T2525S738C-DDW [MICROCHIP]
Telecom Circuit, 1-Func, WAFER-10;
| 型号： | T2525S738C-DDW |
| 厂家： | 
MICROCHIP |
| 描述： | Telecom Circuit, 1-Func, WAFER-10 |
| 文件： | 总11页 (文件大小：524K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T2525
IR Receiver ASSP
DATASHEET
Features
● No external components except PIN diode
● Supply-voltage range: 4.5V to 5.5V
● Highest sensitivity due to automatic sensitivity adaption (AGC) and automatic
strong signal adaption (ATC)
● Highest immunity against disturbances from daylight and lamps
● Available for carrier frequencies between 30kHz to 56kHz; adjusted by zener diode
fusing
● TTL and CMOS compatible
● Suitable minimum burst length ≥ 10 pulses/burst
Applications
● Home entertainment applications (audio/video)
● Home appliances
● Remote control equipment
4657I-AUTO-04/14
1.
Description
The Atmel® IC T2525 is a complete IR receiver for data communication that was developed and optimized for use in carrier-
frequency-modulated transmission applications. The IC offers highest sensitivity as well as highest suppression of noise
from daylight and lamps. The T2525 is available with broadest range of carrier frequencies (30, 33, 36, 37, 38, 40, 44,
56kHz) and 3 different noise suppression regulation types (standard, lamp, short burst) covering requirements of high-end
remote control solutions (please refer to selection guide available for T2525/T2526). The T2525 operates in a supply voltage
range of 4.5V to 5.5V.
The function of T2525 can be described using the block diagram (see Figure 1-1 on page 2). The input stage meets two
main functions. First, it provides a suitable bias voltage for the PIN diode. Secondly, the pulsed photo-current signals are
transformed into a voltage by a special circuit which is optimized for low-noise applications. After amplification by a
Controlled Gain Amplifier (CGA), the signals have to pass a tuned integrated narrow bandpass filter with a center frequency
f0 which is equivalent to the chosen carrier frequency of the input signal. The demodulator is used to convert the input burst
signal into a digital envelope output pulse and to evaluate the signal information quality, i.e., unwanted pulses will be
suppressed at the output pin. All this is done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental condition (ambient light, modulated lamps etc.). Other special features are used to
adapt to the current application to secure best transmission quality.
Figure 1-1. Block Diagram
VS
IN
OUT
Micro-
controller
CGA and
filter
Input
Demodulator
AGC/ATC
and digital control
Oscillator
Carrier frequency f0
T2525
Modulated IR signal
min 6 or 10 pulses
GND
2.
Pin Description
Table 2-1. Pin Description
Symbol
VS
Function
Supply voltage
Data output
Input PIN diode
Ground
OUT
IN
GND
2
T2525 [DATASHEET]
4657I–AUTO–04/14
3.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
VS
Value
–0.3 to +6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
–0.3 to VS
0.75
Input DC current at VS = 5V
Output voltage
mA
V
VO
–0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
–25 to +85
–40 to +125
°C
mW
30
4.
Electrical Characteristics
Tamb = 25°C, VS = 5V unless otherwise specified.
No. Parameters
Supply
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
1
1.1 Supply-voltage range
1.2 Supply current
VS
IS
4.5
0.8
5
5.5
1.4
V
C
B
IIN = 0
1.1
mA
2
Output
Tamb = 25°C;
see Figure 5-7 on page 7
2.1 Internal pull-up resistor(1)
RPU
30/40
k
A
IL = 2mA;
see Figure 5-7 on page 7
2.2 Output voltage low
2.3 Output voltage high
2.4 Output current clamping
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
VS – 0.25
R2 = 0;
see Figure 5-7 on page 7
8
mA
3
Input
VIN = 0;
see Figure 5-7 on page 7
3.1 Input DC current
IIN_DCMAX
IIN_DCMAX
–85
µA
µA
C
B
Input DC current; Figure VIN = 0; Vs = 5V,
3.2
–530
–960
5-2 on page 5
Tamb = 25°C
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1µA;
square pp,
burst N = 16,
Minimum detection
3.3 threshold current; Figure
5-1 on page 5
IEemin
–500
pA
B
f = f0; tPER = 10ms,
Figure 5-6 on page 7;
BER = 50(2)
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
T2525 [DATASHEET]
3
4657I–AUTO–04/14
4.
Electrical Characteristics (Continued)
Tamb = 25°C, VS = 5V unless otherwise specified.
No. Parameters
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Type*
Test signal:
see Figure 5-6 on page 7
VS = 5V,
Tamb = 25°C,
IIN_DC = 1µA,
square pp,
Minimum detection
threshold current with AC
3.4 current disturbance
IIN_AC100 = 3µA at
100Hz
IEemin
–750
pA
C
burst N = 16,
f = f0; tPER = 10ms, Figure
5-6 on page 7;
BER = 50%(2)
Test signal:
see Figure 5-6 on page 7
VS = 5V, Tamb = 25°C,
Maximum detection
IIN_DC = 1µA;
3.5 threshold current with VIN square pp,
IEemax
–400
µA
D
> 0V
burst N = 16,
f = f0; tPER = 10ms, Figure
5-6 on page 7;
BER = 5%(2)
4
Controlled Amplifier and Filter
Maximum value of
variable gain (CGA)
4.1
GVARMAX
GVARMIN
GMAX
f0_FUSE
f0
51
–5
71
f0
dB
dB
dB
%
D
D
D
A
C
C
C
Minimum value of
variable gain (CGA)
4.2
4.3
4.4
4.5
Total internal
amplification(3)
Center frequency fusing
accuracy of bandpass
VS = 5V, Tamb = 25°C
–3
+3
Overall accuracy center
f r e q u e n c y o f b a n d p a s s
–6.7
f0
+4.1
%
BPF bandwidth:
type N0 - N3
–3 dB; f0 = 38kHz; see
Figure 5-4 on page 6
B
3.5
5.4
kHz
kHz
4.6
BPF bandwidth:
type N6, N7
–3 dB; f0 = 38kHz
Figure 5-4 on page 6
B
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = Bit Error Rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
3. After transformation of input current into voltage
4.1
4.2
ESD
All pins 2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
Reliability
Electrical qualification (1000h) in molded SO8 plastic package
4
T2525 [DATASHEET]
4657I–AUTO–04/14
5.
Typical Electrical Curves at Tamb = 25°C
Figure 5-1. IEemin versus IIN_DC, VS = 5V
100
10
0.96
1
0.52
0
0.1
1.0
10.0
IIN_DC (µA)
100.0
1000.0
Figure 5-2. VIN versus IIN_DC, VS = 5V
3
2.94
2.79
2.44
2
1
1.14
0
0.0
0.1
1.0
10.0
100.0
1000.0
IIN_DC (µA)
Figure 5-3. Data Transmission Rate, VS = 5V
5000
4000
3000
2000
1000
Short burst type
Standard type
Lamp type
0
25
35
45
55
65
f0 (kHZ)
T2525 [DATASHEET]
5
4657I–AUTO–04/14
Figure 5-4. Typical Bandpass Curve
1.1
1.0
0.9
0.8
-3dB
-3dB
0.7
0.6
0.5
Δf
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f0/f; f = -3 dB values. Example: Q = 1/(1.047 – 0.954) = 11
Figure 5-5. Illustration of Used Terms
1066μs
Period (P = 16)
533μs
7
Burst (N = 16 pulses)
IN
1
16
7
7
33μs
tDON
tDOFF
Envelope 1
533μs
OUT
Envelope 16
17056μs/data word
OUT
Telegram pause
Data word
17ms
Data word
t
TREP = 62ms
Example: f = 30kHz, burst with 16 pulses, 26 periods
Example: f = 30kHz, burst with 16 pulses, 16 periods
6
T2525 [DATASHEET]
4657I–AUTO–04/14
Figure 5-6. Test Circuit
I
Ee = ΔU1/400kΩ
V
DD = 5V
ΔU1
400kΩ
1nF
IIN_DC
R1 = 220Ω
VS
IIN
20kΩ
1nF
IN
T2525
OUT
IEe
VPULSE
GND
ΔU2
+
C1
IIN_DC = ΔU2/40kΩ
20kΩ
f0
4.7μF
16
-
IIN_AC100
DC
+
tPER = 10ms
Figure 5-7. Application Circuit
(1) optional
VDD = 5V
R1 = 220Ω
R2(1) > 2.4kΩ
RPU
IS
VS
IOCL
IL
IN
T2525
Microcontroller
IIN
OUT
GND
VIN
VO
+
IIN_DC IEe
C
1 = 4.7μF
C2(1) = 470pF
T2525 [DATASHEET]
7
4657I–AUTO–04/14
6.
Chip Dimensions
Figure 6-1. Chip Size in µm
1130,1030
GND
351,904
IN
723,885
scribe
VS
63,660
T2525
63,70
Fusing
OUT
0,0
width
Note:
Pad coordinates are for lower left corner of the pad in µm from the origin 0,0
Dimensions
Length inclusive scribe
Width inclusive scribe
Thickness
1.15mm
1.29mm
290µ ±5%
90µ 90µ
70µ 70µ
AlCu/AlSiTi(1)
0.8µm
Pads
Fusing pads
Material
Pad metallurgy
Finish
Thickness
Material
Si3N4/SiO2
0.7/0.3µm
Thickness
Note:
Value depends on manufacture location.
8
T2525 [DATASHEET]
4657I–AUTO–04/14
7.
Ordering Information
Delivering: unsawn wafers (DDW) in box.
(3)
Extended Type Number
T2525S0xx(1)C-DDW
T2525S1xx(1)C-DDW
PL(2)
RPU
D(4)
Type(5)
2
1
30
30
2090
2090
Standard type: ≥ 10 pulses, enhanced sensibility, high data rate
Standard type: ≥ 10 pulses, enhanced sensibility, high data rate
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances,
secure data transmission
T2525S2xx(1)C-DDW
T2525S3xx(1)C-DDW
2
1
40
40
1373
1373
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances,
secure data transmission
T2525S6xx(1)C-DDW
T2525S7xx(1)C-DDW
2
1
30
30
3415
3415
Short burst type: ≥ 6 pulses, enhanced data rate
Short burst type: ≥ 6 pulses, enhanced data rate
Notes: 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44, 56 kHz.
2. Two pad layout versions (see Figure 8-1 and Figure 8-2) available for different assembly demand
3. Integrated pull-up resistor at pin OUT (see “Electrical Characteristics”)
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5V (see Figure 5-3 on page 5)
5. On request: noise type, data rate type
8.
Pad Layout
Figure 8-1. Pad Layout 1
GND
IN
OUT
VS
T2525
Fusing
Figure 8-2. Pad Layout 2
(6)
(5)
GND
IN
(1)
(3)
VS
T2525
OUT
Fusing
T2525 [DATASHEET]
9
4657I–AUTO–04/14
9.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
Revision No.
History
4657I-AUTO-04/14
Put datasheet in the latest template
Features on page 1 changed
Section 1 “Description” on page 1 changed
Section 2 “Pin Description” on page 3 changed
Section 4 “Thermal Resistance” on page 3 deleted
Section 4 “Electrical Characteristics” on pages 4 to 5 changed
Figure 5-3 “Data Transmission Rate, VS = 5V” on page 6 changed
Put datasheet in the latest template
4657H-AUTO-05/10
4657G-AUTO-09/09
4657F-AUTO-10/06
4657E-AUTO-04/06
Ordering Information table changed
Features on page 1 changed
Applications on page 1 changed
Section 1 “Description” on page 1 changed
Section 5 “Electrical Characteristics” number 3.3 and 3.4 on page 4 changed
Section 8 “Ordering Information” on page 10 changed
Section 9 “Pad Layout” on page 10 changed
Put datasheet in the latest template
Section 8 “Ordering Information” on page 10 changed
10
T2525 [DATASHEET]
4657I–AUTO–04/14
X
X X X X
X
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