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MCP1632-BAE/MS [MICROCHIP]

SWITCHING CONTROLLER;
MCP1632-BAE/MS
型号： MCP1632-BAE/MS
厂家： MICROCHIP    MICROCHIP
描述：

SWITCHING CONTROLLER

PC 开关 软启动 光电二极管
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MCP1632  
High-Speed, Low-Side PWM Controller  
Features:  
Description:  
• High-Speed PWM Controller with Integrated  
Low-Side MOSFET Driver  
The MCP1632 high-speed PWM controller is a  
pulse-width modulator developed for stand-alone power  
supply applications. The MCP1632 includes  
a
• Multiple Switching Frequency Options (fSW):  
- 300 kHz  
high-speed analog control loop, a logic-level MOSFET  
driver, an internal oscillator, a reference voltage  
generator, and internal slope compensation. This high  
level of integration makes it an ideal solution for  
standalone SMPS applications. MCP1632 is suitable for  
use in topologies requiring a low-side MOSFET control,  
such as Boost, Flyback, SEPIC, Ćuk, etc. Typical  
applications include battery chargers, intelligent power  
systems, brick DC-DC converters, LED drivers. Due to  
its low power consumption, the MCP1632 PWM  
controller is recommended for battery-operated  
applications.  
- 600 kHz  
• Adjustable Reference Voltage Generator  
• Adjustable Soft Start  
• Internal Slope Compensation  
• Shutdown Input Pin (EN)  
• Low Operating Current: < 5 mA (typical)  
• Undervoltage Lockout (UVLO) Protection  
• Output Short Circuit Protection  
• Overtemperature Protection  
• Operating Temperature Range:  
- -40°C to +125°C  
The MCP1632 offers a Peak Current mode control in  
order to achieve consistent performance regardless of  
the topology of the power train or the operating  
conditions. In addition, the MCP1632 can implement  
the Voltage Mode Control for cost-sensitive solutions.  
Applications:  
• Switch Mode Power Supplies  
• Brick DC-DC Converters  
• Battery Charger Applications  
• LED Drivers  
The MCP1632 PWM controller can be easily interfaced  
with PIC microcontrollers in order to develop an  
intelligent power solution.  
Additional features include: UVLO, overtemperature  
and overcurrent protection, shutdown capability (EN  
pin) and an adjustable soft start option.  
Related Literature:  
• “MCP1632 300 kHz Boost Converter Demo Board  
User’s Guide”, Microchip Technology Inc.,  
DS20005252A, 2013  
Package Type  
8-Lead DFN  
8-Lead MSOP  
(2 mm x 3 mm)  
COMP  
1
2
3
4
8
7
6
5
VREF  
Vin  
V
8
1
2
3
4
COMP  
FB  
REF  
IN  
FB  
CS  
7 V  
EP  
9
VEXT  
GND  
CS  
EN  
6
V
EXT  
5 GND  
EN  
2013 Microchip Technology Inc.  
DS20005254A-page 1  
MCP1632  
Functional Block Diagram  
VIN  
VIN  
Shutdown  
Circuit  
UVLO  
EN  
SS Reset  
Overtemperature  
CLK  
Oscillator  
300/600 kHz  
VEXT  
10 k:  
VDRIVE  
S
R
Q
Q
RAMP  
6 k:  
+1  
GND  
VIN  
CS  
Blanking  
100 ns  
CS  
+
-
PWM  
Comp  
COMP  
FB  
Latch Truth Table  
VIN  
EA  
S
Q
R
0
1
0
-
2R  
0
0
1
Qn  
1
+
2.7V  
R
0
VIN  
Reference  
Voltage  
1
1
1
50 μA  
VREF  
SS Reset  
DS20005254A-page 2  
2013 Microchip Technology Inc.  
 
MCP1632  
Typical Application Circuit – Peak Current Mode Control  
VIN  
VOUT  
VCC  
VREF  
VEXT  
EN  
MCP1632  
CS  
CSS  
RR  
COMP  
FB  
GND  
Typical Application Circuit – Voltage Mode Control  
VIN  
VOUT  
VCC  
VREF  
VEXT  
EN  
MCP1632  
CS  
CSS  
RR  
COMP  
FB  
GND  
2013 Microchip Technology Inc.  
DS20005254A-page 3  
 
MCP1632  
† Notice: Stresses above those listed under “Maximum  
Ratings” may cause permanent damage to the device.  
This is a stress rating only and functional operation of  
the device at those or any other conditions above those  
indicated in the operational listings of this specification  
is not implied. Exposure to maximum rating conditions  
for extended periods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings †  
V
...................................................................................6.0V  
DD  
Maximum Voltage on Any Pin . (V  
– 0.3)V to (V + 0.3)V  
IN  
GND  
V
Short Circuit Current ...........................Internally Limited  
EXT  
Storage Temperature.....................................-65°C to +150°C  
Maximum Junction Temperature, T ...........................+150°C  
J
Continuous Operating Temperature Range ..-40°C to +125°C  
ESD protection on all pins, HBM2 kV  
AC/DC CHARACTERISTICS  
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 300 kHz, CIN = 0.1 µF,  
VIN for typical values = 5.0V, TA = -40°C to +125°C.  
Parameters  
Input Voltage  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
Input Operating Voltage  
Input Quiescent Current  
Input Shutdown Current  
EN Input  
VIN  
3.0  
—
—
5
5.5  
7.5  
2
V
I(VIN)  
mA  
µA  
IEXT = 0 mA  
I(VIN)SHDN  
—
—
EN = 0V  
EN Input Voltage Low  
EN Input Voltage High  
Delay Time  
ENLOW  
ENHIGH  
—
—
75  
—
—
—
0.8  
—
V
% of VIN  
µs  
190  
40  
210  
60  
EN goes from low to high (Note 1)  
EN goes from high to low (Note 1)  
µs  
Internal Oscillator  
Internal Oscillator Range  
FOSC  
250  
510  
300  
600  
350  
690  
kHz  
Two options  
Refer to Section 4.8 “Internal  
Oscillator”.  
Reference Voltage Section  
Reference Voltage  
Input Range  
VREF  
0
—
VIN  
52  
V
Note 1  
Refer to Section 4.7 “Reference  
Voltage Generator” for details.  
Internal Constant Current  
Generator  
IREF  
48  
50  
µA  
Refer to Section 4.7 “Reference  
Voltage Generator” for details.  
Error Amplifier  
Input Offset Voltage  
Error Amplifier  
VOS  
-4  
0.1  
80  
+4  
—
mV  
dB  
PSRR  
65  
VIN = 3.0V to 5.0V, VCM = 1.2V  
(Note 1)  
Common-Mode Input Range  
VCM  
GND - 0.3  
60  
—
VIN  
—
V
Note 1  
Common-Mode  
Rejection Ratio  
CMRR  
80  
dB  
VIN = 5V, VCM = 0V to 2.5V  
(Note 1)  
Open-Loop Voltage Gain  
AVOL  
80  
95  
—
dB  
RL = 5 kto VIN/2,  
100 mV < VEAOUT < VIN - 100 mV,  
V
CM = 1.2V (Note 1)  
RL = 5 kto VIN/2  
VIN = 5V (Note 1)  
Low-Level Output  
VOL  
GBWP  
ISINK  
—
3.5  
4
25  
5
50  
—
—
mV  
MHz  
mA  
Gain Bandwidth Product  
Error Amplifier Sink Current  
8
VIN = 5V, VREF = 1.2V,  
VFB = 1.4V, VCOMP = 2.0V  
Note 1: Ensured by design. Not production tested.  
DS20005254A-page 4  
2013 Microchip Technology Inc.  
 
MCP1632  
AC/DC CHARACTERISTICS (CONTINUED)  
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 300 kHz, CIN = 0.1 µF,  
IN for typical values = 5.0V, TA = -40°C to +125°C.  
V
Parameters  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
Error Amplifier  
Source Current  
ISOURCE  
4
6
—
mA  
VIN = 5V, VREF = 1.2V,  
VFB = 1.0V, VCOMP = 2.0V,  
Absolute Value  
Current Sense Input  
Maximum Current Sense  
Signal  
VCS_MAX  
0.8  
0.9  
0.97  
V
Set by maximum error amplifier  
clamp voltage, divided by 3  
(Note 1)  
Blanking Time  
TBLANK  
80  
—
100  
—
130  
35  
ns  
ns  
Note 1  
Delay from CS to VEXT  
TCS_VEXT  
Excluding the blanking time  
(Note 1)  
Current Sense Input Bias  
Current  
ICS_B  
—
-0.1  
—
µA  
Note 1  
PWM Section  
Minimum Duty Cycle  
DCMIN  
DCMAX  
—
—
0
%
%
VFB = VREF + 0.1V, VCS = GND  
(Note 1)  
Maximum Duty Cycle  
80  
85  
95  
Slope Compensation Ramp Generator  
Ramp Amplitude  
DC Offset Low  
DC Offset High  
VRAMP  
0.8  
0.15  
1.12  
5.5  
0.9  
0.32  
1.22  
6
1
VPP  
V
Refer to Section 4.6 “Slope  
Compensation” for details.  
—
0.45  
1.32  
6.5  
Refer to Section 4.6 “Slope  
Compensation” for details.  
—
V
Refer to Section 4.6 “Slope  
Compensation” for details.  
Ramp Generator Output  
Impedance  
ZRG  
k  
Refer to Section 4.6 “Slope  
Compensation” for details.  
Internal Driver  
RDSon P-channel  
RDSon_P  
RDSon_N  
TRISE  
—
—
—
10  
7
30  
30  
18  
RDSon N-channel  
VEXT Rise Time  
—
ns  
CL = 100 pF  
Typical for VIN = 3V (Note 1)  
VEXT Fall Time  
TFALL  
—
—
18  
ns  
CL = 100 pF  
Typical for VIN = 3V (Note 1)  
Protection Features  
Undervoltage Lockout  
UVLO  
2.6  
50  
—
2.9  
V
VIN falling,  
VEXT low state when in UVLO  
Undervoltage Lockout  
Hysteresis  
UVLOHYS  
110  
180  
mV  
Thermal Shutdown  
TSHD  
—
—
150  
20  
—
—
°C  
°C  
Note 1  
Note 1  
Thermal Shutdown  
Hysteresis  
TSHD_HYS  
Note 1: Ensured by design. Not production tested.  
2013 Microchip Technology Inc.  
DS20005254A-page 5  
MCP1632  
TEMPERATURE SPECIFICATIONS  
Electrical Specifications: VIN = 3.0V to 5.5V, FOSC = 600 kHz, CIN = 0.1 µF. TA = -40°C to +125°C.  
Parameters  
Sym.  
Min.  
Typ.  
Max. Units  
Conditions  
Temperature Ranges  
Operating Junction Temperature  
Range  
TA  
-40  
—
+125  
°C  
Steady state  
Storage Temperature Range  
Maximum Junction Temperature  
Thermal Package Resistances  
TA  
TJ  
-65  
—
—
—
+150  
+150  
°C  
°C  
Transient  
Thermal Resistance,  
8L-DFN (2 mm x 3 mm)  
JA  
JA  
—
—
75  
—
—
°C/W Typical 4-layer board with two  
interconnecting vias.  
Thermal Resistance, 8L-MSOP  
211  
°C/W Typical 4-layer board.  
DS20005254A-page 6  
2013 Microchip Technology Inc.  
MCP1632  
2.0  
TYPICAL PERFORMANCE CURVES  
Note:  
The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein  
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
Note: Unless otherwise noted, VIN = 5V, FOSC = 300 kHz, CIN = 0.1 µF, TA = 25°C.  
0.9  
EN = Low  
4.0  
2.0  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
fSW = 300 kHz  
0.0  
fSW = 600 kHz  
fSW = 300 kHz  
-2.0  
-4.0  
-6.0  
-8.0  
-10.0  
fSW = 600 kHz  
-50  
0
50  
100  
150  
2.5  
3.5  
4.5  
5.5  
Junction Temperature (°C)  
Input Voltage (V)  
FIGURE 2-1:  
Input Quiescent Current vs.  
FIGURE 2-4:  
Relative Oscillator  
Input Voltage (EN = Low).  
Frequency Variation vs. Junction Temperature.  
50.5  
50.4  
50.3  
50.2  
50.1  
50  
49.9  
49.8  
49.7  
49.6  
49.5  
8.0  
EN = High  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
fSW = 600 kHz  
fSW = 300 kHz  
2.5  
3.5  
4.5  
5.5  
2.5  
3.5  
4.5  
5.5  
Input Voltage (V)  
Input Voltage (V)  
FIGURE 2-2:  
Input Quiescent Current vs.  
FIGURE 2-5:  
VREF Current vs. Input  
Input Voltage (EN = High).  
Voltage.  
51  
50.8  
50.6  
50.4  
50.2  
50  
49.8  
49.6  
49.4  
49.2  
4.0  
2.0  
fSW = 300 kHz  
fSW = 600 kHz  
0.0  
-2.0  
-4.0  
-6.0  
-8.0  
-10.0  
49  
2.5  
3.5  
4.5  
5.5  
-50  
0
50  
100  
150  
Input Voltage (V)  
Junction Temperature (°C)  
FIGURE 2-3:  
Relative Oscillator  
FIGURE 2-6:  
V
REF Current vs. Junction  
Frequency Variation vs. Input Voltage.  
Temperature.  
2013 Microchip Technology Inc.  
DS20005254A-page 7  
MCP1632  
Note: Unless otherwise noted, VIN = 5V, FOSC = 300 kHz, CIN = 0.1 µF, TA = 25°C.  
0.2  
0.1  
5
4
3
2
NMOS Pair  
CLOAD = 100 pF  
0
-0.1  
-0.2  
-0.3  
-0.4  
-0.5  
PMOS Pair  
-50  
0
50  
100  
150  
2.5  
3.5  
4.5  
5.5  
Junction Temperature (°C)  
Input Voltage (V)  
FIGURE 2-7:  
Error Amplifier Offset  
FIGURE 2-10:  
VEXT Fall Time vs. Input  
Voltage vs. Temperature.  
Voltage.  
0.6  
0.4  
0.2  
0
45.0  
40.0  
35.0  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
NMOS Pair  
-0.2  
-0.4  
-0.6  
-0.8  
-1  
PMOS Pair  
0.0  
-5.0  
2.5  
2.5  
3.5  
4.5  
5.5  
3.5  
4.5  
5.5  
Input Voltage (V)  
Input Voltage (V)  
FIGURE 2-8:  
Error Amplifier Offset  
FIGURE 2-11:  
Relative VEXT N-Channel  
Voltage vs. Input Voltage.  
MOSFET RDSon Variation vs. Input Voltage.  
45.0  
40.0  
35.0  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
5
CLOAD = 100 pF  
4
3
2
0.0  
-5.0  
-10.0  
2.5  
3.5  
4.5  
5.5  
2.5  
3.5  
4.5  
Input Voltage (V)  
5.5  
Input Voltage (V)  
FIGURE 2-9:  
V
EXT Rise Time vs. Input  
FIGURE 2-12:  
Relative VEXT P-Channel  
Voltage.  
MOSFET RDSon Variation vs. Input Voltage.  
DS20005254A-page 8  
2013 Microchip Technology Inc.  
MCP1632  
Note: Unless otherwise noted, VIN = 5V, FOSC = 300 kHz, CIN = 0.1 µF, TA = 25°C.  
3.00  
2.95  
VIN Rising  
2.90  
2.85  
2.80  
2.75  
VIN Falling  
2.70  
2.65  
2.60  
-50  
0
50  
100  
150  
Junction Temperature (°C)  
FIGURE 2-13:  
UVLO Threshold vs.  
Temperature.  
25.0  
20.0  
15.0  
10.0  
5.0  
0.0  
-5.0  
-10.0  
-15.0  
-50  
0
50  
100  
150  
Junction Temperature (°C)  
FIGURE 2-14:  
Relative VEXT N-Channel  
MOSFET RDSon Variation vs. Junction  
Temperature.  
25.0  
20.0  
15.0  
10.0  
5.0  
0.0  
-5.0  
-10.0  
-15.0  
-50  
0
50  
100  
150  
Junction Temperature (°C)  
FIGURE 2-15:  
Relative VEXT P-Channel  
MOSFET RDSon Variation vs. Junction  
Temperature.  
2013 Microchip Technology Inc.  
DS20005254A-page 9  
MCP1632  
NOTES:  
DS20005254A-page 10  
2013 Microchip Technology Inc.  
MCP1632  
3.0  
PIN DESCRIPTIONS  
The descriptions of the pins are listed in Table 3-1.  
TABLE 3-1:  
DFN/MSOP  
PIN FUNCTION TABLE  
Name  
Function  
1
2
3
4
5
6
7
8
9
COMP  
FB  
Error Amplifier Output  
Error Amplifier Inverting Input  
Current Sense Input  
Enable Input  
CS  
EN  
GND  
VEXT  
VIN  
Circuit Ground  
External Driver Output  
Input Bias  
VREF  
EP  
Reference Voltage Input/Internal Constant Current Generator Output  
Exposed Thermal Pad (EP); must be connected to GND  
sub-harmonic oscillations. The amplitude of the slope  
compensation ramp is adjustable with one external  
resistor.  
3.1  
Error Amplifier Output (COMP)  
COMP is the internal error amplifier output pin. External  
compensation is connected from the FB pin to the  
COMP pin for control-loop stabilization. Type II or III  
compensation networks must be used depending on  
the application. An internal voltage clamp is used to  
limit the maximum COMP pin voltage to 2.7V (typical).  
This clamp is used to set the maximum peak current in  
the power system switch by setting a maximum limit on  
the CS input for Peak Current Mode control systems.  
If this pin is left open, the PWM Controller will operate  
in Voltage Mode Control. In this mode, the external  
switching MOSFET transistor is not protected against  
overcurrent conditions. Certain limitations related to the  
stability of the closed-loop system must be taken into  
account by the designer when the part operates in  
Voltage Mode Control. Refer to Section 5.2  
“Operation in Voltage Mode Control” for details  
about the operation in Voltage Mode Control.  
3.2  
Error Amplifier Inverting Input  
(FB)  
3.4  
Enable Input (EN)  
FB is the internal error amplifier inverting input pin. The  
output (voltage or current) is sensed and fed back to  
the FB pin for regulation. Inverting or negative  
feedback is used.  
When this pin is connected to GND (logic “Low”) for  
more than 50 µs (typical), the chip will go into  
Shutdown state. A logic “High” enables the normal  
operation of the MCP1632 device. When the device is  
disabled, the VEXT output is held low. Do not let the EN  
pin float. If not used, connect EN to VIN through a 10 k  
resistor.  
3.3  
Current Sense Input (CS)  
This is the input for the switch current used for Peak  
Current Mode control. A blanking period of 100 ns  
(typical) for CS signal is provided to avoid leading edge  
spikes that can cause false PWM reset. The normal  
PWM duty cycle will be terminated when the voltage on  
the CS pin (including the slope compensation ramp) is  
equal to the output of the error amplifier divided by 3.  
For Current Mode operation, the CS pin will control the  
PWM output on a cycle-by-cycle basis. The internal  
error amplifier output is clamped to 2.7V (nominal) and  
divided by 3, so the maximum voltage of the CS pin is  
0.9V. By limiting the inverting pin of the high-speed  
comparator to 0.9V, a current sense limit is established  
for all input bias voltage conditions (cycle-by-cycle  
overcurrent protection). To avoid the instability of the  
Peak Current Mode control when the duty cycle is  
3.5  
Circuit Ground (GND)  
Connect the circuit ground to the GND pin. For most  
applications, this should be connected to the analog  
(quiet) ground plane. Effort should be made to  
minimize the noise on this ground, as it can adversely  
affect the cycle-by-cycle comparison between the CS  
input and the error amplifier output.  
3.6  
External Driver Output (V  
)
EXT  
VEXT is the internal MOSFET driver output pin, used to  
drive the external transistor. For high-power or high-side  
drives, this output should be connected to the logic-level  
input of an appropriate MOSFET driver. For low-power,  
low-side applications, the VEXT pin can be used to  
directly drive the gate of an N-channel MOSFET.  
higher than 50%,  
a slope compensation ramp  
generator is internally provided. This circuit will add to  
the CS signal an artificially generated ramp to avoid  
2013 Microchip Technology Inc.  
DS20005254A-page 11  
 
MCP1632  
3.7  
Input Bias (V )  
IN  
VIN is the input voltage pin. Connect the input voltage  
source to the VIN pin. For normal operation, the voltage  
on the VIN pin should range from +3.0V to +5.5V. A  
bypass capacitor of at least 0.1 µF should be  
connected between the VIN pin and the GND pin. This  
decoupling capacitor must be located as close as  
possible to the controller package.  
3.8  
Reference Voltage Input/Internal  
Constant Current Generator  
Output (V  
)
REF  
This pin is the output of the internal Constant Current  
Generator (50 µA typical). An external resistor must be  
connected between this pin and GND. The current  
flowing in this resistor will set the reference voltage.  
Optionally, a capacitor may also be connected between  
this pin and GND to set the soft start ramp behavior.  
This pin may be overdriven by an external voltage  
source, enabling the reference voltage to be controlled  
externally. Refer to Section 4.7 “Reference Voltage  
Generator” for details.  
DS20005254A-page 12  
2013 Microchip Technology Inc.  
MCP1632  
CLK signal is high, the VEXT drive pin is low, turning off  
the external power train switch. The next switching  
cycle will start on another transition of the CLK signal  
from high to low.  
4.0  
4.1  
DETAILED DESCRIPTION  
Device Overview  
The MCP1632 device is comprised of an internal  
oscillator, an internal constant current generator, a  
high-speed comparator, a high-bandwidth amplifier, an  
internal ramp generator for slope compensation and  
logic gates, and is intended to be used to develop a  
stand-alone switch-mode power supply. There are two  
(orderable) switching frequency options for this device:  
300 kHz or 600 kHz. Refer to Functional Block  
Diagram for details about the internal functional blocks.  
4.4  
Error Amplifier/Comparator  
Current Limit Function  
The internal amplifier is used to create an error output  
signal that is determined by the VREF input pin and the  
power supply output voltage fed back into the FB pin.  
The error amplifier output is rail-to-rail and is clamped  
by a precision 2.7V internal voltage source. The output  
of the error amplifier is then divided down 3:1 and  
connected to the inverting input of the high-speed  
comparator. The maximum output of the error amplifier  
is 2.7V, so the maximum input to the inverting pin of the  
high-speed comparator is 0.9V. As the output load  
current demand increases, the error amplifier output  
increases too, causing the inverting input pin of the  
high-speed comparator to increase. Eventually, the  
output of the error amplifier will hit the 2.7V clamp,  
limiting the input of the high-speed comparator to 0.9V  
maximum. Even if the FB input continues to decrease,  
calling for more current, the inverting input is limited to  
0.9V. By limiting the inverting input to 0.9V, the current  
sense (CS) input is limited to 0.9V, thus limiting the  
current that flows in the main switch. Limiting the  
maximum peak current in the switch prevents the  
destruction of the semiconductor device and the  
saturation of the inductor during overloads. The resistor  
divider placed at the output of the error amplifier  
decreases the gain of the control loop by 9.5 dB. The  
designer must take into account this gain reduction  
during the compensation loop process. The error  
amplifier is rail-to-rail at the input and the  
common-mode range includes the GND and VIN  
potentials.  
4.2  
PWM Circuitry  
MCP1632 implements a typical Peak Current Mode  
control loop. The VEXT output of the MCP1632 device  
is determined by the output level of the internal  
high-speed comparator and the level of the internal  
CLK signal. When the CLK signal level is high, the  
PWM output (VEXT) is forced low, limiting the maximum  
duty cycle to approximately 85% (typical). When the  
CLK signal is low, the PWM output is determined by the  
output level of the internal high-speed comparator.  
During UVLO, the VEXT pin is held in low state. During  
overtemperature operation, the VEXT pin is  
high-impedance (10 kto ground, typical).  
4.3  
Normal Cycle-by-Cycle Control  
The beginning of a PWM cycle is defined by the internal  
CLK signal (a transition from high to low). Refer to  
Figure 4-1 for the detailed timing operation of the  
MCP1632 PWM controller.  
For normal operation, the state of the high-speed  
comparator output (R) is low and the Q output of the  
latch is low. On the high-to-low transition of the CLK  
signal, the SR inputs to the high-speed latch are both  
low and the Q output will remain unchanged (low). The  
output of the OR gate (VDRIVE) will transition from high  
to low, turning on the P-Channel drive transistor in the  
output stage of the PWM. This will change the PWM  
output (VEXT) from low to high, turning on the power  
train MOSFET and ramping current in the power train  
magnetic device. The sensed current in the magnetic  
device is fed into the CS input, shown as a ramp, and  
increases linearly until it reaches the same level as the  
divided down output of the error amplifier at the  
non-inverting input of the high-speed comparator. The  
comparator output (R) changes state (low to high) and  
resets the PWM latch. The Q output transition from low  
to high turns off the VEXT drive to the external MOSFET  
driver, thus terminating the current conduction cycle.  
The CLK signal will transition from low to high while the  
VEXT pin remains unchanged. If the CS input pin never  
reaches the same level as the error amplifier output,  
the low-to-high transition on the CLK signal terminates  
the current switching cycle. This would be considered  
as the maximum duty cycle. In either case, while the  
4.5  
0% Duty Cycle Operation  
The duty cycle of the VEXT output is capable of  
reaching 0% when the FB pin (inverting error amplifier)  
is held higher than the voltage present on the VREF  
(Reference Voltage) pin. This is accomplished by the  
rail-to-rail output capability of the error amplifier and the  
offset voltage of the high-speed comparator. The  
minimum error amplifier output voltage, divided by 3, is  
less than the offset voltage of the high-speed  
comparator. In case the output voltage of the converter  
is above the desired regulation point, the FB input will  
be above the VREF input and the error amplifier will be  
pulled to the bottom rail (GND). This low voltage is  
divided down 3:1 by the 2R and 1R resistor, and is  
connected to the input of the high-speed comparator.  
This voltage will be low enough so that there is no  
triggering of the comparator, allowing narrow pulse  
widths at VEXT  
.
2013 Microchip Technology Inc.  
DS20005254A-page 13  
MCP1632  
CLK  
/S  
Ramp  
Signal  
EA Out  
ISENSE  
R/  
Comp  
Out  
Q
VDRIVE  
VEXT  
FIGURE 4-1:  
PWM Timing Diagram.  
4.6  
Slope Compensation  
In order to prevent sub-harmonic oscillations that occur  
when a Peak Current Mode converter exceeds a 50%  
duty cycle, the MCP1632 provides an internal ramp  
generator that can be used for slope compensation.  
Refer to Figure 4-2 for details about the slope  
generator circuit. The amplitude of the generated ramp  
signal is 0.9 VPP (typical) and the DC offset value is  
770 mV (typical). The impedance of the internal ramp  
generator (RG) is 6 ktypical. The amplitude of the  
slope compensation ramp can be adjusted by  
modifying the value of the RSLOPE resistor. Refer to  
Figure 4-3 for details about the slope compensation  
ramp signal applied to CS pin. The parameters of the  
slope compensation ramp signal can be calculated with  
the provided equations.  
Oscillator  
300/600 kHz  
L
Ramp  
+1  
0.9 VPP  
VEXT  
CS  
Q
RG  
6 kꢀ  
RSLOPE  
To PWM  
Comparator  
CFILTER  
(Optional)  
RSENSE  
The MCP1632 device is equipped with a blanking  
circuit for the CS pin in order to prevent any false resets  
of the RS latch due to noise. However, for certain  
applications, it is recommended to place a small value  
capacitor (CFILTER) between the CS pin and GND to  
provide additional filtering for the current sense signal.  
The recommended value ranges from 10 pF to 30 pF.  
Use caution, because a higher value may affect the  
slope compensation ramp.  
FIGURE 4-2:  
Circuit.  
Slope Compensation  
DS20005254A-page 14  
2013 Microchip Technology Inc.  
 
MCP1632  
Amplitude (V)  
Amplitude (V)  
DCHIGH  
VIN  
VREF  
0.9*VREF  
50 μA  
Slope  
(V)  
VREF  
RVREF  
VREF  
CSS  
DCLOW  
Time(s)  
Time  
R
SLOPE  
SlopeV = 0.9V --------------------------------------  
PP  
PP  
R
+ R  
SLOPE  
R
G
V
V  
REF  
R
= -----------------------  
VREF  
50A  
SLOPE  
DC  
DC  
V= 0.32V--------------------------------------  
LOW  
R
+ R  
SLOPE  
G
ts  
C
F= ------------------------------------------  
SS  
2.3 R  
  
R
VREF  
SLOPE  
V= 1.22V-------------------------------------  
HIGH  
R
+ R  
SLOPE  
G
FIGURE 4-4:  
Reference Voltage  
Generator.  
FIGURE 4-3:  
Slope Compensation Signal  
(CS) Pin.  
4.8  
Internal Oscillator  
The MCP1632 PWM controller provides two  
(orderable) switching frequency options: 300 kHz and  
600 kHz.  
4.7  
Reference Voltage Generator  
The internal precision constant current generator and  
an external resistor connected between the VREF pin  
and GND form the reference voltage generator. Refer  
4.9  
Undervoltage Lockout (UVLO)  
to Figure 4-4 for details. Optionally, a capacitor (CSS  
)
can be connected in parallel with RVREF to activate the  
soft start function that will minimize overshoots of the  
output voltage during start-up. The equations in  
When the input voltage (VIN) is less than the UVLO  
threshold, the VEXT is held in low state. This will ensure  
that, if the voltage is not adequate to power the  
MCP1632 device, the main power supply switch will be  
held in off state. In order to prevent oscillations when  
the input voltage is near the UVLO threshold, the UVLO  
circuit offers 100 mV (typical) hysteresis. Typically, the  
MCP1632 device will not start until the input voltage at  
VIN is between 2.8V and 2.9V (typical).  
Figure 4-4 calculate the value of the resistor (RVREF  
)
for a given reference voltage and the value of the soft  
start capacitor (CSS) based on the necessary time to  
reach 90% of the final value for VREF. An internal circuit  
of the MCP1632 device will discharge the capacitor  
during the shutdown period. This capacitor must be of  
good quality, with low leakage currents, in order to  
avoid any errors that can affect the reference voltage.  
The reference voltage should not exceed 80% of the  
bias input voltage (VIN pin) in order to avoid any errors  
that affect the internal constant current generator.  
4.10 Overtemperature Protection  
To protect the VEXT output if shorted to VIN or GND, the  
VEXT output of the MCP1632 device will be  
high-impedance if the junction temperature is above  
the thermal shutdown threshold. An internal 10 k  
pull-down resistor is connected from VEXT to ground to  
provide some pull-down during overtemperature  
conditions. The protection is set to 150°C (typical), with  
a hysteresis of 20°C.  
An external low-noise, low-impedance source can be  
used to overdrive the VREF pin in order to control the  
reference voltage. In this case, the resistor/capacitor  
group connected to GND is not necessary, and the soft  
start profile must be controlled by the external  
reference voltage generator.  
2013 Microchip Technology Inc.  
DS20005254A-page 15  
 
 
MCP1632  
NOTES:  
DS20005254A-page 16  
2013 Microchip Technology Inc.  
MCP1632  
The Q1 MOSFET is protected against overcurrent by  
internally limiting the maximum voltage at the output of  
the error amplifier of the controller. If the voltage  
applied on the CS pin exceeds 0.9V, the MCP1632  
device will reduce the duty cycle in order to prevent  
overcurrent in Q1 MOSFET. The maximum drain peak  
current in Q1 can be calculated using Equation 5-1.  
The slope compensation ramp amplitude may limit the  
maximum peak current and must be considered when  
calculating this parameter. The DC offset of the slope  
compensation ramp (DCHIGH) is calculated using the  
equations provided in Figure 4-3.  
5.0  
5.1  
APPLICATION CIRCUITS  
Typical Applications  
The MCP1632 PWM controller can be used for  
applications that require low-side MOSFET control,  
such as Boost, Buck-Boost, Flyback, SEPIC or Ćuk  
converters. By using an external high-side MOSFET  
driver (e.g. MCP14628), the MCP1632 device is able to  
control the buck converter. The MCP1632 PWM  
controller can be easily interfaced with  
microcontroller in order to develop intelligent solutions,  
such as battery chargers or LED drivers.  
a
Note that the boost converter is not protected against  
the output short circuit.  
Figure 5-1 depicts the typical boost converter  
controlled by MCP1632. The input voltage applied on  
the VIN pin of the MCP1632 device should be kept  
below 5.5V. If the converter must operate with input  
voltages higher than 5.5V, a linear voltage regulator  
can be used to bias the MCP1632 controller. The Peak  
Current Mode control used in this case will ensure  
consistent performance over a wide range of operating  
conditions.  
EQUATION 5-1:  
0.9V – D DC  
V  
HIGH  
  
I
MaxA= -------------------------------------------------------------  
Peak  
R
SENSE  
+
VIN  
-
CIN  
L1  
LDO  
D1  
+
VOUT  
-
R3  
VIN  
R1  
VREF  
EN  
Q1  
VEXT  
CS  
COUT  
MCP1632  
RSLOPE  
CSS  
RVREF  
R2  
COMP  
FB  
RSENSE  
GND  
FIGURE 5-1:  
MCP1632 Boost Converter.  
2013 Microchip Technology Inc.  
DS20005254A-page 17  
 
 
MCP1632  
The single-ended primary inductor converter (SEPIC)  
used to drive an LED string is presented in Figure 5-2.  
This converter offers buck-boost functionality and is  
protected against the output short circuit. The inductors  
can share the same magnetic core (coupled inductors);  
in this case, the mutual inductance doubles the value of  
the inductor, reducing the ripple of the current. The LED  
string can be dimmed by driving the EN pin (PWM  
dimming) or by adjusting the value of the RVREF  
resistor (current dimming). The maximum allowable  
peak current into Q1 MOSFET can be calculated using  
Equation 5-1. The SEPIC converter exhibits poor  
dynamic performance and is recommended only for  
applications with low step response demands, like LED  
drivers or battery chargers.  
+
VIN  
-
CIN  
L1A  
LDO  
C1  
CC  
D1  
R1  
VIN  
COUT  
L1B  
VREF  
EN  
Q1  
VEXT  
CS  
C2  
MCP1632  
RSLOPE  
CSS  
RVREF  
COMP  
FB  
RSENSE  
RS  
C3 R2  
GND  
R3  
FIGURE 5-2:  
MCP1632 SEPIC Converter.  
DS20005254A-page 18  
2013 Microchip Technology Inc.  
 
A typical charger application for one- or two-cell Li-Ion batteries is presented in  
Figure 5-3. The PIC microcontroller handles all the necessary functions of the  
charger and the MCP1632 device controls the power train. Using the SEPIC  
converter allows developing a universal charger where the input voltage can be  
higher or lower than the battery voltage. The microcontroller can control the  
reference voltage across certain limits using its internal high-frequency PWM  
generator and the external circuit consisting of D2 and R1.  
This circuit can be replaced with a digital-to-analog converter (DAC) for a better  
range and accuracy of the reference voltage control. The charging current is  
monitored using a low-side shunt (RS) and an inverting amplifier. The floating  
voltage of the charger is controlled by MCP1632 and can be adjusted by varying  
the value of the RVREF resistor or the ratio of the feedback divider (R5, R6).  
Additional protection features can be implemented in the microcontroller’s  
firmware.  
+
VIN  
-
CIN  
L1A  
LDO  
C1  
CC  
D1  
VCC  
VIN  
VSENSE  
AN1  
EN  
R5  
R7  
I/O  
COUT  
L1B  
RS  
Battery  
Q1  
VEXT  
CS  
VREF  
PIC  
Micro  
VSENSE  
R1  
CSS  
C2  
MCP1632  
RSLOPE  
R6  
R8  
RVREF  
D2  
PWM  
AN2  
COMP  
FB  
RSENSE  
I/O  
C3 R2  
Status  
GND  
R3  
R4  
-
CSENSE  
+
FIGURE 5-3:  
Battery Charger Circuit.  
 
MCP1632  
Note that there is no inherent protection mechanism  
that can limit the inductor’s current during transients or  
overloads. A resistor placed between the CS pin and  
GND allows adjusting the maximum duty cycle by  
controlling the amplitude of the ramp signal. Refer to  
Figure 5-4 for details. If the RDC Adj resistor is not  
placed, the maximum duty cycle is set to approximately  
60% (typical). The duty cycle can be increased up to  
85% (typical) by adjusting the value of the RDC Adj  
resistor. The designer must limit the maximum  
operating duty cycle of the converter to a safe value by  
adjusting the value of this resistor. The DC offset of the  
ramp enables operation with 0% duty cycle if the output  
5.2  
Operation in Voltage Mode Control  
The MCP1632 PWM controller can operate in Voltage  
Mode Control using the internal slope compensation  
ramp to generate the PWM signal. The current sense  
resistor is not necessary for this application, thus the  
overall efficiency of the converter can be improved.  
Refer to Typical Application Circuit – Voltage Mode  
Control. Certain limitations occur in this operating  
mode. The compensation network for Voltage Mode  
Control must be of Type III, increasing the number of  
components.The closed-loop system is now a second  
order system and stability can be difficult to achieve  
over a wide range of operating conditions. The position  
of the dominant pole (double pole) in boost-derived  
converters varies with the operating conditions  
(input/output voltages); maintaining acceptable phase  
and gain margins across the entire operating range of  
the converter becomes a difficult task in this case.  
of the error amplifier divided by 3 is lower than DCLOW  
.
The Voltage Mode Control should be used only for  
systems with low input voltages, low DC conversion  
ratios and limited dynamics of the load (e.g., LED  
drivers or battery chargers).  
Oscillator  
300/600 kHz  
L
+
EA  
-
2R  
R
2.7V  
RAMP  
0.9 VPP  
+1  
VEXT  
CS  
Q
RG  
6 kꢀ  
-
PWM  
RDC Adj  
+
FIGURE 5-4:  
Voltage Mode Operation Details.  
DS20005254A-page 20  
2013 Microchip Technology Inc.  
 
MCP1632  
• Four-layer PCBs with internal ground plane offer  
the best performance for switch-mode power  
supplies. For cost-sensitive applications,  
two-layer PCBs can be used. In this case, the  
bottom layer must be used like a ground plane.  
5.3  
PCB Layout Recommendations  
The PCB layout is critical for switch-mode power  
supplies. When developing the PCB, the designer must  
follow the general rules for switching converters in  
order to achieve consistent performance. The  
guidelines include:  
• Use separate grounds for small-signal and power  
signals. These grounds must be connected (when  
possible) in a single point located near the GND  
pin of the MCP1632 controller.  
• Identify the high-current, high-frequency loops  
before starting the PCB design. Figure 5-5 depicts  
these loops for boost converters. I1 and I2 are the  
main currents of the boost converter. The IRR is  
the current produced by the reverse recovery of  
the output rectifier D1. The IRR current is an  
important source of noise/EMI.  
• Keep the current sense (CS) and feedback (FB)  
signals away from noisy nodes, such as the drain  
of the main switch (Q1).  
• Locate the compensation network components  
near the MCP1632 case.  
• Minimize the area of the high-current loops. Use  
copper planes or large traces for high-current  
connections in order to minimize the parasitic  
inductances.  
+
VIN  
-
I1  
CIN  
L1  
I2  
D1  
+
VOUT  
-
VIN  
Q1  
VREF  
EN  
IDR  
VEXT  
CS  
COUT  
MCP1632  
RSLOPE  
COMP  
FB  
IRR  
GND  
FIGURE 5-5:  
The Boost Converter’s Current Loops.  
2013 Microchip Technology Inc.  
DS20005254A-page 21  
 
MCP1632  
NOTES:  
DS20005254A-page 22  
2013 Microchip Technology Inc.  
MCP1632  
6.0  
6.1  
PACKAGING INFORMATION  
Package Marking Information  
8-Lead DFN (2x3x0.9 mm)  
Example  
Part Number  
Code  
MCP1632-AAE/MC  
MCP1632-BAE/MC  
MCP1632T-AAE/MC  
MCP1632T-BAE/MC  
ACD  
ACY  
ACD  
ACY  
ACD  
349  
25  
8-Lead MSOP (3x3 mm)  
Example  
1632AA  
349256  
Legend: XX...X Customer-specific information  
Y
Year code (last digit of calendar year)  
YY  
Year code (last 2 digits of calendar year)  
WW  
NNN  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
e
3
Pb-free JEDEC designator for Matte Tin (Sn)  
This package is Pb-free. The Pb-free JEDEC designator (  
can be found on the outer packaging for this package.  
*
)
e
3
Note: In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line, thus limiting the number of available  
characters for customer-specific information.  
2013 Microchip Technology Inc.  
DS20005254A-page 23  
MCP1632  
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DS20005254A-page 24  
2013 Microchip Technology Inc.  
MCP1632  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2013 Microchip Technology Inc.  
DS20005254A-page 25  
MCP1632  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20005254A-page 26  
2013 Microchip Technology Inc.  
MCP1632  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2013 Microchip Technology Inc.  
DS20005254A-page 27  
MCP1632  
8-Lead Plastic Micro Small Outline Package (UA) [MSOP]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20005254A-page 28  
2013 Microchip Technology Inc.  
MCP1632  
APPENDIX A: REVISION HISTORY  
Revision A (December 2013)  
• Original Release of this Document.  
2013 Microchip Technology Inc.  
DS20005254A-page 29  
MCP1632  
NOTES:  
DS20005254A-page 30  
2013 Microchip Technology Inc.  
MCP1632  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
Examples:  
PART NO.  
Device  
XX  
X
/XX  
a) MCP1632-AAE/MC: Extended temperature,  
8LD 2x3 DFN package  
Frequency  
Temperature  
Range  
Package  
b) MCP1632T-AAE/MC: Tape and Reel,  
Extended temperature,  
8LD 2x3 DFN package  
Device:  
MCP1632: High-speed, low-side PWM controller  
MCP1632T: High-speed, low-side PWM controller  
(Tape and Reel)  
c) MCP1632-BAE/MC: Extended temperature,  
8LD 2x3 DFN package  
d) MCP1632T-BAE/MC: Tape and Reel,  
Extended temperature,  
Frequency:  
AA  
BA  
=
=
300 kHz  
600 kHz  
8LD 2x3 DFN package  
Temperature Range:  
Package:  
E
=
-40°C to +125°C  
a) MCP1632-AAE/MS: Extended temperature,  
8LD MSOP package  
MC  
MS  
=
=
Plastic Dual Flat, No Lead – 2x3x0.9 mm body  
(DFN)  
Plastic Micro Small Outline  
b) MCP1632T-AAE/MS: Tape and Reel,  
Extended temperature,  
8LD MSOP package  
c) MCP1632-BAE/MS: Extended temperature,  
8LD MSOP package  
d) MCP1632T-BAE/MS: Tape and Reel,  
Extended temperature,  
8LD MSOP package  
2013 Microchip Technology Inc.  
DS20005254A-page 31  
MCP1632  
NOTES:  
DS20005254A-page 32  
2013 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is provided only for your convenience  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
MICROCHIP MAKES NO REPRESENTATIONS OR  
WARRANTIES OF ANY KIND WHETHER EXPRESS OR  
IMPLIED, WRITTEN OR ORAL, STATUTORY OR  
OTHERWISE, RELATED TO THE INFORMATION,  
INCLUDING BUT NOT LIMITED TO ITS CONDITION,  
QUALITY, PERFORMANCE, MERCHANTABILITY OR  
FITNESS FOR PURPOSE. Microchip disclaims all liability  
arising from this information and its use. Use of Microchip  
devices in life support and/or safety applications is entirely at  
the buyer’s risk, and the buyer agrees to defend, indemnify and  
hold harmless Microchip from any and all damages, claims,  
suits, or expenses resulting from such use. No licenses are  
conveyed, implicitly or otherwise, under any Microchip  
intellectual property rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, dsPIC,  
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,  
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash  
and UNI/O are registered trademarks of Microchip Technology  
Incorporated in the U.S.A. and other countries.  
32  
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,  
MTP, SEEVAL and The Embedded Control Solutions  
Company are registered trademarks of Microchip Technology  
Incorporated in the U.S.A.  
Silicon Storage Technology is a registered trademark of  
Microchip Technology Inc. in other countries.  
Analog-for-the-Digital Age, Application Maestro, BodyCom,  
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,  
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,  
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial  
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB  
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code  
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,  
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,  
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA  
and Z-Scale are trademarks of Microchip Technology  
Incorporated in the U.S.A. and other countries.  
SQTP is a service mark of Microchip Technology Incorporated  
in the U.S.A.  
GestIC and ULPP are registered trademarks of Microchip  
Technology Germany II GmbH & Co. KG, a subsidiary of  
Microchip Technology Inc., in other countries.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2013, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
ISBN: 978-1-62077-770-1  
QUALITY MANAGEMENT SYSTEM  
CERTIFIED BY DNV  
Microchip received ISO/TS-16949:2009 certification for its worldwide  
headquarters, design and wafer fabrication facilities in Chandler and  
Tempe, Arizona; Gresham, Oregon and design centers in California  
and India. The Company’s quality system processes and procedures  
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
== ISO/TS 16949 ==  
2013 Microchip Technology Inc.  
DS20005254A-page 33  
Worldwide Sales and Service  
AMERICAS  
ASIA/PACIFIC  
ASIA/PACIFIC  
EUROPE  
Corporate Office  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7200  
Fax: 480-792-7277  
Technical Support:  
http://www.microchip.com/  
support  
Asia Pacific Office  
Suites 3707-14, 37th Floor  
Tower 6, The Gateway  
Harbour City, Kowloon  
Hong Kong  
Tel: 852-2401-1200  
Fax: 852-2401-3431  
India - Bangalore  
Tel: 91-80-3090-4444  
Fax: 91-80-3090-4123  
Austria - Wels  
Tel: 43-7242-2244-39  
Fax: 43-7242-2244-393  
Denmark - Copenhagen  
Tel: 45-4450-2828  
Fax: 45-4485-2829  
India - New Delhi  
Tel: 91-11-4160-8631  
Fax: 91-11-4160-8632  
France - Paris  
Tel: 33-1-69-53-63-20  
Fax: 33-1-69-30-90-79  
India - Pune  
Tel: 91-20-3019-1500  
Australia - Sydney  
Tel: 61-2-9868-6733  
Fax: 61-2-9868-6755  
Web Address:  
www.microchip.com  
Japan - Osaka  
Tel: 81-6-6152-7160  
Fax: 81-6-6152-9310  
Germany - Dusseldorf  
Tel: 49-2129-3766400  
Atlanta  
Duluth, GA  
Tel: 678-957-9614  
Fax: 678-957-1455  
China - Beijing  
Tel: 86-10-8569-7000  
Fax: 86-10-8528-2104  
Germany - Munich  
Tel: 49-89-627-144-0  
Fax: 49-89-627-144-44  
Japan - Tokyo  
Tel: 81-3-6880- 3770  
Fax: 81-3-6880-3771  
China - Chengdu  
Tel: 86-28-8665-5511  
Fax: 86-28-8665-7889  
Austin, TX  
Tel: 512-257-3370  
Germany - Pforzheim  
Tel: 49-7231-424750  
Korea - Daegu  
Tel: 82-53-744-4301  
Fax: 82-53-744-4302  
Boston  
China - Chongqing  
Tel: 86-23-8980-9588  
Fax: 86-23-8980-9500  
Italy - Milan  
Tel: 39-0331-742611  
Fax: 39-0331-466781  
Westborough, MA  
Tel: 774-760-0087  
Fax: 774-760-0088  
Korea - Seoul  
Tel: 82-2-554-7200  
Fax: 82-2-558-5932 or  
82-2-558-5934  
China - Hangzhou  
Tel: 86-571-2819-3187  
Fax: 86-571-2819-3189  
Italy - Venice  
Tel: 39-049-7625286  
Chicago  
Itasca, IL  
Tel: 630-285-0071  
Fax: 630-285-0075  
Netherlands - Drunen  
Tel: 31-416-690399  
Fax: 31-416-690340  
Malaysia - Kuala Lumpur  
Tel: 60-3-6201-9857  
Fax: 60-3-6201-9859  
China - Hong Kong SAR  
Tel: 852-2943-5100  
Fax: 852-2401-3431  
Cleveland  
Independence, OH  
Tel: 216-447-0464  
Fax: 216-447-0643  
Poland - Warsaw  
Tel: 48-22-3325737  
Malaysia - Penang  
Tel: 60-4-227-8870  
Fax: 60-4-227-4068  
China - Nanjing  
Tel: 86-25-8473-2460  
Fax: 86-25-8473-2470  
Spain - Madrid  
Tel: 34-91-708-08-90  
Fax: 34-91-708-08-91  
Dallas  
Addison, TX  
Tel: 972-818-7423  
Fax: 972-818-2924  
Philippines - Manila  
Tel: 63-2-634-9065  
Fax: 63-2-634-9069  
China - Qingdao  
Tel: 86-532-8502-7355  
Fax: 86-532-8502-7205  
Sweden - Stockholm  
Tel: 46-8-5090-4654  
Singapore  
Tel: 65-6334-8870  
Fax: 65-6334-8850  
Detroit  
Novi, MI  
Tel: 248-848-4000  
China - Shanghai  
Tel: 86-21-5407-5533  
Fax: 86-21-5407-5066  
UK - Wokingham  
Tel: 44-118-921-5800  
Fax: 44-118-921-5820  
Taiwan - Hsin Chu  
Tel: 886-3-5778-366  
Fax: 886-3-5770-955  
Houston, TX  
Tel: 281-894-5983  
China - Shenyang  
Tel: 86-24-2334-2829  
Fax: 86-24-2334-2393  
Indianapolis  
Noblesville, IN  
Tel: 317-773-8323  
Fax: 317-773-5453  
Taiwan - Kaohsiung  
Tel: 886-7-213-7830  
China - Shenzhen  
Tel: 86-755-8864-2200  
Fax: 86-755-8203-1760  
Taiwan - Taipei  
Tel: 886-2-2508-8600  
Fax: 886-2-2508-0102  
Los Angeles  
China - Wuhan  
Tel: 86-27-5980-5300  
Fax: 86-27-5980-5118  
Mission Viejo, CA  
Tel: 949-462-9523  
Fax: 949-462-9608  
Thailand - Bangkok  
Tel: 66-2-694-1351  
Fax: 66-2-694-1350  
China - Xian  
Tel: 86-29-8833-7252  
Fax: 86-29-8833-7256  
New York, NY  
Tel: 631-435-6000  
San Jose, CA  
Tel: 408-735-9110  
China - Xiamen  
Tel: 86-592-2388138  
Fax: 86-592-2388130  
Canada - Toronto  
Tel: 905-673-0699  
Fax: 905-673-6509  
China - Zhuhai  
Tel: 86-756-3210040  
Fax: 86-756-3210049  
10/28/13  
DS20005254A-page 34  
2013 Microchip Technology Inc.  

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