2N7227 [MICROSEMI]
N-CHANNEL MOSFET; N沟道MOSFET
| 型号： | 2N7227 |
| 厂家： | 
Microsemi |
| 描述： | N-CHANNEL MOSFET |
| 文件： | 总2页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
DEVICES
LEVELS
JAN
2N7227 2N7227U
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Drain – Source Voltage
Symbol
VDS
Value
400
Unit
Vdc
Vdc
Gate – Source Voltage
VGS
± 20
Continuous Drain Current
ID1
ID2
Ptl
14.0
9.0
Adc
Adc
W
TC = +25°C
TC = +100°C
TC = +25°C
Continuous Drain Current
Max. Power Dissipation
150 (1)
Drain to Source On State Resistance
Operating & Storage Temperature
Rds(on)
0.315 (2)
Ω
TO-254AA
Top, Tstg
-55 to +150
°C
Note: (1) Derated Linearly by 1.2 W/°C for TC > +25°C
(2) VGS = 10Vdc, ID = 9A
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mAdc
V(BR)DSS
400
Vdc
Gate-Source Voltage (Threshold)
V
DS ≥ VGS, ID = 0.25mA
VDS ≥ VGS, ID = 0.25mA, Tj = +125°C
DS ≥ VGS, ID = 0.25mA, Tj = -55°C
VGS(th)1
VGS(th)2
VGS(th)3
2.0
1.0
4.0
5.0
Vdc
V
Gate Current
GS = ±20V, VDS = 0V
VGS = ±20V, VDS = 0V, Tj = +125°C
V
IGSS1
IGSS2
±100
±200
nAdc
U-PKG (U3)
TO-276AB
Drain Current
VGS = 0V, VDS = 320V
IDSS1
IDSS2
25
0.25
µAdc
mAdc
VGS = 0V, VDS = 320V, Tj = +125°C
Static Drain-Source On-State Resistance
Ω
Ω
V
GS = 10V, ID = 9.0A pulsed
rDS(on)1
rDS(on)2
0.315
0.415
VGS = 10V, ID = 14.0A pulsed
Tj = +125°C
VGS = 10V, ID = 9.0A pulsed
rDS(on)3
VSD
0.68
1.7
Ω
Diode Forward Voltage
VGS = 0V, ID = 14A pulsed
Vdc
T4-LDS-0050 Rev. 1 (072808)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
N-CHANNEL MOSFET
Qualified per MIL-PRF-19500/592
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Min.
Max.
Unit
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg(on)
Qgs
Qgd
110
18
65
nC
VGS = 10V, ID = 14A
VDS = 50V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 14A, VGS = 10Vdc,
td(on)
tr
td(off)
tf
35
190
170
130
ns
Gate drive impedance = 7.5Ω,
VDD = 200Vdc
di/dt ≤ 100A/µs, VDD ≤ 30V,
IF = 14A
Diode Reverse Recovery Time
trr
1200
ns
T4-LDS-0050 Rev. 1 (072808)
Page 2 of 2
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