3134-65M [MICROSEMI]

65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz; 65Watts ， 34伏，为200us ，10％雷达3100-3400 MHz的


型号：	3134-65M
厂家：	Microsemi
描述：	65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz 65Watts ， 34伏，为200us ，10％雷达3100-3400 MHz的晶体射频双极晶体管雷达 CD 局域网
文件：	总4页 (文件大小：71K)
中文：	中文翻译
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3134-65M Rev B

3134-65M

65Watts, 34 Volts, 200us, 10%

Radar 3100-3400 MHz

GENERAL DESCRIPTION

CASE OUTLINE

Common Base

The 3134-65M is an internally matched, COMMON BASE bipolar transistor

capable of providing 65Watts of pulsed RF output power at 200us pulse width,

10% duty factor across the 3100 to 3400 MHz band. This ceramic sealed

transistor is specifically designed for S-band radar applications. It utilizes gold

metallization and emitter ballasting to provide high reliability and supreme

ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Voltage and Current

Collector to Base Voltage (BV_ces)

65 V

3.0 V

7 A

Emitter to Base Voltage (BV_ebo

Peak Collector Current (I_c)

)

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

-65 to +200 °C

+200 °C

ELECTRICAL CHARACTERISTICS @ 25°C

SYMBOL CHARACTERISTICS

TEST CONDITIONS

MIN TYP MAX UNITS

P_out

Power Output

F=3100-3400 MHz

Pulse Width = 200us

Duty Factor = 10 %

Power Input = 10.3W

Vcc = +34V

8.0

-7

P_g

Power Gain

8.5

Collector Efficiency

Return Loss

η_c

R_l

VSWR-S

VSWR-T

Load Mismatch Stability

Load Mismatch Tolerance

1.5:1

2.0:1

F = 3100, 3300, 3400 MHz

FUNCTIONAL CHARACTERISTICS @ 25°C

Ices

Collector to Emitter Leakage

Vce=36V

BV_ces

θjc¹

Collector to Emitter Breakdown Ic = 30 mA

Thermal Resistance

0.5

°C/W

Typical Test Data:

Frequency

Pin (W)

Pout (W)

Ic (A)

RL (dB) Nc (%)

G (dB)

3100 MHz

3200 MHz

3300 MHz

3400 MHz

0.49

0.51

0.47

0.43

-10

-18

-19

-18

8.6

8.9

8.8

8.5

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

3134-65M Rev B

3134-65M

Broadband Test Fixture Impedance

Frequency (GHz)

Zin

Zout

3.1

3.2

3.3

3.4

10.34 – j 7.88

10.27 – j 7.34

10.24 – j 6.82

10.23 – j 6.32

6.72 – j 10.80

6.56 – j 10.46

6.41 – j 10.14

6.28 – j 9.84

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

3134-65M Rev B

3134-65M

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

3134-65M Rev B

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit

our web site at www.microsemi.com or contact our factory direct.

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