2N6579 [MICROSEMI]

Power Bipolar Transistor, 12A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2;
2N6579
元器件型号: 2N6579
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

Power Bipolar Transistor, 12A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

PDF文件: 总1页 (文件大小:97K)
下载文档:  下载PDF数据表文档文件
型号参数:2N6579参数

2N657A

Small Signal Transistors

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9 ETC

2N657A

Small Signal Transistors

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14 ETC

2N658

TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5

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32 ETC

2N6580

TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-3

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38 ETC

2N6580E3

Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6580E3

Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6581

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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22 SEME-LAB

2N6581

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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12 SEME-LAB

2N6582

TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3

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34 ETC

2N6582

Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6583

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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17 SEME-LAB

2N6583

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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13 SEME-LAB

2N6583E3

Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI

2N6584

TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-3

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17 ETC

2N6584

Power Bipolar Transistor, 10A I(C), 350V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

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0 MICROSEMI