1N3016CUR-1TRE3 [MICROSEMI]

Zener Diode, 6.8V V(Z), 2%, 1.5W,;


型号：	1N3016CUR-1TRE3
厂家：	Microsemi
描述：	Zener Diode, 6.8V V(Z), 2%, 1.5W,
文件：	总3页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N3016BUR-1 thru 1N3051BUR-1, e3

(or MLL3016B thru MLL3051B, e3)

Surface Mount 1.5 W

S C O T T S D A L E D I V I S I O N

GLASS ZENER DIODES

DESCRIPTION

APPEARANCE

This surface mountable zener diode series is similar to the 1N3016 thru

1N3051 JEDEC registration in the DO-13 package except that it meets the

surface mount DO-213AB outline. It is an ideal selection for applications of

high density and low parasitic requirements. Due to its glass hermetic seal

qualities and metallurgically enhanced internal construction, it is also well

suited for high-reliability applications. This can be acquired by a source

control drawing (SCD), or by ordering device types with MQ, MX, or MV

prefix to part number for equivalent screening to JAN, JANTX or JANTXV.

DO-213AB

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Leadless surface mount package equivalents to the

JEDEC registered 1N3016 thru 1N3051 except with

higher power rating of 1.5 Watts

•

Regulates voltage over a broad operating current

and temperature range

•

Wide selection from 6.8 to 200 V

Tight voltage tolerances available

Low reverse (leakage) currents

Leadless package for surface mounting

Ideal for high-density mounting

•

Ideal for high-density mounting

Voltage range: 6.8 to 200 volts

Hermetically sealed, double-slug glass construction

Metallurgically enhanced contact construction.

Options for screening in accordance with MIL-PRF-

19500/115 for JAN, JANTX, JANTXV, and JANS with

MQ, MX, MV, or MSP prefixes respectively for part

numbers, e.g. MX1N3016BUR-1, MV1N3051BUR-1,

etc.

Metallurgically enhanced internal contact design for

greater reliability and lower thermal resistance

•

Nonsensitive to ESD

Hermetically sealed glass package

Specified capacitance (see Figure 2)

•

Axial lead “thru-hole” DO-13 packages per JEDEC

registration available as 1N3016B thru 1N3051B (see

separate data sheet with MIL-PRF-19500/115

qualification)

Inherently radiation hard as described in Microsemi

MicroNote 050

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Power dissipation at 25^ºC: 1.5 watts (also see

derating in Figure 1).

•

CASE: Hermetically sealed glass MELF package

TERMINALS: Tin-lead or RoHS compliant

annealed matte-Tin plating solderable per MIL-

STD-750, method 2026

Operating and Storage temperature: -65^ºC to

+175^ºC

Thermal Resistance: 40 ^ºC/W junction to end cap,

or 120^ºC/W junction to ambient when mounted on

FR4 PC board (1 oz Cu) with recommended

footprint (see last page)

•

POLARITY: Cathode indicated by band. Diode to

be operated with the banded end positive with

respect to the opposite end for Zener regulation

•

MARKING: Cathode band only

•

Steady-State Power: 1.50 watts at end-cap

temperature T_EC< 115^oC, or 1.25 watts at T_A= 25^ºC

when mounted on FR4 PC board and

recommended footprint as described for thermal

resistance (also see Figure 1)

TAPE & REEL optional: Standard per EIA-481-1-A

with 12 mm tape, 1500 per 7 inch reel or 5000 per

13 inch reel (add “TR” suffix to part number)

•

WEIGHT: 0.05 grams

See package dimensions on last page

•

Forward voltage @200 mA: 1.2 volts (maximum)

Solder Temperatures: 260 ^ºC for 10 s (max)

3-12-2006 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N3016BUR-1 thru 1N3051BUR-1, e3

(or MLL3016B thru MLL3051B, e3)

Surface Mount 1.5 W

S C O T T S D A L E D I V I S I O N

GLASS ZENER DIODES

*ELECTRICAL CHARACTERISTICS @ 25^oC

NOMINAL

MAXIMUM ZENER

IMPEDANCE

(Note 2)

MAXIMUM

ZENER

CURRENT

MAXIMUM

REVERSE

LEAKAGE

CURRENT †

I_R@ V_R

TYPICAL

TEMP.COEFF

OF ZENER

VOLTAGE

α_VZ

ZENER

VOLTAGE

V_Z@ I_ZT

ZENER

TEST

CURRENT

I_ZT

INDUSTRY

PART

NUMBER

MICROSEMI

PART

NUMBER

(NOTE 1)

I_ZM

Z_ZT@ I_ZT

OHMS

Z_ZK

I_ZK

VOLTS

OHMS

Volts

%/^oC

μA

1N3016BUR-1

1N3017BUR-1

1N3018BUR-1

1N3019BUR-1

1N3020BUR-1

1N3021BUR-1

1N3022BUR-1

1N3023BUR-1

1N3024BUR-1

1N3025BUR-1

1N3026BUR-1

1N3027BUR-1

1N3028BUR-1

1N3029BUR-1

1N3030BUR-1

1N3031BUR-1

1N3032BUR-1

1N3033BUR-1

1N3034BUR-1

1N3035BUR-1

1N3036BUR-1

1N3037BUR-1

1N3038BUR-1

1N3039BUR-1

1N3040BUR-1

1N3041BUR-1

1N3042BUR-1

1N3043BUR-1

1N3044BUR-1

1N3045BUR-1

1N3046BUR-1

1N3047BUR-1

1N3048BUR-1

1N3049BUR-1

1N3050BUR-1

1N3051BUR-1

MLL3016B

MLL3017B

MLL3018B

MLL3019B

MLL3020B

MLL3021B

MLL3022B

MLL3023B

MLL3024B

MLL3025B

MLL3026B

MLL3027B

MLL3028B

MLL3029B

MLL3030B

MLL3031B

MLL3032B

MLL3033B

MLL3034B

MLL3035B

MLL3036B

MLL3037B

MLL3038B

MLL3039B

MLL3040B

MLL3041B

MLL3042B

MLL3043B

MLL3044B

MLL3045B

MLL3046B

MLL3047B

MLL3048B

MLL3049B

MLL3050B

MLL3051B

6.8

7.5

8.2

9.1

3.5

4.0

4.5

700

750

1.0

210

187.5

172.5

157.5

142.5

127.5

120

111

94.5

5.2

5.7

6.2

6.9

7.6

8.4

9.1

9.9

.040

.045

.048

.050

.055

.060

.065

.070

.075

.080

.085

.090

.095

.100

.25

1.0

0.5

11.4

12.2

13.7

15.2

16.7

18.2

20.6

22.8

25.1

27.4

29.7

32.7

35.8

38.8

42.6

47.1

51.7

56.0

62.2

69.2

76.0

83.6

91.2

98.8

114.0

121.6

136.8

152.0

15.5

14.0

12.5

11.5

10.5

9.5

8.5

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.7

3.3

3.0

2.8

2.5

2.3

2.0

1.9

1.7

1.6

1.4

1.2

70.5

64.5

46.5

750

1000

1500

2000

3000

4000

4500

5000

6000

6500

7000

8000

34.5

31.5

28.5

25.5

22.5

16.5

13.5

12.45

10.35

8.55

8.1

110

125

150

175

200

250

350

450

550

700

1000

1100

1200

1500

100

110

120

130

150

160

180

200

7.35

6.9

* JEDEC registered data for 1N3016B thru 3051B equivalents except reverse (leakage) currents I_Rare lower and maximum Zener current I_ZMis higher.

** When applicable, add MQ, MX, MV, MSP prefix for 1N3016B to 1N3051B screening options in accordance with MIL-PRF-19500/115.

† Not JEDEC Data.

NOTE 1: Suffix “B” shown signifies a +/-5% tolerance on nominal zener voltage. No suffix designates a +/-20% and suffix “A” is +/-10%. If tighter

tolerance is required, suffix C is used to identify +/-2%; and suffix D is to identify +/-1% tolerance. V_Zis measured with the diode in

thermal equilibrium in 25^oC still air. The test currents (I_ZT) at nominal voltages provide a constant 0.25 watts for this device series.

NOTE 2: The zener impedance is derived when a 60 cycle ac current having an rms value equal to 10% of the dc zener current (I_ZTor I_ZK) is

superimposed on I_ZTor I_ZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown curve and to eliminate

unstable units. See MicroNote 202 for variation in dynamic impedance with different zener currents.

NOTE 3: This product series has previously been identified as MLL3016B thru MLL3051B by Microsemi. This alternate name may still be used,

however the Industry name of 1N3016BUR-1 thru 1N3051BUR-1 is preferred.

3-12-2006 REV D

Microsemi

Page 2

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N3016BUR-1 thru 1N3051BUR-1, e3

(or MLL3016B thru MLL3051B, e3)

Surface Mount 1.5 W

S C O T T S D A L E D I V I S I O N

GLASS ZENER DIODES

GRAPHS

STEADY-STATE POWER DERATING

T_EC

T_A

Temperature (^oC)

FIGURE 1

Power Derating Curve Where T_ECis End Cap Temp

and T_Ais Ambient Temperature on FR4 PC board.

FIGURE 2

Typical Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS

INCHES

MILLIMETERS

MIN MAX

2.39 2.66

DIM

MIN

MAX

0.105

0.205

0.022

0.094

0.189

0.016

4.80

0.41

5.20

0.55

FIGURE 3 Typical Zener Voltage

Temperature Coeff. vs. Zener Voltage

PAD LAYOUT

INCHES

7.00

1.8

.276

0.070

0.110

2.8

3-12-2006 REV D

Microsemi

Page 3

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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