1N6507S [MICROSEMI]

Trans Voltage Suppressor Diode;
1N6507S
型号: 1N6507S
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode

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中文:  中文翻译
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SG5768, SG5770, SG5772, SG5774  
SG6506/SG6507/SG6508/SG6509  
DIODE ARRAY CIRCUITS  
DESCRIPTION  
FEATURES  
The Linfinity series of diode arrays feature high breakdown, high speed  
diodes in a variety of configurations.  
60V minimum breakdown voltage  
500mA current capability per diode  
Fast switching speeds: typically less than  
10ns  
Each array configuration consists of either common anode diodes,  
common cathode diodes, or a combination of common anode and  
common cathode diodes.  
Low leakage current  
HIGH RELIABILITY FEATURES  
Individual diodes within the array have 60V minimum breakdown  
voltage, can handle 500mA of current and typically switch in less than  
10 nanoseconds.  
MIL-S-19500/474 QPL - 1N5768 - 1N6506  
- 1N5770 - 1N6507  
- 1N5772 - 1N6508  
Each of the array configurations is available in ceramic DIP or ceramic  
flatpack and can be processed to JANTXV, JANTX, or JAN flows at  
Linfinity’s MIL-S-19500 facility.  
- 1N5774 - 1N6509  
JANTXV, JANTX & JAN available  
LMI level "S" processing available  
CIRCUIT DIAGRAMS  
COMMON CATHODE  
SG5768/SG6506  
COMMON ANODE  
SG5770/SG6507  
COMMON ANODE / COMMON CATHODE  
SG5772/SG6508  
DUAL COMMON ANODE / COMMON CATHODE  
SG5774/SG6509  
6/90 Rev 1.1 2/94  
LINFINITY Microelectronics Inc.  
Copyright 1994  
11861 Western Avenue Garden Grove, CA 92841  
1
(714) 898-8121 FAX: (714) 893-2570  
DIODE ARRAY SERIES  
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)  
60V  
Breakdown Voltage (VBR) ...................................................  
Output Current (IO), TC = 25°C  
Operating Junction Temperature  
Hermetic (J, F Packages) ............................................  
150°C  
500mA  
Continuous ................................................................  
Storage Temperature Range ............................ -65°C to 200°C  
Note 1. Exceeding these ratings could cause damage to the device.  
Note 2. Applicable for each diode.  
THERMAL DATA  
J Package:  
Note A. Junction Temperature Calculation: TJ = TA + (PD x θJA).  
Note B. The above numbers for θJC are maximums for the limiting  
thermal resistance of the package in a standard mount-  
ing configuration. The θJA numbers are meant to be  
guidelines for the thermal performance of the device/pc-  
board system. All of the above assume no ambient  
airflow.  
Thermal Resistance-Junction to Case, θJC .................. 30°C/W  
Thermal Resistance-Junction to Ambient, θJA .............. 80°C/W  
F Package (10 Pin):  
Thermal Resistance-Junction to Case, θJC .................. 80°C/W  
Thermal Resistance-Junction to Ambient, θJA ............ 145°C/W  
F Package (14 Pin):  
Thermal Resistance-Junction to Case, θJC .................. 80°C/W  
Thermal Resistance-Junction to Ambient, θJA ............ 140°C/W  
RECOMMENDED OPERATING CONDITIONS (Note 3)  
Operating Ambient Temperature Range  
Operating Ambient Temperature Range  
SG5768 ..........................................................-55°C to 150°C  
SG5770 ..........................................................-55°C to 150°C  
SG5772 ..........................................................-55°C to 150°C  
SG5774 ..........................................................-55°C to 150°C  
SG6506 ..........................................................-55°C to 150°C  
SG6507 ..........................................................-55°C to 150°C  
SG6508 ..........................................................-55°C to 150°C  
SG6509 ..........................................................-55°C to 150°C  
Note 3. Range over which the device is functional.  
ELECTRICAL CHARACTERISTICS  
(Unlessotherwisespecified, thesespecificationsapplyfortheoperatingtemperatureofTA =25°Cforeachdiode. Lowdutycyclepulsetestingtechniques  
are used which maintains junction and case temperatures equal to the ambient temperature.)  
SG5768/SG6506  
Parameter  
Test Conditions  
Units  
Min. Typ. Max.  
Breakdown Voltage (VBR)  
Forward Voltage (VF)  
IR = 10µA  
Duty Cycle 2%, 300 µs pulse  
IF = 100mA  
IF = 200mA  
IF = 500mA  
IF = 10mA, TA = -55°C  
VR = 40V  
VR = 40V, TA = 150°C  
VR = 0V, f = 1MHz, Pin-to-pin  
60  
V
1.0  
1.1  
1.5  
1.0  
100  
50  
V
V
V
V
Reverse Current (IR)  
nA  
µA  
pf  
Capacitance (C) (Note 4)  
Forward Recovery Time (tfr)  
(Note 4)  
Reverse Recovery Time (trr)  
(Note 4)  
4
IF = 500mA, tr 15ns, Vfr = 1.8V, RS = 50Ω  
IF = IR = 200mA, irr = 20mA, RL = 100Ω  
40  
20  
ns  
Note 4. The parameters, although guaranteed, are not 100% tested in production.  
6/90 Rev 1.1 2/94  
LINFINITY Microelectronics Inc.  
Copyright 1994  
11861 Western Avenue Garden Grove, CA 92841  
2
(714) 898-8121 FAX: (714) 893-2570  
DIODE ARRAY SERIES  
ELECTRICAL CHARACTERISTICS (continued)  
SG5770/SG6507  
Units  
Test Conditions  
Parameter  
Min. Typ. Max.  
Breakdown Voltage (VBR)  
Forward Voltage (VF)  
IR = 10µA, 100ms pulse, 20% Duty Cycle  
Duty Cycle 2%, 300 µs pulse  
IF = 100mA  
IF = 200mA  
IF = 500mA  
IF = 10mA, TA = -55°C  
VR = 40V  
VR = 40V, TA = 150°C  
VR = 0V, f = 1MHz, Pin-to-pin  
60  
V
V
V
V
1.0  
1.1  
1.5  
1.0  
100  
50  
V
nA  
µA  
pf  
Reverse Current (IR)  
Capacitance (C) (Note 4)  
Forward Recovery Time (tfr)  
(Note 4)  
Reverse Recovery Time (trr)  
(Note 4)  
8
IF = 500mA, tr 15ns, Vfr = 1.8V, RS = 50Ω  
IF = IR = 200mA, irr = 20mA, RL = 100Ω  
ns  
ns  
40  
20  
7
Test Conditions  
SG5772/SG6508  
SG5774/SG6509  
Parameter  
Units  
Min. Typ. Max.  
V
Breakdown Voltage (VBR)  
Forward Voltage (VF)  
IR = 10µA, 100ms pulse, 20% Duty Cycle  
Duty Cycle 2%, 300µs pulse  
IF = 100mA  
IF = 200mA  
IF = 500mA  
IF = 10mA, TA = -55°C  
VR = 40V  
VR = 40V, TA = 150°C  
VR = 0V, f = 1MHz, Pin-to-pin  
60  
V
V
V
1.0  
1.1  
1.5  
1.0  
100  
50  
V
Reverse Current (IR)  
nA  
µA  
pf  
Capacitance (C) (Note 4)  
Forward Recovery Time (tfr)  
(Note 4)  
Reverse Recovery Time (trr)  
(Note 4)  
8
ns  
ns  
IF = 500mA, tr 15ns, Vfr = 1.8V, RS = 50Ω  
40  
7
20  
6/90 Rev 1.1 2/94  
LINFINITY Microelectronics Inc.  
Copyright 1994  
11861 Western Avenue Garden Grove, CA 92841  
3
(714) 898-8121 FAX: (714) 893-2570  
DIODE ARRAY SERIES  
CONNECTION DIAGRAMS & ORDERING INFORMATION (See Notes Below)  
Ambient  
Temperature Range  
Package  
Part No.  
Connection Diagram  
14-PIN CERAMIC DIP  
J - PACKAGE  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
SG6506J  
(1N6506)  
-55°C to 150°C  
-55°C to 150°C  
8
10-PIN CERAMIC FLATPACK  
F - PACKAGE  
SG5768F  
(1N5768)  
-55°C to 150°C  
-55°C to 150°C  
10  
9
1
2
3
4
8
7
6
5
14-PIN CERAMIC DIP  
J - PACKAGE  
SG6507J  
(1N6507)  
-55°C to 150°C  
-55°C to 150°C  
1
2
14  
13  
12  
11  
3
4
5
6
7
10  
9
8
10-PIN CERAMIC FLATPACK  
F - PACKAGE  
SG5770F  
(1N5770)  
-55°C to 150°C  
-55°C to 150°C  
10  
9
1
2
3
4
8
7
6
5
14-PIN CERAMIC DIP  
J - PACKAGE  
SG6508J  
(1N6508)  
-55°C to 150°C  
-55°C to 150°C  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
8
10-PIN CERAMIC FLATPACK  
F - PACKAGE  
SG5772F  
(1N5772)  
-55°C to 150°C  
-55°C to 150°C  
1
2
3
4
5
10  
9
8
7
6
Note 1. Consult factory for other packages available.  
2. All packages are viewed from the top.  
3. Consult factory for JAN, JAN TX, and JAN TXV product availability.  
6/90 Rev 1.1 2/94  
LINFINITY Microelectronics Inc.  
Copyright 1994  
11861 Western Avenue Garden Grove, CA 92841  
(714) 898-8121 FAX: (714) 893-2570  
4
DIODE ARRAY SERIES  
CONNECTION DIAGRAMS & ORDERING INFORMATION (continued)  
Ambient  
Temperature Range  
Package  
Part No.  
Connection Diagram  
14-PIN CERAMIC DIP  
J - PACKAGE  
SG6509J  
(1N6509)  
-55°C to 150°C  
-55°C to 150°C  
1
14  
13  
2
3
4
12  
11  
10  
9
5
6
7
8
14-PIN CERAMIC FLATPACK  
F - PACKAGE  
SG5774F  
(1N5774)  
-55°C to 150°C  
-55°C to 150°C  
1
2
3
14  
13  
12  
11  
10  
9
4
5
6
7
8
6/90 Rev 1.1 2/94  
LINFINITY Microelectronics Inc.  
Copyright 1994  
11861 Western Avenue Garden Grove, CA 92841  
5
(714) 898-8121 FAX: (714) 893-2570  

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