1N3154A-3% [MICROSEMI]

Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN;


型号：	1N3154A-3%
厂家：	Microsemi
描述：	Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN 二极管
文件：	总3页 (文件大小：130K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N3154 thru 1N3157, A, -1, e3

8.4 Volt Temperature Compensated Zener

Reference Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes

provides a selection of 8.4 V nominal voltages and temperature coefficients to

as low as 0.001 %/^oC for minimal voltage change with temperature when

operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are

also available in JAN, JANTX, and JANTXV military qualifications. As a further

option for commercial product, they are available as RoHS Compliant with an

e3 suffix added to the part number. Microsemi also offers numerous other

Zener Reference Diode products for a variety of other voltages from 6.2 V to

200 V.

DO-7

(DO-204AA)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

JEDEC registered 1N3154 thru 1N3157A series

•

Provides minimal voltage changes over a broad

temperature range

Standard reference voltage of 8.4V +/- 5% with tighter

tolerances available

For instrumentation and other circuit designs

requiring a stable voltage reference

•

1N3154, 3155, 3156, and 3157 also have military

qualification to MIL-PRF-19500/158 up to the

JANTXV level by adding JAN, JANTX, or JANTXV

prefixes to part numbers as well as “-1” suffix, e.g.

JANTX1N3157-1, etc.

Maximum temperature coefficient selections

available from 0.01%/ºC to 0.001%/ºC

Tight reference voltage tolerances at the 8.4 V

nominal is available by adding tolerance 1%, 2%,

3%, etc. after the part number for identification e.g.

1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.

•

Internal metallurgical bonds

JANS Equivalent available via SCD

•

Flexible axial-lead mounting terminals

Radiation Hardened devices available by changing

1N prefix to RH, e.g. RH3156, RH3157, RH3157A,

etc. Also consult factory for “RH” data sheet

brochure

Nonsensitive to ESD per MIL-STD-750 Method 1020

•

RoHS Compliant devices available by adding an “e3”

suffix (not applicable to military)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating & StorageTemperature: -65^oC to +175^oC

•

CASE: Hermetically sealed glass case with DO-7

(DO-204AA) package

DC Power Dissipation: 500 mW @ T_L= 25^oC and

maximum current I_ZMof 55 mA. NOTE: For optimum

voltage-temperature stability, I_Z= 10.0 mA (less than

90 mW in dissipated power)

•

TERMINALS: Tin-Lead (military) or RoHS Compliant

annealed matte-Tin plating solderable per MIL-STD-

750, Method 2026

•

Solder temperatures: 260 ^oC for 10 s (maximum)

•

MARKING: Part number and cathode band

POLARITY: Reference diode to be operated with the

banded end positive with respect to the opposite end

•

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

WEIGHT: 0.2 grams.

See package dimensions on last page

7-18-2005 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N3154 thru 1N3157, A, -1, e3

8.4 Volt Temperature Compensated Zener

Reference Diodes

S C O T T S D A L E D I V I S I O N

*ELECTRICAL CHARACTERISTICS @ 25^oC, unless otherwise specified

VOLTAGE

MAXIMUM

REVERSE

CURRENT

I_R@ 5.5 V

MAXIMUM

ZENER

IMPEDANCE

(Note 2)

Z_ZT

TEMPERATURE

STABILITY

(Note 3 & 4)

ΔV_ZT

EFFECTIVE

TEMPERATURE

COEFFICIENT

α_VZ

ZENER

VOLTAGE

V_Z@ I_ZT

ZENER

TEST

CURRENT

I_ZT

JEDEC

TYPE

NUMBERS

(Notes 1, 5

& 6)

TEMPERATURE

RANGE

(Note 1)

MAXIMUM

VOLTS

OHMS

^oC

%/^oC

μA

1N3154

1N3154A

1N3155

1N3155A

1N3156

1N3156A

1N3157

1N3157A

8.00-8.80

130

172

-55 to +100

-55 to +150

-55 to +100

-55 to +150

-55 to +100

-55 to +150

-55 to +100

-55 to +150

0.01

0.005

0.002

0.001

*JEDEC Registered Data.

NOTES:

1. When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance,

e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.

2. Measured by superimposing 1.0 mA ac rms on 10 mA dc @ 25^oC.

3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the

specified mV change at any discrete temperature between the established limits.

4. Voltage measurements to be performed 15 seconds after application of dc current.

5. The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by

adding JAN, JANTX, or JANTXV prefix to part numbers as well as “-1” suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc.

6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH3157A instead of 1N3157A.

GRAPHS

The curve shown in Figure 1 is typical of the diode series and

greatly simplifies the estimation of the Temperature Coefficient

(TC) when the diode is operated at currents other than 10mA.

EXAMPLE: A diode in this series is operated at a current of

10mA and has specified Temperature Coefficient (TC) limits of

+/-0.005%/^oC. To obtain the typical Temperature Coefficient

limits for this same diode operated at a current of 7.5mA, the

new TC limits (%/^oC) can be estimated using the graph in

FIGURE 1.

At a test current of 7.5mA the change in Temperature Coefficient

(TC) is approximately –0.0012%.^oC. The algebraic sum of +/-

0.005%^oC and –0.0012%/^oC gives the new estimated limits of

+0.0038%/oC and -0.0062%/oC.

I_Z– Operating Current (mA)

FIGURE 1

TYPICAL CHANGE OF TEMPERATURE COEFFICIENT

WITH CHANGE IN OPERATING CURRENT.

7-18-2005 REV B

Microsemi

Scottsdale Division

Page 2

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1N3154 thru 1N3157, A, -1, e3

8.4 Volt Temperature Compensated Zener

Reference Diodes

S C O T T S D A L E D I V I S I O N

This curve in Figure 2 illustrates the change of

diode voltage arising from the effect of

impedance. It is in effect, an exploded view of

the zener operating region of the I-V

characteristic.

In conjunction with Figure 1, this curve can be

used to estimate total voltage regulation under

conditions of both varying temperature and

current.

I_Z– Operating Current (mA)

FIGURE 2

TYPICAL CHANGE OF ZENER VOLTAGE

WITH CHANGE IN OPERATING CURRENT.

DIMENSIONS

All dimensions in INCH

7-18-2005 REV B

Microsemi

Page 3

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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