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MCP6471T-E/LTY [MICROCHIP]

OP-AMP;
MCP6471T-E/LTY
型号： MCP6471T-E/LTY
厂家： MICROCHIP    MICROCHIP
描述：

OP-AMP

放大器 光电二极管
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MCP6471/2/4  
2 MHz, Low-Input Bias Current Op Amps  
Features  
Description  
• Low-Input Bias Current  
- 150 pA (typical, TA = +125°C)  
• Low Quiescent Current  
- 100 µA/amplifier (typical)  
• Low-Input Offset Voltage  
- ±1.5 mV (maximum)  
The Microchip MCP6471/2/4 family of operational  
amplifiers (op amps) has low-input bias current  
(150 pA, typical at 125°C) and rail-to-rail input and  
output operation. This family is unity gain stable and  
has a gain bandwidth product of 2 MHz (typical). These  
devices operate with a single-supply voltage as low as  
2.0V, while only drawing 100 µA/amplifier (typical) of  
quiescent current. These features make the family of  
op amps well suited for photodiode amplifier, pH  
electrode amplifier, low leakage amplifier, and battery-  
powered signal conditioning applications, etc.  
• Supply Voltage Range: 2.0V to 5.5V  
• Rail-to-Rail Input/Output  
• Gain Bandwidth Product: 2 MHz (typical)  
• Slew Rate: 1.1 V/µs (typical)  
• Unity Gain Stable  
The MCP6471/2/4 family is offered in single  
(MCP6471), dual (MCP6472), quad (MCP6474)  
packages. All devices are designed using an advanced  
CMOS process and fully specified in extended  
temperature range from -40°C to +125°C.  
• No Phase Reversal  
• Small Packages  
- Singles in SC70-5, SOT-23-5  
• Extended Temperature Range  
- -40°C to +125°C  
Related Parts  
• MCP6481/2/4: 4 MHz, Low-Input Bias Current Op  
Amps  
Applications  
• MCP6491/2/4: 7.5 MHz, Low-Input Bias Current  
Op Amps  
• Photodiode Amplifier  
• pH Electrode Amplifier  
• Low Leakage Amplifier  
• Piezoelectric Transducer Amplifier  
• Active Analog Filter  
• Battery-Powered Signal Conditioning  
Design Aids  
• SPICE Macro Models  
• FilterLab® Software  
• MAPS (Microchip Advanced Part Selector)  
• Analog Demonstration and Evaluation Boards  
• Application Notes  
Package Types  
MCP6474  
MCP6472  
MCP6472  
MCP6471  
SOIC, MSOP  
SOIC, TSSOP  
SC70, SOT-23  
2x3 TDFN*  
VOUT  
VSS  
1
2
3
5
VDD  
VOUTA  
1
8
VOUTA  
VOUTA  
VINA  
1
2
8 VDD  
VDD  
14 VOUTD  
1
2
3
4
5
V
13  
–
VOUTB  
VINA  
–
+
–
7
IND  
2
7 VOUTB  
VINA  
VINA  
VSS  
–
EP  
9
4 V  
–
VIN+  
IN  
6
VINA  
12 VIND  
11 VSS  
+
VINB  
–
VINA+ 3  
VSS  
3
4
6
5
VINB  
–
+
+
4
5 VINB  
+
VDD  
VINB  
VINB  
+
10 VINC  
+
9
8
VINC  
VOUTC  
–
V
–
6
7
INB  
VOUTB  
* Includes Exposed Thermal Pad (EP); see Table 3-1.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 1  
 
MCP6471/2/4  
Typical Application  
C2  
R2  
VOUT  
ID1  
VDD  
–
D1  
Light  
MCP647X  
+
Photodiode Amplifier  
DS20002324C-page 2  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
1.0  
1.1  
ELECTRICAL CHARACTERISTICS  
Absolute Maximum Ratings †  
V
– V ................................................................................................................................... ......................................................6.5V  
SS  
DD  
Current at Input Pins......................................................................................................................................................................±2 mA  
Analog Inputs (V +, V -) (Note 1) .................................................................................................................V – 1.0V to V + 1.0V  
IN  
IN  
SS  
DD  
All Other Inputs and Outputs ...........................................................................................................................V – 0.3V to V + 0.3V  
SS  
DD  
Difference Input Voltage...........................................................................................................................................................V – V  
DD  
SS  
Output Short-Circuit Current ................................................................................................................ ...................................continuous  
Current at Output and Supply Pins .............................................................................................................................................±50 mA  
Storage Temperature ................................................................................................................ .....................................-65°C to +150°C  
Maximum Junction Temperature (T )................................................................................................................ ...........................+150°C  
J
ESD protection on all pins (HBM)  4 kV  
Note 1: See Section 4.1.2, Input Voltage Limits.  
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.  
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated  
in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended  
periods may affect device reliability.  
1.2  
Specifications  
DC ELECTRICAL SPECIFICATIONS  
TABLE 1-1:  
Electrical Characteristics: Unless otherwise indicated, VDD = +2.0V to +5.5V, VSS = GND, TA = +25°C,  
CM = VDD/2, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).  
V
Parameters  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
Input Offset  
Input Offset Voltage  
VOS  
-1.5  
—
—
±2.5  
91  
+1.5  
—
mV VDD = 3.0V, VCM = VDD/4  
µV/°C TA = -40°C to +125°C  
Input Offset Drift with Temperature VOS/TA  
Power Supply Rejection Ratio  
Input Bias Current and Impedance  
Input Bias Current  
PSRR  
IB  
75  
—
dB  
VCM = VDD/4  
—
—
—
—
—
—
±1  
8
—
—
pA  
pA  
TA = +85°C  
150  
350  
—
pA  
TA = +125°C  
Input Offset Current  
IOS  
ZCM  
±0.1  
1013||6  
1013||6  
pA  
Common Mode Input Impedance  
Differential Input Impedance  
Common Mode  
—
||pF  
||pF  
ZDIFF  
—
Common Mode Input Voltage  
Range  
VCMR  
VSS - 0.3  
—
83  
88  
VDD + 0.3  
V
Common Mode Rejection Ratio  
CMRR  
65  
70  
—
—
dB  
dB  
VCM = -0.3V to 2.3V,  
VDD = 2.0V  
V
V
CM = -0.3V to 5.8V,  
DD = 5.5V  
Open-Loop Gain  
DC Open-Loop Gain (Large Signal)  
AOL  
95  
115  
—
dB  
0.2V < VOUT < (VDD – 0.2V)  
DD = 5.5V, VCM = VSS  
V
2012-2013 Microchip Technology Inc.  
DS20002324C-page 3  
 
 
 
MCP6471/2/4  
TABLE 1-1:  
DC ELECTRICAL SPECIFICATIONS (CONTINUED)  
Electrical Characteristics: Unless otherwise indicated, VDD = +2.0V to +5.5V, VSS = GND, TA = +25°C,  
VCM = VDD/2, VOUT VDD/2, VL = VDD/2 and RL = 10 kto VL. (Refer to Figure 1-1).  
Parameters  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
Output  
High-Level Output Voltage  
Low-Level Output Voltage  
Output Short-Circuit Current  
VOH  
1.980  
5.480  
—
1.996  
5.493  
0.004  
0.007  
—
V
V
V
V
VDD = 2.0V  
0.5V input overdrive  
VDD = 5.5V  
—
0.5V input overdrive  
VOL  
0.020  
0.020  
VDD = 2.0V  
0.5 V input overdrive  
—
VDD = 5.5V  
0.5 V input overdrive  
ISC  
—
—
±10  
±32  
—
—
mA VDD = 2.0V  
mA  
VDD = 5.5V  
Power Supply  
Supply Voltage  
VDD  
IQ  
2.0  
50  
—
5.5  
V
Quiescent Current per Amplifier  
100  
200  
µA  
IO = 0, VCM = VDD/4  
TABLE 1-2:  
AC ELECTRICAL SPECIFICATIONS  
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND,  
VCM = VDD/2, VOUT VDD/2, VL = VDD/2, RL = 10 kto VL and CL = 20 pF. (Refer to Figure 1-1).  
Parameters  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
AC Response  
Gain Bandwidth Product  
Phase Margin  
GBWP  
PM  
—
—
—
2
—
—
—
MHz  
°
65  
1.1  
G = +1V/V  
Slew Rate  
SR  
V/µs  
Noise  
Input Noise Voltage  
Input Noise Voltage Density  
Eni  
eni  
—
—
—
—
7
—
—
—
—
µVp-p f = 0.1 Hz to 10 Hz  
nV/Hz f = 1 kHz  
27  
23  
0.6  
nV/Hz f = 10 kHz  
fA/Hz f = 1 kHz  
Input Noise Current Density  
ini  
TABLE 1-3:  
TEMPERATURE SPECIFICATIONS  
Electrical Characteristics: Unless otherwise indicated, VDD = +2.0V to +5.5V and VSS = GND.  
Parameters  
Temperature Ranges  
Sym.  
Min.  
Typ.  
Max.  
Units  
Conditions  
Operating Temperature Range  
Storage Temperature Range  
TA  
TA  
-40  
-65  
—
—
+125  
+150  
°C  
°C  
Note 1  
Thermal Package Resistances  
Thermal Resistance, 5L-SC-70  
Thermal Resistance, 5L-SOT-23  
Thermal Resistance, 8L-2x3 TDFN  
Thermal Resistance, 8L-MSOP  
Thermal Resistance, 8L-SOIC  
Thermal Resistance, 14L-SOIC  
Thermal Resistance, 14L-TSSOP  
JA  
JA  
JA  
JA  
JA  
JA  
JA  
—
—
—
—
—
—
—
331  
220.7  
52.5  
211  
—
—
—
—
—
—
—
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
149.5  
95.3  
100  
Note 1: The internal junction temperature (TJ) must not exceed the absolute maximum specification of +150°C.  
DS20002324C-page 4  
2012-2013 Microchip Technology Inc.  
 
 
MCP6471/2/4  
1.3  
Test Circuits  
CF  
6.8 pF  
The circuit used for most DC and AC tests is shown in  
Figure 1-1. This circuit can independently set VCM and  
VOUT (refer to Equation 1-1). Note that VCM is not the  
circuit’s common mode voltage ((VP + VM)/2), and that  
VOST includes VOS plus the effects (on the input offset  
RG  
100 k  
RF  
100 k  
VDD/2  
VP  
error, VOST) of temperature, CMRR, PSRR and AOL  
.
VDD  
VIN+  
EQUATION 1-1:  
CB1  
100 nF  
CB2  
1 µF  
GDM = RF RG  
MCP647X  
VCM = VP + VDD 22  
VOST = VIN+ – VIN–  
VIN–  
VOUT = VDD 2+ VP – VM+ VOST 1 + GDM  
VOUT  
VM  
RL  
CL  
Where:  
RF  
RG  
10 k  
20 pF  
100 k  
100 k  
GDM = Differential Mode Gain  
(V/V)  
VCM = Op Amp’s Common Mode  
(V)  
CF  
6.8 pF  
Input Voltage  
VL  
VOST = Op Amp’s Total Input Offset  
(mV)  
Voltage  
FIGURE 1-1:  
AC and DC Test Circuit for  
Most Specifications.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 5  
 
 
MCP6471/2/4  
NOTES:  
DS20002324C-page 6  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
2.0  
TYPICAL PERFORMANCE CURVES  
Note:  
The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein  
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,  
VL = VDD/2, RL = 10 kto VL and CL = 20 pF.  
21%  
18%  
15%  
12%  
9%  
1000  
800  
600  
400  
200  
270 Samples  
DD = 3.0V  
VCM = VDD/4  
V
0
-200  
-400  
-600  
-800  
-1000  
6%  
+125°C  
+85°C  
+25°C  
-40°C  
VDD = 5.5V  
Representative Part  
3%  
0%  
Common Mode Input Voltage (V)  
Input Offset Voltage (µV)  
FIGURE 2-1:  
Input Offset Voltage.  
FIGURE 2-4:  
Input Offset Voltage vs.  
Common Mode Input Voltage.  
18%  
1000  
800  
600  
400  
200  
0
270 Samples  
15%  
12%  
9%  
VDD = 3.0V  
VCM = VDD/4  
Representative Part  
TA = -40°C to +125°C  
VDD = 5.5V  
-200  
VDD = 2.0V  
-400  
6%  
-600  
-800  
3%  
-1000  
0%  
Output Voltage (V)  
Input Offset Voltage Drift (µV/°C)  
FIGURE 2-2:  
Input Offset Voltage Drift.  
FIGURE 2-5:  
Input Offset Voltage vs.  
Output Voltage.  
1000  
800  
600  
400  
200  
1000  
800  
600  
400  
200  
0
0
-200  
-400  
-600  
-800  
-1000  
-200  
-400  
-600  
-800  
-1000  
+125°C  
+85°C  
+25°C  
-40°C  
+125°C  
+85°C  
+25°C  
VDD = 2.0V  
Representative Part  
Representative Part  
-40°C  
Power Supply Voltage (V)  
Common Mode Input Voltage (V)  
FIGURE 2-3:  
Common Mode Input Voltage.  
Input Offset Voltage vs.  
FIGURE 2-6:  
Power Supply Voltage.  
Input Offset Voltage vs.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 7  
 
 
 
MCP6471/2/4  
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,  
VL = VDD/2, RL = 10 kto VL and CL = 20 pF.  
105  
100  
95  
1,000  
100  
10  
PSRR  
90  
85  
80  
CMRR @ VDD = 5.5V  
@ VDD = 2.0V  
75  
70  
65  
-50  
-25  
0
25  
50  
75  
100 125  
0.1  
1
10 100  
1k  
10k 100k 1M  
16  
Frequency (Hz)  
Temperature (°C)  
FIGURE 2-7:  
Input Noise Voltage Density  
FIGURE 2-10:  
CMRR, PSRR vs. Ambient  
vs. Frequency.  
Temperature.  
1n  
30  
25  
20  
15  
10  
5
VDD = 5.5 V  
100p  
Input Bias Current  
10p  
1p  
f = 10 kHz  
V
DD
= 5.5 V  
0.1  
0.1p  
Input Offset Current  
0.01p  
0
Ambient Temperature (°C)  
Common Mode Input Voltage (V)  
FIGURE 2-8:  
Input Noise Voltage Density  
FIGURE 2-11:  
Input Bias, Offset Currents  
vs. Common Mode Input Voltage.  
vs. Ambient Temperature.  
100  
250  
PSRR+  
Representative Part  
CMRR  
VDD = 5.5 V  
90  
80  
70  
60  
50  
40  
30  
20  
200  
TA = +125°C  
150  
100  
50  
PSRR-  
TA = +85°C  
0
TA = +25°C  
-50  
10  
100  
1k
Frequency (Hz)  
10k  
100k
1M  
Common Mode Input Voltage (V)  
FIGURE 2-9:  
CMRR, PSRR vs.  
FIGURE 2-12:  
Input Bias Current vs.  
Frequency.  
Common Mode Input Voltage.  
DS20002324C-page 8  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,  
VL = VDD/2, RL = 10 kto VL and CL = 20 pF.  
155  
140  
125  
110  
95  
140  
120  
100  
80  
VDD = 5.5V  
60  
+125°C  
+85°C  
+25°C  
-40°C  
VDD = 2.0V  
40  
80  
VCM = VDD/4  
VCM = VDD/4  
20  
65  
0
50  
-50 -25  
0
25  
50  
75  
100 125  
Ambient Temperature (°C)  
Power Supply Voltage (V)  
FIGURE 2-13:  
Quiescent Current vs.  
FIGURE 2-16:  
Quiescent Current vs.  
Ambient Temperature.  
Power Supply Voltage.  
145  
130  
115  
100  
85  
120  
0
Open-Loop Gain  
100  
80  
60  
40  
20  
0
-30  
-60  
Open-Loop Phase  
-90  
-120  
-150  
-180  
-210  
70  
VDD = 2.0V  
55  
40  
-20  
1.
10  
1
100 1k10k 100k1M10M  
Frequency (Hz)  
Common Mode Input Voltage (V)  
FIGURE 2-14:  
Quiescent Current vs.  
FIGURE 2-17:  
Open-Loop Gain, Phase vs.  
Common Mode Input Voltage.  
Frequency.  
150  
140  
130  
120  
110  
100  
90  
145  
130  
115  
100  
85  
VDD = 5.5V  
VDD = 2.0V  
70  
VDD = 5.5V  
55  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
Common Mode Input Voltage (V)  
Temperature (°C)  
FIGURE 2-15:  
Quiescent Current vs.  
FIGURE 2-18:  
DC Open-Loop Gain vs.  
Common Mode Input Voltage.  
Ambient Temperature.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 9  
MCP6471/2/4  
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,  
VL = VDD/2, RL = 10 kto VL and CL = 20 pF.  
10  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
70  
60  
50  
40  
30  
20  
10  
0
VDD = 5.5V  
Phase Margin  
VDD = 2.0V  
1
Gain Bandwidth Product  
VDD = 2.0V  
0.1  
100  
1k  
10k  
100k  
1M  
10M
-50 -25  
0
25  
50  
75 100 125  
Ambient Temperature (°C)  
Frequency (Hz)  
FIGURE 2-19:  
Gain Bandwidth Product,  
FIGURE 2-22:  
Output Voltage Swing vs.  
Phase Margin vs. Ambient Temperature.  
Frequency.  
1000  
3.5  
70  
60  
50  
40  
30  
20  
10  
0
VDD = 2.0V  
3.0  
Phase Margin  
VDD - VOH  
100  
10  
1
2.5  
2.0  
VOL - VSS  
1.5  
1.0  
0.5  
0.0  
Gain Bandwidth Product  
VDD = 5.5V  
0.1  
0.01  
0.1  
1
10  
-50 -25  
0
25  
50  
75 100 125  
Output Current (mA)  
Ambient Temperature (°C)  
FIGURE 2-20:  
Gain Bandwidth Product,  
FIGURE 2-23:  
Output Voltage Headroom  
Phase Margin vs. Ambient Temperature.  
vs. Output Current.  
60  
1000  
50  
40  
-40°C  
+25°C  
+85°C  
+125°C  
VDD = 5.5V  
100  
VDD - VOH  
30  
20  
10  
VOL - VSS  
0
10  
1
-10  
-20  
-30  
-40  
-50  
-60  
+125°C  
+85°C  
+25°C  
-40°C  
0.1  
0.01  
0.1  
1
10  
100  
Power Supply Voltage (V)  
Output Current (mA)  
FIGURE 2-21:  
Output Short Circuit Current  
FIGURE 2-24:  
Output Voltage Headroom  
vs. Power Supply Voltage.  
vs. Output Current.  
DS20002324C-page 10  
2012-2013 Microchip Technology Inc.  
 
 
MCP6471/2/4  
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,  
VL = VDD/2, RL = 10 kto VL and CL = 20 pF.  
7
6
VDD - VOH  
5
4
3
2
1
0
VOL - VSS  
VDD = 2.0V  
VDD = 5 V  
G = +1 V/V  
-50  
-25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Time (2 µs/div)  
FIGURE 2-25:  
Output Voltage Headroom  
FIGURE 2-28:  
Small Signal Non-Inverting  
vs. Ambient Temperature.  
Pulse Response.  
10  
9
VDD - VOH  
VDD = 5 V  
G = -1 V/V  
8
7
6
5
4
3
2
1
0
VOL - VSS  
VDD = 5.5V  
-50  
-25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Time (2 µs/div)  
FIGURE 2-26:  
Output Voltage Headroom  
FIGURE 2-29:  
Small Signal Inverting Pulse  
vs. Ambient Temperature.  
Response.  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.8  
Falling Edge, VDD = 5.5V  
Rising Edge, VDD = 5.5V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Falling Edge, VDD = 2.0V  
Rising Edge, VDD = 2.0V  
VDD = 5 V  
G = +1 V/V  
-50  
-25  
0
25  
50  
75  
100 125  
Ambient Temperature (°C)  
Time (5 µs/div)  
FIGURE 2-27:  
Slew Rate vs. Ambient  
FIGURE 2-30:  
Large Signal Non-Inverting  
Temperature.  
Pulse Response.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 11  
MCP6471/2/4  
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.0V to +5.5V, VSS = GND, VCM = VDD/2, VOUT VDD/2,  
VL = VDD/2, RL = 10 kto VL and CL = 20 pF.  
1m  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
100µ  
VDD = 5 V  
G = -1 V/V  
10µ  
1µ  
100n  
+125°C  
+85°C  
+25°C  
-40°C  
10n  
1.0E+03  
1n  
100p  
10p  
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0  
VIN (V)  
Time (5 µs/div)  
FIGURE 2-31:  
Large Signal Inverting Pulse  
FIGURE 2-34:  
Measured Input Current vs.  
Response.  
Input Voltage (below VSS).  
100  
90  
80  
70  
60  
50  
6
5
4
VOUT  
VIN  
3
2
VDD = 5 V  
G = +2 V/V  
1
Input Referred  
40  
0
30  
20  
-1  
100  
1k  
10k  
100k  
1M  
Time (1 ms/div)  
Frequency (Hz)  
FIGURE 2-32:  
The MCP6471/2/4 Shows  
FIGURE 2-35:  
Channel-to-Channel  
No Phase Reversal.  
Separation vs. Frequency (MCP6472/4 only).  
1000  
100  
10  
GN:  
101 V/V  
11 V/V  
1 V/V  
1
10  
100  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
FIGURE 2-33:  
Closed Loop Output  
Impedance vs. Frequency.  
DS20002324C-page 12  
2012-2013 Microchip Technology Inc.  
 
 
 
MCP6471/2/4  
3.0  
PIN DESCRIPTIONS  
Descriptions of the pins are listed in Table 3-1.  
TABLE 3-1:  
MCP6471  
PIN FUNCTION TABLE  
MCP6472  
MCP6474  
Symbol  
Description  
SC70, SOT-23  
SOIC, MSOP  
2x3 TDFN  
SOIC, TSSOP  
1
1
2
1
2
1
2
V
OUT, VOUTA  
Analog Output (op amp A)  
Inverting Input (op amp A)  
Non-inverting Input (op amp A)  
Positive Power Supply  
4
VIN–, VINA  
–
3
3
3
3
VIN+, VINA  
VDD  
+
5
8
8
4
—
—
—
—
—
—
2
5
5
5
VINB  
+
–
Non-inverting Input (op amp B)  
Inverting Input (op amp B)  
Analog Output (op amp B)  
Analog Output (op amp C)  
Inverting Input (op amp C)  
Non-Inverting Input (op amp C)  
Negative Power Supply  
6
6
6
VINB  
7
7
7
VOUTB  
VOUTC  
—
—
—
4
—
—
—
4
8
9
VINC  
–
+
10  
11  
12  
13  
14  
—
VINC  
VSS  
—
—
—
—
—
—
—
—
—
—
—
9
VIND  
+
Non-Inverting Input (op amp D)  
Inverting Input (op amp D)  
Analog Output (op amp D)  
Exposed Thermal Pad (EP);  
VIND  
–
VOUTD  
EP  
must be connected to VSS  
.
3.1  
Analog Outputs  
3.4  
Exposed Thermal Pad (EP)  
The output pins are low-impedance voltage sources.  
There is an internal electrical connection between the  
Exposed Thermal Pad (EP) and the VSS pin; they must  
be connected to the same potential on the Printed  
Circuit Board (PCB).  
3.2  
Analog Inputs  
The non-inverting and inverting inputs are  
high-impedance CMOS inputs with low bias currents.  
This pad can be connected to a PCB ground plane to  
provide a larger heat sink. This improves the package  
thermal resistance (JA).  
3.3  
Power Supply Pins  
The positive power supply (VDD) is 2.0V to 5.5V higher  
than the negative power supply (VSS). For normal  
operation, the other pins are at voltages between VSS  
and VDD  
.
Typically, these parts are used in single-supply  
operation. In this case, VSS is connected to ground and  
VDD is connected to the supply. VDD will need bypass  
capacitors.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 13  
 
 
MCP6471/2/4  
NOTES:  
DS20002324C-page 14  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
4.0  
APPLICATION INFORMATION  
VDD  
The MCP6471/2/4 family of op amps is manufactured  
using Microchip’s state-of-the-art CMOS process and  
is specifically designed for low-power, high-precision  
applications.  
D1 D2  
V1  
V2  
VOUT  
4.1  
Inputs  
PHASE REVERSAL  
MCP647X  
4.1.1  
The MCP6471/2/4 op amps are designed to prevent  
phase reversal when the input pins exceed the supply  
voltages. Figure 2-32 shows the input voltage  
exceeding the supply voltage without any phase  
reversal.  
FIGURE 4-2:  
Inputs.  
Protecting the Analog  
A significant amount of current can flow out of the  
inputs when the Common mode voltage (VCM) is below  
ground (VSS), as shown in Figure 2-34.  
4.1.2  
INPUT VOLTAGE LIMITS  
4.1.3  
INPUT CURRENT LIMITS  
In order to prevent damage and/or improper operation  
of these amplifiers, the circuit must limit the voltages at  
the input pins (see Section 1.1 “Absolute Maximum  
Ratings †”).  
In order to prevent damage and/or improper operation  
of these amplifiers, the circuit must limit the currents  
into the input pins (see Section 1.1 “Absolute  
Maximum Ratings †”).  
The ESD protection on the inputs can be depicted as  
shown in Figure 4-1. This structure was chosen to  
protect the input transistors against many (but not all)  
overvoltage conditions, and to minimize the input bias  
current (IB).  
Figure 4-3 shows one approach to protect these inputs.  
The R1 and R2 resistors limit the possible currents in or  
out of the input pins (and the ESD diodes, D1 and D2).  
The diode currents will go through either VDD or VSS  
.
VDD  
Bond  
VDD  
Pad  
D1 D2  
V1  
R1  
Bond  
Pad  
Bond  
Pad  
Input  
Stage  
VOUT  
MCP647X  
VIN+  
VIN–  
V2  
R2  
Bond  
Pad  
VSS  
R3  
VSS – min(V1,V2)  
2 mA  
max(V1,V2) – VDD  
2 mA  
min (R1,R2) >  
min (R1,R2) >  
FIGURE 4-1:  
Structures.  
Simplified Analog Input ESD  
The input ESD diodes clamp the inputs when they try  
to go more than one diode drop below VSS. They also  
clamp any voltages that go well above VDD. Their  
breakdown voltage is high enough to allow normal  
operation, but not low enough to protect against slow  
overvoltage (beyond VDD) events. Very fast ESD  
events (that meet the specification) are limited so that  
damage does not occur.  
FIGURE 4-3:  
Inputs.  
Protecting the Analog  
In some applications, it may be necessary to prevent  
excessive voltages from reaching the op amp inputs;  
Figure 4-2 shows one approach to protect these inputs.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 15  
 
 
 
MCP6471/2/4  
Figure 4-5 gives the recommended RISO values for  
different capacitive loads and gains. The x-axis is the  
normalized load capacitance (CL/GN), where GN is the  
circuit’s noise gain. For non-inverting gains, GN and the  
Signal Gain are equal. For inverting gains, GN is  
1 + |Signal Gain| (e.g., -1V/V gives GN = +2V/V).  
4.1.4  
NORMAL OPERATION  
The inputs of the MCP6471/2/4 op amps use two  
differential input stages in parallel. One operates at a  
low Common mode input voltage (VCM), while the other  
operates at a high VCM. With this topology, the device  
operates with a VCM up to 0.3V above VDD and 0.3V  
below VSS (refer to Figures 2-3 and 2-4). The input  
offset voltage is measured at VCM = VSS – 0.3V and  
VDD + 0.3V to ensure proper operation.  
After selecting RISO for your circuit, double check the  
resulting frequency response peaking and step  
response overshoot. Modify RISO’s value until the  
response is reasonable. Bench evaluation and  
simulations with the MCP6471/2/4 SPICE macro  
model are helpful.  
The transition between the input stages occurs when  
VCM is near VDD – 1.1V (refer to Figures 2-3 and 2-4).  
For the best distortion performance and gain linearity,  
with non-inverting gains, avoid this region of operation.  
1000  
VDD = 5.5 V  
RL = 10 kȍ  
4.2  
Rail-to-Rail Output  
The output voltage range of the MCP6471/2/4 op amps  
is 0.007V (typical) and 5.493V (typical) when  
RL = 10 kis connected to VDD/2 and VDD = 5.5V.  
Refer to Figures 2-23 and 2-24 for more information.  
100  
GN:  
1 V/V  
10  
2 V/V  
t 5 V/V  
4.3  
Capacitive Loads  
Driving large capacitive loads can cause stability  
problems for voltage feedback op amps. As the load  
capacitance increases, the feedback loop’s phase  
margin decreases and the closed-loop bandwidth is  
reduced. This produces gain peaking in the frequency  
response, with overshoot and ringing in the step  
response. While a unity-gain buffer (G = +1V/V) is the  
most sensitive to capacitive loads, all gains show the  
same general behavior.  
1
10p  
100p  
1n  
10n  
0.1µ  
1µ  
Normalized Load Capacitance; CL/GN (F)  
FIGURE 4-5:  
for Capacitive Loads.  
Recommended RISO Values  
4.4  
Supply Bypass  
With this family of operational amplifiers, the power  
supply pin (VDD for single supply) should have a local  
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm  
for good high-frequency performance. It can use a bulk  
capacitor (i.e., 1 µF or larger) within 100 mm to provide  
large, slow currents. This bulk capacitor can be shared  
with other analog parts.  
When driving large capacitive loads with these op  
amps (e.g., > 100 pF when G = + 1V/V), a small series  
resistor at the output (RISO in Figure 4-4) improves the  
feedback loop’s phase margin (stability) by making the  
output load resistive at higher frequencies. The  
bandwidth will generally be lower than the bandwidth  
with no capacitance load.  
–
RISO  
VOUT  
MCP647X  
+
VIN  
CL  
FIGURE 4-4:  
Output Resistor, RISO  
Stabilizes Large Capacitive Loads.  
DS20002324C-page 16  
2012-2013 Microchip Technology Inc.  
 
 
MCP6471/2/4  
4.5  
Unused Op Amps  
4.6  
PCB Surface Leakage  
An unused op amp in a quad package (MCP6474)  
should be configured as shown in Figure 4-6. These  
circuits prevent the output from toggling and causing  
crosstalk. Circuit A sets the op amp at its minimum  
noise gain. The resistor divider produces any desired  
reference voltage within the output voltage range of the  
op amp, and the op amp buffers that reference voltage.  
Circuit B uses the minimum number of components  
and operates as a comparator, but it may draw more  
current.  
In applications where low-input bias current is critical,  
PCB surface leakage effects need to be considered.  
Surface leakage is caused by humidity, dust or other  
contamination on the board. Under low-humidity  
conditions, a typical resistance between nearby traces  
is 1012. A 5V difference would cause 5 pA of current  
to flow, which is greater than the MCP6471/2/4 family’s  
bias current at +25°C (1 pA, typical).  
The easiest way to reduce surface leakage is to use a  
guard ring around sensitive pins (or traces). The guard  
ring is biased at the same voltage as the sensitive pin.  
An example of this type of layout is shown in  
Figure 4-7.  
¼ MCP6474 (A)  
¼ MCP6474 (B)  
VDD  
VDD  
VDD  
R1  
Guard Ring  
VIN– VIN+  
VSS  
VREF  
R2  
R
2
V
= V  
--------------------  
REF  
DD  
R + R  
1
2
FIGURE 4-7:  
for Inverting Gain.  
Example Guard Ring Layout  
FIGURE 4-6:  
Unused Op Amps.  
1. Non-Inverting Gain and Unity-Gain Buffer:  
a.Connect the non-inverting pin (VIN+) to the  
input with a wire that does not touch the  
PCB surface.  
b.Connect the guard ring to the inverting input  
pin (VIN–). This biases the guard ring to the  
Common mode input voltage.  
2. Inverting Gain and Transimpedance Gain  
Amplifiers (convert current to voltage, such as  
photo detectors):  
a.Connect the guard ring to the non-inverting  
input pin (VIN+). This biases the guard ring  
to the same reference voltage as the op  
amp (e.g., VDD/2 or ground).  
b.Connect the inverting pin (VIN–) to the input  
with a wire that does not touch the PCB  
surface.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 17  
 
 
 
MCP6471/2/4  
4.7.2  
ACTIVE LOW PASS FILTER  
4.7  
Application Circuits  
The MCP6471/2/4 op amps’ low-input bias current  
makes it possible for the designer to use larger  
resistors and smaller capacitors for active low-pass  
filter applications. However, as the resistance  
increases, the noise generated also increases.  
Parasitic capacitances and the large value resistors  
could also modify the frequency response. These  
trade-offs need to be considered when selecting circuit  
elements.  
4.7.1  
PHOTO DETECTION  
The MCP6471/2/4 op amps can be used to easily  
convert the signal from a sensor that produces an  
output current (such as a photo diode) into a voltage (a  
transimpedance amplifier). This is implemented with a  
single resistor (R2) in the feedback loop of the  
amplifiers shown in Figure 4-8 and Figure 4-9. The  
optional capacitor (C2) sometimes provides stability for  
these circuits.  
Usually, the op amp bandwidth is 100x the filter cutoff  
frequency (or higher) for good performance. It is  
possible to have the op amp bandwidth 10x higher than  
the cutoff frequency, thus having a design that is more  
sensitive to component tolerances.  
A photodiode configured in the Photovoltaic mode has  
zero voltage potential placed across it (Figure 4-8). In  
this mode, the light sensitivity and linearity is  
maximized, making it best suited for precision  
applications. The key amplifier specifications for this  
application are: low-input bias current, Common mode  
input voltage range (including ground), and rail-to-rail  
output.  
Figure 4-10 and Figure 4-11 show low-pass, second-  
order, Butterworth filters with a cutoff frequency of  
10 Hz. The filter in Figure 4-10 has a non-inverting gain  
of +1 V/V, and the filter in Figure 4-11 has an inverting  
gain of -1 V/V.  
C2  
C1  
47 nF  
R2  
VOUT  
ID1  
VDD  
R2  
1.27 M  
R1  
768 k  
–
D1  
Light  
MCP647X  
VIN  
+
C2  
+
VOUT  
MCP647X  
22 nF  
–
VOUT = ID1*R2  
FIGURE 4-8:  
Photovoltaic Mode Detector.  
In contrast, a photodiode that is configured in the  
Photoconductive mode has a reverse bias voltage  
across the photo-sensing element (Figure 4-9). This  
decreases the diode capacitance, which facilitates  
high-speed operation (e.g., high-speed digital  
communications). However, the reverse bias voltage  
also increased diode leakage current and caused  
linearity errors.  
fP = 10 Hz, G = +1 V/V  
FIGURE 4-10: Second-Order, Low-Pass  
Butterworth Filter with Sallen-Key Topology.  
R2  
618 k  
R3  
1.00 M  
C1  
8.2 nF  
R1  
618 k  
C2  
R2  
VIN  
VOUT  
C2  
47 nF  
ID1  
VOUT  
–
VDD  
–
MCP647X  
D1  
VDD/2  
+
Light  
MCP647X  
+
fP = 10 Hz, G = -1 V/V  
VOUT = ID1*R2  
VBIAS < 0V  
VBIAS  
FIGURE 4-11:  
Second-Order, Low-Pass  
Butterworth Filter with Multiple-Feedback  
Topology.  
FIGURE 4-9:  
Detector.  
Photoconductive Mode  
DS20002324C-page 18  
2012-2013 Microchip Technology Inc.  
 
 
 
 
MCP6471/2/4  
4.7.3  
PH ELECTRODE AMPLIFIER  
The MCP6471/2/4 op amps can be used for sensing  
applications where the sensor has high output  
impedance, such as a pH electrode sensor; its output  
impedance is in the range of 1 Mto 1G. The key op  
amp specifications for these kinds of applications are  
low-input bias current and high-input impedance.  
A typical sensing circuit is shown in Figure 4-12, it is  
implemented with a non-inverting amplifier which has a  
gain of 1+R2/R1. The input voltage error due to input  
bias current is equal to IB*ROUT, which is amplified by  
1+R2/R1 at the output. To minimize the voltage error  
and get the VOUT with better accuracy, the IB must be  
small enough.  
R2  
R1  
–
VOUT  
MCP647X  
+
VIN  
ROUT  
VSEN  
pH electrode  
+
–
VSEN is the sensed voltage by pH electrode  
ROUT is the pH electrode’s output impedance  
FIGURE 4-12:  
pH Electrode Amplifier.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 19  
 
MCP6471/2/4  
NOTES:  
DS20002324C-page 20  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
5.4  
Analog Demonstration and  
Evaluation Boards  
5.0  
DESIGN AIDS  
Microchip Technology Inc. provides the basic design  
tools needed for the MCP6471/2/4 family of op amps.  
Microchip offers  
Demonstration and Evaluation Boards that are  
designed to help you achieve faster time to market. For  
a
broad spectrum of Analog  
5.1  
SPICE Macro Model  
a
complete listing of these boards and their  
corresponding user’s guides and technical information,  
visit the Microchip web site:  
www.microchip.com/analogtools.  
The latest SPICE macro model for the MCP6471/2/4  
op amps is available on the Microchip web site at  
www.microchip.com. The model was written and tested  
in PSpice, owned by Orcad (Cadence®). For other  
simulators, translation may be required.  
Some boards that are especially useful include:  
• MCP6XXX Amplifier Evaluation Board 1  
• MCP6XXX Amplifier Evaluation Board 2  
• MCP6XXX Amplifier Evaluation Board 3  
• MCP6XXX Amplifier Evaluation Board 4  
• Active Filter Demo Board Kit  
• 5/6-Pin SOT-23 Evaluation Board, part number  
VSUPEV2  
• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,  
part number SOIC8EV  
The model covers a wide aspect of the op amp’s  
electrical specifications. Not only does the model cover  
voltage, current and resistance of the op amp, but it  
also covers the temperature and noise effects on the  
behavior of the op amp. The model has not been  
verified outside the specification range listed in the op  
amp data sheet. The model behaviors under these  
conditions cannot be guaranteed to match the actual  
op amp performance.  
5.5  
Application Notes  
Moreover, the model is intended to be an initial design  
tool. Bench testing is a very important part of any  
design and cannot be replaced with simulations. Also,  
simulation results using this macro model need to be  
validated by comparing them to the data sheet  
specifications and characteristic curves.  
The following Microchip analog design note and  
application notes are available on the Microchip web  
site at www.microchip.com/appnotes, and are  
recommended as supplemental reference resources.  
• ADN003: “Select the Right Operational Amplifier  
for your Filtering Circuits”, DS21821  
• AN722: “Operational Amplifier Topologies and DC  
Specifications”, DS00722  
• AN723: “Operational Amplifier AC Specifications  
and Applications”, DS00723  
• AN884: “Driving Capacitive Loads With Op  
Amps”, DS00884  
• AN990: “Analog Sensor Conditioning Circuits –  
An Overview”, DS00990  
5.2  
FilterLab Software  
Microchip’s FilterLab software is an innovative software  
tool that simplifies analog active filter (using op amps)  
design. Available at no cost from the Microchip web site  
at www.microchip.com/filterlab, the FilterLab design  
tool provides full schematic diagrams of the filter circuit  
with component values. It also outputs the filter circuit  
in SPICE format, which can be used with the macro  
model to simulate actual filter performance.  
• AN1177: “Op Amp Precision Design: DC Errors”,  
DS01177  
• AN1228: “Op Amp Precision Design: Random  
Noise”, DS01228  
5.3  
MAPS (Microchip Advanced Part  
Selector)  
• AN1297: “Microchip’s Op Amp SPICE Macro  
Models”’ DS01297  
• AN1332: “Current Sensing Circuit Concepts and  
Fundamentals”’ DS01332  
MAPS is a software tool that helps semiconductor  
professionals efficiently identify Microchip devices that  
fit a particular design requirement. Available at no cost,  
MAPS is an overall selection tool for Microchip’s  
product portfolio that includes analog, memory, MCUs  
and DSCs. Using this tool, you can define a filter to sort  
features for a parametric search of devices and export  
side-by-side technical comparison reports. Helpful links  
are also provided for data sheets, purchases and  
sampling of Microchip parts. The web site is available  
at www.microchip.com/maps.  
• AN1494: “Using MCP6491 Op Amps for  
Photodetection Applications" DS01494  
These application notes and others are listed in:  
• “Signal Chain Design Guide”, DS21825  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 21  
 
MCP6471/2/4  
NOTES:  
DS20002324C-page 22  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
6.0  
6.1  
PACKAGING INFORMATION  
Package Marking Information  
Example  
3E25  
5-Lead SOT-23 (MCP6471 only)  
Part Number  
MCP6471T-E/OT  
Code  
3ENN  
5-Lead SC-70 (MCP6471 only)  
Example  
DP25  
Part Number  
Code  
MCP6471T-E/LTY  
DPNN  
8-Lead MSOP (3x3 mm) (MCP6472 only)  
Example  
6472E  
1320256  
8-Lead SOIC (3.90 mm) (MCP6472 only)  
Example  
MCP6472  
E/SN1320  
256  
Legend: XX...X Customer-specific information  
Y
Year code (last digit of calendar year)  
YY  
WW  
NNN  
Year code (last 2 digits of calendar year)  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
e
3
Pb-free JEDEC designator for Matte Tin (Sn)  
*
This package is Pb-free. The Pb-free JEDEC designator (  
can be found on the outer packaging for this package.  
)
e3  
Note: In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line, thus limiting the number of available  
characters for customer-specific information.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 23  
MCP6471/2/4  
8-Lead TDFN (2x3x0.75 mm) (MCP6472 only)  
Example  
Part Number  
Code  
ABY  
320  
25  
MCP6472T-E/MNY  
ABY  
14-Lead SOIC (3.90 mm) (MCP6474 only)  
Example  
MCP6474  
E/SL  
1320256  
14-Lead TSSOP (4.4 mm) (MCP6474 only)  
Example  
XXXXXXXX  
YYWW  
6474E/ST  
1320  
256  
NNN  
DS20002324C-page 24  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
5-Lead Plastic Small Outine Transistor (LTY) [SC70]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
D
b
1
3
2
E1  
E
4
5
e
e
A
A2  
c
A1  
L
ꢧꢆꢃꢍꢇ  
ꢕꢨꢩꢩꢨꢕꢌꢣꢌꢪꢜ  
ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢉꢩꢃꢄꢃꢍꢇ  
ꢕꢨꢫ  
ꢫꢬꢕ  
ꢕꢛꢭ  
ꢫꢐꢄꢮꢅꢓꢉꢈꢑꢉꢯꢃꢆꢇ  
ꢯꢃꢍꢎꢒ  
ꢫ
ꢅ
ꢟ
ꢗꢁꢰꢟꢉꢠꢜꢡ  
ꢬꢥꢅꢓꢊꢏꢏꢉꢱꢅꢃꢚꢒꢍ  
ꢕꢈꢏꢋꢅꢋꢉꢯꢊꢎꢴꢊꢚꢅꢉꢣꢒꢃꢎꢴꢆꢅꢇꢇ  
ꢜꢍꢊꢆꢋꢈꢑꢑ  
ꢛ
ꢗꢁꢲꢗ  
ꢗꢁꢲꢗ  
ꢗꢁꢗꢗ  
ꢀꢁꢲꢗ  
ꢀꢁꢀꢟ  
ꢀꢁꢲꢗ  
ꢗꢁꢀꢗ  
ꢗꢁꢗꢲ  
ꢗꢁꢀꢟ  
ꢳ
ꢳ
ꢳ
ꢘꢁꢀꢗ  
ꢀꢁꢘꢟ  
ꢘꢁꢗꢗ  
ꢗꢁꢘꢗ  
ꢳ
ꢀꢁꢀꢗ  
ꢀꢁꢗꢗ  
ꢗꢁꢀꢗ  
ꢘꢁꢞꢗ  
ꢀꢁꢶꢟ  
ꢘꢁꢘꢟ  
ꢗꢁꢞꢰ  
ꢗꢁꢘꢰ  
ꢗꢁꢞꢗ  
ꢛꢘ  
ꢛꢀ  
ꢌ
ꢌꢀ  
ꢂ
ꢩ
ꢎ
ꢮ
ꢬꢥꢅꢓꢊꢏꢏꢉꢵꢃꢋꢍꢒ  
ꢕꢈꢏꢋꢅꢋꢉꢯꢊꢎꢴꢊꢚꢅꢉꢵꢃꢋꢍꢒ  
ꢬꢥꢅꢓꢊꢏꢏꢉꢩꢅꢆꢚꢍꢒ  
ꢷꢈꢈꢍꢉꢩꢅꢆꢚꢍꢒ  
ꢩꢅꢊꢋꢉꢣꢒꢃꢎꢴꢆꢅꢇꢇ  
ꢩꢅꢊꢋꢉꢵꢃꢋꢍꢒ  
ꢳ
ꢀꢁꢂꢃꢄꢅ  
ꢀꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢇꢉꢂꢉꢊꢆꢋꢉꢌꢀꢉꢋꢈꢉꢆꢈꢍꢉꢃꢆꢎꢏꢐꢋꢅꢉꢄꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢁꢉꢕꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢉꢇꢒꢊꢏꢏꢉꢆꢈꢍꢉꢅꢖꢎꢅꢅꢋꢉꢗꢁꢀꢘꢙꢉꢄꢄꢉꢔꢅꢓꢉꢇꢃꢋꢅꢁ  
ꢘꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢃꢆꢚꢉꢊꢆꢋꢉꢍꢈꢏꢅꢓꢊꢆꢎꢃꢆꢚꢉꢔꢅꢓꢉꢛꢜꢕꢌꢉꢝꢀꢞꢁꢟꢕꢁ  
ꢠꢜꢡꢢ ꢠꢊꢇꢃꢎꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢁꢉꢣꢒꢅꢈꢓꢅꢍꢃꢎꢊꢏꢏꢤꢉꢅꢖꢊꢎꢍꢉꢥꢊꢏꢐꢅꢉꢇꢒꢈꢦꢆꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢇꢁ  
B  
ꢕꢃꢎꢓꢈꢎꢒꢃꢔ ꢣꢅꢎꢒꢆꢈꢏꢈꢚꢤ ꢂꢓꢊꢦꢃꢆꢚ ꢡꢗꢞꢸꢗꢰꢀꢠ  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 25  
MCP6471/2/4  
5-Lead Plastic Small Outine Transistor (LTY) [SC70]  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20002324C-page 26  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
ꢆꢇꢈꢃꢉꢊꢋꢌꢍꢉꢄꢂꢎꢏꢋꢐꢑꢉꢍꢍꢋꢒꢓꢂꢍꢎꢔꢃꢋꢕꢖꢉꢔꢄꢎꢄꢂꢁꢖꢋꢗꢒꢕꢘꢋꢙꢐꢒꢕꢇꢚꢛꢜ  
ꢀꢁꢂꢃꢅ ꢷꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢴꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢹꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢯꢊꢎꢴꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ  
ꢒꢍꢍꢔꢢꢺꢺꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢺꢔꢊꢎꢴꢊꢚꢃꢆꢚ  
b
N
E
E1  
3
2
1
e
e1  
D
A2  
c
A
φ
A1  
L
L1  
ꢧꢆꢃꢍꢇ  
ꢕꢨꢩꢩꢨꢕꢌꢣꢌꢪꢜ  
ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢉꢩꢃꢄꢃꢍꢇ  
ꢕꢨꢫ  
ꢫꢬꢕ  
ꢕꢛꢭ  
ꢫꢐꢄꢮꢅꢓꢉꢈꢑꢉꢯꢃꢆꢇ  
ꢩꢅꢊꢋꢉꢯꢃꢍꢎꢒ  
ꢫ
ꢅ
ꢟ
ꢗꢁꢻꢟꢉꢠꢜꢡ  
ꢬꢐꢍꢇꢃꢋꢅꢉꢩꢅꢊꢋꢉꢯꢃꢍꢎꢒ  
ꢬꢥꢅꢓꢊꢏꢏꢉꢱꢅꢃꢚꢒꢍ  
ꢕꢈꢏꢋꢅꢋꢉꢯꢊꢎꢴꢊꢚꢅꢉꢣꢒꢃꢎꢴꢆꢅꢇꢇ  
ꢜꢍꢊꢆꢋꢈꢑꢑ  
ꢬꢥꢅꢓꢊꢏꢏꢉꢵꢃꢋꢍꢒ  
ꢕꢈꢏꢋꢅꢋꢉꢯꢊꢎꢴꢊꢚꢅꢉꢵꢃꢋꢍꢒ  
ꢬꢥꢅꢓꢊꢏꢏꢉꢩꢅꢆꢚꢍꢒ  
ꢷꢈꢈꢍꢉꢩꢅꢆꢚꢍꢒ  
ꢷꢈꢈꢍꢔꢓꢃꢆꢍ  
ꢷꢈꢈꢍꢉꢛꢆꢚꢏꢅ  
ꢩꢅꢊꢋꢉꢣꢒꢃꢎꢴꢆꢅꢇꢇ  
ꢩꢅꢊꢋꢉꢵꢃꢋꢍꢒ  
ꢅꢀ  
ꢛ
ꢛꢘ  
ꢛꢀ  
ꢌ
ꢌꢀ  
ꢂ
ꢩ
ꢀꢁꢻꢗꢉꢠꢜꢡ  
ꢗꢁꢻꢗ  
ꢗꢁꢲꢻ  
ꢗꢁꢗꢗ  
ꢘꢁꢘꢗ  
ꢀꢁꢶꢗ  
ꢘꢁꢙꢗ  
ꢗꢁꢀꢗ  
ꢗꢁꢶꢟ  
ꢗꢼ  
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢳ
ꢀꢁꢞꢟ  
ꢀꢁꢶꢗ  
ꢗꢁꢀꢟ  
ꢶꢁꢘꢗ  
ꢀꢁꢲꢗ  
ꢶꢁꢀꢗ  
ꢗꢁꢰꢗ  
ꢗꢁꢲꢗ  
ꢶꢗꢼ  
ꢩꢀ  
ꢀ
ꢎ
ꢮ
ꢗꢁꢗꢲ  
ꢗꢁꢘꢗ  
ꢗꢁꢘꢰ  
ꢗꢁꢟꢀ  
ꢀꢁꢂꢃꢄꢅ  
ꢀꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢇꢉꢂꢉꢊꢆꢋꢉꢌꢀꢉꢋꢈꢉꢆꢈꢍꢉꢃꢆꢎꢏꢐꢋꢅꢉꢄꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢁꢉꢕꢈꢏꢋꢉꢑꢏꢊꢇꢒꢉꢈꢓꢉꢔꢓꢈꢍꢓꢐꢇꢃꢈꢆꢇꢉꢇꢒꢊꢏꢏꢉꢆꢈꢍꢉꢅꢖꢎꢅꢅꢋꢉꢗꢁꢀꢘꢙꢉꢄꢄꢉꢔꢅꢓꢉꢇꢃꢋꢅꢁ  
ꢘꢁ ꢂꢃꢄꢅꢆꢇꢃꢈꢆꢃꢆꢚꢉꢊꢆꢋꢉꢍꢈꢏꢅꢓꢊꢆꢎꢃꢆꢚꢉꢔꢅꢓꢉꢛꢜꢕꢌꢉꢝꢀꢞꢁꢟꢕꢁ  
ꢠꢜꢡꢢ ꢠꢊꢇꢃꢎꢉꢂꢃꢄꢅꢆꢇꢃꢈꢆꢁꢉꢣꢒꢅꢈꢓꢅꢍꢃꢎꢊꢏꢏꢤꢉꢅꢖꢊꢎꢍꢉꢥꢊꢏꢐꢅꢉꢇꢒꢈꢦꢆꢉꢦꢃꢍꢒꢈꢐꢍꢉꢍꢈꢏꢅꢓꢊꢆꢎꢅꢇꢁ  
ꢕꢃꢎꢓꢈꢎꢒꢃꢔ ꢣꢅꢎꢒꢆꢈꢏꢈꢚꢤ ꢂꢓꢊꢦꢃꢆꢚ ꢡꢗꢞꢸꢗꢻꢀꢠ  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 27  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20002324C-page 28  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 29  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20002324C-page 30  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 31  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20002324C-page 32  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 33  
MCP6471/2/4  
ꢝꢇꢈꢃꢉꢊꢋꢌꢍꢉꢄꢂꢎꢏꢋꢐꢑꢉꢍꢍꢋꢒꢓꢂꢍꢎꢔꢃꢋꢗꢐꢀꢘꢋꢞꢋꢀꢉꢖꢖꢁꢟꢠꢋꢛꢡꢢꢣꢋꢑꢑꢋꢤꢁꢊꢥꢋꢙꢐꢒꢦꢧꢜ  
ꢀꢁꢂꢃꢅ ꢷꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢴꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢹꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢯꢊꢎꢴꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ  
ꢒꢍꢍꢔꢢꢺꢺꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢺꢔꢊꢎꢴꢊꢚꢃꢆꢚ  
DS20002324C-page 34  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 35  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20002324C-page 36  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
ꢝꢇꢈꢃꢉꢊꢋꢌꢍꢉꢄꢂꢎꢏꢋꢨꢓꢉꢍꢋꢩꢍꢉꢂꢠꢋꢀꢁꢋꢈꢃꢉꢊꢋꢌꢉꢏꢪꢉꢫꢃꢋꢗꢬꢀꢘꢋꢞꢋꢚꢭꢛꢭꢣꢡꢮꢆꢋꢑꢑꢋꢤꢁꢊꢥꢋꢙꢕꢨꢩꢀꢜ  
ꢀꢁꢂꢃꢅ ꢷꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢴꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢹꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢯꢊꢎꢴꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ  
ꢒꢍꢍꢔꢢꢺꢺꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢺꢔꢊꢎꢴꢊꢚꢃꢆꢚ  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 37  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20002324C-page 38  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 39  
MCP6471/2/4  
ꢀꢁꢂꢃꢅ ꢷꢈꢓꢉꢍꢒꢅꢉꢄꢈꢇꢍꢉꢎꢐꢓꢓꢅꢆꢍꢉꢔꢊꢎꢴꢊꢚꢅꢉꢋꢓꢊꢦꢃꢆꢚꢇꢹꢉꢔꢏꢅꢊꢇꢅꢉꢇꢅꢅꢉꢍꢒꢅꢉꢕꢃꢎꢓꢈꢎꢒꢃꢔꢉꢯꢊꢎꢴꢊꢚꢃꢆꢚꢉꢜꢔꢅꢎꢃꢑꢃꢎꢊꢍꢃꢈꢆꢉꢏꢈꢎꢊꢍꢅꢋꢉꢊꢍꢉ  
ꢒꢍꢍꢔꢢꢺꢺꢦꢦꢦꢁꢄꢃꢎꢓꢈꢎꢒꢃꢔꢁꢎꢈꢄꢺꢔꢊꢎꢴꢊꢚꢃꢆꢚ  
DS20002324C-page 40  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 41  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
DS20002324C-page 42  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
Note: For the most current package drawings, please see the Microchip Packaging Specification located at  
http://www.microchip.com/packaging  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 43  
MCP6471/2/4  
NOTES:  
DS20002324C-page 44  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
APPENDIX A: REVISION HISTORY  
Revision C (June 2013)  
The following is the list of modifications:  
1. Added new devices to the family (MCP6472 and  
MCP6474) and related information throughout  
the document.  
2. Updated  
thermal  
package  
resistance  
information in Table 1-3.  
3. Added Figure 2-35 in Section 2.0, Typical  
Performance Curves.  
4. Updated Section 3.0, Pin Descriptions.  
5. Added new Section 4.5, Unused Op Amps.  
6. Updated the list of reference documents in  
Section 5.5, Application Notes.  
7. Added package markings and drawings for the  
MCP6472 and MCP6474 devices.  
8. Updated Product Identification System.  
Revision B (October 2012)  
The following is the list of modifications:  
1. Updated the maximum low input offset voltage  
value in the Features.  
2. Updated the minimum and maximum input  
offset voltage in TABLE 1-1: “DC Electrical  
Specifications”.  
Revision A (September 2012)  
• Original Release of this Document.  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 45  
MCP6471/2/4  
NOTES:  
DS20002324C-page 46  
2012-2013 Microchip Technology Inc.  
MCP6471/2/4  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
Examples:  
-X  
PART NO.  
Device  
/XX  
a)  
b)  
MCP6471T-E/LTY:  
MCP6471T-E/OT:  
Tape and Reel,  
Extended Temp.,  
5LD SC70 package  
Temperature  
Range  
Package  
Tape and Reel,  
Extended Temp.,  
5LD SOT-23 package  
Device:  
MCP6471T:  
Single Op Amp (Tape and Reel)  
(SC70, SOT-23)  
MCP6472:  
MCP6472T:  
Dual Op Amp (SOIC and MSOP only)  
Dual Op Amp (Tape and Reel)  
(SOIC, MSOP and 2x3 TDFN)  
Quad Op Amp  
Quad Op Amp (Tape and Reel)  
(SOIC and TSSOP)  
c)  
d)  
MCP6472-E/MS:  
MCP6472T-E/MS:  
Extended Temp.,  
8LD MSOP package  
Tape and Reel,  
Extended Temp.,  
8LD MSOP package  
Extended Temp.,  
8LD SOIC package  
Tape and Reel,  
Extended Temp.,  
8LD SOIC package  
MCP6474:  
MCP6474T:  
e)  
f)  
MCP6472-E/SN:  
MCP6472T-E/SN:  
Temperature Range:  
Package:  
E
= -40°C to +125°C (Extended)  
g)  
MCP6472T-E/MNY:  
Tape and Reel,  
Extended Temp.,  
8LD 2x3 TDFN  
package  
LTY  
OT  
=
=
Plastic Package (SC70), 5-lead  
Plastic Small Outline Transistor, (SOT-23),  
5-lead  
Plastic Dual Flat, No Lead, (2x3 TDFN),  
8-lead (TDFN)  
Lead Plastic Small Outline (150 mil body),  
8-lead (SOIC)  
Plastic MSOP, 8-lead  
Plastic Small Outline, (150 mil body),  
14-lead (SOIC)  
Plastic Thin Shrink Small Outline  
(150 mil body), 14-lead (TSSOP)  
MNY*  
SN  
=
=
h)  
i)  
MCP6474-E/SL:  
MCP6474T-E/SL:  
Extended Temp.,  
14LD SOIC package  
Tape and Reel,  
Extended Temp.,  
14LD SOIC package  
Extended Temp.,  
14LD TSSOP  
package  
Tape and Reel,  
Extended Temp.,  
14LD TSSOP  
package  
MS  
SL  
=
=
ST  
=
j)  
MCP6474-E/ST:  
MCP6474T-E/ST:  
* Y = Nickel palladium gold manufacturing designator. Only  
available on the TDFN package.  
k)  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 47  
MCP6471/2/4  
NOTES:  
DS20002324C-page 48  
2012-2013 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is provided only for your convenience  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
MICROCHIP MAKES NO REPRESENTATIONS OR  
WARRANTIES OF ANY KIND WHETHER EXPRESS OR  
IMPLIED, WRITTEN OR ORAL, STATUTORY OR  
OTHERWISE, RELATED TO THE INFORMATION,  
INCLUDING BUT NOT LIMITED TO ITS CONDITION,  
QUALITY, PERFORMANCE, MERCHANTABILITY OR  
FITNESS FOR PURPOSE. Microchip disclaims all liability  
arising from this information and its use. Use of Microchip  
devices in life support and/or safety applications is entirely at  
the buyer’s risk, and the buyer agrees to defend, indemnify and  
hold harmless Microchip from any and all damages, claims,  
suits, or expenses resulting from such use. No licenses are  
conveyed, implicitly or otherwise, under any Microchip  
intellectual property rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, dsPIC,  
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,  
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash  
and UNI/O are registered trademarks of Microchip Technology  
Incorporated in the U.S.A. and other countries.  
32  
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,  
MTP, SEEVAL and The Embedded Control Solutions  
Company are registered trademarks of Microchip Technology  
Incorporated in the U.S.A.  
Silicon Storage Technology is a registered trademark of  
Microchip Technology Inc. in other countries.  
Analog-for-the-Digital Age, Application Maestro, BodyCom,  
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,  
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,  
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial  
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB  
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code  
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,  
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,  
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA  
and Z-Scale are trademarks of Microchip Technology  
Incorporated in the U.S.A. and other countries.  
SQTP is a service mark of Microchip Technology Incorporated  
in the U.S.A.  
GestIC and ULPP are registered trademarks of Microchip  
Technology Germany II GmbH & Co. KG, a subsidiary of  
Microchip Technology Inc., in other countries.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2012-2013, Microchip Technology Incorporated, Printed in  
the U.S.A., All Rights Reserved.  
Printed on recycled paper.  
ISBN: 978-1-62077-245-4  
QUALITY MANAGEMENT SYSTEM  
CERTIFIED BY DNV  
Microchip received ISO/TS-16949:2009 certification for its worldwide  
headquarters, design and wafer fabrication facilities in Chandler and  
Tempe, Arizona; Gresham, Oregon and design centers in California  
and India. The Company’s quality system processes and procedures  
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
== ISO/TS 16949 ==  
2012-2013 Microchip Technology Inc.  
DS20002324C-page 49  
Worldwide Sales and Service  
AMERICAS  
ASIA/PACIFIC  
ASIA/PACIFIC  
EUROPE  
Corporate Office  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7200  
Fax: 480-792-7277  
Technical Support:  
http://www.microchip.com/  
support  
Asia Pacific Office  
Suites 3707-14, 37th Floor  
Tower 6, The Gateway  
Harbour City, Kowloon  
Hong Kong  
Tel: 852-2401-1200  
Fax: 852-2401-3431  
India - Bangalore  
Tel: 91-80-3090-4444  
Fax: 91-80-3090-4123  
Austria - Wels  
Tel: 43-7242-2244-39  
Fax: 43-7242-2244-393  
Denmark - Copenhagen  
Tel: 45-4450-2828  
Fax: 45-4485-2829  
India - New Delhi  
Tel: 91-11-4160-8631  
Fax: 91-11-4160-8632  
France - Paris  
Tel: 33-1-69-53-63-20  
Fax: 33-1-69-30-90-79  
India - Pune  
Tel: 91-20-2566-1512  
Fax: 91-20-2566-1513  
Australia - Sydney  
Tel: 61-2-9868-6733  
Fax: 61-2-9868-6755  
Web Address:  
www.microchip.com  
Germany - Munich  
Tel: 49-89-627-144-0  
Fax: 49-89-627-144-44  
Japan - Osaka  
Tel: 81-6-6152-7160  
Fax: 81-6-6152-9310  
Atlanta  
Duluth, GA  
Tel: 678-957-9614  
Fax: 678-957-1455  
China - Beijing  
Tel: 86-10-8569-7000  
Fax: 86-10-8528-2104  
Italy - Milan  
Tel: 39-0331-742611  
Fax: 39-0331-466781  
Japan - Tokyo  
Tel: 81-3-6880- 3770  
Fax: 81-3-6880-3771  
China - Chengdu  
Tel: 86-28-8665-5511  
Fax: 86-28-8665-7889  
Boston  
Westborough, MA  
Tel: 774-760-0087  
Fax: 774-760-0088  
Netherlands - Drunen  
Tel: 31-416-690399  
Fax: 31-416-690340  
Korea - Daegu  
Tel: 82-53-744-4301  
Fax: 82-53-744-4302  
China - Chongqing  
Tel: 86-23-8980-9588  
Fax: 86-23-8980-9500  
Chicago  
Itasca, IL  
Tel: 630-285-0071  
Fax: 630-285-0075  
Spain - Madrid  
Tel: 34-91-708-08-90  
Fax: 34-91-708-08-91  
Korea - Seoul  
China - Hangzhou  
Tel: 86-571-2819-3187  
Fax: 86-571-2819-3189  
Tel: 82-2-554-7200  
Fax: 82-2-558-5932 or  
82-2-558-5934  
UK - Wokingham  
Tel: 44-118-921-5869  
Fax: 44-118-921-5820  
Cleveland  
Independence, OH  
Tel: 216-447-0464  
Fax: 216-447-0643  
China - Hong Kong SAR  
Tel: 852-2943-5100  
Fax: 852-2401-3431  
Malaysia - Kuala Lumpur  
Tel: 60-3-6201-9857  
Fax: 60-3-6201-9859  
Dallas  
Addison, TX  
Tel: 972-818-7423  
Fax: 972-818-2924  
China - Nanjing  
Tel: 86-25-8473-2460  
Fax: 86-25-8473-2470  
Malaysia - Penang  
Tel: 60-4-227-8870  
Fax: 60-4-227-4068  
China - Qingdao  
Tel: 86-532-8502-7355  
Fax: 86-532-8502-7205  
Philippines - Manila  
Tel: 63-2-634-9065  
Fax: 63-2-634-9069  
Detroit  
Farmington Hills, MI  
Tel: 248-538-2250  
Fax: 248-538-2260  
China - Shanghai  
Tel: 86-21-5407-5533  
Fax: 86-21-5407-5066  
Singapore  
Tel: 65-6334-8870  
Fax: 65-6334-8850  
Indianapolis  
Noblesville, IN  
Tel: 317-773-8323  
Fax: 317-773-5453  
China - Shenyang  
Tel: 86-24-2334-2829  
Fax: 86-24-2334-2393  
Taiwan - Hsin Chu  
Tel: 886-3-5778-366  
Fax: 886-3-5770-955  
Los Angeles  
China - Shenzhen  
Tel: 86-755-8864-2200  
Fax: 86-755-8203-1760  
Taiwan - Kaohsiung  
Tel: 886-7-213-7828  
Fax: 886-7-330-9305  
Mission Viejo, CA  
Tel: 949-462-9523  
Fax: 949-462-9608  
China - Wuhan  
Tel: 86-27-5980-5300  
Fax: 86-27-5980-5118  
Taiwan - Taipei  
Tel: 886-2-2508-8600  
Fax: 886-2-2508-0102  
Santa Clara  
Santa Clara, CA  
Tel: 408-961-6444  
Fax: 408-961-6445  
China - Xian  
Tel: 86-29-8833-7252  
Fax: 86-29-8833-7256  
Thailand - Bangkok  
Tel: 66-2-694-1351  
Fax: 66-2-694-1350  
Toronto  
Mississauga, Ontario,  
Canada  
China - Xiamen  
Tel: 905-673-0699  
Fax: 905-673-6509  
Tel: 86-592-2388138  
Fax: 86-592-2388130  
China - Zhuhai  
Tel: 86-756-3210040  
Fax: 86-756-3210049  
11/29/12  
DS20002324C-page 50  
2012-2013 Microchip Technology Inc.  

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