TN2106N3-G [MICROCHIP]

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型号：	TN2106N3-G
厂家：	MICROCHIP
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Supertex inc.

TN2106

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

►

Free from secondary breakdown

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Low power drive requirement

Ease of paralleling

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Applications

► Logic level interfaces - ideal for TTL and CMOS

► Solid state relays

► Battery operated systems

► Photo-voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Ordering Information

Product Summary

R_DS(ON)

Part Number

Package Option

Packing

V_GS(th)

(max)

BV_DSS/BV_DGS

(max)

TN2106K1-G

TO-236AB (SOT-23) 3000/Reel

60V

2.5Ω

2.0V

TN2106N3-G

TO-92

1000/Bag

2000/Reel

TN2106N3-G P002

TN2106N3-G P003

Pin Conﬁguration

TN2106N3-G P005 TO-92

TN2106N3-G P013

DRAIN

TN2106N3-G P014

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

DRAIN

GATE

SOURCE

GATE

SOURCE

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

TO-236AB (SOT-23)

TO-92

Absolute Maximum Ratings

Parameter

Value

BV_DSS

BV_DGS

±20V

Product Marking

Drain-to-source voltage

Drain-to-gate voltage

W = Code for week sealed

= “Green” Packaging

N1LW

Gate-to-source voltage

Package may or may not include the following marks: Si or

-55^OC to +150^OC

TO-236AB (SOT-23)

Operating and storage temperature

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

SiTN

2 1 0 6

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Typical Thermal Resistance

Package may or may not include the following marks: Si or

TO-92

Package

θ_ja

TO-236AB (SOT-23)

TO-92

203^OC/W

132^OC/W

Doc.# DSFP-TN2106

B080913

Supertex inc.

www.supertex.com

TN2106

Thermal Characteristics

I_D

Power Dissipation

†

Package

I_DR

I_DRM

(continuous)^†

(pulsed)

@T_C= 25^OC

TO-236AB (SOT-23)

TO-92

280mA

300mA

0.8A

1.0A

0.36W

0.74W

280mA

300mA

0.8A

1.0A

Notes:

†

I_D(continuous) is limited by max rated T_j.

Electrical Characteristics(T_A= 25^OC unless otherwise speciﬁed)

Sym

BV_DSS

V_GS(th)

Parameter

Min

0.6

Typ

Max Units Conditions

Drain-to-source breakdown voltage

Gate threshold voltage

V_GS= 0V, I_D= 1.0mA

V_GS= V_DS, I_D= 1.0mA

2.0

ΔV_GS(th)Change in V_GS(th)with temperature

-3.8

0.1

-5.5 mV/^OC V_GS= V_DS, I_D= 1.0mA

I_GSS

Gate body leakage

100

1.0

V_GS= ± 20V, V_DS= 0V

V_GS= 0V, V_DS= Max Rating

I_DSS

Zero gate voltage drain current

On-state drain current

µA

_DS= 0.8Max Rating,

100

V_GS= 0V, T_A= 125^OC

V_GS= 10V, V_DS= 25V

I_D(ON)

0.6

5.0

2.5

1.0

_GS= 4.5V, I_D= 200mA

R_DS(ON)Static drain-to-source on-state resistance

V_GS= 10V, I_D= 500mA

ΔR_DS(ON)Change in R_DS(ON)with temperature

0.70

400

%/^OC V_GS= 10V, I_D= 500mA

mmho V_DS= 25V, I_D= 500mA

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Forward transductance

Input capacitance

150

8.0

5.0

8.0

9.0

8.0

1.8

V_GS= 0V,

V_DS= 25V,

f = 1.0MHz

Common source output capacitance

Reverse transfer capacitance

Turn-on delay time

7.0

3.0

5.0

6.0

5.0

1.2

400

V_DD= 25V,

I_D= 0.5A,

R_GEN= 25Ω

Rise time

t_d(OFF)

t_f

Turn-off delay time

Fall time

V_SD

t_rr

Diode forward voltage drop

Reverse recovery time

V_GS= 0V, I_SD= 500mA

Notes:

1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

10V

VDD

90%

INPUT

Pulse

R_L

10%

Generator

OUTPUT

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

R_GEN

t_f

t_r

VDD

OUTPUT

INPUT

D.U.T.

10%

90%

Doc.# DSFP-TN2106

B080913

Supertex inc.

www.supertex.com

TN2106

Typical Performance Curves

Output Characteristics

Saturation Characteristics

2.5

2.0

1.5

1.0

0.5

V_GS= 10V

2.0

1.5

1.0

0.5

2.0

4.0

6.0

8.0

V_DS(volts)

Transconductance vs. Drain Current

Power Dissipation vs. Temperature

0.5

0.4

0.3

0.2

0.1

1.0

0.8

0.6

0.4

0.2

V_DS= 25V

TO-92

T_A= -55^OC

25^OC

125^OC

SOT-23

0.2

0.4

0.6

0.8

1.0

100

125

150

I_D(amperes)

T_A(^OC)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

1.0

SOT-23 (pulsed)

SOT-23 (DC)

0.1

0.01

TO-236AB

P_D= 0.36W

T_A= 25^OC

TO-92

P_D= 1.0W

T_C= 25^OC

T_A= 25^OC

0.001

0.1100

0.001

0.01

0.1

1.0

V_DS(volts)

t_P(seconds)

Doc.# DSFP-TN2106

B080913

Supertex inc.

www.supertex.com

TN2106

Typical Performance Curves (cont.)

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

8.0

6.0

4.0

2.0

1.1

1.0

0.9

V_GS= 4.5V

V_GS= 10V

-50

100

150

0.5

1.0

1.5

2.0

2.5

I_D(amperes)

T_j(^OC)

V_GS(th)and R_DS(ON)Variation with Temperature

Transfer Characteristics

2.0

1.0

V_DS= 25V

1.2

R_DS(ON)@ 10V, 0.5A

1.6

0.8

0.6

0.4

0.2

T_A= -55^OC

1.0

1.2

0.8

25^OC

0.8

125^OC

V_GS(th)@ 1.0mA

0.6

0.4

150

-50

100

2.0

4.0

6.0

8.0

T_j(^OC)

V_GS(volts)

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

100

f = 1.0MHz

8.0

6.0

4.0

2.0

V_DS= 10V

V_DS= 20V

C_ISS

92 pF

C_OSS

C_RSS

38 pF

0.2

0.4

0.6

0.8

1.0

Q_G(nanocoulombs)

V_DS(volts)

Doc.# DSFP-TN2106

B080913

Supertex inc.

www.supertex.com

TN2106

3-Lead TO-236AB (SOT-23) Package Outline (K1)

2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch

Gauge

Plane

0.25

Seating

Plane

View B

Top View

View B

Seating

Plane

View A - A

Side View

Symbol

0.01

2.10

0^O

MIN

NOM

MAX

0.89

0.88

0.95

1.02

0.30

2.80

2.90

3.04

1.20

1.30

1.40

0.20^†

0.50

0.60

Dimension

(mm)

0.95

BSC

1.90

BSC

0.54

REF

1.12

0.10

0.50

2.64

8^O

JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.

Doc.# DSFP-TN2106

B080913

Supertex inc.

www.supertex.com

TN2106

3-Lead TO-92 Package Outline (N3)

Seating

Plane

Side View

Front View

Bottom View

Symbol

.170

.014^†

.175

.125

.080

.045

.500

MIN

NOM

MAX

.014^†

.095

Dimensions

(inches)

.210

.022^†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

Doc.# DSFP-TN2106

B080913

TN2106N3-G [MICROCHIP]

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