2N3846E3 [MICROSEMI]

Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,;


型号：	2N3846E3
厂家：	Microsemi
描述：	Power Bipolar Transistor, 20A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,
文件：	总2页 (文件大小：42K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 412

Devices

Qualified Level

JAN

2N3846

2N3847

JANTX

JANTXV

MAXIMUM RATINGS

2N3846 2N3847

Ratings

Symbol

Units

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

200

300

400

V_CEO

V_CBO

V_EBO

I_C

Vdc

4.0

150

Adc

⁰C

Total Power Dissipation

@ T_A= +25⁰C ⁽¹⁾

@ T_C= +100⁰C ⁽²⁾

P_T

Operating & Storage Temperature Range

-65 to +200

T_op,

stg

THERMAL CHARACTERISTICS

Characteristics

Thermal Resistance, Junction-to-Case

Symbol

Max.

Unit

⁰C/W

TO-63*

0.5

qJC

1) Derate linearly 26.6 mW/⁰C to +175⁰C

2) Derate linearly 2 W/⁰C to +175⁰C

*See Appendix A for Package

Outline

ELECTRICAL CHARACTERISTICS

Characteristics

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 200 mAdc; I_B= 0

Symbol

Min.

Max.

Unit

Vdc

2N3846

2N3847

V_(BR)

CEO

200

300

Collector-Emitter Cutoff Current

V_CE= 300 Vdc; V_BE= 0

V_CE= 400 Vdc; V_BE= 0

2N3846

2N3847

mAdc

I_CES

Collector-Emitter Cutoff Current

V_CE= 200 Vdc; I_B= 0

V_CE= 300 Vdc; I_B= 0

2N3846

2N3847

mAdc

I_CEO

Emitter-Base Cutoff Current

V_BE= 10 Vdc; I_C= 0

I_EBO

mAdc

250

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N3846, 2N3847 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS ⁽³⁾

Symbol

Min.

Max.

Unit

Forward-Current Transfer Ratio

I_C= 1 Adc; V_CE= 3.0 Vdc

I_C= 5 Adc; V_CE= 3.0 Vdc

I_C= 10 Adc; V_CE= 3.0 Vdc

Base-Emitter Sustaining Voltage

V_CE= 3 Vdc; I_C= 10 Adc

Base-Emitter Saturated Voltage

I_B= 1.6 Adc; I_C= 10 Adc

Collector-Emitter Saturated Voltage

I_B= 1.6 Adc; I_C= 10 Adc

h_FE

240

Vdc

V_BE

1.20

1.30

0.75

V_BE(sat)

V_CE(sat)

DYNAMIC CHARACTERISTICS

Magnitude of Common-Emitter Small-Signal Short-Circuit

Forward Current Transfer Ratio

½h_fe½

I_C= 1.0 Adc, V_CE= 10 Vdc, f = 1 MHz

Small-Signal Short-Circuit Forward Current Transfer Ratio

I_C= 5 Adc, V_CE= 10 Vdc, f = 1 kHz

Output Capacitance

V_CB= 10 Vdc, I_E= 0, 100 kHz £ f £ 1.0 MHz

h_fe

250

750

C_obo

SWITCHING CHARACTERISTICS

Turn-On Time

V_BE(off)~ -7.5 Vdc; I_C= 10 Adc;

I_B1= 2 Adc; I_B2= -2 Adc; R_L= 15W

Turn-Off Time

^ton

^toff

V_BE(off)~ -7.5 Vdc; I_C= 10 Adc;

I_B1= 2 Adc; I_B2= 2 Adc; R_L= 15W

SAFE OPERATING AREA

DC Tests

T_C= +100⁰C; V_CE= 0 Vdc, I_C= 0 Adc (See Figure 3 on Mil-PRF-19500/412)

Test 1

V_CE= 7.5 Vdc; I_C= 20 Adc; t_p= 1.0 s; 1 cycle

Test 2

V_CE= 200 Vdc; I_C= 100 mAdc; t_p= 1.0 s, 1 cycle

Test 3

V_CE= 58 Vdc; I_C= 1.0 Adc; t_p= 1.0 s, 1 cycle

Burnout by Pulsing (2N3847 only)

T_C= +100⁰C; V_CE= 300 Vdc; I_C= 20 mAdc; t_p= 1.0 s, 1 cycle

Unclamped Inductive Sweep

T_C= +100⁰C; I_C= 20 Adc; I_B= 2 Adc (See Figure 4 on Mil-PRF-19500/412)

Clamped Inductive Sweep

T_C= +100⁰C; I_C= 20 Adc; I_B= 2 Adc (See Figure 5 on Mil-PRF-19500/412)

3) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 2 of 2

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