APT13F120S [MICROSEMI]
N-Channel FREDFET; N沟道FREDFET
| 型号： | APT13F120S |
| 厂家： | 
Microsemi |
| 描述： | N-Channel FREDFET |
| 文件： | 总4页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT13F120B
APT13F120S
1200V, 13A, 1.40Ω Max, t , ≤250ns
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N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
D3PAK
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft
rr
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C /C result in excellent noise immunity and low switching loss. The
rss iss
APT13F120B
APT13F120S
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
S
Single die FREDFET
G
FEATURES
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Fast switching with low EMI
• Half bridge
• Low t for high reliability
rr
• PFC and other boost converter
• Buck converter
• Ultra low C
rss
for improved noise immunity
• Low gate charge
• Single and two switch forward
• Flyback
• Avalanche energy rated
• RoHS compliant
Absolute Maximum Ratings
Symbol Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
13
8
ID
Continuous Drain Current @ TC = 100°C
A
Pulsed Drain Current 1
IDM
VGS
EAS
IAR
50
±30
1070
7
V
mJ
A
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
Min
Typ
Max
625
Unit
PD
Total Power Dissipation @ TC = 25°C
W
RθJC
0.20
Junction to Case Thermal Resistance
°C/W
°C
RθCS
0.11
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
-55
150
300
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
oz
g
0.22
6.2
WT
Package Weight
in·lbf
N·m
10
Torque
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
1.1
Microsemi Website - http://www.microsemi.com
Static Characteristics
T = 25°C unless otherwise specified
J
APT13F120B_S
Parameter
Test Conditions
Min
Typ
Max
Unit
V
Symbol
VBR(DSS)
V
= 0V, I = 250µA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
1200
GS
D
∆VBR(DSS)/∆TJ
Reference to 25°C, I = 250µA
D
V/°C
Ω
1.41
1.11
4
V
= 10V, I = 7A
D
RDS(on)
VGS(th)
1.40
5
GS
V
3
V
= VDS, I = 1mA
D
GS
∆VGS(th)/∆TJ
mV/°C
-10
V
= 1200V
= 0V
T = 25°C
J
250
1000
±100
DS
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
µA
nA
V
T = 125°C
J
GS
V
= ±30V
GS
Dynamic Characteristics
T = 25°C unless otherwise specified
J
Symbol
Parameter
Test Conditions
Min
Typ
15
Max
Unit
gfs
V
= 50V, I = 7A
S
Forward Transconductance
Input Capacitance
DS
D
Ciss
Crss
Coss
4765
55
V
= 0V, V = 25V
DS
GS
Reverse Transfer Capacitance
Output Capacitance
f = 1MHz
350
pF
4
Co(cr)
135
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
V
= 0V, V = 0V to 800V
DS
GS
5
Co(er)
70
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
145
24
70
26
15
85
24
V
= 0 to 10V, I = 7A,
GS
D
nC
ns
V
= 600V
DS
Resistive Switching
V = 800V, I = 7A
DD
tr
td(off)
tf
D
R
= 4.7Ω 6 , V
= 15V
GG
G
Source-Drain Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Continuous Source Current
(Body Diode)
D
S
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
IS
13
A
G
Pulsed Source Current
(Body Diode) 1
ISM
VSD
trr
50
I
= 7A, T = 25°C, V
= 0V
Diode Forward Voltage
1.0
250
520
V
SD
J
GS
T = 25°C
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
ns
T = 125°C
J
3
I
= 7A
T = 25°C
J
1.12
3.03
10
SD
Qrr
µC
A
diSD/dt = 100A/µs
= 100V
T = 125°C
J
V
T = 25°C
J
DD
Irrm
T = 125°C
J
13.5
I
≤ 7A, di/dt ≤1000A/µs, V = 800V,
DD
SD
dv/dt
V/ns
25
T = 125°C
J
1
2
3
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Starting at TJ = 25°C, L = 43.59mH, RG = 4.7Ω, IAS = 7A.
Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4
5
Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.17E-7/VDS^2 + 2.63E-8/VDS + 3.74E-11.
6
RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT13F120B_S
12
10
8
35
30
25
20
15
10
V
= 10V
T
= 125°C
GS
J
TJ = -55°C
V
GS= 6, 7, 8 & 9V
6
5V
TJ = 25°C
4
4.5V
30
2
0
5
0
TJ = 125°C
TJ = 150°C
0
5
10
15
20
25
30
0
0
0
5
10
15
20
25
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
, DRAIN-TO-SOURCE VOLTAGE (V)
DS(ON)
DS
Figure 1, Output Characteristics
Figure 2, Output Characteristics
3.0
2.5
2.0
1.5
1.0
50
40
30
20
NORMALIZED TO
= 10V 7A
VDS> ID(ON)
x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
@
GS
TJ = -55°C
TJ = 25°C
TJ = 125°C
10
0
0.5
0
-55 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
1
2
3
4
5
6
7
8
V
, GATE-TO-SOURCE VOLTAGE (V)
J
GS
Figure 3, R
vs Junction Temperature
Figure 4, Transfer Characteristics
DS(ON)
6,000
1,000
18
16
14
12
10
8
Ciss
TJ = -55°C
TJ = 25°C
TJ = 125°C
100
10
6
Coss
4
2
Crss
800 1000 1200
0
0
2
4
6
8
200
V , DRAIN-TO-SOURCE VOLTAGE (V)
DS
400
600
I , DRAIN CURRENT (A)
D
Figure 5, Gain vs Drain Current
Figure 6, Capacitance vs Drain-to-Source Voltage
16
14
12
10
8
50
I
= 7A
D
45
40
35
30
VDS = 240V
VDS = 600V
25
TJ = 25°C
20
6
TJ = 150°C
VDS = 960V
15
4
10
2
5
0
0
0
20 40 60 80 100 120 140 160 180 200
0
0.2
V , SOURCE-TO-DRAIN VOLTAGE (V)
SD
0.4
0.6
0.8
1.0
1.2
Q , TOTAL GATE CHARGE (nC)
g
Figure 7, Gate Charge vs Gate-to-Source Voltage
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
APT13F120B_S
100
10
100
10
I
I
DM
DM
R
13µs
ds(on)
100µs
1ms
13µs
100µs
10ms
100ms
1ms
T = 150°C
1
1
J
T
C = 25°C
DC line
10ms
R
ds(on)
Scaling for Different Case & Junction
Temperatures:
100ms
DC line
T = 125°C
C = 75°C
J
I
D = ID(T = 25°C)*(T - TC)/125
T
J
C
0.1
0.1
1
10
100
1200
1
10
100
1200
V
, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
DS
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
TJ (°C)
TC (°C)
ZEXT are the external thermal
0.0166
0.0688
0.114
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Dissipated Power
(Watts)
0.00457
0.0176
0.270
Figure 11, Transient Thermal Impedance Model
0.25
0.20
0.15
0.10
D = 0.9
0.7
0.5
0.3
Note:
t
1
t
2
t
= Pulse Duration
t
1
0.05
0
1
t
/
2
Duty Factor D =
SINGLE PULSE
0.1
Peak T = P
x Z
+ T
θJC C
J
DM
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
3
D PAK Package Outline
TO-247 (B) Package Outline
e3
100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.15 (.242) BSC
6.20 (.244)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.81 (.150)
4.50 (.177) Max.
3.12 (.123)
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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