1N938A-3%TR
更新时间：2024-09-18 17:12:29
品牌：MICROSEMI
描述：Zener Diode, 9.2V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN
概述
规格参数
数据手册1N938A-3%TR 概述
Zener Diode, 9.2V V(Z), 5%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN 齐纳二极管
1N938A-3%TR 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Active | 零件包装代码： | DO-7 |
| 包装说明： | O-LALF-W2 | 针数： | 2 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | 风险等级： | 5.65 |
| 其他特性： | METALLURGICAL BONDED | 外壳连接： | ISOLATED |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | ZENER DIODE | JEDEC-95代码： | DO-204AA |
| JESD-30 代码： | O-LALF-W2 | JESD-609代码： | e0 |
| 元件数量： | 1 | 端子数量： | 2 |
| 封装主体材料： | GLASS | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 最大功率耗散： | 0.5 W | 认证状态： | Not Qualified |
| 标称参考电压： | 9.2 V | 表面贴装： | NO |
| 技术： | ZENER | 端子面层： | TIN LEAD |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 电压温度Coeff-Max： | 0.092 mV/°C |
| 最大电压容差： | 5% | Base Number Matches： | 1 |
1N938A-3%TR 数据手册
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PDF下载1N935 thru 1N940B-1, e3
9.0 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The popular 1N935 thru 1N940B series of Zero-TC Reference Diodes
provides a selection of 9.0 V nominal voltages and temperature coefficients
to as low as 0.0002%/oC for minimal voltage change with temperature when
operated at 7.5 mA. These glass axial-leaded DO-7 reference diodes are
also available in JAN, JANTX, and JANTXV military qualifications. For
commercial applications it is also available as RoHS Compliant with an e3
suffix (not applicable to military). Microsemi also offers numerous other
Zener Reference Diode products for a variety of other voltages from 6.2 V
to 200 V.
DO-7
(DO-204AA)
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
•
•
JEDEC registered 1N935 thru 1N940 series
Standard reference voltage of 9.0V +/- 5%
•
•
•
•
Provides minimal voltage changes over a broad
temperature range
For instrumentation and other circuit designs requiring
a stable voltage reference
1N935B, 937B, 938B, 939B, 940B also have military
qualification to MIL-PRF-19500/156 up to the
JANTXV level by adding JAN, JANTX, or JANTXV
prefixes to part numbers as well as “-1” suffix, e.g.
JANTX1N938B-1, etc.
Maximum temperature coefficient selections available
from 0.01%/ºC to 0.0002%/ºC
Tight voltage tolerances available with nominal
voltage of 9.2 V by adding tolerance 1%, 2%, 3%, etc.
after the part number for further identification, e.g.
1N938B-2%, 1N940B-1%, 1N939B-1-1%, etc.
•
•
•
Internal metallurgical bonds
JANS Equivalent available via SCD
Radiation Hardened devices available by changing
“1N” prefix to “RH”, e.g. RH938B, RH 940B, etc.
Also consult factory for “RH” data sheet brochure
•
•
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
•
RoHS compliant devices available by adding an “e3”
suffix (not applicable to military)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
Operating & StorageTemperature: -65oC to +175oC
•
•
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
DC Power Dissipation: 500 mW @ TL = 25oC and
maximum current IZM of 50 mA. NOTE: For optimum
voltage-temperature stability, IZ = 7.5 mA (less than
75 mW in dissipated power)
TERMINALS: Tin-lead (military) or RoHS
Compliant annealed matte-Tin plating and
solderable per MIL-STD-750, Method 2026
•
Solder temperatures: 260 oC for 10 s (maximum)
•
•
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
•
WEIGHT: 0.2 grams.
See package dimensions on last page
Copyright © 2005
7-18-2005 REV B
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N935 thru 1N940B-1, e3
9.0 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
VOLTAGE
ZENER
VOLTAGE
VZ @ IZT
(Notes
MAXIMUM
ZENER
IMPEDANCE
(Note 2)
MAXIMUM
REVERSE
CURRENT
IR @ 6 V
TEMPERATURE
STABILITY
(Notes 3 & 4)
ΔVZT
EFFECTIVE
TEMPERATURE
COEFFICIENT
αVZ
ZENER
TEST
CURRENT
IZT
JEDEC
TYPE
NUMBERS
(Notes
TEMPERATURE
RANGE
1, 4 & 5)
ZZT @ IZT
MAXIMUM
1 & 5)
VOLTS
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
μA
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
mV
67
139
184
33
69
92
13
27
37
6
13
18
3
7
9
oC
0 to +75
-55 to +100
-55 to +150
0 to +75
-55 to +100
-55 to +150
0 to +75
-55 to +100
-55 to +150
0 to +75
-55 to +100
-55 to +150
0 to +75
-55 to +100
-55 to +150
0 to +75
-55 to +100
-55 to +150
%/oC
0.01
0.01
0.01
1N935
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
8.55-9.45
1N935A
1N935B
1N936
1N936A
1N936B
1N937
1N937A
1N937B
1N938
1N938A
1N938B
1N939
1N939A
1N939B
1N940
1N940A
1N940B
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
0.0005
0.0002
0.0002
0.0002
1.3
2.7
3.7
*JEDEC Registered Data.
NOTES:
1. When ordering devices with tighter tolerances than specified, use a nominal voltage of 9.2V and add a hyphenated suffix
to the part number for desired tolerance at the end of the part number, e.g. 1N938B-2%, 1N939B-1%, 1N939B-1-1%, etc.
2. Measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25oC.
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
4. Voltage measurements to be performed 15 seconds after application of dc current.
5. The 1N935B, 937B, 938B, 939B, 940B also have military qualification to MIL-PRF-19500/156 up to the JANTXV level by
adding JAN, JANTX, or JANTXV prefixes to part numbers as well as “-1” suffix, e.g. JANTX1N938B-1, etc.
6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH938A instead of 1N938A.
GRAPHS
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 7.5mA.
EXAMPLE: A diode in this series is operated at a current of
7.5mA and has specified Temperature Coefficient (TC) limits of +/-
0.005%/oC. To obtain the typical Temperature Coefficient limits for
this same diode operated at a current of 6.0mA, the new TC limits
(%/oC) can be estimated using the graph in FIGURE 1.
At a test current of 6.0mA the change in Temperature Coefficient
(TC) is approximately –0.0009%.oC. The algebraic sum of +/-
0.005%oC and –0.0009%/oC gives the new estimated limits of
+0.0041%/oC and -0.0059%/oC.
IZ – Operating Current (mA)
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
Copyright © 2005
7-18-2005 REV B
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N935 thru 1N940B-1, e3
9.0 Volt Temperature Compensated Zener
Reference Diodes
S C O T T S D A L E D I V I S I O N
This curve in Figure 2 illustrates the change of diode
voltage arising from the effect of impedance. It is in
effect an exploded view of the zener operating
region of the I-V characteristic.
In conjunction with Figure 1, this curve can be used
to estimate total voltage regulation under conditions
of both varying temperature and current.
IZ – Operating Current (mA)
FIGURE 2
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT.
DIMENSIONS
All dimensions in INCH
mm
Copyright © 2005
7-18-2005 REV B
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N938A-3%TR 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N938AE3/TR | MICROSEMI | Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| 1N938AUR-1 | MICROSEMI | Zener Diode | 获取价格 |
|
| 1N938AV | STMICROELECTRONICS | 9V, SILICON, VOLTAGE REFERENCE DIODE | 获取价格 |
|
| 1N938B | MICROSEMI | 9.0 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES | 获取价格 |
|
| 1N938B | CDI-DIODE | 9.0 VOLT NOMINAL ZENER VOLTAGE | 获取价格 |
|
| 1N938B | NJSEMI | 9.0VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES | 获取价格 |
|
| 1N938B-1 | CDI-DIODE | Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, DO-35, 2 PIN | 获取价格 |
|
| 1N938B-1 | MICROSEMI | Zener Diode, 9V V(Z), 5%, 0.5W, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 | 获取价格 |
|
| 1N938B-1% | MICROSEMI | 9.2V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
| 1N938B-1%E3 | MICROSEMI | 9.2V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN | 获取价格 |
|
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