2N6768T1E3 [MICROSEMI]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;


型号：	2N6768T1E3
厂家：	Microsemi
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总9页 (文件大小：960K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

N-CHANNEL MOSFET

MICROSEMI

N-Channel Power MOSFETs, 12A, 450V/500V

FAIRCHILD

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

IXYS

TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 15A I(C) | TO-3

ETC

N-Channel Power MOSFETs, 12A, 450V/500V

FAIRCHILD

N-CHANNEL MOSFET

MICROSEMI

N-CHANNEL ENHANCEMENT MOSFET

NJSEMI

500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package - A 2N6770 with Hermetic Packaging

INFINEON

N-CHANNEL MOSFET

MICROSEMI

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

MICROSEMI

N-CHANNEL MOSFET

MICROSEMI

TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 1A I(C) | TO-220AB

ETC