3PMT170C [MICROSEMI]

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3;
3PMT170C
型号: 3PMT170C
厂家: Microsemi    Microsemi
描述:

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-3

文件: 总3页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
3PMT5.0 thru 3PMT170  
POWERMITE®  
1500 Watt Transient Absorption Zener  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
POWERMITE ®  
These 1500 watt transient voltage suppressors offer power-handling capabilities only  
found in larger packages. They are most often used for protecting against transients  
from inductive switching environments or induced secondary lightning effects as  
found in lower surge levels of IEC61000-4-5. With very fast response times, they are  
also effective in protection from ESD or EFT. Powermite® package features include a  
full metallic bottom that eliminates the possibility of solder-flux entrapm ent during  
assembly. They also provide unique locking tab acting as an integral heat sink. With  
its very short terminations, parasitic inductance is minimized to reduce voltage  
overshoots during fast-rise-time transients.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEF ITS  
·
·
·
·
·
·
Very low profile surface mount package (1.1mm)  
Integral heat sink-locking tabs  
Compatible with automatic insertion equipment  
Full metallic bottom eliminates flux entrapment  
Voltage range 5 volts to 170 volts  
· Secondary lightning transient protection  
· Inductive switching transient protection  
· Small footprint  
· Very low parasitic inductance for minimal  
voltage overshoot  
· Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively and  
Available in both unidirectional or bi-directional  
(C suffix for bi-directional)  
IEC61000-4-5 for surge levels defined herein  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
1500 Watt peak pulse power (10 / 1000 µsec.)  
Forward Surge Current: 200 Amps (8.3 ms)  
(excluding bidirectional)  
Repetition surge rate (duty factor): 0.01%  
Lead and mounting temperature: 260°C for 10 sec  
· Terminals tin-lead plated  
·
·
·
· Two-lead side internally connected together  
· Cathode designated with band (unidirectional)  
· Molded epoxy package meets UL94V-0  
· Weight: 0.072 grams (approximate)  
· Thermal resistance: 2.5°C / watt junction to tab  
130°C / watt junction to ambient with  
recommended footprint  
·
·
· Tape & Reel packaging per EIA-481-2  
(16 mm - 6000 units/reel)  
PEAK PULSE POWER RATI N G S  
100  
10  
100  
75  
50  
1.0  
.10  
25  
0
0
50 100 150 200  
100ns  
1µs  
10µs  
100µs  
1ms  
10ms  
T – Temperature – ºC  
td – Pulse Time – sec  
Copyright ã 2001  
MSCXXXX.PDF 09-09 2002 REV 0  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
3PMT5.0 thru 3PMT170  
POWERMITE®  
1500 Watt Transient Absorption Zener  
S C O T T S D A L E D I V I S I O N  
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified  
STAND  
OFF  
BREAKDOWN  
VOLTAGE  
VBR  
CLAMPING  
VOLTAGE  
VC  
PEAK PULSE  
CURRENT  
IPP  
STANDBY  
CURRENT  
ID  
TEMPERATURE  
COEFFICIENT  
OF VBR  
VOLTAGE  
VWM  
MICROSEMI  
PART NUMBER  
@1 mA  
@ IPP  
@ VWM  
(FIGURE 2)  
VOLTS  
MAX  
(FIGURE 2)  
AMPS  
aVBR  
%/°C  
MAX  
VOLTS  
VOLTS  
MIN  
µA  
MAX  
3PMT5.0  
5
6
6.40  
6.67  
7.22  
7.78  
8.33  
8.89  
9.94  
10.0  
11.1  
12.2  
13.3  
14.4  
15.8  
16.7  
17.8  
18.9  
20.0  
22.2  
24.4  
26.7  
28.9  
31.1  
33.3  
36.7  
40.0  
44.4  
47.8  
50.0  
53.3  
56.7  
60.0  
64.4  
66.7  
71.1  
77.8  
83.3  
86.7  
94.4  
100  
9.60  
11.4  
12.3  
13.3  
14.3  
15.0  
15.9  
16.9  
18.8  
20.1  
22.0  
23.8  
25.8  
26.9  
28.8  
30.5  
32.2  
35.8  
39.4  
43.0  
46.6  
50.0  
53.5  
59.0  
64.3  
71.4  
76.7  
80.3  
85.5  
91.1  
96.3  
103  
156.2  
131.6  
122.0  
112.8  
104.9  
100.0  
94.3  
1000  
1000  
500  
200  
100  
50  
25  
10  
5
.057  
.059  
.061  
.065  
.067  
.070  
.073  
.076  
.078  
.081  
.082  
.084  
.086  
.087  
.088  
.090  
.092  
.093  
.094  
.096  
.097  
.098  
.099  
.100  
.101  
.101  
.102  
.102  
.103  
.103  
.104  
.104  
.104  
.105  
.105  
.105  
3PMT6.0  
3PMT6.5  
3PMT7.0  
6.5  
7
3PMT7.5  
3PMT8.0  
3PMT8.5  
3PMT9.0  
3PMT10  
3PMT11  
3PMT12  
3PMT13  
3PMT14  
3PMT15  
3PMT16  
3PMT17  
3PMT18  
3PMT20  
3PMT22  
3PMT24  
3PMT26  
3PMT28  
3PMT30  
3PMT33  
3PMT36  
3PMT40  
3PMT43  
3PMT45  
3PMT48  
3PMT51  
3PMT54  
3PMT58  
3PMT60  
3PMT64  
3PMT70  
3PMT75  
3PMT78  
3PMT85  
3PMT90  
3PMT100  
3PMT110  
3PMT120  
3PMT130  
3PMT150  
3PMT160  
3PMT170  
7.5  
8
8.5  
9.0  
10  
11  
12  
13  
14  
15  
16  
17  
18  
20  
22  
24  
26  
28  
30  
33  
36  
40  
43  
45  
48  
51  
54  
58  
60  
64  
70  
75  
78  
85  
90  
100  
110  
120  
130  
150  
160  
170  
88.7  
79.8  
74.6  
68.2  
5
5
63.0  
58.1  
55.8  
52.1  
49.2  
46.6  
41.9  
48.1  
34.9  
32.2  
30.0  
28.0  
25.2  
23.3  
21.0  
19.6  
18.7  
17.5  
16.5  
15.6  
14.6  
14.0  
13.2  
12.0  
11.2  
10.8  
9.9  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
107  
5
114  
5
125  
5
134  
5
139  
5
.106  
.106  
.107  
151  
5
160  
9.4  
5
111  
179  
8.4  
5
.107  
.107  
.107  
.108  
.108  
.108  
.108  
122  
196  
7.7  
5
133  
214  
7.0  
5
144  
231  
6.5  
5
167  
268  
5.6  
5
178  
287  
5.2  
5
189  
304  
4.9  
5
For bi-directional indicate a C suffix after the part number (i.e.: 3PMT170C). Capacitance will be ½ that shown in figure 1.  
Copyright ã 2001  
MSCXXXX.PDF 09-09 2002 REV 0  
Microsemi  
Page 2  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
3PMT5.0 thru 3PMT170  
POWERMITE®  
1500 Watt Transient Absorption Zener  
S C O T T S D A L E D I V I S I O N  
DEFINITIONS  
DEFINITION  
Symbol  
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating  
temperature range.  
VRWM  
VBR  
VC  
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.  
Minimum Clamping Voltage: The maximum voltage the device will exhibit at the peak pulse current.  
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and  
temperature.  
ID  
10000  
Measured at Zero Bias  
100  
Peak Value -- Ipp  
1000  
/
10 1000 Waveform  
50  
Ipp  
2
Half-Value --  
100  
10  
Measured at Stand - off Voltage  
0
0
500  
1000  
1500  
t
r
10  
1000  
1
100  
t
d
B R  
V
: Breakdown Voltage in volts  
t -- Time in microseconds  
figure 1  
figure 2  
OUTLINE AND PAD LAYOUT  
J
A
INCHES  
MILLIMETERS  
P
K
B
C
DIM  
A
B
C
D
E
NOMINAL  
0.070  
0.173  
0.200  
0.035  
0.160  
0.072  
0.056  
0.044  
0.190  
0.210  
0.038  
0.034  
0.030  
0.030  
NOMINAL  
1.778  
4.392  
5.080  
0.889  
4.064  
1.829  
1.422  
1.118  
4.826  
5.344  
0.965  
0.864  
0.762  
0.762  
N
L
D
F
M
G
H
J
K
L
M
N
P
Mounting Pad  
E
G
H
F
Copyright ã 2001  
MSCXXXX.PDF 09-09 2002 REV 0  
Microsemi  
Page 3  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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