2N7227_10 [MICROSEMI]
N-CHANNEL MOSFET; N沟道MOSFET
| 型号： | 2N7227_10 |
| 厂家： | 
Microsemi |
| 描述： | N-CHANNEL MOSFET |
| 文件： | 总4页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
DEVICES
LEVELS
2N7227
2N7227U
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Symbol
VDS
Value
400
Unit
Vdc
Vdc
Gate – Source Voltage
VGS
± 20
Continuous Drain Current
ID1
ID2
Ptl
14.0
9.0
Adc
Adc
W
TC = +25°C
TC = +100°C
TC = +25°C
Continuous Drain Current
Max. Power Dissipation
150 (1)
TO-254AA
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
0.315 (2)
Ω
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 9A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
400
Vdc
V
GS = 0V, ID = 1mAdc
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25mA
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
V
V
DS ≥ VGS, ID = 0.25mA, Tj = +125°C
DS ≥ VGS, ID = 0.25mA, Tj = -55°C
Gate Current
GS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
U-PKG (U3)
TO-276AB
V
IGSS1
IGSS2
±100
±200
nAdc
Drain Current
V
GS = 0V, VDS = 320V
IDSS1
IDSS2
25
0.25
µAdc
mAdc
VGS = 0V, VDS = 320V, Tj = +125°C
Static Drain-Source On-State Resistance
Ω
Ω
V
GS = 10V, ID = 9.0A pulsed
rDS(on)1
rDS(on)2
0.315
0.415
VGS = 10V, ID = 14.0A pulsed
Tj = +125°C
V
GS = 10V, ID = 9.0A pulsed
rDS(on)3
VSD
0.68
1.7
Ω
Diode Forward Voltage
V
Vdc
GS = 0V, ID = 14A pulsed
T4-LDS-0050 Rev. 2 (101154)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg(on)
Qgs
Qgd
110
18
65
nC
VGS = 10V, ID = 14A
DS = 50V
V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 14A, VGS = 10Vdc,
Gate drive impedance =
7.5Ω,
td(on)
tr
td(off)
tf
35
190
170
130
ns
V
DD = 200Vdc
di/dt ≤ 100A/µs, VDD
30V,
≤
Diode Reverse Recovery Time
trr
1200
ns
IF = 14A
T4-LDS-0050 Rev. 2 (101154)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Min Max
13.59 13.84
Ltr.
Note
Min
.535
Max
.545
BL
CH
.249
.035
.510
.260
.045
.570
6.32
0.89
6.60
1.14
LD
LL
12.95 14.48
3.81 BSC
LO
.150 BSC
.150 BSC
LS
3.81 BSC
MHD
MHO
TL
.139
.149
.685
.800
.050
.545
3.53
3.78
.665
.790
.040
.535
16.89 17.40
20.07 20.32
3, 4
3, 4
TT
1.02
13.59 13.84
Drain
1.27
TW
Term 1
Term 2
Term 3
Source
Gate
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Glass meniscus included in dimension D and E.
4. All terminals are isolated from the case.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-254AA
T4-LDS-0050 Rev. 2 (101154)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Min Max
Ltr.
Min
.620
Max
.630
BL
BW
15.75 16.00
11.30 11.56
3.60
.445
.455
.142
.020
.420
.162
CH
LH
.010
.410
.152
0.26
10.41 10.67
3.86 4.11
5.33 BSC
2.67 BSC
0.50
LL1
LL2
LS1
.210 BSC
.105 BSC
LS2
LW1
LW2
Q1
.370
.380
.145
9.40
9.65
3.68
.135
.030
.035
3.43
0.76
0.89
Q2
Term 1
Term 2
Term 3
Drain
Source
Gate
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. The lid shall be electrically isolated from the drain, gate and source.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Dimensions and configuration of surface mount package outline (TO-276AB) 2N7224U,
2N7225U, 2N7227U, and 2N7228U.
T4-LDS-0050 Rev. 2 (101154)
Page 4 of 4
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