1GZ140D10E3 [MICROSEMI]

Zener Diode, 140V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, ROHS COMPLIANT, GLASS, DO-41, 2 PIN;


型号：	1GZ140D10E3
厂家：	Microsemi
描述：	Zener Diode, 140V V(Z), 10%, 1W, Silicon, Unidirectional, DO-204AL, ROHS COMPLIANT, GLASS, DO-41, 2 PIN 测试二极管
文件：	总3页 (文件大小：162K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1EZ110D5 thru 1EZ200D5, e3

Silicon 1 Watt Zener Diode

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1EZ110D5 thru 1EZ200D5 series of axial-leaded 1.0 watt Zeners

provides voltage regulation selections with 5% tolerances from 110 to 200

volts in a DO-41 plastic package size. Other Zener voltage tolerances are

also available by changing the suffix number to the tolerance desired such as

1 and 2 for tighter tolerances or 10 for wider tolerance. These plastic

encapsulated Zeners have moisture classification of Level 1 with no dry pack

required and are also available in various military equivalent screening levels

by adding a prefix identifier as also described in the Features section. They

may be operated at high maximum dc currents or full power rating with

adequate heat sinking. Microsemi also offers numerous other Zener

products to meet higher and lower power applications.

DO-41 or

DO-204AL

(Plastic)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Higher voltages of 110 to 200 V extends the JEDEC

registered 1N4728 thru 1N4664A (3.3 to 100 V)

•

Regulates voltage over a broad operating current

and temperature range.

Standard voltage tolerances are plus/minus 5% with

a “5” suffix and 10% with “10” suffix identification

•

Zener voltage selection from 110 to 200 V.

Flexible axial-lead mounting terminals.

Nonsensitive to ESD per MIL-STD-750 Method 1020

Withstands surge stresses.

Tight tolerances available in plus or minus 2% or 1%

with “2” or “1” suffix respectively

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers

High specified maximum current (I_ZM) when

adequately heat sunk.

•

Surface mount package equivalents available as

SMBJ1EZ110D5 to SMBJ1EZ200D5 in the popular

DO-214AA package, or SMBG1EZ110D5 to

SMBG1EZ200D5 in the DO-215AA package

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^oC: 1.0 watts (also see

derating in Figure 1).

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

Operating and Storage temperature: -65^oC to

•

FINISH: Tin-lead or RoHS Compliant annealed

matte-Tin plating solderable per MIL-STD-750,

method 2026

+150^oC.

Thermal Resistance: 45^oC/W junction to lead at 3/8

(10mm) lead length from body, or 105^oC/W junction

to ambient when mounted on FR4 PC board (1oz

Cu) with 4 mm²copper pads and track width 1 mm,

length 25 mm.

Steady-State Power: 1.0 watt at T_L<105^oC 3/8 inch

(10 mm) from body, or 1.0 watts at T_A<45^oC when

mounted on FR4 PC described for thermal

resistance (also see Figure 1).

POLARITY: Cathode indicated by band where

diode is to be operated with the banded end

positive with respect to the opposite end

•

MARKING: Part number

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.4 grams

See package dimensions on last page

•

Forward voltage @ 200 mA: 1.2 volts (maximum).

Solder Temperatures: 260^oC for 10 s (max).

6-20-2006 REV C

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1EZ110D5 thru 1EZ200D5, e3

Silicon 1 Watt Zener Diode

S C O T T S D A L E D I V I S I O N

ELECTRICAL CHARACTERISTICS @ 25oC

TYPICAL

MAXIMUM

SURGE

CURRENT

(Note 4)

NOMINAL

MAXIMUM

REVERSE

CURRENT

MAXIMUM

ZENER

CURRENT

@ 100ºC

TEMP.

COEFF.

ZENER

VOLTAGE

ZENER

VOLTAGE

(Note 2)

MAXIMUM ZENER IMPEDANCE

(Note 3)

MICROSEMI

PART

NUMBER

(Note 1 and 5)

V_Z

I_ZT

Z_ZT@ I_ZT

Ohms

Z_ZK

I_ZK

I_R

V_R

Volts

83.6

91.2

98.8

106.4

114

121.6

130.4

136.8

144.8

152

I_ZM

α_V(BR)

I_ZSM

μA

0.5

%/^oC

Volts

110

120

130

140

150

160

170

180

190

200

2.3

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

Ohms

5200

5800

6500

7000

7500

8000

8500

9000

9500

10000

0.25

8.3

8.0

6.9

6.5

5.7

5.4

5.2

4.9

4.7

4.6

Amps

0.15

0.14

0.13

0.12

0.11

0.10

1EZ110D5

1EZ120D5

1EZ130D5

1EZ140D5

1EZ150D5

1EZ160D5

1EZ170D5

1EZ180D5

1EZ190D5

1EZ200D5

570

710

910

1100

1300

1400

1450

1500

1700

1900

+0.095

+0.100

NOTES:

1. Suffix 5 indicates =/-5% tolerance. Suffix 10 indicates +/-10%, no suffix indicates +/-20%. Also Suffix 1 indicates +/-1% and suffix 2

indicates +/-2% on V_Ztolerance.

2. Voltage measurements to be performed 90 seconds after application of dc current at T_A25^oC (+8, -2^oC). Test currents (I_ZT) have been

selected so that power dissipation is 0.25 watts at nominal voltages. This results in a typical junction temperature rise of 10^oC.

3. The Zener impedance is derived from the 60 Hz ac voltage that results when an ac current having an rms value equal to 10% of the dc

Zener current (I_ZTor I_ZK) is superimposed on I_ZTor I_ZK

4. Maximum Surge Current I_ZSMis a non recurrent maximum peak reverse surge with a pulse width of 8.3 ms.

5. Glass devices may be ordered by replacing E in the series type number with G.

Example: 1GZ110D5

1EZ

110

% TOLERANCE

1 WATT

MOLDED

ZENER

DIODE

DEVICE

NOMINAL

ZENER

VOLTAGE

6-20-2006 REV C

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1EZ110D5 thru 1EZ200D5, e3

Silicon 1 Watt Zener Diode

S C O T T S D A L E D I V I S I O N

OUTLINE AND CIRCUIT

T_L

PACKAGE DIMENSIONS

T_Aon FR4 PC board

T_L, Lead temperature (^oC) at 3/8” from body

or T_Aon FR4 PC Board

FIGURE 1

POWER DERATING CURVE

6-20-2006 REV C

Microsemi

Page 3

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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