1N6508S [MICROSEMI]
暂无描述;
| 型号： | 1N6508S |
| 厂家： | 
Microsemi |
| 描述： | 暂无描述 二极管 测试 CD |
| 文件： | 总1页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6508
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
12
11
9
FEATURES:
8
· HERMETIC CERAMIC PACKAGE
· Bv > 60V at 10uA
· Ir < 100nA at 40V
· C < 8.0 pF
7
5
3
2
1
14
4
Absolute Maximum Ratings:
6
10
13
NOT CONNECTED
Symbol
Parameter
Limit
Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3 Continuous Forward Current
IFSM *1
60
Vdc
.320
.290
.310
.220
.005
MIN
.200
MAX
300
500
400
600
mAdc
mAdc
mW
.200
.125
Peak Surge Current (tp= 1/120 s)
Power Dissipation per Junction @ 25°C
Power Dissipation per Package @ 25°C
Operating Junction Temperature Range
Storage Temperature Range
.023
.014
PT1
PT2
Top
Tstg
*4
*4
mW
.785
MAX
.070
.030
-65 to +150 °C
-65 to +200 °C
.098
MAX
.100
BSC
NOTE 1: Each Diode
.060
.015
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
.015
.008
O-15
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min
Max Unit
Vf1
Vf2
IR1
Ct
tfr
trr
Forward Voltage
Forward Voltage
Reverse Current
Capacitance (pin to pin)
Forward Recovery Time
Reverse Recovery Time
If = 100mAdc *1
If = 500mAdc *1
VR = 40 Vdc
VR = 0 Vdc ; f = 1 MHz
If = 500mAdc
1
Vdc
1.5 Vdc
0.1 uAdc
8.0 pF
40
20
ns
ns
If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1019.PDF Rev - 11/25/98
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