MIC94001BLMT&R [MICROCHIP]
Small Signal Field-Effect Transistor, 1.6A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LM, SOIC-8;
| 型号： | MIC94001BLMT&R |
| 厂家： | 
MICROCHIP |
| 描述： | Small Signal Field-Effect Transistor, 1.6A I(D), 15V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LM, SOIC-8 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC94001
P-Channel MOSFET
Not Recommended for New Designs
General Description
Features
The MIC94001 is a silicon gate P-channel MOSFET de-
signed for low on-resistance, high-side switch applications.
• 15V minimum drain-to-source breakdown
• 0.4Ω maximum on-resistance at
4.5V gate-to-source
• Functional at 2.7V gate-to-source
• 0.063" maximum height
TheMIC94001hasamaximumon-resistanceof0.4Ωat4.5V
gate-to-source voltage.
Improved ESD protection is provided by the gate protection
network shown in the schematic diagram.
Applications
The MIC94001 is supplied in a low-profile version of the
8-lead SOIC package.
• High-side switch
• Power management
• Stepper motor control
The MIC94001 die can be assembled in a 4-terminal configu-
rationwiththebodynotshortedtothesourceforuseinanalog
switchapplications. Contactthefactoryformoreinformation.
• 1.8" PCMCIA disk-drive V switch
CC
Ordering Information
Part Number
Temperature Range*
Package
MIC94001BLM
–55°C to +150°C
8-lead SOIC†
* Operating Junction Temperature
†
Low Profile Leads, see Package Information
Schematic Information
Pin Configuration
Source
Gate
1
2
NC
Source Drain 7
Source Drain
Drain 8
Drain
6
3
4
6
Schematic Symbol
Gate Drain 5
S
8-lead Low-Profile SOIC
Package (LM)
G
D
Schematic Diagram
Typical Application
Package Information
0.026 (0.65)
MAX)
Pin 1
MIC94001
+5V
0.154 (3.90)
On
Off
74HC04
0.193 (4.90)
0.050 (1.27) 0.016 (0.40)
45°
TYP
TYP
Power Switch Application
3°–6°
0.063 (1.60) MAX
0.197 (5.0)
0.189 (4.8)
0.244 (6.20)
0.228 (5.80)
SEATING
PLANE
0.057 (1.45)
0.049 (1.25)
Patent 5,355,008
August 1998
6-37
MIC94001
Micrel
Absolute Maximum Ratings
Voltageandcurrentvaluesarenegative. Signsnotshownforclarity.
Drain-to-Source Voltage................................................15V
Gate-to-Source Voltage ................................................15V
Continuous Drain Current
Total Power Dissipation
T = 25°C ...................................................................1W
A
T = 100°C ..............................................................0.4W
A
Thermal Resistance
θ
θ
...................................................................................... 125°C/W
........................................................................................ 76°C/W
JA
JC
T = 25°C .................................................................1.6A
A
T = 100°C ..................................................................1A
A
Lead Temperature
Operating Juction Temperature ................. –55°C to +150°
Storage Temperature ............................... –55°C to +150°C
1/16" from case, 10s ........................................... +300°C
Electrical Characteristics TA = 25°C unless noted. All values are negative. Signs not shown for clarity.
Symbol
VBDSS
VGS
Parameter
Condition
Min
15
1
Typ
Max
Units
V
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA
Gate Threshold Voltage
Gate-Body Leakage
VDS = VGS, ID = 250µA
3
V
IGSS
VDS = 0V, VGS = 15V, Note 2
VDS = 15V, VGS = 0V
100
25
nA
µA
µA
A
IDSS
Zero Gate Voltage Drain Current
VDS = 15V, VGS = 0V, TJ = 125°C
250
ID(ON)
RDS(ON)
gFS
On-State Drain Current
VDS ≥ 10V, VGS = 10V, Note 1
5.5
0.35
0.7
Drain-Source On-State Resist.
Forward Transconductance
VGS = 4.5V, ID = 50mA
0.40
Ω
VDS = 15V, ID = 1A, Note 1
S
Note 1: Pulse Test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2%
Note 2: ESD gate protection diode conducts during positive gate-to-source voltage excursions.
On Resistance vs.
Drain Current
Drain Characteristics
VGS = 4.0
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
2000
1800
1600
1400
1200
1000
800
VGS = 3.5
VGS = 4.5V
VGS = 3.0
VGS = 2.5
VGS = 10V
VGS = 2.0
VGS = 1.5
600
400
200
0
0.0
0.4
0.8
I
1.2
(A)
1.6
2.0
0.0 2.5 5.0 7.5 10.0 12.5 15.0
Note 1
Note 1
V (V)
DS
D
6-38
August 1998
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