1N4461 [MICROSEMI]
1.5 WATT ZENER DIODES; 1.5瓦齐纳二极管
| 元器件型号： | 1N4461 |
| 生产厂家： | 
MICROSEMI CORPORATION
|
| 描述和应用： | 1.5 WATT ZENER DIODES |
| PDF文件： | 总2页 (文件大小：125K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：1N4461参数 | |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 生命周期 | Active |
| 包装说明 | O-LALF-W2 |
| 针数 | 2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| HTS代码 | 8541.10.00.50 |
| 风险等级 | 5.12 |
| Is Samacsys | N |
| 其他特性 | METALLURGICALLY BONDED |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | ZENER DIODE |
| JEDEC-95代码 | DO-41 |
| JESD-30 代码 | O-LALF-W2 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 175 °C |
| 最低工作温度 | -65 °C |
| 封装主体材料 | GLASS |
| 封装形状 | ROUND |
| 封装形式 | LONG FORM |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性 | UNIDIRECTIONAL |
| 最大功率耗散 | 1.5 W |
| 标称参考电压 | 6.8 V |
| 表面贴装 | NO |
| 技术 | ZENER |
| 端子面层 | TIN LEAD OVER COPPER |
| 端子形式 | WIRE |
| 端子位置 | AXIAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 最大电压容差 | 5% |
| 工作测试电流 | 37 mA |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
• AVAILABLE IN
JAN, JANTX, JANTXV,
AND
JANS
PER MIL-PRF-19500/406
• 1.5 WATT ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6485
THRU
1N6491
AND
1N4460
AND
1N4461
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0 V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
0.060/0.085
1.52/2.16
POLARITY
BAND
(CATHODE)
0.125/0.160
3.18/4.06
0.800
20.32
0.028/0.032
0.71/0.81
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
ZENER
TEST
DYNAMIC
KNEE
TEST
REVERSE TEST
MAXIMUM VZ
(REG)
MAXIMUM
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
VZ
SURGE
±5%
IZT
(MAX.)
(MAX.)
IZK
(MAX.)
VR
IZM
VZ
ZZT@IZT
ZZK@IZT
IR@VR
µ
A
VOLTS
mA
OHMS
OHMS
mA
VOLTS
MA
VOLTS
AMPS
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
76.0
69.0
64.0
58.0
53.0
49.0
45.0
40.0
37.0
10
10
9
9
8
7
5
4
2.5
400
400
400
400
500
500
600
200
200
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
50
50
35
5.0
4.0
1.0
0.5
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.72
4.08
433
397
366
332
304
280
255
230
210
.90
.80
.75
.70
.60
.50
.40
.35
.30
4.2
3.9
3.6
3.3
3.0
2.7
2.5
2.3
2.1
TYPE
FIGURE 1
1N6485
1N6486
1N6487
1N6488
1N6489
1N6490
1N6491
1N4460
1N4461
DESIGN DATA
CASE:
Hermetically sealed, Glass “A”
Body per MIL-PRF- 19500/406
D-5A
LEAD MATERIAL:
Copper clad steel
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJL): 42
°C/W maximum at L = .375
THERMAL IMPEDANCE: (Z
OJX): 4.5
°C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
NOTE:
Zener voltage is measured with the device junction in thermal equilibrium at an
ambient temperature of 25
°C ± 3°C.
MOUNTING POSITION:
Any
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
71
1N6485
thru
1N6491
and
1N4460 and 1N4461
FIGURE 2
Pd. Power Dissipation
(WATTS)
1.5
1.0
O.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
175
POWER DERATING CURVE
1000
500
400
300
200
ZENER IMPEDANCE Z
ZT
(OHMS)
100
50
40
30
20
10
5
4
3
2
1
.1
.2
.5
1
2
5
10
20
50
100
OPERATING CURRENT I
ZT
(mA)
3.3 VOLT
5.1 VOLT
6.2 VOLT
FIGURE 3
ZENER IMPEDANCE VS. OPERATING CURRENT
72
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