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TN0104N3-GP002 [MICROCHIP]

SMALL SIGNAL, FET;
TN0104N3-GP002
型号： TN0104N3-GP002
厂家： MICROCHIP    MICROCHIP
描述：

SMALL SIGNAL, FET

开关 晶体管
文件： 总7页 (文件大小：730K)
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TN0104  
Supertex inc.  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
► Low threshold (1.6V max.)  
This low threshold, enhancement-mode (normally-off) transistor  
utilizes a vertical DMOS structure and Supertex’s well-proven,  
silicon-gate manufacturing process. This combination produces  
a device with the power handling capabilities of bipolar  
transistors and with the high input impedance and positive  
temperature coefficient inherent in MOS devices. Characteristic  
of all MOS structures, this device is free from thermal runaway  
and thermally-induced secondary breakdown.  
► High input impedance  
► Low input capacitance  
► Fast switching speeds  
► Low on-resistance  
► Free from secondary breakdown  
► Low input and output leakage  
Applications  
► Logic level interfaces – ideal for TTL and CMOS  
► Solid state relays  
► Battery operated systems  
► Photo voltaic drives  
► Analog switches  
► General purpose line drivers  
► Telecom switches  
Supertex’s vertical DMOS FETs are ideally suited to a wide  
range of switching and amplifying applications where very  
low threshold voltage, high breakdown voltage, high input  
impedance, low input capacitance, and fast switching speeds  
are desired.  
Ordering Information  
Product Summary  
RDS(ON)  
(max)  
IDSS  
(min)  
Part Number  
Package Option  
Packing  
BVDSX/BVDGX  
TN0104N3-G  
TO-92  
1000/Bag  
40V  
1.8Ω  
2.0A  
TN0104N3-G P002  
TN0104N3-G P003  
TN0104N3-G P005  
TN0104N3-G P013  
TN0104N3-G P014  
TN0104N8-G  
Pin Configuration  
TO-92  
2000/Reel  
2000/Reel  
DRAIN  
TO-243AA (SOT-89)  
DRAIN  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
SOURCE  
SOURCE  
DRAIN  
GATE  
Absolute Maximum Ratings  
Parameter  
GATE  
Value  
TO-92  
TO-243AA (SOT-89)  
Drain-to-source voltage  
Drain-to-gate voltage  
BVDSS  
BVDGS  
±20V  
Product Marking  
Gate-to-source voltage  
SiTN  
0 1 0 4  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
= “Green” Packaging  
Operating and storage temperature  
-55OC to +150OC  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
Package may or may not include the following marks: Si or  
TO-92  
Typical Thermal Resistance  
W = Code for Week Sealed  
TN1LW  
Package  
θja  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
TO-243AA (SOT-89)  
TO-92  
132OC/W  
133OC/W  
TO-243AA (SOT-89)  
Doc.# DSFP-TN0104  
C080813  
Supertex inc.  
www.supertex.com  
TN0104  
Thermal Characteristics  
ID  
ID  
Power Dissipation  
†
Package  
IDR  
IDRM  
@TC = 25OC  
(continuous)†  
(pulsed)  
TO-92  
450mA  
2.40A  
2.90A  
1.0W  
450mA  
630mA  
2.40A  
2.90A  
TO-243AA (SOT-89)  
Notes:  
630mA  
1.6W‡  
†
ID (continuous) is limited by max rated Tj .  
‡
TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.  
Electrical Characteristics (TA = 25OC unless otherwise specified)  
Sym Parameter Min Typ Max Units Conditions  
BVDSS Drain-to-source breakdown voltage  
VGS(th) Gate threshold voltage  
40  
-
-
-
V
V
VGS = 0V, ID = 1.0mA  
VGS = VDS, ID= 500µA  
0.6  
1.6  
ΔVGS(th) Change in VGS(th) with temperature  
-
-
-
-3.8  
0.1  
-
-5.0 mV/OC VGS = VDS, ID= 1.0mA  
IGSS  
Gate body leakage  
100  
1.0  
nA  
VGS = ± 20V, VDS = 0V  
VGS = 0V, VDS = Max Rating  
IDSS  
Zero gate voltage drain current  
µA  
V
DS = 0.8 Max Rating,  
-
-
100  
VGS = 0V, TA = 125°C  
VGS = 3.0V, VDS = 20V  
VGS = 5.0V, VDS = 20V  
VGS = 10V, VDS = 20V  
VGS = 3.0V, ID = 50mA  
VGS = 5.0V, ID = 250mA  
-
0.35  
1.1  
2.6  
5.0  
2.3  
1.5  
-
-
ID(ON)  
On-state drain current  
0.5  
-
A
2.0  
-
-
-
-
-
-
-
Both packages  
2.5  
1.8  
2.0  
1.0  
-
Static drain-to-source  
on-state resistance  
RDS(ON)  
Ω
TO-92  
VGS = 10V, ID = 1.0A  
TO-243AA  
ΔRDS(ON) Change in RDS(ON) with temperature  
0.7  
%/OC VGS = 10V, ID = 1.0A  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transductance  
Input capacitance  
340 450  
mmho VDS = 20V, ID = 500mA  
-
-
-
-
-
-
-
-
-
-
-
-
70  
50  
15  
5.0  
8.0  
9.0  
8.0  
1.8  
2.0  
-
VGS = 0V,  
VDS = 20V,  
f = 1.0MHz  
Common source output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
pF  
ns  
-
3.0  
7.0  
6.0  
5.0  
1.2  
-
VDD = 20V,  
ID = 1.0A,  
td(OFF)  
tf  
Turn-off delay time  
Fall time  
RGEN = 25Ω  
TO-92  
TO-243AA  
VGS = 0V, ISD = 1.0A  
VGS = 0V, ISD = 0.5A  
VGS = 0V, ISD = 1.0A  
Diode forward voltage  
drop  
VSD  
V
trr  
Reverse recovery time  
300  
ns  
Notes:  
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
Doc.# DSFP-TN0104  
C080813  
Supertex inc.  
www.supertex.com  
2
TN0104  
Switching Waveforms and Test Circuit  
10V  
VDD  
90%  
INPUT  
Pulse  
RL  
10%  
Generator  
OUTPUT  
D.U.T.  
0V  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
RGEN  
tf  
tr  
VDD  
OUTPUT  
INPUT  
10%  
10%  
0V  
90%  
90%  
Doc.# DSFP-TN0104  
C080813  
Supertex inc.  
www.supertex.com  
3
TN0104  
Typical Performance Curves  
Output Characteristics  
Saturation Characteristics  
3.75  
3.75  
3.00  
2.25  
1.50  
0.75  
0
3.00  
VGS = 10V  
VGS = 10V  
2.25  
1.50  
0.75  
0
8V  
6V  
8V  
6V  
4V  
2V  
4V  
2V  
0
2
4
6
8
10  
0
10  
20  
30  
40  
VDS (volts)  
VDS (volts)  
Transconductance vs. Drain Current  
Power Dissipation vs. Case Temperature  
0.75  
0.60  
0.45  
0.30  
0.15  
0
5
VDS = 25V  
(TA = 25OC)  
TA = -55OC  
4
3
TA = 25OC  
TA = 125OC  
2
TO-243AA  
TO-92  
1
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
0
25  
50  
75  
100  
125  
150  
TC (OC)  
ID (amperes)  
Maximum Rated Safe Operating Area  
Thermal Response Characteristics  
1.0  
0.8  
0.6  
0.4  
0.2  
0
10  
TO-243AA  
PD = 1.6W  
TA = 25OC  
TO-92 (DC)  
0.0  
0.1  
TO-243AA (DC)  
TO-92  
PD = 1.0W  
TC = 25OC  
(TA = 25OC)  
0.01  
0.1  
1.0  
10  
100  
0.001  
0.01  
0.1  
1.0  
10  
VDS (volts)  
tP (seconds)  
Doc.# DSFP-TN0104  
C080813  
Supertex inc.  
www.supertex.com  
4
TN0104  
Typical Performance Curves (cont.)  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
1.3  
10  
8
VGS = 5.0V  
1.2  
1.1  
1.0  
0.9  
0.8  
6
VGS = 10V  
4
2
0
-50  
0
50  
100  
150  
0
1
2
Tj (OC)  
ID (amperes)  
V(th) and RDS Variation with Temperature  
Transfer Characteristics  
VDS = 25V  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
3.0  
TA = -55OC  
25OC  
2.4  
1.8  
1.2  
0.6  
0
RDS(ON) @ 5.0V, 0.25A  
125OC  
V(th) @ 0.5mA  
-50  
0
50  
100  
150  
0
2
4
6
8
10  
Tj (OC)  
VGS (volts)  
Capacitance vs. Drain-to-Source Voltage  
Gate Drive Dynamic Characteristics  
100  
10  
f = 1MHz  
VDS = 10V  
8
55pF  
75  
40V  
6
CISS  
50  
4
25  
2
COSS  
CRSS  
50pF  
0
0.50  
0
0
10  
20  
30  
40  
0.65  
0.80  
0.95  
1.10  
1.25  
QG (nanocoulombs)  
VDS (volts)  
Doc.# DSFP-TN0104  
C080813  
Supertex inc.  
www.supertex.com  
5
TN0104  
3-Lead TO-92 Package Outline (N3)  
D
A
Seating  
Plane  
1
2
3
L
c
b
e1  
e
Side View  
Front View  
E
E1  
1
3
2
Bottom View  
Symbol  
A
.170  
-
b
.014†  
-
c
D
.175  
-
E
.125  
-
E1  
.080  
-
e
e1  
.045  
-
L
.500  
-
MIN  
NOM  
MAX  
.014†  
-
.095  
-
Dimensions  
(inches)  
.210  
.022†  
.022†  
.205  
.165  
.105  
.105  
.055  
.610*  
JEDEC Registration TO-92.  
* This dimension is not specified in the JEDEC drawing.  
† This dimension differs from the JEDEC drawing.  
Drawings not to scale.  
Supertex Doc.#: DSPD-3TO92N3, Version E041009.  
Doc.# DSFP-TN0104  
C080813  
Supertex inc.  
www.supertex.com  
6
TN0104  
3-Lead TO-243AA (SOT-89) Package Outline (N8)  
D
D1  
C
H
E
E1  
1
2
3
L
b
b1  
A
e
e1  
Top View  
Side View  
Symbol  
A
1.40  
-
b
0.44  
-
b1  
0.36  
-
C
0.35  
-
D
D1  
1.62  
-
E
2.29  
-
E1  
2.00†  
-
e
e1  
H
L
0.73†  
-
MIN  
NOM  
MAX  
4.40  
-
3.94  
-
Dimensions  
(mm)  
1.50  
BSC  
3.00  
BSC  
1.60  
0.56  
0.48  
0.44  
4.60  
1.83  
2.60  
2.29  
4.25  
1.20  
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.  
† This dimension differs from the JEDEC drawing  
Drawings not to scale.  
Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
information go to http://www.supertex.com/packaging.html.)  
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability  
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)  
©2013 Supertex inc.All rights reserved. Unauthorized use or reproduction is prohibited.  
Supertex inc.  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
Tel: 408-222-8888  
www.supertex.com  
Doc.# DSFP-TN0104  
C080813  
7

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