MCP662-E/SN [MICROCHIP]
60 MHz, 6 mA Op Amps; 60兆赫, 6毫安运算放大器型号: | MCP662-E/SN |
厂家: | MICROCHIP |
描述: | 60 MHz, 6 mA Op Amps |
文件: | 总42页 (文件大小:795K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCP661/2/3/5
60 MHz, 6 mA Op Amps
Features
Description
• Gain Bandwidth Product: 60 MHz (typical)
• Short Circuit Current: 90 mA (typical)
• Noise: 6.8 nV/√Hz (typical, at 1 MHz)
• Rail-to-Rail Output
The Microchip Technology, Inc. MCP661/2/3/5 family of
operational amplifiers features high gain bandwidth
product (60 MHz, typical) and high output short circuit
current (90 mA, typical). Some also provide a Chip
Select pin (CS) that supports a low power mode of
operation. These amplifiers are optimized for high
speed, low noise and distortion, single-supply
operation with rail-to-rail output and an input that
includes the negative rail.
• Slew Rate: 32 V/µs (typical)
• Supply Current: 6.0 mA (typical)
• Power Supply: 2.5V to 5.5V
• Extended Temperature Range: -40°C to +125°C
This family is offered in single (MCP661), single with
CS pin (MCP663), dual (MCP662) and dual with
two CS pins (MCP665). All devices are fully specified
from -40°C to +125°C.
Typical Applications
• Driving A/D Converters
• Power Amplifier Control Loops
• Barcode Scanners
Typical Application Circuit
• Optical Detector Amplifier
R1
R2
VDD/2
VOUT
RL
Design Aids
R3
• SPICE Macro Models
• FilterLab® Software
VIN
MCP66X
• Mindi™ Circuit Designer & Simulator
• Microchip Advanced Part Selector (MAPS)
• Analog Demonstration and Evaluation Boards
• Application Notes
Power Driver with High Gain
Package Types
MCP663
MCP661
MCP662
MCP665
SOIC
SOIC
SOIC
MSOP
VDD
V
DD
VOUTA
1
8
7
6
5
1
8
7
6
5
1
8
7
6
5
VOUTA
1
2
3
10
9
NC
CS
NC
NC
VOUTB
VINA
–
+
VOUTB
2
3
4
2
3
4
2
3
4
VINA
–
+
VIN
–
+
VDD
VOUT
NC
VIN
–
+
VDD
VOUT
NC
VINA
VINB
VINB
–
+
VINA
VINB
VINB
–
+
8
VIN
VIN
VSS 4
VSS
7
VSS
VSS
CSA
5
CSB
6
MCP662
3x3 DFN *
MCP665
3x3 DFN *
1
2
3
4
5
10
VDD
VOUTA
VDD
VOUTA
1
8
7
6
5
VINA
VINA
–
+
VOUTB
9
8
7
6
VINA
VINA
VSS
–
VOUTB
2
3
4
VINB
VINB
–
+
+
VINB
VINB
–
+
VSS
CSA
CSB
* Includes Exposed Thermal Pad (EP); see Table 3-1.
© 2009 Microchip Technology Inc.
DS22194A-page 1
MCP661/2/3/5
NOTES:
DS22194A-page 2
© 2009 Microchip Technology Inc.
MCP661/2/3/5
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
1.0
1.1
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD – VSS .......................................................................6.5V
Current at Input Pins ....................................................±2 mA
Analog Inputs (VIN+ and VIN–) †† . VSS – 1.0V to VDD + 1.0V
All other Inputs and Outputs .......... VSS – 0.3V to VDD + 0.3V
Output Short Circuit Current ................................Continuous
Current at Output and Supply Pins ..........................±150 mA
Storage Temperature ...................................-65°C to +150°C
Max. Junction Temperature ........................................+150°C
ESD protection on all pins (HBM, MM) ................≥ 1 kV, 200V
†† See Section 4.1.2 “Input Voltage and Current Limits”.
1.2
Specifications
TABLE 1-1:
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/3,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 kΩ to VL and CS = VSS (refer to Figure 1-2).
Conditions
Parameters
Sym
Min
Typ
Max
Units
Input Offset
Input Offset Voltage
VOS
-8
—
61
±1.8
±2.0
76
+8
—
—
mV
Input Offset Voltage Drift
Power Supply Rejection Ratio
Input Current and Impedance
Input Bias Current
ΔVOS/ΔTA
PSRR
µV/°C TA= -40°C to +125°C
dB
IB
IB
—
—
—
—
—
—
6
—
—
pA
Across Temperature
130
pA
pA
TA= +85°C
Across Temperature
IB
1700
5,000
—
TA= +125°C
Input Offset Current
IOS
ZCM
ZDIFF
±10
pA
Common Mode Input Impedance
Differential Input Impedance
Common Mode
1013||9
1013||2
—
Ω||pF
Ω||pF
—
Common-Mode Input Voltage Range
Common-Mode Rejection Ratio
VCMR
CMRR
CMRR
VSS − 0.3
—
79
81
VDD − 1.3
V
(Note 1)
64
66
—
—
dB
dB
VDD = 2.5V, VCM = -0.3 to 1.2V
VDD = 5.5V, VCM = -0.3 to 4.2V
Open Loop Gain
DC Open Loop Gain (large signal)
AOL
AOL
88
94
117
126
—
—
dB
dB
VDD = 2.5V, VOUT = 0.3V to 2.2V
VDD = 5.5V, VOUT = 0.3V to 5.2V
Output
Maximum Output Voltage Swing
VOL, VOH VSS + 25
OL, VOH VSS + 50
—
—
VDD − 25
VDD − 50
mV
mV
VDD = 2.5V, G = +2,
0.5V Input Overdrive
V
VDD = 5.5V, G = +2,
0.5V Input Overdrive
Output Short Circuit Current
ISC
ISC
±45
±40
±90
±80
±145
±150
mA
mA
VDD = 2.5V (Note 2)
VDD = 5.5V (Note 2)
Power Supply
Supply Voltage
VDD
IQ
2.5
3
—
6
5.5
9
V
Quiescent Current per Amplifier
mA
No Load Current
Note 1: See Figure 2-5 for temperature effects.
2: The ISC specifications are for design guidance only; they are not tested.
© 2009 Microchip Technology Inc.
DS22194A-page 3
MCP661/2/3/5
TABLE 1-2:
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS (refer to Figure 1-2).
Parameters
Sym
Min
Typ
Max Units
Conditions
AC Response
Gain Bandwidth Product
Phase Margin
GBWP
PM
—
—
—
60
65
10
—
—
—
MHz
°
G = +1
Open Loop Output Impedance
AC Distortion
ROUT
Ω
Total Harmonic Distortion plus Noise
THD+N
DG
—
—
—
—
—
0.003
0.3
—
—
—
—
—
%
%
%
°
G = +1, VOUT = 2VP-P, f = 1 kHz,
DD = 5.5V, BW = 80 kHz
V
Differential Gain, Positive Video (Note 1)
Differential Gain, Negative Video (Note 1)
Differential Phase, Positive Video (Note 1)
Differential Phase, Negative Video (Note 1)
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V, DC VIN = 0V to 0.7V
DG
0.3
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V, DC VIN = 0V to -0.7V
DP
0.3
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V, DC VIN = 0V to 0.7V
DP
0.9
°
NTSC, VDD = +2.5V, VSS = -2.5V,
G = +2, VL = 0V, DC VIN = 0V to -0.7V
Step Response
Rise Time, 10% to 90%
Slew Rate
tr
—
—
5
—
—
ns
G = +1, VOUT = 100 mVP-P
SR
32
V/µs G = +1
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Eni
eni
ini
—
—
14
6.8
4
—
—
—
µVP-P f = 0.1 Hz to 10 Hz
nV/√Hz f = 1 MHz
fA/√Hz f = 1 kHz
Note 1: These specifications are described in detail in Section 4.3 “Distortion”.
TABLE 1-3:
DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS (refer to Figure 1-1 and Figure 1-2).
Parameters
Sym
Min
Typ
Max Units
Conditions
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current
VIL
VSS
—
—
0.2VDD
—
V
ICSL
-0.1
nA
CS = 0V
VIH
ICSH
0.8VDD
VDD
—
V
—
-2
-0.7
-1
µA
µA
MΩ
nA
CS = VDD
ISS
—
CS Internal Pull Down Resistor
Amplifier Output Leakage
CS Dynamic Specifications
CS Input Hysteresis
RPD
—
—
5
—
IO(LEAK)
40
—
CS = VDD, TA = +125°C
—
—
—
—
VHYST
tOFF
0.25
200
V
CS High to Amplifier Off Time
(output goes High-Z)
ns
G = +1 V/V, VL = VSS
CS = 0.8VDD to VOUT = 0.1(VDD/2)
G = +1 V/V, VL = VSS
CS = 0.2VDD to VOUT = 0.9(VDD/2)
,
CS Low to Amplifier On Time
tON
—
2
10
µs
DS22194A-page 4
© 2009 Microchip Technology Inc.
MCP661/2/3/5
TABLE 1-4:
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: VDD = +2.5V to +5.5V, VSS = GND.
Parameters
Temperature Ranges
Sym
Min
Typ
Max Units
Conditions
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
TA
TA
TA
-40
-40
-65
—
—
—
+125
+125
+150
°C
°C
°C
(Note 1)
Thermal Package Resistances
Thermal Resistance, 8L-3x3 DFN
Thermal Resistance, 8L-SOIC
θJA
θJA
θJA
θJA
—
—
—
—
60
149.5
57
—
—
—
—
°C/W (Note 2)
°C/W
Thermal Resistance, 10L-3x3 DFN
Thermal Resistance, 10L-MSOP
°C/W (Note 2)
°C/W
202
Note 1: Operation must not cause TJ to exceed Maximum Junction Temperature specification (150°C).
2: Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
EQUATION 1-1:
1.3
Timing Diagram
GDM = RF ⁄ RG
VCM = (VP + VDD ⁄ 2) ⁄ 2
VOST = VIN– – VIN+
0 nA
(typical)
1 µA
(typical)
1 µA
(typical)
ICS
CS
VOUT = (VDD ⁄ 2) + (VP – VM) + VOST(1 + GDM
Where:
)
VIH
VIL
GDM = Differential Mode Gain
(V/V)
(V)
tON
tOFF
VCM = Op Amp’s Common Mode
VOUT
Input Voltage
High-Z
High-Z
On
VOST = Op Amp’s Total Input Offset (mV)
-6 mA
(typical)
Voltage
-1 µA
(typical)
-1 µA
(typical)
ISS
FIGURE 1-1:
Timing Diagram.
CF
6.8 pF
1.4
Test Circuits
RG
10 kΩ
RF
10 kΩ
The circuit used for most DC and AC tests is shown in
Figure 1-2. This circuit can independently set VCM and
VOUT; see Equation 1-1. Note that VCM is not the
circuit’s common mode voltage ((VP + VM)/2), and that
VDD/2
VP
VDD
VIN+
VOST includes VOS plus the effects (on the input offset
CB1
100 nF
CB2
2.2 µF
error, VOST) of temperature, CMRR, PSRR and AOL
.
MCP66X
VIN–
VOUT
VM
RL
CL
RG
RF
1 kΩ
20 pF
10 kΩ
10 kΩ
CF
6.8 pF
VL
FIGURE 1-2:
AC and DC Test Circuit for
Most Specifications.
© 2009 Microchip Technology Inc.
DS22194A-page 5
MCP661/2/3/5
NOTES:
DS22194A-page 6
© 2009 Microchip Technology Inc.
MCP661/2/3/5
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
2.1
DC Signal Inputs
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100 Samples
TA = +25°C
VDD = 2.5V and 5.5V
Representative Part
VDD = 5.5V
VDD = 2.5V
-6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
Input Offset Voltage (mV)
FIGURE 2-1:
Input Offset Voltage.
FIGURE 2-4:
Input Offset Voltage vs.
Output Voltage.
24%
0.0
100 Samples
DD = 2.5V and 5.5V
TA = -40°C to +125°C
1 Lot
Low (VCMR_L – VSS
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
V
)
-0.1
-0.2
-0.3
-0.4
-0.5
VDD = 2.5V
VDD = 5.5V
-12 -10 -8 -6 -4 -2
0
2
4
6
8
10 12
-50
-25
0
25
50
75
100 125
Ambient Temperature (°C)
Input Offset Voltage Drift (µV/°C)
FIGURE 2-2:
Input Offset Voltage Drift.
FIGURE 2-5:
Low Input Common Mode
Voltage Headroom vs. Ambient Temperature.
0.0
1.4
Representative Part
VCM = VSS
1 Lot
High (VDD – VCMR_H
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
)
1.3
1.2
1.1
1.0
VDD = 2.5V
+125°C
+85°C
+25°C
-40°C
VDD = 5.5V
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Power Supply Voltage (V)
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
FIGURE 2-3:
Input Offset Voltage vs.
FIGURE 2-6:
High Input Common Mode
Power Supply Voltage with V
= 0V.
Voltage Headroom vs. Ambient Temperature.
CM
© 2009 Microchip Technology Inc.
DS22194A-page 7
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
130
125
120
115
110
105
100
2.0
VDD = 2.5V
Representative Part
1.5
1.0
VDD = 5.5V
VDD = 2.5V
-40°C
+25°C
+85°C
+125°
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-50
-25
0
25
50
75
100
125
Input Common Mode Voltage (V)
Ambient Temperature (°C)
FIGURE 2-7:
Input Offset Voltage vs.
FIGURE 2-10:
DC Open-Loop Gain vs.
Common Mode Voltage with V = 2.5V.
Ambient Temperature.
DD
130
2.0
VDD = 5.5V
VDD = 5.5V
Representative Part
1.5
1.0
125
120
115
110
105
100
95
0.5
+125°
C
+85°C
+25°C
VDD = 2.5V
0.0
-0.5
-1.0
-1.5
-2.0
100
1k
1.E+03
10k
1.E+04
100k
1.E+05
1.E+02
Input Common Mode Voltage (V)
Load Resistance (Ω)
FIGURE 2-8:
Input Offset Voltage vs.
FIGURE 2-11:
DC Open-Loop Gain vs.
Common Mode Voltage with V = 5.5V.
Load Resistance.
DD
110
105
100
95
1.E-08
10n
VDD = 5.5V
VCM = VCMR_H
1n
1.E-09
90
IB
PSRR
85
80
100p
1.E-10
75
CMRR, VDD = 2.5V
CMRR, VDD = 5.5V
10p
1.E-11
70
65
60
| IOS
|
1p
1.E-12
-50
-25
0
25
50
75
100
125
25
45
65
85
105
125
Ambient Temperature (°C)
Ambient Temperature (°C)
FIGURE 2-9:
CMRR and PSRR vs.
FIGURE 2-12:
Input Bias and Offset
Ambient Temperature.
Currents vs. Ambient Temperature with
= +5.5V.
V
DD
DS22194A-page 8
© 2009 Microchip Technology Inc.
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
1000
800
600
400
200
0
1.E-10m3
1.E10-004µ
IB
10µ
1.E-05
1µ
1.E-06
Representative Part
TA = +125°C
100n
1.E-07
VDD = 5.5V
10n
1.E- 8
1n
1.E-09
+125°C
+85°C
+25°C
-40°C
100p
1.E-10
IOS
-200
-400
10p
1.E-11
1p
1.E-12
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Input Voltage (V)
Common Mode Input Voltage (V)
FIGURE 2-13:
Input Bias Current vs. Input
FIGURE 2-15:
Input Bias and Offset
Voltage (below V ).
Currents vs. Common Mode Input Voltage with
T = +125°C.
SS
A
60
40
20
0
IB
IOS
-20
-40
-60
Representative Part
A = +85°C
VDD = 5.5V
-80
-100
-120
T
Common Mode Input Voltage (V)
FIGURE 2-14:
Input Bias and Offset
Currents vs. Common Mode Input Voltage with
T = +85°C.
A
© 2009 Microchip Technology Inc.
DS22194A-page 9
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
2.2
Other DC Voltages and Currents
1000
9
8
7
6
5
4
3
2
1
0
VDD = 5.5V
100
10
1
VDD = 2.5V
VOL – VSS
+125°C
+85°C
+25°C
-40°C
VDD – VOH
0.1
1
10
100
Power Supply Voltage (V)
Output Current Magnitude (mA)
FIGURE 2-16:
Output Voltage Headroom
FIGURE 2-19:
Supply Current vs. Power
vs. Output Current.
Supply Voltage.
45
7
6
5
RL = 1 kΩ
40
35
VOL – VSS
VDD = 5.5V
VDD = 5.5V
30
VDD = 2.5V
4
3
2
1
0
25
20
15
10
5
VDD = 2.5V
VDD – VOH
0
-50
-25
0
25
50
75
100
125
Common Mode Input Voltage (V)
Ambient Temperature (°C)
FIGURE 2-17:
Output Voltage Headroom
FIGURE 2-20:
Supply Current vs. Common
vs. Ambient Temperature.
Mode Input Voltage.
100
80
60
+125°C
+85°C
+25°C
-40°C
40
20
0
-20
-40
-60
-80
-100
Power Supply Voltage (V)
FIGURE 2-18:
Output Short Circuit Current
vs. Power Supply Voltage.
DS22194A-page 10
© 2009 Microchip Technology Inc.
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
2.3
Frequency Response
100
90
80
70
60
50
40
30
20
10
80
75
70
65
60
55
50
45
40
80
75
70
65
60
55
50
45
40
PM
VDD = 5.5V
VDD = 2.5V
CMRR
PSRR+
PSRR-
GBWP
100
11.Ek+3
10k
100k
1M
10M
1.E+7
1.E+2
1.E+4
1.E+5
1.E+6
Common Mode Input Voltage (V)
Frequency (Hz)
FIGURE 2-21:
CMRR and PSRR vs.
FIGURE 2-24:
Gain Bandwidth Product
Frequency.
and Phase Margin vs. Common Mode Input
Voltage.
140
120
100
80
0
80
75
70
65
60
55
50
45
40
80
75
70
65
60
55
50
45
40
-30
-60
-90
PM
∠AOL
VDD = 5.5V
DD = 2.5V
V
60
-120
-150
-180
-210
-240
40
| AOL
|
GBWP
20
0
-20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Output Voltage (V)
1
0
10 100 1k 10k100k 11.ME+ 10M 100M11.EG+
1.E+ 1.E+
1.E+ 1.E+ 1.E+ 1.E+ 1.E+ 1.E+
1
2
3
4
6
7
8
9
Frequenc5y (Hz)
FIGURE 2-22:
Open-Loop Gain vs.
FIGURE 2-25:
Gain Bandwidth Product
Frequency.
and Phase Margin vs. Output Voltage.
100
80
75
70
65
80
75
70
65
60
55
50
45
40
10
PM
G = 101 V/V
G = 11 V/V
G = 1 V/V
VDD = 5.5V
VDD = 2.5V
60
55
50
45
40
1
GBWP
0.1
-50 -25
0
25
50
75 100 125
10k
100k
1.0E+05
1M
10M
1.0E+07
100M
1.0E+04
1.0E+06
1.0E+08
Ambient Temperature (°C)
Frequency (Hz)
FIGURE 2-23:
Gain Bandwidth Product
FIGURE 2-26:
Closed-Loop Output
and Phase Margin vs. Ambient Temperature.
Impedance vs. Frequency.
© 2009 Microchip Technology Inc.
DS22194A-page 11
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
10
9
150
140
130
120
110
100
90
RS = 0Ω
R
R
S = 100Ω
S = 1 kΩ
8
VCM = VDD/2
G = +1 V/V
7
GN = 1 V/V
GN = 2 V/V
6
GN ≥ 4 V/V
5
4
3
2
1
0
80
70
RS = 10 kΩ
RS = 100 kΩ
60
50
10p
1.0E-11
100p
1.0E-10
Normalized Capacitive Load; CL/GN (F)
1n
1.0E-09
1k
10k
1.E+04
100k
1.E+05
1M
1.E+06
10M
1.E+07
1.E+03
Frequency (Hz)
FIGURE 2-27:
Gain Peaking vs.
FIGURE 2-28:
Channel-to-Channel
Normalized Capacitive Load.
Separation vs. Frequency.
DS22194A-page 12
© 2009 Microchip Technology Inc.
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
2.4
Noise and Distortion
1.E+4
10µ
20
15
10
5
Representative Part
1.E+3
1µ
0
1.E+2
100n
-5
-10
-15
-20
Analog NPBW = 0.1 Hz
Sample Rate = 2 SPS
VOS = -953 µV
11.E0+n1
1.E1+n0
0
5 10 15 20 25 30 35 40 45 50 55 60 65
0.1
1
10 100 1.1E+k3 10k 100k 11.EM+6 10M
1.E-1 1.E+0 1.E+1 1.E+2 1.E+4 1.E+5 1.E+7
Frequency (Hz)
Time (min)
FIGURE 2-29:
Input Noise Voltage Density
FIGURE 2-32:
Input Noise vs. Time with
vs. Frequency.
0.1 Hz Filter.
200
180
1
VDD = 5.0V
OUT = 2 VP-P
V
VDD = 2.5V
160
140
120
100
80
0.1
0.01
G = 1 V/V
G = 11 V/V
BW = 22 Hz to > 500 kHz
BW = 22 Hz to 80 kHz
VDD = 5.5V
60
0.001
0.0001
40
20
f = 100 Hz
0
100
1k
1.E+3
10k
1.E+4
100k
1.E+5
1.E+2
Frequency (Hz)
Common Mode Input Voltage (V)
FIGURE 2-30:
Input Noise Voltage Density
FIGURE 2-33:
THD+N vs. Frequency.
vs. Input Common Mode Voltage with f = 100 Hz.
20
18
16
0.2
0.1
0.0
0.2
Positive Video
0.1
Negative Video
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-0.1
-0.2
-0.3
14
VDD = 2.5V
12
10
8
VDD = 5.5V
Δ(|G|)
Δ(∠G)
Representative Part
-0.4
V
V
V
DD = 2.5V
SS = -2.5V
L = 0V
L = 150Ω
Normalized to DC VIN = 0V
NTSC
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
6
R
4
2
f = 1 MHz
0
-0.8 -0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8
DC Input Voltage (V)
Common Mode Input Voltage (V)
FIGURE 2-31:
Input Noise Voltage Density
FIGURE 2-34:
Change in Gain Magnitude
vs. Input Common Mode Voltage with f = 1 MHz.
and Phase vs. DC Input Voltage.
© 2009 Microchip Technology Inc.
DS22194A-page 13
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
2.5
Time Response
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDD = 5.5V
G = 1
VDD = 5.5V
G = -1
RF = 402Ω
VIN
VIN
VOUT
VOUT
0
20 40 60 80 100 120 140 160 180 200
Time (ns)
0
100
200
300
Time (ns)
400
500
600
FIGURE 2-35:
Non-inverting Small Signal
FIGURE 2-38:
Inverting Large Signal Step
Step Response.
Response.
5.5
5.0
4.5
4.0
3.5
3.0
7
6
VDD = 5.5V
G = 2
VDD = 5.5V
G = 1
VOUT
5
VIN
4
3
2.5
VIN
VOUT
2
2.0
1.5
1.0
0.5
0.0
1
0
-1
0
100 200 300 400 500 600 700 800
Time (ns)
0
1
2
3
4
5
6
7
8
9
10
Time (µs)
FIGURE 2-36:
Non-inverting Large Signal
FIGURE 2-39:
The MCP661/2/3/5 family
Step Response.
shows no input phase reversal with overdrive.
50
Falling Edge
VIN
45
VDD = 5.5V
40
35
30
VDD = 5.5V
G = -1
RF = 402Ω
25
VDD = 2.5V
20
15
10
5
Rising Edge
VOUT
0
0
50 100 150 200 250 300 350 400 450 500
Time (ns)
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
FIGURE 2-37:
Inverting Small Signal Step
FIGURE 2-40:
Slew Rate vs. Ambient
Response.
Temperature.
DS22194A-page 14
© 2009 Microchip Technology Inc.
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
10
VDD = 5.5V
VDD = 2.5V
1
0.1
100k
1M
1.E+06
10M
1.E+07
100M
1.E+08
1.E+05
Frequency (Hz)
FIGURE 2-41:
Maximum Output Voltage
Swing vs. Frequency.
© 2009 Microchip Technology Inc.
DS22194A-page 15
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
2.6
Chip Select Response
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
CS = VDD
VDD = 5.5V
VDD = 2.5V
-50
-25
0
25
50
75
100
125
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power Supply Voltage (V)
Ambient Temperature (°C)
FIGURE 2-42:
CS Current vs. Power
FIGURE 2-45:
CS Hysteresis vs. Ambient
Supply Voltage.
Temperature.
3.0
5
4
3
2
1
0
VDD = 2.5V
G = 1
VL = 0V
2.5
CS
2.0
1.5
1.0
0.5
VDD = 2.5V
VOUT
On
VDD = 5.5V
0.0
Off
Off
-0.5
-50
-25
0
25
50
75
100
125
0
2
4
6
8
10 12 14 16 18 20
Time (µs)
Ambient Temperature (°C)
FIGURE 2-43:
CS and Output Voltages vs.
FIGURE 2-46:
CS Turn On Time vs.
Time with V = 2.5V.
Ambient Temperature.
DD
6
8
VDD = 5.5V
Representative Part
CS
G = 1
VL = 0V
7
6
5
4
3
2
1
0
5
4
3
VOUT
2
On
1
0
Off
Off
-1
-50
-25
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
Time (µs)
Ambient Temperature (°C)
FIGURE 2-44:
CS and Output Voltages vs.
FIGURE 2-47:
CS’s Pull-down Resistor
Time with V = 5.5V.
(R ) vs. Ambient Temperature.
DD
PD
DS22194A-page 16
© 2009 Microchip Technology Inc.
MCP661/2/3/5
Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to 5.5V, VSS = GND, VCM = VDD/3, VOUT = VDD/2,
VL = VDD/2, RL = 1 kΩ to VL, CL = 20 pF and CS = VSS
.
0.0
1.E-016µ
CS = VDD = 5.5V
CS = VDD
-0.2
-0.4
-0.6
-0.8
-1.0
100n
1.E-07
+125°C
+85°C
10n
1.E-08
-1.2
-1.4
-1.6
-1.8
-2.0
+125°C
+85°C
+25°C
-40°C
1n
1.E-09
100p
1.E-10
+25°C
10p
1.E-11
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Output Voltage (V)
Power Supply Voltage (V)
FIGURE 2-48:
Shutdown vs. Power Supply Voltage.
Quiescent Current in
FIGURE 2-49:
Output Voltage.
Output Leakage Current vs.
© 2009 Microchip Technology Inc.
DS22194A-page 17
MCP661/2/3/5
NOTES:
DS22194A-page 18
© 2009 Microchip Technology Inc.
MCP661/2/3/5
3.0
PIN DESCRIPTIONS
Descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP661
PIN FUNCTION TABLE
MCP662
SOIC DFN
MCP663
MCP665
MSOP DFN
Symbol
Description
SOIC
SOIC
6
2
3
4
1
2
3
4
1
2
3
4
6
2
3
4
1
2
3
4
1
2
3
4
VOUT, VOUTA Output (op amp A)
VIN–, VINA
VIN+, VINA
VSS
–
Inverting Input (op amp A)
Non-inverting Input (op amp A)
Negative Power Supply
+
—
—
—
8
5
5
CS, CSA
CSB
Chip Select Digital Input (op amp A)
—
—
—
5
—
5
—
—
—
—
7
6
7
6
7
Chip Select Digital Input (op amp B)
Non-inverting Input (op amp B)
Inverting Input (op amp B)
Output (op amp B)
VINB
+
–
—
6
6
8
8
VINB
—
7
7
9
9
VOUTB
VDD
NC
7
8
8
10
—
—
10
—
11
Positive Power Supply
1,5,8
—
—
—
—
9
1,5
—
No Internal Connection
EP
Exposed Thermal Pad (EP);
must be connected to VSS
3.1
Analog Outputs
3.4
Chip Select Digital Input (CS)
The analog output pins (VOUT) are low-impedance
voltage sources.
This input (CS) is a CMOS, Schmitt-triggered input that
places the part into a low power mode of operation.
3.2
Analog Inputs
3.5
Exposed Thermal Pad (EP)
The non-inverting and inverting inputs (VIN+, VIN–, …)
are high-impedance CMOS inputs with low bias
currents.
There is an internal connection between the Exposed
Thermal Pad (EP) and the VSS pin; they must be
connected to the same potential on the Printed Circuit
Board (PCB).
3.3
Power Supply Pins
This pad can be connected to a PCB ground plane to
provide a larger heat sink. This improves the package
thermal resistance (θJA).
The positive power supply (VDD) is 2.5V to 5.5V higher
than the negative power supply (VSS). For normal
operation, the other pins are between VSS and VDD
.
Typically, these parts are used in a single (positive)
supply configuration. In this case, VSS is connected to
ground and VDD is connected to the supply. VDD will
need bypass capacitors.
© 2009 Microchip Technology Inc.
DS22194A-page 19
MCP661/2/3/5
NOTES:
DS22194A-page 20
© 2009 Microchip Technology Inc.
MCP661/2/3/5
4.0
APPLICATIONS
VDD
The MCP661/2/3/5 family op amps is manufactured
using Microchip’s state of the art CMOS process. It is
designed for low cost, low power and high speed
applications. Its low supply voltage, low quiescent
current and wide bandwidth make the MCP661/2/3/5
ideal for battery-powered applications.
D1
R1
D2
MCP66X
V1
V2
VOUT
R2
4.1
Input
VSS – (minimum expected V1)
R1 >
R2 >
4.1.1
PHASE REVERSAL
2 mA
VSS – (minimum expected V2)
2 mA
The input devices are designed to not exhibit phase
inversion when the input pins exceed the supply
voltages. Figure 2-39 shows an input voltage
exceeding both supplies with no phase inversion.
FIGURE 4-2:
Protecting the Analog
Inputs.
4.1.2
INPUT VOLTAGE AND CURRENT
LIMITS
It is also possible to connect the diodes to the left of the
resistor R1 and R2. In this case, the currents through
the diodes D1 and D2 need to be limited by some other
mechanism. The resistors then serve as in-rush
current limiters; the DC current into the input pins
(VIN+ and VIN–) should be very small.
The ESD protection on the inputs can be depicted as
shown in Figure 4-1. This structure was chosen to
protect the input transistors, and to minimize input bias
current (IB). The input ESD diodes clamp the inputs
when they try to go more than one diode drop below
VSS. They also clamp any voltages that go too far
above VDD; their breakdown voltage is high enough to
allow normal operation, and low enough to bypass
quick ESD events within the specified limits.
A significant amount of current can flow out of the
inputs (through the ESD diodes) when the common
mode voltage (VCM) is below ground (VSS); see
Figure 2-13. Applications that are high impedance may
need to limit the usable voltage range.
4.1.3
NORMAL OPERATION
Bond
VDD
The input stage of the MCP661/2/3/5 op amps uses a
differential PMOS input stage. It operates at
low common mode input voltages (VCM), with VCM
between VSS – 0.3V and VDD – 1.3V. To ensure proper
operation, the input offset voltage (VOS) is measured
Pad
Bond
Pad
Bond
Pad
Input
Stage
VIN+
VIN–
at both
VCM = VSS – 0.3V
and
VDD – 1.3V.
See Figure 2-5 and Figure 2-6 for temperature effects.
When operating at very low non-inverting gains, the
output voltage is limited at the top by the VCM range
(< VDD – 1.3V); see Figure 4-3.
Bond
Pad
VSS
FIGURE 4-1:
Structures.
Simplified Analog Input ESD
VDD
MCP66X
In order to prevent damage and/or improper operation
of these amplifiers, the circuit must limit the currents
(and voltages) at the input pins (see Section 1.1
“Absolute Maximum Ratings †”). Figure 4-2 shows
the recommended approach to protecting these inputs.
The internal ESD diodes prevent the input pins
(VIN+ and VIN–) from going too far below ground, and
the resistors R1 and R2 limit the possible current drawn
out of the input pins. Diodes D1 and D2 prevent the
input pins (VIN+ and VIN–) from going too far above
VDD, and dump any currents onto VDD. When
implemented as shown, resistors R1 and R2 also limit
the current through D1 and D2.
VIN
VOUT
VSS < VIN, VOUT ≤ VDD – 1.3V
FIGURE 4-3:
Unity Gain Voltage
Limitations for Linear Operation.
© 2009 Microchip Technology Inc.
DS22194A-page 21
MCP661/2/3/5
4.2
Rail-to-Rail Output
VDD
4.2.1
MAXIMUM OUTPUT VOLTAGE
VOUT
IDD
The Maximum Output Voltage (see Figure 2-16 and
Figure 2-17) describes the output range for a given
load. For instance, the output voltage swings to within
50 mV of the negative rail with a 1 kΩ load tied to
VDD/2.
IOUT
RSER
VL
MCP66X
IL
RL
ISS
4.2.2
OUTPUT CURRENT
VLG
VSS
Figure 4-4 shows the possible combinations of output
voltage (VOUT) and output current (IOUT), when
VDD = 5.5V. IOUT is positive when it flows out of the op
amp into the external circuit.
FIGURE 4-5:
Calculations.
Diagram for Power
The instantaneous op amp power (POA(t)), RSER power
(PRSER(t)) and load power (PL(t)) are:
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.5
VOH Limited
(VDD = 5.5V)
EQUATION 4-2:
RL = 1 kΩ
RL = 100Ω
POA(t) = IDD (VDD – VOUT) + ISS (VSS – VOUT
)
RL = 10Ω
2
P
RSER(t) = IOUT RSER
2
PL(t) = IL RL
VOL Limited
The maximum op amp power, for resistive loads,
occurs when VOUT is halfway between VDD and VLG or
halfway between VSS and VLG
:
IOUT (mA)
FIGURE 4-4:
Output Current.
EQUATION 4-3:
2
4.2.3 POWER DISSIPATION
max (V – V , V – V )
DD
LG
LG
SS
P
≤
OAmax
4(R
+ R )
L
Since the output short circuit current (ISC) is specified
at ±90 mA (typical), these op amps are capable of both
delivering and dissipating significant power.
SER
The maximum ambient to junction temperature rise
(ΔTJA) and junction temperature (TJ) can be calculated
using POAmax, ambient temperature (TA), the package
thermal resistance (θJA) found in Table 1-4, and the
number of op amps in the package (assuming equal
power dissipations):
Figure 4-5 show the quantities used in the following
power calculations for a single op amp. RSER is 0 Ω in
most applications; it can be used to limit IOUT. VOUT is
the op amp’s output voltage, VL is the voltage at the
load, and VLG is the load’s ground point. VSS is usually
ground (0V). The input currents are assumed to be
negligible. The currents shown are approximately:
EQUATION 4-4:
ΔT = P (t) θ ≤ n P
θ
JA
OA
JA
OAmax JA
EQUATION 4-1:
T = T + ΔT
J
A
JA
VOUT – VLG
IOUT = IL =
Where:
n
R
SER + RL
=
number of op amps in package (1, 2)
IDD ≈ IQ + max(0, IOUT
)
ISS ≈ –IQ + min(0, IOUT
)
Where:
IQ
=
quiescent supply current
DS22194A-page 22
© 2009 Microchip Technology Inc.
MCP661/2/3/5
The power de-rating across temperature for an op amp
in a particular package can be easily calculated
(assuming equal power dissipations):
When driving large capacitive loads with these op
amps (e.g., > 20 pF when G = +1), a small series
resistor at the output (RISO in Figure 4-6) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. The
bandwidth will be generally lower than the bandwidth
with no capacitive load.
EQUATION 4-5:
T
– T
A
Jmax
n θ
P
≤
OAmax
JA
Where:
TJmax
RISO
CL
RG
RF
VOUT
=
absolute max. junction temperature
Several techniques are available to reduce ΔTJA for a
MCP66X
given POAmax
:
RN
• Lower θJA
FIGURE 4-6:
stabilizes large capacitive loads.
Output Resistor, R
ISO
- Use another package
- PCB layout (ground plane, etc.)
- Heat sinks and air flow
• Reduce POAmax
Figure 4-7 gives recommended RISO values for
different capacitive loads and gains. The x-axis is the
normalized load capacitance (CL/GN), where GN is the
circuit’s noise gain. For non-inverting gains, GN and the
Signal Gain are equal. For inverting gains, GN is
1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).
- Increase RL
- Limit IOUT (using RSER
- Decrease VDD
)
4.3
Distortion
100
Differential Gain (DG) and Differential Phase (DP)
refer to the non-linear distortion produced by a NTSC
(or PAL) video component. Table 1-2 and Figure 2-34
show the typical performance of the MCP661,
configured as a gain of +2 amplifier (see Figure 4-10),
when driving one back-matched video load (150Ω, for
75Ω cable). Our tests use a sine wave at NTSC’s color
sub-carrier frequency of 3.58 MHz, with a 0.286VP-P
magnitude. The DC input voltage is changed over a
+0.7V range (positive video) or a -0.7V range (negative
video).
10
GN = +1
GN ≥ +2
1
10p
100p
1.E-10
1n
1.E-09
10n
1.E-11
1.E-08
Normalized Capacitance; CL/GN (F)
DG is the peak-to-peak change in the AC gain
magnitude (color hue), as the DC level (luminance) is
changed, in units of %. DP is the peak-to-peak change
in the AC gain phase (color saturation), as the DC level
(luminance) is changed, in units of °.
FIGURE 4-7:
for Capacitive Loads.
Recommended R
Values
ISO
After selecting RISO for your circuit, double check the
resulting frequency response peaking and step
response overshoot. Modify RISO’s value until the
response is reasonable. Bench evaluation and
simulations with the MCP661/2/3/5 SPICE macro
model are helpful.
4.4
Improving Stability
4.4.1
CAPACITIVE LOADS
Driving large capacitive loads can cause stability
problems for voltage feedback op amps. As the load
capacitance increases, the feedback loop’s phase
margin decreases and the closed-loop bandwidth is
reduced. This produces gain peaking in the frequency
response, with overshoot and ringing in the step
response. A unity gain buffer (G = +1) is the most
sensitive to capacitive loads, though all gains show the
same general behavior.
© 2009 Microchip Technology Inc.
DS22194A-page 23
MCP661/2/3/5
Figure 2-37 and Figure 2-38 show the small signal and
large signal step responses at G = -1 V/V. Since the
noise gain is 2 V/V and CG ≈ 10 pF, the resistors were
chosen to be RF = RG = 401Ω and RN = 200Ω.
4.4.2
GAIN PEAKING
Figure 4-8 shows an op amp circuit that represents
non-inverting amplifiers (VM is a DC voltage and VP is
the input) or inverting amplifiers (VP is a DC voltage
and VM is the input). The capacitances CN and CG rep-
resent the total capacitance at the input pins; they
include the op amp’s common mode input capacitance
(CCM), board parasitic capacitance and any capacitor
placed in parallel.
It is also possible to add a capacitor (CF) in parallel with
RF to compensate for the de-stabilizing effect of CG.
This makes it possible to use larger values of RF. The
conditions for stability are summarized in Equation 4-6.
EQUATION 4-6:
Given:
CN
RN
GN1 = 1 + RF ⁄ RG
MCP66X
GN2 = 1 + CG ⁄ CF
fF = 1 ⁄ (2πRFCF)
VP
VOUT
fZ = fF(GN1 ⁄ GN2
We need:
)
VM
RG
RF
CG
fF ≤ fGBWP ⁄ (2GN2), GN1 < GN2
fF ≤ fGBWP ⁄ (4GN1), GN1 > GN2
FIGURE 4-8:
Amplifier with Parasitic
Capacitance.
4.5
MCP663 and MCP665 Chip Select
CG acts in parallel with RG (except for a gain of +1 V/V),
which causes an increase in gain at high frequencies.
CG also reduces the phase margin of the feedback
loop, which becomes less stable. This effect can be
reduced by either reducing CG or RF.
The MCP663 is a single amplifier with Chip Select
(CS). When CS is pulled high, the supply current drops
to 1 µA (typical) and flows through the CS pin to VSS
When this happens, the amplifier output is put into a
high-impedance state. By pulling CS low, the amplifier
is enabled. The CS pin has an internal 5 MΩ (typical)
pulldown resistor connected to VSS, so it will go low if
the CS pin is left floating. Figure 1-1, Figure 2-43 and
Figure 2-44 show the output voltage and supply current
response to a CS pulse.
.
CN and RN form a low-pass filter that affects the signal
at VP. This filter has a single real pole at 1/(2πRNCN).
The largest value of RF that should be used depends
on noise gain (see GN in Section 4.4.1 “Capacitive
Loads”), CG and the open-loop gain’s phase shift.
Figure 4-9 shows the maximum recommended RF for
several CG values. Some applications may modify
these values to reduce either output loading or gain
peaking (step response overshoot).
The MCP665 is a dual amplifier with two CS pins; CSA
controls op amp A and CSB controls op amp B. These
op amps are controlled independently, with an enabled
quiescent current (IQ) of 6 mA/amplifier (typical) and a
disabled IQ of 1 µA/amplifier (typical). The IQ seen at
the supply pins is the sum of the two op amps’ IQ; the
typical value for the MCP665’s IQ will be 2 µA, 6 mA or
12 mA when there are 0, 1 or 2 amplifiers enabled,
respectively.
1.E+05
100k
GN > +1 V/V
CG = 10 pF
CG = 32 pF
CG = 100 pF
1.E+1004k
C
G = 320 pF
G = 1 nF
C
4.6
Power Supply
1k
1.E+03
With this family of operational amplifiers, the power
supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good high frequency performance. Surface mount,
multilayer ceramic capacitors, or their equivalent,
should be used.
100
1.E+02
1
10
100
Noise Gain; GN (V/V)
FIGURE 4-9:
vs. Gain.
Maximum recommended R
F
These op amps require a bulk capacitor (i.e., 2.2 µF or
larger) within 50 mm to provide large, slow currents.
Tantalum capacitors, or their equivalent, may be a good
choice. This bulk capacitor can be shared with other
nearby analog parts as long as crosstalk through the
supplies does not prove to be a problem.
Figure 2-35 and Figure 2-36 show the small signal and
large signal step responses at G = +1 V/V. The unity
gain buffer usually has RF = 0Ω and RG open.
DS22194A-page 24
© 2009 Microchip Technology Inc.
MCP661/2/3/5
The output headroom limits would be VOL = -2.3V and
VOH = +2.3V (see Figure 2-16), leaving some design
4.7
High Speed PCB Layout
These op amps are fast enough that a little extra care
in the PCB (Printed Circuit Board) layout can make a
significant difference in performance. Good PC board
layout techniques will help you achieve the
performance shown in the specifications and Typical
Performance Curves; it will also help you minimize
EMC (Electro-Magnetic Compatibility) issues.
room for the ±2V signal. The open-loop gain (AOL
)
typically does not decrease significantly with a 100Ω
load (see Figure 2-11). The maximum power dissipated
is about 48 mW (see Section 4.2.3 “Power
Dissipation”), so the temperature rise (for the
MCP661 in the SOIC-8 package) is under 8°C.
4.8.2
OPTICAL DETECTOR AMPLIFIER
Use a solid ground plane. Connect the bypass local
capacitor(s) to this plane with minimal length traces.
This cuts down inductive and capacitive crosstalk.
Figure 4-11 shows a transimpedance amplifier, using
the MCP661 op amp, in a photo detector circuit. The
photo detector is
RF provides enough gain to produce 10 mV at VOUT
CF stabilizes the gain and limits the transimpedance
bandwidth to about 1.1 MHz. RF’s parasitic
capacitance (e.g., 0.2 pF for a 0805 SMD) acts in
parallel with CF.
a capacitive current source.
Separate digital from analog, low speed from high
speed, and low power from high power. This will reduce
interference.
.
Keep sensitive traces short and straight. Separate
them from interfering components and traces. This is
especially important for high frequency (low rise time)
signals.
CF
1.5 pF
Sometimes, it helps to place guard traces next to victim
traces. They should be on both sides of the victim
trace, and as close as possible. Connect guard traces
to ground plane at both ends, and in the middle for long
traces.
Photo
Detector
RF
100 kΩ
VOUT
Use coax cables, or low inductance wiring, to route
signal and power to and from the PCB. Mutual and self
inductance of power wires is often a cause of crosstalk
and unusual behavior.
ID
100 nA
CD
30pF
MCP66X
VDD/2
4.8
Typical Applications
FIGURE 4-11:
for an Optical Detector.
Transimpedance Amplifier
4.8.1
50Ω LINE DRIVER
Figure 4-10 shows the MCP661 driving a 50Ω line. The
large output current (e.g., see Figure 2-18) makes it
possible to drive a back-matched line (RM2, the 50Ω
line and the 50Ω load at the far end) to more than ±2V
(the load at the far end sees ±1V). It is worth
mentioning that the 50Ω line and the 50Ω load at the far
end together can be modeled as a simple 50Ω resistor
to ground.
4.8.3
H-BRIDGE DRIVER
Figure 4-12 shows the MCP662 dual op amp used as
a H-bridge driver. The load could be a speaker or a DC
motor.
½ MCP662
VIN
50Ω
Line
+2.5V
-2.5V
MCP66X
VOT
RF
RF
RF
RM1
RM2
49.9Ω
RL
49.9Ω
RGT
RGB
50Ω
RG
RF
VOB
301Ω
301Ω
VDD/2
½ MCP662
H-Bridge Driver.
FIGURE 4-10:
50Ω Line Driver.
FIGURE 4-12:
© 2009 Microchip Technology Inc.
DS22194A-page 25
MCP661/2/3/5
This circuit automatically makes the noise gains (GN)
equal, when the gains are set properly, so that the fre-
quency responses match well (in magnitude and in
phase). Equation 4-7 shows how to calculate RGT and
RGB so that both op amps have the same DC gains;
GDM needs to be selected first.
EQUATION 4-7:
VOT – VOB
--------------------------------
≥ 1 V/V
GDM
≡
V
IN – VDD ⁄ 2
RF
RGT = --------------------------------
(GDM ⁄ 2) – 1
RF
RGB = ------------------
GDM ⁄ 2
Equation 4-8 gives the resulting common mode and
differential mode output voltages.
EQUATION 4-8:
VOT + VOB
-------------------------- = ----------
VDD
2
2
VDD
⎛
⎞
⎠
VOT – VOB = GDM VIN – ----------
⎝
2
DS22194A-page 26
© 2009 Microchip Technology Inc.
MCP661/2/3/5
5.5
Analog Demonstration and
Evaluation Boards
5.0
DESIGN AIDS
Microchip provides the basic design aids needed for
the MCP661/2/3/5 family of op amps.
Microchip offers
a
broad spectrum of Analog
Demonstration and Evaluation Boards that are
designed to help customers achieve faster time
to market. For a complete listing of these boards
and their corresponding user’s guides and technical
information, visit the Microchip web site at
www.microchip.com/analog tools.
5.1
SPICE Macro Model
The latest SPICE macro model for the MCP661/2/3/5
op amps is available on the Microchip web site at
www.microchip.com. This model is intended to be an
initial design tool that works well in the op amp’s linear
region of operation over the temperature range.
See the model file for information on its capabilities.
Some boards that are especially useful are:
• MCP6XXX Amplifier Evaluation Board 1
• MCP6XXX Amplifier Evaluation Board 2
• MCP6XXX Amplifier Evaluation Board 3
• MCP6XXX Amplifier Evaluation Board 4
• Active Filter Demo Board Kit
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board,
P/N SOIC8EV
5.2
FilterLab® Software
Microchip’s FilterLab® software is an innovative
software tool that simplifies analog active filter
(using op amps) design. Available at no cost from the
Microchip web site at www.microchip.com/filterlab, the
Filter-Lab design tool provides full schematic diagrams
of the filter circuit with component values. It also
outputs the filter circuit in SPICE format, which can be
used with the macro model to simulate actual filter
performance.
5.6
Application Notes
The following Microchip Application Notes are
available on the Microchip web site at www.microchip.
com/appnotes and are recommended as supplemental
reference resources.
• ADN003: “Select the Right Operational Amplifier
for your Filtering Circuits”, DS21821
• AN722: “Operational Amplifier Topologies and DC
Specifications”, DS00722
5.3
Mindi™ Circuit Designer &
Simulator
• AN723: “Operational Amplifier AC Specifications
and Applications”, DS00723
• AN884: “Driving Capacitive Loads With Op
Amps”, DS00884
Microchip’s Mindi™ Circuit Designer & Simulator aids
in the design of various circuits useful for active filter,
amplifier and power management applications. It is a
free online circuit designer & simulator available from
the Microchip web site at www.microchip.com/mindi.
This interactive circuit designer & simulator enables
designers to quickly generate circuit diagrams,
and simulate circuits. Circuits developed using the
Mindi Circuit Designer & Simulator can be downloaded
to a personal computer or workstation.
• AN990: “Analog Sensor Conditioning Circuits –
An Overview”, DS00990
• AN1228: “Op Amp Precision Design: Random
Noise”, DS01228
Some of these application notes, and others, are listed
in the design guide:
• “Signal Chain Design Guide”, DS21825
5.4
Microchip Advanced Part Selector
(MAPS)
MAPS is a software tool that helps efficiently identify
Microchip devices that fit particular design
a
requirement. Available at no cost from the Microchip
website at www.microchip.com/maps, the MAPS is an
overall selection tool for Microchip’s product portfolio
that includes Analog, Memory, MCUs and DSCs. Using
this tool, a customer can define a filter to sort features
for a parametric search of devices and export
side-by-side technical comparison reports. Helpful links
are also provided for Data sheets, Purchase and
Sampling of Microchip parts.
© 2009 Microchip Technology Inc.
DS22194A-page 27
MCP661/2/3/5
NOTES:
DS22194A-page 28
© 2009 Microchip Technology Inc.
MCP661/2/3/5
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
8-Lead DFN (3×3) (MCP662)
Example
Device
Code
XXXX
YYWW
NNN
DABQ
0924
256
MCP662
DABQ
Note:
Applies to 8-Lead 3x3 DFN
8-Lead SOIC (150 mil) (MCP661, MCP662, MCP663)
Example:
XXXXXXXX
MCP661E
e
3
XXXXYYWW
SN 0924
NNN
256
10-Lead DFN (3×3) (MCP665)
Example
XXXX
BAFD
0924
256
Device
Code
YYWW
NNN
MCP665
BAFD
Note:
Applies to 10-Lead 3x3 DFN
10-Lead MSOP (MCP665)
Example:
XXXXXX
YWWNNN
665EUN
924256
Legend: XX...X Customer-specific information
Y
Year code (last digit of calendar year)
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
e
3
*
)
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2009 Microchip Technology Inc.
DS22194A-page 29
MCP661/2/3/5
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DS22194A-page 30
© 2009 Microchip Technology Inc.
MCP661/2/3/5
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DS22194A-page 31
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ꢖꢔ8
6!&(ꢉꢊꢅꢌ$ꢅꢂꢃꢄ
ꢂꢃ%ꢍꢎ
6
ꢉ
9
ꢀꢁꢏꢞꢅ/ꢕ0
7ꢆꢉꢊꢇꢈꢈꢅ;ꢉꢃꢐꢎ%
ꢔ
M
ꢀꢁꢏ.
ꢚꢁꢀꢚ
M
M
M
ꢀꢁꢞ.
M
ꢚꢁꢏ.
ꢖꢌꢈ"ꢉ"ꢅꢂꢇꢍ*ꢇꢐꢉꢅꢗꢎꢃꢍ*ꢄꢉ
ꢕ%ꢇꢄ"ꢌ$$ꢅꢅ
ꢔꢏ
ꢔꢀ
,
ꢝ
7ꢆꢉꢊꢇꢈꢈꢅ<ꢃ"%ꢎ
:ꢁꢚꢚꢅ/ꢕ0
ꢖꢌꢈ"ꢉ"ꢅꢂꢇꢍ*ꢇꢐꢉꢅ<ꢃ"%ꢎ
7ꢆꢉꢊꢇꢈꢈꢅ5ꢉꢄꢐ%ꢎ
0ꢎꢇ&$ꢉꢊꢅ@ꢌꢑ%ꢃꢌꢄꢇꢈA
2ꢌꢌ%ꢅ5ꢉꢄꢐ%ꢎ
,ꢀ
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ꢎ
+ꢁꢛꢚꢅ/ꢕ0
ꢒꢁꢛꢚꢅ/ꢕ0
ꢚꢁꢏ.
ꢚꢁꢒꢚ
M
M
ꢚꢁ.ꢚ
ꢀꢁꢏꢞ
5
2ꢌꢌ%ꢑꢊꢃꢄ%
2ꢌꢌ%ꢅꢔꢄꢐꢈꢉ
5ꢉꢇ"ꢅꢗꢎꢃꢍ*ꢄꢉ
5ꢉꢇ"ꢅ<ꢃ"%ꢎ
ꢖꢌꢈ"ꢅꢓꢊꢇ$%ꢅꢔꢄꢐꢈꢉꢅꢗꢌꢑ
ꢖꢌꢈ"ꢅꢓꢊꢇ$%ꢅꢔꢄꢐꢈꢉꢅ/ꢌ%%ꢌ&
5ꢀ
ꢀ
ꢀꢁꢚꢒꢅꢘ,2
ꢚꢟ
ꢚꢁꢀꢞ
ꢚꢁ+ꢀ
.ꢟ
M
M
M
M
M
9ꢟ
ꢍ
(
ꢁ
ꢚꢁꢏ.
ꢚꢁ.ꢀ
ꢀ.ꢟ
ꢂ
.ꢟ
ꢀ.ꢟ
ꢑꢒꢊꢃꢉ%
ꢀꢁ ꢂꢃꢄꢅꢀꢅꢆꢃ !ꢇꢈꢅꢃꢄ"ꢉ#ꢅ$ꢉꢇ%!ꢊꢉꢅ&ꢇꢋꢅꢆꢇꢊꢋ'ꢅ(!%ꢅ&! %ꢅ(ꢉꢅꢈꢌꢍꢇ%ꢉ"ꢅ)ꢃ%ꢎꢃꢄꢅ%ꢎꢉꢅꢎꢇ%ꢍꢎꢉ"ꢅꢇꢊꢉꢇꢁ
ꢏꢁ ꢝꢅꢕꢃꢐꢄꢃ$ꢃꢍꢇꢄ%ꢅ0ꢎꢇꢊꢇꢍ%ꢉꢊꢃ %ꢃꢍꢁ
+ꢁ ꢓꢃ&ꢉꢄ ꢃꢌꢄ ꢅꢓꢅꢇꢄ"ꢅ,ꢀꢅ"ꢌꢅꢄꢌ%ꢅꢃꢄꢍꢈ!"ꢉꢅ&ꢌꢈ"ꢅ$ꢈꢇ ꢎꢅꢌꢊꢅꢑꢊꢌ%ꢊ! ꢃꢌꢄ ꢁꢅꢖꢌꢈ"ꢅ$ꢈꢇ ꢎꢅꢌꢊꢅꢑꢊꢌ%ꢊ! ꢃꢌꢄ ꢅ ꢎꢇꢈꢈꢅꢄꢌ%ꢅꢉ#ꢍꢉꢉ"ꢅꢚꢁꢀ.ꢅ&&ꢅꢑꢉꢊꢅ ꢃ"ꢉꢁ
ꢒꢁ ꢓꢃ&ꢉꢄ ꢃꢌꢄꢃꢄꢐꢅꢇꢄ"ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢃꢄꢐꢅꢑꢉꢊꢅꢔꢕꢖ,ꢅ-ꢀꢒꢁ.ꢖꢁ
/ꢕ01 /ꢇ ꢃꢍꢅꢓꢃ&ꢉꢄ ꢃꢌꢄꢁꢅꢗꢎꢉꢌꢊꢉ%ꢃꢍꢇꢈꢈꢋꢅꢉ#ꢇꢍ%ꢅꢆꢇꢈ!ꢉꢅ ꢎꢌ)ꢄꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ ꢁ
ꢘ,21 ꢘꢉ$ꢉꢊꢉꢄꢍꢉꢅꢓꢃ&ꢉꢄ ꢃꢌꢄ'ꢅ! !ꢇꢈꢈꢋꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ'ꢅ$ꢌꢊꢅꢃꢄ$ꢌꢊ&ꢇ%ꢃꢌꢄꢅꢑ!ꢊꢑꢌ ꢉ ꢅꢌꢄꢈꢋꢁ
ꢖꢃꢍꢊꢌꢍꢎꢃꢑ ꢗꢉꢍꢎꢄꢌꢈꢌꢐꢋ ꢓꢊꢇ)ꢃꢄꢐ 0ꢚꢒꢜꢚ.ꢞ/
DS22194A-page 32
© 2009 Microchip Technology Inc.
MCP661/2/3/5
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆ& ꢄꢈꢈꢆ'ꢎꢊꢈꢋ(ꢃꢆꢕ&ꢑꢗꢆMꢆꢑꢄ))ꢒ*ꢐꢆꢘꢛꢜꢚꢆ ꢆ!ꢒꢅ"ꢆ#&'+,$
ꢑꢒꢊꢃ% 2ꢌꢊꢅ%ꢎꢉꢅ&ꢌ %ꢅꢍ!ꢊꢊꢉꢄ%ꢅꢑꢇꢍ*ꢇꢐꢉꢅ"ꢊꢇ)ꢃꢄꢐ 'ꢅꢑꢈꢉꢇ ꢉꢅ ꢉꢉꢅ%ꢎꢉꢅꢖꢃꢍꢊꢌꢍꢎꢃꢑꢅꢂꢇꢍ*ꢇꢐꢃꢄꢐꢅꢕꢑꢉꢍꢃ$ꢃꢍꢇ%ꢃꢌꢄꢅꢈꢌꢍꢇ%ꢉ"ꢅꢇ%ꢅ
ꢎ%%ꢑ133)))ꢁ&ꢃꢍꢊꢌꢍꢎꢃꢑꢁꢍꢌ&3ꢑꢇꢍ*ꢇꢐꢃꢄꢐ
© 2009 Microchip Technology Inc.
DS22194A-page 33
MCP661/2/3/5
-ꢚꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢆꢏꢈꢄꢊꢐꢆꢑꢒꢆꢂꢃꢄꢅꢆꢇꢄꢌꢓꢄꢔꢃꢆꢕꢖꢏꢗꢆMꢆꢘꢙꢘꢙꢚꢛꢜꢆ ꢆ!ꢒꢅ"ꢆ#ꢍꢏꢑ$
ꢑꢒꢊꢃ% 2ꢌꢊꢅ%ꢎꢉꢅ&ꢌ %ꢅꢍ!ꢊꢊꢉꢄ%ꢅꢑꢇꢍ*ꢇꢐꢉꢅ"ꢊꢇ)ꢃꢄꢐ 'ꢅꢑꢈꢉꢇ ꢉꢅ ꢉꢉꢅ%ꢎꢉꢅꢖꢃꢍꢊꢌꢍꢎꢃꢑꢅꢂꢇꢍ*ꢇꢐꢃꢄꢐꢅꢕꢑꢉꢍꢃ$ꢃꢍꢇ%ꢃꢌꢄꢅꢈꢌꢍꢇ%ꢉ"ꢅꢇ%ꢅ
ꢎ%%ꢑ133)))ꢁ&ꢃꢍꢊꢌꢍꢎꢃꢑꢁꢍꢌ&3ꢑꢇꢍ*ꢇꢐꢃꢄꢐ
D
e
b
N
N
L
K
E
E2
EXPOSED
PAD
NOTE 1
NOTE 1
2
1
1
2
D2
BOTTOM VIEW
TOP VIEW
A
A1
A3
NOTE 2
4ꢄꢃ%
ꢖꢙ55ꢙꢖ,ꢗ,ꢘꢕ
ꢓꢃ&ꢉꢄ ꢃꢌꢄꢅ5ꢃ&ꢃ%
ꢖꢙ6
67ꢖ
ꢀꢚ
ꢚꢁ.ꢚꢅ/ꢕ0
ꢚꢁꢛꢚ
ꢖꢔ8
6!&(ꢉꢊꢅꢌ$ꢅꢂꢃꢄ
ꢂꢃ%ꢍꢎ
7ꢆꢉꢊꢇꢈꢈꢅ;ꢉꢃꢐꢎ%
ꢕ%ꢇꢄ"ꢌ$$ꢅ
0ꢌꢄ%ꢇꢍ%ꢅꢗꢎꢃꢍ*ꢄꢉ
7ꢆꢉꢊꢇꢈꢈꢅ5ꢉꢄꢐ%ꢎ
,#ꢑꢌ ꢉ"ꢅꢂꢇ"ꢅ5ꢉꢄꢐ%ꢎ
7ꢆꢉꢊꢇꢈꢈꢅ<ꢃ"%ꢎ
6
ꢉ
ꢔ
ꢔꢀ
ꢔ+
ꢓ
ꢓꢏ
,
ꢚꢁ9ꢚ
ꢚꢁꢚꢚ
ꢀꢁꢚꢚ
ꢚꢁꢚ.
ꢚꢁꢚꢏ
ꢚꢁꢏꢚꢅꢘ,2
+ꢁꢚꢚꢅ/ꢕ0
ꢏꢁ+.
+ꢁꢚꢚꢅ/ꢕ0
ꢀꢁ.9
ꢚꢁꢏ.
ꢚꢁꢒꢚ
M
ꢏꢁꢏꢚ
ꢏꢁꢒ9
,#ꢑꢌ ꢉ"ꢅꢂꢇ"ꢅ<ꢃ"%ꢎ
0ꢌꢄ%ꢇꢍ%ꢅ<ꢃ"%ꢎ
0ꢌꢄ%ꢇꢍ%ꢅ5ꢉꢄꢐ%ꢎ
0ꢌꢄ%ꢇꢍ%ꢜ%ꢌꢜ,#ꢑꢌ ꢉ"ꢅꢂꢇ"
,ꢏ
(
5
ꢀꢁꢒꢚ
ꢚꢁꢀ9
ꢚꢁ+ꢚ
ꢚꢁꢏꢚ
ꢀꢁꢞ.
ꢚꢁ+ꢚ
ꢚꢁ.ꢚ
M
>
ꢑꢒꢊꢃꢉ%
ꢀꢁ ꢂꢃꢄꢅꢀꢅꢆꢃ !ꢇꢈꢅꢃꢄ"ꢉ#ꢅ$ꢉꢇ%!ꢊꢉꢅ&ꢇꢋꢅꢆꢇꢊꢋ'ꢅ(!%ꢅ&! %ꢅ(ꢉꢅꢈꢌꢍꢇ%ꢉ"ꢅ)ꢃ%ꢎꢃꢄꢅ%ꢎꢉꢅꢎꢇ%ꢍꢎꢉ"ꢅꢇꢊꢉꢇꢁ
ꢏꢁ ꢂꢇꢍ*ꢇꢐꢉꢅ&ꢇꢋꢅꢎꢇꢆꢉꢅꢌꢄꢉꢅꢌꢊꢅ&ꢌꢊꢉꢅꢉ#ꢑꢌ ꢉ"ꢅ%ꢃꢉꢅ(ꢇꢊ ꢅꢇ%ꢅꢉꢄ" ꢁ
+ꢁ ꢂꢇꢍ*ꢇꢐꢉꢅꢃ ꢅ ꢇ)ꢅ ꢃꢄꢐ!ꢈꢇ%ꢉ"ꢁ
ꢒꢁ ꢓꢃ&ꢉꢄ ꢃꢌꢄꢃꢄꢐꢅꢇꢄ"ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢃꢄꢐꢅꢑꢉꢊꢅꢔꢕꢖ,ꢅ-ꢀꢒꢁ.ꢖꢁ
/ꢕ01 /ꢇ ꢃꢍꢅꢓꢃ&ꢉꢄ ꢃꢌꢄꢁꢅꢗꢎꢉꢌꢊꢉ%ꢃꢍꢇꢈꢈꢋꢅꢉ#ꢇꢍ%ꢅꢆꢇꢈ!ꢉꢅ ꢎꢌ)ꢄꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ ꢁ
ꢘ,21 ꢘꢉ$ꢉꢊꢉꢄꢍꢉꢅꢓꢃ&ꢉꢄ ꢃꢌꢄ'ꢅ! !ꢇꢈꢈꢋꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ'ꢅ$ꢌꢊꢅꢃꢄ$ꢌꢊ&ꢇ%ꢃꢌꢄꢅꢑ!ꢊꢑꢌ ꢉ ꢅꢌꢄꢈꢋꢁ
ꢖꢃꢍꢊꢌꢍꢎꢃꢑ ꢗꢉꢍꢎꢄꢌꢈꢌꢐꢋ ꢓꢊꢇ)ꢃꢄꢐ 0ꢚꢒꢜꢚ:+/
DS22194A-page 34
© 2009 Microchip Technology Inc.
MCP661/2/3/5
-ꢚꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢆꢏꢈꢄꢊꢐꢆꢑꢒꢆꢂꢃꢄꢅꢆꢇꢄꢌꢓꢄꢔꢃꢆꢕꢖꢏꢗꢆMꢆꢘꢙꢘꢙꢚꢛꢜꢆ ꢆ!ꢒꢅ"ꢆ#ꢍꢏꢑ$
ꢑꢒꢊꢃ% 2ꢌꢊꢅ%ꢎꢉꢅ&ꢌ %ꢅꢍ!ꢊꢊꢉꢄ%ꢅꢑꢇꢍ*ꢇꢐꢉꢅ"ꢊꢇ)ꢃꢄꢐ 'ꢅꢑꢈꢉꢇ ꢉꢅ ꢉꢉꢅ%ꢎꢉꢅꢖꢃꢍꢊꢌꢍꢎꢃꢑꢅꢂꢇꢍ*ꢇꢐꢃꢄꢐꢅꢕꢑꢉꢍꢃ$ꢃꢍꢇ%ꢃꢌꢄꢅꢈꢌꢍꢇ%ꢉ"ꢅꢇ%ꢅ
ꢎ%%ꢑ133)))ꢁ&ꢃꢍꢊꢌꢍꢎꢃꢑꢁꢍꢌ&3ꢑꢇꢍ*ꢇꢐꢃꢄꢐ
© 2009 Microchip Technology Inc.
DS22194A-page 35
MCP661/2/3/5
-ꢚꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢖꢋꢌ)ꢒꢆ& ꢄꢈꢈꢆ'ꢎꢊꢈꢋ(ꢃꢆꢇꢄꢌꢓꢄꢔꢃꢆꢕ.ꢑꢗꢆ#ꢖ&'ꢇ$
ꢑꢒꢊꢃ% 2ꢌꢊꢅ%ꢎꢉꢅ&ꢌ %ꢅꢍ!ꢊꢊꢉꢄ%ꢅꢑꢇꢍ*ꢇꢐꢉꢅ"ꢊꢇ)ꢃꢄꢐ 'ꢅꢑꢈꢉꢇ ꢉꢅ ꢉꢉꢅ%ꢎꢉꢅꢖꢃꢍꢊꢌꢍꢎꢃꢑꢅꢂꢇꢍ*ꢇꢐꢃꢄꢐꢅꢕꢑꢉꢍꢃ$ꢃꢍꢇ%ꢃꢌꢄꢅꢈꢌꢍꢇ%ꢉ"ꢅꢇ%ꢅ
ꢎ%%ꢑ133)))ꢁ&ꢃꢍꢊꢌꢍꢎꢃꢑꢁꢍꢌ&3ꢑꢇꢍ*ꢇꢐꢃꢄꢐ
D
N
E
E1
NOTE 1
1
2
b
e
c
A
A2
φ
L
A1
L1
4ꢄꢃ%
ꢖꢙ55ꢙꢖ,ꢗ,ꢘꢕ
ꢓꢃ&ꢉꢄ ꢃꢌꢄꢅ5ꢃ&ꢃ%
ꢖꢙ6
67ꢖ
ꢖꢔ8
6!&(ꢉꢊꢅꢌ$ꢅꢂꢃꢄ
ꢂꢃ%ꢍꢎ
6
ꢉ
ꢀꢚ
ꢚꢁ.ꢚꢅ/ꢕ0
7ꢆꢉꢊꢇꢈꢈꢅ;ꢉꢃꢐꢎ%
ꢖꢌꢈ"ꢉ"ꢅꢂꢇꢍ*ꢇꢐꢉꢅꢗꢎꢃꢍ*ꢄꢉ
ꢕ%ꢇꢄ"ꢌ$$ꢅ
7ꢆꢉꢊꢇꢈꢈꢅ<ꢃ"%ꢎ
ꢖꢌꢈ"ꢉ"ꢅꢂꢇꢍ*ꢇꢐꢉꢅ<ꢃ"%ꢎ
7ꢆꢉꢊꢇꢈꢈꢅ5ꢉꢄꢐ%ꢎ
2ꢌꢌ%ꢅ5ꢉꢄꢐ%ꢎ
ꢔ
M
ꢚꢁꢞ.
ꢚꢁꢚꢚ
M
ꢚꢁ9.
ꢀꢁꢀꢚ
ꢚꢁꢛ.
ꢚꢁꢀ.
ꢔꢏ
ꢔꢀ
,
,ꢀ
ꢓ
M
ꢒꢁꢛꢚꢅ/ꢕ0
+ꢁꢚꢚꢅ/ꢕ0
+ꢁꢚꢚꢅ/ꢕ0
ꢚꢁ:ꢚ
5
ꢚꢁꢒꢚ
ꢚꢁ9ꢚ
2ꢌꢌ%ꢑꢊꢃꢄ%
2ꢌꢌ%ꢅꢔꢄꢐꢈꢉ
5ꢀ
ꢀ
ꢚꢁꢛ.ꢅꢘ,2
M
ꢚꢟ
9ꢟ
5ꢉꢇ"ꢅꢗꢎꢃꢍ*ꢄꢉ
5ꢉꢇ"ꢅ<ꢃ"%ꢎ
ꢍ
(
ꢚꢁꢚ9
ꢚꢁꢀ.
M
M
ꢚꢁꢏ+
ꢚꢁ++
ꢑꢒꢊꢃꢉ%
ꢀꢁ ꢂꢃꢄꢅꢀꢅꢆꢃ !ꢇꢈꢅꢃꢄ"ꢉ#ꢅ$ꢉꢇ%!ꢊꢉꢅ&ꢇꢋꢅꢆꢇꢊꢋ'ꢅ(!%ꢅ&! %ꢅ(ꢉꢅꢈꢌꢍꢇ%ꢉ"ꢅ)ꢃ%ꢎꢃꢄꢅ%ꢎꢉꢅꢎꢇ%ꢍꢎꢉ"ꢅꢇꢊꢉꢇꢁ
ꢏꢁ ꢓꢃ&ꢉꢄ ꢃꢌꢄ ꢅꢓꢅꢇꢄ"ꢅ,ꢀꢅ"ꢌꢅꢄꢌ%ꢅꢃꢄꢍꢈ!"ꢉꢅ&ꢌꢈ"ꢅ$ꢈꢇ ꢎꢅꢌꢊꢅꢑꢊꢌ%ꢊ! ꢃꢌꢄ ꢁꢅꢖꢌꢈ"ꢅ$ꢈꢇ ꢎꢅꢌꢊꢅꢑꢊꢌ%ꢊ! ꢃꢌꢄ ꢅ ꢎꢇꢈꢈꢅꢄꢌ%ꢅꢉ#ꢍꢉꢉ"ꢅꢚꢁꢀ.ꢅ&&ꢅꢑꢉꢊꢅ ꢃ"ꢉꢁ
+ꢁ ꢓꢃ&ꢉꢄ ꢃꢌꢄꢃꢄꢐꢅꢇꢄ"ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢃꢄꢐꢅꢑꢉꢊꢅꢔꢕꢖ,ꢅ-ꢀꢒꢁ.ꢖꢁ
/ꢕ01 /ꢇ ꢃꢍꢅꢓꢃ&ꢉꢄ ꢃꢌꢄꢁꢅꢗꢎꢉꢌꢊꢉ%ꢃꢍꢇꢈꢈꢋꢅꢉ#ꢇꢍ%ꢅꢆꢇꢈ!ꢉꢅ ꢎꢌ)ꢄꢅ)ꢃ%ꢎꢌ!%ꢅ%ꢌꢈꢉꢊꢇꢄꢍꢉ ꢁ
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DS22194A-page 36
© 2009 Microchip Technology Inc.
MCP661/2/3/5
APPENDIX A: REVISION HISTORY
Revision A (July 2009)
• Original Release of this Document.
© 2009 Microchip Technology Inc.
DS22194A-page 37
MCP661/2/3/5
NOTES:
DS22194A-page 38
© 2009 Microchip Technology Inc.
MCP661/2/3/5
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
-X
/XX
Examples:
a)
MCP661T-E/SN: Tape and Reel
Temperature
Range
Package
Extended temperature,
8LD SOIC package
a)
b)
MCP662T-E/MF: Tape and Reel
Device:
MCP661
MCP661T
Single Op Amp
Single Op Amp (Tape and Reel)
(SOIC)
Dual Op Amp
Dual Op Amp (Tape and Reel)
(DFN and SOIC)
Extended temperature,
8LD DFN package
MCP662T-E/SN: Tape and Reel
MCP662
MCP662T
Extended temperature,
8LD SOIC package
MCP663
MCP663T
Single Op Amp with CS
Single Op Amp with CS (Tape and Reel)
(SOIC)
a)
MCP663T-E/SN: Tape and Reel
Extended temperature,
8LD SOIC package
MCP665
MCP665T
Dual Op Amp with CS
Dual Op Amp with CS (Tape and Reel)
(DFN and MSOP)
a)
b)
MCP665T-E/MF: Tape and Reel
Extended temperature,
10LD DFN package
MCP665T-E/UN: Tape and Reel
Temperature Range:
Package:
E
=
=
-40°C to +125°C
Extended temperature,
10LD MSOP package
MF
Plastic Dual Flat, No Lead (3×3 DFN),
8-lead, 10-lead
SN
UN
=
=
Plastic Small Outline (3.90 mm), 8-lead
Plastic Micro Small Outline (MSOP), 10-lead
© 2009 Microchip Technology Inc.
DS22194A-page 39
MCP661/2/3/5
NOTES:
DS22194A-page 40
© 2009 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
rfPIC and UNI/O are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICkit, PICDEM, PICDEM.net,
PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total
Endurance, TSHARC, WiperLock and ZENA are trademarks
of Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2009 Microchip Technology Inc.
DS22194A-page 41
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4080
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Boston
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Seoul
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Cleveland
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Detroit
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-6578-300
Fax: 886-3-6578-370
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Santa Clara
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
03/26/09
DS22194A-page 42
© 2009 Microchip Technology Inc.
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