MIC24420YML-TR [MICROCHIP]

SWITCHING REGULATOR;
MIC24420YML-TR
型号: MIC24420YML-TR
厂家: MICROCHIP    MICROCHIP
描述:

SWITCHING REGULATOR

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MIC24420/MIC24421  
2.5A Dual Output PWM Synchronous  
Buck Regulator IC  
General Description  
Features  
The MIC24420/MIC24421 are synchronous PWM dual  
output step down converters with internal 2.5A high-side  
switches. The MIC24420/MIC24421 has an integrated low-  
side gate driver for synchronous step-down conversion by  
connecting an external N-channel MOSFET to achieve  
high efficiencies in low duty-cycle applications.  
4.5V to 15V input voltage range  
Adjustable output voltages down to 0.7V  
2.5A per channel  
180° out of phase operation  
Pre-biased output startup capability  
Low-side driver for synchronous operation  
2% output voltage accuracy (over temperature)  
500kHz (MIC24421) and 1MHz (MIC24420) switching  
frequency  
Output voltage sequencing  
The MIC24420 switching frequency is 1MHz and the  
MIC24421 switching frequency is 500kHz. A patented  
control scheme allows the use of a wide range of output  
capacitance from small ceramic capacitors to large  
electrolytic types with only one compensation component.  
A 2% output voltage tolerance over the temperature range  
allows the maximum level of system performance. The  
MIC24420/MIC24421 power good signal allows full control  
for sequencing the output voltages with minimum external  
components.  
Programmable max current limit  
Power good output  
Ramp Control™ provides soft-start  
Low-side current sensing allows very low duty-cycle  
Works with ceramic output capacitors  
24-pin 4mm x 4mm MLF® package  
Junction temperature range of –40°C to +125°C  
An adjustable current limit allows the use of smaller  
inductors in lower current applications.  
The MIC24420/MIC24421 is available in a ePad 24-pin  
4mm x 4mm MLF® package, and has an operating junction  
temperature range of –40°C to +125°C.  
Applications  
Multi-output power supplies with sequencing  
DSP, FPGA, CPU and ASIC power supplies  
Telecom and networking equipment, servers  
_________________________________________________________________________________________________________________________  
Typical Application  
MIC24420 Dual Output Buck Converter  
Ramp Control is a trademark of Micrel, Inc.  
MLF and MicroLeadFrame are registered trademarks of Amkor Technology, Inc.  
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com  
M9999-062012-C  
June 2012  
Micrel, Inc.  
MIC24420/MIC24421  
Ordering Information  
Switching  
Frequency  
Part Number  
MIC24420YML  
MIC24421YML  
Notes:  
Voltage  
Adj  
Temperature Range  
-40°C to +125°C  
-40°C to +125°C  
Package  
24-Pin 4mm x 4mm MLF®  
24-Pin 4mm x 4mm MLF®  
Lead Finish  
Pb-Free  
1MHz  
Pb-Free  
Adj  
500kHz  
1. MLF® is GREEN RoHS compliant package. Lead finish is NiPdAu. Mold compound is Halogen Free.  
2. MLF® z= Pin 1 identifier  
Pin Configuration  
24-Pin 4mm x 4mm MLF (ML)  
Pin Description  
Pin Number  
Pin Name  
Pin Description  
Boost 1 (Input): Provides voltage for high-side internal MOSFET for channel 1. Connect a  
0.01µF capacitor from SW1 to BST1 pin and a diode to PVDD.  
1
BST1  
Low-side Drive 1 (Output): External low-side N-Channel MOSFET driver. Use 4.5V rated  
MOSFETs.  
2
3
4
LSD1  
PGND1  
CS1  
Power Ground 1 (Input).  
Current Sense 1 (Input): Place a resistor from SW1 to this pin to program the current limit point  
from 0.5A to 2.7A.  
Power Good 1 (Output): Open drain. Device is in the OFF state. i.e. high when output is within  
90% of regulation.  
5
6
PG1  
Enable/Delay 1 (Input): This pin can be used to disable VOUT1. When used to disable VOUT1, this  
pin must be pulled down to ground in less than 1µs for proper operation. It is also used for soft-  
start of the output. Soft start capacitor range is 4.7nF to 22nF. See Functional Description  
section for additional information.  
EN/DLY1  
7
8
COMP1  
FB1  
Compensation 1 (Input): Pin for external compensation, Channel 1.  
Feedback 1 (Input): Input to Ch1 error amplifier. Regulates to 0.7V.  
5V Internal Linear Regulator (Output): Connect to an external 4.7µF bypass capacitor. When  
9
AVDD  
AGND  
VIN is <6V, this regulator operates in drop-out mode. Connect AVDD to VIN when VIN <6V.  
Analog Ground (Input): Control section ground. Connect to PGND.  
10  
11  
12  
FB2  
Feedback 2 (Input): Input to Channel 2 error amplifier. Regulates to 0.7V.  
Compensation 2 (Input): Pin for external compensation, Channel 2.  
COMP2  
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June 2012  
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Micrel, Inc.  
MIC24420/MIC24421  
Pin Description (Continued)  
Pin Number  
Pin Name  
Pin Description  
Enable/Delay 2 (Input): This pin can be used to disable VOUT2. When used to disable VOUT2, this  
pin must be pulled down to ground in less than 1µs for proper operation. It is also used for soft-  
start of the output. Soft start capacitor range is 4.7nF to 22nF. See Functional Description  
section for additional information.  
13  
EN/DLY2  
Power Good 2 (Output) Open drain. Device is in the OFF state. i.e. high when output is within  
90% of regulation  
14  
PG2  
Current Sense 2 (Input) Place a resistor from SW2 to this pin to program the current limit point  
from 0.5A to 2.7A  
15  
16  
17  
CS2  
PGND2  
LSD2  
Power Ground 2 (Input)  
Low-side Drive 2 (Output): External low-side N-Channel MOSFET driver. Use 4.5V rated  
MOSFETs.  
Boost 2 (Input): Provides voltage for high-side internal MOSFET for Channel 2. Connect a  
0.01µF capacitor from SW2 to BST2 pin and a diode to PVDD.  
18  
BST2  
19  
20  
SW2  
Switch Node 2 (Output): Source of internal high-side power MOSFET.  
VIND2  
Supply voltage (Input): For the drain of internal high-side power MOSFET 4.5V to 13.2V.  
5V VDD input (input): Power connection to the internal MOSFET drivers. Connect to AVDD  
through an RC filter  
21  
PVDD  
22  
23  
24  
EP  
VIN  
VIND1  
SW1  
Supply voltage (Input): For the internal 5V linear regulator. 4.5V to 13.2V.  
Supply voltage (Input): For the drain of internal high-side power MOSFET 4.5V to 13.2V.  
Switch Node 1 (Output): Source of internal high-side power MOSFET.  
ePad  
Exposed thermal pad for package only. Connect to ground. Must make a full connection to the  
ground plane to maximize thermal performance of the package.  
M9999-062012-C  
June 2012  
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Micrel, Inc.  
MIC24420/MIC24421  
Absolute Maximum Ratings(1)  
Operating Ratings(2)  
VIN to PGND .................................................... –0.3V to 16V  
VIND1, VIND2 to PGND........................................ –0.3V to 16V  
VDD to PGND ..................................................... –0.3V to 6V  
VSW1, VSW2 to PGND ............................0.7V to (VIN + 0.3V)  
VCS1, VCS2 to PGND .............................0.7V to (VIN + 0.3V)  
VBST1 to VSW1, VBST2 to VSW2............................... –0.3V to 6V  
VBST1, VBST2 to PGND.................................0.3V to VSW+6V  
VEN/DLY, VCOMP, VFB, VPG to PGND ....–0.7V to (VAVDD + 0.3V)  
PGND1, PGND2 to AGND........................... –0.3V to +0.3V  
Junction Temperature ................................................ 150°C  
Storage Temperature ...............................65°C to +150°C  
Lead Temperature (soldering, 10 sec.)...................... 260°C  
ESD Rating (3) ................................................ ESD Sensitive  
Supply Voltage (VIN)...................................... +4.5V to +15V  
Output Voltage Range (VOUT)……………......0.7V to 0.7*VIN  
Maximum Output Current (IOUT)…………….. ................2.5A  
Junction Temperature (TJ) ........................40°C to +125°C  
Junction Thermal Resistance  
4mmx4mm MLF-24L (θJC) .................................14°C/W  
4mmx4mm MLF-24L (θJA) .................................35°C/W  
Electrical Characteristics(4)  
VIN = 12V; VEN=5V; VOUT=1.8V; ILOAD=10mA; TA = 25°C, bold values indicate –40°CTJ +125°C, unless noted.  
Parameter  
Condition  
Min  
Typ  
Max  
Units  
Power Input Supply  
Input Voltage Range (VIN)  
Quiescent Supply Current  
Shutdown Current  
4.5  
15  
7
V
VFB = 0.8V, IOUT = 0A; Both outputs not switching  
VEN1 = VEN2 = 0V  
2.6  
25  
mA  
µA  
V
50  
VIN UVLO Turn-On Threshold  
VIN UVLO Hysteresis  
VDD Supply  
VIN Rising, VDD = VIN  
3.6  
4.1  
400  
4.45  
mV  
VDD = VIN  
Internal Bias Voltages AVDD  
Reference (Each Channel)  
Feedback Reference Voltage  
FB Bias Current  
VFB = 0.8V, IAVDD = 50mA  
4.7  
5.1  
5.45  
V
686  
700  
5
714  
mV  
nA  
VFB = 0.7V  
FB Line Regulation  
VIN = 6V to 15V, IOU T = 10mA  
VIN = 6V to 15V , VOUT = 1.8V, IOU T = 1A; each channel  
0.005  
0.005  
0.15  
%/V  
%/V  
%
Output Voltage Line Regulation  
Output Voltage Load Regulation VOUT = 1.8V, IOU T = 0A to 2A; each channel  
VIN = 6V to 15V , IOU T = 0.25A to 2A, VOUT = 1.8V ; each  
Output Voltage Total Regulation  
channel  
0.1  
%
External Current Sense, Adjustable  
Current Limit Trip Point Current  
Sourcing current  
175  
200  
750  
0
225  
µA  
ppm/°C  
mV  
Current Limit Temperature  
Coefficient  
TJ = -40°C to 125°C  
Current Limit Comparator Offset  
-20  
10  
M9999-062012-C  
June 2012  
4
Micrel, Inc.  
MIC24420/MIC24421  
Electrical Characteristics(4) (Continued)  
Parameter  
Condition  
Min  
Typ  
Max  
Units  
Oscillator / PWM  
MIC24420  
MIC24421  
MIC24420  
MIC24421  
0.8  
0.4  
70  
1
1.2  
0.6  
Switching Frequency  
Maximum Duty Cycle  
MHz  
0.5  
76  
90  
60  
%
85  
Minimum On-Time  
I
LOAD > 200mA (5)  
ns  
High-side Internal MOSFET  
On Resistance RDS(ON)  
IFET = 1A, VFB=0.8V  
150  
mΩ  
Low-side MOSFET Driver  
Pull Up, ISOURCE = 10mA  
Pull Down; ISINK = 10mA  
Rising Into 1000pF  
Falling Into 1000pF  
(Adaptive)  
4
2.5  
12  
9
Ω
Ω
DH On-Resistance  
DH Transition Time  
ns  
ns  
ns  
Driver Non-overlap Dead Time  
EN/DLY and Soft-start Control  
EN/DLY Pull-up Current  
AVDD Threshold  
25  
VEN/DLY1= VEN/DLY2 = 0V  
AVDD turns on  
5.5  
0.4  
1.1  
2
7
8.5  
0.65  
1.8  
µA  
V
0.58  
1.35  
2.4  
Soft-start Begins Threshold  
Soft-start Ends Threshold  
Power Good  
Channel soft-start begins  
Channel soft-start ends  
V
2.8  
V
PG Threshold Voltage  
PG Output Low Voltage  
PG Leakage Current  
VOUT Rising (% of VOUT nominal)  
VFB = 0V, IPG = 1mA  
85  
90  
0.08  
5
95  
%Nom  
V
0.3  
VFB = 800mV, VPG = 5.5V  
nA  
Thermal Protection  
Over-temperature Shutdown  
TJ Rising  
165  
22  
°C  
°C  
Over-temperature Shutdown  
Hysteresis  
Notes:  
1. Exceeding the absolute maximum rating may damage the device.  
2. The device is not guaranteed to function outside its operating rating.  
3. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5kin series with 100pF.  
4. Specification for packaged product only.  
5. Minimum on-time before automatic cycle skipping begins. See applications section.  
M9999-062012-C  
June 2012  
5
Micrel, Inc.  
MIC24420/MIC24421  
Typical Characteristics  
Enable and Switching Start  
Operating Current vs Input  
Voltage (O/P regulating)  
UVLO vs Temperature  
Thresholds vs. VIN  
4.25  
45  
40  
35  
30  
25  
20  
15  
10  
5
1.6  
1.4  
1.2  
1
4.2  
MIC24420  
4.15  
SW on  
UVLO rising  
4.1  
VDD on  
4.05  
0.8  
0.6  
0.4  
0.2  
0
UVLO falling  
4
MIC24421  
3.95  
3.9  
VDD off  
VOUT1/2 = 1.2V/3.3V  
No Load  
3.85  
0
4
6
8
10  
12  
14  
16  
-60 -40 -20  
0
20  
40  
60  
80 100 120 140  
4
6
8
10  
12  
14  
16  
VIN (V)  
Temperature (°C)  
Input Voltage (V)  
Current Limit trip Voltage vs  
Temperature  
Regulation vs. Load  
VIN = 12V  
Regulation vs. Input Voltage  
10  
5
3.4  
3.38  
3.36  
3.34  
3.32  
3.3  
3.40  
3.38  
3.36  
3.34  
3.32  
3.30  
3.28  
3.26  
3.24  
3.22  
3.20  
0
-5  
3.28  
3.26  
3.24  
3.22  
3.2  
-10  
-15  
-20  
VOUT = 3.3V  
= 12V  
VIN = 12V  
VOUT = 3.3V  
V
IN  
-60 -40 -20  
0
20 40 60 80 100 120 140  
5
7
9
11  
13  
15  
0
0.5  
1
1.5  
2
TEMPERATURE (°C)  
INPUT VOLTABE (V)  
OUTPUT CURRENT (A)  
Efficiency vs. Load  
VIN = 5V  
Efficiency vs. Load  
VIN = 12V  
Current Sense Source Current  
vs Temperature  
100%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0%  
225  
100%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
0%  
215  
205  
195  
185  
175  
165  
VOUT = 0.7V  
VOUT = 1.2V  
VOUT = 3.3V  
VOUT = 5V  
VOUT = 3.3V  
VOUT = 0.7V  
VOUT = 1.2V  
V
IN  
= 12V  
V
= 12V  
V
= 5V  
IN  
IN  
0
0.5  
1
1.5  
2
2.5  
0
0.5  
1
1.5  
2
2.5  
-60 -40 -20  
0
20 40 60 80 100 120 140  
OUTPUT CURRENT (A)  
OUTPUT CURRENT (A)  
TEMPERATURE (°C)  
M9999-062012-C  
June 2012  
6
Micrel, Inc.  
MIC24420/MIC24421  
Functional Characteristics  
M9999-062012-C  
June 2012  
7
Micrel, Inc.  
MIC24420/MIC24421  
Functional Characteristics (Continued)  
M9999-062012-C  
June 2012  
8
Micrel, Inc.  
MIC24420/MIC24421  
Functional Characteristics (Continued)  
Bode Plot MIC24420  
(12V to 5V @ 1.5A)  
Bode Plot MIC24421  
(12V to 5V @ 1.5A)  
180  
144  
108  
72  
180  
144  
108  
72  
50  
40  
50  
40  
30  
30  
20  
20  
36  
36  
10  
10  
0
0
0
0
-36  
-72  
-108  
-144  
-180  
-36  
-72  
-108  
-144  
-180  
-10  
-20  
-30  
-40  
-50  
-10  
-20  
-30  
-40  
-50  
Gain  
Gain  
Phas e  
Phas e  
1
10  
100  
1000  
1
10  
100  
1000  
FREQUENCY (kHz)  
FREQUENCY (kHz)  
M9999-062012-C  
June 2012  
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Micrel, Inc.  
MIC24420/MIC24421  
Functional Diagram  
PWM Core  
MIC24420 Block Diagram  
M9999-062012-C  
June 2012  
10  
Micrel, Inc.  
MIC24420/MIC24421  
A 4.7µF ceramic capacitor should be used to decouple  
AVDD to ground.  
Functional Description  
The MIC24420/MIC24421 are dual output, synchronous  
buck regulators. Output regulation is performed using a  
fixed frequency, voltage mode control scheme. The fixed  
frequency clock drives the two sections 180° out of  
phase, which reduces input ripple current.  
EN/DLY pin  
The EN/DLY pins are used to turn on, turn off and soft-  
start the outputs. The pins can be controlled with an  
open collector or open drain device as shown in Figure  
1. It must not be actively driven high or damage will  
result. When disabling the output with an external  
device, the enable pin turn-off time must be less than  
1µs.  
Oscillator  
An internal oscillator provides a clock signal to each of  
the two sides. The clock signals are 180° out of phase  
with the other. Each phase is used to generate a ramp  
for the PWM comparator and a clock pulse that  
terminates the switching cycle. The MIC24420 &  
MIC24421 oscillator frequencies are nominally 1MHz  
and 500 kHz respectively.  
UVLO  
The UVLO monitors voltage on the VIN pin. The circuit  
controls both regulators (side1 and side2). It disables the  
output drivers and discharges the EN/DLY capacitor  
when VIN is below the UVLO threshold. As VIN rises  
above the threshold, the internal high-side FET drivers  
and external low-side drives are enabled and the  
EN/DLY pins are released.  
Figure 1. Enable and soft-start circuit  
A low impedance source should be used to supply input  
voltage to the MIC24420/MIC24421. When VIN drops  
below the UVLO threshold and the outputs turn off, the  
change in input current will cause VIN to rise. The  
output voltage will momentarily turn back on if the rise in  
VIN is greater than the UVLO hysteresis.  
The preferred method is to use the EN/DLY pins, as  
shown in Figure 1, for startup and shutdown of the  
outputs. This avoids the possibility of glitching during  
startup and shutdown. If an external control signal is not  
available, the circuit in Figure 1A may be used to set a  
higher turn-on and turn-off threshold than the internal  
UVLO circuit. Moreover, the hysteresis is adjustable and  
can accommodate a wider input source impedance  
range. Please refer to the MIC841 datasheet for  
additional information on selecting the resistor values.  
Figure 1A. Adjustable UVLO startup circuit  
Minimum Output Load when Disabled  
Regulator/Reference  
When one output is disabled and the other enabled, the  
disabled output requires a minimum output load to  
prevent its output voltage from rising. Typically a 2k  
load on the output will keep the output voltage below  
100mV. The output setting voltage divider resistors may  
be used for the 2kload if the total resistance is set low  
enough. A separate output resistor should be used for  
lower output voltages since the voltage divider  
resistance becomes impractically low.  
The internal regulator generates an AVDD pin voltage  
that powers the internal analog circuit blocks of the low  
level analog and digital sections. The AVDD voltage is  
also used by the bandgap to generate a nominal 700mV  
for the error amplifier reference. The output undervoltage  
and power good circuits use the bandgap for their  
references. PVDD powers the high-side MOSFET and  
low-side gate drive circuits.  
The dropout of the internal regulator causes AVDD to  
drop when VIN is below 6V. When operating below 6V,  
the AVDD pin must be jumpered to VIN. This bypasses  
the internal LDO and prevents AVDD from dropping out.  
M9999-062012-C  
June 2012  
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Micrel, Inc.  
MIC24420/MIC24421  
Soft-start  
can be connected to another regulator’s EN/DLY pin for  
sequencing of the outputs. A pull-up resistor is not used  
when the power good pin is connected to another  
regulators EN/DLY pin.  
Enable and soft-start waveforms are shown in Figure 2.  
Output Sequencing  
Sequencing of the outputs can be easily implemented as  
shown in Figure 3. The power good pin is used to  
disable VOUT2 until the VOUT1 reaches regulation.  
Sequencing waveforms are shown in Figure 4.  
Figure 2. Soft-start Timing Diagram  
A capacitor, CSS, is connected to the EN/DLY pin. The  
CSS capacitor range is 4.7nF to 22nF. Releasing the pin  
allows an internal current source to charge the capacitor.  
The delay (tD) between the EN/DLY pin release and  
when VOUT starts to rise can be calculated by the  
equation below.  
CSS × VThreshold_Start  
Figure 3. Output Sequencing  
tD  
=
ISS  
Where:  
SS is the soft-start capacitor.  
SS is the internal soft-start current (7µA nominal).  
C
I
VThreshold_start is the EN/DLY pin voltage where the output  
starts to rise (1.35V nominal).  
The output voltage starts to rise when voltage on the  
EN/DLY pin reaches the start threshold. The output  
voltage reaches regulation when the EN/DLY pin voltage  
reaches the end threshold. The output voltage rise time  
(tR) can be calculated by the equation below:  
CSS ×(VThreshold_End VThreshold_Start  
)
tR =  
ISS  
Where:  
VThreshold_End is the EN/DLY pin voltage where the output  
reaches regulation (2.4V nominal).  
As the MIC24420/MIC24421 uses a fold-back, hiccup  
mode current limit, care should be taken to select tR to  
ensure startup. See application information for details.  
Figure 4. Output Sequencing Waveforms  
Power Good  
Power good is an open drain signal that asserts when  
VOUT exceed the power good threshold. The circuit  
monitors the FB pin. The internal FET is turned on while  
the FB voltage is below the FB threshold. When voltage  
on the FB in exceeds the FB threshold, the FET is  
turned off. A pull-up resistor can be connected to PVDD  
or an external source. The external source voltage must  
not exceed the maximum rating of the pin. The PG pin  
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June 2012  
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Micrel, Inc.  
MIC24420/MIC24421  
High-side Drive  
discharging the gate through the LSD pin. The return  
path is through the PGND pin and back to the  
MOSFET’s Source pin. These circuit paths must be kept  
short to minimize noise. See the layout section for  
additional information.  
The internal high-side drive circuit is designed to switch  
the internal N-channel MOSFET. Figure 5 shows a  
diagram of the high-side MOSFET, gate drive and  
bootstrap circuit. D2 and CBST comprise the bootstrap  
circuit, which supplies drive voltage to the high-side  
MOSFET. Bootstrap capacitor CBST is charged through  
diode D2 when the low-side MOSFET turns on and pulls  
the SW pin voltage to ground. When the high-side  
MOSFET driver is turned on, energy from CBST charges  
the MOSFET gate, turning it on. Voltage on the SW pin  
increases to approximately VIN. Diode D2 is reversed  
biased and CBST flies high while maintaining gate voltage  
on the high-side MOSFET.  
Driving the low-side MOSFET on and off dissipates  
power in the MIC24420/21 regulator. The power can be  
calculated by the equation below:  
PDRIVER = QG × V × fS  
IN  
Where:  
PDRIVER is the power dissipated in the regulator by  
switching the MOSFET on and off.  
QG is the total Gate charge of the MOSFET at VGS  
PVDD.  
=
A resistor should be added in series with the BST1 and  
BST2 pins. This will slow down the turn-on time of the  
high-side MOSFET while leaving the turn-off time  
unaffected. Slowing down the MOSFET risetime will  
reduce the turn-on overshoot at the switch node, which  
is important when operating with an input voltage close  
to the maximum operating voltage.  
VIN is the input voltage to the internal AVDD regulator.  
fS is the switching frequency of the regulator  
(1MHz/500kHz nominal).  
dV/dt Induced Turn-on of the Low-side MOSFET  
As the high-side MOSFET turns on, the rising dv/dt on  
the switch-node forces current through CGD of the low-  
side MOSFET causing a glitch on its gate. Figure 6  
demonstrates the basic mechanism causing this issue. If  
the glitch on the gate is greater than the MOSFET’s turn-  
on threshold, it may cause an unwanted turn-on of the  
low-side MOSFET while the high-side MOSFET is on. A  
short circuit between input and ground would  
momentarily occur, which lowers efficiency and  
increases power dissipation in both MOSFETs.  
Additionally, turning on the low-side MOSFET during the  
off-time could interfere with overcurrent sensing.  
The recommended capacitor for CBST is a 0.01µF  
ceramic capacitor. The recommended value for RBST is  
20to 60.  
Figure 5. High-side Drive Circuitry  
Low-side Drive Output  
The LSD pin is used to drive an external MOSFET. This  
MOSFET is driven out of phase with the internal high-  
side MOSFET to conduct inductor current during the  
high-side MOSFETs off-time. Circuitry internal to the  
regulator prevents short circuit “shoot-through” current  
from flowing by preventing the high-side and low-side  
MOSFETs conducting at the same time.  
Figure 6. dV/dt induced turn-on of the low-side MOSFET  
The low-side MOSFET gate voltage is supplied from  
PVDD. Turn off of the MOSFET is accomplished by  
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MIC24420/MIC24421  
The following steps can be taken to lower the gate drive  
impedance, minimize the dv/dt induced current and  
lower the MOSFET’s susceptibility to the induced glitch:  
Choose a low-side MOSFET with a high  
CGS/CGD ratio and a low internal gate resistance.  
Do not put a resistor between the LSD output  
and the gate.  
Ensure both the gate drive and return etch are  
short, low inductance connections.  
Use a 4.5V VGS rated MOSFET. It’s higher gate  
threshold voltage is more immune to glitches  
than a 2.5V or 3.3V rated MOSFET. MOSFETs  
that are rated for operation at less than 4.5 VGS  
should not be used.  
Figure 7. Over-current Circuit  
Inductor current, IL, flows from the lower MOSFET  
source to the drain during the off-time, causing the drain  
voltage to become negative with respect to ground. This  
negative voltage is proportional to the instantaneous  
inductor current times the MOSFET RDS(ON). The low-  
side MOSFET voltage becomes even more negative as  
the output current increases.  
Add a resistor in series with the BST pin. This  
will slow down the turn-on time of the high-side  
MOSFET while leaving the turn-off time  
unaffected.  
Pre-biased output protection:  
The over-current circuit operates by passing a known  
fixed current source through a resistor RCS. This sets up  
an offset voltage (ICS x RCS) that is compared to the VDS  
of the low-side MOSFET. When ISD (source-to-drain  
current) x RDS(ON) is equal to this voltage the soft-start  
circuit is reset and a hiccup current mode is initiated to  
protect the power supply and load from excessive  
current during short circuits. Fold back current limiting is  
recommended to protect the switch devices during short  
circuit faults. For more information on this, see the  
application information section.  
It is desirable in synchronous step down converters such  
as MIC24420/MIC24421, to prevent the low-side  
MOSFET from switching during startup or short periods  
in an idle state, since during these times it is possible  
that a voltage exists on the output of the converter. If the  
low-side switch is allowed to operate, uncontrolled in this  
state, large transient voltages can be created at the  
switching nodes by ‘open-loop boost’ operation. To  
prevent this unwanted operation, the MIC24420/24421  
will gradually increase switching cycles on the low-side  
MOSFET in ratio to the soft start ramping waveform. Full  
operation of the low-side driver is achieved when the  
ramp reaches the soft start end threshold (nominally  
2.4V) when output voltage is at its nominal level.  
Current Limit Calculations and Maximum Peak Limit  
Proper current limiting requires careful selection of the  
inductor value and saturation current. If a short circuit  
occurs during the off-time, the overcurrent circuit will  
take up to a full cycle to detect the overcurrent once it  
exceeds the over-current limit. The worst case occurs if  
the output current is 0A and a hard short is applied to the  
output. The short circuit causes the output voltage to fall,  
which increases the pulse width of the regulator. It may  
take 3 or 4 cycles for the current to build up in the  
inductor before current limit forces the part into hiccup  
mode. The wider pulse width generates a larger peak to  
peak inductor current which can saturate the inductor.  
Current Limit  
The MIC24420/MIC24421 use the synchronous (low-  
side) MOSFET’s RDS(ON) to sense an over-current  
condition. The low-side MOSFET is used because it  
displays lower parasitic oscillations after switching than  
the upper MOSFET. Additionally, reduces false tripping  
at lower voltage outputs and narrow duty cycles since  
the off-time increases as duty cycle decreases. Figure 7  
shows how over-current protection is performed using  
the low-side MOSFET.  
For this reason, the minimum inductor values for the  
MIC24420/MIC24421 are 10µH/22µH respectively and  
the maximum peak current limit set-point is 2.7A. The  
saturation current for each of these inductors should be  
at least 1.5A higher than the overcurrent limit setting.  
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Voltage Setting Components  
Thermal Protection  
The regulator requires two external resistors to set the  
output voltage as shown in Figure 8.  
The internal temperature of the regulator is monitored to  
prevent damage to the device. Both outputs are inhibited  
from switching if the over-temperature threshold is  
exceeded. Hysteresis in the circuit allows the regulator  
to cool before turning back on.  
Figure 8. Setting the Output Voltage  
The output voltage is determined by the equation below.  
R1  
R2  
VOUT = VREF × 1+  
Where: VREF is 0.7V nominal.  
If the voltage divider resistance is used to provide the  
minimum load (see EN/DLY section) then R1 should be  
low enough to provide the necessary impedance.  
Once R1 is selected, R2 can be calculated with the  
following formula.  
VREF × R1  
R2 =  
VOUT VREF  
And  
R2 + R1< 2kΩ  
Minimum Pulse Width  
Output voltage is regulated by adjusting the on-time  
pulse width of the high-side MOSFET. This is  
accomplished by comparing the error amplifier output  
with a sawtooth waveform (see block diagram). The  
pulse width output of the comparator becomes smaller  
as the error amplifier voltage decreases. Due to  
propagation delay and other circuit limitations, there is a  
minimum pulse width at the output of the comparator. If  
the error amplifier voltage drops any further, the output  
of the comparator will be low.  
The PWM circuit will skip pulses if a smaller duty cycle is  
required to maintain output voltage regulation. This  
effectively cuts the output frequency in half.  
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MIC24420/MIC24421  
usually available from the magnetics vendor.  
Application Information  
Input Capacitor  
Component Selection  
A 10μF ceramic is suggested on each of the VIN pins for  
bypassing. X5R or X7R dielectrics are recommended for  
the input capacitor. Y5V dielectrics should not be used.  
Besides losing most of their capacitance over  
temperature, they also become resistive at high  
frequencies, which reduce their ability to filter out high  
frequency noise.  
Inductor  
The value of inductance is determined by the peak-to-  
peak inductor current. Higher values of inductance  
reduce the inductor current ripple at the expense of a  
larger inductor. Smaller inductance values allow faster  
response to output current transients but increase the  
output ripple voltage and require more output  
capacitance.  
Output Capacitor  
The MIC24420/MIC24421 regulator is designed for  
ceramic output capacitors although tantalum and  
Aluminum Electrolytic may also be used.  
The inductor value and saturation current are also  
controlled by the method of overcurrent limit used (see  
explanation in the previous section). The minimum value  
of inductance for the MIC24420/MIC24421 is  
10µH/22µH.  
Output ripple voltage is determined by the magnitude of  
inductor current ripple, the output capacitor’s ESR and  
the value of output capacitance. When using ceramic  
output capacitors, the primary contributor to output ripple  
is the value of capacitance. Output ripple using ceramic  
capacitors may be calculated using the equation below:  
The peak-to-peak ripple current may be calculated using  
the formula below.  
VOUT (η VIN(max) VOUT  
η VIN(max) fS L  
)
IPP  
=
IPP  
COUT  
8 ΔVOUT 2 fS  
Where:  
IPP is the peak-to-peak inductor ripple current  
L is the value of inductance  
Where:  
ΔVOUT is the peak-to-peak output voltage ripple  
fS is the switching frequency of the regulator  
η is the efficiency of the power supply  
IPP is the peak-to-peak ripple current as see by the  
capacitors  
fS is the switching frequency (1MHz nominal).  
Efficiency values from the Functional Characteristics  
section can be use for these calculations.  
When using tantalum or aluminum electrolytic  
capacitors, both the capacitance and ESR contribute to  
output ripple. The total ripple is calculated below:  
The peak inductor current in each channel is equal to the  
average output current plus one half of the peak to peak  
inductor ripple current.  
2
IPP  
2
IPK = IOUT + 0.5 ×IPP  
The RMS inductor current is used to calculate the I2R  
ΔVOUT  
=
+
[IPP RESR  
]
8COUT 2fS  
losses in the inductor.  
2
The output capacitor RMS current is calculated below:  
IPP  
1
3
IPP  
I
=
1+  
IOUT  
INDUCTORRMS  
IOUT  
ICOUT  
=
RMS  
12  
Maximizing efficiency requires the proper selection of  
core material and minimizing the winding resistance. The  
high frequency operation of the MIC24420/MIC24421  
requires the use of ferrite materials. Lower cost iron  
powder cores may be used but the increase in core loss  
will reduce the efficiency of the power supply. This is  
especially noticeable at low output power. The inductor  
winding resistance decreases efficiency at the higher  
output current levels. The winding resistance must be  
minimized although this usually comes at the expense of  
a larger inductor.  
The power dissipated in the output capacitors can be  
calculated by the equation below:  
2
P
=
(
I
)
RESR  
DISSCOUT  
COUTRMS  
Soft start capacitor considerations:  
Where a large amount of capacitance is present at the  
output of the regulator, a fast rising output voltage can,  
in extreme circumstances (since I=Cdv/dt), cause  
current limit to operate and prevent startup. In order to  
avoid this situation, the following equation can be used  
to ensure tR (output rise time) is set correctly.  
The power dissipated in the inductor equals the sum of  
the core and copper losses. Core loss information is  
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MIC24420/MIC24421  
COUT VOUT ISS  
Short Circuit Protection  
CSS >  
IS /C  
It is recommended that a fold-back current characteristic  
be implemented to protect both external and internal  
MOSFETs during short circuit (S/C) events. This can be  
achieved by the addition of one additional resistor RFBK  
(R14 & R19 on the evaluation board) from VOUT to the  
CS pin.  
Where  
IS/C is the short circuit, fold-back current limit.  
SS is the capacitor connected to EN/DLY pin  
SS is the EN/DLY pull up current.  
C
I
Current Limit Resistor  
The current limit circuit responds to the peak inductor  
current flowing through the low-side FET. Calculating the  
current setting resistor RCS should take into account the  
peak inductor current and the blanking delay of  
approximately 100ns.  
Figure 9a. Short Circuit Protection  
Current limit will occur at:  
VOUT RCS  
1
IOC  
=
ICS RCS  
+
VCS _OFF  
RDS(ON)  
RFBK  
Where VCS_OFF is the CS comparator offset voltage.  
Figure 9. Overcurrent waveform  
For simplicity, assuming VCS_OFF is 0V, we can set IS/C  
(current limit when VOUT = 0V) to be half IOC (current limit  
when VOUT = nominal):  
Figure 9 shows the low-side MOSFET current waveform.  
Peak current is measured after a small delay. The  
equations used to calculate the current limit resistor  
value are shown below:  
IOC RDS(ON)  
RCS  
=
ICS 2  
VOUT  
IPP  
RFBK  
=
IPK = IOUT  
ICS  
2
To determine worst case values, one must take into  
account VCS offset voltage, ICS range and the range of  
values for RDS(ON) over the operating temperature range.  
VOUT tDLY  
IOC = IPK −  
L
IOC RDSON  
Some typical example values for a 30mΩ MOSFET:  
RCS  
=
ICS  
VOUT  
IOC  
3.3A  
4.3A  
3.3A  
4.3A  
3.3A  
4.3A  
IS/C RCS  
RFBK  
1.7  
1.7  
1.7  
1.7  
1.7  
1.7  
249  
249  
249  
249  
249  
249  
24.9k  
16k  
Where:  
OC is the current limit set point  
L = inductor value  
5
I
16.5k  
10.5k  
5.1k  
3.3  
1.2  
t
DLY = Current limit blanking time ~ 100ns  
I
CS is the overcurrent pin sense current (200µA nominal)  
R
DS(ON) is the on resistance of the low-side MOSFET  
3.83k  
Due to the leading edge blanking, a 100ns slew rate for  
the CS pin can be applied without interfering with current  
limit operation. Limiting the CS pin’s slew rate will help to  
prevent false triggering. A C·R product of at least 20ns  
should be used.  
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MIC24420/MIC24421  
E.G. Where RCS = 250, CCS = 82pF  
is outlined below.  
1. Measure the ringing frequency at the switch node  
which is determined by parasitic LP and CP. Define this  
frequency as f1.  
Snubber  
A snubber is used to damp out high frequency ringing  
caused by parasitic inductance and capacitance in the  
buck converter circuit. Figure 10 shows a simplified  
schematic of one of the buck converter phases. Stray  
capacitance consists mostly of the output capacitance  
(COSS) of the two MOSFET’s. The stray inductance is  
mostly package and etch inductance. The arrows show  
the resonant current path when the high-side MOSFET  
turns on. This ringing causes stress on the  
semiconductors in the circuit as well as increased EMI.  
2. Add a capacitor CS (normally at least 3 times as big as  
the COSS of the FET) from the switch node to ground and  
measure the new ringing frequency. Define this new  
(lower) frequency as f2. LP and CP can now be solved  
using the values of f1, f2 and CS.  
3. Add a resistor RS in series with CS to generate critical  
damping.  
Step 1: First measure the ringing frequency on the  
switch node voltage when the high-side MOSFET turns  
on. This ringing is characterized by the equation:  
1
f1 =  
2π LP CP  
Where:  
CP and LP are the parasitic capacitance and inductance  
Step 2: Add a capacitor, CS, in parallel with the  
synchronous MOSFET, Q2. The capacitor value should  
be approximately 3 times the COSS of Q2. Measure the  
frequency of the switch node ringing, f2.  
1
f2 =  
2π LP (CS + CP)  
Figure 10. Output Parasitics  
Define f’ as:  
f1  
f'=  
One method of reducing the ringing is to use a resistor to  
lower the Q of the resonant circuit. The circuit in Figure  
11 shows an RC network connected between the switch  
node and ground. Capacitor CS is used to block DC and  
minimize the power dissipation in the resistor. This  
capacitor value should be between 5 and 10 times the  
parasitic capacitance of the MOSFET COSS. A capacitor  
that is too small will have high impedance and prevent  
the resistor from damping the ringing. A capacitor that is  
too large causes unnecessary power dissipation in the  
resistor, which lowers efficiency.  
f2  
Combining the equations for f1, f2 and f’ to derive CP, the  
parasitic capacitance  
CS  
2 (f' )2 1  
CP  
=
LP is solved by re-arranging the equation for f1.  
1
LP  
=
2
(
2π  
)
CP (f1)2  
The snubber components should be placed as close as  
possible to the low-side MOSFET and/or external  
Schottky diode since it contributes to most of the stray  
capacitance. Placing the snubber too far from the  
MOSFET or using traces that are too long or too thin  
adds inductance to the snubber and diminishes its  
effectiveness.  
Step 3: Calculate the damping resistor.  
Critical damping occurs at Q=1  
1
LP  
Q =  
= 1  
RS CS + CP  
Solving for RS  
LP  
Proper snubber design requires the parasitic inductance  
and capacitance be known. A method of determining  
these values and calculating the damping resistor value  
RS  
=
CS + CP  
Figure 11 shows the snubber in the circuit and the  
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MIC24420/MIC24421  
damped switch node waveform.  
QG is the gate charge for both of the external MOSFETs.  
This information should be obtained from the  
manufacturer’s data sheet.  
Since current from the gate drive is supplied by the input  
voltage, power dissipated in the MIC24420/MIC24421  
due to gate drive is:  
PGATE_DRIVE = QG fS VIN  
Parameters that are important to MOSFET selection are:  
Voltage rating  
On resistance  
Total gate charge  
The MOSFET is subjected to a VDS equal to the input  
voltage. A safety factor of 20% should be added to the  
VDS(max) of the MOSFET to account for voltage spikes  
due to circuit parasitics. Generally, 30V MOSFETs are  
recommended for all applications since lower VDS rated  
MOSFETs tend to have a VGS rating that is lower than  
the recommended 4.5V.  
Figure 11. Snubber Circuit  
The snubber capacitor, CS, is charged and discharged  
each switching cycle. The energy stored in CS is  
dissipated by the snubber resistor, RS, two times per  
switching period. This power is calculated in the  
equation below.  
RMS Current and MOSFET Power Dissipation  
Calculation  
Switching loss in the low-side MOSFET can be  
neglected since it is turned on and off at a VDS of 0V.  
The power dissipated in the MOSFET is mostly  
conduction loss during the on-time (PCONDUCTION).  
2
Psnubber = fS CS VIN  
Where:  
PCONDUCTION = ISW_RMS2 RDS(ON)  
fS is the switching frequency for each phase  
VIN is the DC input voltage  
Where:  
Low-side MOSFET Selection  
R
DS(ON) is the on resistance of the MOSFET switch.  
An external N-channel logic level power MOSFET must  
be used for the low-side switch. The MOSFET gate to  
source drive voltage of the MIC24420/MIC24421 is  
regulated by an internal 5V regulator. Logic level  
MOSFETs, whose operation is specified at VGS = 4.5V  
must be used. Use of MOSFETs with a lower specified  
VGS (such as 3.3V or 2.5V) are not recommended since  
the low threshold can cause them to turn on when the  
high-side FET is turning on. When operating the  
regulator below a 6V input, connect VDD to VIN to prevent  
the VDD regulator from dropping out.  
The RMS value of the MOSFET current is:  
2
IPP  
2
ISW_RMS = (1D) (IOUT_MAX  
+
)
12  
Where:  
D is the duty-cycle of the converter  
IPP is the inductor ripple current  
VOUT  
D =  
η VIN  
Total gate charge is the charge required to turn the  
MOSFET on and off under specified operating conditions  
(VDS and VGS). The gate charge is supplied by the  
regulator’s gate drive circuit. Gate charge is a source of  
power dissipation in the regulator due to the high  
switching frequencies. At low output load this power  
dissipation is noticeable as a reduction in efficiency. The  
average current required to drive the MOSFETs is:  
Where:  
η is the efficiency of the converter.  
External Schottky Diode  
A freewheeling diode in parallel with the low-side  
MOSFET is needed to maintain continuous inductor  
current flow while both MOSFETs are turned off (dead-  
time). Dead-time is necessary to prevent current from  
flowing unimpeded through both MOSFETs. An external  
Schottky diode is used to bypass the low-side  
MOSFET’s parasitic body diode. An external diode  
IDD = QG fS  
Where:  
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MIC24420/MIC24421  
improves efficiency due to its lower forward voltage drop  
as compared to the internal parasitic diode in the  
MOSFET. It may also decrease high frequency noise  
because the schottky diode junction does not suffer from  
reverse recovery.  
s
1+  
ωz  
Gfilter(s) =  
2
s
s
1+  
+
Q
ωo  
ωo  
An external Schottky diode conducts at a lower forward  
voltage preventing the body diode in the MOSFET from  
turning on. The lower forward voltage drop dissipates  
less power than the body diode. Depending on the circuit  
components and operating conditions, an external  
Schottky diode may give up to 1% improvement in  
efficiency.  
Where:  
1
ωz =  
ωo =  
CO RESR  
1
CO LO  
Compensation  
CO  
The voltage regulation, filter and power stage sections  
are shown in Figure 12. The error amplifier regulates the  
output voltage and compensates the voltage regulation  
loop. It is a simplified type III compensator utilizing two  
compensating zeros and two poles. Figure 12 also  
shows the transfer function for each section.  
Q = R ⋅  
L
The Modulator gain is proportional to the input voltage  
and inversely proportional to the internal ramp voltage  
generated by the oscillator. The peak-to-peak ramp  
voltage is 1V.  
Compensation is necessary to insure the control loop  
has adequate bandwidth and phase margin to properly  
respond to input voltage and output current transients.  
High gain at DC and low frequencies is needed for  
accurate output voltage regulation. Attenuation near the  
switching frequency prevents switching frequency noise  
from interfering with the control loop.  
VIN  
Gmod =  
VRAMP  
The output voltage divider attenuates VOUT and feeds it  
back to the error amplifier. The divider gain is:  
VREF  
R4  
H =  
=
R1+ R4 VOUT  
The output filter contains a complex double pole formed  
by the capacitor and inductor and a zero from the output  
capacitor and its ESR. The transfer function of the filter  
is:  
Figure 12. Voltage Loop and Transfer Functions  
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MIC24420/MIC24421  
The modulator, filter and voltage divider gains can be  
multiplied together to show the open loop gain of these  
parts.  
s
s
⎞⎛  
⎟⎜  
1+  
1+  
1+  
ωz1  
s
ωz2  
s
⎠⎝  
⎞⎛  
Gea(s) = GDC  
×
⎟⎜  
⎟⎜  
1+  
Gvd(s) = Gfilter(s)HGmod  
ωp1  
ωp2  
⎠⎝  
This transfer function is plotted in Figure 13. At low  
frequency, the transfer function gain equals the  
modulator gain times the voltage divider gain. As the  
frequency increases toward the LC filter resonant  
frequency, the gain starts to peak. The increase in the  
gain’s amplitude equals Q. Just above the resonant  
frequency, the gain drops at a -40db/decade rate. The  
phase quickly drops from 0° to almost 180° before the  
phase boost of the zero brings it back up to -90°. Higher  
values of Q will cause the phase to drop quickly. In a  
well damped, low Q system the phase will change more  
slowly.  
The GDC is the DC gain of the error amplifier. It is  
internally set to 2500 (68dB).  
As illustrated in Figure 12, there are two compensating  
zeros. ωz1 is internally set with R3 and C3. The zero  
frequency is fixed at  
a
nominal 16kHz in the  
MIC24420/MIC24421. The second zero, ωz2, is set by  
the external capacitor, C2.  
For the MIC24420:  
R3 = 100k  
C3 = 100pf  
1
As the Gain/Phase plot approaches the zero frequency  
(fZ), formed by CO and its ESR, the slope of the gain  
curve changes from -40db/dec. to -20db/dec and the  
phase increases. The zero causes a 90° phase boost.  
Ceramic capacitors, with their smaller values of  
capacitance and ESR, push the zero and its phase boost  
out to higher frequencies, which allow the phase lag  
from the LC filter to drop closer to -180°. The system will  
be close to being unstable if the overall open loop gain  
crosses 0dB while the phase is close to -180°.  
fz1 =  
= 16kHz  
2× π × R3 × C3  
1
fz2 =  
2 × π × 21103 × C2  
The two compensating pole frequencies are shown  
below.  
fp1 = 250Hz  
1
fp2 =  
2× π ×12 103 × C2  
Gvd Transfer Function  
fp2 and fz2 both depend on the value of C2 and are  
proportionally spaced in frequency with the zero at a  
lower frequency than the pole. This provides gain and  
phase boost in the control loop.  
50  
40  
90  
60  
30  
30  
Gain  
20  
0
Voltage Divider Feedforward Capacitor  
10  
-30  
-60  
-90  
-120  
-150  
-180  
-210  
The capacitor across the upper voltage divider resistor  
boosts the gain and phase of the control loop by short  
circuiting the high-side resistor at higher frequencies.  
The capacitor and upper resistor form a zero at a lower  
frequency. The capacitor and parallel combination of  
upper and lower resistors form a pole at a higher  
frequency. This phase boost circuit is most effective at  
higher output voltages, where there is a larger  
attenuation from the voltage divider resistors.  
Phase  
0
-10  
-20  
-30  
-40  
-50  
VIN = 12V  
VOUT = 1.8V  
COUT = 20µF  
L = 4.7µH  
10  
100  
1000  
10000 100000 1000000  
FREQUENCY (Hz)  
Figure 13: Gvd Transfer Function  
If the output capacitance and/or ESR is high, the zero  
moves lower in frequency and helps to boost the phase,  
leading to a more stable system.  
Error Amplifier Poles and Zeros  
The error amplifier has internal poles and zeros that can  
be shifted in frequency with an external capacitor. The  
general form of the error amplifier compensation is  
shown in the equation below:  
M9999-062012-C  
June 2012  
21  
Micrel, Inc.  
MIC24420/MIC24421  
The general form of the feedforward circuit is shown  
below.  
MIC24420  
C16/17 R22/23 C29/30  
VOUT R1  
R2  
2.32k  
1.4k  
1k  
C7/8  
220pF  
220pF  
220pF  
150pF  
150pF  
150pF  
150pF  
LMIN  
10µH  
10µH  
10µH  
10µH  
10µH  
10µH  
10µH  
CoMIN  
47µF  
47µF  
47µF  
47µF  
47µF  
47µF  
47µF  
1.0V  
1.2V  
1.4V  
1.8V  
2.5V  
3.3V  
5.0V  
1k  
1k  
1k  
1k  
1k  
1k  
1k  
3.3nF  
3.3nF  
3.3nF  
4.7nF  
10nF  
10nF  
10nF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
NF  
s
1+  
ωz3  
s
R2  
H(s) =  
×
R1+ R2  
634  
383  
274  
162  
1+  
ωp3  
Where:  
1
fz3 =  
fp3 =  
2× π × R1× C1  
MIC24421  
1
VOUT R1  
R2  
2.32k  
1.4k  
1k  
C7/8  
C16/17 R22/23 C29/30  
LMIN  
22µH  
22µH  
22µH  
22µH  
22µH  
22µH  
22µH  
CoMIN  
100µF  
100µF  
100µF  
100µF  
100µF  
100µF  
100µF  
R1× R2  
R1+ R2  
1.0V  
1.2V  
1.4V  
1.8V  
2.5V  
3.3V  
5.0V  
1k  
1k  
1k  
1k  
1k  
1k  
1k  
1000pF  
1000pF  
1000pF  
1000pF  
1000pF  
1000pF  
1000pF  
22nF  
22nF  
22nF  
22nF  
22nF  
22nF  
22nF  
22k  
22k  
22k  
22k  
22k  
22k  
22k  
100nF  
100nF  
100nF  
100nF  
100nF  
100nF  
100nF  
2× π × C1×  
The total open loop transfer function is:  
634  
383  
274  
162  
T(s) = Gea(s) × Gmod × Gfilter(s)× H(s)  
The following tables list the recommended values of  
compensation and filter components for different output  
voltages. The output capacitors are ceramic.  
M9999-062012-C  
June 2012  
22  
Micrel, Inc.  
MIC24420/MIC24421  
Do not replace the ceramic input capacitor with any  
other type of capacitor. Any type of capacitor can be  
placed in parallel with the input capacitor.  
PCB Layout Guidelines  
Warning!!! To minimize EMI and output noise, follow  
these layout recommendations.  
If a Tantalum input capacitor is placed in parallel  
with the input capacitor, it must be recommended for  
switching regulator applications and the operating  
voltage must be derated by 50%.  
PCB Layout is critical to achieve reliable, stable and  
efficient performance. A ground plane is required to  
control EMI and minimize the inductance in power,  
signal and return paths.  
In “Hot-Plug” applications, a Tantalum or Electrolytic  
bypass capacitor must be used to limit the over-  
voltage spike seen on the input supply with power is  
suddenly applied. The value must be sufficiently  
large to prevent this voltage spike from exceeding  
The following guidelines should be followed to insure  
proper operation of the MIC24420/MIC24421 converter.  
IC  
Place the IC and the external Low-side MOSFET  
close to the point of load (POL).  
the  
maximum  
voltage  
rating  
of  
the  
MIC24420/MIC24421.  
Use fat traces to route the input and output power  
lines.  
An additional Tantalum or Electrolytic bypass input  
capacitor of 22µF or higher is required at the input  
power connection.  
The exposed pad (EP) on the bottom of the IC must  
be connected to the ground.  
Inductor  
Use several vias to connect the EP to the ground  
plane on layer 2.  
Keep the inductor connection to the switch node  
(SW) short.  
Signal and power grounds should be kept separate  
and connected at only one location, the EP ground  
of the package.  
Do not route any digital or analog signal lines  
underneath or close to the inductor.  
Keep the switch node (SW) away from the feedback  
(FB) pin.  
The following signals and their components should  
be decoupled or referenced to the power ground  
plane: VIND1, VIND2, PVDD, PGND1, PGND2,  
LSD1, and LSD2.  
To minimize noise, place a ground plane underneath  
the inductor.  
These analog signals should be referenced or  
decoupled to the analog ground plane: VIN,  
EN/DLY1, EN/DLY2, COMP1, COMP2, FB1, and  
FB2.  
Output Capacitor  
Use a wide trace to connect the output capacitor  
ground terminal to the input capacitor ground  
terminal.  
Place the overcurrent sense resistor close to the  
CS1 or CS2 pins. The trace coming from the switch  
node to this resistor has high dv/dt and should be  
routed away from other noise sensitive components  
and traces. Avoid routing this trace under the  
inductor to prevent noise from coupling into the  
signal.  
Phase margin will change as the output capacitor  
value and ESR changes. Contact the factory if the  
output capacitor is different from what is shown in  
the BOM.  
The feedback trace should be separate from the  
power trace and connected as close as possible to  
the output capacitor. Sensing a long high current  
load trace can degrade the DC load regulation.  
Input Capacitor  
Place the input capacitor next. Ceramic capacitors  
must be placed between VIND1 and PGND1 and  
between VIND2 and PGND2.  
If 0603 package ceramic output capacitors are used,  
then make sure that it has enough capacitance at  
the desired output voltage. Please refer to the  
capacitor datasheet for more details.  
Place the input capacitors on the same side of the  
board and as close to the IC and low-side MOSFET  
as possible.  
Diode  
The external Schottky diode is placed next to the  
low-side MOSFET.  
Keep both the VIN and PGND connections short.  
Place several vias to the ground plane close to the  
input capacitor ground terminal, but not between the  
input capacitors and IC pins.  
The connection from the Schottky diode’s Anode to  
the input capacitors ground terminal must be as  
short as possible.  
Use either X7R or X5R dielectric input capacitors.  
Do not use Y5V or Z5U type capacitors.  
The diode’s Cathode connection to the switch node  
M9999-062012-C  
June 2012  
23  
Micrel, Inc.  
MIC24420/MIC24421  
the effect of dv/dt inducted turn-on.  
(SW) must be keep as short as possible.  
RC Snubber  
Place the RC snubber on the same side of the board  
Do not put a resistor between the LSD output and  
the gate.  
Use a 4.5V Vgs rated MOSFET. Its higher gate  
threshold voltage is more immune to glitches than a  
2.5V or 3.3V rated MOSFET. MOSFETs that are  
rated for operation at less than 4.5VGS should not be  
used.  
and as close as possible to the low-side MOSFET.  
Low-side MOSFET  
Low-side drive MOSFET traces (LSD pin to  
MOSFET gate pin) must be short and routed over a  
ground plane. The ground plane should be the  
connection between the MOSFET source and  
PGND.  
High-side MOSFET  
Add a 20 to 60 ohm resistor in series with the boost  
pin. This will slow down the turn-on time of the high-  
side MOSFET while leaving the turn-off time  
unaffected.  
Chose a low-side MOSFET with a high CGS/CGD  
ratio and a low internal gate resistance to minimize  
M9999-062012-C  
June 2012  
24  
Micrel, Inc.  
MIC24420/MIC24421  
MIC24420 Evaluation Board Schematic  
M9999-062012-C  
June 2012  
25  
Micrel, Inc.  
MIC24420/MIC24421  
MIC24420 Bill of Materials  
Item  
Part Number  
Manufacturer  
Murata(1)  
AVX(2)  
Description  
Qty.  
GRM32ER61E226KE15  
12103D226MAT2A  
06033D103MAT2A  
GRM21BR70J225KA01  
08056D225MAT2A  
VJ0603Y151KXXMB  
VJ0603Y221KXXMB  
GRM31CR60J476ME19  
12066D476MAT2A  
06033D105MAT2A  
VJ0603Y103KXXMB  
VJ0603Y471KXXMB  
GRM188R60J475KE19  
06036D475MAT2A  
VJ0603Y820KXXMB  
EEEFP1E151AP  
3
C1, C2, C13  
C4, C10, C16, C17  
C5  
Ceramic Capacitor, 22µF, 25V, X5R  
Ceramic Capacitor, 10nF, 25V  
Ceramic Capacitor, 2.2µF, 6.3V  
AVX  
4
1
Murata  
AVX  
Vishay(3)  
Vishay  
Murata  
AVX  
C7  
C8  
Ceramic Capacitor, 150pF, 50V, X7R  
Ceramic Capacitor, 220pF, 50V, X7R  
1
1
C11, C14  
Ceramic Capacitor, 47µF, 6.3V, X5R  
2
C12  
AVX  
Ceramic Capacitor, 1µF, 25V  
1
2
2
1
C16, C17  
C18, C19  
Vishay  
Vishay  
Murata  
AVX  
Ceramic Capacitor, 10nF, 50V, X7R  
Ceramic Capacitor, 470pF, 50V, X7R  
C20  
Ceramic Capacitor, 4.7µF, 6.3V  
C21, C22  
C23  
Vishay  
Panasonic  
Vishay  
Ceramic Capacitor, 82pF  
2
1
4
0
2
2
2
2
1
2
2
1
2
2
2
2
1
1
1
150uF, 25V, AL.EL. (80mΩ ESR)  
Ceramic Capacitor, 100nF, 50V, X7R  
Not Fitted  
C24, C25, C26, C27, C28  
C29, C30  
D1, D2  
VJ0603Y104KXXMB  
SD103BWS  
Vishay  
Schottky Diode, 100mA, 30V  
Schottky Diode, 30V, 0.5A  
Inductor, 10 µH, 2.5A  
D3, D4  
B0530W  
Diodes. Inc(4)  
Cooper(5)  
L1, L2  
DR74-10R-R  
R1, R6  
CRCW06031001FRT1  
CRCW06032740FRT1  
CRCW06031002FRT1  
CRCW06032490FRT1  
CRCW06031401FRT1  
CRCW06030000FRT1  
CRCW06034992FRT1  
CRCW06036040FRT1  
CRCW06032210FRT1  
CRCW06031472FRT1  
CRCW060310R0FRT1  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Resistor, 1k (0603 size), 1%  
Resistor, 274 (0603 size), 1%  
Resistor, 10k (0603 size), 1%  
Resistor, 249 (0603 size), 1%  
Resistor, 1.4k (0603 size), 1%  
Resistor, 0(0603 size)  
R2  
R3, R8  
R4, R5  
R7  
R9, R15  
R12, R13  
R10, R11  
R16, R17  
R14  
Resistor, 49.9k (0603 size), 1%  
Resistor, 60.4 (0603 size), 1%  
Resistor, 22.1 (0603 size), 1%  
Resistor, 14.7k (0603 size), 1%  
Resistor, 10 (0603 size), 1%  
R18  
R19  
CRCW06035761FRT1  
Vishay Dale  
Resistor, 5.76k (0603 size), 1%  
R20, R21  
R22, R23  
Q1, Q2  
CRCW080512R1FRT1  
Vishay Dale  
-
Fairchild(6)  
Resistor, 12.1(0805 size), 1%  
2
0
2
2
1
-
Not Fitter  
MOSFET  
MOSFET  
FDC855N  
BSS138  
Q3, Q4  
Fairchild  
2A Dual Output PWM Synchronous Buck  
Regulator IC  
U1  
MIC24420YML  
Micrel, Inc.(7)  
Notes:  
1. Murata: www.murata.com  
2. AVX: www.avx.com  
M9999-062012-C  
June 2012  
26  
Micrel, Inc.  
MIC24420/MIC24421  
3. Vishay: www.vishay.com  
4. Diodes Inc.: www.diodes.com  
5. Cooper Magnetics: www.cooperet.com  
6. Fairchild Semiconductor: www.fairchildsemi.com  
7. Micrel, Inc.: www.micrel.com  
M9999-062012-C  
June 2012  
27  
Micrel, Inc.  
MIC24420/MIC24421  
MIC24421 Bill of Materials  
Item  
Part Number  
Manufacturer  
Murata(1)  
AVX(2)  
Description  
Qty.  
GRM32ER61E226KE15  
12103D226MAT2A  
06033D103MAT2A  
GRM21BR70J225KA01  
08056D225MAT2A  
VJ0603Y102KXXMB  
GRM31CR60J107ME39L  
06033D105MAT2A  
VJ0603Y223KXXMB  
VJ0603Y471KXXMB  
GRM188R60J475KE19  
06036D475MAT2A  
VJ0603Y101KXXMB  
EEEFP1E151AP  
3
C1, C2, C13  
C4, C10  
C5  
Ceramic Capacitor, 22µF, 25V, X5R  
Ceramic Capacitor, 10nF, 25V  
Ceramic Capacitor, 2.2µF, 6.3V  
AVX  
4
1
Murata  
AVX  
Vishay(3)  
Murata  
AVX  
C7, C8  
Ceramic Capacitor, 1000pF, 50V, X7R  
Ceramic Capacitor, 100µF, 6.3V, X5R  
Ceramic Capacitor, 1µF, 25V  
1
2
1
2
2
1
C11, C14  
C12  
C16, C17  
C18, C19  
Vishay  
Vishay  
Murata  
AVX  
Ceramic Capacitor, 22nF, 50V, X7R  
Ceramic Capacitor, 470pF, 50V, X7R  
C20  
Ceramic Capacitor, 4.7µF, 6.3V  
C21, C22  
C23  
Vishay  
Panasonic  
Ceramic Capacitor, 100pF  
2
1
7
150uF, 25V, AL.EL. (80mΩ ESR)  
C24, C25, C26, C27,  
C28, C29, C30  
VJ0603Y104KXXMB  
Vishay  
Ceramic Capacitor, 100nF, 50V, X7R  
D1, D2  
D3, D4  
L1, L2  
R1, R6  
R2  
SD103BWS  
Vishay  
Diodes. Inc(4)  
Schottky Diode, 100mA, 30V  
Schottky Diode, 30V, 0.5A  
Inductor, 22 µH, 7A  
2
2
2
2
1
2
2
1
2
2
2
2
1
1
1
B0530W  
CDRH125-220  
Murata  
CRCW06031001FRT1  
CRCW06032740FRT1  
CRCW06031002FRT1  
CRCW06032490FRT1  
CRCW06031401FRT1  
CRCW06030000FRT1  
CRCW06034992FRT1  
CRCW06036040FRT1  
CRCW06032210FRT1  
CRCW06031652FRT1  
CRCW060310R0FRT1  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Vishay Dale  
Resistor, 1k (0603 size), 1%  
Resistor, 274 (0603 size), 1%  
Resistor, 10k (0603 size), 1%  
Resistor, 249 (0603 size), 1%  
Resistor, 1.4k (0603 size), 1%  
Resistor, 0(0603 size)  
R3, R8  
R4, R5  
R7  
R9, R15  
R12, R13  
R10, R11  
R16, R17  
R14  
Resistor, 49.9k (0603 size), 1%  
Resistor, 60.4 (0603 size), 1%  
Resistor, 22.1 (0603 size), 1%  
Resistor, 16.5k (0603 size), 1%  
Resistor, 10 (0603 size), 1%  
R18  
R19  
CRCW06035101FRT1  
Vishay Dale  
Resistor, 5.1k (0603 size), 1%  
R20, R21  
R22, R23  
Q1, Q2  
CRCW080512R1FRT1  
CRCW06032202FRT1  
FDC855N  
Vishay Dale  
Vishay Dale  
Fairchild(5)  
Fairchild  
Resistor, 12.1(0805 size), 1%  
Resistor, 22k(0603 size), 1%  
MOSFET  
2
2
2
2
1
Q3, Q4  
BSS138  
MOSFET  
2A Dual Output PWM Synchronous Buck  
Regulator IC  
U1  
MIC24421YML  
Micrel, Inc.(6)  
Notes:  
1. Murata: www.murata.com  
2. AVX: www.avx.com  
3. Vishay: www.vishay.com  
4. Diodes Inc.: www.diodes.com  
M9999-062012-C  
June 2012  
28  
Micrel, Inc.  
MIC24420/MIC24421  
5. Fairchild Semiconductor: www.fairchildsemi.com  
6. Micrel, Inc.: www.micrel.com  
M9999-062012-C  
June 2012  
29  
Micrel, Inc.  
MIC24420/MIC24421  
PCB Layout Recommendations  
Top Layer  
Mid Layer 1  
M9999-062012-C  
June 2012  
30  
Micrel, Inc.  
MIC24420/MIC24421  
PCB Layout Recommendations  
Mid Layer 2  
Bottom Layer  
M9999-062012-C  
June 2012  
31  
Micrel, Inc.  
MIC24420/MIC24421  
Package Information  
24-Pin 4mm x 4mm MLF® (ML)  
M9999-062012-C  
June 2012  
32  
Micrel, Inc.  
MIC24420/MIC24421  
Recommended Land Pattern  
24-Pin 4mm x 4mm MLF®  
(ML  
)
M9999-062012-C  
June 2012  
33  
Micrel, Inc.  
MIC24420/MIC24421  
MICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA  
TEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB http://www.micrel.com  
Micrel makes no representations or warranties with respect to the accuracy or completeness of the information furnished in this data sheet. This  
information is not intended as a warranty and Micrel does not assume responsibility for its use. Micrel reserves the right to change circuitry,  
specifications and descriptions at any time without notice. No license, whether express, implied, arising by estoppel or otherwise, to any intellectual  
property rights is granted by this document. Except as provided in Micrel’s terms and conditions of sale for such products, Micrel assumes no liability  
whatsoever, and Micrel disclaims any express or implied warranty relating to the sale and/or use of Micrel products including liability or warranties  
relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right.  
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product  
can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant  
into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A  
Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully  
indemnify Micrel for any damages resulting from such use or sale.  
© 2009 Micrel, Incorporated.  
M9999-062012-C  
June 2012  
34  

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