rd.  
Qingdao 266071, China  
Tel: 86-532-5027355 Fax: 86-532-5027205  
Steinheilstrasse 10  
D-85737 Ismaning, Germany  
Tel: 49-89-627-144-0  
Fax: 49-89-627-144-44  
San Jose  
1300 Terra Bella Avenue  
Mountain View, CA 94043  
Tel: 650-215-1444  
Italy  
India  
Via Quasimodo, 12  
20025 Legnano (MI)  
Milan, Italy  
Divyasree Chambers  
1 Floor, Wing A (A3/A4)  
No. 11, O’Shaugnessey Road  
Bangalore, 560 025, India  
Tel: 91-80-22290061 Fax: 91-80-22290062  
Japan  
Fax: 650-961-0286  
Toronto  
Tel: 39-0331-742611  
Fax: 39-0331-466781  
Netherlands  
Waegenburghtplein 4  
NL-5152 JR, Drunen, Netherlands  
Tel: 31-416-690399  
6285 Northam Drive, Suite 108  
Mississauga, Ontario L4V 1X5, Canada  
Tel: 905-673-0699  
Fax: 905-673-6509  
Benex S-1 6F  
3-18-20, Shinyokohama  
Kohoku-Ku, Yokohama-shi  
Kanagawa, 222-0033, Japan  
Tel: 81-45-471- 6166 Fax: 81-45-471-6122  
ASIA/PACIFIC  
Australia  
Suite 22, 41 Rawson Street  
Epping 2121, NSW  
Australia  
Tel: 61-2-9868-6733  
Fax: 61-2-9868-6755  
Fax: 31-416-690340  
United Kingdom  
505 Eskdale Road  
Winnersh Triangle  
Wokingham  
Berkshire, England RG41 5TU  
Tel: 44-118-921-5869  
Fax: 44-118-921-5820  
05/28/04  
DS21889A-page 22  
2004 Microchip Technology Inc.  

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