TC2015-3.0VCT [MICROCHIP]
3 V FIXED POSITIVE LDO REGULATOR, 0.14 V DROPOUT, PDSO5, SC-74A, SOT-23A, 5 PIN;型号: | TC2015-3.0VCT |
厂家: | MICROCHIP |
描述: | 3 V FIXED POSITIVE LDO REGULATOR, 0.14 V DROPOUT, PDSO5, SC-74A, SOT-23A, 5 PIN 光电二极管 输出元件 调节器 |
文件: | 总18页 (文件大小:355K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TC2014/2015/2185
M
50 mA, 100 mA, 150 mA CMOS LDOs with
Shutdown and Reference Bypass
Features
General Description
• Low Supply Current: 80 µA (Max)
The TC2014, TC2015 and TC2185 are high-accuracy
(typically ±0.4%) CMOS upgrades for bipolar low drop-
out regulators, such as the LP2980. Total supply cur-
rent is typically 55 µA; 20 to 60 times lower than in
bipolar regulators.
• Low Dropout Voltage: 140 mV (Typ) @ 150 mA
• High Output Voltage Accuracy: ±0.4% (Typ)
• Standard or Custom Output Voltages
• Power-Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Fast Shutdown Response Time: 60 µsec (Typ)
• Over-Current Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin Compatible Upgrades for Bipolar Regulators
• Wide Operating Temperature Range:
-40°C to +125°C
The key features of the device include low noise oper-
ation (plus bypass reference), low dropout voltage
– typically 45 mV for the TC2014, 90 mV for the
TC2015, and 140 mV for the TC2185, at full load – and
fast response to step changes in load. Supply current
is reduced to 0.5 µA (max) and V
falls to zero when
OUT
the shutdown input is low. The devices also incorporate
over-current protection.
The TC2014, TC2015 and TC2185 are stable with an
output capacitor of 1 µF and have a maximum output
current of 50 mA, 100 mA and 150 mA, respectively.
For higher output versions, see the TC1107
(DS21356), TC1108 (DS21357) and TC1173
Applications
• Battery Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
(DS21362) (I
= 300 mA) datasheets.
OUT
Related Literature
• Cellular / GSM / PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
• Application Notes: AN765, AN766, AN776 and
AN792
Typical Application
Package Type
1
5
VOUT
VIN
VOUT
VIN
5-Pin SOT-23A
+
+
VOUT
5
Bypass
4
1 µF
1 µF
2
TC2014
TC2014
TC2015
TC2185
GND
TC2015
TC2185
2
1
3
VIN
GND SHDN
3
4
SHDN
Bypass
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
2003 Microchip Technology Inc.
DS21662C-page 1
TC2014/2015/2185
1.0
ELECTRICAL
PIN FUNCTION TABLE
CHARACTERISTICS
Name
Function
Absolute Maximum Ratings †
V
GND
SHDN
Bypass
Unregulated Supply Input
Ground Terminal
Shutdown Control Input
Reference Bypass Input
Regulated Voltage Output
IN
Input Voltage ................................................................... 6.5V
Output Voltage ....................................... (– 0.3) to (VIN + 0.3)
Operating Temperature ......................... – 40°C < TJ < 125°C
Storage Temperature ................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ VIN +0.3V to – 0.3V
Maximum Junction Temperature.................................. 150°C
V
OUT
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Operating Voltage
Maximum Output
Current
VIN
IOUTMAX
2.7
50
100
150
—
—
—
—
6.0
—
—
V
mA
Note 1
TC2014
TC2015
TC2185
Note 2
—
Output Voltage
VOUT
VR - 2.0% VR ± 0.4% VR + 2.0%
V
VOUT Temperature
Coefficient
TCVOUT
—
—
20
40
—
—
ppm/°C Note 3
Line Regulation
Load Regulation
(Note 4)
∆VOUT/∆VIN
∆VOUT/VOUT
—
0.05
0.33
0.43
2
0.5
+1.0
+2.0
—
%
%
(VR + 1V) < VIN < 6V
TC2014;TC2015: IL = 0.1 mA to IOUTMAX
TC2185: IL = 0.1 mA to IOUTMAX Note 4
-1.0
-2.0
—
Dropout Voltage
VIN - VOUT
mV
Note 5
IL = 100 µA
IL = 50 mA
—
45
70
—
—
—
—
90
140
55
140
210
80
TC2015; TC2185 IL = 100 mA
TC2185
IL = 150 mA
Supply Current
IIN
µA
µA
SHDN = VIH, IL=0
SHDN = 0V
Shutdown Supply
Current
IINSD
0.05
0.5
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT
.
2:
3:
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
–6
(VOUTMAX – VOUTMIN) × 10
---------------------------------------------------------------------------
=
TCVOUT
V
OUT × ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a V differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN
.
DS21662C-page 2
2003 Microchip Technology Inc.
TC2014/2015/2185
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 µA, COUT = 3.3 µF, SHDN > VIH, TA = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Power Supply
Rejection Ratio
PSRR
—
55
—
dB
F ≤ 1 kHz, Cbypass=0.01 µF
Output Short Circuit
Current
IOUTSC
—
160
300
mA
VOUT = 0V
Thermal Regulation
Output Noise
∆VOUT/∆PD
—
—
0.04
200
—
—
V/W
Note 6, Note 7
eN
nV/√Hz IL = IOUTMAX, F = 10 kHz
470 pF from Bypass to GND
Response Time,
(Note 8)
TR
—
60
—
µsec
VIN = 4V, IL = 30 mA,
IN = 1 µF, COUT = 10 µF
C
(from Shutdown Mode)
SHDN Input
SHDN Input High
VIH
VIL
60
—
—
—
%VIN VIN = 2.5V to 6.0V
%VIN VIN = 2.5V to 6.0V
Threshold
SHDN Input Low
Threshold
—
15
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT
.
2:
3:
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
–6
(VOUTMAX – VOUTMIN) × 10
---------------------------------------------------------------------------
=
TCVOUT
V
OUT × ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a V differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA).
8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN
.
2003 Microchip Technology Inc.
DS21662C-page 3
TC2014/2015/2185
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C
= 3.3 µF, SHDN > V , T = +25°C.
IN
R
L
OUT
IH
A
63.0
60.0
57.0
54.0
51.0
48.0
45.0
1.820
1.815
1.810
1.805
1.800
1.795
1.790
1.785
VIN = 2.8V
VIN = 6.0V
VR = 1.8V
C
OUT = 3.3 µF
VIN = 6.0V
VIN = 2.8V
VR = 1.8V
COUT = 3.3 µF
IL = 150 mA
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-1:
Supply Current vs. Junction
FIGURE 2-4:
Output Voltage vs. Junction
Temperature.
Temperature (150 mA).
0.8
0.6
0.4
0.2
0
1.82
TA = -45°C
TA = +25°C
TA = +25°C
1.815
1.81
TA = -45°C
1.805
1.8
TA = +125°C
TA = +125°C
-0.2
1.795
1.79
VR = 1.8V
VR = 1.8V
COUT = 3.3 µF
L = 150 mA
-0.4
-0.6
-0.8
C
OUT = 3.3 µF
IL = 150 mA
I
1.785
2.8 3.2 3.6
4
4.4 4.8 5.2 5.6
6
2.8 3.2 3.6
4
4.4 4.8 5.2 5.6
6
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-2:
Load Regulation vs. Supply
FIGURE 2-5:
Output Voltage vs. Supply
Voltage.
Voltage.
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
1.810
VR = 1.8V
COUT = 3.3 µF
VR = 1.8V
OUT = 3.3 µF
IL = 0.1 mA
C
VIN = 2.8V
VIN = 6.0V
IL = 150 mA
1.805
1.800
1.795
1.790
IL = 100 mA
IL = 50 mA
IL = 20 mA
Note: Dropout Voltage is not
a tested parameter for 1.8V.
IN(min) ! 2.7V
0.05
0.00
V
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-3:
Output Voltage vs. Junction
FIGURE 2-6:
Dropout Voltage vs.
Temperature (0.1 mA).
Junction Temperature.
DS21662C-page 4
2003 Microchip Technology Inc.
TC2014/2015/2185
Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C
= 3.3 µF, SHDN > V , T = +25°C.
IN
R
L
OUT
IH
A
60.0
58.0
56.0
54.0
52.0
50.0
48.0
46.0
44.0
2.705
2.700
2.695
2.690
2.685
2.680
2.675
2.670
2.665
VR = 2.7V
COUT = 3.3 µF
VIN = 3.7V
VIN = 6.0V
VIN = 6.0V
VIN = 2.8V
VR = 2.7V
OUT = 3.3 µF
L = 150 mA
C
I
Temperature (°C)
Junction Temperature (°C)
FIGURE 2-7:
Supply Current vs. Junction
FIGURE 2-10:
Output Voltage vs. Junction
Temperature.
Temperature (150 mA).
0.5
0.3
2.705
2.7
2.695
2.69
2.685
2.68
2.675
2.67
2.665
TA = +25°C
TA = -45°C
TA = -45°C
TA = +25°C
0.1
-0.1
TA = +125°C
VR = 2.7V
VR = 2.7V
-0.3
-0.5
COUT = 3.3 µF
IL = 150 mA
COUT = 3.3 µF
TA = +125°C
IL = 150 mA
3.7
4
4.3
4.6
4.9
5.2
5.5
5.8
3.7
4
4.3 4.6 4.9 5.2 5.5 5.8
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-8:
Load Regulation vs. Supply
FIGURE 2-11:
Output Voltage vs. Supply
Voltage.
Voltage.
2.690
2.688
2.686
2.684
2.682
2.680
2.678
2.676
2.674
2.672
2.670
0.160
VR = 2.7V
COUT = 3.3 µF
IL = 150 mA
VIN = 6.0V
0.120
0.080
0.040
0.000
VIN = 3.7V
IL = 100 mA
IL = 50 mA
IL = 20 mA
VR = 2.7V
C
OUT = 3.3 µF
I
L = 0.1 mA
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-9:
Output Voltage vs. Junction
FIGURE 2-12:
Dropout Voltage vs.
Temperature (0.1 mA).
Junction Temperature.
2003 Microchip Technology Inc.
DS21662C-page 5
TC2014/2015/2185
Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C
= 3.3 µF, SHDN > V , T = +25°C.
IH A
IN
R
L
OUT
60
57
54
51
48
45
0.12
0.10
0.08
0.06
0.04
0.02
0.00
VR = 5.0V
COUT = 3.3 µF
VIN = 6.0V
IL = 150 mA
IL = 100 mA
IL = 50 mA
VR = 5.0V
OUT = 3.3 µF
C
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-13:
Supply Current vs. Junction
FIGURE 2-16:
Dropout Voltage vs.
Temperature.
Junction Temperature.
V
V
C
= 3.8V
= 2.8V
= 1 µF Ceramic
5.01
5.00
4.99
4.98
4.97
4.96
4.95
4.94
4.93
IN
OUT
IN
IL = 150 mA
C
= 1 µF Ceramic
OUT
Frequency = 1 kHz
V
OUT
100mV/DIV
IL = 100 mA
IL = 0.1 mA
VR = 5.0V
COUT = 3.3 µF
IN = 6.0V
V
Load Current
150mA
Load
100mA
Junction Temperature (°C)
FIGURE 2-14:
Output Voltage vs. Junction
FIGURE 2-17:
(C = 1 µF).
Load Transient Response.
Temperature (150 mA).
OUT
V
V
C
C
= 3.0V
IN
0.40
0.30
= 2.8V
OUT
= 1 µF Ceramic
= 10 µF Ceramic
IN
IL = 150 mA
OUT
Frequency = 10 kHz
0.20
0.10
0.00
-0.10
-0.20
-0.30
-0.40
100mV / DIV
V
OUT
IL = 100 mA
IL = 50 mA
VR = 5.0V
C
OUT = 3.3 µF
Load Current
VIN = 6.0 V
150mA
Load
100mA
Junction Temperature (°C)
FIGURE 2-15:
Load Regulation vs.
FIGURE 2-18:
(C = 10 µF).
Load Transient Response.
Junction Temperature.
OUT
DS21662C-page 6
2003 Microchip Technology Inc.
TC2014/2015/2185
Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C
= 3.3 µF, SHDN > V , T = +25°C.
IH A
IN
R
L
OUT
FIGURE 2-19:
(C = 1 µF).
Line Transient Response.
FIGURE 2-22:
Wake-Up Response.
OUT
0
VIN = 4.0V
VINAC = 100 mV
OUTDC = 3.0V
COUT = 1µF Ceramic
V
OUT
-10
-20
-30
-40
-50
-60
-70
CBYPASS = 0.01 µF Ceramic
100mV/DIV
V
150mA
IOUT = 150 mA
IOUT = 100 mA
IOUT = 50 mA
100mA
V
V
= 3.105V
IN
= 3.006V
OUT
C
C
R
= 1 µF Ceramic
IN
10
100
1k
10k
100k
1M
= 10 µF Ceramic
OUT
LOAD
= 20 Ω
0
Frequency (Hz)
FIGURE 2-20:
Dropout. (C
Load Transient Response in
FIGURE 2-23:
(C
PSRR vs. Frequency
= 10 µF).
= 1 µF Ceramic).
OUT
OUT
0
-10
-20
-30
-40
-50
-60
-70
VIN = 4.0V
COUT = 10 µF Ceramic
CBYPASS = 0.01 µF Ceramic
V
V
INAC = 100 mV
OUTDC = 3.0V
IOUT = 150 mA
IOUT = 100 mA
10
100
1k
10k
100k
1M
0
Frequency (Hz)
FIGURE 2-21:
Shutdown Delay Time.
FIGURE 2-24:
(C
PSRR vs. Frequency
= 10 µF Ceramic).
OUT
2003 Microchip Technology Inc.
DS21662C-page 7
TC2014/2015/2185
Note: Unless otherwise indicated, V = V + 1V, I = 100 µA, C
= 3.3 µF, SHDN > V , T = +25°C.
IH A
IN
R
L
OUT
10
0
-10
-20
-30
-40
-50
-60
-70
VIN = 4.0V
VIN = 4.0V
COUT = 10 µF Tantalum
IOUT = 150 mA
VOUTDC = 3.0V
IOUT = 100 µA
CBYPASS = 470 pF
VINAC = 100 mV
VOUTDC = 3.0V
1
CBYPASS = 0 µF
0.1
COUT = 10 µF
COUT = 1 µF
CBYPASS = 0.01 µF
0.10
10
1
100
1k
10k
100k
1M
0.001
100
1k
10k
100k
1M
10
Frequency (Hz)
Frequency (Hz)
FIGURE 2-25:
(C
PSRR vs. Frequency
FIGURE 2-26:
Output Noise vs. Frequency.
= 10 µF Tantalum).
OUT
DS21662C-page 8
2003 Microchip Technology Inc.
TC2014/2015/2185
3.3
Shutdown Control Input (SHDN)
3.0
PIN DESCRIPTIONS
The regulator is fully enabled when a logic high is
applied to SHDN. The regulator enters shutdown when
a logic low is applied to this input. During shutdown,
output voltage falls to zero and supply current is
reduced to 0.5 µA (max).
The descriptions of the pins are described in Table 3-1.
TABLE 3-1:
Pin No.
PIN FUNCTION TABLE
Symbol
Description
1
2
3
4
5
V
Unregulated supply input
Ground terminal
Shutdown control input
Reference bypass input
Regulated voltage output
IN
3.4
Reference Bypass Input (Bypass)
GND
SHDN
Bypass
Connecting a low value ceramic capacitor to this pin
will further reduce output voltage noise and improve the
Power Supply Ripple Rejection (PSRR) performance
of the LDO. Typical values from 470 pF to 0.01 µF are
suggested. Smaller and larger values can be used but
do affect the speed at which the LDO output voltage
rises when input power is applied. The larger the
bypass capacitor, the slower the output voltage will
rise.
V
OUT
3.1
Unregulated Supply Input (V )
IN
Connect unregulated input supply to the V pin. If
IN
there is a large distance between the input supply and
the LDO regulator some input capacitance is neces-
sary for proper operation. A 1 µF capacitor connected
3.5
Regulated Voltage Output (V
)
OUT
of the LDO. Also con-
from
V
to ground is recommended for most
IN
applications.
Connect the output load to V
nect one side of the LDO output de coupling capacitor
as close as possible to the V pin.
OUT
3.2
Ground Terminal (GND)
OUT
Connect the unregulated input supply ground return to
GND. Also connect one side of the 1 µF typical input
decoupling capacitor close to this pin and one side of
the output capacitor C
to this pin.
OUT
2003 Microchip Technology Inc.
DS21662C-page 9
TC2014/2015/2185
4.1
Bypass Input
4.0
DETAILED DESCRIPTION
A 0.01 µF ceramic capacitor connected from the
Bypass input to ground reduces noise present on the
internal reference, which in turn significantly reduces
output noise. If output noise is not a concern, this input
may be left unconnected. Larger capacitor values may
be used, but the result is a longer time period to rated
output voltage when power is initially applied.
The TC2014, TC2015 and TC2185 are precision fixed
output voltage regulators (If an adjustable version is
needed, see the TC1070, TC1071 or TC1187
(DS21353) datasheet.) Unlike bipolar regulators, the
TC2014, TC2015 and TC2185 supply current does not
increase with load current. In addition, the LDO output
voltage is stable using 1 µF of ceramic or tantalum
capacitance over the entire specified input voltage
range and output current range.
4.2
Output Capacitor
Figure 4-1 shows a typical application circuit. The reg-
ulator is enabled any time the shutdown input (SHDN)
A 1 µF (min) capacitor from V
to ground is required.
OUT
The output capacitor should have an esr (effective
series resistance) of 0.01Ω to 5Ω for V ≥ 2.5V, and
is at or above V , and disabled (shutdown) when
IH
OUT
SHDN is at or below V . SHDN may be controlled by a
0.05Ω. to 5Ω for V
< 2.5V. Ceramic, tantalum or alu-
IL
OUT
CMOS logic gate or I/O port of a microcontroller. If the
SHDN input is not required, it should be connected
directly to the input supply. While in shutdown, supply
minum electrolytic capacitors can be used. When using
ceramic capacitors, X5R and X7R dielectric material
are recommended due to their stable tolerance over
temperature. However, other dielectrics can be used as
long as the minimum output capacitance is maintained.
current decreases to 0.05 µA (typical) and V
zero volts.
falls to
OUT
4.3
Input Capacitor
1
5
VOUT
A 1 µF capacitor should be connected from V to GND
VOUT
VIN
IN
if there is more than 10 inches of wire between the reg-
ulator and this AC filter capacitor, or if a battery is used
as the power source. Aluminum, electrolytic or tanta-
lum capacitors can be used (Since many aluminum
electrolytic capacitors freeze at approximately -30°C,
solid tantalum are recommended for applications oper-
ating below -25°C). When operating from sources other
than batteries, supply-noise rejection and transient
response can be improved by increasing the value of
the input and output capacitors and employing passive
filtering techniques.
+
+
+
1 µF
1 µF
Battery
2
TC2014
GND
TC2015
TC2185
3
4
SHDN
Bypass
0.01 µF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
FIGURE 4-1:
Typical Application Circuit.
DS21662C-page 10
2003 Microchip Technology Inc.
TC2014/2015/2185
The P equation can be used in conjunction with the
5.0
5.1
THERMAL CONSIDERATIONS
Power Dissipation
D
P
equation to ensure regulator thermal operation
DMAX
is within limits. For example:
The amount of power the regulator dissipates is prima-
rily a function of input voltage, output voltage and
output current.
The following equation is used to calculate worst-case
power dissipation:
Given:
V
V
I
= 3.0V +10%
= 2.7V – 2.5%
= 40 mA
= +125°C
= +55°C
INMAX
OUTMIN
LOADMAX
T
T
JMAX
EQUATION
AMAX
P
≈ (VINMAX – VOUTMIN)ILMAX
D
Find:
Where:
1. Actual power dissipation
P
= Worst-case actual power dissipation
= Maximum voltage on V
= Minimum regulator output voltage
= Maximum output (load) current
2. Maximum allowable dissipation
D
V
V
INMAX
OUTMIN
LMAX
IN
Actual power dissipation:
I
PD = (VINMAX – VOUTMIN)ILMAX
The maximum allowable power dissipation (P
) is
[(3.0 × 1.1) – (2.7 × 0.975)]40 × 10–3
DMAX
--------------------------------------------------------------------------------------------
a function of the maximum ambient temperature
=
220
(T
(T
), the maximum allowable die temperature
AMAX
= 26.7mW
) (+125°C) and the thermal resistance from junc-
JMAX
tion-to-air (θ ). The 5-Pin SOT-23A package has a θ
JA
JA
of approximately 220°C/Watt when mounted on a
typical two layer FR4 dielectric copper clad PC board.
Maximum allowable power dissipation:
T
JMAX – TAMAX
--------------------------------------
PDMAX
=
=
θJA
EQUATION
T
JMAX – TAMAX
125 – 55
--------------------
--------------------------------------
=
PDMAX
220
θJA
= 318mW
Where all terms are previously defined.
In this example, the TC2014 dissipates a maximum of
only 26.7 mW; far below the allowable limit of 318 mW.
In a similar manner, the P equation and P
equa-
DMAX
D
tion can be used to calculate maximum current and/or
input voltage limits.
5.2
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads and wide power
supply bus lines combine to lower θ and, therefore,
JA
increase the maximum allowable power dissipation
limit.
2003 Microchip Technology Inc.
DS21662C-page 11
TC2014/2015/2185
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
cdef
c&d represents part number code + temperature
range and voltage
(V)
TC2014
TC2015
TC2185
1.8
2.5
2.7
2.8
2.85
3.0
3.3
PA
PB
PC
PD
PE
PF
PG
RA
RB
RC
RD
RE
RF
RG
UA
UB
UC
UD
UE
UF
UG
represents year and 2-month period code
represents lot ID number
e
f
DS21662C-page 12
2003 Microchip Technology Inc.
TC2014/2015/2185
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
E
E1
p
B
p1
D
n
1
α
c
A
A2
φ
A1
L
β
Units
Dimension Limits
INCHES*
NOM
MILLIMETERS
MIN
MAX
MIN
NOM
MAX
n
p
p1
A
A2
A1
E
E1
D
L
φ
c
B
α
β
Number of Pins
Pitch
Outside lead pitch (basic)
Overall Height
Molded Package Thickness
5
5
.038
.075
.046
.043
.003
.110
.064
.116
.018
5
0.95
1.90
1.18
1.10
0.08
2.80
1.63
2.95
0.45
5
.035
.035
.000
.102
.059
.110
.014
0
.057
0.90
1.45
.051
.006
.118
.069
.122
.022
10
.008
.020
10
0.90
0.00
2.60
1.50
2.80
0.35
0
0.09
0.35
0
1.30
0.15
3.00
1.75
3.10
0.55
10
0.20
0.50
10
Standoff
§
Overall Width
Molded Package Width
Overall Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
.004
.014
0
.006
.017
5
0.15
0.43
5
Mold Draft Angle Top
Mold Draft Angle Bottom
0
5
10
0
5
10
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MO-178
Drawing No. C04-091
2003 Microchip Technology Inc.
DS21662C-page 13
TC2014/2015/2185
NOTES:
DS21662C-page 14
2003 Microchip Technology Inc.
TC2014/2015/2185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
Device
-XX
X
XXXX
a)
b)
c)
TC2014-1.8VCTTR:5LD SOT-23-A, 1.8V,
Output
Voltage
Temperature
Range
Package
Tape and Reel.
TC2014-2.85VCTTR: 5LD SOT-23-A,
2.85V, Tape and Reel.
TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V,
Tape and Reel.
Device:
TC2014: 50 mA LDO with Shutdown and VREF Bypass
TC2015: 100 mA LDO with Shutdown and VREF Bypass
TC2185: 150 mA LDO with Shutdown and VREF Bypass
a)
b)
c)
TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
TC2015-2.85VCTTR: 5LD SOT-23-A,
2.85V, Tape and Reel.
TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V,
Tape and Reel.
Output Voltage:
XX
XX
XX
XX
XX
=
=
=
=
=
1.8V
2.7V
2.8V
3.0V
3.3V
a)
b)
TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V,
Tape and Reel.
TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V,
Tape and Reel.
Temperature Range:
Package:
V
=
-40°C to +125°C
CTTR
=
Plastic Small Outline Transistor (SOT-23),
5-lead, Tape and Reel
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2003 Microchip Technology Inc.
DS21662C-page15
TC2014/2015/2185
NOTES:
DS21662C-page 16
2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such
acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications. No
representation or warranty is given and no liability is assumed
by Microchip Technology Incorporated with respect to the
accuracy or use of such information, or infringement of patents
or other intellectual property rights arising from such use or
otherwise. Use of Microchip’s products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART, PRO MATE and
PowerSmart are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are registered
trademarks of Microchip Technology Incorporated in the U.S.A.
Accuron, dsPIC, dsPICDEM.net, ECONOMONITOR,
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming,
ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net,
PowerCal, PowerInfo, PowerTool, rfPIC, Select Mode,
SmartSensor, SmartShunt, SmartTel and Total Endurance are
trademarks of Microchip Technology Incorporated in the U.S.A.
and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark of
Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2003, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
®
PICmicro 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2003 Microchip Technology Inc.
DS21662C - page 17
M
WORLDWIDE SALES AND SERVICE
Japan
AMERICAS
ASIA/PACIFIC
Microchip Technology Japan K.K.
Benex S-1 6F
Corporate Office
Australia
2355 West Chandler Blvd.
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Korea
China - Beijing
Rocky Mountain
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
Bei Hai Wan Tai Bldg.
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Singapore
3780 Mansell Road, Suite 130
Alpharetta, GA 30022
Microchip Technology Singapore Pte Ltd.
200 Middle Road
Tel: 770-640-0034 Fax: 770-640-0307
China - Chengdu
#07-02 Prime Centre
Boston
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401-2402, 24th Floor,
Singapore, 188980
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Ming Xing Financial Tower
Microchip Technology (Barbados) Inc.,
Taiwan Branch
No. 88 TIDU Street
Chicago
Chengdu 610016, China
333 Pierce Road, Suite 180
Itasca, IL 60143
11F-3, No. 207
Tel: 86-28-86766200 Fax: 86-28-86766599
Tung Hua North Road
Taipei, 105, Taiwan
China - Fuzhou
Tel: 630-285-0071 Fax: 630-285-0075
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
EUROPE
Austria
No. 71 Wusi Road
Tel: 972-818-7423 Fax: 972-818-2924
Fuzhou 350001, China
Microchip Technology Austria GmbH
Durisolstrasse 2
Detroit
Tel: 86-591-7503506 Fax: 86-591-7503521
Tri-Atria Office Building
China - Hong Kong SAR
A-4600 Wels
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Kwai Fong, N.T., Hong Kong
Kokomo
Tel: 852-2401-1200 Fax: 852-2401-3431
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
Los Angeles
Room 701, Bldg. B
18201 Von Karman, Suite 1090
Irvine, CA 92612
Far East International Plaza
No. 317 Xian Xia Road
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Tel: 949-263-1888 Fax: 949-263-1338
Shanghai, 200051
San Jose
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
China - Shenzhen
Batiment A - ler Etage
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Tel: 408-436-7950 Fax: 408-436-7955
Rm. 1812, 18/F, Building A, United Plaza
No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Germany
Toronto
Microchip Technology GmbH
Steinheilstrasse 10
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
Tel: 86-755-82901380 Fax: 86-755-82966626
D-85737 Ismaning, Germany
China - Qingdao
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Rm. B503, Fullhope Plaza,
Italy
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Microchip Technology SRL
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Tel: 86-532-5027355 Fax: 86-532-5027205
India
Milan, Italy
Microchip Technology Inc.
India Liaison Office
Tel: 39-039-65791-1 Fax: 39-039-6899883
Divyasree Chambers
United Kingdom
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
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Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
12/05/02
DS21662C-page 18
2003 Microchip Technology Inc.
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