1N936A-3%E3TR [MICROSEMI]

Zener Diode, 9.2V V(Z), 5%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN;
1N936A-3%E3TR
型号: 1N936A-3%E3TR
厂家: Microsemi    Microsemi
描述:

Zener Diode, 9.2V V(Z), 5%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN

二极管
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1N935 thru 1N940B-1, e3  
9.0 Volt Temperature Compensated Zener  
Reference Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The popular 1N935 thru 1N940B series of Zero-TC Reference Diodes  
provides a selection of 9.0 V nominal voltages and temperature coefficients  
to as low as 0.0002%/oC for minimal voltage change with temperature when  
operated at 7.5 mA. These glass axial-leaded DO-7 reference diodes are  
also available in JAN, JANTX, and JANTXV military qualifications. For  
commercial applications it is also available as RoHS Compliant with an e3  
suffix (not applicable to military). Microsemi also offers numerous other  
Zener Reference Diode products for a variety of other voltages from 6.2 V  
to 200 V.  
DO-7  
(DO-204AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
JEDEC registered 1N935 thru 1N940 series  
Standard reference voltage of 9.0V +/- 5%  
Provides minimal voltage changes over a broad  
temperature range  
For instrumentation and other circuit designs requiring  
a stable voltage reference  
1N935B, 937B, 938B, 939B, 940B also have military  
qualification to MIL-PRF-19500/156 up to the  
JANTXV level by adding JAN, JANTX, or JANTXV  
prefixes to part numbers as well as “-1” suffix, e.g.  
JANTX1N938B-1, etc.  
Maximum temperature coefficient selections available  
from 0.01%/ºC to 0.0002%/ºC  
Tight voltage tolerances available with nominal  
voltage of 9.2 V by adding tolerance 1%, 2%, 3%, etc.  
after the part number for further identification, e.g.  
1N938B-2%, 1N940B-1%, 1N939B-1-1%, etc.  
Internal metallurgical bonds  
JANS Equivalent available via SCD  
Radiation Hardened devices available by changing  
“1N” prefix to “RH”, e.g. RH938B, RH 940B, etc.  
Also consult factory for “RH” data sheet brochure  
Flexible axial-leaded mounting terminals  
Nonsensitive to ESD per MIL-STD-750 Method 1020  
RoHS compliant devices available by adding an “e3”  
suffix (not applicable to military)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating & StorageTemperature: -65oC to +175oC  
CASE: Hermetically sealed glass case with DO-7  
(DO-204AA) package  
DC Power Dissipation: 500 mW @ TL = 25oC and  
maximum current IZM of 50 mA. NOTE: For optimum  
voltage-temperature stability, IZ = 7.5 mA (less than  
75 mW in dissipated power)  
TERMINALS: Tin-lead (military) or RoHS  
Compliant annealed matte-Tin plating and  
solderable per MIL-STD-750, Method 2026  
Solder temperatures: 260 oC for 10 s (maximum)  
MARKING: Part number and cathode band  
POLARITY: Reference diode to be operated with  
the banded end positive with respect to the  
opposite end  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
WEIGHT: 0.2 grams.  
See package dimensions on last page  
Copyright © 2005  
7-18-2005 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N935 thru 1N940B-1, e3  
9.0 Volt Temperature Compensated Zener  
Reference Diodes  
S C O T T S D A L E D I V I S I O N  
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified  
VOLTAGE  
ZENER  
VOLTAGE  
VZ @ IZT  
(Notes  
MAXIMUM  
ZENER  
IMPEDANCE  
(Note 2)  
MAXIMUM  
REVERSE  
CURRENT  
IR @ 6 V  
TEMPERATURE  
STABILITY  
(Notes 3 & 4)  
ΔVZT  
EFFECTIVE  
TEMPERATURE  
COEFFICIENT  
αVZ  
ZENER  
TEST  
CURRENT  
IZT  
JEDEC  
TYPE  
NUMBERS  
(Notes  
TEMPERATURE  
RANGE  
1, 4 & 5)  
ZZT @ IZT  
MAXIMUM  
1 & 5)  
VOLTS  
mA  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
OHMS  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
μA  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
mV  
67  
139  
184  
33  
69  
92  
13  
27  
37  
6
13  
18  
3
7
9
oC  
0 to +75  
-55 to +100  
-55 to +150  
0 to +75  
-55 to +100  
-55 to +150  
0 to +75  
-55 to +100  
-55 to +150  
0 to +75  
-55 to +100  
-55 to +150  
0 to +75  
-55 to +100  
-55 to +150  
0 to +75  
-55 to +100  
-55 to +150  
%/oC  
0.01  
0.01  
0.01  
1N935  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
8.55-9.45  
1N935A  
1N935B  
1N936  
1N936A  
1N936B  
1N937  
1N937A  
1N937B  
1N938  
1N938A  
1N938B  
1N939  
1N939A  
1N939B  
1N940  
1N940A  
1N940B  
0.005  
0.005  
0.005  
0.002  
0.002  
0.002  
0.001  
0.001  
0.001  
0.0005  
0.0005  
0.0005  
0.0002  
0.0002  
0.0002  
1.3  
2.7  
3.7  
*JEDEC Registered Data.  
NOTES:  
1. When ordering devices with tighter tolerances than specified, use a nominal voltage of 9.2V and add a hyphenated suffix  
to the part number for desired tolerance at the end of the part number, e.g. 1N938B-2%, 1N939B-1%, 1N939B-1-1%, etc.  
2. Measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25oC.  
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the  
specified mV change at any discrete temperature between the established limits.  
4. Voltage measurements to be performed 15 seconds after application of dc current.  
5. The 1N935B, 937B, 938B, 939B, 940B also have military qualification to MIL-PRF-19500/156 up to the JANTXV level by  
adding JAN, JANTX, or JANTXV prefixes to part numbers as well as “-1” suffix, e.g. JANTX1N938B-1, etc.  
6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH938A instead of 1N938A.  
GRAPHS  
The curve shown in Figure 1 is typical of the diode series and  
greatly simplifies the estimation of the Temperature Coefficient  
(TC) when the diode is operated at currents other than 7.5mA.  
EXAMPLE: A diode in this series is operated at a current of  
7.5mA and has specified Temperature Coefficient (TC) limits of +/-  
0.005%/oC. To obtain the typical Temperature Coefficient limits for  
this same diode operated at a current of 6.0mA, the new TC limits  
(%/oC) can be estimated using the graph in FIGURE 1.  
At a test current of 6.0mA the change in Temperature Coefficient  
(TC) is approximately –0.0009%.oC. The algebraic sum of +/-  
0.005%oC and –0.0009%/oC gives the new estimated limits of  
+0.0041%/oC and -0.0059%/oC.  
IZ – Operating Current (mA)  
FIGURE 1  
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT  
WITH CHANGE IN OPERATING CURRENT.  
Copyright © 2005  
7-18-2005 REV B  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1N935 thru 1N940B-1, e3  
9.0 Volt Temperature Compensated Zener  
Reference Diodes  
S C O T T S D A L E D I V I S I O N  
This curve in Figure 2 illustrates the change of diode  
voltage arising from the effect of impedance. It is in  
effect an exploded view of the zener operating  
region of the I-V characteristic.  
In conjunction with Figure 1, this curve can be used  
to estimate total voltage regulation under conditions  
of both varying temperature and current.  
IZ – Operating Current (mA)  
FIGURE 2  
TYPICAL CHANGE OF ZENER VOLTAGE  
WITH CHANGE IN OPERATING CURRENT.  
DIMENSIONS  
All dimensions in INCH  
mm  
Copyright © 2005  
7-18-2005 REV B  
Microsemi  
Page 3  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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