T2525S738C-DDW [MICROCHIP]

Telecom Circuit, 1-Func, WAFER-10;
T2525S738C-DDW
型号: T2525S738C-DDW
厂家: MICROCHIP    MICROCHIP
描述:

Telecom Circuit, 1-Func, WAFER-10

文件: 总11页 (文件大小:524K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
T2525  
IR Receiver ASSP  
DATASHEET  
Features  
No external components except PIN diode  
Supply-voltage range: 4.5V to 5.5V  
Highest sensitivity due to automatic sensitivity adaption (AGC) and automatic  
strong signal adaption (ATC)  
Highest immunity against disturbances from daylight and lamps  
Available for carrier frequencies between 30kHz to 56kHz; adjusted by zener diode  
fusing  
TTL and CMOS compatible  
Suitable minimum burst length 10 pulses/burst  
Applications  
Home entertainment applications (audio/video)  
Home appliances  
Remote control equipment  
4657I-AUTO-04/14  
1.  
Description  
The Atmel® IC T2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-  
frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise  
from daylight and lamps. The T2525 is available with broadest range of carrier frequencies (30, 33, 36, 37, 38, 40, 44,  
56kHz) and 3 different noise suppression regulation types (standard, lamp, short burst) covering requirements of high-end  
remote control solutions (please refer to selection guide available for T2525/T2526). The T2525 operates in a supply voltage  
range of 4.5V to 5.5V.  
The function of T2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two  
main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are  
transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a  
Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency  
f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst  
signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be  
suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a  
function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to  
adapt to the current application to secure best transmission quality.  
Figure 1-1. Block Diagram  
VS  
IN  
OUT  
Micro-  
controller  
CGA and  
filter  
Input  
Demodulator  
AGC/ATC  
and digital control  
Oscillator  
Carrier frequency f0  
T2525  
Modulated IR signal  
min 6 or 10 pulses  
GND  
2.  
Pin Description  
Table 2-1. Pin Description  
Symbol  
VS  
Function  
Supply voltage  
Data output  
Input PIN diode  
Ground  
OUT  
IN  
GND  
2
T2525 [DATASHEET]  
4657I–AUTO–04/14  
3.  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  
Parameters  
Symbol  
VS  
Value  
–0.3 to +6  
3
Unit  
V
Supply voltage  
Supply current  
IS  
mA  
V
Input voltage  
VIN  
IIN  
–0.3 to VS  
0.75  
Input DC current at VS = 5V  
Output voltage  
mA  
V
VO  
–0.3 to VS  
10  
Output current  
IO  
mA  
°C  
Operating temperature  
Storage temperature  
Power dissipation at Tamb = 25°C  
Tamb  
Tstg  
Ptot  
–25 to +85  
–40 to +125  
°C  
mW  
30  
4.  
Electrical Characteristics  
Tamb = 25°C, VS = 5V unless otherwise specified.  
No. Parameters  
Supply  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
1
1.1 Supply-voltage range  
1.2 Supply current  
VS  
IS  
4.5  
0.8  
5
5.5  
1.4  
V
C
B
IIN = 0  
1.1  
mA  
2
Output  
Tamb = 25°C;  
see Figure 5-7 on page 7  
2.1 Internal pull-up resistor(1)  
RPU  
30/40  
k  
A
IL = 2mA;  
see Figure 5-7 on page 7  
2.2 Output voltage low  
2.3 Output voltage high  
2.4 Output current clamping  
VOL  
VOH  
IOCL  
250  
Vs  
mV  
V
B
B
B
VS – 0.25  
R2 = 0;  
see Figure 5-7 on page 7  
8
mA  
3
Input  
VIN = 0;  
see Figure 5-7 on page 7  
3.1 Input DC current  
IIN_DCMAX  
IIN_DCMAX  
–85  
µA  
µA  
C
B
Input DC current; Figure VIN = 0; Vs = 5V,  
3.2  
–530  
–960  
5-2 on page 5  
Tamb = 25°C  
Test signal:  
see Figure 5-6 on page 7  
VS = 5V,  
Tamb = 25°C,  
IIN_DC = 1µA;  
square pp,  
burst N = 16,  
Minimum detection  
3.3 threshold current; Figure  
5-1 on page 5  
IEemin  
–500  
pA  
B
f = f0; tPER = 10ms,  
Figure 5-6 on page 7;  
BER = 50(2)  
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
Notes: 1. Depending on version, see “Ordering Information”  
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT  
3. After transformation of input current into voltage  
T2525 [DATASHEET]  
3
4657I–AUTO–04/14  
4.  
Electrical Characteristics (Continued)  
Tamb = 25°C, VS = 5V unless otherwise specified.  
No. Parameters  
Test Conditions  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Type*  
Test signal:  
see Figure 5-6 on page 7  
VS = 5V,  
Tamb = 25°C,  
IIN_DC = 1µA,  
square pp,  
Minimum detection  
threshold current with AC  
3.4 current disturbance  
IIN_AC100 = 3µA at  
100Hz  
IEemin  
–750  
pA  
C
burst N = 16,  
f = f0; tPER = 10ms, Figure  
5-6 on page 7;  
BER = 50%(2)  
Test signal:  
see Figure 5-6 on page 7  
VS = 5V, Tamb = 25°C,  
Maximum detection  
IIN_DC = 1µA;  
3.5 threshold current with VIN square pp,  
IEemax  
–400  
µA  
D
> 0V  
burst N = 16,  
f = f0; tPER = 10ms, Figure  
5-6 on page 7;  
BER = 5%(2)  
4
Controlled Amplifier and Filter  
Maximum value of  
variable gain (CGA)  
4.1  
GVARMAX  
GVARMIN  
GMAX  
f0_FUSE  
f0  
51  
–5  
71  
f0  
dB  
dB  
dB  
%
D
D
D
A
C
C
C
Minimum value of  
variable gain (CGA)  
4.2  
4.3  
4.4  
4.5  
Total internal  
amplification(3)  
Center frequency fusing  
accuracy of bandpass  
VS = 5V, Tamb = 25°C  
–3  
+3  
Overall accuracy center  
f r e q u e n c y o f b a n d p a s s  
–6.7  
f0  
+4.1  
%
BPF bandwidth:  
type N0 - N3  
–3 dB; f0 = 38kHz; see  
Figure 5-4 on page 6  
B
3.5  
5.4  
kHz  
kHz  
4.6  
BPF bandwidth:  
type N6, N7  
–3 dB; f0 = 38kHz  
Figure 5-4 on page 6  
B
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter  
Notes: 1. Depending on version, see “Ordering Information”  
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT  
3. After transformation of input current into voltage  
4.1  
4.2  
ESD  
All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7  
Reliability  
Electrical qualification (1000h) in molded SO8 plastic package  
4
T2525 [DATASHEET]  
4657I–AUTO–04/14  
5.  
Typical Electrical Curves at Tamb = 25°C  
Figure 5-1. IEemin versus IIN_DC, VS = 5V  
100  
10  
0.96  
1
0.52  
0
0.1  
1.0  
10.0  
IIN_DC (µA)  
100.0  
1000.0  
Figure 5-2. VIN versus IIN_DC, VS = 5V  
3
2.94  
2.79  
2.44  
2
1
1.14  
0
0.0  
0.1  
1.0  
10.0  
100.0  
1000.0  
IIN_DC (µA)  
Figure 5-3. Data Transmission Rate, VS = 5V  
5000  
4000  
3000  
2000  
1000  
Short burst type  
Standard type  
Lamp type  
0
25  
35  
45  
55  
65  
f0 (kHZ)  
T2525 [DATASHEET]  
5
4657I–AUTO–04/14  
Figure 5-4. Typical Bandpass Curve  
1.1  
1.0  
0.9  
0.8  
-3dB  
-3dB  
0.7  
0.6  
0.5  
Δf  
0.4  
0.92  
0.94  
0.96  
0.98  
1.00  
1.02  
1.04  
1.06  
1.08  
f/f0  
Q = f0/f; f = -3 dB values. Example: Q = 1/(1.047 – 0.954) = 11  
Figure 5-5. Illustration of Used Terms  
1066μs  
Period (P = 16)  
533μs  
7
Burst (N = 16 pulses)  
IN  
1
16  
7
7
33μs  
tDON  
tDOFF  
Envelope 1  
533μs  
OUT  
Envelope 16  
17056μs/data word  
OUT  
Telegram pause  
Data word  
17ms  
Data word  
t
TREP = 62ms  
Example: f = 30kHz, burst with 16 pulses, 26 periods  
Example: f = 30kHz, burst with 16 pulses, 16 periods  
6
T2525 [DATASHEET]  
4657I–AUTO–04/14  
Figure 5-6. Test Circuit  
I
Ee = ΔU1/400kΩ  
V
DD = 5V  
ΔU1  
400kΩ  
1nF  
IIN_DC  
R1 = 220Ω  
VS  
IIN  
20kΩ  
1nF  
IN  
T2525  
OUT  
IEe  
VPULSE  
GND  
ΔU2  
+
C1  
IIN_DC = ΔU2/40kΩ  
20kΩ  
f0  
4.7μF  
16  
-
IIN_AC100  
DC  
+
tPER = 10ms  
Figure 5-7. Application Circuit  
(1) optional  
VDD = 5V  
R1 = 220Ω  
R2(1) > 2.4kΩ  
RPU  
IS  
VS  
IOCL  
IL  
IN  
T2525  
Microcontroller  
IIN  
OUT  
GND  
VIN  
VO  
+
IIN_DC IEe  
C
1 = 4.7μF  
C2(1) = 470pF  
T2525 [DATASHEET]  
7
4657I–AUTO–04/14  
6.  
Chip Dimensions  
Figure 6-1. Chip Size in µm  
1130,1030  
GND  
351,904  
IN  
723,885  
scribe  
VS  
63,660  
T2525  
63,70  
Fusing  
OUT  
0,0  
width  
Note:  
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0  
Dimensions  
Length inclusive scribe  
Width inclusive scribe  
Thickness  
1.15mm  
1.29mm  
290µ ±5%  
90µ 90µ  
70µ 70µ  
AlCu/AlSiTi(1)  
0.8µm  
Pads  
Fusing pads  
Material  
Pad metallurgy  
Finish  
Thickness  
Material  
Si3N4/SiO2  
0.7/0.3µm  
Thickness  
Note:  
Value depends on manufacture location.  
8
T2525 [DATASHEET]  
4657I–AUTO–04/14  
7.  
Ordering Information  
Delivering: unsawn wafers (DDW) in box.  
(3)  
Extended Type Number  
T2525S0xx(1)C-DDW  
T2525S1xx(1)C-DDW  
PL(2)  
RPU  
D(4)  
Type(5)  
2
1
30  
30  
2090  
2090  
Standard type: 10 pulses, enhanced sensibility, high data rate  
Standard type: 10 pulses, enhanced sensibility, high data rate  
Lamp type: 10 pulses, enhanced suppression of disturbances,  
secure data transmission  
T2525S2xx(1)C-DDW  
T2525S3xx(1)C-DDW  
2
1
40  
40  
1373  
1373  
Lamp type: 10 pulses, enhanced suppression of disturbances,  
secure data transmission  
T2525S6xx(1)C-DDW  
T2525S7xx(1)C-DDW  
2
1
30  
30  
3415  
3415  
Short burst type: 6 pulses, enhanced data rate  
Short burst type: 6 pulses, enhanced data rate  
Notes: 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44, 56 kHz.  
2. Two pad layout versions (see Figure 8-1 and Figure 8-2) available for different assembly demand  
3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”)  
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5V (see Figure 5-3 on page 5)  
5. On request: noise type, data rate type  
8.  
Pad Layout  
Figure 8-1. Pad Layout 1  
GND  
IN  
OUT  
VS  
T2525  
Fusing  
Figure 8-2. Pad Layout 2  
(6)  
(5)  
GND  
IN  
(1)  
(3)  
VS  
T2525  
OUT  
Fusing  
T2525 [DATASHEET]  
9
4657I–AUTO–04/14  
9.  
Revision History  
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this  
document.  
Revision No.  
History  
4657I-AUTO-04/14  
Put datasheet in the latest template  
Features on page 1 changed  
Section 1 “Description” on page 1 changed  
Section 2 “Pin Description” on page 3 changed  
Section 4 “Thermal Resistance” on page 3 deleted  
Section 4 “Electrical Characteristics” on pages 4 to 5 changed  
Figure 5-3 “Data Transmission Rate, VS = 5V” on page 6 changed  
Put datasheet in the latest template  
4657H-AUTO-05/10  
4657G-AUTO-09/09  
4657F-AUTO-10/06  
4657E-AUTO-04/06  
Ordering Information table changed  
Features on page 1 changed  
Applications on page 1 changed  
Section 1 “Description” on page 1 changed  
Section 5 “Electrical Characteristics” number 3.3 and 3.4 on page 4 changed  
Section 8 “Ordering Information” on page 10 changed  
Section 9 “Pad Layout” on page 10 changed  
Put datasheet in the latest template  
Section 8 “Ordering Information” on page 10 changed  
10  
T2525 [DATASHEET]  
4657I–AUTO–04/14  
X
X X X X  
X
Atmel Corporation  
1600 Technology Drive, San Jose, CA 95110 USA  
T: (+1)(408) 441.0311  
F: (+1)(408) 436.4200  
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www.atmel.com  
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