TC1189TECT [MICROCHIP]
3.15 V FIXED POSITIVE LDO REGULATOR, 0.24 V DROPOUT, PDSO5, SOT-23A, 5 PIN;型号: | TC1189TECT |
厂家: | MICROCHIP |
描述: | 3.15 V FIXED POSITIVE LDO REGULATOR, 0.24 V DROPOUT, PDSO5, SOT-23A, 5 PIN 稳压器 |
文件: | 总18页 (文件大小:299K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TC1188/TC1189
MAX8863/64 Pin Compatible, Low Dropout,
120 mA Linear Regulators
Features
General Description
• Input Voltage Range: 2.7 V to 6.0 V
• 120 mA Output Current
The TC1188 and TC1189 are fixed output, low dropout
linear regulators that operate from a 2.7V to 6.0V input
voltage source. The output is capable of delivering up
to 120 mA while consuming only 50 µA of quiescent
current. The low dropout voltage, 120 mV, make the
TC1188 and TC1189 good choices for battery powered
applications. Integrated over-current and over-temper-
ature protection features provide for a fault tolerant
solution.
• Low Supply Current: 50 µA, (typical)
• Low Dropout Voltage: 110 mV, (typical at 100 mA)
• Fast Turn-On from Shutdown: 140 µsec (typical)
• Low Output Noise
• Over-Current and Over-Temperature Protection
• Low Power Shutdown Mode
The TC1189 includes an output voltage auto discharge
feature. When shutdown, the TC1189 will automatically
discharge the output voltage using an internal N-Chan-
nel MOSFET switch.
• Auto Discharge of Output Capacitor (TC1189)
Applications
• Battery Powered Systems
• Portable Computers
• Medical Instruments
• Cellular, Cordless Phones
• PDAs
Fixed output voltage options for the TC1188/TC1189
are: 1.80V, 2.80V, 2.84V and 3.15V. Both the TC1188
and TC1189 are available in SOT23-5 packages.
Typical Application Circuit
• Pagers
Output
Voltage
V
V
IN
OUT
Package Type
TC1188
TC1189
5-Pin SOT-23A
+
C
1 µF
C
1 µF
GND
5
VOUT
4
IN
OUT
SHDN
–
Battery
TC1188
TC1189
GND
GND
1
2
3
VIN
SHDN GND
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
2002-2012 Microchip Technology Inc.
DS21364C-page 1
TC1188/TC1189
*Notice: *Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Output Short-Circuit Duration.............................Infinite
Output Voltage...........................(-0.3V) to (VIN + 0.3V)
Maximum Voltage On Any Pin.... (-0.3V) to (VIN +0.3V)
Continuous Power Dissipation (TA = +70°C)
SOT-23-5 (derate 7.1 mW/°C above +70°C)
..................................................................571 mW
Operating Temperature Range...............-40°C to 85°C
Storage Temperature..........................-65°C to +160°C
Lead Temperature (Soldering, 10 Sec.) ...........+300°C
DC SPECIFICATIONS
Electrical Characteristics: VIN = +3.6V, GND = 0V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.
(Note 1)
Parameters
Input Voltage
Symbol
Min
Typ
Max
Units
Conditions
V
VOUT+0.5V
2.7
—
—
6.0
6.0
V
VOUT 2.5V
IN
VOUT = 1.8V (Note 2)
0 mA IOUT50 mA
0 mA IOUT50 mA
0 mA IOUT50 mA
0 mA IOUT50 mA
Output Voltage
VOUT
3.05
2.75
2.70
1.745
120
—
3.15
2.84
2.80
1.80
—
3.25
2.93
2.88
1.85
—
V
V
T
S
R
Q
V
V
Maximum Output Current
Current Limit
IOUT
ILIM
IIN
mA
mA
µA
mV
mV
mV
280
50
—
Note 3
Input Current
—
90
IOUT = 0
Dropout Voltage
—
1.1
—
IOUT = 1 mA
IOUT = 50 mA
—
55
120
240
0.10
—
—
110
0.001
—
IOUT = 100 mA (Note 4)
Line Regulation
VLNR
VLDR
-0.10
—
%/V VIN = VOUT0.5V to 6.0V
%/V IOUT = 1 mA
Load Regulation
—
0.01
350
220
10
0.040
—
%/mA IOUT = 0 mA to 50 mA
µVRMS 10 Hz to 1 MHz, COUT = 1 ΜF
µVRMS 10 Hz to 1 MHz COUT = 100 ΜF
Output Voltage Noise
—
—
—
Wake Up Time
tWK
—
—
µsec VIN = 3.6V
CIN = 1 µF, COUT = 1 µF
IL = 30 mA, (See Figure 3-1)
(from Shutdown Mode)
Setting Time
tS
—
140
—
µsec VIN = 3.6V
CIN = 1 µF, COUT = 1 µF
IL = 30 mA, (See Figure 3-1)
(from Shutdown Mode)
Note 1: Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range are ensured through cor-
relation using Statistical Quality Control (SQC) methods.
2: Validated by line regulation test.
3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum.
4: The dropout voltage is defined as (VIN – VOUT) when VOUT is 100 mV below the value of VOUT for
VIN = VOUT +2V.
DS21364C-page 2
2002-2012 Microchip Technology Inc.
TC1188/TC1189
DC SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = +3.6V, GND = 0V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.
(Note 1)
Parameters
Shutdown:
Symbol
Min
Typ
Max
Units
Conditions
SHDN Input Threshold
SHDN Input Bias Current
Shutdown Supply Current
VIH
VIL
2.0
—
—
—
—
—
—
—
—
—
0.4
100
—
V
V
I
0.1
50
nA
nA
A
A
VSHDN = VIN, TA = +25°C, TA = TMAX
VSHDN = VIN, TA = +25°C, TA = TMAX
VOUT = 0V, TA = +25°C, TA = TMAX
VOUT = 0V, TA = +25°C, TA = TMAX
shdn
I
0.002
0.02
1
1
qshdn
—
Shutdown to Output Discharge
Delay (TC1189)
—
msec COUT = 1 F, no load at 10% of VOUT
Thermal Protection
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
TSHDN
—
—
170
20
—
—
°C
°C
TSHDN
Note 1: Limits are 100% production tested at TA = +25°C. Limits over the operating temperature range are ensured through cor-
relation using Statistical Quality Control (SQC) methods.
2: Validated by line regulation test.
3: Not tested. For design purposes, the current limit should be considered 150 mA minimum to 410 mA maximum.
4: The dropout voltage is defined as (VIN – VOUT) when VOUT is 100 mV below the value of VOUT for
VIN = VOUT +2V.
2002-2012 Microchip Technology Inc.
DS21364C-page 3
TC1188/TC1189
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.10
0.08
0.040
0.035
0.030
0.025
Line Reg. @ 3.50 V
to 5.50V(%)
0.06
0.04
0.02
0.00
0.020
0.015
Load Reg. 0 to 50mA (%)
Load Reg. 0 to 100mA (%)
–0.02
–0.04
–0.06
0.010
0.005
0.000
–0.08
–0.10
25°C
70
°C
85°C
–40
°C
0°C
–40
°
C
0°
C
25°
C
70°
C
85°C
TEMPERATURE (
°
C)
TEMPERATURE (
°C)
FIGURE 2-1:
Line Regulation vs.
FIGURE 2-4:
Load Regulation vs.
Temperature. (TC1188)
Temperature. (TC1188)
2.930
2.910
0.120
0.100
50mA, Dropout V (V)
V
- SET/1.0mA
OUT
@ 3.5V (V)
2.890
2.870
2.850
2.830
2.810
2.790
2.770
2.750
0.080
0.060
0.040
0.020
0.000
70
°
C
85°C
70°C
85
°C
–40
°C
0°C
–40°C
0
°C
25°C
25°C
TEMPERATURE (
°
C)
TEMPERATURE ( C)
°
FIGURE 2-2:
Output Voltage vs.
FIGURE 2-5:
Dropout Voltage vs.
Temperature. (TC1188)
Temperature. (TC1188)
0.040
10.0
R
C
= 50μΩ
LOAD
= 1
Load Reg. 0 to 50mA (%)
μ
F
0.035
0.030
0.025
OUT
1.0
0.020
0.015
0.1
0.0
0.010
0.005
0.000
70
°
C
85°C
–40°
C
0°C
25°C
0.01
10
0.01
1
100
1000
TEMPERATURE ( C)
°
FREQUENCY (kHz)
FIGURE 2-3:
Load Regulation vs.
FIGURE 2-6:
Output Noise vs. Frequency.
Temperature. (TC1188)
(TC1188)
DS21364C-page 4
2002-2012 Microchip Technology Inc.
TC1188/TC1189
-10
-20
C
= COUT = 1μF, R = 470Ω, XSHDN = 3.5V
L
IN
V
= 2.84V
= 50Ω
OUT
R
LOAD
100mV p-p
V
= 4.5V
IN
-30
V
= 3.5V
CH1
CH2
IN
-40
-50
T
CH1 GND
CH2 GND
-60
-70
V
AC 20μV/DIV
OUT
C
= 1μF
OUT
-80
-90
T
-100
10
1M 10M
100 1K 10K 100K
FREQUENCY (kHz)
100μsec/Div
FIGURE 2-7:
Power Supply Rejection
FIGURE 2-10:
TC1189 Line Response.
Ratio vs. Frequency. (TC1188)
3V
SHDN
T = 25
°
0V
C
C
R
= 1μF
2.8V
IN
L
L
=1μF
= ∞
V
= 0.5V/DIV
OUT
V
= 3.6V
IN
I
= 30mA
LOAD
C
C
SHDN
= 1μF
IN
LOAD
SHDN = 0V
= 1μF
CH1 GND
CH2 GND
V
OUT
0V
TIME (100μs/Div)
200μsec/Div
FIGURE 2-11:
Wake-Up Response Time.
FIGURE 2-8:
TC1189 Shutdown Transient
Response.
C
C
R
= 1μF
XSHDN = 3V
IN
T
=1μF
OUT
Turn On
Time = 150μS
= 100
Ω
L
V
= 3.5V
IN
V
= 2.7V
OUT
CH2
CH1
No Overshoot
XSHDN = 0V
CH1 GND
CH2 GND
V
= 0V
OUT
T
200μsec/Div
FIGURE 2-9:
TC1189 Shutdown Transient
Response.
2002-2012 Microchip Technology Inc.
DS21364C-page 5
TC1188/TC1189
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
Symbol
PIN FUNCTION TABLE
Description
SHDN
Active Low Shutdown Input. When the SHDN input is low (< 0.2V), the quiscent current for the
TC1188/TC1189 is reduced to 0.1 nA. When the input voltage to the SHDN pin is high (> 2.0V) the
output of the TC1188/TC1189 is enabled. For the TC1189 only, the output capacitor is discharged by
an internal switch when the SHDN is low.
GND
VIN
Ground. Connect to ground.
Unregulated Input Voltage. The input voltage can range from 2.7V to 6.0V.
Regulator Output. Sources up to 120 mA. Bypass with a 1 µF, <1 typical ESR capacitor to GND.
Connect to GND.
VOUT
GND
released from shutdown. The settling time of the output
voltage is dependent on load conditions and output
capacitance on VOUT (RC response).
3.1
Detailed Description
The TC1188/TC1189 devices are fixed output, low
dropout linear regulators. Utilizing CMOS construction,
the internal quiescent current consumed by the regula-
tor is minimized when compared to older bipolar low
dropout regulators.
VIH
VIL
tS
SHDN
VOUT
The LDO output voltage is sensed at the non-inverting
pin of the internal error amplifier. The internal voltage
reference is sensed at the inverting pin of the internal
error amplifier. The error amplifier adjusts the gate
source voltage of the internal P-channel pass device
until the divided down output voltage matches the inter-
nal reference voltage. When it does, the LDO output
voltage is in regulation.
98%
2%
tWK
FIGURE 3-1:
Wake-Up Response Time.
3.3
Internal P-Channel Pass
Transistor
The SHDN, when pulled low, is used to turn off the P-
Channel MOSFET and lower the internal quiescent
current to less than 1 µA maximum. For normal opera-
tion, the SHDN pin is pulled to a high level. (> 2.0V).
The Internal P-Channel MOSFET is operated in the lin-
ear region to regulate the LDO output voltage. The
RDSon of the P-Channel MOSFET is approximately
1.1 making the LDO able to regulate with little input
to output voltage differential, "Low Dropout". Another
benefit of using CMOS construction is that the P-Chan-
nel MOSFET is a voltage controlled device, so it
doesn't consume a fraction of the bias current required
of bipolar PNP LDOs.
The TC1189 incorporates an internal N-Channel MOS-
FET, which is used to discharge the output capacitor
when shutdown. The TC1188 does not have the inter-
nal N-Channel MOSFET, therefore, when the device is
shutdown, the output voltage will decrease at a rate
which is dependant on the load current.
3.2
Turn-On Response
The turn-on response is defined as two separate
response categories: Wake-Up Time (tWK) and Settling
Time (tS).
The TC1188/TC1189 have fast wake-up times (10 µsec
typical) when released from shutdown. See Figure 3-1
for the wake-up time, designated as tWK. The wake-up
time is defined as the time it takes for the output to rise
to 2% of the VOUT value after being released from shut-
down.
The total turn on response is defined as the Settling
Time (tS) (Figure 3-1). Settling Time (inclusive with tWK
)
is defined as the condition when the output is within 2%
of its fully enabled value (140 µsec typical) when
DS21364C-page 6
2002-2012 Microchip Technology Inc.
TC1188/TC1189
V
IN
–
+
PMOS Pass
Transistor
MOS Driver
W
I
ith LIMIT
Shutdown
Logic
V
SHDN
OUT
Error
Amplifier
N
(TC1189 Only)
Thermal
Sensor
Bandgap
GND
Reference
GND
FIGURE 3-2:
Functional Block Diagram.
3.4
Shutdown
3.7
Operating Region and Power
Dissipation
The SHDN input is used to turn off the LDO P-Channel
pass MOSFET and internal bias. When shutdown, the
typical quiescent current consumed by the LDO is
0.1 nA. A logic low (< 0.4V) at the SHDN input will
cause the device to operate in the shutdown mode. A
logic high (> 2.0V) at the SHDN input will cause the
device to operate in the normal mode.
The internal power dissipation to the LDO is primarily
determined by the input voltage, output voltage and
output current. The following equation is used to
approximate the worst case for power dissipation:
EQUATION
PD = VIN(MAX) - VOUT(MIN) x ILOAD(MAX)
3.5
Current Limit
The LDO output current is monitored internal to the
TC1188/TC1189. The internal current sense will limit
the LDO output current to a typical value of 280 mA.
The current limit can range from approximately 50 mA
to 410 mA from device to device. The internal current
limit protects the device from a continuous output short
circuit.
Where:
PD = Worst case internal power dissipation.
V
IN(MAX) = Maximum input voltage.
OUT(MIN) = Minimum output voltage.
LOAD(MAX) = Maximum output current.
V
I
The maximum power dissipation is a function of the
maximum ambient temperature, TA(MAX), the maximum
junction temperature, TJ(MAX), and the package thermal
resistance from junction to air, JA. The 5-Pin SOT23A
package has a JA of approximately 220°C/Watt.
3.6
Thermal Overload Protection
Integrated thermal protection circuitry shuts the
TC1188/TC1189 off when the internal die temperature
exceeds approximately 170°C. The regulator output
remains off until the internal die temperature drops to
approximately 150°C.
EQUATION
PD = (TJ(MAX) - TA(MAX))/JA
Where all terms are previously defined.
2002-2012 Microchip Technology Inc.
DS21364C-page 7
TC1188/TC1189
EXAMPLE 3-1:
4.0
4.1
APPLICATIONS INFORMATION
Input Capacitor
The previously defined power dissipation equations
can be used to ensure that the regulator thermal
operation is within limits.
A 1 µF (or larger) capacitor is recommended to bypass
the LDO input and lower input impedance for circuit
stability when operating from batteries or high imped-
ance sources. The input capacitor can be ceramic, tan-
talum or aluminum electrolytic. For applications that
require low noise and input power supply rejection, low
effective series resistance (ESR) ceramic capacitors
are recommended over higher ESR electrolytic capac-
itors. Larger value input capacitors can be used to
improve circuit performance.
Given:
VIN(MAX) = 3.0V +10%
VOUT(MAX) = 2.7V - 2.5%
ILOAD(MAX) = 40 MA
TJ(MAX) = 125°C
TA(MAX) = 55°C
Find:
4.2
Output Capacitor
1. Actual power dissipation.
A 1 µF (minimum) capacitor is required from VOUT to
ground to ensure circuit stability. The output capacitor
should have an ESR greater than 0.1 ohms and less
than 2 ohm. Tantalum or aluminum electrolytic capaci-
tors are recommended. Since many aluminum electro-
lytic capacitors freeze at approximately -30°C, solid
tantalums are recommended for applications operating
below 25°C.
2. Maximum allowable dissipation.
Actual power dissipation:
PD = VIN(MAX) - VOUT(MIN) x ILOAD(MAX)
PD = ((3.0 * 1.1) - (2.7 * 0.975)) * 40 mA
PD = 26.7 mWatts
Maximum allowable power dissipation:
PD = (TJ(MAX) - TA(MAX))/JA
PD(MAX) = (125 - 55) / 220
PD(MAX) = 318 mWatts.
In this example, the TC1188/TC1189 dissipates a max-
imum of 26.7 mW below the allowable limit of 318 mW.
In a similar manner, the power dissipation equation, as
a function of VIN, VOUT and ILOAD, along with the power
dissipation equation, as a function of maximum junction
temperature, maximum ambient temperature and junc-
tion to air thermal resistance, can be used to calculate
maximum current and/or maximum input voltage limits.
DS21364C-page 8
2002-2012 Microchip Technology Inc.
TC1188/TC1189
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
5
4
1
2
3
Part Number
(V)
Code
TC1188-XECT
TC1188-XECT
TC1188-XECT
TC1188-XECT
1.80
2.80
2.84
3.15
G4
G3
G2
G1
TC1189-XECT
TC1189-XECT
TC1189-XECT
TC1189-XECT
1.80
2.80
2.84
3.15
H4
H3
H2
H1
Legend: XX...X Customer-specific information
Y
YY
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
WW
NNN
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
*
)
3
e
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
2002-2012 Microchip Technology Inc.
DS21364C-page 9
TC1188/TC1189
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
B
p1
D
n
1
c
A
A2
A1
L
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
5
MAX
n
p
Number of Pins
5
Pitch
.038
.075
.046
.043
.003
.110
.064
.116
.018
5
0.95
1.90
p1
Outside lead pitch (basic)
Overall Height
A
A2
A1
E
.035
.035
.000
.102
.059
.110
.014
0
.057
0.90
0.90
1.18
1.10
0.08
2.80
1.63
2.95
0.45
5
1.45
Molded Package Thickness
.051
.006
.118
.069
.122
.022
10
1.30
0.15
3.00
1.75
3.10
0.55
10
Standoff
§
0.00
2.60
1.50
2.80
0.35
0
Overall Width
Molded Package Width
Overall Length
E1
D
Foot Length
L
Foot Angle
c
Lead Thickness
Lead Width
.004
.014
0
.006
.017
5
.008
.020
10
0.09
0.35
0
0.15
0.43
5
0.20
0.50
10
B
Mold Draft Angle Top
Mold Draft Angle Bottom
0
5
10
0
5
10
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MO-178
Drawing No. C04-091
DS21364C-page 10
2002-2012 Microchip Technology Inc.
TC1188/TC1189
REVISION HISTORY
Revision C (November 2012)
Added a note to the package outline drawing.
2002-2012 Microchip Technology Inc.
DS21364C-page 11
TC1188/TC1189
NOTES:
DS21364C-page 12
2002-2012 Microchip Technology Inc.
TC1188/TC1189
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2002-2012 Microchip Technology Inc.
DS21364C-page 13
TC1188/TC1189
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Telephone: (_______) _________ - _________
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Literature Number: DS21364C
Application (optional):
Would you like a reply?
Y
N
Device: TC1188/TC1189
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this document easy to follow? If not, why?
4. What additions to the document do you think would enhance the structure and subject?
5. What deletions from the document could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
DS21364C-page 14
2002-2012 Microchip Technology Inc.
TC1188/TC1189
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
Device
X
/XX
a)
b)
c)
d)
TC1188QECTTR: 1.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
Voltage
Output
Package
TC1188RECTTR: 2.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
TC1188SECTTR: 2.84V, 100 mA,
MAX8863/64 Pin Compatible LDO
Device:
TC1188: 100 mA, MAX8863/64 Pin Compatible LDO
TC1189: 100 mA, MAX8863/64 Pin Compatible LDO
TC1188TECTTR: 3.15V, 100 mA,
MAX8863/64 Pin Compatible LDO
Voltage Output
Options:
Q
R
S
T
=
=
=
=
1.80V
2.80V
2.84V
3.15V
a)
b)
c)
d)
TC1189QECTTR: 1.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
TC1189RECTTR: 2.80V, 100 mA,
MAX8863/64 Pin Compatible LDO
Package:
ECTTR
=
SOT-23A, 5-Pin (Tape and Reel)
TC1189SECTTR: 2.84V, 100 mA,
MAX8863/64 Pin Compatible LDO
TC1189TECTTR: 3.15V, 100 mA,
MAX8863/64 Pin Compatible LDO
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002-2012 Microchip Technology Inc.
DS21364C-page15
TC1188/TC1189
NOTES:
DS21364C-page 16
2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
32
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767450
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
== ISO/TS 16949 ==
2002-2012 Microchip Technology Inc.
DS21364C-page 17
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Web Address:
www.microchip.com
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Korea - Seoul
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Los Angeles
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Toronto
Mississauga, Ontario,
Canada
China - Xiamen
Tel: 905-673-0699
Fax: 905-673-6509
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
10/26/12
DS21364C-page 18
2002-2012 Microchip Technology Inc.
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