APT10DC120HJ [MICROSEMI]

ISOTOP SiC Diode Full Bridge Power Module; ISOTOP碳化硅二极管全桥电源模块
APT10DC120HJ
元器件型号: APT10DC120HJ
生产厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用:

ISOTOP SiC Diode Full Bridge Power Module
ISOTOP碳化硅二极管全桥电源模块

电源电路 整流二极管 桥式整流二极管 局域网
PDF文件: 总3页 (文件大小:71K)
下载文档:  下载PDF数据表文档文件
型号参数:APT10DC120HJ参数

APT10DC60HJ

ISOTOP SiC Diode Full Bridge Power Module

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8 MICROSEMI

APT10GT60BR

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-247AD

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26 ETC

APT10GT60KR

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB

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15 ETC

APT10M07

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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25 ADPOW

APT10M07

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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23 ADPOW

APT10M07JVFR

High Voltage N-Channel enhancement mode power MOSFET

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46 ADPOW

APT10M07JVFR

High Voltage N-Channel enhancement mode power MOSFET

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18 ADPOW

APT10M07JVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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74 ADPOW

APT10M09B2VFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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17 ADPOW

APT10M09B2VFR

POWER MOS V FREDFET

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31 ADPOW

APT10M09B2VFR_04

POWER MOS V FREDFET

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15 ADPOW

APT10M09B2VFRG

Power Field-Effect Transistor, 100A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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0 MICROSEMI

APT10M09B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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36 ADPOW

APT10M09LVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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12 ADPOW

APT10M09LVFR

POWER MOS V FREDFET

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34 ADPOW