MCP1631VT-E/SS_技术文档

MCP1631/HV/MCP1631V/VHV

High-Speed, Pulse Width Modulator

Features

General Description

• Programmable Switching Battery Charger

Designs

The MCP1631/MCP1631V is a high-speed

analog pulse width modulator (PWM) used to develop

intelligent power systems. When combined with a

microcontroller, the MCP1631/MCP1631V will control

the power system duty cycle providing output voltage

or current regulation. The microcontroller can be used

to adjust output voltage or current, switching frequency

and maximum duty cycle while providing additional

features making the power system more intelligent,

robust and adaptable.

• High-Speed Analog PWM Controller

(2 MHz Operation)

• Combine with Microcontroller for “Intelligent”

Power System Development

• Peak Current Mode Control (MCP1631)

• Voltage Mode Control (MCP1631V)

• High Voltage Options Operate to +16V Input:

- MCP1631HV Current Mode

Typical applications for the MCP1631/MCP1631V

include programmable switch mode battery chargers

capable of charging multiple chemistries, like Li-Ion,

NiMH, NiCd and Pb-Acid configured as single or

multiple cells. By combining with a small

microcontroller, intelligent LED lighting designs and

programmable SEPIC topology voltage and current

sources can also be developed.

- MCP1631VHV Voltage Mode

• Regulated Output Voltage Options:

-

+5.0V or +3.3V

250 mA maximum current

• External Oscillator Input sets Switching

Frequency and Maximum Duty Cycle Limit

• External Reference Input Sets Regulation Voltage

or Current

The MCP1631/MCP1631V inputs were developed to

be attached to the I/O pins of a microcontroller for

design flexibility. Additional features integrated into the

MCP1631HV/MCP1631VHV provide signal condition-

ing and protection features for battery charger or

constant current source applications.

• Error Amplifier, Battery Current I_SNSAmplifier,

Battery Voltage V_SNSAmplifier Integrated

• Integrated Overvoltage Comparator

• Integrated High Current Low Side MOSFET

Driver (1A Peak)

For applications that operate from a high voltage input,

the MCP1631HV and MCP1631VHV device options

can be used to operate directly from a +3.5V to +16V

input. For these applications, an additional low drop out

+5V or +3.3V regulated output is available and can

provide current up to 250 mA to power a microcontroller

and auxiliary circuits.

• Shutdown mode reduces IQ to 2.4 µA (typical)

• Internal Overtemperature Protection

• Undervoltage Lockout (UVLO)

• Package Options:

- 4 mm x 4 mm 20-Lead QFN

(MCP1631/MCP1631V only)

- 20-Lead TSSOP (All Devices)

- 20-Lead SSOP (All Devices)

Applications

• High Input Voltage Programmable Switching

Battery Chargers

• Supports Multiple Chemistries Li-Ion, NiMH, NiCd

Intelligent and Pb-Acid

• LED Lighting Applications

• Constant Current SEPIC Power Train Design

• USB Input Programmable Switching Battery

Chargers

DS22063B-page 1

MCP1631/HV/MCP1631V/VHV

Package Types

20-Lead SSOP and TSSOP

MCP1631/MCP1631V

20-Lead SSOP and TSSOP

MCP1631HV/MCP1631VHV

PGND

20

PGND

V_EXT

19 P_VDD

18

20

1

2

1

2

V_EXT

19 P_VDD

18

17 FB

SHDN

OSC_IN

SHDN

OSC_IN

CS/V_RAMP

17 FB

3

CS/V_RAMP

OSC_DIS

4

OSC_DIS

4

COMP

16

15

14

16

15

14

13

12

5

OV_IN

V_REF

OV_IN

V_REF

IS_OUT

VS_OUT

IS_IN

6

VS_OUT

7

A_GND

NC

A_GND

NC

13 IS_IN

8

12

11

NC

VS_IN

9

VS_IN

A_{VDD_IN}

11 A_{VDD_OUT}

10

NC

V_IN

20 19 1 8 17 16

A_GND

NC

1

2

15

P_GND

14

V_EXT

EP

21

A_{VDD_IN}

3

4

13 P_VDD

NC

12

11

NC

CS/V_RAMP

VS_IN

5

6

7

8

9

10

20 Lead 4x4 QFN

MCP1631/MCP1631V

DS22063B-page 2

MCP1631/HV/MCP1631V/VHV

Typical Application Diagram

Multi-cell, Multi-Chemistry Charger

SCHOTTKY

C_C

V_INRange +5.5V to +16V

C_IN

DIODE

L1A

R_THERM

C_OUT

L1B

MCP1631HV

V_EXT

V_IN

CS

A_{VDD_OUT}

P_VDD

P_GND

IS_IN

OSC_IN

IS_OUT

NC

OV_IN

VS_IN

V_REF

FB

NC

SHDN

OSC_DIS

VS_OUT

COMP

A_GND

C

R

PIC12F683

GP1/C

GP3

V_DD

A_{VDD_OUT}

CCP1

GP5

GP4

GND

GP0/C

DS22063B-page 3

MCP1631/HV/MCP1631V/VHV

Functional Block Diagram⁽¹⁾

MCP1631HV/VHV High Speed PIC PWM

Internal Regulator for MCP1631HV and MCP1631VHV

Options Only; For MCP1631 and MCP1631V AV_{DD_IN}is input

+3.3V or +5.0V

LDO

V_DD

Internal

1.2V V_REF

V_IN

250 mA

V_DD

Overvoltage Comp

w/ Hysteresis

A_{VDD_OUT}/ A_{VDD_IN}

-

C2

+

Shutdown Control

A3 Remains On

SHDN

OV_IN

P_VDD

OSC_DIS

V_DD

100 kΩ

0.1 µA

OT

OSC_IN

V_EXT

UVLO

P_GND

S

R

Q

V_DD

100 kΩ

CS/VR_AMP

COMP

10R

V_DD

Q

+

C1

-

IS_IN

R

-

V_DD

A2

+

FB

V_REF

-

A1

+

2R

IS_OUT

Remove for MCP1631V

and MCP1631VHV Options

R

V_DD

A3

A_GND

2.7V Clamp

VS_IN

+

-

Note 1: For Shutdown control, amplifier A3 remains functional so

VS_OUT

battery voltage can be sensed during discharge phase.

2: For HV options, internal Low Drop Out Regulator provides

+3.3V or +5.0V bias to V_DD

.

DS22063B-page 4

MCP1631/HV/MCP1631V/VHV

† Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended.

Exposure to maximum rating conditions for extended periods

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

V_IN- GND (MCP1631/V)................................................+6.5V

V_IN- GND (MCP1631HV/VHV)....................................+18.0V

All Other I/O ..............................(GND - 0.3V) to (V_DD+ 0.3V)

LX to GND............................................. -0.3V to (V_DD+ 0.3V)

V_EXTOutput Short Circuit Current ........................Continuous

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature...................-40°C to +150°C

Operating Junction Temperature...................-40°C to +125°C

ESD Protection On All Pins:

may affect device reliability.

HBM.................................................................................4 kV

MM..................................................................................400V

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

_DDfor typical values = 5.0V, T_Afor typical values = +25°C, T_A= -40°C to +125°C for all minimum and maximums.

V

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Characteristics

Input Voltage (MCP1631/V)

V_DD

3.0

3.5

—

5.5

V

Non-HV Options

HV Options (Note 2)

Input Voltage

16.0

(MCP1631HV/VHV)

Undervoltage Lockout

(MCP1631/V)

UVLO

2.7

40

—

2.8

64

3.0

100

5

V

V_INFalling, V_EXTlow when input

below UVLO threshold

Undervoltage Lockout Hysteresis UVLO_{_HYS}

(MCP1631/MCP1631V)

mV

mA

UVLO Hysteresis

Input Quiescent Current

(MCP1631/V, MCP1631HV,VHV)

I(V_IN

)

3.7

SHDN = V_DD=OSC_DIS

SHDN = GND =OSC_DIS,

Shutdown Current

I_{IN_SHDN}

—

I_AVDD for MCP1631/V

I_VIN for MCP1631HV/VHV

2.4

4.4

12

17

µA

Note: Amplifier A3 remains

powered during Shutdown.

OSC_IN, OSC_DISand SHDN Input Levels

Low Level Input Voltage

High Level Input Voltage

Input Leakage Current

External Oscillator Range

V_IL

—

0.8

—

1

V

V_IH

2.0

I_LEAK

F_OSC

0.005

—

µA

—

2

MHz Maximum operating frequency is

dependent upon circuit topology

and duty cycle.

Minimum Oscillator High Time

Minimum Oscillator Low Time

T

_OH_MIN.

_OL_MIN.

10

—

ns

Oscillator Rise and Fall Time

Oscillator Input Capacitance

T_Rand T_F

C_OSC

0.01

—

5

10

—

µs

pf

Note 1

Note 1: External Oscillator Input (OSC_IN) rise and fall times between 10 ns and 10 µs were determined during device

characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%

of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and

specified that are not production tested.

2: The minimum V_INmust meet two conditions: V_IN≥ 3.5V and V_IN≥ (V_OUT(MAX)+ V_DROPOUT(MAX)).

3: TCV_OUT= (V_OUT-HIGH- V_OUT-LOW) *10⁶/ (V_R* ΔTemperature), V_OUT-HIGH= highest voltage measured over the

temperature range. V_OUT-LOW= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV_OUT

.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of V_OUT(MAX)+ V_DROPOUT(MAX)or 3.5V, whichever is greater.

DS22063B-page 5

MCP1631/HV/MCP1631V/VHV

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

V

_DDfor typical values = 5.0V, T_Afor typical values = +25°C, T_A= -40°C to +125°C for all minimum and maximums.

Parameters

Sym

Min

Typ

Max

Units

Conditions

External Reference Input

Reference Voltage Input

V_REF

0

—

AV_DD

V

The reference input is capable of

rail-to-rail operation.

Internal Driver)

R_DSONP-channel

R_DSONN-channel

V_EXTRise Time

R_{DSon_P}

R_{DSon_N}

T_RISE

—

7.2

3.8

2.5

15

18

Ω

ns

C_L= 100 pF

Typical for V_IN= 5V (Note 1)

V_EXTFall Time

T_FALL

—

2.7

18

ns

C_L= 100 pF

Typical for V_IN= 5V (Note 1)

Error Amplifier (A1)

Input Offset Voltage

V_OS

I_BIAS

PSRR

V_CM

-5

-0.6

0.05

85.4

—

+5

1

mV

µA

dB

V

A1 Input Bias Current

—

Error Amplifier PSRR

—

GND - 0.3

—

V_IN

—

V_IN= 3.0V to 5.0V, V_CM= 1.2V

V_IN= 5V, V_CM= 0V to 2.5V

Common Mode Input Range

Common Mode Rejection Ratio

Open-loop Voltage Gain

90

dB

A_VOL

80

95

R_L= 5 kΩ to V_IN/2,

100 mV < V_EAOUT< V_IN- 100 mV,

V_CM= 1.2V

Low-level Output

V_OL

GBWP

I_SINK

—

4

25

3.5

12

GND + 65

mV

RL = 5 kΩ to V_IN/2

Gain Bandwidth Product

Error Amplifier Sink Current

—

MHz V_IN= 5V

mA

V_IN= 5V, V_REF= 1.2V,

_FB= 1.4V, V_COMP= 2.0V

V_IN= 5V, V_REF= 1.2V,

_FB= 1.0V, V_COMP= 2.0V,

V

Error Amplifier Source Current

I_SOURCE

-2

-9.8

—

mA

V

Absolute Value

Current Sense (CS) Amplifier (A2)

Input Offset Voltage

V_OS

I_BIAS

-3.0

—

1.2

0.13

65

+3.0

1

mV

µA

dB

CS Input Bias Current

CS Amplifier PSRR

PSRR

—

V_IN= 3.0V to 5.0V, V_CM= 0.12V,

GAIN = 10

Closed-loop Voltage Gain

A2_VCL

—

10

—

V/V

R_L= 5 kΩ to V_IN/2,

100 mV < V_OUT< V_IN- 100 mV,

V_CM= +0.12V

Low-level Output

V_OL

I_SINK

5

11

GND + 50

mV

mA

RL = 5 kΩ to V_IN/2

CS Sink Current

17.7

-19.5

—

CS Amplifier Source Current

Voltage Sense (VS) Amplifier (A3)

Input Offset Voltage

I_SOURCE

-5

V_OS

-5

0.9

+5

1

mV

µA

VS Input Bias Current

I_BIAS

—

0.001

Note 1: External Oscillator Input (OSC_IN) rise and fall times between 10 ns and 10 µs were determined during device

characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%

of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and

specified that are not production tested.

2: The minimum V_INmust meet two conditions: V_IN≥ 3.5V and V_IN≥ (V_OUT(MAX)+ V_DROPOUT(MAX)).

3: TCV_OUT= (V_OUT-HIGH- V_OUT-LOW) *10⁶/ (V_R* ΔTemperature), V_OUT-HIGH= highest voltage measured over the

temperature range. V_OUT-LOW= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV_OUT

.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of V_OUT(MAX)+ V_DROPOUT(MAX)or 3.5V, whichever is greater.

DS22063B-page 6

MCP1631/HV/MCP1631V/VHV

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

_DDfor typical values = 5.0V, T_Afor typical values = +25°C, T_A= -40°C to +125°C for all minimum and maximums.

V

Parameters

Sym

Min

Typ

Max

Units

Conditions

VS Amplifier PSRR

PSRR

V_CM

—

GND

—

65

—

1

—

AV_DD

—

dB

V

V_IN= 3.0V to 5.0V, V_CM= 1.2V

Rail to Rail Input

Common Mode Input Range

Closed-loop Voltage Gain

A3_VCL

V/V

R_L= 5 kΩ to V_IN/2,

100 mV < V_EAOUT< V_IN- 100 mV,

V_CM= 1.2V

Low-level Output

V_OL

I_SINK

—

1

38

5

GND + 85

mV

mA

RL = 5 kΩ to V_IN/2

VS Amplifier Sink Current

VS Amplifier Source Current

Peak Current Sense Input (C1)

—

I_SOURCE

-2

-5

Maximum Current Sense Signal

MCP1631/MCP1631HV

V_{CS_MAX}

V_RAMP

0.85

2.7

0.9

0.98

2.9

V

Maximum Ramp Signal

2.78

V_IN> 4V

MCP1631V/MCP1631VHV

Maximum CS input range limited

by comparator input common

mode range. V_{CS_MAX}= V_IN-1.4V

Current Sense Input Bias Current

I_{CS_B}

—

-0.1

8.5

—

µA

ns

V_IN= 5V

Delay From CS to V_EXT

MCP1631

T_{CS_VEXT}

25

Note 1

Minimum Duty Cycle

DC_MIN

—

0

%

V_FB= V_REF+ 0.1V,

V_CS= GND

Overvoltage Sense Comparator (C2)

OV Reference Voltage High

OV Reference Voltage Low

OV Hysteresis

OV_{_VREF_H}

—

1.15

—

1.23

1.18

50

—

1.23

—

V

OV_{_VREF_L}

OV_HYS

mV

Overvoltage Comparator

Hysteresis

OV_IN Bias Current

OV__IBIAS

T_{OV_VEXT}

—

0.001

63

1

µA

ns

Delay From OV to V_EXT

150

Delay from OV detection to PWM

termination (Note 1)

OV Input Capacitance

C__OV

—

5

—

pF

Internal Regulator HV Options Input / Output Characteristics

Input Operating Voltage

Maximum Output Current

Output Short Circuit Current

V_IN

3.5

250

—

16.0

—

V

Note 2

I_{OUT_mA}

I_{OUT_SC}

mA

400

—

V_IN= V_IN(MIN)(Note 2),

V_OUT= GND,

Current (average current)

measured 10 ms after short is

applied.

Output Voltage Regulation

V_OUT

V_R-3.0%

—

V_R±0.4% V_R+3.0%

50 150

V

V_R= 3.3V or 5.0V

V_OUTTemperature Coefficient

TCV_OUT

ppm/ Note 3

°C

Note 1: External Oscillator Input (OSC_IN) rise and fall times between 10 ns and 10 µs were determined during device

characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%

of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and

specified that are not production tested.

2: The minimum V_INmust meet two conditions: V_IN≥ 3.5V and V_IN≥ (V_OUT(MAX)+ V_DROPOUT(MAX)).

3: TCV_OUT= (V_OUT-HIGH- V_OUT-LOW) *10⁶/ (V_R* ΔTemperature), V_OUT-HIGH= highest voltage measured over the

temperature range. V_OUT-LOW= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV_OUT

.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of V_OUT(MAX)+ V_DROPOUT(MAX)or 3.5V, whichever is greater.

DS22063B-page 7

MCP1631/HV/MCP1631V/VHV

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

V

_DDfor typical values = 5.0V, T_Afor typical values = +25°C, T_A= -40°C to +125°C for all minimum and maximums.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Line Regulation

Load Regulation

ΔV_OUT

/

-0.3

±0.1

+0.3

%/V (V_OUT(MAX)+ V_DROPOUT(MAX)) ≤

V_IN≤ 16V Note 2

(V_OUTXΔ

V_IN

)

ΔV_OUT

/

-2.5

±1.0

+2.5

%

I_L= 1.0 mA to 250 mA, Note 4

V_OUT

Dropout Voltage

Note 2, Note 5

V_DROPOUT

—

330

525

650

725

—

mV

µs

I_L= 250 mA, V_R= 5.0V

I_L= 250 mA, V_R= 3.3V

Output Delay Time

T_DELAY

e_N

1000

V_IN= 0V to 6V, V_OUT= 90% V_R,

R_L= 50Ω resistive

Output Noise

—

8

—

µV/

I_L= 50 mA, f = 1 kHz, C_OUT=

(Hz)^1/21 µF

Power Supply Ripple Rejection

Ratio

PSRR

44

dB

f = 100 Hz, C_OUT= 1 µF,

I_L= 100 µA,

_INAC=100 mV pk-pk,

_IN= 0 µF, V_R= 1.2V

V

C

Protection Features

Thermal Shutdown

T_SHD

—

150

18

—

°C

Thermal Shutdown Hysteresis

T_{SHD_HYS}

Note 1: External Oscillator Input (OSC_IN) rise and fall times between 10 ns and 10 µs were determined during device

characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%

of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and

specified that are not production tested.

2: The minimum V_INmust meet two conditions: V_IN≥ 3.5V and V_IN≥ (V_OUT(MAX)+ V_DROPOUT(MAX)).

3: TCV_OUT= (V_OUT-HIGH- V_OUT-LOW) *10⁶/ (V_R* ΔTemperature), V_OUT-HIGH= highest voltage measured over the

temperature range. V_OUT-LOW= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV_OUT

.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with an applied input voltage of V_OUT(MAX)+ V_DROPOUT(MAX)or 3.5V, whichever is greater.

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise indicated, all limits are specified for: V_IN+ 3.0V to 5.5V

Parameters

Temperature Ranges

Sym

Min

Typ

Max

Units

Conditions

Operating Junction Temperature

Range

T_J

-40

—

+125

°C

Steady State

Storage Temperature Range

T_A

T_J

-65

—

+150

°C

Maximum Junction Temperature

Package Thermal Resistances

Thermal Resistance, 20L-TSSOP

Transient

θ_JA

—

90

89.3

43

—

°C/W Typical 4 Layer board with

interconnecting vias

Thermal Resistance, 20L-SSOP

Thermal Resistance, 20L-QFN

°C/W Typical 4 Layer board with

interconnecting vias

°C/W Typical 4 Layer board with

interconnecting vias

DS22063B-page 8

MCP1631/HV/MCP1631V/VHV

2.0

TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are

not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF, V_INfor typical values = 5.0V, T_A

for typical values = +25°C.

2.89

2.88

2.87

2.86

2.85

2.84

2.83

2.82

2.81

2.8

4.00

3.70

3.40

3.10

2.80

2.50

2.20

1.90

1.60

1.30

1.00

V_DD= +5.5V

Device Turn On

V_DD= +5.0V

V_DD= +3.0V

V_DD= +4.0V

V_DD= +3.3V

Device Turn Off

Ambient Temperature (°C)

FIGURE 2-1:

Undervoltage Lockout vs.

FIGURE 2-4:

Shutdown Current vs.

Temperature.

Temperature (MCP1631/MCP1631V).

0.068

0.067

0.066

0.065

0.064

0.063

0.062

0.061

1.60

V_DD= +5.5V

V_DD= +5.0V

1.50

1.40

1.30

1.20

1.10

1.00

V_DD= +4.0V

V_DD= +3.3V

V_DD= +3.0V

Ambient Temperature (°C)

FIGURE 2-2:

Undervoltage Lockout

FIGURE 2-5:

Oscillator Input Threshold

Hysteresis vs. Temperature.

vs. Temperature.

4.00

1.70

1.60

1.50

1.40

1.30

1.20

1.10

1.00

V_DD= +5.5V

V_DD= +5.0V

V_DD= +5.5V

3.80

3.60

3.40

3.20

3.00

2.80

V_DD= +5.0V

V_DD= +4.0V

V_DD= +3.3V

V_DD= +3.0V

0.90

0.80

V_DD= +3.0V

Ambient Temperature (°C)

FIGURE 2-3:

Input Quiescent Current vs.

FIGURE 2-6:

Oscillator Disable Input

Temperature.

Threshold vs. Temperature.

DS22063B-page 9

MCP1631/HV/MCP1631V/VHV

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

V_INfor typical values = 5.0V, T_Afor typical values = +25°C.

14

12

10

8

5.0

4.7

4.4

4.1

3.8

3.5

3.2

2.9

2.6

2.3

2.0

C_L= 100 pF

V_DD= +3.0V

V_DD= +3.3V

V_DD= +3.0V

V_DD= +4.0V

V_DD= +5.0V

V_DD= +4.0V

V_DD= +5.0V

6

V_DD= +5.5V

4

Ambient Temperature (°C)

FIGURE 2-7:

V

P-Channel Driver

FIGURE 2-10:

V

Fall Time vs.

EXT

R

vs. Temperature.

Temperature.

DSON

6.6

6.2

5.8

-0.50

-0.55

-0.60

-0.65

-0.70

V_DD= +5.0V

V_DD= +3.3V

V_DD= +5.5V

5.4

V_DD= +3.0V

5.0

4.6

4.2

3.8

3.4

V_DD= +3.0V

V_DD= +3.3V

V_DD= +4.0V

V_DD= +5.0V

-0.75

-0.80

V_DD= +5.5V

3.0

Ambient Temperature (°C)

FIGURE 2-8:

V

N-Channel Driver

FIGURE 2-11:

Amplifier A1 Offset Voltage

EXT

R

vs. Temperature.

DSON

40

35

30

25

20

15

10

4.7

4.4

C_L= 100 pF

V_DD= +3.3V

V_DD= +5.5V

4.1

3.8

3.5

3.2

2.9

2.6

2.3

2.0

V_DD= +5.0V

V_DD= +4.0V

V_DD= +3.0V

V_DD= +4.0V

V_DD= +5.5V

V_DD= +5.0V

V_DD= +3.3V

5

0

V_DD= +3.0V

Ambient Temperature (°C)

FIGURE 2-9:

V

Rise Time vs.

FIGURE 2-12:

Amplifier A1 Output Voltage

EXT

Temperature.

Low vs. Temperature.

DS22063B-page 10

MCP1631/HV/MCP1631V/VHV

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

V_INfor typical values = 5.0V, T_Afor typical values = +25°C.

18.8

17.6

16.4

15.2

14.0

12.8

11.6

10.4

9.2

18

16

14

12

10

8

V_DD= +5.5V

V_DD= +3.0V

V_DD= +3.3V

V_DD= +5.0V

V_DD= +4.0V

V_DD= +5.0V

V_DD= +3.3V

V_DD= +5.5V

6

V_DD= +3.0V

8.0

4

Ambient Temperature (°C)

FIGURE 2-13:

Amplifier A1 Sink Current

FIGURE 2-16:

Amplifier A2 Output Voltage

vs. Temperature.

Low vs. Temperature.

14.0

40

35

V_DD= +5.0V

12.5

11.0

9.5

V_DD= +4.0V

V_DD= +3.3V

V_DD= +4.0V

30

V_DD= +3.0V

V_DD= +5.5V

25

8.0

20

V_DD= +5.0V

V_DD= +3.3V

6.5

15

10

V_DD= +3.0V

V_DD= +5.5V

5.0

Ambient Temperature (°C)

FIGURE 2-14:

Amplifier A1 Source Current

FIGURE 2-17:

Amplifier A2 Sink Current

vs. Temperature.

1.6

1.4

1.2

1.0

0.8

26

24

22

20

V_DD= +5.5V

V_DD= +3.3V

V_DD= +5.0V

V_DD= +4.0V

V_DD= +5.0V

18

16

14

12

10

V_DD= +5.5V

V_DD= +3.0V

V_DD= +3.3V

0.6

V_DD= +3.0V

0.4

Ambient Temperature (°C)

FIGURE 2-15:

Amplifier A2 Offset Voltage

FIGURE 2-18:

Amplifier A2 Source Current

vs. Temperature.

DS22063B-page 11

MCP1631/HV/MCP1631V/VHV

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

V_INfor typical values = 5.0V, T_Afor typical values = +25°C.

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2

V_DD= +5.0V

V_DD= +5.5V

V_DD= +5.0V

1.5

1

V_DD= +5.5V

V_DD= +4.0V

V_DD= +3.0V

V_DD= +3.3V

0.5

0

V_DD= +4.0V

V_DD= +3.3V

V_DD= +3.0V

Ambient Temperature (°C)

FIGURE 2-19:

Amplifier A3 Offset Voltage

FIGURE 2-22:

Amplifier A3 Source Current

vs. Temperature.

0.920

0.918

0.916

0.914

0.912

0.910

0.908

0.906

0.904

70

60

50

V_DD= +5.5V

V_DD= +5.0V

V_DD= +5.5V

V_DD= +5.0V

V_DD= +4.0V

40

30

20

10

0

V_DD= +4.0V

V_DD= +3.3V

V_DD= +3.0V

0.902

0.900

V_DD= +3.3V

Ambient Temperature (°C)

FIGURE 2-20:

Amplifier A3 Output Voltage

FIGURE 2-23:

MCP1631 and MCP1631HV

Low vs. Temperature.

CS Maximum Voltage (V) vs. Temperature.

6.8

6.3

5.8

5.3

4.8

4.3

3.8

3.3

2.8

2.790

V_DD= +5.0V

2.788

2.786

2.784

2.782

2.780

2.778

2.776

2.774

2.772

2.770

V_DD= +3.0V to +5.5V

Ambient Temperature (°C)

FIGURE 2-21:

vs. Temperature.

Amplifier A3 Sink Current

FIGURE 2-24:

MCP1631VHV V

MCP1631V and

Max Voltage (V).

RAMP

DS22063B-page 12

MCP1631/HV/MCP1631V/VHV

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

V_INfor typical values = 5.0V, T_Afor typical values = +25°C.

1.27

1.26

1.25

1.24

1.23

1.22

1.21

1.2

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

V_DD= +5.5V

V_DD= +4.0V

V_DD= +5.0V

V_DD= +4.0V

V_DD= +3.3V

V_DD= +3.0V

Ambient Temperature (°C)

Ambinet Temperature (°C)

FIGURE 2-25:

Overvoltage Threshold

FIGURE 2-28:

Shutdown Input Voltage

High (V) vs. Temperature.

Threshold (V) vs. Temperature.

1.187

6.00

V_OUT= 5.0V

I_OUT= 0 µA

5.00

1.187

V_DD= +3.0V

1.186

V_DD= +4.0V

V_DD= +3.3V

1.186

0°C

4.00

1.185

1.184

1.183

-45°C

+130°C

3.00

+25°C

+90°C

2.00

1.00

V_DD= +5.5V

1.183

1.182

V_DD= +5.0V

6

8

10

12

14

16

18

Input Voltage (V)

Ambient Temperature (°C)

FIGURE 2-26:

Overvoltage Threshold

FIGURE 2-29:

LDO Quiescent Current vs.

Low (V) vs. Temperature.

Input Voltage.

0.080

3.00

I_OUT= 0mA

V_OUT= 1.2V

V_IN= 2.7V

V_DD= +5.5V

V_OUT= 2.5V

V_IN= 3.5V

0.070

V_DD= +3.3V

2.50

2.00

1.50

1.00

0.50

0.00

0.060

0.050

0.040

0.030

0.020

0.010

0.000

V_DD= +4.0V

V_OUT= 5.0V

V_DD= +3.0V

V_DD= +5.0V

V_IN= 6.0V

-45

-20

5

30

55

80

105 130

Ambient Temperature (°C)

Junction Temperature (°C)

FIGURE 2-27:

Overvoltage Threshold

FIGURE 2-30:

LDO Quiescent Current vs.

Hysteresis (V) vs. Temperature.

Junction Temperature.

DS22063B-page 13

MCP1631/HV/MCP1631V/VHV

Typical Performance Curves (Continued)

Note: Unless otherwise noted, V_IN= 3.0V to 5.5V, F_OSC= 1 MHz with 10% Duty Cycle, C_IN= 0.1 µF,

V_INfor typical values = 5.0V, T_Afor typical values = +25°C.

5.06

5.04

5.02

5.00

4.98

4.96

4.94

4.92

0.18

0.16

0.14

0.12

0.10

0.08

0.06

V_IN= 6V

V_OUT= 5.0V

V_IN= 6.0V to 16.0V

+90°C

+130°C

200 mA

0 mA

250 mA

0°C

-45°C

+25°C

100 mA

80

0

50

100

150

200

250

-45

-20

5

30

55

105

130

Load Current (mA)

Temperature (°C)

FIGURE 2-31:

LDO Output Voltage vs.

FIGURE 2-34:

LDO Line Regulation vs.

Load Current.

Temperature.

0.50

0

-10

-20

-30

-40

-50

-60

-70

-80

-90

V_OUT= 5.0V

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

+130°C

+90°C

+25°C

V_R=5.0V

V_IN=6.0V

+0°C

V

C

I

_INAC= 100 mV p-p

_IN=0 μF

_OUT=100 µA

-45°C

0

25 50 75 100 125 150 175 200 225 250

Load Current (mA)

0.01

0.1

1

10

100

1000

Frequency (kHz)

FIGURE 2-32:

LDO Dropout Voltage vs.

FIGURE 2-35:

LDO PSRR vs. Frequency.

Load Current.

1.00

100

10

V_OUT= 5.0V

_OUT= 1 to 250 mA

I_OUT= 50 mA

V_R= 5.0V, V_IN= 6.0V

I

0.80

0.60

0.40

0.20

0.00

-0.20

-0.40

V_IN= 16V

V_IN= 6V

1

V_IN= 12V

0.1

0.01

V_IN= 8V

V_IN= 14V

0.001

0.01

-45

-20

5

30

55

80

105 130

0.1

1

10

100

1000

Frequency (kHz)

Temperature (°C)

FIGURE 2-36:

LDO Output Noise vs.

FIGURE 2-33:

LDO Load Regulation vs.

Frequency.

Temperature.

DS22063B-page 14

MCP1631/HV/MCP1631V/VHV

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

MCP1631HV/

MCP1631/MCP1631V

MCP1631VHV

Sym

Description

4x4

TSSOP/SSOP

QFN

TSSOP/SSOP

1

2

15

16

17

18

19

20

1

2

P_GND

SHDN

OSC_IN

Power ground return

Shutdown input

3

External oscillator input

4

OSC_DISOscillator disable input

5

OV_IN

V_REF

A_GND

NC

Overvoltage comparator input

6

External voltage reference input

Quiet or analog ground

No connection

7

8,9,10

—

11

—

12

13

14

15

16

17

18

19

20

—

2,4,12

—

3

8,9

10

—

11

12

13

14

15

16

17

18

19

20

—

V_IN

High voltage input

A_{VDD_IN}Analog bias voltage input

A_{VDD_OUT}Regulated V_DDoutput

—

5

VS_IN

IS_IN

Voltage sense amplifier (A3) input

6

Current sense input

7

VS_OUT

IS_OUT

COMP

FB

Voltage sense amplifier output

Current sense amplifier output

Error amplifier (A1) output

Error amplifier inverting input (A1)

8

9

10

11

13

14

21

CS/V_RAMPCS - current sense input; V_RAMPvoltage ramp input

P_VDD

V_EXT

EP

Power V_DDinput

External driver output

Exposed Thermal Pad (EP); must be connected to A_GND

3.1

Power Ground (P_GND

)

3.4

Oscillator Disable (OSC_DIS)

Connect power ground return pin to power ground

plane, high peak current flows through the P_GNDduring

the turn on and turn off the external MOSFET devices.

Oscillator disable input, used to asycnronously

terminate the V_EXTduty cycle. Commonly used to

modulate current for LED driver applications.For

minimum shutdown I_Q, connect OSC_DISto SHDN.

3.2

Shutdown Input (SHDN)

3.5

Overvoltage Input (OV_IN)

Shutdown input logic low disables device and lowers I_Q

to minimum value, amplifier A3 (VS) remains functional

for battery voltage sense applications.

Overvoltage Comparator input, connect to voltage

divider, internal comparator terminates V_EXToutput in

50 ns to limit output voltage to predetermined value.

3.3

Oscillator Input (OSC_IN)

3.6

External Reference Voltage Input

(V_REF

External Oscillator Input, used to set power train

switching frequency and maximum duty cycle, V_EXT

enabled while low and disabled while high.

)

External Voltage Reference input, connect fixed or

variable external reference to V_REF, with A1 configured

as an error amplifier, the power supply output variable

(voltage or current) will follow this input.

DS22063B-page 15

MCP1631/HV/MCP1631V/VHV

3.7

Analog Ground (A_GND

)

3.15 Current Sense Output (IS_OUT)

Quiet or analog ground, connect to analog ground

plane to minimize noise on sensitive MCP1631

circuitry.

Current sense amplifier output, connect to error

amplifier (A1) inverting input (FB) to regulate SEPIC

output current.

3.8

No Connection (NC)

3.16 Error Amplifier Output (COMP)

No connection.

Error amplifier (A1) output, connect control loop

compensation from FB input to COMP output pin.

3.9

Input Voltage (V_IN)

3.17 Feedback (FB)

High voltage input for MCP1631HV/MCP1631VHV

devices, operates from 3.5V to 16V input supply.

Error amplifier input (A1), connect to current sense

output amplifier (A2) to regulate current.

3.10 Analog supply Input (A_{VDD_IN}

)

3.18 Current Sense or Voltage Ramp

Analog bias input, minimum 3.0V to 5.5V operation for

MCP1631/MCP1631V devices.

(CS/V_RAMP

)

For MCP1631/MCP1631HV applications, connect to

low side current sense of SEPIC switch for current

mode control and peak current limit. For MCP1631/

MCP1631HV application, connect artificial ramp

voltage to V_RAMPinput for voltage mode PWM control.

3.11 Analog Supply Output (A_{VDD_OUT}

)

Regulated V_DDoutput used to power internal

MCP1631HV/MCP1631VHV and external

microcontroller, supplies up to 250 ma of bias current at

3.3V or 5.0V regulated low drop out rail.

3.19 Power VDD (P_VDD

)

Power V_DDinput, V_EXTgate drive supply input, connect

to +5.0V or +3.3V supply for driving external MOSFET.

3.12 Voltage Sense Input (VS_IN)

Voltage sense amplifier (A3) input, connect to high

impedance battery voltage resistor divider to sense

battery voltage with minimal loading.

3.20 External Driver (V_EXT

)

High current driver output used to drive external

MOSFET at high frequency, capable of 1A peak

3.13 Current Sense Input (IS_IN)

currents with +5.0V P_VDD

.

Connect to SEPIC secondary side sense resistor to

develop a regulated current source used to charge

multi-chemistry batteries.

3.21 Exposed PAD 4x4 QFN (EP)

There is an internal electrical connection between the

Exposed Thermal Pad (EP) and the A_GNDpin; they

must be connected to the same potential on the Printed

Circuit Board (PCB).

3.14 Voltage Sense Output (VS_OUT

)

Voltage sense amplifier output, connect to

microcontroller analog to digital converter to measure

battery voltage.

DS22063B-page 16

MCP1631/HV/MCP1631V/VHV

4.4

Current Sense Amplifier (A2)

4.0

4.1

DETAILED DESCRIPTION

Device Overview

The A2 current sense amplifier is used to sense current

in the secondary side of a SEPIC converter or

freewheeling current in a Buck converter. The inverting

amplifier has a built in voltage gain of ten with low offset

and high speed.

The MCP1631/MCP1631V device family combines the

analog functions to develop high frequency switch

mode power systems while integrating features for

battery charger and LED current source applications.

With the integration of a MOSFET driver, voltage

sense, current sense and over voltage protection, the

MCP1631/MCP1631V is a highly integrated, high-

speed analog pulse width modulator.

4.5

Voltage Sense Amplifier (A3)

The A3 voltage sense amplifier is used to sense battery

voltage. In battery powered applications, it is important

to minimize the steady stage load current draw on the

battery. The voltage sense amplifier (A3) is used to

buffer a high impedance series divider used to reduce

the battery pack voltage to a level that can be read

using an analog to digital converter. The voltage sense

amplifier draws a very low quiescent current and

remains functional when the MCP1631/MCP1631V is

shutdown making it possible to read battery voltage

without turning on the charger.

The MCP1631/MCP1631V output (V_EXT) is used to

control the switch of the power system (on and off

time). By controlling the switch on and off time, the

power system output can be regulated. With the

oscillator and reference voltage as inputs, a simple

interface to a microcontroller is available with the

MCP1631/MCP1631V to develop intelligent power

systems. A good example of an intelligent power

system is a battery charger, programmable LED driver

current source or programmable power supply.

4.6

Overvoltage Comparator(C2)

The MCP1631/MCP1631V is

a combination of

The C2 overvoltage comparator is used to prevent the

power system from being damaged when the load

(battery) is disconnected. By comparing the divided

down power train output voltage with a 1.2V internal

reference voltage, the MCP1631/MCP1631V V_EXT

output switching is interrupted when the output voltage

is above a pre-set value. This limits the output voltage

of the power train, the 0V comparator’s hysteresis will

operate as a ripple regulator.

specialty analog blocks consisting of a Pulse Width

Modulator (PWM), MOSFET Driver, Current Sense

Amplifier (A2), Voltage Sense Amplifier (A3),

Overvoltage Comparator (C2) and additional features

(Shutdown, Undervoltage Lockout, Overtemperature

Protection). For the HV options, an internal low dropout

regulator is integrated for operation from high voltage

inputs (MCP1631HV/MCP1631VHV).

4.2

Pulse Width Modulator (PWM)

4.7

Shutdown Input

The internal PWM of the MCP1631/MCP1631V is

comprised of an error amplifier, high-speed comparator

and latch. The output of the amplifier is compared to

either the MCP1631 CS (primary current sense input)

or the MCP1631V V_RAMP(voltage mode ramp input) of

the high speed comparator. When the CS or VRAMP

signal reach the level of the error amplifier output, the

on cycle is terminated and the external switch is

latched off until the beginning of the next cycle (high to

low transition of OSC_IN).

The MCP1631/MCP1631V shutdown feature is used to

disable the device with the exception of the voltage

sense amplifier A3 to minimize quiescent current draw.

While shutdown, A3 remains operational while the

device draws 4.4 µA from the input.

4.8

Protection

The MCP1631/MCP1631V has built in Undervoltage

Lockout (UVLO) that ensures the output V_EXTpin is

forced to a known state (low) when the input voltage or

A_VDDis below the specified value. This prevents the

main MOSFET switch from being turned on during a

power up or down sequence.

4.3

V_EXTMOSFET Driver

The MCP1631/MCP1631V output can be used to drive

the external MOSFET directly for low side topology

applications. The V_EXTis capable of sourcing up to

700 mA and sinking up to 1A of current from a P_VDD

source of 5V. Typical output power using the V_EXT

output to directly drive the external MOSFET can

exceed 50W depending upon application and switching

frequency.

The MCP1631/MCP1631V provides

a

thermal

shutdown protection feature, if the internal junction

temperature of the device becomes high, the

overtemperature protection feature will disable (pull the

V_EXToutput low) and shut down the power train.

DS22063B-page 17

MCP1631/HV/MCP1631V/VHV

NOTES:

DS22063B-page 18

MCP1631/HV/MCP1631V/VHV

inductors has significant advantages in addition to the

size and cost benefits of a single core with multiple

windings.

5.0

5.1

APPLICATION INFORMATION

Typical Applications

The MCP1631/MCP1631V can be used to develop

intelligent power management solutions, typical

applications include a multi-chemistry battery charger

used to charge Li-Ion, NiMH or NiCd batteries and

constant current LED drivers.

5.4

Mixed Signal Design

For intelligent battery charger design, a microcontroller

is used to generate the proper charge profile, charge

termination, safety timers and battery charger features.

When using the MCP1631/MCP1631V for Li-Ion

battery charger applications, the microcontroller is also

used to generate the constant voltage regulation phase

of the charge cycle. This is accomplished by using the

external reference feature of the MCP1631/MCP1631V

as a programmable current source. The microcontroller

is used to vary the V_REFinput of the MCP1631/

MCP1631V. The charge current into the battery is

regulated by the MCP1631/MCP1631V, the level that it

is regulated to is set by the programmability of the

microcontroller.

5.2

Battery Charger Design Overview

The design approach for developing high current

switching battery chargers using the MCP1631 is

described in this section. Depending on input voltage

range, there are two versions of the device that can be

used to accommodate a very wide range of input

voltages.

For a regulated input voltage range of 5V, the

MCP1631/MCP1631V device is used, for this input

voltage application (regulated ac-dc converter or USB

input), the MCP1631/MCP1631V is powered directly

from the 5V dc input.

The internal MCP1631/MCP1631V analog compo-

nents are used to regulate the microcontroller

programmed current. The secondary or battery current

is sensed using amplifier A2, the output of A2 is feed

into the input of the error amplifier A1, the output of A1

sets the peak switch current of the SEPIC converter, it

increases or decreases the battery current to match its

(A1) inputs. By increasing the V_REFor non-inverting

input of A1, the battery current is increased.

For input voltages to +16V steady state with +18V

transients, the MCP1631HV/MCP1631VHV, or high

voltage option can be used. The high voltage devices

integrate a low dropout (LDO) linear regulator with a set

output voltage of +3.3V or +5.0V that internally powers

the MCP1631HV/MCP1631VHV and is also capable of

providing 250 mA of bias current for the attached

microcontroller and other circuitry. MCP1631HV/

MCP1631VHV internal power dissipation must be

considered when loading the internal LDO regulator.

5.5

Safety Features

The MCP1631/MCP1631V integrates a high-speed

comparator used to protect the charger and battery

from being exposed to high voltages if the battery is

removed or opens. Comparator C2 is used to sense the

SEPIC output voltage. If the divided down output

voltage becomes higher than the 1.2V internal

MCP1631/MCP1631V reference, the V_EXTPWM

output is terminated within 50 ns preventing the build

up of voltage on the SEPIC output.

For higher input voltages the MCP1631/MCP1631V

can be biased from an external regulated +3.0V to

+5.5V supply.

5.3

Programmable Single Ended

Primary Inductive (SEPIC) Current

Source

Peak switch current is limited by the MCP1631/

MCP1631V comparator C1 and error amplifier A1

output voltage clamp. For the MCP1631, the error

amplifier output is clamped at 2.7V. The A1 output is

divided down by 1/3 and compared with CS (current

sense) input. The V_EXToutput is turned off if the CS

input reaches a level of 1/3 of 2.7V or 0.9V in 12 ns,

preventing the external switch current from becoming

high enough to damage the SEPIC power train.

The MCP1631/MCP1631V family integrates features

that are necessary to develop programmable current

sources. The SEPIC converter is commonly used in

battery charger applications. The primary or input

inductor is used to filter input current and minimize the

switching noise at the converter input. The primary to

secondary capacitive isolation blocks any dc path from

input to output making the SEPIC safer than Buck or

other non-isolated topologies. The SEPIC rectifier

blocks the reverse path preventing battery leakage, in

other topologies an additional diode for blocking is

necessary adding additional components and

efficiency loss.

Internal overtemperature protection limits the device

junction temperature to 150°C preventing catastrophic

failure for overtemperature conditions. Once the

temperature decreases 10°C, the device will resume

normal operation.

The input or primary inductor and output or secondary

inductor are typically constructed from a single

magnetic device with two windings, this is commonly

referred to as a coupled inductor. Using coupled

Safety timers are typically used to limit the amount of

energy into a faulted battery or pack. This is

accomplished using the microcontroller and MCP1631/

MCP1631V shutdown feature.

DS22063B-page 19

MCP1631/HV/MCP1631V/VHV

5.6

OSC Disable Feature

The oscillator disable or OSC_DIS input is used to

asychronously terminate the PWM V_EXToutput. This

can be used with a slow PWM input to modulate current

into an LED for lighting applications.

Multi-cell Multi-Chemistry Charger

SCHOTTKY

DIODE

C

V

Range +4.5V to +5.5V

CIN

IN

L1A

R

THERM

C

OUT

L1B

MCP1631

V

NC

A

EXT

CS

VDD_IN

P

GND

P

VDD

IS

OSC

IS

IN

OV

OUT

IN

VS

NC

FB

NC

IN

V

REF

SHDN

OSC

COMP

DIS

VS

A

OUT

GND

C

R

PIC12F683

V

GP1/C

GP3

DD

A

VDD_OUT

CCP1

GP4

GP5

GND

GP0/C

FIGURE 5-1:

+5V ac-dc or USB Input Application.

DS22063B-page 20

MCP1631/HV/MCP1631V/VHV

Multi-cell Multi-Chemistry Charger

SCHOTTKY

C_C

V_INRange +5.5V to +16V

C_IN

DIODE

L1A

R_THERM

C_OUT

L1B

MCP1631HV

V_EXT

V_IN

A_{VDD_OUT}

CS

PGND

IS_IN

P_VDD

OSC_IN

IS_OUT

OV_IN

VS_IN

NC

FB

NC

V_REF

SHDN

OSC_DIS

VS_OUT

COMP

A_GND

C

R

PIC12F683

V_DD

GP1/C

GP3

A_{VDD_OUT}

CCP1

GP4

GP5

GND

GP0/C

FIGURE 5-2:

+5.5V to +16.0V Input.

DS22063B-page 21

MCP1631/HV/MCP1631V/VHV

Multi-cell Multi-Chemistry Charger

V_INRange +6V to +40V

SCHOTTKY

DIODE

CIN

C_C

L1A

+5V

HV

R_THERM

Regulator

C_OUT

L1B

MCP1631

V_EXT

NC

A_{VDD_IN}

CS

P_GND

P_VDD

OSC_IN

IS_OUT

IS_IN

OV_IN

VS_IN

NC

V_REF

SHDN

FB

NC

OSC_DIS

VS_OUT

COMP

A_GND

C

R

PIC12F683

V_DD

GP1/C

GP3

A_{VDD_OUT}

CCP1

GP4

GND

GP5

GP0/C

FIGURE 5-3:

Wide Range High Voltage Input.

DS22063B-page 22

MCP1631/HV/MCP1631V/VHV

6.0

6.1

PACKAGING INFORMATION

Package Marking Information (Not to Scale)

20-Lead 4x4 QFN (MCP1631/MCP1631V)

Example:

XXXXX

1631

XXXXXX

YWWNNN

e

3

E/ML^^

0822

256

20-Lead SSOP (All Devices)

Example:

XXXXXXXXXXX

YYWWNNN

1631V

EST^^

0822256

e

3

20-Lead TSSOP (All Devices)

Example:

XXXXXXXX

XXXXXNNN

YYWW

1631HV33

EST^^256

e

3

0822

Legend: XX...X Customer-specific information

Y

Year code (last digit of calendar year)

YY

WW

NNN

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

e

3

Pb-free JEDEC designator for Matte Tin (Sn)

*

This package is Pb-free. The Pb-free JEDEC designator (

can be found on the outer packaging for this package.

)

e3

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

DS22063B-page 23

MCP1631/HV/MCP1631V/VHV

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DS22063B-page 24

MCP1631/HV/MCP1631V/VHV

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DS22063B-page 25

MCP1631/HV/MCP1631V/VHV

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DS22063B-page 26

MCP1631/HV/MCP1631V/VHV

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DS22063B-page 27

MCP1631/HV/MCP1631V/VHV

NOTES:

DS22063B-page 28

MCP1631/HV/MCP1631V/VHV

APPENDIX A: REVISION HISTORY

Revision B (October 2008)

The following is the list of modifications:

1. Section 2.0 “Typical Performance Curves”,

Input Offset Voltage: changed minimum, typical,

maximum from -0.6, -, +0.6 to -5, -0.6, +5,

respectively;

2. Updated Section 6.0 “Packaging Informa-

tion”;

3. Updated the Product Identification System.

Revision A (October 2007)

• Original Release of this Document.

DS22063B-page 29

MCP1631/HV/MCP1631V/VHV

NOTES:

DS22063B-page 30

MCP1631/HV/MCP1631V/VHV

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

Device

-XXX

X

/XX

Examples:

Voltage Temperature

Options

Package

a) MCP1631-E/ML:

High-Speed PWM,

20LD QFN package.

High-Speed PWM,

20LD SSOP package.

High-Speed PWM,

20LD TSSOP package.

Range

b) MCP1631-E/SS:

c) MCP1631-E/ST:

Device

MCP1631:

MCP1631T:

High-Speed PWM

Tape and Reel

MCP1631HV: High-Speed PWM

MCP1631HVT: High-Speed PWM

Tape and Reel

MCP1631HV: High-Speed PWM

MCP1631HVT: High-Speed PWM

Tape and Reel

a) MCP1631HV-330E/SS:High Speed PWM,

Current Mode Control,

3.3V Internal Regulator,

20LD SSOP Package.

b) MCP1631HV-500E/SS: High Speed PWM,

Current Mode Control,

MCP1631VHV: High-Speed PWM

MCP1631VHVT:High-Speed PWM

Tape and Reel

5.0V Internal Regulator,

20LD SSOP Package.

c) MCP1631HV-500E/ST:High Speed PWM,

Current Mode Control,

Voltage options

330

500

=

3.3V

5.0V

5.0V Internal Regulator,

20LD TSSOP Package.

Temperature Range

Package

E

=

-40°C to +125°C

a) MCP1631VHVT-500E/ST:High Speed PWM,

Voltage Mode Control,

ML

SS

ST

=

Plastic Quad Flat, No Lead (4x4x0.9), 20-lead

Plastic Shrink Small Outline (5.30 mm), 20-lead

Plastic Thin Shrink Small Outline (4.4 mm),

20-Lead

5.0V Internal Regulator,

20LD TSSOP Package.

b) MCP1631VHV-330E/SS: High Speed PWM,

Voltage Mode Control,

* All package offerings are Pb Free (Lead Free)

3.3V Internal Regulator,

20LD SSOP Package.

c) MCP1631VHV-330E/ST:High Speed PWM,

Voltage Mode Control,

3.3V Internal Regulator,

20LD TSSOP Package.

DS22063B-page 31

MCP1631/HV/MCP1631V/VHV

NOTES:

DS22063B-page 32

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,

PICSTART, rfPIC, SmartShunt and UNI/O are registered

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

FilterLab, Linear Active Thermistor, MXDEV, MXLAB,

SEEVAL, SmartSensor and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, In-Circuit Serial

Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB

Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,

PICDEM.net, PICtail, PIC³²logo, PowerCal, PowerInfo,

PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total

Endurance, WiperLock and ZENA are trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^®MCUs and dsPIC^®DSCs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

DS22063B-page 33

WORLDWIDE SALES AND SERVICE

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-4182-8400

Fax: 91-80-4182-8422

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-2566-1512

Fax: 91-20-2566-1513

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Japan - Yokohama

Tel: 81-45-471- 6166

Fax: 81-45-471-6122

China - Beijing

Tel: 86-10-8528-2100

Fax: 86-10-8528-2104

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

Boston

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Korea - Seoul

China - Hong Kong SAR

Tel: 852-2401-1200

Fax: 852-2401-3431

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Detroit

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

China - Shenzhen

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

Taiwan - Hsin Chu

Tel: 886-3-572-9526

Fax: 886-3-572-6459

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Kaohsiung

Tel: 886-7-536-4818

Fax: 886-7-536-4803

Santa Clara

Santa Clara, CA

Tel: 408-961-6444

Fax: 408-961-6445

China - Xiamen

Tel: 86-592-2388138

Fax: 86-592-2388130

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

01/02/08

DS22063B-page 34


型号：	MCP1631VT-E/SS
厂家：	MICROCHIP
描述：	SWITCHING CONTROLLER, 2000 kHz SWITCHING FREQ-MAX, PDSO20, 5.30 MM, LEAD FREE, PLASTIC, SSOP-20 开关光电二极管
文件：	总34页 (文件大小：565K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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