TC7660IOA713 [MICROCHIP]
Charge Pump DC-to-DC Voltage Converter; 电荷泵DC - DC电压转换器
| 型号： | TC7660IOA713 |
| 厂家： | 
MICROCHIP |
| 描述： | Charge Pump DC-to-DC Voltage Converter |
| 文件： | 总18页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC7660
M
Charge Pump DC-to-DC Voltage Converter
Features
Package Types
• Wide Input Voltage Range: +1.5V to +10V
• Efficient Voltage Conversion (99.9%, typ)
• Excellent Power Efficiency (98%, typ)
• Low Power Consumption: 80 µA (typ) @ V = 5V
• Low Cost and Easy to Use
- Only Two External Capacitors Required
• Available in 8-Pin Small Outline (SOIC), 8-Pin
PDIP and 8-Pin CERDIP Packages
PDIP/CERDIP/SOIC
V+
NC
1
2
3
4
8
7
6
5
IN
CAP+
GND
OSC
TC7660
LOW
VOLTAGE (LV)
CAP-
VOUT
• Improved ESD Protection (3 kV HBM)
• No External Diode Required for High-Voltage
Operation
General Description
The TC7660 is a pin-compatible replacement for the
industry standard 7660 charge pump voltage
converter. It converts a +1.5V to +10V input to a
corresponding -1.5V to -10V output using only two low
cost capacitors, eliminating inductors and their
associated cost, size and electromagnetic interference
(EMI).
Applications
• RS-232 Negative Power Supply
• Simple Conversion of +5V to ±5V Supplies
• Voltage Multiplication V
• Negative Supplies for Data Acquisition Systems
and Instrumentation
+
= ± n V
OUT
The on-board oscillator operates at
a nominal
frequency of 10 kHz. Operation below 10 kHz (for
lower supply current applications) is possible by
connecting an external capacitor from OSC to ground.
The TC7660 is available in 8-Pin PDIP, 8-Pin Small
Outline (SOIC) and 8-Pin CERDIP packages in
commercial and extended temperature ranges.
Functional Block Diagram
+
+
V CAP
8
2
Voltage
Level
7
6
RC
4
5
OSC
LV
÷
2
CAP-
Oscillator
Translator
V
OUT
n
t
e
r
n
a
l
Voltage
Regulator
Logic
Network
TC7660
3
GND
2002 Microchip Technology Inc.
DS21465B-page 1
TC7660
1.0 ELECTRICAL
* Notice: Stresses above those listed under "Maximum Rat-
ings" may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
CHARACTERISTICS
Absolute Maximum Ratings*
Supply Voltage .............................................................+10.5V
LV and OSC Inputs Voltage: (Note 1)
.............................................. -0.3V to VSS for V+ < 5.5V
.....................................(V+ – 5.5V) to (V+) for V+ > 5.5V
Current into LV .........................................20 µA for V+ > 3.5V
IS
Output Short Duration (VSUPPLY ≤ 5.5V)...............Continuous
Package Power Dissipation: (TA ≤ 70°C)
1
2
3
4
8
7
6
5
V+
IL
COSC
8-Pin CERDIP ....................................................800 mW
8-Pin PDIP .........................................................730 mW
8-Pin SOIC.........................................................470 mW
(+5V)
+
TC7660
C1
10 µF
RL
Operating Temperature Range:
C Suffix.......................................................0°C to +70°C
I Suffix .....................................................-25°C to +85°C
E Suffix....................................................-40°C to +85°C
M Suffix .................................................-55°C to +125°C
VOUT
C2
10 µF
+
Storage Temperature Range.........................-65°C to +160°C
ESD protection on all pins (HBM) .................................≥ 3 kV
Maximum Junction Temperature.................................. 150°C
FIGURE 1-1:
TC7660 Test Circuit.
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, specifications measured over operating temperature range with V+ = 5V,
C
OSC = 0, refer to test circuit in Figure 1-1.
Parameters
Sym
Min
Typ
Max
Units
µA RL = ∞
Conditions
+
Supply Current
—
3.0
1.5
—
—
—
80
—
—
70
—
—
104
150
180
10
3.5
100
120
130
150
300
I
V
V
+
Supply Voltage Range, High
Supply Voltage Range, Low
Output Source Resistance
V
V
Ω
Min ≤ TA ≤ Max, RL = 10 kΩ, LV Open
Min ≤ TA ≤ Max, RL = 10 kΩ, LV to GND
IOUT=20 mA, TA = +25°C
H
+
L
R
OUT
IOUT=20 mA, TA ≤ +70°C (C Device)
IOUT=20 mA, TA ≤ +85°C (E and I Device)
IOUT=20 mA, TA ≤ +125°C (M Device)
—
—
V+ = 2V, IOUT = 3 mA, LV to GND
0°C ≤ TA ≤ +70°C
—
160
600
V+ = 2V, IOUT = 3 mA, LV to GND
-55°C ≤ TA ≤ +125°C (M Device)
Oscillator Frequency
Power Efficiency
—
10
98
—
—
kHz Pin 7 open
f
P
OSC
95
%
RL = 5 kΩ
EFF
Voltage Conversion Efficiency
Oscillator Impedance
97
—
—
99.9
1.0
100
—
—
—
%
RL = ∞
V
OUTEFF
MΩ V+ = 2V
kΩ V+ = 5V
Z
OSC
Note 1: Destructive latch-up may occur if voltages greater than V+ or less than GND are supplied to any input pin.
DS21465B-page 2
2002 Microchip Technology Inc.
TC7660
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, C = C = 10 µF, ESR = ESR = 1 Ω, T = 25°C. See Figure 1-1.
1
2
C1
C2
A
12
100
98
96
10
I
= 1 mA
OUT
OUT
94
92
8
6
I
= 15 mA
90
88
86
84
82
SUPPLY VOLTAGE RANGE
4
2
+
V
= +5V
80
100
0
1k
10k
-55 -25
0
+25 +50 +75 +100 +125
OSCILLATOR FREQUENCY (Hz)
TEMPERATURE (C)
FIGURE 2-1:
Operating Voltage vs.
FIGURE 2-4:
Power Conversion
Temperature.
Efficiency vs. Oscillator Frequency.
500
10k
I
= 1 mA
OUT
450
400
1k
200
150
100
50
+
V
V
= +2V
= +5V
100Ω
10Ω
+
0
0
1
2
3
4
5
6
7
8
-55 -25
0
+25 +50 +75 +100 +125
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
FIGURE 2-2:
Output Source Resistance
FIGURE 2-5:
Output Source Resistance
vs. Supply Voltage.
vs. Temperature.
20
+
10k
+
V
= +5V
V
= +5V
18
16
14
1k
100
10
12
10
8
6
1
10
100
1000
10k
-55 -25
0
+25 +50 +75 +100 +125
OSCILLATOR CAPACITANCE (pF)
TEMPERATURE (°C)
FIGURE 2-3:
Frequency of Oscillation vs.
FIGURE 2-6:
Unloaded Oscillator
Oscillator Capacitance.
Frequency vs. Temperature.
2002 Microchip Technology Inc.
DS21465B-page 3
TC7660
Note: Unless otherwise indicated, C = C = 10 µF, ESR = ESR = 1 Ω, T = 25°C. See Figure 1-1.
1
2
C1
C2
A
0
-1
-2
-3
-4
-5
-6
-7
5
4
+
V
= +5V
3
2
1
0
-1
-2
-3
-4
-8
SLOPE 55Ω
-9
LV OPEN
-10
-5
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
0
10 20 30 40 50 60 70
LOAD CURRENT (mA)
80
FIGURE 2-7:
Output Voltage vs. Output
FIGURE 2-10:
Output Voltage vs. Load
Current.
Current.
100
90
100
90
100
90
20
+
V
= 2V
18
16
80
80
80
70
60
50
70
60
50
70
60
50
14
12
10
40
30
20
10
40
30
20
40
30
20
10
8
6
4
2
0
10
+
V
= +5V
50
0
0
10
20
30
40
60
0
1.5
3.0
4.5
6.0
7.5 9.0
LOAD CURRENT (mA)
LOAD CURRENT (mA)
FIGURE 2-8:
Supply Current and Power
FIGURE 2-11:
Supply Current and Power
Conversion Efficiency vs. Load Current.
Conversion Efficiency vs. Load Current.
2
+
V
= +2V
1
0
-1
SLOPE 150Ω
-2
0
1
2
3
4
5
6
7
8
LOAD CURRENT (mA)
FIGURE 2-9:
Output Voltage vs. Load
Current.
DS21465B-page 4
2002 Microchip Technology Inc.
TC7660
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
Symbol
Description
1
2
3
4
5
6
7
8
NC
CAP+
GND
CAP-
VOUT
LV
No connection
Charge pump capacitor positive terminal
Ground terminal
Charge pump capacitor negative terminal
Output voltage
Low voltage pin. Connect to GND for V+ < 3.5V
OSC
V+
Oscillator control input. Bypass with an external capacitor to slow the oscillator
Power supply positive voltage input
+
3.1
Charge Pump Capacitor (CAP )
3.5
Low Voltage Pin (LV)
Positive connection for the charge pump capacitor, or
flying capacitor, used to transfer charge from the input
source to the output. In the voltage-inverting configura-
tion, the charge pump capacitor is charged to the input
voltage during the first half of the switching cycle. Dur-
ing the second half of the switching cycle, the charge
pump capacitor is inverted and charge is transferred to
the output capacitor and load.
The low voltage pin ensures proper operation of the
internal oscillator for input voltages below 3.5V. The low
voltage pin should be connected to ground (GND) for
input voltages below 3.5V. Otherwise, the low voltage
pin should be allowed to float.
3.6
Oscillator Control Input (OSC)
The oscillator control input can be utilized to slow down
or speed up the operation of the TC7660. Refer to
Section 5.4, “Changing the TC7660 Oscillator
Frequency”, for details on altering the oscillator
frequency.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output resistance.
3.2
Ground (GND)
+
3.7
Power Supply (V )
Input and output zero volt reference.
Positive power supply input voltage connection. It is
recommended that a low ESR (equivalent series resis-
tance) capacitor be used to bypass the power supply
input to ground (GND).
-
3.3
Charge Pump Capacitor (CAP )
Negative connection for the charge pump capacitor, or
flying capacitor, used to transfer charge from the input
to the output. Proper orientation is imperative when
using a polarized capacitor.
3.4
Output Voltage (V
)
OUT
Negative connection for the charge pump output
capacitor. In the voltage-inverting configuration, the
charge pump output capacitor supplies the output load
during the first half of the switching cycle. During the
second half of the switching cycle, charge is restored to
the charge pump output capacitor.
It is recommended that a low ESR (equivalent series
resistance) capacitor be used. Additionally, larger
values will lower the output ripple.
2002 Microchip Technology Inc.
DS21465B-page 5
TC7660
EQUATION
4.0
DETAILED DESCRIPTION
1
-----------------------------
ROUT
=
+ 8RSW + 4ESRC1 + ESRC2
4.1
Theory of Operation
f
PUMP × C1
The TC7660 charge pump converter inverts the voltage
+
applied to the V pin. The conversion consists of a two-
Where:
phase operation (Figure 4-1). During the first phase,
switches S and S are open and switches S and S
fOSC
----------
2
fPUMP
=
2
4
1
3
+
are closed. C charges to the voltage applied to the V
1
RSW = on-resistance of the switches
ESRC1 = equivalent series resistance of C
ESRC2 = equivalent series resistance of C
pin, with the load current being supplied from C . Dur-
2
ing the second phase, switches S and S are closed
1
2
2
4
and switches S and S are open. Charge is trans-
1
3
ferred from C to C , with the load current being
1
2
supplied from C .
1
4.2
Switched Capacitor Inverter
Power Losses
S
S
2
1
+
V
The overall power loss of a switched capacitor inverter
is affected by four factors:
+
C
1
1. Losses from power consumed by the internal
oscillator, switch drive, etc. These losses will
vary with input voltage, temperature and
oscillator frequency.
+
C
2
GND
S
S
3
4
V
= -V
IN
2. Conduction losses in the non-ideal switches.
OUT
3. Losses due to the non-ideal nature of the
external capacitors.
4. Losses that occur during charge transfer from
C to C when a voltage difference between the
1
2
capacitors exists.
FIGURE 4-1:
Ideal Switched Capacitor
Figure 4-3 depicts the non-ideal elements associated
with the switched capacitor inverter power loss.
Inverter.
In this manner, the TC7660 performs a voltage inver-
sion, but does not provide regulation. The average out-
put voltage will drop in a linear manner with respect to
load current. The equivalent circuit of the charge pump
inverter can be modeled as an ideal voltage source in
series with a resistor, as shown in Figure 4-2.
S
S
2
1
R
R
SW
SW
+
+
+
+
-
V
I
DD
C
C
2
1
I
LOAD
OUT
ESR
ESR
S
R
OUT
C1
3
C2
4
V
OUT
S
-
R
SW
R
SW
+
V
+
FIGURE 4-3:
Capacitor Inverter.
The power loss is calculated using the following
equation:
Non-Ideal Switched
FIGURE 4-2:
Switched Capacitor Inverter
Equivalent Circuit Model.
The value of the series resistor (R
) is a function of
OUT
the switching frequency, capacitance and equivalent
EQUATION
series resistance (ESR) of C and C and the on-resis-
1
2
PLOSS = I2OUT × ROUT + IDD × V+
tance of switches S , S , S and S . A close
1
OUT
2
3
4
approximation for R
equation:
is given in the following
DS21465B-page 6
2002 Microchip Technology Inc.
TC7660
5.2
Paralleling Devices
5.0
5.1
APPLICATIONS INFORMATION
To reduce the value of R
, multiple TC7660 voltage
OUT
Simple Negative Voltage
Converter
converters can be connected in parallel (Figure 5-2).
The output resistance will be reduced by approximately
a factor of n, where n is the number of devices
connected in parallel.
Figure 5-1 shows typical connections to provide a
negative supply where a positive supply is available. A
similar scheme may be employed for supply voltages
anywhere in the operating range of +1.5V to +10V,
keeping in mind that pin 6 (LV) is tied to the supply
negative (GND) only for supply voltages below 3.5V.
EQUATION
R
OUT (of TC7660)
---------------------------------------------------
=
ROUT
n (number of devices)
V+
While each device requires its own pump capacitor
(C ), all devices may share one reservoir capacitor
1
1
2
3
4
8
7
6
5
(C ). To preserve ripple performance, the value of C
2
2
VOUT
C2
10 µF
*
should be scaled according to the number of devices
connected in parallel.
+
TC7660
C1
10 µF
+
5.3
Cascading Devices
* VOUT = -V+ for 1.5V ≤ V+ ≤ 10V
A larger negative multiplication of the initial supply volt-
age can be obtained by cascading multiple TC7660
devices. The output voltage and the output resistance
will both increase by approximately a factor of n, where
n is the number of devices cascaded.
FIGURE 5-1:
Simple Negative Converter.
The output characteristics of the circuit in Figure 5-1
are those of a nearly ideal voltage source in series with
a 70Ω resistor. Thus, for a load current of -10 mA and
a supply voltage of +5V, the output voltage would be
-4.3V.
EQUATION
VOUT = –n(V+)
ROUT = n × ROUT (of TC7660)
+
V
8
7
6
5
1
2
3
4
1
2
3
4
8
7
6
5
+
TC7660
R
C
L
1
+
TC7660
C
1
“1”
“n”
C
2
+
FIGURE 5-2:
Paralleling Devices Lowers Output Impedance.
+
V
8
7
6
5
1
2
3
4
8
1
2
3
4
+
TC7660
10 µF
7
6
5
+
TC7660
10 µF
+
“1”
VOUT
10 µF
*
“n”
+
10 µF
+
* V
= -n V for 1.5V ≤ V+ ≤ 10V
OUT
FIGURE 5-3:
Increased Output Voltage By Cascading Devices.
2002 Microchip Technology Inc.
DS21465B-page 7
TC7660
5.4
Changing the TC7660 Oscillator
5.5
Positive Voltage Multiplication
Frequency
Positive voltage multiplication can be obtained by
employing two external diodes (Figure 5-6). Refer to
the theory of operation of the TC7660 (Section 4.1).
The operating frequency of the TC7660 can be
changed in order to optimize the system performance.
The frequency can be increased by over-driving the
OSC input (Figure 5-4). Any CMOS logic gate can be
utilized in conjunction with a 1 kΩ series resistor. The
resistor is required to prevent device latch-up. While
TTL level signals can be utilized, an additional 10 kΩ
During the half cycle when switch S is closed, capaci-
2
tor C of Figure 5-6 is charged up to a voltage of
1
F1
+
V - V , where V is the forward voltage drop of diode
F1
D . During the next half cycle, switch S is closed, shift-
1
1
+
ing the reference of capacitor C from GND to V . The
1
+
energy in capacitor C is transferred to capacitor C
pull-up resistor to V is required. Transitions occur on
1
2
through diode D , producing an output voltage of
the rising edge of the clock input. The resultant output
voltage ripple frequency is one half the clock input.
Higher clock frequencies allow for the use of smaller
pump and reservoir capacitors for a given output volt-
age ripple and droop. Additionally, this allows the
TC7660 to be synchronized to an external clock, elimi-
nating undesirable beat frequencies.
2
approximately:
EQUATION
VOUT = 2 × V+ – (VF1 + VF2
)
where:
At light loads, lowering the oscillator frequency can
increase the efficiency of the TC7660 (Figure 5-5). By
lowering the oscillator frequency, the switching losses
are reduced. Refer to Figure 2-3 to determine the typi-
cal operating frequency based on the value of the
external capacitor. At lower operating frequencies, it
may be necessary to increase the values of the pump
and reservoir capacitors in order to maintain the
desired output voltage ripple and output impedance.
V
is the forward voltage drop of diode D
1
F1
and
V
is the forward voltage drop of diode D .
F2
2
+
V
1
2
3
4
8
V
=
7
6
5
OUT
+
D
1
TC7660
(2 V ) - (2 V )
D
F
2
+
V
+
V
+
+
1
2
3
4
8
7
6
5
C
C
2
1
1 kΩ
CMOS
GATE
+
TC7660
10 µF
FIGURE 5-6:
Positive Voltage Multiplier.
V
“1”
OUT
5.6
Combined Negative Voltage
Conversion and Positive Supply
Multiplication
10 µF
+
FIGURE 5-4:
External Clocking.
Simultaneous voltage inversion and positive voltage
multiplication can be obtained (Figure 5-7). Capacitors
C and C perform the voltage inversion, while capaci-
+
V
1
3
tors C and C , plus the two diodes, perform the posi-
8
7
1
2
4
C
OSC
tive voltage multiplication. Capacitors C and C are
1
3
2
4
2
the pump capacitors, while capacitors C and C are
+
TC7660
the reservoir capacitors for their respective functions.
Both functions utilize the same switches of the TC7660.
As a result, if either output is loaded, both outputs will
drop towards GND.
C
3
4
6
5
1
V
OUT
C
2
+
FIGURE 5-5:
Lowering Oscillator
Frequency.
DS21465B-page 8
2002 Microchip Technology Inc.
TC7660
V+
VOUT
= -V+
8
7
6
5
1
2
3
4
C3
+
TC7660
D1
D2
VOUT
=
+
(2 V+) - (2 VF)
C1
+
+
C2
C4
FIGURE 5-7:
Combined Negative
Converter And Positive Multiplier.
5.7
Efficient Positive Voltage
Multiplication/Conversion
Since the switches that allow the charge pumping
operation are bidirectional, the charge transfer can be
performed backwards as easily as forwards.
Figure 5-8 shows a TC7660 transforming -5V to +5V
(or +5V to +10V, etc.). The only problem here is that the
internal clock and switch-drive section will not operate
until some positive voltage has been generated. An ini-
tial inefficient pump, as shown in Figure 5-7, could be
used to start this circuit up, after which it will bypass the
other (D and D in Figure 5-7 would never turn on), or
1
2
else the diode and resistor shown dotted in Figure 5-8
can be used to "force" the internal regulator on.
VOUT = -V-
1
2
3
4
8
7
6
5
+
10 µF
1 MΩ
+
C1
TC7660
10 µF
V- input
FIGURE 5-8:
Positive Voltage
Conversion.
2002 Microchip Technology Inc.
DS21465B-page 9
TC7660
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
8-Lead PDIP (300 mil)
Example:
TC7660
XXXXXXXX
XXXXXNNN
CPA061
YYWW
0221
8-Lead CERDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
TC7660
MJA061
YYWW
0221
8-Lead SOIC (150 mil)
Example:
XXXXXXXX
XXXXYYWW
NNN
TC7660
COA0221
061
Legend: XX...X Customer specific information*
YY
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
WW
NNN
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please
check with your Microchip Sales Office.
DS21465B-page 10
2002 Microchip Technology Inc.
TC7660
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
B
p
eB
Units
Dimension Limits
INCHES*
NOM
MILLIMETERS
MIN
MAX
MIN
NOM
8
MAX
n
p
A
A2
A1
E
E1
D
L
c
B1
B
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
8
.100
.155
.130
2.54
3.94
3.30
.140
.170
.145
3.56
2.92
4.32
3.68
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
§
eB
α
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
2002 Microchip Technology Inc.
DS21465B-page 11
TC7660
8-Lead Ceramic Dual In-line – 300 mil (CERDIP)
Packaging diagram not available at this time.
DS21465B-page 12
2002 Microchip Technology Inc.
TC7660
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
A1
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
A
A2
A1
E
E1
D
Number of Pins
Pitch
Overall Height
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
1.27
.053
.069
1.35
1.32
1.55
1.42
0.18
6.02
3.91
4.90
0.38
0.62
4
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
Molded Package Thickness
Standoff
.052
.004
.228
.146
.189
.010
.019
0
.061
.010
.244
.157
.197
.020
.030
8
§
0.10
5.79
3.71
4.80
0.25
0.48
0
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
h
L
φ
c
Lead Thickness
Lead Width
.008
.013
0
.009
.017
12
.010
.020
15
0.20
0.33
0
0.23
0.42
12
0.25
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
2002 Microchip Technology Inc.
DS21465B-page 13
TC7660
NOTES:
DS21465B-page 14
2002 Microchip Technology Inc.
TC7660
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
Device
X
/XX
a)
b)
c)
d)
e)
f)
TC7660COA: Commercial Temp., SOIC
Temperature Package
Range
package.
TC7660COA713:Tape and Reel, Commercial
Temp., SOIC package.
TC7660CPA: Commercial Temp., PDIP
package.
Device:
TC7660: DC-to-DC Voltage Converter
TC7660EOA: Extended Temp., SOIC
package.
Temperature Range:
C
E
I
=
=
=
=
0°C to +70°C
TC7660EOA713:Tape and Reel, Extended
Temp., SOIC package.
-40°C to +85°C
-25°C to +85°C (CERDIP only)
-55°C to +125°C (CERDIP only)
TC7660EPA: Extended Temp., PDIP
package.
M
g)
h)
TC7660IJA: Industrial Temp., CERDIP
package
Package:
PA
JA
=
=
=
Plastic DIP, (300 mil body), 8-lead
Ceramic DIP, (300 mil body), 8-lead
SOIC (Narrow), 8-lead
TC7660MJA: Military Temp., CERDIP
package.
OA
OA713 = SOIC (Narrow), 8-lead (Tape and Reel)
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21465B-page15
TC7660
NOTES:
DS21465B-page 16
2002 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowl-
edge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART and PRO MATE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
®
PICmicro 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21465B - page 17
M
WORLDWIDE SALES AND SERVICE
Japan
AMERICAS
ASIA/PACIFIC
Microchip Technology Japan K.K.
Benex S-1 6F
Corporate Office
Australia
2355 West Chandler Blvd.
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Korea
China - Beijing
Rocky Mountain
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
Bei Hai Wan Tai Bldg.
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Singapore
3780 Mansell Road, Suite 130
Alpharetta, GA 30022
Microchip Technology Singapore Pte Ltd.
200 Middle Road
Tel: 770-640-0034 Fax: 770-640-0307
China - Chengdu
#07-02 Prime Centre
Boston
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401-2402, 24th Floor,
Singapore, 188980
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Ming Xing Financial Tower
Microchip Technology (Barbados) Inc.,
Taiwan Branch
No. 88 TIDU Street
Chicago
Chengdu 610016, China
333 Pierce Road, Suite 180
Itasca, IL 60143
11F-3, No. 207
Tel: 86-28-86766200 Fax: 86-28-86766599
Tung Hua North Road
Taipei, 105, Taiwan
China - Fuzhou
Tel: 630-285-0071 Fax: 630-285-0075
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
EUROPE
Austria
No. 71 Wusi Road
Tel: 972-818-7423 Fax: 972-818-2924
Fuzhou 350001, China
Microchip Technology Austria GmbH
Durisolstrasse 2
Detroit
Tel: 86-591-7503506 Fax: 86-591-7503521
Tri-Atria Office Building
China - Shanghai
A-4600 Wels
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
Los Angeles
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 15-16, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
18201 Von Karman, Suite 1090
Irvine, CA 92612
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Tel: 949-263-1888 Fax: 949-263-1338
San Jose
Shenzhen 518001, China
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 86-755-82350361 Fax: 86-755-82366086
Batiment A - ler Etage
China - Hong Kong SAR
91300 Massy, France
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Tel: 408-436-7950 Fax: 408-436-7955
Germany
Toronto
Microchip Technology GmbH
Steinheilstrasse 10
Kwai Fong, N.T., Hong Kong
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
Tel: 852-2401-1200 Fax: 852-2401-3431
D-85737 Ismaning, Germany
India
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Microchip Technology Inc.
India Liaison Office
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
11/15/02
DS21465B-page 18
2002 Microchip Technology Inc.
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