APT100DL60B 概述
Ultrasoft Recovery Rectifi er Diode 超软恢复Rectifi器二极管 整流二极管
APT100DL60B 规格参数
是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | TO-247 |
包装说明: | R-PSFM-T2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.42 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY, LOW NOISE, LOW LEAKAGE CURRENT | 应用: | ULTRA SOFT RECOVERY |
外壳连接: | CATHODE | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JEDEC-95代码: | TO-247 | JESD-30 代码: | R-PSFM-T2 |
最大非重复峰值正向电流: | 600 A | 元件数量: | 1 |
相数: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 600 V |
最大反向恢复时间: | 0.487 µs | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
APT100DL60B 数据手册
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PDF下载APT100DL60B(G)
APT100DL60S(G)
600V 100A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
(B)
PRODUCT APPLICATIONS
PRODUCT BENEFITS
• Soft Switching - High Q
rr
PRODUCT FEATURES
• Ultrasoft Recovery Times (t
D3PAK
)
• Anti-Parallel Diode
-Switchmode Power Supply
rr
• Low Noise Switching
- Reduced Ringing
• Popular TO-247 Package or
-Inverters
1
Surface Mount D3PAK Package
• Ultra Low Forward Voltage
• Low Leakage Current
(S)
2
2
1
• Applications
• Higher Reliability Systems
- Induction Heating
• Minimizes or eliminates
snubber
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
2
1
1 - Cathode
2 - Anode
Back of Case -Cathode
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
Symbol Characteristic / Test Conditions
Ratings
Unit
Maximum D.C. Reverse Voltage
VR
VRRM
VRWM
IF(AV)
Maximum Peak Repetitive Reverse Voltage
600
Volts
Maximum Working Peak Reverse Voltage
1
100
131
Maximum Average Forward current
(TC = 124°C, Duty Cycle = 0.5)
IF(RMS)
IFSM
RMS Forward Currrent (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
Amps
°C
600
TJ, TSTG
TL
-55 to 175
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
IF = 100A
1.25
2.0
1.6
VF
Forward Voltage
IF = 200A
Volts
IF = 100A, TJ = 25°C
VR = 600V
1.28
25
IRM
CT
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
μA
VR = 600V, TJ = 125°C
250
97
pF
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
APT100DL60B_S(G)
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
trr
trr
Reverse Recovery Time
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
110
487
2328
11
ns
Reverse Recovery Time
IF = 100A, diF/dt = -200A/
μs VR = 400V, TC = 25°C
Qrr
IRRM
trr
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
nC
Amps
ns
716
5954
18
IF = 100A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
Qrr
IRRM
trr
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
nC
Amps
ns
333
10002
49
IF = 100A, diF/dt = -1000A/
μs VR = 400V, TC = 125°C
Qrr
IRRM
Reverse Recovery Charge
Maximum Reverse Recovery Current
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
Junction-to-Case Thermal Resistance
0.34
°C/W
oz
RθJC
WT
0.22
5.9
Package Weight
g
10
lb·in
N·m
Torque
Maximum Mounting Torque
1.1
1
Continuous current limited by package lead temperature.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.40
0.35
0.30
0.25
0.20
Note:
0.15
t
1
0.10
0.05
0
t
2
t
1
t
/
2
Duty Factor D =
Peak T = P x Z
+ T
C
J
DM
θJC
10-5
10-4
10-3
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
10-2
10-1
1.0
TYPICAL PERFORMANCE CURVES
APT100DL60B_S(G)
250
1000
800
600
400
200
T
= 125°C
= 400V
J
225
V
R
TJ= 125°C
200
TJ= 55°C
100A
50A
175
TJ= 25°C
TJ= 150°C
150
125
100
75
200A
50
25
0
0
0
0.5
1
1.5
2
2.5
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
V , ANODE-TO-CATHODE VOLTAGE (V)
F
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
FIGURE 2, Forward Current vs. Forward Voltage
14000
12000
10000
8000
6000
4000
2000
0
70
T
= 125°C
= 400V
T
= 125°C
= 400V
200A
J
J
V
V
200A
R
R
60
50
40
30
20
10
100A
50A
100A
50A
0
0
200
400
600
800
1000
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
-diF/dt, CURRENT RATE OF CHANGE (A/ꢀs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1. 2
400
350
300
250
200
150
100
50
1.0
tRR
0.5
IRRM
0.4
QRR
0.3
0.2
0
0
0
25
50
75
100
125
150
25
50
75
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
100
125
150
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 6, Dynamic Parameters vs Junction Temperature
1000
900
800
700
600
500
400
300
200
100
0
1
10
100
400
V , REVERSE VOLTAGE (V)
R
FIGURE 8, Junction Capacitance vs. Reverse Voltage
APT100DL60B_S(G)
V
r
diF/dt Adjust
+18V
0V
D.U.T.
t
Q
/
rr rr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
IF - Forward Conduction Current
1
4
5
6
diF/dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3
4
IRRM - Maximum Reverse Recovery Current.
0.25 I
RRM
t
- Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
3
rr
Slope = diM/
dt
2
5
6
Q
- Area Under the Curve Defined by IRRM and t .
rr
rr
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of t
rr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
D3PAK Package Outline
e1 100% Sn
5.31 (.209)
15.49 (.610)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
13.30 (.524)
13.60(.535)
16.26 (.640)
1.49 (.059)
2.49 (.098)
16.05(.632)
1.00 (.039)
1.15(.045)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.65 (.026)
4.50 (.177) Max.
1.20 (.047)
1.40 (.055)
0.020 (.001)
0.250 (.010)
1.90 (.075)
2.10 (.083)
2.40 (.094)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
2.70 (.106)
1.15 (.045)
1.45 (.057)
19.81 (.780)
20.32 (.800)
2.70 (.106)
2.90 (.114)
(Base of Lead)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
(2 Plcs.)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
2.21 (.087)
2.59 (.102)
Anode
Cathode
Dimensions in Millimeters (Inches)
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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