1N6772R [MICROSEMI]
Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-257AA, TO-257, 3 PIN;
| 型号： | 1N6772R |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 8A, 400V V(RRM), Silicon, TO-257AA, TO-257, 3 PIN 局域网 功效 二极管 |
| 文件： | 总1页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/645
DEVICES
LEVELS
JAN
JANTX
JANTXV
1N6772
1N6773
1N6772R
1N6773R
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
ID = 5µAdc
1N6772, R
1N6773, R
400
600
VRWM
Vdc
Average Forward Current (1)
Peak Surge Forward Current
TC = +100°C
IF
8
Adc
IFSM
Rθjc
60
2.5
A(pk)
°C/W
TO-257
Thermal Resistance - Junction to Case
Note:
(1) Derate linearly @ 160mA/°C above TC = 100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Breakdown Voltage (2)
1N6772, R
1N6773, R
400
600
• 1
• 2
• 3
VBR
Vdc
Forward Voltage
IF = 4Adc (2)
VF1
VF2
1.45
1.60
Vdc
µAdc
µAdc
IF = 8Adc (2)
Reverse Leakage Current
VR = 320V (2)
1N6772, R
1N6773, R
IR1
10
VR = 480V (2)
• 1
• 2
• 3
Reverse Leakage Current
VR = 320V (2), TC = +100°C
VR = 480V (2), TC = +100°C
1N6772, R
1N6773, R
IR2
500
Reverse Recovery Time
IF = 1A, di/dt = 50A/µs
trr
60
nS
pF
Junction Capacitance
VR = 5Vdc, f = 1.0MHz
CJ
200
Note:
(2) Pulse Test; 300µS, duty cycle ≤ 2%
T4-LDS-0018 Rev. 1 (072044)
Page 1 of 1
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