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元器件品牌
APT10026L2LL
[MICROSEMI]
Power MOS 7 is a new generation of low loss, high voltage, N-Channel; 功率MOS 7是新一代低损耗,高电压, N沟道的
元器件型号:
APT10026L2LL
生产厂家:
MICROSEMI CORPORATION
描述和应用:
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
功率MOS 7是新一代低损耗,高电压, N沟道的
晶体 晶体管 功率场效应晶体管
PDF文件:
总5页 (文件大小:105K)
下载文档:
下载PDF数据表文档文件
型号参数:APT10026L2LL参数
查看货源
APT10026L2LL_03
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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ADPOW
APT10026L2LLG
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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MICROSEMI
APT10026RKVR
Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps|MOSFETs
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15
ETC
APT1002R4AN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.5A I(D) | TO-3
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12
ETC
APT1002R4BN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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49
ADPOW
APT1002R4BN-GULLWING
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
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0
ADPOW
APT1002R4BNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6.5A I(D) | TO-247AD
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8
ETC
APT1002R4BNR-BUTT
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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0
ADPOW
APT1002R4BNR-GULLWING
Power Field-Effect Transistor, 6.5A I(D), 1000V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN
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156
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0
ADPOW
APT1002R4CN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO
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8
ETC
APT1002RAN
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6A I(D) | TO-3
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21
ETC
APT1002RBN
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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49
ADPOW
APT1002RBN-BUTT
Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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0
ADPOW
APT1002RBN-GULLWING
暂无描述
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0
ADPOW
APT1002RBNR
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD
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14
ETC
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