HAL401 [MICRONAS]

Linear Hall-Effect Sensor IC; 线性霍尔效应传感器IC


型号：	HAL401
厂家：	MICRONAS
描述：	Linear Hall-Effect Sensor IC 线性霍尔效应传感器IC 传感器
文件：	总20页 (文件大小：1349K)
中文：	中文翻译
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Hardware

Documentation

Data Sheet

HAL^®401

Linear Hall-Effect Sensor IC

Edition Dec. 8, 2008

DSH000018_002EN

HAL401

DATA SHEET

Micronas Trademarks

– HAL

Theinformationanddatacontainedinthisdocumentare

believed to be accurate and reliable. The software and

proprietary information contained therein may be pro-

tectedbycopyright, patent, trademarkand/orotherintel-

lectual property rights of Micronas. All rights not ex-

pressly granted remain reserved by Micronas.

Micronas Patents

ChopperedOffsetCompensationprotectedbyMicronas

patents no. US5260614A, US5406202A, EP052523B1,

and EP0548391B1.

Micronas assumes no liability for errors and gives no

warrantyrepresentationorguaranteeregardingthesuit-

ability of its products for any particular purpose due to

these specifications.

Third-Party Trademarks

All other brand and product names or company names

may be trademarks of their respective companies.

Bythispublication, Micronasdoesnotassumeresponsi-

bility for patent infringements or other rights of third par-

ties which may result from its use. Commercial condi-

tions, product availability and delivery are exclusively

subject to the respective order confirmation.

Any information and data which may be provided in the

document can and do vary in different applications, and

actual performance may vary over time.

Alloperatingparametersmustbevalidatedforeachcus-

tomer application by customers technical experts. Any

new issue of this document invalidates previous issues.

Micronas reserves the right to review this document and

to make changes to the documents content at any time

without obligation to notify any person or entity of such

revision or changes. For further advice please contact

us directly.

Do not use our products in life-supporting systems, avi-

ation and aerospace applications! Unless explicitly

agreed to otherwise in writing between the parties, Mi-

cronas products are not designed, intended or autho-

rizedforuseascomponentsinsystemsintendedforsur-

gical implants into the body, or other applications

intended to support or sustain life, or for any other ap-

plication in which the failure of the product could create

a situation where personal injury or death could occur.

No part of this publication may be reproduced, photoco-

pied, stored on a retrieval system or transmitted without

the express written consent of Micronas.

Micronas

DATA SHEET

HAL401

Contents

Page

Section

Title

Introduction

1.1.

1.2.

1.3.

1.4.

1.5.

Features

Marking Code

Operating Junction Temperature Range

Hall Sensor Package Codes

Solderability and Welding

Functional Description

Specifications

3.1.

3.2.

3.3.

3.4.

3.4.1.

3.5.

3.6.

Outline Dimensions

Dimensions of Sensitive Area

Positions of Sensitive Area

Absolute Maximum Ratings

Storage and Shelf Life

Recommended Operating Conditions

Characteristics

Application Notes

Ambient Temperature

EMC and ESD

4.1.

4.2.

4.3.

Application Circuit

Data Sheet History

Micronas

HAL401

DATA SHEET

Linear Hall Effect Sensor IC

in CMOS technology

1.2. Marking Code

Type

Temperature Range

Release Notes: Revision bars indicate significant

changes to the previous edition.

HAL401

401A

401K

1. Introduction

The HAL401 is a Linear Hall Effect Sensors produced in

CMOS technology. The sensor includes a temperature-

compensated Hall plate with choppered offset com-

pensation, two linear output stages, and protection de-

vices (see Fig. 2–1).

1.3. Operating Junction Temperature Range

The Hall sensors from Micronas are specified to the chip

temperature (junction temperature T ).

The output voltage is proportional to the magnetic flux

density through the hall plate. The choppered offset

compensation leads to stable magnetic characteristics

over supply voltage and temperature.

A: T = –40 °C to +170 °C

K: T = –40 °C to +140 °C

The HAL401 can be used for magnetic field measure-

ments, current measurements, and detection of any me-

chanical movement. Very accurate angle measure-

ments or distance measurements can also be done. The

sensor is very robust and can be used in electrical and

mechanical hostile environments.

Note: Due to power dissipation, there is a difference be-

tween the ambient temperature (T ) and junction

temperature. Please refer to section 4.1. on page

18 for details.

1.4. Hall Sensor Package Codes

The sensor is designed for industrial and automotive ap-

plications and operates in the ambient temperature

range from –40 °C up to 150 °C and is available in the

SMD-package SOT89B-1.

HALXXXPA-T

Temperature Range: A or K

Package: SF for SOT89B-1

Type: 401

1.1. Features:

– switching offset compensation at 147 kHz

– low magnetic offset

Example: HAL401SF-K

→ Type: 401

→ Package: SOT89B-1

– extremely sensitive

→ Temperature Range: T = –40 °C to +140 °C

– operates from 4.8 to 12 V supply voltage

Hall sensors are available in a wide variety of packaging

versions and quantities. For more detailed information,

please refer to the brochure: “Hall Sensors: Ordering

Codes, Packaging, Handling”.

– wide temperature range T = –40 °C to +150 °C

– overvoltage protection

– reverse voltage protection of V -pin

– differential output

– accurate absolute measurements of DC and low fre-

quency magnetic fields

– on-chip temperature compensation

Micronas

DATA SHEET

HAL401

1.5. Solderability and Welding

Soldering

During soldering reflow processing and manual rework-

ing, acomponentbodytemperatureof260°Cshouldnot

be exceeded.

Welding

Deviceterminalsshouldbecompatiblewithlaserandre-

sistance welding. Please note that the success of the

welding process is subject to different welding parame-

ters which will vary according to the welding technique

used. A very close control of the welding parameters is

absolutely necessary in order to reach satisfying results.

Micronas, therefore, does not give any implied or ex-

press warranty as to the ability to weld the component.

OUT1

OUT2

GND

Fig. 1–1: Pin configuration

Micronas

HAL401

DATA SHEET

2. Functional Description

External filtering or integrating measurement can be

done to eliminate the AC component of the signal. Re-

sultingly, the influence of mechanical stress and temper-

ature cycling is suppressed. No adjustment of magnetic

offset is needed.

GND

Chopper

Oscillator

The sensitivity is stabilized over a wide range of temper-

ature and supply voltage due to internal voltage regula-

tion and circuits for temperature compensation.

Temp.

Dependent

Bias

Offset

Compensation;

Hallplate

Switching

Matrix

Offset Compensation (see Fig. 2–2)

The Hall Offset Voltage is the residual voltage measured

in absence of a magnetic field (zero-field residual volt-

age). This voltage is caused by mechanical stress and

can be modeled by a displacement of the connections

for voltage measurement and/or current supply.

Protection

Device

OUT1

OUT2

Compensation of this kind of offset is done by cyclic

commutating the connections for current flow and volt-

age measurement.

Fig. 2–1: Block diagram of the HAL401 (top view)

– First cycle:

The Linear Hall Sensor measures constant and low fre-

quency magnetic flux densities accurately. The differen-

The hall supply current flows between points 4 and 2.

In the absence of a magnetic field, V is the Hall Off-

set Voltage (+V ). In case of a magnetic field, V is

the sum of the Hall voltage (V ) and V

tial output voltage V

(difference of the voltages on

OUTDIF

Offs

pin2andpin3)isproportionaltothemagneticfluxdensi-

ty passing vertically through the sensitive area of the

Offs

= V + V

H Offs

chip. The common mode voltage V

(average of the

– Second cycle:

The hall supply current flows between points 1 and 3.

voltages on pin 2 and pin 3) of the differential output am-

plifier is a constant 2.2 V.

In the absence of a magnetic field, V is the Hall Off-

set Voltage with negative polarity (–V ). In case of

The differential output voltage consists of two compo-

nents due to the switching offset compensation tech-

nique. The average of the differential output voltage rep-

resents the magnetic flux density. This component is

overlaid by a differential AC signal at a typical frequency

of 147 kHz. The AC signal represents the internal offset

voltages of amplifiers and hall plates that are influenced

by mechanical stress and temperature cycling.

Offs

a magnetic field, V is the difference of the Hall volt-

age (V ) and V

Offs

= V – V

H Offs

In the first cycle, the output shows the sum of the Hall

voltage and the offset; in the second, the difference of

both. The difference of the mean values of V

and

OUT1

) is equivalent to V

OUT2

OUTDIF

Hall

for Bu0 mT

OUT1

Note: The numbers do not

represent pin numbers.

OUTDIF/2

Offs

OUTDIF

OUTAC

OUTDIF/2

Offs

OUT2

1/f = 6.7 μs

a) Offset Voltage

Fig. 2–2: Hall Offset Compensation

b) Switched Current Supply

c) Output Voltage

Micronas

DATA SHEET

HAL401

3. Specifications

3.1. Outline Dimensions

Fig. 3–1:

SOT89B-1: Plastic Small Outline Transistor package, 4 leads

Weight approximately 0.034 g

Micronas

HAL401

DATA SHEET

3.2. Dimensions of Sensitive Area

0.37 mm x 0.17 mm

3.3. Position of Sensitive Area

SOT89B-1

0.95 mm nominal

3.4. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maxi-

mum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric

fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute

maximum-rated voltages to this circuit.

All voltages listed are referenced to ground (GND).

Symbol

Parameter

Pin No.

Min.

–12

–0.3

–5

Max.

Unit

Supply Voltage

Output Voltage

2, 3

Continuous Output Current

Junction Temperature Range

Ambient Temperature

°C

–40

170

at V = 5 V

–

150

125

°C

at V = 12 V

3.4.1. Storage and Shelf Life

The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of

30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.

Solderability is guaranteed for one year from the date code on the package.

Micronas

DATA SHEET

HAL401

3.5. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specifi-

cation is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground (GND).

Symbol

Parameter

Pin No.

2, 3

Min.

–2.25

–1

Max.

2.25

Unit

Remarks

T = 25 °C

Continuous Output Current

Load Capacitance

T = 170 °C

–

Supply Voltage

4.8

see Fig. 3–2

Magnetic Field Range

–50

power dissipation limit

12 V

11.5 V

8.0 V

6.8 V

4.8 V

4.5 V

min. V

for specified

sensitivity

–40 °C

150 °C T

25 °C

125 °C

Fig. 3–2: Recommended Operating Supply Voltage

Micronas

HAL401

DATA SHEET

3.6. Characteristics at T = –40 °C to +170 °C , V = 4.8 V to 12 V, GND = 0 V

at Recommended Operation Conditions (Fig. 3–2 for T and V ) as not otherwise specified in the column“Conditions”.

Typical characteristics for T = 25 °C, V = 6.8 V and –50 mT < B < 50 mT

Symbol

Parameter

Pin No.

Min.

Typ.

14.5

Max.

17.1

18.5

Unit

Conditions

T = 25 °C, I

Supply Current

= 0 mA

OUT1,2

Supply Current over

Temperature Range

= 0 mA

OUT1,2

Common Mode Output Voltage

2, 3

2.1

2.2

2.3

2.5

= 0 mA,

= (V

+ V

) / 2

OUT1

OUT2

CMRR

Common Mode Rejection Ratio

–2.5

mV/V

CMRR is limited by the influ-

ence of power dissipation.

Differential Magnetic Sensitivity

2–3

48.5

46.5

–0.2

1.5

mV/mT

–50 mT < B < 50 mT

T = 25 °C

Differential Magnetic Sensitivity

over Temperature Range

37.5

–1.5

–25

–50 mT < B < 50 mT

Magnetic Offset

over Temperature

B = 0 mT, I

= 0 mA

offset

OUT1,2

ΔB

ΔT

Magnetic Offset Change

Bandwidth (–3 dB)

μT/K

= 0 mA

OFFSET

OUT1,2

2–3

–

kHz

without external Filter

Non-Linearity

0.5

–50 mT < B < 50 mT

dif

of Differential Output

Non-Linearity

2, 3

–

single

of Single Ended Output

Chopper Frequency over Temp.

2, 3

–

147

0.6

–

kHz

Peak-to-Peak

1.3

OUTACpp

AC Output Voltage

Magnetic RMS Differential

Broadband Noise

2–3

2, 3

–

μT

BW = 10 Hz to 10 kHz

B = 0 mT

meff

Corner Frequency

of 1/f Noise

–

Cflicker

Corner Frequency

of 1/f Noise

100

–

B = 50 mT

Cflicker

Output Impedance

150

200

2.5 mA,

OUT

thJSB

OUT1,2

T = 25 °C, V = 6.8 V

Output Impedance

over Temperature

2.5 mA

OUT1,2

Thermal Resistance Junction to

Substrate Backside

150

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5 mm

pad size (see Fig. 3–3)

case

SOT89B-1

with external 2 pole filter (f

= 5 kHz), V

is reduced to less than 1 mV by limiting the bandwith

OUTAC

3db

Micronas

DATA SHEET

HAL401

1.80

1.05

1.45

2.90

1.05

0.50

1.50

Fig. 3–3: Recommended footprint SOT89B,

Dimensions in mm

Note: All dimensions are for reference only. The pad

size may vary depending on the requirements of

the soldering process.

Micronas

HAL401

DATA SHEET

0.05

= 25 °C

B = 0 mT

T = –40 °C

= 6.8 V

0.04

0.03

0.02

0.01

0.00

OUT1

OUT2

OFFS

T = 25 °C

OUT1

OUT2

T = 125 °C

T = 150 °C

–0.01

–0.02

–0.03

–0.04

–0.05

–150 –100 –50

100 150

14 V

Fig. 3–4: Typical output voltages

Fig. 3–6: Typical differential output offset

versus magnetic flux density

voltage versus supply voltage

2.0

B = 0 mT

T = –40 °C

B = 0 mT

1.5

1.0

1.5

OFFS

= 4.8 V

= 6.0 V

= 12 V

T = 25 °C

1.0

0.5

T = 125 °C

T = 150 °C

0.5

0.0

–0.5

–1.0

–1.5

–2

–0.5

–1.0

–1.5

–2

14 V

–50 –25

25 50 75 100 125 150 °C

Fig. 3–5: Typical magnetic offset of

differential output versus supply voltage

Fig. 3–7: Typical magnetic offset of differential

output versus ambient temperature

Micronas

DATA SHEET

HAL401

mV/mT

B = ±50 mT

T = –40 °C

= 4.8 V

T = 25 °C

= 6.0 V

= 12 V

T = 125 °C

T = 150 °C

14 V

–50 –25

25 50 75 100 125 150 °C

Fig. 3–8: Typical differential magnetic

Fig. 3–10: Typical differential magnetic

sensitivity versus supply voltage

sensitivity versus ambient temperature

1.5

T = 25 °C

= 6.8 V

1.0

0.5

1.0

0.5

dif

0.0

–0.5

–1.0

–1.5

–0.5

–1.0

–1.5

= 4.8 V

T = –40 °C

= 6.0 V

= 12 V

T = 25 °C

T = 125 °C

T = 150 °C

–80 –60 –40 –20

20 40 60 80 mT

–80 –60 –40 –20

20 40 60 80 mT

Fig. 3–9: Typical non-linearity of differential

Fig. 3–11: Typicalnon-linearityofdifferential

output versus magnetic flux density

Micronas

HAL401

DATA SHEET

T = 25 °C

= 6.0 V

single

–1

–2

–3

–1

–2

–3

= 4.8 V

T = –40 °C

= 12 V

T = 25 °C

T = 125 °C

T = 150 °C

–80 –60 –40 –20

20 40 60 80 mT

–80 –60 –40 –20

20 40 60 80 mT

Fig. 3–12: Typical single-ended non-linearity

Fig. 3–14: Typical non-linearity of single-

versus magnetic flux density

ended output versus magnetic flux density

kHz

200

kHz

200

180

160

140

120

100

160

140

120

100

T = –40 °C

T = 25 °C

= 4.8 V

= 6.0 V

= 12 V

T = 125 °C

T = 150 °C

14 V

–50 –25

25 50 75 100 125 150

°C

Fig. 3–13: Typical chopper frequency

Fig. 3–15: Typical chopper frequency

versus supply voltage

versus ambient temperature

Micronas

DATA SHEET

HAL401

2.4

2.25

2.24

2.23

2.22

2.21

2.20

2.19

2.18

2.17

2.16

2.15

2.2

2.0

1.8

1.6

1.4

1.2

= 4.8 V

= 12 V

T = –40 °C

T = 25 °C

T = 150 °C

14 V

–50 –25

25 50 75 100 125 150

°C

Fig. 3–16: Typical common mode output

Fig. 3–18: Typical common mode output

voltage versus supply voltage

voltage versus ambient temperature

1000

T = 25 °C

OUT1pp,

OUT2pp

OUT1pp,

OUT2pp

800

600

400

200

800

600

400

200

= 4.8 V

= 6.0 V

= 12 V

14 V

–50 –25

25 50 75 100 125 150 °C

Fig. 3–17: Typical output AC voltage

Fig. 3–19: Typical output AC voltage

versus supply voltage

versus ambient temperature

Micronas

HAL401

DATA SHEET

= 0 mA

OUT1,2

–5

T = –40 °C

–10

–15

–20

–25

T = 25 °C

T = –40 °C

T = 125 °C

T = 25 °C

T = 150 °C

T = 125 °C

T = 150 °C

–15 –10

–5

15 V

8 V

Fig. 3–20: Typical supply current

Fig. 3–22: Typical supply current

versus supply voltage

B = 0 mT

= 4.8 V

= 12 V

= 4.8 V

= 6.0 V

= 12 V

–50 –25

25 50 75 100 125 150 °C

–6

–4

–2

6 mA

OUT1,2

Fig. 3–21: Typical supply current

Fig. 3–23: Typical supply current

versus temperature

versus output current

Micronas

DATA SHEET

HAL401

dBT_rms

200

–100

–110

–120

–130

–140

–150

B = 0 mT

= 4.8 V

T = 25 °C

180

meff

OUT

160

140

120

100

= 6.0 V

= 12 V

B = 0 mT

B = 65 mT

83 nT

–50 –25

25 50 75 100 125 150 °C

0.1 1.0 10.0 100.01000.1000001.0000010.000000.0

0.1 1

10 100 1k 10k 100k 1M Hz

Fig. 3–24: Typical dynamic differential

Fig. 3–26: Typical magnetic noise spectrum

output resistance versus temperature

= 25 °C

0 dB = 42.5 mV/mT

–10

–20

–30

–40

100

1000

1 k

10000 100000

10 k 100 k

Fig. 3–25: Typical magnetic frequency

response

Micronas

HAL401

DATA SHEET

4. Application Notes

4.3. Application Circuit

Mechanical stress on the device surface (caused by the

package of the sensor module or overmolding) can influ-

ence the sensor performance.

The normal integrating characteristics of a voltmeter is

sufficient for signal filtering.

The parameter V

(see Fig. 2–2) increases with

OUTACpp

external mechanical stress. This can cause linearity er-

rors at the limits of the recommended operation condi-

tions.

4.7n

47 n

330 p

Oscillo-

scope

HAL401

OUT1

Ch1

4.1. Ambient Temperature

3.3 k

6.8 n

3.3 k

1 k

Due to internal power dissipation, the temperature on

OUT2

Ch2

the silicon chip (junction temperature T ) is higher than

the temperature outside the package (ambient tempera-

47 n

330 p

ture T ).

GND

T = T + ΔT

Do not connect OUT1 or OUT2 to Ground.

Atstaticconditionsandcontinuousoperation, thefollow-

ing equation applies:

Fig. 4–1: Filtering of output signals

ΔT = I * V * R

thJSB

Display the difference between channel 1 and channel

2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF

for electromagnetic immunity are recommended.

For all sensors, the junction temperature range T is

specified. The maximum ambient temperature T

can be calculated as:

Amax

= T

– ΔT

Jmax

For typical values, use the typical parameters. For worst

case calculation, use the max. parameters for I and

Voltage

Meter

R , and the max. value for V from the application.

HAL401

OUT1

High

4.2. EMC and ESD

OUT2

Low

Please contact Micronas for detailed information on

EMC and ESD results.

GND

Do not connect OUT1 or OUT2 to Ground.

Fig. 4–2: Flux density measurement with voltmeter

Micronas

DATA SHEET

HAL401

1.33 C

4.7n

330 p

R+ΔR

HAL401

OUT1

0.75 R

ADC

1.5 R

–

0.22 R

CMOS

OPV

OUT2

330 p

4.4 C

3 C

R–ΔR

GND

Do not connect OUT1 or OUT2 to Ground.

Fig. 4–3: Differential HAL401 output to single-ended output

R = 10 kΩ, C = 7.5 nF, ΔR for offset adjustment, BW = 1.3 kHz

–3dB

V_CCy6 V

2.2 n

4.7 n

330 p

4.7 k

HAL401

OUT1

1 n

4.7 k

–

4.7 k

CMOS

OPV

–

4.7 k

3.0 k

8.2 n

CMOS

OPV

OUT2

OUT

4.7 k

330 p

4.7 n

GND

Do not connect OUT1 or OUT2 to Ground.

V_EEx*6 V

Fig. 4–4: Differential HAL401 output to single-ended output (referenced to ground), filter – BW

= 14.7 kHz

–3dB

Micronas

HAL401

DATA SHEET

5. Data Sheet History

1. Final Data Sheet: “HAL401 Linear Hall Effect Sen-

sor IC”, June 26, 2002, 6251-470-1DS.

First release of the final data sheet.

2. Final Data Sheet: “HAL401 Linear Hall Effect Sen-

sor IC”, Sept. 14, 2004, 6251-470-2DS.

Second release of the final data sheet.

Major changes:

– new package diagram for SOT89-1

3. Final Data Sheet: “HAL401 Linear Hall Effect Sen-

sor IC”, Dec. 8, 2008, DSH000018_002EN

Third release of the final data sheet.

Major changes:

– Section 1.5. “Solderability and Welding” updated

– package diagrams updated

– Fig. 3–3: “Recommended footprint SOT89B” added

Micronas GmbH

Hans-Bunte-Strasse 19 · D-79108 Freiburg · P.O. Box 840 · D-79008 Freiburg, Germany

Tel. +49-761-517-0 · Fax +49-761-517-2174 · E-mail: docservice@micronas.com · Internet: www.micronas.com

Micronas

HAL401 [MICRONAS]

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