2N1724E3 [MICROSEMI]

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,;
2N1724E3
型号: 2N1724E3
厂家: Microsemi    Microsemi
描述:

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,

文件: 总2页 (文件大小:54K)
中文:  中文翻译
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TECHNICAL DATA  
NPN SILICON HIGH POWER TRANSISTOR  
Qualified per MIL-PRF-19500/ 262  
Devices  
Qualified Level  
JAN  
JANTX  
2N1722  
2N1724  
MAXIMUM RATINGS  
Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
80  
Units  
Vdc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
175  
10  
Vdc  
Vdc  
TO-61*  
Adc  
5.0  
2N1724  
Total Power Dissipation  
@ TA = +250C(1)  
3.0  
50  
W
PT  
@ TC = +1000C (2)  
W
0C  
TOP  
,
Temperature Range:  
Operating  
Storage Junction  
175  
-65 to +200  
T
stg  
1) Derate linearly 20 mW/0C for TA between +250C and +1750C  
TO-53*  
2N1722  
2) Derate linearly 666 mW/0C for TC between +1000C and +1750C  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 200 mAdc  
Emitter-Base Breakdown Voltage  
IE = 10 mAdc  
80  
10  
Vdc  
Vdc  
V(BR)  
CEO  
V(BR)  
EBO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
Collector-Base Cutoff Current  
VCB = 175 Vdc  
Emitter-Base Cutoff Current  
VEB = 7.0 Vdc  
300  
5.0  
ICES  
ICBO  
IEBO  
mAdc  
mAdc  
mAdc  
400  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  
2N1722, 2N1724 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
ON CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
30  
15  
30  
120  
IC = 2.0 Adc, VCE = 15 Vdc  
IC = 5.0 Adc, VCE = 15 Vdc  
hFE  
IC = 100 mAdc, VCE = 15 Vdc  
Collector-Emitter Saturation Voltage  
IC = 2.0 Adc, IB = 200 mAdc  
Base-Emitter Saturation Voltage  
IC = 2.0 Adc, IB = 200 mVdc  
0.6  
1.2  
Vdc  
Vdc  
VCE(sat)  
VBE(sat)  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
1.0  
5.0  
IC = 500 mAdc, VCE = 15 Vdc; f = 10 MHz  
Output Capacitance  
VCB = 15 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz  
½hfe½  
550  
pF  
Cobo  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  

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