MIC4452YM-TR [MICROCHIP]
12A Peak Low-Side MOSFET Drivers;
| 型号： | MIC4452YM-TR |
| 厂家： | 
MICROCHIP |
| 描述： | 12A Peak Low-Side MOSFET Drivers |
| 文件： | 总24页 (文件大小：2637K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC4451/52
12A Peak Low-Side MOSFET Drivers
Features
General Description
• BiCMOS/DMOS Construction
The MIC4451 and MIC4452 CMOS MOSFET drivers
are robust, efficient, and easy to use. The MIC4451 is
• Latch-Up Proof: Fully Isolated Process is
Inherently Immune to Any Latch-Up
an inverting driver, while the MIC4452 is
non-inverting driver.
a
• Input Will Withstand Negative Swing of up to 5V
• Matched Rise and Fall Times: 25 ns
• High Peak Output Current: 12A
Both versions are capable of 12A (peak) output and
can drive the largest MOSFETs with an improved safe
operating margin. The MIC4451/52 accept any logic
input from 2.4V to VS without external speed-up
capacitors or resistor networks. Proprietary circuits
allow the input to swing negative by as much as 5V
without damaging the part. Additional circuits protect
against damage from electrostatic discharge.
• Wide Operating Range: 4.5V to 18V
• High Capacitive Load Drive: 62,000 pF
• Low Delay Time: 30 ns (typ.)
• Logic High Input for Any Voltage from 2.4V to VS
• Low Supply Current 450 µA with Logic 1 Input
• Low Output Impedance: 1.0Ω
MIC4451/52 drivers can replace three or more discrete
components, reducing PCB area requirements,
simplifying product design, and reducing assembly
cost.
• Output Voltage Swing to within 25 mV of GND or
VS
• Low Equivalent Input Capacitance: 7 pF (typ.)
Modern Bipolar/CMOS/DMOS construction ensures
freedom from latch-up. The rail-to-rail swing capability
of CMOS/DMOS ensures adequate gate voltage to the
MOSFET during power up/down sequencing. Because
these devices are fabricated on a self-aligned process,
they have very low crossover current, run cool, use little
power, and are easy to drive.
Applications
• Switch Mode Power Supplies
• Motor Controls
• Pulse Transformer Driver
• Class-D Switching Amplifier
• Line Drivers
• Driving MOSFET or IGBT Parallel Chip Modules
• Local Power ON/OFF Switch
• Pulse Generators
Package Types
MIC4451, MIC4452
5-Lead TO-220 (T)
(Top View)
MIC4451, MIC4452
8-Lead SOIC (M)
8-Lead PDIP (N)
(Top View)
VS
VS
1
8
5 OUT
4 GND
IN 2
7 OUT
3
VS
3
4
6
5
NC
OUT
GND
2 GND
IN
1
GND
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 1
MIC4451/52
Functional Block Diagram
VS
MIC4451
0.3mA
INVERTING
0.1mA
OUT
IN
2k
MIC4452
NONINVERTING
GND
DS20006616A-page 2
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage..........................................................................................................................................................+20V
Input Voltage................................................................................................................................VS + 0.3V to GND – 5V
Input Current (VIN > VS)............................................................................................................................................5 mA
Power Dissipation (TA ≤ 25°C)
PDIP.................................................................................................................................................................960 mW
SOIC ..............................................................................................................................................................1040 mW
TO-220.....................................................................................................................................................................2W
Power Dissipation (TCASE ≤ 25°C)
TO-220................................................................................................................................................................12.5W
Derating Factors (to Ambient)
PDIP.............................................................................................................................................................7.7 mW/°C
SOIC ............................................................................................................................................................8.3 mW/°C
TO-220..........................................................................................................................................................17 mW/°C
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability. Static-sensitive device. Store only in conductive containers. Handling personnel and
equipment should be grounded to prevent damage from static discharge.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: TA = +25°C, with 4.5V ≤ VS ≤ 18V unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Input
Logic 1 Input Voltage
Logic 0 Input Voltage
VIH
VIL
2.4
—
1.3
1.1
—
V
V
—
—
0.8
VS +
0.3
Input Voltage Range
VIN
IIN
–5
—
—
V
—
Input Current
–10
10
µA
0V ≤ VIN ≤ VS
Output
VS –
0.025
High Output Voltage
Low Output Voltage
VOH
VOL
RO
—
—
—
0.025
1.5
V
V
Ω
See Figure 1-1.
—
See Figure 1-1.
Output Resistance,
Output High
—
0.6
IOUT = 10 mA, VS = 18V
Output Resistance,
Output Low
RO
IPK
IDC
—
—
2
0.8
12
—
1.5
—
Ω
A
A
IOUT = 10 mA, VS = 18V
VS = 18V, see Figure 1-3
—
Peak Output Current
Continuous Output
Current
—
Latch-up Protection
Withstand Reverse
Current
IR
>1500
—
—
mA
Duty Cycle ≤ 2%, t ≤ 300 μs
Switching Time (Note 1)
Rise Time
tR
tF
—
—
—
—
20
24
25
40
40
50
50
60
ns
ns
ns
ns
See Figure 1-1. CL = 15,000 pF
See Figure 1-1. CL = 15,000 pF
See Figure 1-1.
Fall Time
Delay Time
tD1
tD2
Delay Time
See Figure 1-1.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 3
MIC4451/52
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: TA = +25°C, with 4.5V ≤ VS ≤ 18V unless otherwise specified.
Parameter
Power Supply
Symbol
Min.
Typ.
Max.
Units
Conditions
—
—
0.4
80
—
1.5
150
18
mA
µA
V
VIN = 3V
VIN = 0V
—
Power Supply Current
IS
Operating Input Voltage
VS
4.5
Note 1: Specification for packaged product only.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Over operating temperature range with 4.5V ≤ VS ≤ 18V unless otherwise specified.
Parameter
Symbol
Min.
Typ.
Max.
Units
Conditions
Input
Logic 1 Input Voltage
Logic 0 Input Voltage
VIH
VIL
2.4
—
—
—
—
V
V
—
—
0.8
VS +
0.3
Input Voltage Range
VIN
IIN
–5
—
—
V
—
Input Current
–10
10
µA
0V ≤ VIN ≤ VS
Output
VS –
0.025
High Output Voltage
Low Output Voltage
VOH
VOL
RO
—
—
—
—
0.025
2.2
V
V
Ω
See Figure 1-1.
—
See Figure 1-1.
Output Resistance,
Output High
—
IOUT = 10 mA, VS = 18V
Output Resistance,
Output Low
RO
—
—
2.2
Ω
IOUT = 10 mA, VS = 18V
Switching Time (Note 1)
Rise Time
tR
tF
—
—
—
—
—
—
—
—
50
60
65
80
ns
ns
ns
ns
See Figure 1-1. CL = 15,000 pF
See Figure 1-1. CL = 15,000 pF
See Figure 1-1.
Fall Time
Delay Time
tD1
tD2
Delay Time
See Figure 1-1.
Power Supply
—
—
—
—
—
3
VIN = 3V
VIN = 0V
—
Power Supply Current
IS
mA
V
0.4
18
Operating Input Voltage
VS
4.5
Note 1: Specification for packaged product only.
DS20006616A-page 4
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters
Temperature Ranges
Sym.
Min.
Typ.
Max.
Units
Conditions
0
—
—
—
—
—
—
+70
+85
°C
°C
°C
°C
°C
°C
Z Ordering Option
Y Ordering Option
V Ordering Option
—
Ambient Operating Temperature Range
TA
–40
–40
–65
—
+125
+150
+150
+300
Storage Temperature Range
Chip Operating Temperature
Lead Temperature
TS
—
—
—
—
Soldering, 10 sec.
Package Thermal Resistance
Thermal Resistance, TO-220 5-Ld
θJC
—
10
—
°C/W
—
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
Test Circuits
FIGURE 1-1:
Inverting Driver Switching
FIGURE 1-2:
Non-Inverting Driver
Time.
Switching Time.
FIGURE 1-3:
Peak Output Current Test Circuit.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 5
MIC4451/52
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
FIGURE 2-4:
Load.
Rise Time vs. Capacitive
Fall Time vs. Capacitive
Crossover Energy vs.
FIGURE 2-1:
Voltage.
Rise Time vs. Supply
Fall Time vs. Supply
Rise and Fall Times vs.
FIGURE 2-5:
Load.
FIGURE 2-2:
Voltage.
FIGURE 2-6:
FIGURE 2-3:
Supply Voltage.
Temperature.
DS20006616A-page 6
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
FIGURE 2-10:
Frequency.
Supply Current vs.
FIGURE 2-7:
Capacitive Load.
Supply Current vs.
Supply Current vs.
Supply Current vs.
FIGURE 2-11:
Frequency.
Supply Current vs.
FIGURE 2-8:
Capacitive Load.
FIGURE 2-12:
Supply Current vs.
FIGURE 2-9:
Frequency.
Capacitive Load.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 7
MIC4451/52
FIGURE 2-13:
vs. Temperature.
Quiescent Supply Current
FIGURE 2-16:
Amplitude.
Propagation Delay vs. Input
Propagation Delay vs. Input
Propagation Delay vs. Input
FIGURE 2-14:
Resistance vs. Supply Voltage.
High-State Output
FIGURE 2-17:
Amplitude.
FIGURE 2-15:
Low-State Output
FIGURE 2-18:
Resistance vs. Supply Voltage.
Temperature.
DS20006616A-page 8
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin Number
TO-220
Pin Number
Pin Name
Description
SOIC/PDIP
1
2, 4
3, TAB
5
2
IN
GND
VS
Control Input.
4, 5
1, 8
6, 7
3
Ground: Duplicate Pins must be externally connected together.
Supply Input: Duplicate pins must be externally connected together.
Output: Duplicate pins must be externally connected together.
Not Connected.
OUT
NC
—
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 9
MIC4451/52
4.3
Input Stage
4.0
4.1
APPLICATIONS INFORMATION
The input voltage level of the MIC4451 changes the
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 320 µA current source
load. With a logic “1” input, the maximum quiescent
supply current is 400 µA. Logic “0” input level signals
reduce quiescent current to 80 µA typical.
Supply Bypassing
Charging and discharging large capacitive loads
quickly requires large currents. For example, changing
a 10,000 pF load to 18V in 50 ns requires 3.6A.
The MIC4451 and MIC4452 have double bonding on
the supply pins, the ground pins, and output pins. This
reduces parasitic lead inductance. Low inductance
enables large currents to be switched rapidly. It also
reduces internal ringing that can cause voltage
breakdown when the driver is operated at or near the
maximum rated voltage.
The MIC4451/52 input is designed to provide 200 mV
of hysteresis. This provides clean transitions, reduces
noise sensitivity, and minimizes output stage current
spiking when changing states. Input voltage threshold
level is approximately 1.5V, making the device
TTL-compatible over the full temperature and operating
supply voltage ranges. Input current is less than
±10 µA.
Internal ringing can also cause output oscillation due to
feedback. This feedback is added to the input signal
because it is referenced to the same ground.
The MIC4451 can be directly driven by the TL494,
SG1526/1527, SG1524, TSC170, MIC38C42, and
similar switch mode power supply integrated circuits.
By offloading the power-driving duties to the
MIC4451/52, the power supply controller can operate
at lower dissipation. This can improve performance and
reliability.
To ensure low supply impedance over a wide frequency
range,
a
parallel capacitor combination is
recommended for supply bypassing. Low inductance
ceramic disc capacitors with short lead lengths
(<0.5 inch) should be used. A 1 µF low ESR film
capacitor in parallel with two 0.1 µF low ESR ceramic
capacitors, (such as AVX RAM GUARD®), provides
adequate bypassing. Connect one ceramic capacitor
directly between pins 1 and 4. Connect the second
ceramic capacitor directly between pins 8 and 5.
The input can be greater than the VS supply, however,
current will flow into the input lead. The input currents
can be as high as 30 mA peak-to-peak (6.4 mARMS
)
with the input. No damage will occur to MIC4451/52,
however, and it will not latch.
The input appears as a 7 pF capacitance and does not
change even if the input is driven from an AC source.
While the device will operate and no damage will occur
up to 25V below the negative rail, input current will
increase up to 1 mA/V due to the clamping action of the
input, ESD diode, and 1 kΩ resistor.
4.2
Grounding
The high current capability of the MIC4451/52
demands careful PC board layout for best
performance. Because the MIC4451 is an inverting
driver, any ground lead impedance will appear as
negative feedback which can degrade switching
speed. Feedback is especially noticeable with slow rise
time inputs. The MIC4451 input structure includes
200 mV of hysteresis to ensure clean transitions and
freedom from oscillation, but attention to layout is still
recommended.
4.4
Power Dissipation
CMOS circuits usually permit the user to ignore power
dissipation. Logic families, such as 4000 and 74C,
have outputs that can only supply a few milliamperes of
current, and even shorting outputs to ground will not
force enough current to destroy the device. The
MIC4451/52 on the other hand, can source or sink
several amperes and drive large capacitive loads at
high frequency. The package power dissipation limit
can easily be exceeded. Therefore, some attention
should be given to power dissipation when driving low
impedance loads and/or operating at high frequency.
Figure 4-1 shows the feedback effect in detail. As the
MIC4451 input begins to go positive, the output goes
negative and several amperes of current flow in the
ground lead. As little as 0.05Ω of PC trace resistance
can produce hundreds of millivolts at the MIC4451
ground pins. If the driving logic is referenced to power
ground, the effective logic input level is reduced and
oscillation may result.
To ensure optimum performance, separate ground
traces should be provided for the logic and power
connections. Connecting the logic ground directly to
the MIC4451 GND pins will ensure full logic drive to the
input and ensure fast output switching. Both of the
MIC4451 GND pins should, however, still be connected
to power ground.
DS20006616A-page 10
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
4.6
Capacitive Load Power
Dissipation
Dissipation caused by a capacitive load is simply the
energy placed in, or removed from, the load
capacitance by the driver. The energy stored in a
capacitor is described by the equation:
EQUATION 4-2:
1
2
2
--
E = C V
FIGURE 4-1:
Switching Time Degradation
Due to Negative Feedback.
TABLE 4-1:
MIC4451 MAX. OPERATION
FREQUENCY
The supply current vs. frequency and supply current vs
capacitive load characteristic curves aid in determining
power dissipation calculations. Table 4-1 lists the
maximum safe operating frequency for several power
supply voltages when driving a 10,000 pF load. More
accurate power dissipation figures can be obtained by
summing the three dissipation sources.
VS
Max. Frequency
18V
15V
10V
5V
220 kHz
300 kHz
640 kHz
2 MHz
Given the power dissipation in the device and the
thermal resistance of the package, junction operating
temperature for any ambient is easy to calculate. For
example, the thermal resistance of the 8-lead plastic
DIP package, from the data sheet, is 130°C/W. In a
25°C ambient, then, using a maximum junction
temperature of 125°C, this package will dissipate
960 mW.
Because this energy is lost in the driver each time the
load is charged or discharged, the “1/2” is removed for
power dissipation calculations. This equation also
shows that it is good practice not to place more voltage
on the capacitor than is necessary, as dissipation
increases as the square of the voltage applied to the
capacitor. For a driver with a capacitive load:
Accurate power dissipation numbers can be obtained
by summing the three sources of power dissipation in
the device:
EQUATION 4-3:
• Load Power Dissipation (PL)
PL = f C VS2
• Quiescent power dissipation (PQ)
• Transition power dissipation (PT)
Where:
Calculation of load power dissipation differs depending
on whether the load is capacitive, resistive or inductive.
f = Operating frequency.
C = Load capacitance.
VS = Driver supply voltage.
4.5
Resistive Load Power Dissipation
Dissipation caused by a resistive load can be
calculated as:
4.7
Inductive Load Power Dissipation
For inductive loads, the situation is more complicated.
For the part of the cycle in which the driver is actively
forcing current into the inductor, the situation is the
same as it is in the resistive case:
EQUATION 4-1:
PL = I2 RO D
EQUATION 4-4:
Where:
I = The current drawn by the load.
RO = The output resistance of the driver when the
output is high, at the power supply voltage used.
D = The fraction of time the load is conducting (duty
cycle).
PL1 = I2 RO D
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 11
MIC4451/52
In this instance, however, the RO required may be
either the ON resistance of the driver when its output is
in the high state, or its ON resistance when the driver is
in the low state, depending on how the inductor is
connected, and this is still only half the story. For the
part of the cycle when the inductor is forcing current
through the driver, dissipation is best described as:
4.9
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state because during the transition, for
a very brief interval, both the N- and P-channel
MOSFETs in the output totem-pole are ON
simultaneously and a current is conducted through
them from VS to ground. The transition power
dissipation is approximately:
EQUATION 4-5:
EQUATION 4-8:
PL2 = I VD 1 – D
Where:
PT = 2 f VS A s
VD = The forward drop of the clamp diode in the driver
(generally around 0.7V).
Where:
(A x s) = A time-current factor derived from Figure 2-6
The two parts of the load dissipation must be summed
in to produce PL:
Total power (PD) then, as previously described is:
EQUATION 4-9:
EQUATION 4-6:
PD = PL + PQ + PT
PL = PL1 + PL2
4.10 Definitions
4.8
Quiescent Power Dissipation
CL = Load Capacitance in Farads.
Quiescent power dissipation (PQ, as described in the
input section) depends on whether the input is high or
low. A low input will result in a maximum current drain
(per driver) of ≤0.2 mA; a logic high will result in a
current drain of ≤3.0 mA. Quiescent power can
therefore be derived from:
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz
IH = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
IL = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
EQUATION 4-7:
ID = Output current from a driver in Amps.
PD = Total power dissipated in a driver in Watts.
PQ = VS D IH + 1 – D IL
PL = Power dissipated in the driver due to the driver’s
load in Watts.
Where:
IH = Quiescent current with input high.
IL = Quiescent current with input low.
D = Fraction of time the input is high (duty cycle).
VS = Power supply voltage.
PQ = Power dissipated in a quiescent driver in Watts.
PT = Power dissipated in a driver when the output
changes states (shoot-through current) in watts.
RO = Output resistance of a driver in Ohms.
VS = Power supply voltage to the IC in volts.
DS20006616A-page 12
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
8-Lead SOIC*
Example
XXX
XXXXXX
WNNN
MIC
4451YM
7052
5-Lead TO-220*
Example
8-Lead PDIP*
Example
XXX
XXXXXX
WNNNP
MIC
4452ZT
4126P
XXX
XXXXXX
WNNN
MIC
4451YN
6654
Legend: XX...X Product code or customer-specific information
Y
YY
WW
NNN
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
e
3
*
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
)
e3
●, ▲, ▼ Pin one index is identified by a dot, delta up, or delta down (triangle
mark).
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information. Package may or may not include
the corporate logo.
Underbar (_) and/or Overbar (‾) symbol may not be to scale.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 13
MIC4451/52
8-Lead SOIC Package Outline and Recommended Land Pattern
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
DS20006616A-page 14
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
8-Lead PDIP Package Outline and Recommended Land Pattern
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 15
MIC4451/52
5-Lead TO-220 Package Outline and Recommended Land Pattern
5-Lead Transistor Outline Type LB03 (B8X) - [TO-220]
Micrel Legacy Package TO220-LB03-5LD-PL-1
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
SEATING
PLANE
B
(E1)
(E2)
E
A
E
2
A1
A
Q
1
ØP
(D2)
D
D1
L
1
2
1
2
3
4
5
c
e
A2
5X b
0.15
B A
TOP VIEW
SIDE VIEW
BOTTOM VIEW
2
END VIEW
Microchip Technology Drawing C04-036 Rev D Sheet 1 of 2
DS20006616A-page 16
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
5-Lead Transistor Outline Type LB03 (B8X) - [TO-220]
Micrel Legacy Package TO220-LB03-5LD-PL-1
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
INCHES
Nom
Dimension Limits
Min
Max
Number of Leads
Pitch
Overall Height
Tab Height
Seating Plane to Lead
Lead Width
Lead Thickness
Lead Length
N
5
e
.067 BSC
.175
.050
.098
.033
.016
.540
.580
.354
A
A1
A2
b
c
L
D
D1
E
.160
.045
.080
.025
.012
.500
.542
.348
.380
.190
.055
.115
.040
.020
.580
.619
.360
.420
Total Body Length Including Tab
Molded Body Length
Total Width
.400
Pad Width
Pad Length
Hole Diameter
Hole Center to Tab Edge
Molded Body Draft Angle
Molded Body Draft Angle
E1
D2
ØP
Q
1
2
0.256 REF
0.486 REF
.151
.146
.103
3
.156
.113
10
.108
7
4
1
7
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Microchip Technology Drawing C04-036 Rev D Sheet 2 of 2
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 17
MIC4451/52
NOTES:
DS20006616A-page 18
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
APPENDIX A: REVISION HISTORY
Revision A (November 2021)
• Converted Micrel document MIC4451/52 to Micro-
chip data sheet DS20006616A.
• Minor text changes throughout.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 19
MIC4451/52
NOTES:
DS20006616A-page 20
2021 Microchip Technology Inc. and its subsidiaries
MIC4451/52
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office.
Examples:
PART No.
X
X
-XX
a) MIC4451YN:
b) MIC4451YM:
c) MIC4451YM-TR:
d) MIC4451ZT:
MIC4451, –40°C to +85°C
Temperature Range,
Device
Junction Temp. Range
Package
Media Type
8-Lead PDIP, 50/Tube
MIC4451, –40°C to +85°C
Temperature Range,
MIC4451:
MIC4452:
Inverting 12A Peak Low-Side MOSFET
Driver
Non-Inverting 12A Peak Low-Side MOS-
8-Lead SOIC, 95/Tube
Device:
MIC4451, –40°C to +85°C
Temperature Range,
FET Driver
8-Lead SOIC, 2,500/Reel
Junction
Temperature
Range:
V
Y
Z
=
=
=
–40°C to +125°C (MIC4452 Only)
–40°C to +85°C
0°C to +70°C
MIC4451, 0°C to +70°C
Temperature Range,
5-Lead TO-220, 50/Tube
e) MIC4452YN:
f) MIC4452YM:
g) MIC4452YM-TR:
h) MIC4452ZT:
MIC4452, –40°C to +85°C
Temperature Range,
M
N
T
=
=
=
8-Lead SOIC
8-Lead PDIP
5-Lead TO-220
Package:
8-Lead PDIP, 50/Tube
MIC4452, –40°C to +85°C
Temperature Range,
<blank> = 50/Tube (TO-220 and PDIP Only)
<blank> = 95/Tube (SOIC Only)
TR
Media Type:
8-Lead SOIC, 95/Tube
= 2,500/Reel (SOIC Only)
MIC4452, –40°C to +85°C
Temperature Range,
8-Lead SOIC, 2,500/Reel
MIC4452, 0°C to +70°C
Temperature Range,
5-Lead TO-220, 50/Tube
i) MIC4452VM:
j) MIC4452VM-TR:
MIC4452, –40°C to +125°C
Temperature Range,
8-Lead SOIC, 95/Tube
MIC4452, –40°C to +125°C
Temperature Range,
8-Lead SOIC, 2,500/Reel
Note 1:
Tape and Reel identifier only appears in the
catalog part number description. This identifier is
used for ordering purposes and is not printed on
the device package. Check with your Microchip
Sales Office for package availability with the
Tape and Reel option.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 21
MIC4451/52
NOTES:
DS20006616A-page 22
2021 Microchip Technology Inc. and its subsidiaries
Note the following details of the code protection feature on Microchip products:
•
Microchip products meet the specifications contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is secure when used in the intended manner, within operating specifications, and
under normal conditions.
•
•
Microchip values and aggressively protects its intellectual property rights. Attempts to breach the code protection features of
Microchip product is strictly prohibited and may violate the Digital Millennium Copyright Act.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of its code. Code protection does not
mean that we are guaranteeing the product is “unbreakable”. Code protection is constantly evolving. Microchip is committed to
continuously improving the code protection features of our products.
This publication and the information herein may be used only
with Microchip products, including to design, test, and integrate
Microchip products with your application. Use of this informa-
tion in any other manner violates these terms. Information
regarding device applications is provided only for your conve-
nience and may be superseded by updates. It is your responsi-
bility to ensure that your application meets with your
specifications. Contact your local Microchip sales office for
additional support or, obtain additional support at https://
www.microchip.com/en-us/support/design-help/client-support-
services.
Trademarks
The Microchip name and logo, the Microchip logo, Adaptec,
AnyRate, AVR, AVR logo, AVR Freaks, BesTime, BitCloud,
CryptoMemory, CryptoRF, dsPIC, flexPWR, HELDO, IGLOO,
JukeBlox, KeeLoq, Kleer, LANCheck, LinkMD, maXStylus,
maXTouch, MediaLB, megaAVR, Microsemi, Microsemi logo,
MOST, MOST logo, MPLAB, OptoLyzer, PIC, picoPower,
PICSTART, PIC32 logo, PolarFire, Prochip Designer, QTouch,
SAM-BA, SenGenuity, SpyNIC, SST, SST Logo, SuperFlash,
Symmetricom, SyncServer, Tachyon, TimeSource, tinyAVR, UNI/O,
Vectron, and XMEGA are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
AgileSwitch, APT, ClockWorks, The Embedded Control Solutions
Company, EtherSynch, Flashtec, Hyper Speed Control, HyperLight
Load, IntelliMOS, Libero, motorBench, mTouch, Powermite 3,
Precision Edge, ProASIC, ProASIC Plus, ProASIC Plus logo, Quiet-
Wire, SmartFusion, SyncWorld, Temux, TimeCesium, TimeHub,
TimePictra, TimeProvider, TrueTime, WinPath, and ZL are
registered trademarks of Microchip Technology Incorporated in the
U.S.A.
THIS INFORMATION IS PROVIDED BY MICROCHIP "AS IS".
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-
RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION INCLUDING BUT NOT
LIMITED TO ANY IMPLIED WARRANTIES OF NON-
INFRINGEMENT, MERCHANTABILITY, AND FITNESS FOR A
PARTICULAR PURPOSE, OR WARRANTIES RELATED TO
ITS CONDITION, QUALITY, OR PERFORMANCE.
Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any
Capacitor, AnyIn, AnyOut, Augmented Switching, BlueSky,
BodyCom, CodeGuard, CryptoAuthentication, CryptoAutomotive,
CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net,
Dynamic Average Matching, DAM, ECAN, Espresso T1S,
EtherGREEN, GridTime, IdealBridge, In-Circuit Serial
Programming, ICSP, INICnet, Intelligent Paralleling, Inter-Chip
Connectivity, JitterBlocker, Knob-on-Display, maxCrypto, maxView,
memBrain, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, NVM Express, NVMe,
Omniscient Code Generation, PICDEM, PICDEM.net, PICkit,
PICtail, PowerSmart, PureSilicon, QMatrix, REAL ICE, Ripple
Blocker, RTAX, RTG4, SAM-ICE, Serial Quad I/O, simpleMAP,
SimpliPHY, SmartBuffer, SmartHLS, SMART-I.S., storClad, SQI,
SuperSwitcher, SuperSwitcher II, Switchtec, SynchroPHY, Total
Endurance, TSHARC, USBCheck, VariSense, VectorBlox, VeriPHY,
ViewSpan, WiperLock, XpressConnect, and ZENA are trademarks
of Microchip Technology Incorporated in the U.S.A. and other
countries.
IN NO EVENT WILL MICROCHIP BE LIABLE FOR ANY INDI-
RECT, SPECIAL, PUNITIVE, INCIDENTAL, OR CONSE-
QUENTIAL LOSS, DAMAGE, COST, OR EXPENSE OF ANY
KIND WHATSOEVER RELATED TO THE INFORMATION OR
ITS USE, HOWEVER CAUSED, EVEN IF MICROCHIP HAS
BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES
ARE FORESEEABLE. TO THE FULLEST EXTENT
ALLOWED BY LAW, MICROCHIP'S TOTAL LIABILITY ON
ALL CLAIMS IN ANY WAY RELATED TO THE INFORMATION
OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF
ANY, THAT YOU HAVE PAID DIRECTLY TO MICROCHIP
FOR THE INFORMATION.
Use of Microchip devices in life support and/or safety applica-
tions is entirely at the buyer's risk, and the buyer agrees to
defend, indemnify and hold harmless Microchip from any and
all damages, claims, suits, or expenses resulting from such
use. No licenses are conveyed, implicitly or otherwise, under
any Microchip intellectual property rights unless otherwise
stated.
SQTP is a service mark of Microchip Technology Incorporated in
the U.S.A.
The Adaptec logo, Frequency on Demand, Silicon Storage
Technology, Symmcom, and Trusted Time are registered
trademarks of Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology Germany
II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in
other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2021, Microchip Technology Incorporated and its subsidiaries.
All Rights Reserved.
ISBN: 978-1-5224-9296-2
For information regarding Microchip’s Quality Management Systems,
please visit www.microchip.com/quality.
2021 Microchip Technology Inc. and its subsidiaries
DS20006616A-page 23
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Australia - Sydney
Tel: 61-2-9868-6733
India - Bangalore
Tel: 91-80-3090-4444
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
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Tel: 86-10-8569-7000
India - New Delhi
Tel: 91-11-4160-8631
Denmark - Copenhagen
Tel: 45-4485-5910
Fax: 45-4485-2829
China - Chengdu
Tel: 86-28-8665-5511
India - Pune
Tel: 91-20-4121-0141
Finland - Espoo
Tel: 358-9-4520-820
China - Chongqing
Tel: 86-23-8980-9588
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Tel: 81-6-6152-7160
Web Address:
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Tel: 678-957-9614
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Tel: 905-695-1980
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DS20006616A-page 24
2021 Microchip Technology Inc. and its subsidiaries
09/14/21
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