MCP1754-3302E-CB 概述
150 mA, 16V, High Performance LDO 150毫安, 16V ,高性能LDO
MCP1754-3302E-CB 数据手册
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PDF下载MCP1754/MCP1754S
150 mA, 16V, High Performance LDO
Description
Features
• High PSRR: >70 dB @ 1 kHz typical
The MCP1754/MCP1754S is a family of CMOS low
dropout (LDO) voltage regulators that can deliver up to
150 mA of current while consuming only 56.0 µA of
quiescent current (typical). The input operating range is
specified from 3.6V to 16.0V, making it an ideal choice
for four to six primary cell battery-powered applications,
12V mobile applications and one- to three-cell Li-Ion-
powered applications.
• 56.0 µA Typical Quiescent Current
• Input Operating Voltage Range: 3.6V to16.0V
• 150 mA Output Current for All Output Voltages
• Low Drop Out Voltage, 300 mV Typical @ 150 mA
• 0.4% Typical Output Voltage Tolerance
• Standard Output Voltage Options (1.8V, 2.5V,
2.8V, 3.0V, 3.3V, 4.0V, 5.0V)
The MCP1754/MCP1754S is capable of delivering
150 mA with only 300 mV (typical) of input to output
voltage differential. The output voltage tolerance of the
MCP1754/MCP1754S is typically ±0.4% at +25°C and
±2.0% maximum over the operating junction
temperature range of -40°C to +125°C. Line regulation
is ±0.01% typical at +25°C.
• Output Voltage Range 1.8V to 5.5V in 0.1V
Increments (tighter increments also possible per
design)
• Output Voltage Tolerances of ±2.0% Over Entire
Temperature Range
• Stable with Minimum 1.0 µF Output Capacitance
• Power Good Output
Output voltages available for the MCP1754/MCP1754S
range from 1.8V to 5.5V. The LDO output is stable when
using only 1 µF of output capacitance. Ceramic,
tantalum or aluminum electrolytic capacitors may all be
used for input and output. Overcurrent limit and
overtemperature shutdown provide a robust solution for
any application.
• Shutdown Input
• True Current Foldback Protection
• Short-Circuit Protection
• Overtemperature Protection
Applications
The MCP1754/MCP1754S family introduces a true
current foldback feature. When the load impedance
decreases beyond the MCP1754/MCP1754S load
rating, the output current and voltage will gracefully
foldback towards 30 mA at about 0V output. When the
load impedance decreases and returns to the rated
load, the MCP1754/MCP1754S will follow the same
foldback curve as the device comes out of current
foldback.
• Battery-powered Devices
• Battery-powered Alarm Circuits
• Smoke Detectors
• CO2 Detectors
• Pagers and Cellular Phones
• Smart Battery Packs
• PDAs
Package options for the MCP1754S include the SOT-
23A, SOT-89-3, SOT-223-3 and 2x3 DFN-8.
• Digital Cameras
• Microcontroller Power
• Consumer Products
• Battery-powered Data Loggers
Package options for the MCP1754 include the SOT-23-
5, SOT-223-5, and 2x3 DFN-8.
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2007
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2003
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
© 2011 Microchip Technology Inc.
DS22276A-page 1
MCP1754/MCP1754S
Package Types - MCP1754S
SOT-223-3
8-Lead 2X3 DFN(*)
3-Pin SOT-89
3-Pin SOT-23A
GND
VIN
3
4
GND
2
V
V
IN
1
2
8
7
OUT
NC
NC
EP
9
NC
NC
3
4
6
5
GND
GND
1
2
3
1
2
3
1
2
Tab will be connected to GND
VIN
VIN
GNDVOUT
GND VOUT
GND VOUT
(Note: The 3-lead SOT-223 (DB) is not a
standard package for output voltages
below 3.0V)
* Includes Exposed Thermal Pad (EP); see Table 3-2.
Package Types - MCP1754
SOT23-5
SOT-223-5
8-Lead 2X3 DFN(*)
4
3
5
1
3
V
V
IN
1
2
8
7
OUT
PWRGD
NC
EP
9
NC
NC
3
4
6
5
GND
SHDN
2
1
2
3
4
5
Tab will be connected to GND
PIN FUNCTION
PIN FUNCTION
1
2
3
4
5
VIN
GND
/SHDN
PWRGD
VOUT
1
2
3
4
5
/SHDN
VIN
GND
VOUT
PWRGD
* Includes Exposed Thermal Pad (EP); see Table 3-1.
DS22276A-page 2
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
Functional Block Diagrams
MCP1754S
VOUT
VIN
Error Amplifier
+VIN
Voltage
Reference
-
+
Over Current
Over Temperature
GND
© 2011 Microchip Technology Inc.
DS22276A-page 3
MCP1754/MCP1754S
PMOS
MCP1754
VIN
VOUT
Undervoltage
Lock Out
Sense
(UVLO)
ISNS
Cf
Rf
SHDN
+
–
Driver w/limit
and SHDN
EA
Overtemperature
Sensing
SHDN
VREF
V
IN
Reference
SHDN
Soft-Start
PWRGD
Comp
TDELAY
GND
92% of VREF
Typical Application Circuits
+
CIN
12V
1 µF Ceramic
MCP1754S
VOUT
5.0V
IOUT
COUT
1 µF Ceramic
30 mA
DS22276A-page 4
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage, V ..................................................................+17.6V
IN
VIN, PWRGD, SHDN .....................(GND-0.3V) to (V +0.3V)
IN
VOUT .................................................. (GND-0.3V) to (+5.5V)
Internal Power Dissipation ............ Internally-Limited (Note 6)
Output Short Circuit Current .................................Continuous
Storage temperature .....................................-55°C to +150°C
Maximum Junction Temperature......................165°C(Note 7)
Operating Junction Temperature...................-40°C to +150°C
ESD protection on all pins..........≥ 4 kV HBM and ≥ 200V MM
AC/DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for V = V + 1V, Note 1, I
= 1 mA, C
=
IN
R
LOAD
OUT
1 µF (X7R), C = 1 µF (X7R), T = 25°C, t
= 0.5V/µs, SHDN = V , PWRGD = 10K to V
.
IN
A
r(VIN)
IN
OUT
Boldface type applies for junction temperatures, T (Note 7) of -40°C to +125°C.
J
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input / Output Characteristics
Input Operating Voltage
VIN
3.6
1.8
—
—
16.0
5.5
V
V
Output Voltage Operating
Range
VOUT-RANGE
Input Quiescent Current
Iq
—
—
56
90
5
µA
µA
IL = 0 mA
Input Quiescent Current
for SHDN mode
ISHDN
0.1
SHDN = GND
Ground Current
IGND
—
150
—
150
—
250
—
µA
mA
mA
ILOAD = 150 mA
Maximum Output Current
Output Soft Current Limit
IOUT_mA
IOUT_CL
250
—
VIN = VIN(MIN), VOUT ≥ 0.1V,
Current measured 10 ms after
load is applied
Output Pulse Current Limit
IOUT_CL
—
250
—
mA
mA
Pulse Duration < 100 ms, Duty
Cycle < 50%, VOUT ≥ 0.1V,
Note 6
Output Short Circuit
Foldback Current
IOUT_SC
VOVER
—
—
30
—
—
VIN = VIN(MIN), VOUT = GND
Output Voltage Overshoot
on Startup
0.5
%VOUT VIN = 0 to 16V, ILOAD = 150 mA
Note 1: The minimum V must meet two conditions: V ≥ 3.6V and V ≥ V + V
.
IN
IN
IN
R
DROPOUT(MAX)
2:
V
is the nominal regulator output voltage when the input voltage V = V
+ V
or Vi = 3.6V (which-
R
IN
Rated
DROPOUT(MAX) IN
ever is greater); I
= 1 mA.
- V
OUT
6
3: TCV
= (V
) *10 / (V * ΔTemperature), V
= highest voltage measured over the
OUT-HIGH
OUT
OUT-HIGH
OUT-LOW
R
temperature range. V
= lowest voltage measured over the temperature range.
OUT-LOW
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
.
OUT
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal V
measured value. The nominal VR measured value is obtained with
R
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T , T , θ ). Exceeding the maximum allowable power
A
J
JA
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
© 2011 Microchip Technology Inc.
DS22276A-page 5
MCP1754/MCP1754S
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V = V + 1V, Note 1, I
= 1 mA, C
=
IN
R
LOAD
OUT
1 µF (X7R), C = 1 µF (X7R), T = 25°C, t
= 0.5V/µs, SHDN = V , PWRGD = 10K to V
.
IN
A
r(VIN)
IN
OUT
Boldface type applies for junction temperatures, T (Note 7) of -40°C to +125°C.
J
Parameters
Sym
Min
Typ
Max
Units
Conditions
Output Voltage Regulation
VOUT
VR-
VR±0. VR+2.0
V
Note 2
2.0%
2%
22
%
VOUT Temperature
TCVOUT
—
ppm/°C Note 3
Coefficient
Line Regulation
ΔVOUT
/
-0.05
±0.01
+0.05
%/V
VR + 1V ≤ VIN ≤ 16V
(VOUTXΔVIN)
ΔVOUT/VOUT
VDROPOUT
IDO
Load Regulation
-1.1
—
-0.4
300
50
0
%
mV
µA
IL = 1.0 mA to 150 mA, Note 4
IL = 150 mA
Dropout Voltage (Note 5)
Dropout Current
500
85
—
VIN = 0.95VR, IOUT = 0 mA
Undervoltage Lockout
Undervoltage Lockout
UVLO
—
—
2.95
285
—
—
V
Rising VIN
Falling VIN
Undervoltage Lockout
Hysterisis
UVLOHYS
mV
Shutdown Input
Logic High Input
Logic Low Input
VSHDN-HIGH
VSHDN-LOW
SHDNILK
2.4
—
—
VIN(MAX)
V
V
0.0
0.8
Shutdown Input Leakage
Current
—
—
0.100
0.500
0.500
2.0
µA
SHDN = GND
SHDN = 16V
Power Good Output
PWRGD Input Voltage
Operating Range
VPWRGD_VIN
VPWRGD_TH
VPWRGD_HYS
VPWRGD_L
IPWRGD_L
1.7
90
—
—
92
2.0
0.2
—
VIN
94
V
ISINK = 1 mA
PWRGD Threshold Volt-
age (Referenced to VOUT
%VOUT Falling Edge of VOUT
%VOUT Rising Edge of VOUT
)
PWRGD Threshold
Hysteresis
—
PWRGD Output Voltage
Low
—
0.6
—
V
IPWRGD_SINK = 5.0 mA,
VOUT = 0V
PWRGD Output Sink
Current
5.0
—
mA
nA
VPWRGD ≤ 0.4V
PWRGD Leakage Current
IPWRGD_LK
40
700
VPWRGD Pullup = 10 KΩ to VIN,
VIN = 16V
Note 1: The minimum V must meet two conditions: V ≥ 3.6V and V ≥ V + V
.
IN
IN
IN
R
DROPOUT(MAX)
2:
V
is the nominal regulator output voltage when the input voltage V = V
+ V
or Vi = 3.6V (which-
R
IN
Rated
DROPOUT(MAX) IN
ever is greater); I
= 1 mA.
- V
OUT
6
3: TCV
= (V
) *10 / (V * ΔTemperature), V
= highest voltage measured over the
OUT-HIGH
OUT
OUT-HIGH
OUT-LOW
R
temperature range. V
= lowest voltage measured over the temperature range.
OUT-LOW
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
.
OUT
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal V
measured value. The nominal VR measured value is obtained with
R
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T , T , θ ). Exceeding the maximum allowable power
A
J
JA
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
DS22276A-page 6
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V = V + 1V, Note 1, I
= 1 mA, C
=
IN
R
LOAD
OUT
1 µF (X7R), C = 1 µF (X7R), T = 25°C, t
= 0.5V/µs, SHDN = V , PWRGD = 10K to V
.
IN
A
r(VIN)
IN
OUT
Boldface type applies for junction temperatures, T (Note 7) of -40°C to +125°C.
J
Parameters
Sym
Min
Typ
Max
Units
Conditions
Rising Edge of VOUT
PULLUP = 10 kΩ
PWRGD Time Delay
TPG
—
100
—
µs
,
R
Detect Threshold to
PWRGD Active Time
Delay
TVDET_PWRGD
—
—
200
240
—
—
µs
µs
Falling Edge of VOUT after
Transition from
VOUT = VPRWRGD_TH + 50 mV,
to VPWRGD_TH - 50 mV,
RPULLUP = 10kΩ to VIN
AC Performance
Output Delay From VIN To
VOUT = 90% VREG
TDELAY
VIN = 0V to 16V, VOUT = 90%
VR,
t
r (VIN)= 5V/µs,
COUT = 1 µF, SHDN = VIN
Output Delay From VIN To TDELAY_START
OUT > 0.1V
—
—
80
—
—
µs
µs
VIN = 0V to 16V, VOUT ≥ 0.1V,
tr (VIN)= 5V/µs,
COUT = 1 µF, SHDN = VIN
V
Output Delay From SHDN TDELAY_SHDN
160
VIN = 16V, VOUT = 90% VR,
C
OUT = 1 µF, SHDN = GND to
VIN
µV/(Hz)1/2 IL = 50 mA, f = 1 kHz,
OUT = 1 µF
Output Noise
eN
—
—
3
—
—
C
Power Supply Ripple
Rejection Ratio
PSRR
72
dB
VR = 5V, f = 1 kHz, IL =
150 mA,
VINAC = 1V pk-pk, CIN = 0 µF,
VIN = VR + 1.5V
Thermal Shutdown
Temperature
TSD
—
—
150
10
—
—
°C
°C
Note 6
Thermal Shutdown
Hysteresis
ΔTSD
Note 1: The minimum V must meet two conditions: V ≥ 3.6V and V ≥ V + V
.
IN
IN
IN
R
DROPOUT(MAX)
2:
V
is the nominal regulator output voltage when the input voltage V = V
+ V
or Vi = 3.6V (which-
R
IN
Rated
DROPOUT(MAX) IN
ever is greater); I
= 1 mA.
- V
OUT
6
3: TCV
= (V
) *10 / (V * ΔTemperature), V
= highest voltage measured over the
OUT-HIGH
OUT
OUT-HIGH
OUT-LOW
R
temperature range. V
= lowest voltage measured over the temperature range.
OUT-LOW
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
.
OUT
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal V
measured value. The nominal VR measured value is obtained with
R
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T , T , θ ). Exceeding the maximum allowable power
A
J
JA
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
© 2011 Microchip Technology Inc.
DS22276A-page 7
MCP1754/MCP1754S
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, SOT-223-3
TA
TJ
TA
-40
-40
-55
+125
+150
+150
°C
°C
°C
θJA
θJC
—
—
62
15
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
Thermal Resistance, SOT-223-5
Thermal Resistance, SOT-23A-3
Thermal Resistance, SOT-89-3
Thermal Resistance, 2X3 DFN
θJA
θJC
—
—
62
15
—
—
θJA
θJC
—
—
336
110
—
—
θJA
θJC
—
—
153.3
100
—
—
θJA
θJC
—
—
93
26
—
—
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T , T , θ ). Exceeding the maximum allowable power
A
J
JA
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DS22276A-page 8
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated V = 3.3V, C
= 1 µF Ceramic (X7R), C = 1 µF Ceramic (X7R), I = 1 mA, T = +25 °C,
OUT IN L A
R
V
= V + 1V or V = 3.6V (whichever is greater), SHDN = V , package = SOT223.
R IN IN
IN
Note:
Junction Temperature (T ) is approximated by soaking the device under test to an ambient temperature equal to the
J
desired Junction temperature. The test time is small enough such that the rise in Junction temperature over the ambient
temperature is not significant.
80
70
60
50
40
180
+90°C
160
140
120
100
80
+25°C
+130°C
0°C
VOUT = 5.0V
-45°C
VOUT = 3.3V
VOUT = 1.8V
VOUT = 1.8V
IOUT = 0 µA
60
40
3
4
5
6
7
8
9
10 11 12 13 14 15 16
0
20
40
60
80 100 120 140 160
Input Voltage (V)
Load Current (mA)
FIGURE 2-1:
Quiescent Current vs. Input
FIGURE 2-4:
Ground Current vs. Load
Voltage.
Current.
70
80
VOUT = 3.3V
OUT = 0 µA
VOUT = 5.0V
VOUT = 1.8V
I
70
60
50
40
30
20
10
0
65
60
55
50
45
40
+130°C
+90°C
+25°C
0°C
VOUT = 3.3V
-45°C
3
5
7
9
11
13
15
-45
-20
5
30
55
80
105 130
Input Voltage (V)
Junction Temperature (°C)
FIGURE 2-5:
Quiescent Current vs.
FIGURE 2-2:
Quiescent Current vs. Input
Junction Temperature.
Voltage.
80
80
70
60
50
40
30
20
10
VOUT = 5.0V
+130°C +90°C
VOUT = 5.0V
70 IOUT = 0 µA
60
50
40
30
20
10
0
+25°C
0°C
+25°C
-45°C
0
1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 17.0
Input Voltage (V)
18 16 14 12 10
8
6
4
2
0
Input Voltage (V)
FIGURE 2-6:
Voltage.
Quiescent Current vs. Input
FIGURE 2-3:
Voltage.
Quiescent Current vs. Input
© 2011 Microchip Technology Inc.
DS22276A-page 9
MCP1754/MCP1754S
Note:
Unless otherwise indicated V = 3.3V, C
= 1 µF Ceramic (X7R), C = 1 µF Ceramic (X7R), I = 1 mA, T = +25 °C,
R
OUT
IN
L
A
V
= V + 1V or V = 3.6V (whichever is greater), SHDN = V , package = SOT223.
IN
R
IN
IN
1.814
1.815
1.810
1.805
1.800
1.795
1.790
VOUT = 1.8V
VOUT = 1.8V
+90°C
25°C
+25°C
1.812
1.810
1.808
1.806
1.804
1.802
1.800
90°C
+130°C
0°C
0°C
130°C
-45°C
-45°C
3
4
5
6
7
8
9
10 11 12 13 14 15 16
0
25
50
75
100
125
150
Input Voltage (V)
Load Current (mA)
FIGURE 2-7:
Output Voltage vs. Input
FIGURE 2-10:
Output Voltage vs. Load
Voltage.
Current.
3.310
3.308
3.306
3.310
3.305
VOUT = 3.3V
VOUT = 3.3V
+90°C
25°C
+130°C
90°C
3.304
3.302
3.300
3.298
3.296
3.294
3.292
3.290
3.300
3.295
3.290
3.285
3.280
+25°C
0°C
-45°C
0°C
-45°C
130°C
4
5
6
7
8
9
10 11 12 13 14 15 16
0
25
50
75
100
125
150
Input Voltage (V)
Load Current (mA)
FIGURE 2-8:
Output Voltage vs. Input
FIGURE 2-11:
Output Voltage vs. Load
Voltage.
Current.
5.020
5.016
5.020
5.015
VOUT = 5.0V
VOUT = 5.0V
130°C
5.010
5.005
5.000
4.995
4.990
4.985
4.980
90°C
+130°C
+90°C
5.012
5.008
5.004
5.000
25°C
+25°C
-45°C
-45°C
0°C
0°C
6
7
8
9
10 11 12 13 14 15 16
Input Voltage (V)
0
25
50
75
100
125
150
Load Current (mA)
FIGURE 2-9:
Output Voltage vs. Input
FIGURE 2-12:
Output Voltage vs. Load
Voltage.
Current.
DS22276A-page 10
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
Note:
Unless otherwise indicated V = 3.3V, C
= 1 µF Ceramic (X7R), C = 1 µF Ceramic (X7R), I = 1 mA, T = +25 °C,
OUT IN L A
R
V
= V + 1V or V = 3.6V (whichever is greater), SHDN = V , package = SOT223.
IN
R
IN
IN
0.500
VOUT = 3.3V
0.400
0.300
0.200
0.100
0.000
+25°C
0°C
+90°C
+130°C
-45°C
0
15 30 45 60 75 90 105 120 135 150
Load Current (mA)
FIGURE 2-13:
Dropout Voltage vs. Load
FIGURE 2-16:
Dynamic Line Response.
Current.
50
40
30
20
10
0
0.400
0.350
0.300
0.250
0.200
0.150
0.100
0.050
0.000
0°C
25°C
90°C
130°C
VOUT = 3.3V
VOUT = 3.3V
+25°C
+90°C
-45°C
-45°C
+130°C
0°C
4
6
8
10
12
14
16
0
15 30 45 60 75 90 105 120 135 150
Load Current (mA)
Input Voltage (V)
FIGURE 2-17:
Input Voltage.
Short Circuit Current vs.
FIGURE 2-14:
Current.
Dropout Voltage vs. Load
FIGURE 2-15:
Dynamic Line Response.
© 2011 Microchip Technology Inc.
DS22276A-page 11
MCP1754/MCP1754S
Note:
Unless otherwise indicated V = 3.3V, C
= 1 µF Ceramic (X7R), C = 1 µF Ceramic (X7R), I = 1 mA, T = +25 °C,
R
OUT
IN
L
A
V
= V + 1V or V = 3.6V (whichever is greater), SHDN = V , package = SOT223.
IN
R
IN
IN
0.01
-0.50
-0.60
-0.70
-0.80
-0.90 VIN = 16V
-1.00
-1.10
-1.20
-1.30
-1.40
VOUT=1.8V
10 mA
V= 3.6V
VOUT=1.8V
0 mA
Iout = 1 mA to 150 mA
0.00
-0.01
-0.02
-0.03
VIN = 5V
VIN = 12V
50 mA
150 mA
VIN = 10V
100 mA
-1.50
-45
-20
5
30
55
80
105 130
-45
-20
5
30
55
80
105 130
Temperature (°C)
Temperature (°C)
FIGURE 2-18:
Load Regulation vs.
FIGURE 2-21:
Line Regulation vs.
Temperature.
Temperature.
0.00
0.01
0 mA
VOUT=3.3V
VOUT=3.3V
Iout = 1 mA to 150 mA
VIN = 4.3V
-0.20
-0.40
-0.60
-0.80
-1.00
0.00
VIN = 5V
VIN = 10V
10 mA
-0.01
50 mA
VIN = 16V
VIN = 12V
150 mA
-0.02
100 mA
105
-0.03
-45
-20
5
30
55
80
105 130
-45
-20
5
30
55
80
130
Temperature (°C)
Temperature (°C)
FIGURE 2-19:
Load Regulation vs.
FIGURE 2-22:
Line Regulation vs.
Temperature.
Temperature.
0.00
0.01
0 mA
VOUT=3.3V
VOUT=5V
Iout = 1 mA to 150 mA
VIN = 4.3V
-0.20
-0.40
-0.60
-0.80
-1.00
0.00
VIN = 5V
VIN = 10V
10 mA
-0.01
50 mA
VIN = 16V
VIN = 12V
150 mA
-0.02
-0.03
100 mA
105
-45
-20
5
30
55
80
105 130
-45
-20
5
30
55
80
130
Temperature (°C)
Temperature (°C)
FIGURE 2-20:
Temperature.
Load Regulation vs.
FIGURE 2-23:
Temperature.
Line Regulation vs.
DS22276A-page 12
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
Note:
Unless otherwise indicated V = 3.3V, C
= 1 µF Ceramic (X7R), C = 1 µF Ceramic (X7R), I = 1 mA, T = +25 °C,
R
OUT
IN
L
A
V
= V + 1V or V = 3.6V (whichever is greater), SHDN = V , package = SOT223.
R IN IN
IN
0
VOUT=1.8V
VIN=6.5V
-10
-20
IOUT = 150 mA
VINAC = 1 V p-p
C
IN=0 μF
-30
-40
-50
-60
-70
-80
IOUT = 10 mA
-90
-100
-110
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-24:
Power Supply Ripple
FIGURE 2-27:
Power Up Timing.
Rejection vs. Frequency.
0
-10
VOUT=5.0V
VIN=6.5V
VINAC = 1V p-p
-20
-30
-40
-50
-60
-70
-80
-90
-100
IOUT = 160 mA
C
IN=0 μF
IOUT = 40 mA
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-28:
Startup From Shutdown.
FIGURE 2-25:
Power Supply Ripple
Rejection vs. Frequency.
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
10.000
IOUT=50mA
VOUT=5.0V, VIN=6.0V
1.000
VIN = 3.6V
VOUT = 1.8V
VOUT=3.3V, VIN=4.3V
0.100
VOUT=1.8V, VIN=3.6V
Increasing Load
Decreasing Load
0.010
0.001
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Output Current (A)
0.01
0.1
1
10
100
1000
Frequency (KHz)
FIGURE 2-29:
Foldback.
Short Circuit Current
FIGURE 2-26:
(3 lines, VR = 1.2V, 3.3V, 5.0V).
Output Noise vs. Frequency
© 2011 Microchip Technology Inc.
DS22276A-page 13
MCP1754/MCP1754S
Note:
Unless otherwise indicated V = 3.3V, C
= 1 µF Ceramic (X7R), C = 1 µF Ceramic (X7R), I = 1 mA, T = +25 °C,
OUT IN L A
R
V
= V + 1V or V = 3.6V (whichever is greater), SHDN = V , package = SOT223.
R IN IN
IN
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VIN = 4.3V
OUT = 3.3V
V
Increasing Load
Decreasing Load
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Output Current (A)
FIGURE 2-30:
Short Circuit Current
FIGURE 2-32:
Dynamic Load Response.
Foldback.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VIN = 6V
V
OUT = 5V
Increasing Load
Decreasing Load
0.00 0.05 0.10 0.15 0.20 0.25 0.30
Output Current (A)
FIGURE 2-33:
Dynamic Load Response.
FIGURE 2-31:
Short Circuit Current
Foldback.
DS22276A-page 14
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1 and Table 3-2.
TABLE 3-1:
MCP1754 PIN FUNCTION TABLE
Pin No.
SOT223-5
Pin No.
SOT23-5
Pin No.
2X3 DFN
Name
Function
3
4
2
5
4
1
GND
VOUT
VIN
Ground Terminal
Regulated Voltage Output
Unregulated Supply Voltage
No Connection
2
1
8
—
5
—
4
3,6,7
2
NC
PWRGD
SHDN
GND
Open Drain Power Good Output
Shutdown Input
1
3
5
EP
—
EP
Exposed Pad, Connected to GND
TABLE 3-2:
MCP1754S PIN FUNCTION TABLE
Pin No.
SOT223-3
Pin No.
SOT23A
Pin No.
SOT89
Pin No.
2X3 DFN
Name
Function
Ground Terminal
2
3
1
2
2
3
4
GND
VOUT
VIN
1
8
Regulated Voltage Output
Unregulated Supply Voltage
No Connection
1
3
1
—
EP
—
—
—
EP
2,3,5,6,7
EP
NC
GND
Exposed Pad, Connected to GND
3.1
Ground Terminal (GND)
3.3
Unregulated Input Voltage (V )
IN
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current flows out of this pin; there is
no high current. The LDO output regulation is
referenced to this pin. Minimize voltage drops between
this pin and the negative side of the load.
Connect VIN to the input unregulated source voltage.
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. The input capacitor should
have a capacitance value equal to or larger than the
output capacitor for performance applications. The
input capacitor will supply the load current during
transients and improve performance. For applications
that have load currents below 10 mA, the input
capacitance requirement can be lowered. The type of
capacitor used may be ceramic, tantalum or aluminum
electrolytic. The low ESR characteristics of the ceramic
will yield better noise and PSRR performance at high-
frequency.
3.2
Regulated Output Voltage (V
)
OUT
Connect VOUT to the positive side of the load and the
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO VOUT pin as is practical.
The current flowing out of this pin is equal to the DC
load current.
© 2011 Microchip Technology Inc.
DS22276A-page 15
MCP1754/MCP1754S
3.4
Shutdown Input (SHDN)
3.6
Exposed Pad (EP)
The SHDN input is used to turn the LDO output voltage
on and off. When the SHDN input is at a logic-high
level, the LDO output voltage is enabled. When the
SHDN input is pulled to a logic-low level, the LDO
output voltage is disabled. When the SHDN input is
pulled low, the PWRGD output also goes low and the
LDO enters a low quiescent current shutdown state.
Some of the packages have an exposed metal pad on
the bottom of the package. The exposed metal pad
gives the device better thermal characteristics by
providing a good thermal path to either the PCB or heat
sink to remove heat from the device. The exposed pad
of the package is internally connected to GND.
3.5
Power Good Output (PWRGD)
For fixed applications, the PWRGD output is an open-
drain output used to indicate when the LDO output
voltage is within 92% (typically) of its nominal
regulation value. The PWRGD threshold has a typical
hysteresis value of 2%. The PWRGD output is delayed
by 100 µs (typical) from the time the LDO output is
within 92% + 2% (typical hysteresis) of the regulated
output value on power-up. This delay time is internally
fixed. The PWRGD pin may be pulled up to VIN or
VOUT. Pulling up to VOUT conserves power when the
device is in shutdown (/SHDN = 0V) mode.
DS22276A-page 16
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
MCP1754S will supply higher load currents of up to
typically 250 mA. This allows for device usage in
applications that have pulsed load currents having an
average output current value of 150 mA or less.
4.0
DEVICE OVERVIEW
The MCP1754/MCP1754S is a 150 mA output current,
Low Dropout (LDO) voltage regulator. The low dropout
voltage of 300 mV typical at 150 mA of current makes
it ideal for battery-powered applications. The input
voltage range is 3.6V to 16.0V. Unlike other high output
current LDOs, the MCP1754/MCP1754S typically
draws only 150 µA of quiescent current for a 150 mA
load. The MCP1754 adds a shutdown control input pin
and a power good output pin. The output voltage
options are fixed.
Output overload conditions may also result in an over-
temperature shutdown of the device. If the junction
temperature rises above 150°C (typical), the LDO will
shut
down
the
output.
See
Section 4.8
“Overtemperature Protection” for more information
on overtemperature shutdown.
4.3
Output Capacitor
4.1
LDO Output Voltage
The MCP1754/MCP1754S requires a minimum output
capacitance of 1 µF for output voltage stability. Ceramic
capacitors are recommended because of their size,
cost and environmentally robust qualities.
The MCP1754/MCP1754S LDO has a fixed output
voltage. The output voltage range is 1.8V to 5.5V.
Aluminum-electrolytic and tantalum capacitors can be
used on the LDO output as well. The Equivalent Series
Resistance (ESR) of the electrolytic output capacitor
should be no greater than 2.0 Ω. The output capacitor
should be located as close to the LDO output as is
practical. Ceramic materials X7R and X5R have low
temperature coefficients and are well within the
acceptable ESR range required. A typical 1 µF X7R
0805 capacitor has an ESR of 50 milliohms.
4.2
Output Current and Current
Limiting
The MCP1754/MCP1754S LDO is tested and ensured
to supply a minimum of 150 mA of output current. The
MCP1754/MCP1754S has no minimum output load, so
the output load current can go to 0 mA and the LDO will
continue to regulate the output voltage to within
tolerance.
Larger LDO output capacitors can be used with the
The MCP1754/MCP1754S also incorporates a true
output current foldback. If the output load presents an
excessive load due to a low impedance short circuit
condition, the output current and voltage will fold back
towards 30 mA and 0V respectively.
MCP1754/MCP1754S
performance and power supply ripple rejection
performance. maximum of 1000 µF is
to
improve
dynamic
A
recommended. Aluminum-electrolytic capacitors are
not recommended for low temperature applications of
< -25°C.
The output voltage and current will resume normal
levels when the excessive load is removed. If the
overload condition is a soft overload, the MCP1754/
Typical Current FoldBack - 5V Output
Increasing Load Decreasing Load
6
5
4
3
1
0
0.000
0.050
0.100
0.150
0.200
0.250
IOUT (A)
FIGURE 4-1:
Typical Current Foldback.
© 2011 Microchip Technology Inc.
DS22276A-page 17
MCP1754/MCP1754S
out of regulation. The timing diagram for the power
good output when using the shutdown input is shown in
Figure 4-3.
4.4
Input Capacitor
Low input source impedance is necessary for the LDO
output to operate properly. When operating from
batteries, or in applications with long lead length
(> 10 inches) between the input source and the LDO,
some input capacitance is recommended. A minimum
of 1.0 µF to 4.7 µF is recommended for most
applications.
The power good output is an open-drain output that can
be pulled up to any voltage that is equal to or less than
the LDO input voltage. This output is capable of sinking
1.2 mA minimum (VPWRGD < 0.4V maximum).
For applications that have output step load
requirements, the input capacitance of the LDO is very
important. The input capacitance provides the LDO
with a good local low-impedance source to pull the
transient currents from in order to respond quickly to
the output load step. For good step response
performance, the input capacitor should be of
equivalent or higher value than the output capacitor.
The capacitor should be placed as close to the input of
the LDO as is practical. Larger input capacitors will also
help reduce any high-frequency noise on the input and
output of the LDO and reduce the effects of any
inductance that exists between the input source
voltage and the input capacitance of the LDO.
VPWRGD_TH
VOUT
TPG
VOH
TVDET_PWRGD
PWRGD
VOL
FIGURE 4-2:
Power Good Timing.
4.5
Power Good Output (PWRGD)
The open drain PWRGD output is used to indicate
when the output voltage of the LDO is within 94%
V
IN
T
DELAY_SHDN
(typical
value,
see
Section 1.0
“Electrical
Characteristics” for minimum and maximum
specifications) of its nominal regulation value.
As the output voltage of the LDO rises, the open drain
PWRGD output will actively be held low until the output
voltage has exceeded the power good threshold plus
the hysteresis value. Once this threshold has been
exceeded, the power good time delay is started (shown
as TPG in the Electrical Characteristics table). The
power good time delay is fixed at 100 µs (typical). After
the time delay period, the PWRGD open drain output
becomes inactive and may be pulled high by an
external pullup resistor, indicating that the output
voltage is stable and within regulation limits. The power
good output is typically pulled up to VIN or VOUT. Pulling
the signal up to VOUT conserves power during
shutdown mode.
T
PG
SHDN
V
OUT
PWRGD
FIGURE 4-3:
Shutdown.
Power Good Timing from
If the output voltage of the LDO falls below the power
good threshold, the power good output will transition
low. The power good circuitry has a 200 µs delay when
detecting a falling output voltage, which helps to
increase noise immunity of the power good output and
avoid false triggering of the power good output during
fast output transients. See Figure 4-2 for power good
timing characteristics.
4.6
Shutdown Input (SHDN)
The SHDN input is an active-low input signal that turns
the LDO on and off. The SHDN threshold is a fixed
voltage level. The minimum value of this shutdown
threshold required to turn the output ON is 2.4V. The
maximum value required to turn the output OFF is 0.8V.
When the LDO is put into Shutdown mode using the
SHDN input, the power good output is pulled low
immediately, indicating that the output voltage will be
DS22276A-page 18
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
The SHDN input will ignore low-going pulses (pulses
meant to shut down the LDO) that are up to 400 ns in
pulse width. If the shutdown input is pulled low for more
than 400 ns, the LDO will enter Shutdown mode. This
small bit of filtering helps to reject any system noise
spikes on the shutdown input signal.
For high-current applications, voltage drops across the
PCB traces must be taken into account. The trace
resistances can cause significant voltage drops
between the input voltage source and the LDO. For
applications with input voltages near 3.0V, these PCB
trace voltage drops can sometimes lower the input
voltage enough to trigger
undervoltage lockout.
a shutdown due to
On the rising edge of the SHDN input, the shutdown
circuitry has a 30 µs delay before allowing the LDO
output to turn on. This delay helps to reject any false
turn-on signals or noise on the SHDN input signal. After
the 30 µs delay, the LDO output enters its soft-start
period as it rises from 0V to its final regulation value. If
the SHDN input signal is pulled low during the 30 µs
delay period, the timer will be reset and the delay time
will start over again on the next rising edge of the
SHDN input. The total time from the SHDN input going
high (turn-on) to the LDO output being in regulation is
typically 100 µs. See Figure 4-4 for a timing diagram of
the SHDN input.
4.8
Overtemperature Protection
The MCP1754/MCP1754S LDO has temperature-
sensing circuitry to prevent the junction temperature
from exceeding approximately 150°C. If the LDO
junction temperature does reach 150°C, the LDO
output will be turned off until the junction temperature
cools to approximately 137°C, at which point the LDO
output will automatically resume normal operation. If
the internal power dissipation continues to be
excessive, the device will again shut off. The junction
temperature of the die is a function of power
dissipation, ambient temperature and package thermal
resistance. See Section 5.0 “Application Circuits &
Issues” for more information on LDO power
dissipation and junction temperature.
TDELAY_SHDN
400 ns (typ)
70 µs
30 µs
SHDN
VOUT
FIGURE 4-4:
Shutdown Input Timing
Diagram.
4.7
Dropout Voltage and Undervoltage
Lockout
Dropout voltage is defined as the input-to-output
voltage differential at which the output voltage drops
2% below the nominal value that was measured with a
VR
+ 1.0V differential applied. The MCP1754/
MCP1754S LDO has a very low dropout voltage
specification of 300 mV (typical) at 150 mA of output
current. See Section 1.0 “Electrical Characteristics”
for maximum dropout voltage specifications.
The MCP1754/MCP1754S LDO operates across an
input voltage range of 3.6V to 16.0V and incorporates
input Undervoltage Lockout (UVLO) circuitry that keeps
the LDO output voltage off until the input voltage
reaches a minimum of 2.95V (typical) on the rising
edge of the input voltage. As the input voltage falls, the
LDO output will remain on until the input voltage level
reaches 2.70V (typical).
© 2011 Microchip Technology Inc.
DS22276A-page 19
MCP1754/MCP1754S
NOTES:
DS22276A-page 20
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
EQUATION
5.0
5.1
APPLICATION CIRCUITS &
ISSUES
TJ(MAX) = PTOTAL × RθJA + TAMAX
TJ(MAX) = Maximum continuous junction
Typical Application
temperature
The MCP1754/MCP1754S is most commonly used as
a voltage regulator. It’s low quiescent current and low
dropout voltage make it ideal for many battery-powered
applications.
PTOTAL = Total device power dissipation
RθJA = Thermal resistance from junction to ambient
TAMAX = Maximum ambient temperature
MCP1754S
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
VIN
3.6V to 4.8V
GND
VOUT
1.8V
V
IN
CIN
V
OUT
1 µF Ceramic
IOUT
50 mA
COUT
1 µF Ceramic
EQUATION
FIGURE 5-1: Typical Application Circuit.
(TJ(MAX) – TA(MAX)
)
PD(MAX) = ---------------------------------------------------
RθJA
5.1.1
APPLICATION INPUT CONDITIONS
PD(MAX) = Maximum device power dissipation
Package Type = SOT23
Input Voltage Range = 3.6V to 4.8V
VIN maximum = 4.8V
TJ(MAX) = Maximum continuous junction
temperature
TA(MAX) = Maximum ambient temperature
VOUT typical = 1.8V
RθJA = Thermal resistance from junction to ambient
IOUT = 50 mA maximum
5.2
Power Calculations
EQUATION
5.2.1
POWER DISSIPATION
TJ(RISE) = PD(MAX) × RθJA
The internal power dissipation of the MCP1754/
MCP1754S is a function of input voltage, output
voltage and output current. The power dissipation, as
a result of the quiescent current draw, is so low, it is
insignificant (56.0 µA x VIN). The following equation
can be used to calculate the internal power dissipation
of the LDO.
TJ(RISE) = Rise in device junction temperature over
the ambient temperature
PD(MAX) = Maximum device power dissipation
RθJA = Thermal resistance from junction to ambient
EQUATION
EQUATION
TJ = TJ(RISE) + TA
TJ = Junction Temperature
PLDO = (VIN(MAX)) – VOUT(MIN)) × IOUT(MAX ))
TJ(RISE) = Rise in device junction temperature over
the ambient temperature
PLDO = LDO Pass device internal power dissipation
VIN(MAX) = Maximum input voltage
TA = Ambient temperature
VOUT(MIN) = LDO minimum output voltage
The maximum continuous operating junction
temperature specified for the MCP1754/MCP1754S is
+150°C. To estimate the internal junction temperature
of the MCP1754/MCP1754S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (RθJA). The thermal resistance from
junction to ambient for the SOT23A pin package is
estimated at 336 °C/W.
© 2011 Microchip Technology Inc.
DS22276A-page 21
MCP1754/MCP1754S
5.3
Voltage Regulator
TJ = TJRISE + TA(MAX)
TJ = 91.3°C
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
Maximum Package Power Dissipation Examples at
+40°C Ambient Temperature
SOT23 (336.0°C/Watt = RθJA
)
P
D(MAX) = (125°C - 40°C) / 336°C/W
5.3.1
POWER DISSIPATION EXAMPLE
PD(MAX) = 253 milliwatts
Package
SOT89 (153.3°C/Watt = RθJA
)
Package Type = SOT23
Input Voltage
P
D(MAX) = (125°C - 40°C) / 153.3°C/W
PD(MAX) = 554 milliwatts
VIN = 3.6V to 4.8V
LDO Output Voltages and Currents
5.4
Voltage Reference
VOUT = 1.8V
The MCP1754/MCP1754S can be used not only as a
regulator, but also as a low quiescent current voltage
reference. In many microcontroller applications, the
initial accuracy of the reference can be calibrated using
I
OUT = 50 mA
Maximum Ambient Temperature
TA(MAX) = +40°C
production test equipment or by using
a ratio
Internal Power Dissipation
measurement. When the initial accuracy is calibrated,
the thermal stability and line regulation tolerance are
the only errors introduced by the MCP1754/
MCP1754S LDO. The low cost, low quiescent current
and small ceramic output capacitor are all advantages
when using the MCP1754/MCP1754S as a voltage
reference.
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX)
PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA
PLDO = 152.7 milli-Watts
Ratio Metric Reference
Device Junction Temperature Rise
®
MCP1754S
PICmicro
microcontroller
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
resistance from junction to ambient (RθJA) is derived
from an EIA/JEDEC standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application”, (DS00792), for more information regarding
this subject.
56 µA Bias
V
IN
V
C
V
IN
REF
OUT
C
1 µF
OUT
GND
1 µF
ADO
AD1
Bridge Sensor
FIGURE 5-2: Using the MCP1754/MCP1754S
as a Voltage Reference.
5.5
Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 150 mA
maximum specification of the MCP1754/MCP1754S.
The internal current limit of the MCP1754/MCP1754S
will prevent high peak load demands from causing non-
recoverable damage. The 150 mA rating is a maximum
average continuous rating. As long as the average
current does not exceed 150 mA, pulsed higher load
currents can be applied to the MCP1754/MCP1754S.
The typical current limit for the MCP1754/MCP1754S is
250 mA (TA +25°C).
TJ(RISE) = PTOTAL x RqJA
TJRISE = 152.7 milliwatts x 336.0°C/Watt
TJRISE = 51.3°C
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
DS22276A-page 22
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
Example:
3-Lead SOT-223 (MCP1754S)
Part Number
Code
1754S18
XXXXXXX
MCP1754ST-3302E/DB
MCP1754ST-5002E/DB
1754S33
1754S50
XXXYYWW
NNN
EDB1130
256
3-Lead SOT-23A (MCP1754S)
Example:
Part Number
Code
JC25
MCP1754ST-1802E/CB JCNN
MCP1754ST-3302E/CB JDNN
MCP1754ST-5002E/CB JENN
XXNN
3-Lead SOT-89 (MCP1754S)
Example:
Part Number
Code
MT1130
256
MCP1754ST-1802E/MB MTYYWW
MCP1754ST-3302E/MB MUYYWW
MCP1754ST-5002E/MB MVYYWW
NNN
Legend: XX...X Customer-specific information
Y
YY
WW
NNN
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available characters
for customer-specific information.
© 2011 Microchip Technology Inc.
DS22276A-page 23
MCP1754/MCP1754S
Package Marking Information (Continued)
Example:
YQ25
5-Lead SOT-23 (2x3) (MCP1754)
Part Number
Code
MCP1754T-1802E/OT
MCP1754T-3302E/OT
MCP1754T-5002E/OT
YQNN
YRNN
YSNN
XXNN
5-Lead SOT-223 (MCP1754)
Example:
Part Number
Code
175418
XXXXXXX
XXXYYWW
MCP1754T-1802E/DC
MCP1754T-3302E/DC
MCP1754T-5002E/DC
175418
175433
175450
EDC1130
256
NNN
Example:
8-Lead DFN (2x3) (MCP1754)
Part Number
Code
Part Number
Code
MCP1754-1802E/MC AKG MCP1754S-1802E/MC ALN
MCP1754-3302E/MC AKH MCP1754S-3302E/MC ALM
MCP1754-5002E/MC AKJ MCP1754S-5002E/MC ALL
MCP1754T-1802E/MC AKG MCP1754ST-1802E/MC ALN
MCP1754T-3302E/MC AKH MCP1754ST-3302E/MC ALM
MCP1754T-5002E/MC AKJ MCP1754ST-5002E/MC ALL
AKJ
130
25
Legend: XX...X Customer-specific information
Y
YY
WW
NNN
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
*
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e3
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available characters
for customer-specific information.
DS22276A-page 24
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
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© 2011 Microchip Technology Inc.
DS22276A-page 25
MCP1754/MCP1754S
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DS22276A-page 26
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
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© 2011 Microchip Technology Inc.
DS22276A-page 27
MCP1754/MCP1754S
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22276A-page 28
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
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ꢑꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆꢃꢆꢓꢈꢉꢆ!ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢃꢆꢓꢈꢎꢅꢍꢈꢔꢕꢏ"ꢈ'ꢀꢖꢁ(ꢏꢁ
)ꢕ*+ )ꢉ ꢃꢊꢈꢂꢃꢄꢅꢆ ꢃꢇꢆꢁꢈꢗꢌꢅꢇꢍꢅ#ꢃꢊꢉꢋꢋꢘꢈꢅ&ꢉꢊ#ꢈ,ꢉꢋ$ꢅꢈ ꢌꢇ-ꢆꢈ-ꢃ#ꢌꢇ$#ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢅ ꢁ
ꢏꢃꢊꢍꢇꢊꢌꢃꢎ ꢗꢅꢊꢌꢆꢇꢋꢇꢓꢘ ꢂꢍꢉ-ꢃꢆꢓ *ꢐꢖꢞꢐꢑꢜ)
© 2011 Microchip Technology Inc.
DS22276A-page 29
MCP1754/MCP1754S
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22276A-page 30
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
+ꢂꢃꢄꢅꢆꢇꢈꢉꢅꢊꢋꢌꢍꢇꢎꢏꢅꢉꢉꢇꢐꢑꢋꢉꢌꢒꢄꢇꢓꢔꢅꢒꢊꢌꢊꢋꢕꢔꢇꢖꢐꢓꢙꢇꢚꢎꢐꢓꢂꢛꢁꢜ
!ꢕꢋꢄ" .ꢇꢍꢈ#ꢌꢅꢈꢄꢇ #ꢈꢊ$ꢍꢍꢅꢆ#ꢈꢎꢉꢊ/ꢉꢓꢅꢈ!ꢍꢉ-ꢃꢆꢓ 0ꢈꢎꢋꢅꢉ ꢅꢈ ꢅꢅꢈ#ꢌꢅꢈꢏꢃꢊꢍꢇꢊꢌꢃꢎꢈ1ꢉꢊ/ꢉꢓꢃꢆꢓꢈꢕꢎꢅꢊꢃ%ꢃꢊꢉ#ꢃꢇꢆꢈꢋꢇꢊꢉ#ꢅ!ꢈꢉ#ꢈ
ꢌ##ꢎ+22---ꢁꢄꢃꢊꢍꢇꢊꢌꢃꢎꢁꢊꢇꢄ2ꢎꢉꢊ/ꢉꢓꢃꢆꢓ
b
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ꢑꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆꢃꢆꢓꢈꢉꢆ!ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢃꢆꢓꢈꢎꢅꢍꢈꢔꢕꢏ"ꢈ'ꢀꢖꢁ(ꢏꢁ
)ꢕ*+ )ꢉ ꢃꢊꢈꢂꢃꢄꢅꢆ ꢃꢇꢆꢁꢈꢗꢌꢅꢇꢍꢅ#ꢃꢊꢉꢋꢋꢘꢈꢅ&ꢉꢊ#ꢈ,ꢉꢋ$ꢅꢈ ꢌꢇ-ꢆꢈ-ꢃ#ꢌꢇ$#ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢅ ꢁ
ꢏꢃꢊꢍꢇꢊꢌꢃꢎ ꢗꢅꢊꢌꢆꢇꢋꢇꢓꢘ ꢂꢍꢉ-ꢃꢆꢓ *ꢐꢖꢞꢐꢜꢀ)
© 2011 Microchip Technology Inc.
DS22276A-page 31
MCP1754/MCP1754S
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22276A-page 32
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
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!ꢕꢋꢄ" .ꢇꢍꢈ#ꢌꢅꢈꢄꢇ #ꢈꢊ$ꢍꢍꢅꢆ#ꢈꢎꢉꢊ/ꢉꢓꢅꢈ!ꢍꢉ-ꢃꢆꢓ 0ꢈꢎꢋꢅꢉ ꢅꢈ ꢅꢅꢈ#ꢌꢅꢈꢏꢃꢊꢍꢇꢊꢌꢃꢎꢈ1ꢉꢊ/ꢉꢓꢃꢆꢓꢈꢕꢎꢅꢊꢃ%ꢃꢊꢉ#ꢃꢇꢆꢈꢋꢇꢊꢉ#ꢅ!ꢈꢉ#ꢈ
ꢌ##ꢎ+22---ꢁꢄꢃꢊꢍꢇꢊꢌꢃꢎꢁꢊꢇꢄ2ꢎꢉꢊ/ꢉꢓꢃꢆꢓ
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ꢑꢁ ꢂꢃꢄꢅꢆ ꢃꢇꢆꢃꢆꢓꢈꢉꢆ!ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢃꢆꢓꢈꢎꢅꢍꢈꢔꢕꢏ"ꢈ'ꢀꢖꢁ(ꢏꢁ
)ꢕ*+ )ꢉ ꢃꢊꢈꢂꢃꢄꢅꢆ ꢃꢇꢆꢁꢈꢗꢌꢅꢇꢍꢅ#ꢃꢊꢉꢋꢋꢘꢈꢅ&ꢉꢊ#ꢈ,ꢉꢋ$ꢅꢈ ꢌꢇ-ꢆꢈ-ꢃ#ꢌꢇ$#ꢈ#ꢇꢋꢅꢍꢉꢆꢊꢅ ꢁ
ꢏꢃꢊꢍꢇꢊꢌꢃꢎ ꢗꢅꢊꢌꢆꢇꢋꢇꢓꢘ ꢂꢍꢉ-ꢃꢆꢓ *ꢐꢖꢞꢀꢛꢒ)
© 2011 Microchip Technology Inc.
DS22276A-page 33
MCP1754/MCP1754S
+ꢂꢃꢄꢅꢆꢇꢈꢉꢅꢊꢋꢌꢍꢇꢎꢏꢅꢉꢉꢇꢐꢑꢋꢉꢌꢒꢄꢇꢓꢔꢅꢒꢊꢌꢊꢋꢕꢔꢇꢖꢗ#ꢙꢇꢚꢎꢐꢓꢂꢛꢛꢁꢜ
!ꢕꢋꢄ" .ꢇꢍꢈ#ꢌꢅꢈꢄꢇ #ꢈꢊ$ꢍꢍꢅꢆ#ꢈꢎꢉꢊ/ꢉꢓꢅꢈ!ꢍꢉ-ꢃꢆꢓ 0ꢈꢎꢋꢅꢉ ꢅꢈ ꢅꢅꢈ#ꢌꢅꢈꢏꢃꢊꢍꢇꢊꢌꢃꢎꢈ1ꢉꢊ/ꢉꢓꢃꢆꢓꢈꢕꢎꢅꢊꢃ%ꢃꢊꢉ#ꢃꢇꢆꢈꢋꢇꢊꢉ#ꢅ!ꢈꢉ#ꢈ
ꢌ##ꢎ+22---ꢁꢄꢃꢊꢍꢇꢊꢌꢃꢎꢁꢊꢇꢄ2ꢎꢉꢊ/ꢉꢓꢃꢆꢓ
DS22276A-page 34
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
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© 2011 Microchip Technology Inc.
DS22276A-page 35
MCP1754/MCP1754S
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS22276A-page 36
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
APPENDIX A: REVISION HISTORY
Revision A (August 2011)
• Original data sheet for the MCP1754/MCP1754S
family of devices.
© 2011 Microchip Technology Inc.
DS22276A-page 37
MCP1754/MCP1754S
NOTES:
DS22276A-page 38
© 2011 Microchip Technology Inc.
MCP1754/MCP1754S
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
X-
XX
X
X
X/
XX
a) MCP1754T-1802E/DC: 1.8V, 5LD SOT-223,
Tape and Reel
Device
Tape
Output Feature Tolerance Temp. Package
Code
b) MCP1754T-3302E/DC: 3.3V, 5LD SOT-223,
Tape and Reel
and Reel Voltage
c) MCP1754T-5002E/DC: 5.0V, 5LD SOT-223,
Tape and Reel
MCP1754:
150 mA, 16V High Performance LDO
MCP1754T:
150 mA, 16V High Performance LDO
(Tape and Reel) (SOT)
150 mA, 16V High Performance LDO
150 mA, 16V High Performance LDO
(Tape and Reel) (SOT)
a) MCP1754T-1802E/CB: 1.8V, 3LD SOT-23A,
Tape and Reel
b) MCP1754T-3302E/CB: 3.3V, 3LD SOT-23A,
Tape and Reel
c) MCP1754T-5002E/CB: 5.0V, 3LD SOT-23A,
Tape and Reel
MCP1754S:
MCP1754ST:
Tape and Reel:
Output Voltage*:
T
=
Tape and Reel
a) MCP1754T-1802E/MB: 1.8V, 3LD SOT-89,
Tape and Reel
b) MCP1754T-3302E/MB: 3.3V, 3LD SOT-89,
Tape and Reel
c) MCP1754T-5002E/MB: 5.0V, 3LD SOT-89,
Tape and Reel
18
33
50
=
=
=
1.8V “Standard”
3.3V “Standard”
5.0V “Standard”
a) MCP1754T-1802E/OT: 1.8V, 5LD SOT-23,
Tape and Reel
*Contact factory for other voltage options
b) MCP1754T-3302E/OT: 3.3V, 5LD SOT-23,
Tape and Reel
c) MCP1754T-5002E/OT: 5.0V, 5LD SOT-23,
Tape and Reel
Extra Feature Code:
Tolerance:
0
2
E
=
=
=
Fixed
2% (Standard)
-40°C to +125°C
a) MCP1754T-1802E/MC: 1.8V, 8LD DFN,
Tape and Reel
b) MCP1754T-3302E/MC: 3.3V, 8LD DFN,
Tape and Reel
c) MCP1754T-5002E/MC: 5.0V, 8LD DFN,
Tape and Reel
Temperature Range:
Package:
*DB = Plastic Small Outline, (SOT-223), 3-lead
CB = Plastic Small Outline, (SOT-23A), 3-lead
MB = Plastic Small Outline, (SOT-89), 3-lead
DC = Plastic Small Outline, (SOT223), 5-lead
OT = Plastic Small Outline, (SOT-23), 5-lead
MC = Plastic Dual Flat, No Lead, (2x3 DFN), 8-lead
a) MCP1754ST-1802E/MC: 1.8V, 8LD DFN,
Tape and Reel
b) MCP1754ST-3302E/MC: 3.3V, 8LD DFN,
Tape and Reel
c) MCP1754ST-5002E/MC: 5.0V, 8LD DFN,
Tape and Reel
*Note: The3-lead SOT-223(DB) isnot astandard package
for output voltages below 3.0V
a) MCP1754ST-3302E/DB: 3.3V, 3LD SOT-223,
Tape and Reel
b) MCP1754ST-5002E/DB: 5.0V, 3LD SOT-223,
Tape and Reel
© 2011 Microchip Technology Inc.
DS22276A-page 39
MCP1754/MCP1754S
NOTES:
DS22276A-page 40
© 2011 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
32
PIC logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, chipKIT,
chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net,
dsPICworks, dsSPEAK, ECAN, ECONOMONITOR,
FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP,
Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB,
MPLINK, mTouch, Omniscient Code Generation, PICC,
PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE,
rfLAB, Select Mode, Total Endurance, TSHARC,
UniWinDriver, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2011, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-61341-570-2
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2011 Microchip Technology Inc.
DS22276A-page 41
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Web Address:
www.microchip.com
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-330-9305
Los Angeles
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Toronto
Mississauga, Ontario,
Canada
China - Xiamen
Tel: 905-673-0699
Fax: 905-673-6509
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
08/02/11
DS22276A-page 42
© 2011 Microchip Technology Inc.
MCP1754-3302E-CB 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
MCP1754-3302E-DB | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-3302E-DC | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-3302E-MB | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-3302E-MC | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-3302E-OR | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-5002E-CB | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-5002E-DB | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-5002E-DC | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-5002E-MB | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 | |
MCP1754-5002E-MC | MICROCHIP | 150 mA, 16V, High Performance LDO | 获取价格 |
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