TC1185-4.0VCTRT [MICROCHIP]

4 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO5, SOT-23A, 5 PIN;
TC1185-4.0VCTRT
型号: TC1185-4.0VCTRT
厂家: MICROCHIP    MICROCHIP
描述:

4 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO5, SOT-23A, 5 PIN

光电二极管
文件: 总14页 (文件大小:186K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TC1014  
TC1015  
TC1185  
EVALUATION  
KIT  
AVAILABLE  
50mA, 100mA, 150mA CMOS LDOs with Shutdown and  
Reference Bypass  
FEATURES  
GENERAL DESCRIPTION  
The TC1014, TC1015, and TC1185 are high accuracy  
(typically ±0.5%) CMOS upgrades for older (bipolar) low drop-  
out regulators such as the LP2980. Designed specifically for  
battery-operated systems, the devices’ CMOS construction  
eliminates wasted ground current, significantly extending bat-  
tery life. Total supply current is typically 50µA at full load (20 to  
60 times lower than in bipolar regulators!).  
Keyfeaturesforthedevicesincludeultralow-noiseopera-  
tion(plusoptionalBypassinput),fastresponsetostepchanges  
inload,andverylowdropoutvoltage,typically85mV(TC1014),  
180mV (TC1015), and 270mV (TC1185) at full load. Supply  
current is reduced to 0.5µA (max) and VOUT falls to zero when  
the shutdown input is low. The devices also incorporate both  
over-temperature and over-current protection.  
Extremely Low Supply Current (50  
Very Low Dropout Voltage  
50mA, 100mA, and 150mA Output  
(TC1014, TC1015, and TC1185, Respectively)  
High Output Voltage Accuracy  
Standard or Custom Output Voltages  
Power-Saving Shutdown Mode  
Reference Bypass Input for Ultra Low-Noise  
Operation  
µA, Typ.)  
Over-Current and Over-Temperature Protection  
Space-Saving 5-Pin SOT-23A Package  
Pin Compatible Upgrades for Bipolar Regulators  
The TC1014, TC1015, and TC1185 are stable with an  
output capacitor of only 1µF and have a maximum output  
current of 50mA, 100mA, and 150mA, respectively. For higher  
output versions, see the TC1107, TC1108, and  
TC1173 (IOUT = 300 mA) data sheets.  
APPLICATIONS  
Battery Operated Systems  
Portable Computers  
Medical Instruments  
Instrumentation  
Cellular / GSM / PHS Phones  
Linear Post-Regulator for SMPS  
Pagers  
ORDERING INFORMATION  
Part  
Junction  
Number  
Package  
Temp. Range  
TYPICAL APPLICATION  
TC1014-xxVCT  
TC1015-xxVCT  
TC1185-xxVCT  
5-Pin SOT-23A* – 40°C to +125°C  
5-Pin SOT-23A* – 40°C to +125°C  
5-Pin SOT-23A* – 40°C to +125°C  
TC1015EV  
Evaluation Kit for CMOS LDO Family  
NOTE: *5-Pin SOT-23A is equivalent to EIAJ SC-74A.  
1
5
V
V
V
V
OUT  
IN  
IN  
OUT  
Available Output Voltages:  
1µF  
1.8, 2.5, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0  
xx indicates ouput voltages  
2
3
GND  
TC1014  
TC1015  
TC1185  
Other output voltages are available. Please contact Microchip  
Technologies for details.  
PIN CONFIGURATION  
4
SHDN  
Bypass  
VOUT  
Bypass  
4
470pF  
Reference  
Bypass Cap  
(Optional)  
5
TC1014  
TC1015  
TC1185  
(5-Pin SOT-23A*)  
TOP VIEW  
Shutdown Control  
(from Power Control Logic)  
2
1
3
VIN  
GND  
SHDN  
NOTE: *5-Pin SOT-23A is equivalent to EIAJ SC-74A  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 1/04/01  
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V  
Lead Temperature (Soldering, 10 Sec.)................ +260°C  
ABSOLUTE MAXIMUM RATINGS*  
Input Voltage ..............................................................6.5V  
Output Voltage .................................. (– 0.3) to (VIN + 0.3)  
Power Dissipation ..................................Internally Limited  
Operating Temperature.................... – 40°C < TJ < 125°C  
Storage Temperature ............................65°C to +150°C  
*Stresses beyond those listed under "Absolute Maximum Ratings" may  
cause permanent damage to the device. These are stress ratings only, and  
functional operation of the device at these or any other conditions beyond  
those indicated in the operational sections of the specifications is not  
implied. Exposure to absolute maximum rating conditions for extended  
periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS: VIN = VR + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25  
°C, unless otherwise noted.  
Boldface type specifications apply for junction temperatures of – 40°C to +125°C.  
Symbol  
Parameter  
Test Conditions  
Min  
2.7  
Typ  
Max  
6.0  
Units  
VIN  
Input Operating Voltage  
Maximum Output Current  
Note 1  
V
IOUT  
TC1014  
TC1015  
TC1185  
50  
100  
150  
mA  
MAX  
VOUT  
Output Voltage  
Note 2  
Note 3  
VR – 2.5% VR ±0.5% VR + 2.5%  
V
TCVOUT  
VOUT Temperature Coefficient  
20  
ppm/°C  
40  
VOUT/VIN  
VOUT/VOUT  
Line Regulation  
(VR + 1V) < VIN < 6V  
0.05  
0.35  
%
%
Load Regulation  
TC1014;TC1015 IL = 0.1mA to IOUT  
0.5  
0.5  
2
3
MAX  
MAX  
TC1185  
IL = 0.1mA to IOUT  
Note 4  
VIN – VOUT  
Dropout Voltage  
IL = 100µA  
IL = 20mA  
IL = 50mA  
2
65  
85  
180  
270  
120  
250  
400  
mV  
TC1015; TC1185 IL = 100mA  
TC1185  
IL = 150mA  
Note 5  
IIN  
Supply Current (Note 8)  
Shutdown Supply Current  
Power Supply Rejection Ratio  
Output Short Circuit Current  
Thermal Regulation  
SHDN = VIH, IL = 0  
SHDN = 0V  
50  
0.05  
64  
80  
0.5  
µA  
µA  
IINSD  
PSRR  
F
RE 1KHz  
dB  
IOUT  
VOUT = 0V  
Notes 6, 7  
300  
0.04  
160  
10  
450  
mA  
SC  
VOUT/PD  
TSD  
V/W  
°C  
Thermal Shutdown Die Temperature  
Thermal Shutdown Hysteresis  
Output Noise  
TSD  
°C  
eN  
IL = IOUT  
,
F = 10kHz  
600  
nV/Hz  
MAX  
470pF from Bypass to GND  
SHDN Input  
VIH  
VIL  
SHDN Input High Threshold  
SHDN Input Low Threshold  
VIN = 2.5V to 6.5V  
VIN = 2.5V to 6.5V  
45  
%VIN  
%VIN  
15  
NOTES: 1. The minimum VIN has to meet two conditions: VIN 2.7V and VIN VR + VDROPOUT  
.
2. VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.  
MIN) x 10 6  
3. TCVOUT = (VOUT  
V
OUT  
MAX  
T  
VOUT  
x
4. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA  
to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification.  
5. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential.  
6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or  
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec.  
7. Themaximumallowablepowerdissipationisafunctionofambienttemperature, themaximumallowablejunctiontemperatureandthethermal  
resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal  
shutdown. Please see Thermal Considerations section of this data sheet for more details.  
8. Apply for Junction Temperatures of –40°C to +85°C.  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
2
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
PIN DESCRIPTION  
Pin No.  
(5-Pin SOT-23A)  
Symbol  
Description  
1
2
3
VIN  
Unregulated supply input.  
Ground terminal.  
GND  
SHDN  
Shutdown control input. The regulator is fully enabled when a logic high is applied to  
this input. The regulator enters shutdown when a logic low is applied to this input.During  
shutdown, output voltage falls to zero, and supply current is reduced to 0.5µA (max).  
4
5
Bypass  
VOUT  
Reference bypass input. Connecting a 470pF to this input further reduces output noise.  
Regulated voltage output.  
Bypass Input  
DETAILED DESCRIPTION  
A 470pF capacitor connected from the Bypass input to  
ground reduces noise present on the internal reference,  
which in turn significantly reduces output noise. If output  
noise is not a concern, this input may be left unconnected.  
Larger capacitor values may be used, but results in a longer  
time period to rated output voltage when power is initially  
applied.  
The TC1014, TC1015, and TC1185 are precision fixed  
output voltage regulators. (If an adjustable version is de-  
sired, please see the TC1070, TC1071, or TC1187 data  
sheets.) Unlike bipolar regulators, the TC1014, TC1015,  
and TC1185 supply current does not increase with load  
current. In addition, VOUT remains stable and within regula-  
tion at very low load currents (an important consideration in  
RTC and CMOS RAM battery back-up applications).  
Figure 1 shows a typical application circuit. The regula-  
tor is enabled any time the shutdown input (SHDN) is at or  
above VIH, and shutdown (disabled) when SHDN is at or  
below VIL. SHDN may be controlled by a CMOS logic gate,  
or I/O port of a microcontroller. If the SHDN input is not  
required, it should be connected directly to the input supply.  
While in shutdown, supply current decreases to 0.05µA  
(typical) and VOUT falls to zero volts.  
Output Capacitor  
A 1µF (min) capacitor from VOUT to ground is required.  
The output capacitor should have an effective series resis-  
tance of 5or less. A 1µF capacitor should be connected  
from VIN to GND if there is more than 10 inches of wire  
between the regulator and the AC filter capacitor, or if a  
battery is used as the power source. Aluminum electrolytic  
or tantalum capacitor types can be used. (Since many  
aluminum electrolytic capacitors freeze at approximately –  
30°C, solid tantalums are recommended for applications  
operating below – 25°C.) When operating from sources  
other than batteries, supply-noise rejection and transient  
response can be improved by increasing the value of the  
input and output capacitors and employing passive filtering  
techniques.  
V
V
V
OUT  
OUT  
IN  
1µF  
1µF  
BATTERY  
TC1014  
TC1015  
TC1185  
GND  
Thermal Considerations  
Thermal Shutdown  
Integrated thermal protection circuitry shuts the regula-  
tor off when die temperature exceeds 160°C. The regulator  
remains off until the die temperature drops to approximately  
150°C.  
SHDN  
Bypass  
470pF  
Reference  
Bypass Cap  
(Optional)  
Power Dissipation  
Shutdown Control  
(to CMOS Logic or Tie to V if Unused)  
The amount of power the regulator dissipates is prima-  
rilyafunctionofinputandoutputvoltage,andoutputcurrent.  
Thefollowingequationisusedtocalculateworstcasepower  
dissipation:  
IN  
Figure 1. Typical Application Circuit  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
3
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
PD (VIN  
VOUT  
ILOAD  
)
MIN MAX  
Maximum allowable power dissipation:  
MAX  
Where:  
PDMAX = (TJMAX – TAMAX  
)
PD = Worst case actual power dissipation  
= Maximum voltage on VIN  
θJA  
= (125 – 55)  
220  
VIN  
VOUT  
MAX  
= Minimum regulator output voltage  
MIN  
ILOADMAX = Maximum output (load) current  
= 318mW  
Equation 1.  
In this example, the TC1014 dissipates a maximum of  
only 26.7 mW; far below the allowable limit of 318 mW. In a  
similar manner, Equation 1 and Equation 2 can be used to  
calculate maximum current and/or input voltage limits.  
The maximum allowablepower dissipation (Equation 2)  
is a function of the maximum ambient temperature (TAMAX),  
the maximum allowable die temperature (125°C) and the  
thermal resistance from junction-to-air (θJA). The  
5-Pin SOT-23A package has a θJA of approximately 220°C/  
Watt when mounted on a single layer FR4 dielectric copper  
clad PC board.  
Layout Considerations  
The primary path of heat conduction out of the package  
isviathepackageleads. Therefore, layoutshavingaground  
plane, wide traces at the pads, and wide power supply bus  
lines combine to lower θJA and, therefore, increase the  
maximum allowable power dissipation limit.  
PD MAX (TJMAX – TA  
)
=
MAX  
θJA  
Where all terms are previously defined.  
Equation 2.  
Equation 1 can be used in conjunction with Equation 2  
to ensure regulator thermal operation is within limits. For  
example:  
Given:  
VIN  
VOUT  
ILOAD  
= 3.0V +10%  
= 2.7V – 2.5%  
= 40mA  
MAX  
MIN  
MAX  
TJMAX = 125°C  
TAMAX = 55°C  
Find: 1. Actual power dissipation  
2. Maximum allowable dissipation  
Actual power dissipation:  
PD (VIN  
VOUT  
ILOAD  
)
MIN MAX  
MAX  
= [(3.0 x 1.1) – (2.7 x .975)]40 x 10–3  
= 26.7mW  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
4
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TYPICAL CHARACTERISTICS: (Unless otherwise specified, all parts are measured at Temperature = 25°C)  
Dropout Voltage vs. Temperature (VOUT = 3.3V)  
ILOAD = 10mA  
Dropout Voltage vs. Temperature (VOUT = 3.3V)  
ILOAD = 50mA  
0.020  
0.018  
0.016  
0.014  
0.012  
0.010  
0.008  
0.006  
0.004  
0.002  
0.000  
0.100  
0.090  
0.080  
0.070  
0.060  
0.050  
0.040  
0.030  
0.020  
0.010  
0.000  
CIN = 1µF  
COUT = 1µF  
CIN = 1µF  
COUT = 1µF  
-40  
-20  
0
20  
50  
70  
125  
-40  
-20  
0
20  
50  
70  
125  
TEMPERATURE °C  
TEMPERATURE (°C)  
Dropout Voltage vs. Temperature (VOUT = 3.3V)  
ILOAD = 100mA  
Dropout Voltage vs. Temperature (VOUT = 3.3V)  
ILOAD = 150mA  
0.300  
0.250  
0.200  
0.150  
0.100  
0.050  
0.000  
0.200  
0.180  
0.160  
0.140  
0.120  
0.100  
0.080  
0.060  
0.040  
0.020  
0.000  
CIN = 1µF  
COUT = 1µF  
CIN = 1µF  
COUT = 1µF  
-40  
-20  
0
20  
50  
TEMPERATURE °C  
70  
125  
-40  
-20  
0
20  
50  
TEMPERATURE °C  
70  
125  
Ground Current vs.VIN (VOUT = 3.3V)  
Ground Current vs.VIN (VOUT = 3.3V)  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
ILOAD = 10mA  
ILOAD = 100mA  
CIN = 1µF  
COUT = 1µF  
CIN = 1µF  
COUT = 1µF  
0 0.5 1 1.5  
2
2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5  
0
2
2.5  
3
VIN (V)  
0.5 1 1.5  
3.5 4 4.5  
5 5.5 6 6.5 7 7.5  
VIN (V)  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
5
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TYPICAL CHARACTERISTICS: (Unless otherwise specified, all parts are measured at Temperature = 25°C)  
VOUT vs.VIN (VOUT = 3.3V)  
Ground Current vs.VIN (VOUT = 3.3V)  
ILOAD = 150mA  
3.5  
3
80  
70  
60  
50  
40  
30  
20  
10  
0
ILOAD = 0  
2.5  
2
1.5  
1
CIN = 1µF  
COUT = 1µF  
0.5  
0
CIN = 1µF  
COUT = 1µF  
2
0 0.5 1 1.5  
2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5  
VIN (V)  
0
2
2.5  
3
3.5  
4
4.5  
5
6
6.5 7  
0.5 1 1.5  
5.5  
VIN(V)  
Output Voltage vs. Temperature ( VOUT = 3.3V)  
ILOAD = 10mA  
VOUT vs. VIN ( VOUT = 3.3V)  
3.320  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
ILOAD = 100mA  
3.315  
3.310  
3.305  
3.300  
3.295  
3.290  
3.285  
3.280  
3.275  
CIN = 1µF  
COUT = 1µF  
CIN = 1µF  
VIN = 4.3V  
COUT = 1µF  
-40  
-20  
-10  
0
20  
40  
85  
125  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5 6.5  
6
7
TEMPERATURE °C  
VIN(V)  
Output Voltage vs. Temperature (VOUT = 3.3V)  
ILOAD = 150 mA  
3.290  
3.288  
3.286  
3.284  
3.282  
3.280  
3.278  
3.276  
3.274  
CIN = 1µF  
COUT = 1µF  
VIN = 4.3V  
-40  
-20  
-10  
0
20  
40  
85  
125  
TEMPERATURE °C  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
6
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TYPICAL CHARACTERISTICS  
Ouput Voltage vs.Temperature (VOUT = 5V)  
5.025  
Output Voltage vs.Temperature (VOUT = 5V)  
4.994  
4.992  
4.990  
4.988  
4.986  
4.984  
4.982  
4.980  
4.978  
4.976  
4.974  
ILOAD = 150mA  
ILOAD = 10mA  
5.020  
5.015  
5.010  
5.005  
5.000  
4.995  
4.990  
4.985  
VIN = 6V, COUT = 1µF, CIN = 1µF  
VIN = 6V, COUT = 1µF, CIN = 1µF  
-40  
-20  
-10  
0
20  
TEMPERATURE °C  
40  
85  
125  
-40  
-20  
-10  
0
20  
40  
85  
125  
TEMPERATURE °C  
Temperature vs. Quiescent Current (VOUT = 5V)  
ILOAD = 150mA  
Temperature vs. Quiescent Current (VOUT = 5V)  
80  
70  
60  
50  
40  
30  
20  
70  
60  
50  
40  
30  
20  
10  
0
ILOAD = 10mA  
10 VIN = 6V, COUT = 1µF, CIN = 1µF  
0
VIN = 6V, COUT = 1µF, CIN = 1µF  
-40  
-20  
-10  
0
20  
40  
85  
125  
-40  
-20  
-10  
0
20  
40  
85  
125  
TEMPERATURE (°C)  
TEMPERATURE °C  
Output Noise vs. Frequency  
Stability Region vs. Load Current  
= 1µF  
Power Supply Rejection Ratio  
= 10mA  
1000  
30  
35  
10.0  
1.0  
C
I
OUT  
to 10µF  
OUT  
R
C
C
C
= 50Ω  
LOAD  
= 1µF  
V
V
V
C
C
= 4V  
= 100mV  
= 3V  
= 0  
= 1µF  
IN  
IN  
OUT  
IN  
OUT  
DC  
AC  
OUT  
40  
45  
p-p  
= 1µF  
= 0  
IN  
BYP  
100  
10  
1
50  
55  
Stable Region  
60  
65  
70  
75  
80  
0.1  
0.0  
0.1  
0.01  
0.1K  
1K  
10K  
1000K  
100K  
0.01K  
0.01K  
0.1K  
10  
50 60 70 80 90 100  
40  
1K  
10K 100K  
0
20  
1000K  
30  
FREQUENCY (Hz)  
FREQUENCY (Hz)  
LOAD CURRENT (mA)  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
7
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TYPICAL CHARACTERISTICS  
Measure Rise Time of 3.3V LDO without Bypass Capacitor  
Measure Rise Time of 3.3V LDO with Bypass Capacitor  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA  
VIN = 4.3V, Temp = 25°C, Rise Time = 184µS  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA  
VIN = 4.3V, Temp = 25°C, Rise Time = 448µS  
VSHDN  
VSHDN  
VOUT  
VOUT  
Measure Fall Time of 3.3V LDO without Bypass Capacitor  
Measure Fall Time of 3.3V LDO with Bypass Capacitor  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA  
VIN = 4.3V, Temp = 25°C, Fall Time = 52µS  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA  
VIN = 4.3V, Temp = 25°C, Fall Time = 100µS  
VSHDN  
VSHDN  
VOUT  
VOUT  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
8
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TYPICAL CHARACTERISTICS  
Measure Rise Time of 5.0V LDO without Bypass Capacitor  
Measure Rise Time of 5.0V LDO with Bypass Capacitor  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0, ILOAD = 100mA  
VIN = 6V, Temp = 25°C, Rise Time = 192µS  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA  
VIN = 6V, Temp = 25°C, Rise Time = 390µS  
VSHDN  
VSHDN  
VOUT  
VOUT  
Measure Fall Time of 5.0V LDO with Bypass Capacitor  
Measure Fall Time of 5.0V LDO without Bypass Capacitor  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA  
VIN = 6V, Temp = 25°C, Fall Time = 167µS  
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA  
VIN = 6V, Temp = 25°C, Fall Time = 88µS  
VSHDN  
VSHDN  
VOUT  
VOUT  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
9
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TYPICAL CHARACTERISTICS  
Load Regulation of 3.3V LDO  
Load Regulation of 3.3V LDO  
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,  
VIN = VOUT + 0.25V, Temp = 25°C  
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,  
VIN = VOUT + 0.25V, Temp = 25°C  
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled  
ILOAD  
ILOAD  
VOUT  
VOUT  
Load Regulation of 3.3V LDO  
Line Regulation of 3.3V LDO  
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,  
VIN = VOUT + 0.25V, Temp = 25°C  
Conditions: VIN = 4V,+ 1V Squarewave @ 2.5kHz,  
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled  
VIN  
ILOAD  
VOUT  
VOUT  
CIN = 0µF, COUT = 1µF, CBYP = 470pF,  
ILOAD = 100mA, VIN & VOUT are AC coupled  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
10  
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TYPICAL CHARACTERISTICS  
Line Regulation of 5.0V LDO  
Thermal Shutdown Response of 5.0V LDO  
Conditions: VIN = 6V,+ 1V Squarewave @ 2.5kHz,  
Conditions: VIN = 6V,CIN = 0µF, COUT = 1µF  
VIN  
VOUT  
VOUT  
CIN = 0µF, COUT = 1µF, CBYP = 470pF,  
ILOAD = 100mA, VIN & VOUT are AC coupled  
ILOAD was increased until temperature of die reached about 160°C, at which time  
integrated thermal protection circuitry shuts the regulator off when die  
temperature exceeds approximately 160°C. The regulator remains off until die  
temperature drops to approximately 150°C.  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
11  
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
TAPING FORM  
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices  
PIN 1  
User Direction of Feed  
User Direction of Feed  
M a r k i n g  
D e v i c e  
Device  
Marking  
W
PIN 1  
P
Standard Reel Component Orientation  
TR Suffix Device  
Reverse Reel Component Orientation  
RT Suffix Device  
(Mark Right Side Up)  
(Mark Upside Down)  
Carrier Tape, Number of Components Per Reel and Reel Size  
Package  
Carrier Width (W)  
Pitch (P)  
Part Per Full Reel  
3000  
Reel Size  
5-Pin SOT-23A  
8 mm  
4 mm  
7 in  
MARKING  
& b = part number code + temperature range and  
voltage  
5-PIN SOT-23A  
(V)  
TC1014 Code TC1015 Code TC1185 Code  
1.8  
2.5  
2.7  
2.8  
2.85  
3.0  
3.3  
3.6  
4.0  
5.0  
AY  
A1  
A2  
AZ  
A8  
A3  
A5  
A9  
A0  
A7  
BY  
B1  
B2  
BZ  
B8  
B3  
B5  
B9  
B0  
B7  
NY  
N1  
N2  
NZ  
N8  
N3  
N5  
N9  
N0  
N7  
represents date code  
represents lot ID number  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
12  
50mA, 100mA, 150mA CMOS LDOs  
with Shutdown and Reference Bypass  
TC1014  
TC1015  
TC1185  
PACKAGE DIMENSIONS  
5-Pin SOT-23A (EIAJ SC-74A)  
.075 (1.90)  
REF.  
.071 (1.80)  
.059 (1.50)  
.122 (3.10)  
.098 (2.50)  
.020 (0.50)  
.012 (0.30)  
.037 (0.95)  
REF.  
PIN 1  
.122 (3.10)  
.106 (2.70)  
.057 (1.45)  
.035 (0.90)  
.010 (0.25)  
.004 (0.09)  
10° MAX.  
.006 (0.15)  
.000 (0.00)  
.024 (0.60)  
.004 (0.10)  
Dimensions: inches (mm)  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
13  
WORLDWIDE  
SALES AND  
S
ERVICE  
New York  
150 Motor Parkway, Suite 202  
Hauppauge, NY 11788  
AMERICAS  
Corporate Office  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7200 Fax: 480-792-7277  
Technical Support: 480-792-7627  
Web Address: http://www.microchip.com  
ASIA/PACIFIC (continued)  
Singapore  
Microchip Technology Singapore Pte Ltd.  
200 Middle Road  
#07-02 Prime Centre  
Tel: 631-273-5305 Fax: 631-273-5335  
San Jose  
Microchip Technology Inc.  
2107 North First Street, Suite 590  
San Jose, CA 95131  
Singapore, 188980  
Tel: 65-334-8870 Fax: 65-334-8850  
Rocky Mountain  
Taiwan  
Microchip Technology Taiwan  
11F-3, No. 207  
Tung Hua North Road  
Taipei, 105, Taiwan  
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139  
Tel: 408-436-7950 Fax: 408-436-7955  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7966 Fax: 480-792-7456  
Toronto  
6285 Northam Drive, Suite 108  
Mississauga, Ontario L4V 1X5, Canada  
Tel: 905-673-0699 Fax: 905-673-6509  
Atlanta  
500 Sugar Mill Road, Suite 200B  
Atlanta, GA 30350  
Tel: 770-640-0034 Fax: 770-640-0307  
Austin  
Analog Product Sales  
8303 MoPac Expressway North  
Suite A-201  
ASIA/PACIFIC  
China - Beijing  
Microchip Technology Beijing Office  
Unit 915  
New China Hong Kong Manhattan Bldg.  
No. 6 Chaoyangmen Beidajie  
Beijing, 100027, No. China  
Tel: 86-10-85282100 Fax: 86-10-85282104  
EUROPE  
Australia  
Microchip Technology Australia Pty Ltd  
Suite 22, 41 Rawson Street  
Epping 2121, NSW  
Austin, TX 78759  
Tel: 512-345-2030 Fax: 512-345-6085  
Australia  
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755  
Denmark  
Microchip Technology Denmark ApS  
Regus Business Centre  
Lautrup hoj 1-3  
Ballerup DK-2750 Denmark  
Tel: 45 4420 9895 Fax: 45 4420 9910  
Boston  
2 Lan Drive, Suite 120  
Westford, MA 01886  
Tel: 978-692-3848 Fax: 978-692-3821  
China - Shanghai  
Microchip Technology Shanghai Office  
Room 701, Bldg. B  
Far East International Plaza  
No. 317 Xian Xia Road  
Shanghai, 200051  
Boston  
Analog Product Sales  
Unit A-8-1 Millbrook Tarry Condominium  
97 Lowell Road  
Concord, MA 01742  
France  
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060  
Arizona Microchip Technology SARL  
Parc díActivite du Moulin de Massy  
43 Rue du Saule Trapu  
Hong Kong  
Microchip Asia Pacific  
RM 2101, Tower 2, Metroplaza  
223 Hing Fong Road  
Kwai Fong, N.T., Hong Kong  
Tel: 852-2401-1200 Fax: 852-2401-3431  
Tel: 978-371-6400 Fax: 978-371-0050  
Chicago  
333 Pierce Road, Suite 180  
Itasca, IL 60143  
Tel: 630-285-0071 Fax: 630-285-0075  
Dallas  
4570 Westgrove Drive, Suite 160  
Addison, TX 75001  
Tel: 972-818-7423 Fax: 972-818-2924  
Batiment A - ler Etage  
91300 Massy, France  
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79  
Germany  
Arizona Microchip Technology GmbH  
Gustav-Heinemann Ring 125  
D-81739 Munich, Germany  
India  
Microchip Technology Inc.  
India Liaison Office  
Divyasree Chambers  
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44  
1 Floor, Wing A (A3/A4)  
No. 11, OíShaugnessey Road  
Bangalore, 560 025, India  
Tel: 91-80-2290061 Fax: 91-80-2290062  
Dayton  
Germany  
Analog Product Sales  
Lochhamer Strasse 13  
D-82152 Martinsried, Germany  
Tel: 49-89-895650-0 Fax: 49-89-895650-22  
Two Prestige Place, Suite 130  
Miamisburg, OH 45342  
Tel: 937-291-1654 Fax: 937-291-9175  
Japan  
Detroit  
Tri-Atria Office Building  
32255 Northwestern Highway, Suite 190  
Farmington Hills, MI 48334  
Tel: 248-538-2250 Fax: 248-538-2260  
Microchip Technology Intl. Inc.  
Benex S-1 6F  
Italy  
Arizona Microchip Technology SRL  
Centro Direzionale Colleoni  
Palazzo Taurus 1 V. Le Colleoni 1  
20041 Agrate Brianza  
3-18-20, Shinyokohama  
Kohoku-Ku, Yokohama-shi  
Kanagawa, 222-0033, Japan  
Tel: 81-45-471- 6166 Fax: 81-45-471-6122  
Los Angeles  
18201 Von Karman, Suite 1090  
Irvine, CA 92612  
Milan, Italy  
Tel: 39-039-65791-1 Fax: 39-039-6899883  
Korea  
Microchip Technology Korea  
168-1, Youngbo Bldg. 3 Floor  
Samsung-Dong, Kangnam-Ku  
Seoul, Korea  
Tel: 949-263-1888 Fax: 949-263-1338  
United Kingdom  
Arizona Microchip Technology Ltd.  
505 Eskdale Road  
Winnersh Triangle  
Wokingham  
Mountain View  
Analog Product Sales  
1300 Terra Bella Avenue  
Mountain View, CA 94043-1836  
Tel: 650-968-9241 Fax: 650-967-1590  
Tel: 82-2-554-7200 Fax: 82-2-558-5934  
Berkshire, England RG41 5TU  
Tel: 44 118 921 5869 Fax: 44-118 921-5820  
01/09/01  
All rights reserved.  
©
2001 Microchip Technology Incorporated. Printed in the USA. 1/01  
Printed on recycled paper.  
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by  
updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is  
assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual  
property rights arising from such use or otherwise. Use of Microchipís products as critical components in life support systems is not authorized except with  
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellec-  
tual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights  
reserved. All other trademarks mentioned herein are the property of their respective companies.  
2001 Microchip Technology Inc. DS21335A  
TC1014/TC1015/TC1185-3 01/04/01  
14  

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