MCP1407T-E/PA [MICROCHIP]
6A High-Speed Power MOSFET Drivers; 6A高速功率MOSFET驱动器
| 型号： | MCP1407T-E/PA |
| 厂家： | 
MICROCHIP |
| 描述： | 6A High-Speed Power MOSFET Drivers |
| 文件： | 总22页 (文件大小：889K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCP1406/07
6A High-Speed Power MOSFET Drivers
Features
General Description
• High Peak Output Current: 6.0A (typ.)
The MCP1406/07 devices are
a
family of
buffers/MOSFET drivers that feature a single-output
with 6A peak drive current capability, low shoot-through
current, matched rise/fall times and propagation delay
times. These devices are pin-compatible and are
improved versions of the TC4420/TC4429 MOSFET
drivers.
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2500 pF in 20 ns
The MCP1406/07 MOSFET drivers can easily charge
and discharge 2500 pF gate capacitance in under
20 ns, provide low enough impedances in both the on
and off states to ensure the MOSFETs intended state
will not be affected, even by large transients. The input
to the MCP1406/07 may be driven directly from either
TTL or CMOS (3V to 18V).
- 6800 pF in 40 ns
• Short Delay Times: 40 ns (typ.)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typ.)
- With Logic ‘0’ Input – 35 µA (typ.)
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin. All
terminals are fully protect against Electrostatic
Discharge (ESD) up to 4 kV.
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing Up To
5V
• Pin compatible with the TC4420/TC4429 devices
• Space-saving 8-Pin SOIC, PDIP and 8-Pin 6x5
DFN Packages
The MCP1406/07 single-output 6A MOSFET driver
family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
temperature rating, making it useful in any wide
temperature range application.
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
Package Types
5-Pin TO-220
Tab is
Common
to VDD
8-Pin PDIP/SOIC
8-Pin 6x5 DFN
VDD
INPUT
NC
1
2
3
VDD
8 VDD
VDD
INPUT
NC
VDD VDD
OUT
OUT
OUT
OUT
GND
7
6
OUT OUT
OUT OUT
GND GND
4
5
1
2
3
GND
GND
4
5
GND
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
© 2006 Microchip Technology Inc.
DS22019A-page 1
MCP1406/07
Functional Block Diagram(1)
VDD
Inverting
130 µA
300 mV
Output
Output
Non-inverting
Input
Effective
Input C = 25 pF
4.7V
MCP1406 Inverting
MCP1407 Non-inverting
GND
Note 1: Unused inputs should be grounded.
DS22019A-page 2
© 2006 Microchip Technology Inc.
MCP1406/07
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ...............................(VDD + 0.3V) to (GND – 5V)
Input Current (VIN>VDD)................................................50 mA
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
1.8
1.3
—
—
0.8
V
V
–10
-5
10
µA 0V ≤ VIN ≤ VDD
Input Voltage
VIN
—
VDD+0.3
V
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
VOH
VOL
ROH
ROL
IPK
VDD – 0.025
—
—
—
0.025
2.8
V
V
Ω
Ω
A
A
A
DC Test
—
—
—
—
1.3
—
DC Test
2.1
1.5
6
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
VDD = 18V (Note 2)
Note 2, Note 3
2.5
—
IDC
Latch-Up Protection With-
stand Reverse Current
IREV
1.5
—
Duty cycle ≤ 2%, t ≤ 300 µsec.
Switching Time (Note 1)
Rise Time
tR
tF
—
—
20
20
30
30
ns
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Fall Time
Figure 4-1, Figure 4-2
CL = 2500 pF
Delay Time
tD1
tD2
—
—
40
40
55
55
ns
ns
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
Delay Time
Power Supply
Supply Voltage
Power Supply Current
VDD
IS
4.5
—
—
130
35
18.0
250
100
V
µA VIN = 3V
µA VIN = 0V
IS
—
Note 1: Switching times ensured by design.
2: Tested during characterization, not production tested.
3: Valid for AT and MF packages only. TA = +25°C
© 2006 Microchip Technology Inc.
DS22019A-page 3
MCP1406/07
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘1’, High Input Voltage VIH
2.4
—
—
—
—
—
—
0.8
V
V
Logic ‘0’, Low Input Voltage
Input Current
VIL
IIN
–10
-5
+10
µA
V
0V ≤ VIN ≤ VDD
Input Voltage
VIN
VDD+0.3
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
VOH VDD – 0.025
—
—
—
0.025
5.0
V
V
Ω
Ω
DC TEST
VOL
ROH
ROL
—
—
—
DC TEST
3.0
2.3
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
5.0
tR
tF
—
—
25
25
40
40
ns
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Fall Time
Figure 4-1, Figure 4-2
CL = 2500 pF
Delay Time
tD1
tD2
—
—
50
50
65
65
ns
ns
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
Delay Time
Power Supply
Supply Voltage
Power Supply Current
VDD
IS
4.5
—
—
200
50
18.0
500
150
V
µA
VIN = 3V
—
VIN = 0V
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
TA
TJ
TA
–40
—
—
—
—
+125
+150
+150
°C
°C
°C
–65
θJA
—
33.2
—
°C/W Typical four-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
Thermal Resistance, 5L-TO-220
θJA
θJA
θJA
—
—
—
125
155
71
—
—
—
°C/W
°C/W
°C/W
DS22019A-page 4
© 2006 Microchip Technology Inc.
MCP1406/07
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
10,000 pF
10,000 pF
8,200 pF
8,200 pF
1,000 pF
4,700 pF
2,500 pF
4,700 pF
1,000 pF
2,500 pF
6,800 pF
6,800 pF
100 pF
100 pF
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-1:
Rise Time vs. Supply
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
Voltage.
80
70
60
50
40
30
70
60
50
40
30
20
10
5V
10V
10V
15V
5V
15V
20
10
0
0
100
1000
10000
100
1000
10000
Capacitive Load (pF)
Capacitive Load (pF)
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
Load.
30
85
VDD = 18V
VIN = 5V
tRISE
tD1
25
20
15
10
5
75
tFALL
65
tD2
55
45
0
35
4
6
8
10
12
14
16
18
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
Supply Voltage (V)
FIGURE 2-3:
Rise and Fall Times vs.
FIGURE 2-6:
Propagation Delay vs.
Temperature.
Supply Voltage.
© 2006 Microchip Technology Inc.
DS22019A-page 5
MCP1406/07
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
200
175
150
125
100
75
250
200
150
100
50
VDD = 12V
VDD = 18V
Input = High
Input = Low
tD1
50
tD2
0
25
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
2
3
4
5
6
7
8
9
10
Input Amplitude (V)
FIGURE 2-7:
Propagation Delay Time vs.
FIGURE 2-10:
Quiescent Current vs.
Input Amplitude.
Temperature.
55
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
VDD = 18V
VIN = 5V
50
VHI
45
40
35
tD2
VLO
tD1
30
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-8:
Propagation Delay Time vs.
FIGURE 2-11:
Input Threshold vs. Supply
Temperature.
Voltage.
2
180
160
140
120
100
80
VDD = 12V
VHI
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
INPUT = 1
VLO
60
40
INPUT = 0
20
0
4
6
8
10
12
14
16
18
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (oC)
Supply Voltage (V)
FIGURE 2-9:
Quiescent Current vs.
FIGURE 2-12:
Input Threshold vs.
Supply Voltage.
Temperature.
DS22019A-page 6
© 2006 Microchip Technology Inc.
MCP1406/07
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
150
125
100
75
120
100
80
60
40
20
0
VDD = 18V
VDD = 18V
10,000 pF
1 MHz
6,800 pF
1,000 pF
50 kHz
100 kHz
2,500 pF
200 kHz
50
500 kHz
4,700 pF
25
100 pF
0
10
100
1000
100
1000
Capacitive Load (pF)
10000
Frequency (kHz)
FIGURE 2-13:
Supply Current vs.
FIGURE 2-16:
Supply Current vs.
Capacitive Load.
Frequency.
150
80
VDD = 12V
VDD = 12V
70
10,000 pF
6,800 pF
2 MHz
1 MHz
125
100
75
60
50
40
30
20
10
1,000 pF
4,700 pF
50 kHz
100 kHz
200 kHz
50
25
0
500 kHz
2,500 pF
100 pF
0
10
100
1000
100
1000
10000
Frequency (kHz)
Capacitive Load (pF)
FIGURE 2-14:
Supply Current vs.
FIGURE 2-17:
Supply Current vs.
Capacitive Load.
Frequency.
100
90
40
VDD = 6V
35
10,000 pF
6,800 pF
2 MHz
VDD = 6V
80
70
60
50
40
100 kHz
30
25
20
15
10
5
1 MHz
4,700 pF
1,000 pF
50 kHz
200 kHz
30
500 kHz
2,500 pF
20
10
0
100 pF
0
100
1000
10000
10
100
1000
Capacitive Load (pF)
Frequency (kHz)
FIGURE 2-15:
Supply Current vs.
FIGURE 2-18:
Supply Current vs.
Capacitive Load.
Frequency.
© 2006 Microchip Technology Inc.
DS22019A-page 7
MCP1406/07
Typical Performance Curves (Continued)
Note: Unless otherwise indicated, TA = +25°C with 4.5V <= VDD <= 18V.
-8
10
7
6
5
4
3
2
1
VIN = 2.5V (MCP1407)
IN = 0V (MCP1406)
TJ = +125oC
V
-9
10
TJ = +25oC
-10
10
4
6
8
10
12
14
16
18
4
6
8
10
12
14
16
18
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-19:
Output Resistance (Output
FIGURE 2-21:
Crossover Energy vs.
High) vs. Supply Voltage.
Supply Voltage.
7
6
VIN = 0V (MCP1407)
IN = 2.5V (MCP1406)
V
5
TJ = +125oC
4
3
TJ = +25oC
2
1
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-20:
Output Resistance (Output
Low) vs. Supply Voltage.
DS22019A-page 8
© 2006 Microchip Technology Inc.
MCP1406/07
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
(1)
TABLE 3-1:
PIN FUNCTION TABLE
8-Pin
PDIP, SOIC
8-Pin
DFN
5-Pin
TO-220
Symbol
Description
1
2
1
2
—
1
VDD
INPUT
NC
Supply Input
Control Input
3
3
—
2
No Connection
Ground
4
4
GND
5
5
4
GND
Ground
6
6
5
OUTPUT
OUTPUT
VDD
CMOS Push-Pull Output
CMOS Push-Pull Output
Supply Input
7
7
—
3
8
8
—
—
PAD
—
—
TAB
NC
Exposed Metal Pad
VDD
Metal Tab at V Potential
DD
Note 1: Duplicate pins must be connected for proper operation.
3.1
Supply Input (VDD
)
3.5
Exposed Metal Pad
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with local capacitors. The
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
bypass capacitors provide
a
localized low-
impedance path for the peak currents that are to be
provided to the load.
3.6
TO-220 Metal Tab
3.2
Control Input (INPUT)
The metal tab on the TO-220 package is at VDD
potentail. This metal tab is not intended to be the VDD
connection to MCP1406/07. VDD should be supplied
using the Supply Input pin of the TO-220.
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has
hysteresis between the high and low input levels,
allowing them to be driven from slow rising and falling
signals, and to provide noise immunity.
3.3
Ground (GND)
Ground is the device return pin. The ground pin should
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.4
CMOS Push-Pull Output
(OUTPUT)
The output is a CMOS push-pull output that is capable
of sourcing peak currents of 6A (VDD = 18V). The low
output impedance ensures the gate of the external
MOSFET will stay in the intended state even during
large transients. These output also has a reverse
current latch-up rating of 1.5A.
© 2006 Microchip Technology Inc.
DS22019A-page 9
MCP1406/07
4.0
4.1
APPLICATION INFORMATION
General Information
VDD = 18V
1 µF
MOSFET drivers are high-speed, high current devices
which are intended to provide high peak currents to
charge the gate capacitance of external MOSFETs or
IGBTs. In high frequency switching power supplies, the
PWM controller may not have the drive capability to
directly drive the power MOSFET. A MOSFET driver
like the MCP1406/07 family can be used to provide
additional drive current capability.
0.1 µF
Ceramic
Input
Output
CL = 2500 pF
MCP1407
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully
off state to a fully on state are characterized by the
drivers rise time (tR), fall time (tF), and propagation
delays (tD1 and tD2). The MCP1406/07 family of
devices is able to make this transition very quickly.
Figure 4-1 and Figure 4-2 show the test circuits and
timing waveforms used to verify the MCP1406/07 tim-
ing.
+5V
90%
Input
10%
0V
18V
90%
90%
tD1
tD2
tF
tR
Output
0V
10%
10%
VDD = 18V
0.1 µF
1 µF
FIGURE 4-2:
Waveform.
Non-Inverting Driver Timing
Ceramic
Input
Output
4.3
Decoupling Capacitors
CL = 2500 pF
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.25A are
needed to charge a 2500 pF load with 18V in 20 ns.
MCP1406
+5V
90%
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and low
ESR film capacitor are recommended to be placed in
parallel between the driver VDD and GND. A 1.0 µF low
ESR film capacitor and a 0.1 µF ceramic capacitor
placed between pins 1, 8 and 4, 5 should be used.
These capacitors should be placed close to the driver
to minimized circuit board parasitics and provide a local
source for the required current.
Input
0V
10%
tD1
90%
10%
tD2
tF
tR
18V
90%
Output
10%
0V
FIGURE 4-1:
Waveform.
Inverting Driver Timing
4.4
PCB Layout Considerations
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation and
robustness of design. PCB trace loop area and
inductance should be minimized by the use of a ground
plane or ground trace located under the MOSFET gate
drive signals, separate analog and power grounds, and
local driver decoupling.
DS22019A-page 10
© 2006 Microchip Technology Inc.
MCP1406/07
The MCP1406/07 devices have two pins each for VDD
,
4.5.2
QUIESCENT POWER DISSIPATION
OUTPUT, and GND. Both pins must be used for proper
operation. This also lowers path inductance which will,
along with proper decoupling, help minimize ringing in
the circuit.
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1406/07 devices have a quiescent current
draw when the input is high of 0.13 mA (typ) and
0.035 mA (typ) when the input is low. The quiescent
power dissipation is:
Placing a ground plane beneath the MCP1406/07 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
PQ = (IQH × D + IQL × (1 – D)) × VDD
4.5
Power Dissipation
Where:
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
IQH = Quiescent current in the high state
D = Duty cycle
IQL = Quiescent current in the low state
VDD = MOSFET driver supply voltage
PT = PL + PQ + PCC
Where:
4.5.3
OPERATING POWER DISSIPATION
PT = Total power dissipation
PL = Load power dissipation
PQ = Quiescent power dissipation
PCC = Operating power dissipation
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
4.5.1
CAPACITIVE LOAD DISSIPATION
PCC = CC × f × VDD
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
Where:
CC = Cross-conduction constant (A*sec)
f = Switching frequency
VDD = MOSFET driver supply voltage
2
PL = f × CT × VDD
Where:
f = Switching frequency
CT = Total load capacitance
VDD = MOSFET driver supply voltage
© 2006 Microchip Technology Inc.
DS22019A-page 11
MCP1406/07
5.0
5.1
PACKAGING INFORMATION
Package Marking Information (Not to Scale)
5-Lead TO-220
Example
MCP1406
XXXXXXXXX
XXXXXXXXX
YYWWNNN
e
3
EAT^^
0644256
8-Lead DFN
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
MCP1406
e
3
E/MF^
0644
256
8-Lead PDIP (300 mil)
Example:
MCP1407
XXXXXXXX
XXXXXNNN
e
3
E/P^^256
0644
YYWW
8-Lead SOIC (150 mil)
Example:
MCP1406E
XXXXXXXX
XXXXYYWW
NNN
SN^
e
3
0644
256
Legend: XX...X Customer-specific information
Y
YY
WW
NNN
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
)
e3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
DS22019A-page 12
© 2006 Microchip Technology Inc.
MCP1406/07
5-Lead Plastic Transistor Outline (AT) (TO-220)
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
L
H1
Q
β
e3
e1
E
e
EJECTOR PIN
ØP
(5°)
α
C1
A
J1
F
D
Units
e
INCHES
MIN
.060
.263
.030
.160
.385
.560
.234
.045
.103
.146
.540
.090
.014
.025
3°
*
MILLIMETERS
MIN
Dimension Limits
MAX
.072
.273
.040
.190
.415
.590
.258
.055
.113
.156
.560
.115
.022
.040
7°
MAX
1.83
6.93
1.02
4.83
10.54
14.99
6.55
1.40
2.87
3.96
14.22
2.92
0.56
1.02
7°
Lead Pitch
1.52
Overall Lead Centers
Space Between Leads
Overall Height
e1
e3
A
6.68
0.76
4.06
Overall Width
E
9.78
Overall Length
D
14.22
5.94
Flag Length
H1
F
Flag Thickness
Through Hole Center
Through Hole Diameter
Lead Length
1.14
Q
P
2.62
3.71
L
J1
C1
β
13.72
2.29
Base to Bottom of Lead
Lead Thickness
Lead Width
0.36
0.64
α
Mold Draft Angle
3°
*
Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254 mm) per side.
JEDEC equivalent: TO-220
Drawing No. C04-036
Revised 08-01-05
© 2006 Microchip Technology Inc.
DS22019A-page 13
MCP1406/07
8-Lead Plastic Dual Flat, No Lead Package (MF) - 6x5 mm Body [DFN-S]
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
e
D
L
b
N
N
K
E2
E
EXPOSED PAD
NOTE 1
NOTE 1
1
2
2
1
D2
TOP VIEW
BOTTOM VIEW
A
A3
A1
NOTE 2
Units
Dimension Limits
MILLIMETERS
NOM
8
MIN
MAX
Number of Pins
Pitch
N
e
1.27 BSC
0.85
Overall Height
Standoff
A
1.00
0.05
0.80
0.00
0.01
A1
0.20 REF
5.00 BSC
6.00 BSC
4.00
Contact Thickness
Overall Length
A3
D
Overall Width
E
Exposed Pad Length
Exposed Pad Width
Contact Width
D2
E2
b
4.10
2.40
0.48
0.75
—
3.90
2.20
0.35
0.50
0.20
2.30
0.40
0.60
Contact Length §
Contact-to-Exposed Pad §
L
—
K
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. § Significant Characteristic
4. Package is saw singulated
5. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing No. C04–122, Sept. 8, 2006
DS22019A-page 14
© 2006 Microchip Technology Inc.
MCP1406/07
8-Lead Plastic Dual In-line (PA) – 300 mil Body (PDIP)
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
B
p
eB
Units
INCHES*
NOM
8
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
.100
2.54
Top to Seating Plane
A
.140
.155
.130
.170
3.56
2.92
3.94
3.30
4.32
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
A2
A1
E
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
.145
3.68
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
E1
D
Tip to Seating Plane
Lead Thickness
L
c
Upper Lead Width
B1
B
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
§
eB
α
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
© 2006 Microchip Technology Inc.
DS22019A-page 15
MCP1406/07
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil Body (SOIC)
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
A1
Units
INCHES*
MILLIMETERS
Dimension Limits
MIN
NOM
8
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
.050
1.27
Overall Height
A
.053
.061
.056
.007
.237
.154
.193
.015
.025
4
.069
1.35
1.32
1.55
1.42
0.18
6.02
3.91
4.90
0.38
0.62
4
1.75
Molded Package Thickness
Standoff
A2
A1
E
.052
.004
.228
.146
.189
.010
.019
0
.061
.010
.244
.157
.197
.020
.030
8
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
§
0.10
5.79
3.71
4.80
0.25
0.48
0
Overall Width
Molded Package Width
Overall Length
E1
D
Chamfer Distance
Foot Length
h
L
φ
Foot Angle
c
Lead Thickness
Lead Width
.008
.013
0
.009
.017
12
.010
.020
15
0.20
0.33
0
0.23
0.42
12
0.25
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
Notes:
0
12
15
0
12
15
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
DS22019A-page 16
© 2006 Microchip Technology Inc.
MCP1406/07
APPENDIX A: REVISION HISTORY
Revision A (December 2006)
• Original Release of this Document.
© 2006 Microchip Technology Inc.
DS22019A-page 17
MCP1406/07
NOTES:
DS22019A-page 18
© 2006 Microchip Technology Inc.
MCP1406/07
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
XX
XXX
Examples:
a) MCP1406-E/MF: 6A High-Speed MOSFET
Driver, Inverting
Temperature Package Tape & Reel
Range
8LD DFN package.
b) MCP1406-E/AT: 6A High-Speed MOSFET
Driver, Inverting
Device:
MCP1406: 6A High-Speed MOSFET Driver, Inverting
MCP1406T: 6A High-Speed MOSFET Driver, Inverting
(Tape and Reel)
MCP1407: 6A High-Speed MOSFET Driver,
Non-Inverting
5LD TO-220 package.
c) MCP1406-E/SN: 6A High-Speed MOSFET
Driver, Inverting
8LD SOIC package.
MCP1407T: 6A High-Speed MOSFET Driver,
Non-Inverting (Tape and Reel)
d) MCP1406-E/P:
6A High-Speed MOSFET
Driver, Inverting
8LD PDIP package.
Temperature Range:
Package: *
E
=
-40°C to +125°C
e) MCP1406T-E/MF: Tape and Reel,
6A High-Speed MOSFET
AT
MF
PA
SN
=
=
=
=
TO-220, 5-Lead
Driver, Inverting,
8LD DFN pkg.
Dual, Flat, No-Lead (6x5 mm Body), 8-lead
Plastic DIP, (300 mil body), 8-lead
Plastic SOIC (150 mil Body), 8-Lead
f)
MCP1406T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Inverting,
8LD SOIC pkg.
* All package offerings are Pb Free (Lead Free)
a) MCP1407-E/MF: 6A High-Speed MOSFET
Driver, Non-Inverting
8LD DFN package.
b) MCP1407-E/AT: 6A High-Speed MOSFET
Driver, Non-Inverting
5LD TO-220 package.
c) MCP1407-E/SN: 6A High-Speed MOSFET
Driver, Non-Inverting
8LD SOIC package.
d) MCP1407-E/P:
6A High-Speed MOSFET
Driver, Non-Inverting
8LD PDIP package.
e) MCP1407T-E/MF: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD DFN pkg.
f)
MCP1407T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD SOIC pkg.
© 2006 Microchip Technology Inc.
DS22019A-page 19
MCP1406/07
NOTES:
DS22019A-page 20
© 2006 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE, PowerSmart, rfPIC, and SmartShunt are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,
SEEVAL, SmartSensor and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active
Thermistor, Mindi, MiWi, MPASM, MPLIB, MPLINK, PICkit,
PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,
PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance, UNI/O, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2006, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona, Gresham, Oregon and Mountain View, California. The
Company’s quality system processes and procedures are for its PIC®
8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs,
microperipherals, nonvolatile memory and analog products. In addition,
Microchip’s quality system for the design and manufacture of
development systems is ISO 9001:2000 certified.
© 2006 Microchip Technology Inc.
DS22019A-page 21
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Habour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-4182-8400
Fax: 91-80-4182-8422
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Gumi
Tel: 82-54-473-4301
Fax: 82-54-473-4302
Boston
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
China - Fuzhou
Tel: 86-591-8750-3506
Fax: 86-591-8750-3521
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Penang
Tel: 60-4-646-8870
Fax: 60-4-646-5086
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Shunde
Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
China - Xian
Tel: 86-29-8833-7250
Fax: 86-29-8833-7256
12/08/06
DS22019A-page 22
© 2006 Microchip Technology Inc.
相关型号：
MCP1415R
The MCP1415R/16R (different pin configuration of MCP1415/16) devices are small(Tiny) footprint Low
MICROCHIP
©2020 ICPDF网 联系我们和版权申明