APT200GN60JDQ4 概述
Power Semiconductors Power Modules 功率半导体功率模块 IGBT
APT200GN60JDQ4 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | ISOTOP |
包装说明: | FLANGE MOUNT, R-PUFM-X4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 1.49 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 283 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PUFM-X4 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 682 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | UNSPECIFIED |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 660 ns | 标称接通时间 (ton): | 130 ns |
Base Number Matches: | 1 |
APT200GN60JDQ4 数据手册
通过下载APT200GN60JDQ4数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Power Matters.
POWER PORTFOLIO 2012-2013
Power Semiconductors
Power Modules
RF Power MOSFETs
About Microsemi
Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions
for communications, defense & security, aerospace and industrial markets. Products include high-performance,
radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power
management products; timing and voice processing devices; RF solutions; discrete components; security
technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans;as well as custom design
capabilities and services.
Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more
at www.microsemi.com.
CONTENTS
HIGH VOLTAGE SMPS TRANSISTORS
Page No.
IGBTs (Insulated Gate Bipolar Transistors)......................................................................3-5
Power MOS 8TM MOSFETs / FREDFETs ............................................................................6-8
Ultra Low Gate Charge MOSFETs......................................................................................9
COOLMOSTM MOSFETs.....................................................................................................10
High Voltage Linear MOSFETs .........................................................................................10
DIODES
SiC Schottky and Ultra Fast Recovery Diodes ............................................................11-13
HIGH VOLTAGE RF MOSFETS........................................................................................ 14
DRIVER-RF MOSFET HYBRIDS...................................................................................... 14
HIGH FREQUENCY RF MOSFETS .................................................................................. 15
REFERENCE DESIGN KIT .............................................................................................. 15
POWER MODULES
Contents..........................................................................................................................16
Electrical Configuration...................................................................................................17
Packaging........................................................................................................................18
Know How and Capabilities .......................................................................................19-20
Part Numbering System...................................................................................................21
IGBTs (Insulated Gate Bipolar Transistors) ................................................................22-26
MOSFETs ....................................................................................................................27-31
Renewable Energy Power Modules ............................................................................31-32
SiC Power Modules.....................................................................................................33-35
Diodes and Rectifiers .................................................................................................36-38
PACKAGE OUTLINE DRAWINGS..............................................................................39-43
“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“COOLMOS” is a trademark of Infineon Technologies AG”
ASPM®, Power MOS V®, Power MOS 7® & T-MAX® are registered trademarks of Microsemi Corporation
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs from Microsemi
IGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching
frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The fre-
quency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing
the best possible performance/cost combination for the targeted application. There are six product series that utilize three different
IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.
IGBT Switching Frequency Ranges (kHz, hard switched)
10
20
30
40
50
60
70
80
90
100
110
120
Field Stop
Thunderbolt® NPT
600V
900V
Thunderbolt® High Speed (HS) NPT
Power MOS 8TM PT
Power MOS 8TM PT
Field Stop
Fast NPT
1200V
Power MOS 7TM PT
Thunderbolt® NPT
Power MOS 8TM NPT (NEW!)
Note: Frequency ranges shown are typical for a 50A IGBT. Refer to product data sheet max frequency vs current graph for more information.
Standard
Voltage
Technology Easy to Short Circuit Comment
Series
Ratings (V)
Parallel
SOA
Thunderbolt®
600, 1200
600
NPT
NPT
X
X
X
X
General purpose, high speed
Highest speed
Thundebolt®
High Speed
FAST
1200
NPT
X
X
General purpose, medium
speed
MOS 7™
MOS 8™
1200
PT
Ultra-low gate charge
Highest efficiency
600, 900, 1200
600, 1200
PT, NPT
Field Stop
Field Stop
X
X
Lowest conduction loss
Trench Gate
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode.
Package options include TO-220, TO-247, T-MAX®, TO-264, and SOT-227. Customized products are available; contact factory for details.
3
Insulated Gate Bipolar Transistors (IGBTs)
BVCES
Volts
VCE(ON)
IC2
Maximum IC
at Frequency
Package
Style
O
Typ 25 C
100oC
Part Number
50 kHz
80 kHz
POWER MOS 8TM
SINGLE
2.5
2.5
2.5
2.5
2.5
2.5
25
25
40
40
50
50
25
25
38
38
48
21
21
28
28
36
APT25GR120B
APT25GR120S
APT40GR120B
APT40GR120S
APT50GR120B2
APT50GR120L
TO-247
D3
TO-247
D3
New!
T-MAX®
TO-264
1200V
48
36
1200
25 kHz
50 kHz
s .04 4ECHNOLOGY
2.5
2.5
2.5
2.5
2.5
2.5
70
70
70
85
85
66
66
42
72
72
46
42
42
30
46
46
31
APT70GR120B2
APT70GR120L
APT70GR120J
APT85GR120B2
APT85GR120L
APT85GR120J
T-MAX®
TO-264
ISOTOP®
T-MAX®
TO-264
ISOTOP®
s (IGH 3PEED 3WITCHING
s ,OW 3WITCHING ,OSSES
s %ASY TO 0ARALLEL
TO-247[B]
D3 PAK[S]
85*
Combi (IGBT & Diode)
50 kHz
25
80 kHz
21
2.5
2.5
2.5
2.5
25
25
25
25
40
40
APT25GR120BD15
APT25GR120SD15
APT25GR120BSCD10
APT25GR120SSCD10
APT40GR120B2D30
APT40GR120B2SCD10
TO-247 (DQ)
D3 (DQ)
TO-247 (SiC SBD)
D3 (SiC SBD)
T-MAX® (DQ)
T-MAX® (SiC SBD)
25
25
25
38
21
21
21
28
Part Numbers for D3
packages - replace
B” with “S” in part
number
1200
2.5
2.5
38
28
25 kHz
50 kHz
2.5
2.5
2.5
50*
70*
85*
42
42
46
32
30
31
APT50GR120JD30
APT70GR120JD60
APT85GR120JD60
ISOTOP® (DQ)
ISOTOP® (DQ)
ISOTOP® (DQ)
50 kHz
80 kHz
SINGLE
600
POWER MOS 8TM
2.0
2.0
2.0
2.0
2.0
2.0
36
44
54
68
80
21
26
30
35
40
51
17
20
23
27
31
39
APT36GA60B
APT44GA60B
APT54GA60B
APT68GA60B
APT80GA60B
APT102GA60B2
TO-247
TO-247
TO-247
TO-247
s 04 4ECHNOLOGY
s &AST 3WITCHING
s (IGHEST %FlCIENCY
s #OMBI WITH (IGH
TO-247
102
T-MAX® or TO-264
T-MAX®[B2]
25 kHz
50 kHz
3PEED $1 $IODE
2.5
2.5
2.5
2.5
35
43
64
80
17
21
29
34
10
13
19
23
APT35GA90B
APT43GA90B
APT64GA90B
APT80GA90B
TO-247
TO-247
900
TO-247
TO-247 or D3
Combi (IGBT & “DQ” FRED)
50 kHz
21
80 kHz
17
2.0
2.0
2.0
2.0
2.0
2.0
36
44
54
60
68
80
APT36GA60BD15
APT44GA60BD30
APT54GA60BD30
APT60GA60JD60
APT68GA60B2D40
APT80GA60LD40
TO-247
TO-247
TO-247
26
30
48
35
20
23
36
27
600
TO-264[L]
ISOTOP®
T-MAX® or TO-264
TO-264
40
31
25 kHz
50 kHz
2.5
2.5
2.5
2.5
2.5
2.5
27
35
43
46
64
80
14
17
21
33
29
34
8
10
13
21
19
23
APT27GA90BD15
APT35GA90BD15
APT43GA90BD30
APT46GA90JD40
APT64GA90B2D30
APT80GA90LD40
TO-247
TO-247
TO-247
900
ISOTOP®
T-MAX® or TO-264
TO-264
264-MAXTM[L2]
SINGLE
15 kHz
30 kHz
FIELD STOP
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
24
37
64
15
20
30
42
75
54
79
10
14
21
30
47
39
57
75
APT20GN60BG
APT30GN60BG
APT50GN60BG
APT75GN60BG
APT150GN60J
APT100GN60B2G
APT150GN60B2G
APT200GN60B2G
APT200GN60J
TO-247
TO-247
TO-247
TO-247
ISOTOP®
T-MAX®
T-MAX®
T-MAX®
ISOTOP®
Part Numbers for
TO-264 packages -
replace "B2" with
"L" in part number
s 4RENCH 4ECHNOLOGY
s 3HORT #IRCUIT
2ATED
s ,OWEST
#ONDUCTION ,OSS
s %ASY 0ARALLELING
s #OMBI WITH (IGH
3PEED $1 $IODE
93
600
123
135
190
230
158
103
100
10 kHz
19
66
20 kHz
1.7
1.7
1.7
1.7
1.7
1.7
1.7
33
46
66
70
99
13
17
22
27
30
38
36
APT25GN120BG
APT35GN120BG
APT50GN120B2G
APT100GN120J
APT75GN120B2G
APT100GN120B2G
APT150GN120J
TO-247 or D3
TO-247
24
32
44
45
58
60
T-MAX®
1200
ISOTOP®
ISOTOP®[J]
SOT-227
T-MAX® or TO-264
T-MAX®
120
99
ISOTOP®
C
Current @ Frequency Test Conditions: Tj = 125oC, Tc = 100oC except Isotop® where Tc = 80oC, Vcc = 67% rated voltage Hard Switch
G
ꢀ )Cꢁ FOR )3/4/0® PACKAGES MEASURED AT ꢂꢃª# FOR ꢄꢁꢃꢃ6 .04 )'"4S
E
Datasheets available on www.microsemi.com
All Products RoHS Compliant
4
Insulated Gate Bipolar Transistors (IGBTs)
BVCES
Volts
VCE(ON)
IC2
Maximum IC
at Frequency
Package
Style
Typ 25oC
100oC
Part Number
15 kHz
30 kHz
Combi (IGBT & "DQ" FRED)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
24
37
15
20
30
42
75
54
79
100
10 kHz
14
19
24
36
32
44
60
20 kHz
19
10
14
21
30
47
39
57
66
APT20GN60BDQ1G
APT30GN60BDQ2G
APT50GN60BDQ2G
APT75GN60LDQ3G
APT150GN60JDQ4
APT100GN60LDQ4G
APT150GN60LDQ4G
APT200GN60JDQ4
TO-247
TO-247
TO-247
TO-264
ISOTOP®
TO-264
TO-264
ISOTOP®
64
93
123
135
190
158
TO-220[K]
D3 PAK[S]
600
20 kHz
1.7
1.7
1.7
1.7
1.7
1.7
1.7
22
33
46
57
66
70
99
10
13
17
22
22
27
36
APT15GN120BDQ1G
APT25GN120B2DQ2G
APT35GN120L2DQ2G
APT75GN120JDQ3
APT50GN120L2DQ2G
APT100GN120JDQ4
APT150GN120JDQ4
TO-247 or D3
T-MAX®
264-MAX™
1200
SINGLE
1200
ISOTOP®
264-MAX™
ISOTOP®
ISOTOP®
40 kHz
Power MOS 7®
and IGBT
3.3
3.3
3.3
3.3
3.3
3.3
33
46
54
34
91
57
12
15
18
18
24
23
APT25GP120BG
APT35GP120BG
APT45GP120BG
APT45GP120J
APT75GP120B2G
APT75GP120J
T0-247
T0-247
T0-247
ISOTOP
T-MAX™
ISOTOP
24
29
28
42
s 04 4ECHNOLOGY
s 5LTRAꢅLOW 'ATE
#HARGE
s #OMBI WITH (IGH
3PEED $1 $IODE
TO-247[B]
Part Numbers for D3
packages -
replace "B" with
"S" in part number
40
20 kHz
11
19
24
29
28
40
40 kHz
Combi (IGBT & "DQ" FRED)
3.3
3.3
3.3
3.3
3.3
3.3
20
33
46
54
34
57
7
12
15
18
18
23
APT13GP120BDQ1G
APT25GP120BDQ1G
APT35GP120B2DQ2G
APT45GP120B2DQ2G
APT45GP120JDQ2
T0-247
T0-247
T-MAX™
T-MAX™
ISOTOP
ISOTOP
1200
APT75GP120JDQ3
30 kHz
14
19
25
30
35
56
72
60 kHz
SINGLE
600
THUNDERBOLT®
2.0
2.0
2.0
2.0
2.0
2.0
2.0
20
30
40
50
60
10
13
16
20
22
35
--
APT20GT60BRG
APT30GT60BRG
APT40GT60BRG
APT50GT60BRG
APT60GT60BRG
APT100GT60B2RG
APT200GT60JR
TO-247
TO-247
TO-247
TO-247
s .04 4ECHNOLOGY
s 3HORT #IRCUIT
2ATED
s -ODERATE TO (IGH
&REQUENCY
TO-247 or D3
T-MAX® or TO-264
ISOTOP®
100
200
®
T-MAX [B2]
s %ASY 0ARALLELING
20 kHz
11
16
27
40
52
40 kHz
3.2
3.2
3.2
3.2
3.2
18
25
50
60
90
8
11
17
21
APT15GT120BRG
APT25GT120BRG
APT50GT120B2RG
APT100GT120JR
APT150GT120JR
TO-247
TO-247
1200
T-MAX® or TO-264
ISOTOP®
25
ISOTOP®
30 kHz
11
14
19
30
37
60 kHz
Combi (IGBT & "DQ" FRED)
2.0
2.0
2.0
2.0
2.0
15
20
8
10
13
20
APT15GT60BRDQ1G
APT20GT60BRDQ1G
APT30GT60BRDQ2G
APT50GT60BRDQ2G
APT100GT60JRDQ4
TO-247
TO-247
600
30
50
100
TO-247
TO-247 or D3
ISOTOP®
TO-264[L]
22
20 kHz
40 kHz
3.2
3.2
3.2
3.2
3.2
18
25
50
42
60
11
16
27
34
40
50 kHz
23
8
11
17
19
APT15GT120BRDQ1G
APT25GT120BRDQ2G
APT50GT120B2RDQ2G
APT75GT120JRDQ3
APT100GT120JRDQ4
TO-247
TO-247
Part Numbers for L
packages -
replace "B2" with
"L" in part number
1200
T-MAX® or TO-264
ISOTOP®
21
ISOTOP®
80 kHz
SINGLE
600
THUNDERBOLT®
HIGH SPEED
s (IGH 3PEED
3WITCHING ꢅ
2EDUCED %OFF
2.8
50
16
APT50GS60BRG
TO-247
50 kHz
14
23
15 kHz
8
11
16
27
27
80 kHz
9
16
30 kHz
Combi (IGBT & "DQ" FRED)
2.8
2.8
30
50
APT30GS60BRDQ2G
APT50GS60BRDQ2G
TO-247
TO-247
600
SINGLE
2.5
2.5
2.5
2.5
2.5
14
20
35
75
75
5
7
10
17
APT11GF120KRG
APT20GF120KRG
APT33GF120BRG
APT50GF120B2RG
APT50GF120LRG
TO-220
TO-220
TO-247
T-MAX®
TO-264
s &ASTEST 3WITCHING
s .04 4ECHNOLOGY
1200
ISOTOP®[J]
SOT-227
17
C
G
Current @ Frequency Test Conditions: Tj = 125oC, Tc = 100oC except Isotop® where Tc = 80oC, Vcc = 67% rated voltage Hard Switch
E
Datasheets available on www.microsemi.com All Products RoHS Compliant
5
Insulated Gate Bipolar Transistors (IGBTs)
BVCES
Volts
VCE(ON)
Typ 25 C
IC2
Maximum IC
at Frequency
Package
Style
100oC
Part Number
O
15 kHz
16
33
30 kHz
10
Combi (IGBT & "DQ" FRED)
FAST
2.5
2.5
2.5
35
64
80
APT33GF120B2RDQ2G
APT50GF120JRDQ3
APT60GF120JRDQ3
T-MAX®
ISOTOP®
ISOTOP®
1200
17
20
s .04 4ECHNOLOGY
42
s 3HORT #IRCUIT 2ATED
s ,OW TO -ODERATE &REQꢆ
s ,OW #ONDUCTION ,OSS
s %ASY 0ARALLELING
50 kHz
23
14
41
28
17
80 kHz
Combi (IGBT & "DL" FRED)
2.8
2.8
2.2
2.2
2.2
50
30
50
45
25
16
9
31
22
APT50GS60BRDLG
APT30GS60BRDLG
APT50GP60LDL
APT30GP60B2DL
APT15GP60BDL
TO-247
TO-247
TO-264
T-MAX® or TO-264
TO-247
600
14
20 kHz
40 kHz
1200
3.2
3.2
50
100
28
17
APT50GT120B2RDL
APT100GT120JRDL
T-MAX®
ISOTOP®
40
21
TM
Power MOS 8 MOSFETs / FREDFETs
(fast body diode)
TM
Power MOS 8™ is Microsemi's latest family of high speed, high voltage (500-1200V)
N-channel switch-mode power transistors with lower EMI characteristics and lower cost
compared to previous generation devices. These new MOSFETs / FREDFETs have been
optimized for both hard and soft switching in high frequency, high voltage applications rated
above 500W. There are 2 product types in the Power MOS 8™ MOSFET family:
1) MOSFET
2) FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt
ruggedness and high reliability in ZVS circuits.
Features
s &AST SWITCHING
s ,OW %-)
s 1UIET SWITCHING
s !VALANCHE ENERGY RATED
s ,OW GATE CHARGE
s ,OWER COST
Applications
s 0OWER FACTOR CORRECTION
s 3ERVER AND TELECOM POWER SYSTEMS
s 3OLAR INVERTERS
s 3EMICONDUCTOR CAPITAL EQUIPMENT
s )NDUCTION HEATING
s !RC WELDING
s 0LASMA CUTTING
s "ATTERY CHARGERS
s -EDICAL
Quiet Switching
The new Power MOS 8™ series is a result of extensive research into quiet switching. Input and reverse transfer capaci-
tance values as well as their ratio were set at specific values to achieve quiet switching with minimal switching loss. The
Power MOS 8™ series of devices are inherently quiet switching, stable when connected in parallel, very efficient, and
lower cost than previous generations.
Body Diode Options
As with previous generation products, Power MOS 8™ MOSFETs and FREDFETs are available in all voltage ratings. A
FREDFET is a MOSFET with a faster recovery intrinsic body diode. This results in improved reliability in ZVS circuits due
to shorter minority carrier lifetime and increased commutation dv/dt ruggedness. If a fast recovery body diode is not
needed, MOSFET versions are available.
6
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS)
Volts
RDS(ON)
Max
ID
MOSFET
Part #
ID
FREDFET
Part #
Package
Style
3.80
4.20
2.40
2.10
1.20
1.10
0.70
0.63
0.58
0.58
5
APT4M120K
TO-220
4
7
APT4F120K
APT7F120B
TO-220
TO-247 or D3
TO-220[K]
8
APT7M120B
TO-247
14
23
APT13F120B
APT22F120B2
TO-247 or D3
TO-247
14
24
APT14M120B
APT24M120B2
1200
T-MAX® or TO-264
T-MAX® or TO-264
T-MAX® or TO-264
ISOTOP®
27
18
APT26F120B2
APT17F120J
TO-247[B]
0.53
0.53
0.32
0.29
2.80
2.50
2.00
1.80
1.60
1.40
0.98
0.88
0.78
0.70
0.44
0.44
0.38
0.38
0.33
0.33
0.20
0.18
1.50
1.35
0.90
0.80
0.58
0.53
0.43
0.39
0.24
0.21
0.21
0.19
0.19
0.11
0.10
29
19
APT28M120B2
APT19M120J
T-MAX® or TO-264
ISOTOP®
33
5
APT32F120J
APT5F100K
APT7F100B
APT9F100B
APT14F100B
APT17F100B
ISOTOP®
35
6
APT34M120J
APT6M100K
APT8M100B
APT9M100B
APT14M100B
APT18M100B
ISOTOP®
TO-220
D3 PAK[S]
TO-220
Part Numbers for D3
packages - replace "B”
with “S” in part number
7
TO-247
8
TO-247
9
TO-247 or D3
9
TO-247
14
17
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247
14
18
1000
30
20
35
23
APT29F100B2
APT19F100J
APT34F100B2
APT22F100J
T-MAX® or TO-264
ISOTOP®
T-MAX®[B2]
32
21
37
25
APT31M100B2
APT21M100J
APT37M100B2
APT25M100J
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
42
7
APT41F100J
APT7F80K
ISOTOP®
45
8
APT45M100J
APT8M80K
ISOTOP®
TO-220
TO-220
TO-264[L]
12
18
23
APT11F80B
APT17F80B
APT22F80B
TO-247 or D3
13
19
25
43
APT12M80B
APT18M80B
APT24M80B
APT41M80B2
TO-247
Part Numbers for TO-264
packages - replace "B2"
with "L" in part number
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
T-MAX® or TO-264
T-MAX® or TO-264
ISOTOP®
800
41
47
31
APT38F80B2
APT44F80B2
APT29F80J
49
33
APT48M80B2
APT32M80J
T-MAX® or TO-264
ISOTOP®
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
57
APT53F80J
ISOTOP®
60
APT58M80J
ISOTOP®
Datasheets available on www.microsemi.com
All Products RoHS Compliant
7
Power MOS 8TM MOSFETs / FREDFETs
BV(DSS)
Volts
RDS(ON)
Max
ID
MOSFET
Part #
ID
FREDFET
Part #
Package
0.62
0.43
0.37
0.29
0.22
0.19
0.15
0.15
0.11
0.11
0.09
0.09
0.055
0.39
0.30
0.24
0.19
0.15
0.13
0.10
0.10
0.075
0.075
0.062
0.062
0.036
12
APT12F60K
TO-220
16
19
24
30
36
45
31
60
42
70
49
84
15
20
24
30
37
43
56
38
75
51
84
58
103
APT15F60B
APT18F60B
APT23F60B
APT28F60B
APT34F60B
APT43F60B2
APT30F60J
APT56F60B2
APT39F60J
APT66F60B2
APT47F60J
APT80F60J
APT15F50K
APT20F50B
APT24F50B
APT30F50B
APT37F50B
APT42F50B
APT56F50B2
APT38F50J
APT75F50B2
APT51F50J
APT84F50B2
APT58F50J
APT100F50J
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247
TO-220[K] or TO-220[KF]*
36
45
31
60
42
70
49
84
APT34M60B
600
APT43M60B2
APT30M60J
APT56M60B2
APT39M60J
APT66M60B2
APT47M60J
APT80M60J
T-MAX® or TO-264
ISOTOP®
T-MAX® or TO-264
ISOTOP®
TO-247[B]
D3 PAK[S]
T-MAX® or TO-264
ISOTOP®
ISOTOP®
TO-220[K] or TO-220[KF]*
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-247 or D3
T-MAX® or TO-264
ISOTOP®
Part Numbers for D3 packages
- replace "B" with "S" in part
number
500
56
38
APT56M50B2
APT38M50J
APT75M50B2
APT51M50J
APT84M50B2
APT58M50J
APT100M50J
75
T-MAX® or TO-264
ISOTOP®
51
84
T-MAX® or TO-264
ISOTOP®
58
T-MAX®[B2]
103
ISOTOP®
* Available on APT15F50K
®
Low Voltage Power MOS V MOSFETs / FREDFETs
0.085
0.070
0.040
0.019
0.045
0.038
0.022
0.011
40
48
APT30M85BVRG
APT30M70BVRG
APT30M40JVRG
APT30M19JVR
40
48
APT30M85BVFRG
APT30M70BVFRG
APT30M40JVFRG
APT30M19JVFR
TO-247
TO-247 or D3
300
70
70
ISOTOP®
TO-264[L]
130
56
130
56
ISOTOP®
Part Numbers for TO-264
packages - replace "B2" with
"L" in part number
APT20M45BVRG
APT20M38BVRG
APT20M22B2VRG
APT20M11JVR
APT20M45BVFRG
APT20M38BVFRG
APT20M22B2VFRG
APT20M11JVFR
TO-247
67
37
TO-247 or D3 or T/R
T-MAX® or TO-264
ISOTOP®
200
100
175
100
175
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
Datasheets available on www.microsemi.com
All Products RoHS Compliant
8
Ultrafast, Low Gate Charge MOSFETs
FOR 250 kHz - 2 MHz SWITCHING APPLICATIONS
These devices are ideally suited for high frequency
and pulsed high voltage applications.
The Ultrafast, Low Gate Charge MOSFET family combines the
lowest gate charge available in the industry with Microsemi’s
proprietary self-aligned aluminum metal gate structure. The re-
sult is a MOSFET capable of extremely fast switching speeds
and very low switching losses. The metal gate structure and the
layout of these chips provide an internal series gate resistance
(EGR) an order of magnitude lower than competitive devices
built with a polysilicon gate.
Typical Applications:
s #LASS $ AMPLIlERS UP TO ꢀ -(Z
s (IGH VOLTAGE PULSED $#
s !- TRANSMITTERS
s 0LASMA DEPOSITIONꢁETCH
FEATURES:
BENEFITS:
z
Series Gate Resistance (Rg) <0.1 ohm
z Tr and Tf times of <10ns
Industry's Lowest Gate Charge
zꢀFast switching, uniform signal propagation
zꢀPulse power applications
z
zꢀFast switching, reduced gate drive power
BV(DSS)
Volts
RDS(ON)
Max
ID
MOSFET Part #
FREDFET Part #
Package
Style
4.700
4.700
1.400
0.670
0.670
0.570
0.570
0.900
0.780
0.450
0.450
0.350
0.350
0.260
0.260
0.210
0.140
0.110
0.200
0.200
0.140
0.100
0.065
0.065
0.075
0.075
0.050
0.038
3.5
3.5
9
APT1204R7KFLLG
APT1204R7BFLLG
APT1201R4BFLLG
T0-220
T0-247 or D3
T0-247
1200
18
17
22
19
12
14
23
21
28
25
38
30
37
52
51
38
33
35
46
67
58
51
57
71
88
APT12067B2LLG
APT12067JLL
T-MAX®
ISOTOP®
T-MAX®[B2]
APT12057B2LLG
APT12057JLL
T-MAX®
ISOTOP®
APT10090BLLG
APT10078BLLG
APT10045B2LLG
APT10045JLL
T0-247
T0-247 or D3
T-MAX® or TO-264
ISOTOP®
APT10035B2LLG
APT10035JLL
T-MAX®
TO-247[B]
1000
ISOTOP®
APT10026L2FLLG
APT10026JFLL
APT10021JFLL
APT8014L2FLLG
APT8011JFLL
TO-264 MAX
ISOTOP®
APT10026JLL
APT10021JLL
APT8014L2LLLG
APT8011JLL
ISOTOP®
TO-264 MAX
T-MAX™ or T0-264
T-MAX®
APT8020B2LL
APT8020JLL
800
500
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
ISOTOP® or D3 or T/R
APT5014BLLG
APT5010B2LLG
APT50M65B2LLG
APT50M65JLLG
APT50M75JLL
APT50M75B2LLG
APT50M50JLL
APT50M38JLL
TO-247
APT5010B2FLLG
APT50M65B2FLLG
APT50M65JFLLG
APT50M75JFLL
T-MAX® or TO-264
T-MAX® or TO-264
ISOTOP®
ISOTOP®
T-MAX® or TO-264
ISOTOP®
ISOTOP®
Datasheets available on www.microsemi.com
All Products RoHS Compliant
9
TM
COOLMOS MOSFETs
BVDSS
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
Package
Style
Part Number
C3 TECHNOLOGY
900
800
0.120
0.450
0.450
0.145
0.145
0.035
0.070
0.070
0.035
0.042
36
11
11
34
34
94
47
47
77
APT36N90BC3G
APT11N80KC3G
APT11N80BC3G
APT34N80B2C3G
APT34N80LC3G
APT94N65B2C3G
APT47N65BC3G
APT47N60BC3G
APT77N60JC3
TO-247
D3 PAK[S]
TO-268
TO-220
TO-220[K]
TO-247
T-MAX® or TO-264
TO-264
T-MAX® or TO-264
TO-247 or D3
TO-247 or D3
ISOTOP®
650
600
TO-247[B]
T-MAX®[B2]
94
APT94N60L2C3G
264-MAX™
SERVER SERIES
0.045
60
APT60N60BCSG
TO-247 or D3 or T/R
C6 TECHNOLOGY
NEW!
0.041
0.070
0.099
0.125
0.125
0.035
0.041
0.035
77
53
38
30
30
106
85
94
APT77N60BC6
APT53N60BC6
APT38N60BC6
APT30N60KC6
APT30N60BC6
APT106N60B2C6
APT97N65B2C6
APT94N65B2C6
TO-247 or D3
TO-247 or D3
TO-247 or D3
TO-220
TO-247 or D3
T-MAX™ or T0-264
T-MAX™ or T0-264
T-MAX™
TO-264[L]
264-MAX™ [L2]
600
650
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
“COOLMOS” comprise a new family of transistors developed by Infineon Technologies AG.
“COOLMOS” is a trademark of Infineon Technologies AG”
Linear MOSFETs
What is a Linear MOSFET?
A MOSFET specifically designed to be more robust than a standard MOSFET when
operated with both high voltage and high current near DC conditions (>100msecs).
Designers will need Linear MOSFETs when…
s
s
s
s
(IGH #URRENT ꢂ ꢃ ꢀꢄꢄ6 ꢃꢅꢄꢄMSEC
5SED AS A VARIABLE POWER RESISTOR
3OFT START APPLICATION ꢆLIMIT SURGE CURRENTSꢇ
,INEAR AMPLIlER CIRCUIT
The Problem with SMPS MOSFETs
MOSFETs optimized for high frequency SMPS applications have poor high voltage DC
SOA. Most SMPS type MOSFETs over-state SOA capability at high voltage on the data sheets.
Above ~30V and DC conditions, SOA drops faster than is indicated by PD limited operation.
For pulsed loads (t<10ms) there is generally no problem using a standard MOSFET.
Typical Applications…
s
!CTIVE LOADS ABOVE ꢀꢄꢄ VOLTS SUCH AS $# DYNAMIC
loads for testing power supplies, batteries, fuel cells, etc.
Technology Innovation
s
(IGH VOLTAGEꢈ HIGH CURRENT CONSTANT CURRENT SOURCESꢉ
Introduced in 1999, Microsemi modified its proprietary patented self-aligned metal gate
MOSFET technology for enhanced performance in high voltage, linear applications. These Linear
MOSFETs typically provide 1.5-2.0 times the DC SOA capability at high voltage compared to
other MOSFET technologies optimized for switching applications.
BVDSS
Volts
RDS(ON)
Ohms
ID(Cont)
Amps
SOA
Watts
Part Number
APL1001J
Package Style
1000
600
0.600
18
325
0.125
0.125
49
43
325
325
APL602B2G
APL602J
500
0.090
0.090
58
52
325
325
APL502B2G
APL502J
ISOTOP®[J]
SOT-227
(ISOLATED BASE)
T-MAX®[B2]
TO-264[L]
Part Numbers for TO-264 packages - replace ”B2” with “L” in part number
Datasheets available on www.microsemi.com
All Products RoHS Compliant
10
Ultra Fast Recovery Diodes
Microsemi PPG offers five series of discrete diode products: a new DL series low VF ultra-soft recovery, the medium speed medium VF
D series, the high speed DQ series, the very high speed DS series, and the silicon Schottky S series. These series of diodes are designed
to provide high quality solutions to a wide range of high voltage, high power application requirements, ranging from fast recovery for
continuous conduction mode power factor correction to low conduction loss for output rectification. Distinguishing features, technology
used, and applications for each product family are summarized in the table below.
Series
DL
Voltage
Ratings
Features
Applications
Comment
Low VF
Ultra-soft recovery
Avalanche Rated
Output rectifier
Resonant circuits
Ultra-soft recovery minimizes or
eliminates snubber
600
Freewheeling Diode
Output rectifier
DC-DC converter
200, 300, 400,
600, 1000, 1200
Medium VF
Medium Speed
Proprietary platinum process
D
PFC
High speed
Avalanche Rated
600, 1000, 1200
Freewheeling Diode
DC-DC converter
Stepped epi improves softness
Proprietary platinum process
DQ
DS
600
200
Very high speed
High frequency PFC
Proprietary platinum process
Output rectifier
Freewheeling Diode
DC-DC converter
Low VF
Avalanche rated
Schottky
The graph below shows the relative recovery speed and forward voltage positions of 600V DL, D, DQ and DS series diodes.
11
SIC SCHOTTKY Diodes
SIC SCHOTTKY DIODES
IF (avg)
VFvolts
Typ 25° C
Diode
Series
Part
Number
Package
Style
Volts
Amps
SINGLE
10
10
20
20
30
30
1.5
1.5
1.5
1.5
1.5
1.5
SCD
SCD
SCD
SCD
SCD
SCD
APT10SCD120B
APT10SCD120K
APT20SCD120B
APT20SCD120S
APT30SCD120B
APT30SCD120S
TO-247
TO-220
TO-247
D3
TO-247
D3
New!
1200
DUAL
1200
10
1.5
SCD
APT10SCD120BCT
TO-247
Ultra Fast Recovery Diodes
QRR (nC)
IF (avg)
VF (volts)
Typ 25OC
tRR(ns)
Diode
Series
Package
Style
Typ 125OC
Volts
Amps
Typ 25OC
Part Number
at I = I (avg)
F
F
15
15
15
15
30
30
30
40
60
60
75
15
15
15
30
30
30
40
60
60
75
15
15
15
15
30
30
30
40
60
60
75
100
30
60
30
30
60
60
100
2.8
2.8
2.0
2.0
2.8
2.8
2.0
2.8
2.8
2.0
2.8
2.5
2.5
1.9
2.5
2.5
1.9
2.5
2.5
1.9
2.5
2.0
2.0
1.6
1.6
2.0
2.0
1.6
2.0
2.0
1.6
2.0
1.25
1.3
1.3
1.1
0.83
1.1
0.83
0.89
21
21
32
32
24
24
31
26
30
38
32
20
20
28
22
22
29
24
29
34
33
16
16
21
21
19
19
23
22
26
40
29
45
22
30
21
25
30
35
40
960
960
DQ
DQ
D
APT15DQ120BG
APT15DQ120KG
APT15D120BG
APT15D120KG
APT30DQ120BG
APT30DQ120KG
APT30D120BG
APT40DQ120BG
APT60DQ120BG
APT60D120BG
APT75DQ120BG
APT15DQ100BG
APT15DQ100KG
APT15D100KG
APT30DQ100BG
APT30DQ100KG
APT30D100BG
APT40DQ100BG
APT60DQ100BG
APT60D100BG
APT75DQ100BG
APT15DQ60BG
APT15DQ60KG
APT15D60BG
TO-247
TO-220
TO-247
TO-220
TO-247
TO-220
TO-247
TO-247
TO-247
TO-247 or D3
TO-247
TO-247
TO-220
TO-220
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247 or D3
TO-247
TO-247
TO-220
TO-247
TO-220
TO-247
TO-220
TO-247
TO-247
TO-247
TO-247 or D3
TO-247
TO-247
TO-247
SINGLE
1300
1300
1800
1800
3450
2200
2800
4000
3340
810
D
DQ
DQ
D
DQ
DQ
D
DQ
DQ
DQ
D
DQ
DQ
D
DQ
DQ
D
DQ
DQ
DQ
D
TO-220[K]
1200
810
D3 PAK[S]
TO-268
1550
1250
1250
2350
1430
2325
3600
2660
250
250
520
520
400
400
700
480
640
920
650
3800
360
540
1000
D
APT15D60KG
TO-247[B]
DQ
DQ
D
DQ
DQ
D
DQ
DL
D
APT30DQ60BG
APT30DQ60KG
APT30D60BG
APT40DQ60BG
APT60DQ60BG
APT60D60BG
APT75DQ60BG
APT100DL60BG
APT30D40BG
APT60D40BG
APT30D20BG
APT30S20BG
APT60D20BG
600
400
200
D
D
TO-247
TO-247
TO-247 or D3
TO-247
150
448
250
490
Schottky
D
Schottky
Schottky
T-MAX®[B2]
APT60S20BG
APT100S20BG
TO-247 or D3 or T/R
TO-247
690
Part Numbers for D3
ages - replace ”B” with “S” in
part number
pack-
TANDEM, DS DIODES FOR PFC BOOST APPLICATIONS
600
15
30
3.2
3.2
13
17
85
180
DS
DS
APT15DS60BG
APT30DS60BG
TO-247
TO-247
(2, 300V Diodes Connected In Series)
Datasheets available on www.microsemi.com
All Products RoHS Compliant
12
Ultra Fast Recovery Diodes
QRR (nC)
IF (avg)
Amps
VF (volts)
tRR(ns)
Diode
Series
Package
Style
Typ 125OC
Volts
Typ 25OC
Typ 25OC
Part Number
at I = I (avg)
F
F
2x27
2x30
2x53
2x60
2x93
2x100
2.0
2.6
2.0
2.5
2.0
2.4
31
25
38
30
47
45
3450
1800
4000
2890
5350
5240
D
DQ
D
DQ
D
APT2X30D120J
APT2X30DQ120J
APT2X60D120J
APT2X60DQ120J
APT2X100D120J
APT2X100DQ120J
DUAL
1200
1000
DQ
2x28
2x55
2x60
2x95
2x100
1.9
1.9
2.2
1.9
2.1
29
34
30
43
45
2350
3600
2350
4050
3645
D
D
DQ
D
APT2X30D100J
APT2X60D100J
APT2X60DQ100J
APT2X100D100J
APT2X100DQ100J
ISOTOP®[J] SOT-227
Antiparallel
DQ
Configuration
(ISOLATED BASE)
2x30
2x30
2x60
1.8
1.6
1.7
1.6
1.6
20
23
27
40
30
34
53
400
700
650
920
980
DQ
D
DQ
D
DQ
D
DL
APT2X30DQ60J
APT2X30D60J
APT2X60DQ60J
APT2X60D60J
APT2X100DQ60J
APT2X100D60J
APT2X150DL60J
ISOTOP®
600
2x60
2x100
2x100
2x150
1.6
1.25
1450
3800
2x30
2x60
2x100
2x100
1.3
1.3
1.3
1.0
22
30
37
40
360
540
1050
3550
D
D
D
APT2X30D40J
APT2X60D40J
APT2X100D40J
APT2X101DL40J
APT2X101D30J
400
Part Numbers for Parallel
Configuration replace 30, 60,
or 100 with 31, 61, or 101.
Except Schottky
++
DL
300
200
2x100
1.2
36
650
D
2x30
2x60
2x100
2x100
0.80
0.83
1.1
25
35
39
40
448
490
840
690
Schottky
Schottky
D
APT2X31S20J
APT2X61S20J
APT2X100D20J
APT2X101S20J
Example: 2X30D120J
becomes 2X31D120J
0.89
Schottky
1200
1000
2x30
2.8
26
2100
DQ
APT30DQ120BCTG
TO-247 [BCT]
2x15
2x15
2x30
2x30
2x60
2x60
2x15
2x15
2x15
2x30
2x30
2x30
2x30
2x30
2x40
2x60
2x60
2x30
2x60
2x30
2x30
2x30
2x30
2x60
2x100
2.5
1.9
1.9
1.9
2.5
1.9
1.6
2.0
1.6
2.0
2.0
1.6
1.6
1.6
2.0
2.0
1.6
1.3
1.3
1.2
1.1
1.1
0.80
0.83
0.89
20
28
29
30
29
35
21
15
20
22
19
23
25
25
22
26
30
22
30
25
21
21
25
35
40
810
1550
2360
2350
2325
3600
520
250
520
480
400
700
700
700
480
640
920
360
540
1300
150
150
448
490
690
DQ
D
D
D
DQ
D
D
DQ
D
DQ
DQ
D
D
D
DQ
DQ
APT15DQ100BCTG
APT15D100BCTG
APT30D100BCTG
APT30D100BHBG
APT60DQ100LCTG
APT60D100LCTG
APT15D60BCTG
APT15DQ60BCTG
APT15D60BCAG
APT30DQ60BHBG
APT30DQ60BCTG
APT30D60BCTG
APT30D60BHBG
APT30D60BCAG
APT40DQ60BCTG
APT60DQ60BCTG
APT60D60LCTG
APT30D40BCTG
APT60D40LCTG
APT30D30BCTG
APT30D20BCTG
APT30D20BCAG
APT30S20BCTG
APT60S20B2CTG
APT100S20LCTG
TO-247 [BCT]
TO-247 [BHB]
TO-247 [BHB]
TO-247 [BCA]
TO-264 [LCT]
TO-264 [LCT]
T0-247
TO-220[KCT]
*Common Cathode
TO-247[BCA]
*Common Anode
TO-247 [BCT]
TO-247 [BCA]
TO-247 [BHB]
TO-247 [BCT]
TO-247 [BCT]
TO-247 [BHB]
TO-247 [BCA]
TO-247 [BCT]
TO-247 [BCT]
TO-264 [LCT]
TO-247 [BCT]
TO-264 [LCT]
TO-247 [BCT]
TO-247 [KCT]
TO-247 [BCA]
TO-247 [BCT]
T-MAX® [B2CT]
TO-264[LCT]
TO-247[BCT]
*Common Cathode
600
TO-247[BHB]
*Half Bridge
D
D
D
D
D
400
300
4
ꢀ-AX
T-MAX® [B2CT]
*Common Cathode
D
Schottky
Schottky
Schottky
200
TO-264[LCT]
*Common Cathode
Datasheets available on www.microsemi.com
All Products RoHS Compliant
*Current ratings per leg ++ Parallel Form Only
13
High Voltage RF MOSFETs
The ARF family of RF Power MOSFETs are optimized for applications requiring frequencies as high as 150MHz and operating voltages as
high as 400V. Historically, RF Power MOSFETs were limited to applications of 50V or less. This limitation has been removed by combining
Microsemi's high voltage MOSFET technology with RF specific die geometries.
Why Higher Voltage? Higher VDD means higher load impedance. For 150W output from a 50V supply the load impedance is only 8 ohms.
At 125V, the load impedance is 50 ohms. The higher impedance allows simpler transformers and combiners. Paralleled devices can still
operate into reasonable and convenient impedances. The increased operating voltage also lowers the DC current required for any given
power output increasing efficiency and reducing the size, weight and cost of other system components.
Pout
(W)
Freq.
(MHz)
VDD/BVDSS
(V)
eJC
Package
Style
Part
Number
Class of
Operation
(OC/W)
90
120
100
100
65
65
65
65
65
60
150
150
150
150
45
45
65
25
40
40
40
150V/450V
125V/500V
125V/500V
250V/900V
250V/900V
150V/450V
125V/500V
250V/1kV
300V/1.2kV
165V/500V
165V/500V
165V/500V
165V/500V
200V/1kV
0.76
0.70
0.70
0.55
0.55
0.55
0.50
0.50
0.50
0.60
0.35
0.31
0.31
0.35
0.13
0.18
0.13
0.12
0.12
0.12
0.12
0.12
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
TO-247
M174
M208
T3A
T3C
TO-264
T3
T3C
T2
ARF449AG/BG
ARF463AG/BG
ARF463AP1G/BP1G
ARF446G
C-E
A-E
A-E
C-E
C-E
C-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
A-E
D
M113 / M174 / M177
M208
100
140
ARF447G
ARF448AG/BG
ARF460AG/BG
ARF461AG/BG
ARF465AG/BG
ARF521
ARF473
ARF475FL
ARF476FL
ARF466AG/BG
ARF466FL
ARF477FL
ARF1519
TO-247
TO-264
150
150
300
T1
ꢀ
ꢀ
ꢁ
ꢃ
ꢂ
$RAIN
3OURCE
3OURCE
'ATE
ꢁ
ꢃ
ꢂ
300
200V/1kV
400
750
165V/500V
250V/1000V
125V/500V
250V/1kV
300V/1.2kV
400V/1000V
380V/500V
T2
T2 Backside
T2B
T1
T1
T1
T1
ARF1500
ARF1501
ARF1505
ARF1510
750
750
40
40
T1
ARF1511
D
T3
T3B
T3A
T3C
T4
T11
Drivers and Driver-RF MOSFET Hybrids
The DRF1200/01/02/03 Hybrids integrates Driver, bypass capacitors and RF MOSFETS into a single package. Integration
maximizes amplifier performance by minimizing transmission line parasitics between the Driver and MOSFET. The DRF1300 or DRF1301
has two independent channels, each containing a Driver and RF MOSFET in a push pull configuration. The DRF1400A and B are half
bridge hybrids with symmetrically orientated leads so that the two can easily be configured into a full bridge converter. All DRF parts
feature a proprietary Anti-ring function to eliminate cross conduction in a Bridge or push-pull topologies. All DRF parts can be externally
selected in either an inverting or non-inverting configuration.
PD
(W)
Freq.
(MHz)
VDD/BVDSS
(V)
eJC
Package
Style
Part
Number
Class of
Operation
Description
(OC/W)
600
1060
1060
600
1000
1000
1500
30
30
30
30
30
30
30
15V/1000V
15V/1000V
15V/500V
15V/1000V
15V/500V
15V/1000
15V/500
1.00
.025
.025
0.09
0.06
0.06
0.06
T2B
T2B
T2B
T2B
T4
DRF1200
DRF1201
DRF1202
DRF1203
DRF1300
DRF1301
DRF1400
D-E
D-E
D-E
D-E
D-E
D-E
D-E
Driver and High Voltage RF MOSFET
Driver and High Voltage/High Power RF MOSFET
Driver and High Power RF MOSFET
Driver and High Voltage RF MOSFET
2 Drivers/RF MOSFETs in Push-Pull Configuration
2 Drivers/RF MOSFETs in Push-Pull Configuration
2 Drivers/RF MOSFETs in a H Bridge Configuration
T4
T4
Datasheets available on www.microsemi.com
All Products RoHS Compliant
14
High Frequency RF MOSFETs
The VRF family of RF MOSFETs are improved replacements for industry standard RF transistors. They provide improved ruggedness by
increasing the BVDSS over 30% from the industry standard of 125 volts to 170V minimum. Low cost flangeless packages are another im-
provement that show Microsemi's dedication to optimizing performance, reducing cost and improving reliability. We will continue to offer
a greater number of product offerings in the new reduced-cost flangeless packages.
Pout
Min
(W)
Freq.
Gain
Typ
(dB)
d
Typ
(%)
VDD/BVDSS
(V)
Coss
Typ
(pF)
VSWR
Load
eJC
Case
Style
Part
Number
(OC/W)
(MHz)
150
30
175
175
150
175
175
175
175
30
13
16
11
14
14
16
14
17
21
21
45
50
50
50
55
55
50
45
45
50
28V/80V
50V/170V
50V/170V
50V/170V
28/80
50V/170V
50V/130V
50V/170V
50V/170V
50V/170V
375
40
30:1
30:1
30:1
30:1
5:1
5:1
30:1
-
0.60
1.52
0.60
0.60
0.35
0.35
0.60
0.13
0.13
0.27
M174
M113
M174
M174
M208
M208
M174
T2
VRF141
VRF148A
VRF150
150
150
300
300
150
600
600
300
210
200
375
200
215
775
810
400
VRF151
VRF141G
VRF151G
VRF152
VRF154FL
VRF157FL
VRF2933
30
30
-
T2
M177
3:1
Reference Design Kits
DRF1200/CLASS-E, 13.56 MHz
DRF1200/CLASS-E, 27.12 MHz
The DRF1200/CLASS-E Single Ended RF Generator is a
reference design providing the designer the ability to
evaluate an 85% efficient 1000W CLASS-E RF Generator
DRF1300/CLASS-D, 13.56 MHz
The DRF1300/CLASS-D Push Pull RF Generator is a
reference design providing the designer the ability to
evaluate an 80% efficient 2000W CLASS-D RF Generator
DRF1400/CLASS-D, 13.56 MHz
The DRF1400/CLASS-D Half Bridge RF Generator is a
reference design providing the designer the ability to
evaluate an 85% efficient 2500W CLASS- D RF Generator
All kits include: A fully populated board attached to an aluminum heat sink. An extensive application note explaining the theory of op-
eration with desginers recommendations for evaluation and board layout. All key waveforms are illustrated and described. A complete
parts list with recommended vendor part numbers and the board's Gerber file are provided for an easy transition into an end application.
Datasheets available on www.microsemi.com
All Products RoHS Compliant EXCLUDING Reference Design Kits
15
Power Modules Contents
IGBT Power Modules
POWER MODULE INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17-21
BOOST and BUCK CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-23
PHASE LEG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22-23
3 PHASE BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
PHASE LEG for welding application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
TRIPLE PHASE LEG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
TRIPLE DUAL COMMON SOURCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
INTERLEAVED PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
FULL & ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SINGLE SWITCH + SERIES DIODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Intelligent Power Modules
PHASE LEG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
MOSFET Power Modules
BOOST and BUCK CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
FULL BRIDGE + SERIES AND PARALLEL DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
ASYMMETRICAL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
PHASE LEG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PHASE LEG + SERIES AND PARALLEL DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PHASE LEG + SERIES DIODES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
TRIPLE PHASE LEG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
TRIPLE DUAL COMMON SOURCE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
DUAL COMMON SOURCE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SINGLE SWITCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SINGLE SWITCH + SERIES DIODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SINGLE SWITCH + SERIES AND PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . . . . . 30
INTERLEAVED PFC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SINGLE AND DUAL LINEAR MOSFET. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Microsemi combines a formidable array of technologies in semiconductors, packag-
ing and automated manufacturing to produce a wide range of high quality modules
optimized for:
s 2ELIABILITY
s %FlCIENCY AND ELECTRICAL PERFORMANCE
s ,OW COST
s 3PACE SAVINGS
s 2EDUCED ASSEMBLY TIME
RENEWABLE ENERGY Power Modules
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
PFC + BYPASS DIODE + PHASE LEG. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
PFC + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
PFC + BYPASS DIODE + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
SECONDARY FAST RECTIFIER + FULL BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
BOOST BUCK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3- LEVEL NPC INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
The readily available standard module product line spans a wide selection of circuit
toplogies, semiconductors including Silicon Carbide, voltage and current ratings
and packages. If you need even more flexibility or intellectual property protection,
Microsemi can often customize a standard module with low set up cost and with
a short lead time. Unique requirements can be met with Application Specific Power
Modules (ASPM®).
SiC Diode Power Modules
DUAL DIODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Microsemi serves a broad spectrum of inductrial applications for Welding, Solar,
Induction Heating, Medical, UPS, Motor Control and SMPS markets as well as
HI-REL applications for Semicap, Defense and Aerospace markets. A wide selection
of construction materials enables Microsemi to manufacture with short lead times
modules that feature:
IGBT + SiC Diode Power Modules
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
MOSFET + SiC Diode Power Modules
s %XTENDED TEMPERATURE RANGEꢊ ꢋꢌꢄª# TO ꢍꢀꢄꢄª#
s (IGH RELIABILITY
s 2EDUCED SIZE AND WEIGHT
SINGLE SWITCH + SERIES FRED AND SiC PARALLEL DIODES . . . . . . . . . . . . . . . . . 34
CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
DUAL CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
PHASE LEG + SERIES FRED AND SiC PARALLEL DIODES. . . . . . . . . . . . . . . . . . . . . 34
FULL BRIDGE + SERIES FRED AND SiC PARALLEL DIODES . . . . . . . . . . . . . . . . . . . 34
TRIPLE PHASE LEG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
s (Iꢋ2EL TESTING AND SCREENING OPTIONS
Microsemi's experience and expertise in power electronic conversion brings the
most effective technical support for your new development.
SiC MOSFET Power Modules
s )SOLATED GATE DRIVER
s 3NUBBERS
s -IX ꢂ MATCH SEMICONDUCTORS
s 3HORT CIRCUIT PROTECTION
s 4EMPERATURE ꢂ CURRENT SENSING
s 0ARAMETER BINNING
PHASE LEG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
T-TYPE 3-LEVEL INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3-LEVEL NPC INVERTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
BOOST CHOPPER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Diode Power Modules
SINGLE DIODE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
SINGLE DIODE - NON ISOLATED PACKAGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3-PHASE BRIDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3-PHASE BRIDGE + THYRISTOR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
FULL BRIDGE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
THYRISTOR & DIODE DOUBLER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
COMMON CATHODE - COMMON ANODE - DOUBLER . . . . . . . . . . . . . . . . . . . . . . 38
Package Outlines Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40-43
16
Standard Electrical Configurations
Microsemi PMP offers a wide range of standard electrical configurations housed in various packages and capable to respond to many power conversion demands
asking for high power density and performance. Same topology can be offered with different semiconductors type.
IGBT
MOSFET
Diode
Mix Si-SiC
Full SiC
Electrical Topology
Asymmetrical Bridge
600V to 1700V
75V to 1200V
30V to 1700V
600 & 1200V
600 & 1200V
X
X
X
X
X
X
Boost Buck
Boost & Buck Chopper
Common Anode
X
X
X
X
X
Common Cathode
Dual Boost & Buck Chopper
Dual Common Source
Dual Diode
X
X
X
X
X
X
Full Bridge
X
X
X
X
X
X
X
X
X
X
X
Full Bridge + PFC
X
X
X
Full Bridge + Secondary Fast Rectifier Bridge
Full Bridge + Series and Parallel Diodes
Interleaved PFC
X
Linear single and Dual switch
Phase Leg
X
X
X
X
Phase Leg Intelligent
Phase Leg + PFC
X
X
X
X
X
X
X
Phase Leg + Series and Parallel Diodes
Single Switch
X
X
Single Switch + Series and Parallel Diodes
Single Switch + Series Diodes
3-Level NPC Inverter
X
X
X
X
X
X
X
X
X
X
3-Level T-Type Inverter
3-Phase Bridge
X
Triple Dual Common Soure
Triple Phase Leg
X
X
NPT
Trench3
MosFET
FredFET
CoolMOS
Schottky
FRED
Std Rectifier
Thyristor
IGBT
MosFET
Diode
Diode
MosFET
Trench4
Trench4 Fast
17
Packaging
Improved Low Profile Packages
SP1 (12mm)
SP3 (12mm)
SP4 (17mm)
SP6 (17mm)
SP6-P (12mm)
SP4
SP6
SP1
SP3F
SP3
SP6-P
Industry Standard Packages
SOT-227 (Isotop®)
SP2 (17mm)
34mm & 62mm Types
D1 (34 mm Wide)
D3 (62 mm Wide)
D4 (62 mm Wide)
SOT-2
SP2
D4
D1
SD1
SD2
SM1
SM2
SM2-1
SM3
SM3-1
SM4
SM5
SF1
Mini-Mod
Surface Mount
Mini-Mod
TO-249
9-pin TO-249
Twin Tower
VJ
Half Pack
Package Advantages
12 mm
SP module
ISOTOP®
30 mm
SP6 package:
SP1 package:
SP3F package:
SP6-P package:
Offers the same footprint and the same
pinout location as the popular 62mm
package but with lower height, leading to:
- Reduced stray inductance
-Replaces up to 4 SOT-227 parts
-Reduced assembly time and cost
-Height compatible with SOT-227
-Copper base plate
-Replaces up to 6 SOT-227 parts
-Height compatible with SOT-227
-Low inductance solder pins
-High current capability
-Replaces 2 SOT-227 parts
-Improved assembly time and cost
-Height compatible with SOT-227
-Copper base plate
- Reduced parasitic resistance
- Higher efficiency at high frequency
18
Custom Power Modules
Microsemi PMP has created the Application Specific Power Module (ASPM) concept and has been offering customized power modules since 1983. Microsemi PMP offers a
complete engineered solution with mix and match capabilities in term of package, configuration, performance and cost.
Package
Standard or Custom
Internal Printed Circuit Board
Not available in all modules.
Ensure environmental protection and
mechanical robustness
Used to route gate signals tracks to small
signal terminals
Used to mount gate circuit and protection in
case of intelligent power module
Power Semiconductor Die
IGBT, Mosfet, Diode, SiC, Thyristor,
Switching devices soldered to the
substrates and connected by ultrasonic
Al wire bonds
Terminals
Screw on or Solder pins
Provides the user with power and signal
connections with minimum parasitic
resistance and inductance
Base Plate
Substrates
Improve the heat transfer to the heat sink
Copper for good thermal transfer
AlSiC, CuW, CuMoCu for improved
reliability
Al2O3, AlN, Si3N4
Provide isolation and good heat
transfer to the base plate
3 levels of customization are proposed offering different cost and low volume entry:
Change Options:
Die
Substrate
Material
Base plate
Material
Plastic lid
-
Terminals
-
NRE level
MOQ
Elect./thermal performance
Die P/N
None to low
Elect./thermal performance
+ electrical configuration
Die P/N
Die P/N
Material & Layout
Material & Layout
Material
-
-
Low to medium
Medium to high
5 to 10
pieces
Elect./thermal performance
+ electrical configuration
+ module housing
Material & Shape
Material & Shape
Shape
Microsemi PMP power modules are made of different sub-elements. Most of them are standard and can be re-used to build infinite solutions for the end user.
Microsemi PMP offers optimum development cost and cycle time thanks to long term experience and wide range of available technologies.
Power Modules Features
High Power Density
Customer Benefits
Size and cost reduction
Isolated and highly thermally conductive substrate
Internal wiring
Excellent thermal management
Reduced external hardware
Improved performance
Minimum parasitics
Minimum output terminals
Mix & match components
Full engineered solutions
Reduced assembly time
Optimizes losses
Easy upgrade/less parts counts/short time to market/IP protection
FLEXIBILITY
PACKAGING CAPABILITY
Great level of integration
Mix of Silicon within the same package
No quantity limitation
Standard and custom packages
Standard and custom terminals
Various substrate technologies
TECHNOLOGY
RELIABILITY
Application oriented
Coefficient of thermal expansion matching
APPLICATIONS
Solar - Welding - Plasma Cutting - Semicap - MRI & Xray - EV/HEV - Induction Heating - UPS - Motor control - Data Communication
19
Rugged Custom Power Modules
Microsemi PMP has acquired a great experience and
know-how in module customization to address rugged
and wide temperature range application and offers
solution to meet with next generation integrated
power systems expectation in terms of:
Various solutions are proposed offering different cost and low volume of entry:
Extended
Temperature
Application
Harsh
Environment
Application
Industrial
Application
No NRE
Standard Module
Modified Standard
Custom Module
X
X
X
s )MPROVED 2ELIABILITY
s 7IDER /PERATING 4EMPARATURES
s (IGHER 0OWER
s (IGHER %FlCIENCY
s ,OWER 7EIGHT AND 3IZE
s ,OWER #OST
Low Volume Entry
Low NRE
Low Volume Entry
X
X
Medium to High NRE
Low Volume Entry
X
Applications
s !VIONICS ACTUATION SYSTEM
s !VIONICS LIFT AND PUMP
s -ILITARY GROUND VEHICULE
s POWER SUPPLY AND MOTOR CONTROL
s .AVY SHIP AUXILIARY POWER SUPPLY
s $OWN HOLE DRILLING
DBC
Solder
Dice
Substrate Joint
Solder
Joint
Module performance and
reliability depends on the choice
of the assembly materials
Base
Plate
CTE
(ppm/K) conductivity (K/W)
(W/m.K)
Thermal
Rthjc
More closely matched materials TCE’s increase the
module life time because it will result in much less
stress at the interface of the materials and inside the
materials.
Test Capabilities
s 8ꢋRAYS INSPECTION
s $IELECTRIC TEST ꢆUP TO ꢌ+6ꢇ
s %LECTRICAL TESTING AT SPECIlED TEMPERATURE
s "URNꢋIN
Silicon Die (120 mm2)
Cu/Al2O3
4
136
17/7
7/7
390/25
170/25
390/170
170/170
170/60
0.35
0.38
0.28
0.31
0.31
The higher the thermal conductivity, the lower is the
junction to case thermal resistance and the lower
will be the delta of junction temperature of the
device during operation such that the effect of power
cycling on the dice will be minimized.
s !COUSTIC IMAGING
AlSiC/Al2O3
Cu/AlN
17/5
7/5
Reliability Testing Capabilities
s 0OWER CYCLING
s (ERMETIC SEALING
s -OISTURE
AlSiC/AlN
AlSiC/Si3N4
7/3
Another important feature is the material density
particularly for the baseplate. Taking copper as
the reference, Alsic has a density of 1/3 while Cuw
has twice the density. Therefore AlSiC will provide
substantial weight reduction at the same time as
reliability increase.
s 3ALT ATMOSPHERE
s (4'"
s 4EMPERATURE SHOCK
s (!34
s (ꢎ42"
s !LTITUDE
Material
CuW
CTE
Thermal
Density
(ppm/K) conductivity (g/cc)
(W/m.K)
6.5
7
17
190
170
390
17
2.9
8.9
Base plate
AlSiC
Cu
s -ECHANICAL SHOCKꢈ VIBRATION
Al2O3
AlN
Si3N4
7
5
3
25
170
60
-
-
-
Substrate
Die
Expertise Capabilities
s #ROSSꢋSECTIONING
s 3TRUCTURAL ANALYSIS
Si
SiC
4
2.6
136
270
-
-
All tests can be conducted upon demand by sampling or
at 100%. Tests performed in house or with external lab.
Our Core Competencies
s %XTENSIVE EXPERIENCE OF RUGGED SOLUTIONS FOR
harsh environments
s 7IDE RANGE OF 3ILICON TECHNOLOGIES
s 7AFER FAB CAPABILITIES
s -IX OF ASSEMBLY TECHNOLOGIES
s (ERMETIC AND ROBUST PLASTIC PACKAGES
s #USTOM TEST ꢂ BURNꢋIN SOLUTIONS
s )3/ꢏꢄꢄꢅ CERTIlED
s %NDꢋOFꢋLIFE ꢆOBSOLESCENCEꢇ MANAGEMENT
s 4HERMAL MANAGEMENT
s -ATERIAL EXPERTISE
s 0RODUCT LIFE MANAGEMENT ASSOCIATED TO RISKS
analysis
20
Power Module Part Numbering System
IGBT Modules
MOSFET Modules
Diode Modules
APT GL 475
A
120
T
D3
G
APT
C
60 DA M24
T
1
G
APT DR 90
X
160
1
G
I
II III IV
V
VI VII VIII
I
II III IV
V
VI VII
I
II
III IV VI VII VIII
V
Trade Mark
IGBT Type:
GF = NPT or NPT FAST
GFQ = NPT ULTRA FAST
GL = TRENCH 4
Trade Mark
Trade Mark
I
I
I
MOSFET Type:
MC = MOSFET SiC
M = MOSFET
Diode Type:
DF = FRED
DRꢀ ꢀ6WDQGDUGꢀ5HFWLÀHU
DC = SiC
II
II
C = CoolMOS
II
GT = TRENCH 3
DSK = Schottky
GV = Mix NPT/TRENCH
CV = Mix TRENCH/CoolMOS
Blocking Voltage:
08 = 75V
10 = 100V
20 = 200V
50 = 500V
80 = 800V
Current:
IF @ Tc=80°C
III
90 = 900V
100 = 100V
120 = 120V
III
Current:
Ic @ Tc=80°C
III
Topology:
60 = 600V
AA = Dual Common Anode
BB = Boost Buck
Topology:
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
Topology:
AK = Dual Series
IV
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level NPC
KK = Dual Common Cathode
H = Single Phase Bridge
U = Single Switch
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
X = Three Phase Bridge
Blocking Voltage:
20 = 200V
40 = 400V
IV
IV
60 = 600V
V
100 = 1000V
120 = 1200V
160 = 1600V
170 = 1700V
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level
U = Single Switch
VDA = Interleaved PFC
X = Three Phase Bridge
U = Single Switch
VDA = Interleaved PFC
Package:
1 = SP1
3 = SP3
VI
Blocking Voltage:
60 = 600V
120 = 1200V
170 = 1700V
RDSON @ Tc=25°C
240ꢀ ꢀꢁꢂꢃꢃPƟ
24ꢀ ꢀꢁꢂꢃPƟ
G = RoHS Compliant
VII
V
V
M24ꢀ ꢀꢁꢂPƟ
Option:
Option:
A = AIN Substrate
C = SiC Diode
D = Series Diode
T = Temperature Sensor
W = Clamping Parallel Diode
A = AlN Substrate
C = SiC Diode
D = Series Diode
VI
VI
F = FREDFET
S = Series and Parallel Diodes
T = Temperature Sensor
U = Ultrafast FREDFET
Package:
1 = SP1
2 = SP2
3 = SP3
Package:
1 = SP1
VII
P = SP6-P
2 = SP2
VII
D1 = D1 (34mm)
D3 = D3 (62mm)
D4 = D4 (62mm)
3 = SP3
P = SP6-P
G = RoHS Compliant
VIII
G = RoHS Compliant
VIII
Optional Materials
Optional materials are available upon demand on most of the
listed standard power modules. Options are indicated with a
letter in the suffix of the module part number. Temperature
Sensor Option is indicated in the catalog with "YES" or
"option" when available on standard part or on demand.
A
M
T
AIN Substrate for higher thermal conductivity
AlSiC Base plate material for improved temperature cycling capabilities
Temperature Sensor (NTC or PTC) for Case Temperature information
SiC Diode for higher efficiency
Si3N4 Substrate
Press fit terminals (for SP3 package only)
C
N
E
21
IGBT Power Modules
CHOPPER AND PHASE LEG
VCES
(V)
IGBT
Type
IC (A)
VCE (on)(V)
Package
NTC
SOT-227
TC=80º C at rated Ic
…DA... or ...U2
APTGF250DA60D3G
APTGF330DA60D3G
APT30GF60JU2
N/A
APT50GF60JU2
APT60GF60JU2
APTGF90DA60T1G
APT100GF60JU2
N/A
APTGF165DA60D1G
APTGF180DA60TG
APTGF350DA60G
APTGT75DA60T1G
APTGT100DA60T1G
N/A
...SK... or ...U3
APTGF250SK60D3G
APTGF330SK60D3G
APT30GF60JU3
N/A
APT50GF60JU3
APT60GF60JU3
APTGF90SK60T1G
APT100GF60JU3
N/A
APTGF165SK60D1G
APTGF180SK60TG
APTGF350SK60G
APTGT75SK60T1G
APTGT100SK60T1G
N/A
…A...
option
option
-
YES
-
-
YES
-
YES
-
YES
option
YES
YES
250
330
30
30
50
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
2.1
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
D3
D3
SOT227
SP1
SOT227
SOT227
SP1
SOT227
SP3
D1
SP4
SP6
SP1
SP1
SP2
SP1
SP3
SP2
SP3
SP4
SP6
D3
D3
SP6
SP6
SP1
SP6
SP1
SP1
SP1
SP1
SP2
SP3
SP4
SP3
SP4
D3
APTGF250A60D3G
APTGF330A60D3G
N/A
APTGF30A60T1G
N/A
NPT
SP1
60
90
N/A
APTGF90A60T1G
N/A
NPT FAST
100
150
165
180
350
75
APTGF150A60T3AG
APTGF165A60D1G
APTGF180A60TG
APTGF350A60G
APTGT75A60T1G
APTGT100A60T1G
APTGT100A602G
APTGT150A60T1G
APTGT150A60T3AG
APTGT200A602G
APTGT200A60T3AG
APTGT300A60TG
APTGT300A60G
APTGT300A60D3G
APTGT400A60D3G
APTGT450A60G
APTGT600A60G
APTGLQ100A65T1G
APTGLQ600A65T6G
APTGF15A120T1G
APTGF50A120T1G
N/A
600
100
100
150
150
200
200
300
300
300
400
450
600
100
600
15
SP2
SP3
-
YES
YES
-
YES
YES
option
option
option
option
option
YES
YES
YES
YES
YES
YES
-
YES
YES
YES
YES
option
option
option
YES
-
-
APTGT150DA60T1G
N/A
APTGT150SK60T1G
N/A
N/A
N/A
TRENCH3
APTGT200DA60T3AG
N/A
APTGT200SK60T3AG
N/A
APTGT300DA60G
APTGT300DA60D3G
APTGT400DA60D3G
APTGT450DA60G
APTGT600DA60G
N/A
APTGT300SK60G
APTGT300SK60D3G
APTGT400SK60D3G
APTGT450SK60G
APTGT600SK60G
N/A
NEW!
NEW!
650 TRENCH 4 FAST
N/A
N/A
N/A
N/A
50
75
APTGF50DA120T1G
APTGF75DA120T1G
APTGF100DA120T1G
N/A
APTGF50SK120T1G
N/A
100
100
100
100
150
150
200
300
300
35
35
50
50
50
50
75
75
N/A
N/A
N/A
N/A
APTGF100A1202G
APTGF100A120T3AG
APTGF100A120TG
APTGF150A120T3AG
APTGF150A120TG
APTGF200A120D3G
APTGF300A120G
APTGF300A120D3G
APTGT35A120T1G
N/A
N/A
NPT FAST
APTGF100DA120TG
N/A
APTGF150DA120TG
N/A
APTGF300DA120G
APTGF300DA120D3G
N/A
APT35GT120JU2
APT50GT120JU2
N/A
APTGF100SK120TG
N/A
APTGF150SK120TG
N/A
APTGF300SK120G
APTGF300SK120D3G
N/A
APT35GT120JU3
APT50GT120JU3
N/A
1200
SP6
D3
SP1
SOT227
SOT227
SP1
SP2
SP4
N/A
YES
-
YES
-
APTGT50A120T1G
APTGT50A1202G
N/A
D1
TRENCH 3
N/A
N/A
APTGT50DA120TG
APT75GT120JU2
N/A
APTGT50SK120TG
APT75GT120JU3
N/A
SOT227
SP1
N/A
YES
APTGT75A120T1G
continued next page
All Power Modules RoHS Compliant
22
IGBT Power Modules
CHOPPER AND PHASE LEG CONT.
VCES
(V)
IGBT
Type
IC (A)
VCE (on)(V)
Package
NTC
SOT-227
TC=80º C at rated Ic
…DA... or ...U2
N/A
APTGT75DA120TG
APTGT100DA120T1G
APT100GT120JU2
N/A
...SK... or ...U3
N/A
APTGT75SK120TG
N/A
APT100GT120JU3
N/A
…A...
APTGT75A1202G
N/A
-
75
75
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.85
1.85
1.85
1.85
1.85
1.85
1.85
2.05
2.05
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
SP2
SP4
SP1
SOT227
D1
SP2
SP3
SP4
SP6
D1
SP2
SP3
SP4
SP6
D3
SP6
D3
SP6
D3
SOT227
SP1
SP2
SP3
D3
YES
YES
-
-
-
YES
YES
option
-
-
YES
YES
option
option
option
option
option
option
100
100
100
100
100
100
150
150
150
150
150
200
200
300
300
400
400
40
N/A
N/A
APTGT100A120D1G
APTGT100A1202G
APTGT100A120T3AG
APTGT100A120TG
APTGT150A120G
APTGT150A120D1G
APTGT150A1202G
APTGT150A120T3AG
APTGT150A120TG
APTGT200A120G
APTGT200A120D3G
APTGT300A120G
APTGT300A120D3G
APTGT400A120G
APTGT400A120D3G
N/A
APTGL90A120T1G
APTGL180A1202G
APTGL180A120T3AG
APTGL325A120D3G
APTGL475A120D3G
N/A
APTGLQ100A120T3AG
APTGLQ400A120T6G
APTGT30A170T1G
APTGT50A170T1G
APTGT50A170TG
N/A
SP1
N/A
N/A
N/A
N/A
N/A
N/A
APTGT150DA120G
APTGT150DA120D1G
N/A
APTGT150SK120G
APTGT150SK120D1G
N/A
TRENCH 3
N/A
N/A
N/A
N/A
APTGT200DA120G
APTGT200DA120D3G
APTGT300DA120G
APTGT300DA120D3G
APTGT400DA120G
N/A
APT40GL120JU2
APTGL90DA120T1G
N/A
APTGT200SK120G
APTGT200SK120D3G
APTGT300SK120G
APTGT300SK120D3G
APTGT400SK120G
N/A
APT40GL120JU3
APTGL90SK120T1G
N/A
1200
SP3
-
YES
-
YES
option
option
option
YES
YES
YES
YES
YES
YES
90
180
180
325
475
700
100
400
30
50
50
75
75
100
150
200
225
300
300
TRENCH 4
N/A
N/A
APTGL325DA120D3G
APTGL475DA120D3G
APTGL700DA120D3G
N/A
APTGL325SK120D3G
APTGL475SK120D3G
APTGL700SK120D3G
N/A
D3
D3
SP4
NEW!
NEW!
SP3
SP6
SP1
SP1
SP4
SP1
D1
SP4
SP6
D3
TRENCH 4 FAST
N/A
N/A
APTGT30DA170T1G
APTGT50DA170T1G
APTGT50DA170TG
APTGT75DA170T1G
APTGT75DA170D1G
APTGT100DA170TG
APTGT150DA170G
APTGT200DA170D3G
APTGT225DA170G
APTGT300DA170G
APTGT300DA170D3G
APTGT30SK170T1G
APTGT50SK170T1G
APTGT50SK170TG
N/A
APTGT75SK170D1G
APTGT100SK170TG
APTGT150SK170G
APTGT200SK170D3G
APTGT225SK170G
APTGT300SK170G
APTGT300SK170D3G
-
APTGT75A170D1G
APTGT100A170TG
APTGT150A170G
APTGT200A170D3G
APTGT225A170G
APTGT300A170G
APTGT300A170D3G
1700
TRENCH 3
YES
option
option
option
option
option
SP6
SP6
D3
D1
3 PHASE BRIDGE
VCES
IGBT
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
(V)
Type
30
50
30
50
75
15
25
25
35
40
2.1
2.1
1.5
1.5
1.5
3.2
3.2
1.7
1.7
1.85
SP3
SP3
SP3
SP3
SP3
SP3
SP3
SP3
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
APTGF30X60T3G
APTGF50X60T3G
APTGT30X60T3G
APTGT50X60T3G
APTGT75X60T3G
APTGF15X120T3G
APTGF25X120T3G
APTGT25X120T3G
APTGT35X120T3G
APTGL40X120T3G
NPT FAST
TRENCH 3
NPT FAST
600
1200
TRENCH 3
TRENCH 4
All Power Modules RoHS Compliant
23
IGBT Power Modules
PHASE LEG FOR WELDING APPLICATION
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
100
150
3.2
3.2
SP3
SP3
YES
YES
APTGF100A120T3WG
APTGF150A120T3WG
1200
NPT FAST
SP3
SP
TRIPLE PHASE LEG
VCES
IGBT
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
(V)
Type
option
option
option
option
option
option
YES
NPT FAST
90
50
75
150
50
75
2.1
1.5
1.5
1.5
3.2
1.7
1.7
1.85
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
APTGF90TA60PG
APTGT50TA60PG
APTGT75TA60PG
APTGT150TA60PG
APTGF50TA120PG
APTGT75TA120PG
APTGT100TA120TPG
APTGL120TA120TPG
600
TRENCH 3
NPT FAST
TRENCH 3
TRENCH 4
1200
100
120
YES
TRIPLE DUAL COMMON SOURCE
VCES
IGBT
IC (A)
VCE (on)(V)
Package
NTC
Part Number
(V)
Type
TC=80º C
at rated Ic
option
option
option
option
option
option
50
75
100
150
50
75
120
50
1.5
1.5
1.5
1.5
3.2
1.7
1.85
2.0
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
APTGT50TDU60PG
APTGT75TDU60PG
APTGT100TDU60PG
APTGT150TDU60PG
APTGF50TDU120PG
APTGT75TDU120PG
APTGL120TDU120TPG
APTGT50TDU170PG
-
600
TRENCH 3
NPT FAST
TRENCH 3
TRENCH 4
TRENCH 3
1200
1700
YES
option
INTERLEAVED PFC
VCES
IGBT
IC (A)
VCE (on)(V)
Package
NTC
Part Number
(V)
Type
TC=80º C
at rated Ic
600
1200
50
50
2.1
3.2
SP3
SP3
YES
YES
APTGF50VDA60T3G
APTGF50VDA120T3G
NPT FAST
DUAL CHOPPER
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
...DDA...
...DSK...
NPT FAST
TRENCH 3
50
50
75
25
50
75
50
60
90
2.1
1.5
1.5
3.2
3.2
3.2
1.7
1.85
1.85
SP3
SP3
SP3
SP3
SP3
SP4
SP3
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
YES
YES
APTGF50DDA60T3G
APTGT50DDA60T3G
APTGT75DDA60T3G
APTGF25DDA120T3G APTGF25DSK120T3G
APTGF50DDA120T3G APTGF50DSK120T3G
APTGF50DSK60T3G
APTGT50DSK60T3G
APTGT75DSK60T3G
600
NPT FAST
APTGF75DDA120TG
APTGF75DSK120TG
1200
TRENCH 3
TRENCH 4
APTGT50DDA120T3G APTGT50DSK120T3G
APTGL60DDA120T3G APTGL60DSK120T3G
APTGL90DDA120T3G APTGL90DSK120T3G
All Power Modules RoHS Compliant
24
IGBT Power Modules
FULL & ASYMMETRICAL BRIDGE
VCES
(V)
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
...H...
...DH...
30
30
50
50
50
90
180
20
30
50
2.1
2.1
2.1
2.1
2.1
2.1
2.1
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.85
1.85
SP1
SP3
SP1
SP2
SP3
SP3
SP6
SP1
SP1
SP1
SP2
SP3
SP1
SP2
SP3
SP4
SP3
SP4
SP6
SP6
SP1
SP6
YES
YES
YES
YES
YES
YES
-
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
-
APTGF30H60T1G
APTGF30H60T3G
APTGF50H60T1G
APTGF50H60T2G
APTGF50H60T3G
APTGF90H60T3G
APTGF180H60G
APTGT20H60T1G
APTGT30H60T1G
APTGT50H60T1G
APTGT50H60T2G
APTGT50H60T3G
APTGT75H60T1G
APTGT75H60T2G
APTGT75H60T3G
APTGT100H60TG
APTGT100H60T3G
APTGT150H60TG
APTGT200H60G
APTGT300H60G
APTGLQ75H65T1G
APTGLQ300H65G
N/A
N/A
APTGF50DH60T1G
N/A
NPT FAST
SP1
SP2
N/A
APTGF90DH60T3G
APTGF180DH60G
N/A
N/A
APTGT50DH60T1G
N/A
600
50
50
75
75
N/A
APTGT75DH60T1G
N/A
TRENCH 3
75
N/A
100
100
150
200
300
75
APTGT100DH60TG
APTGT100DH60T3G
APTGT150DH60TG
APTGT200DH60G
APTGT300DH60G
N/A
-
YES
option
NEW!
NEW!
TRENCH 4
FAST
650
300
N/A
NPT
ULTRA FAST
25
2.1
SP2
YES
APTGFQ25H120T2G
N/A
SP3
15
25
25
25
50
50
75
150
35
50
50
50
75
75
100
100
150
200
40
60
90
40
75
200
30
50
100
150
3.2
3.2
2.1
3.2
3.2
3.2
3.2
3.2
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.85
1.85
1.85
2.05
2.05
2.05
2.0
2.0
2.0
2.0
SP1
SP1
SP2
SP3
SP3
SP4
SP4
SP6
SP3
SP3
SP4
SP3
SP3
SP4
SP4
SP6
SP6
SP6
SP1
SP3
SP3
SP1
SP3
SP6
SP3
SP4
SP6
SP6
YES
YES
YES
YES
YES
YES
YES
-
YES
YES
YES
YES
YES
YES
YES
-
APTGF15H120T1G
APTGF25H120T1G
APTGF25H120T2G
APTGF25H120T3G
N/A
APTGF50H120TG
APTGF75H120TG
APTGF150H120G
APTGT35H120T3G
N/A
APTGT50H120TG
APTGT50H120T3G
N/A
APTGT75H120TG
N/A
APTGT100H120G
APTGT150H120G
APTGT200H120G
APTGL40H120T1G
APTGL60H120T3G
APTGL90H120T3G
APTGLQ40H120T1G
APTGLQ75H120T3G
APTGLQ200H120G
APTGT30H170T3G
APTGT50H170TG
APTGT100H170G
APTGT150H170G
N/A
N/A
N/A
N/A
NPT FAST
APTGF50DH120T3G
APTGF50DH120TG
APTGF75DH120TG
APTGF150DH120G
N/A
APTGT50DH120T3G
APTGT50DH120TG
N/A
APTGT75DH120T3G
APTGT75DH120TG
APTGT100DH120TG
N/A
APTGT150DH120G
APTGT200DH120G
N/A
1200
TRENCH 3
TRENCH 4
-
-
YES
YES
YES
YES
YES
option
YES
YES
-
-
APTGL60DH120T3G
APTGL90DH120T3G
N/A
NEW!
NEW!
NEW!
TRENCH 4
FAST
N/A
N/A
N/A
SP6 Full Bridge
APTGT50DH170TG
APTGT100DH170G
APTGT150DH170G
1700
TRENCH 3
All Power Modules RoHS Compliant
25
IGBT Power Modules
SINGLE SWITCH
VCES
IGBT
IC (A)
VCE (on)(V)
Package
NTC
Part Number
(V)
Type
TC=80º C
at rated Ic
360
500
660
750
530
400
600
475
700
400
600
2.1
2.1
2.1
1.5
3.2
1.7
1.7
1.85
1.85
2.0
2.0
D4
D4
D4
D4
D4
D4
D4
D4
D4
D4
D4
-
-
-
-
-
-
-
-
-
-
-
APTGF360U60D4G
APTGF500U60D4G
APTGF660U60D4G
APTGT750U60D4G
APTGF530U120D4G
APTGT400U120D4G
APTGT600U120D4G
APTGL475U120D4G
APTGL700U120D4G
APTGT400U170D4G
APTGT600U170D4G
NPT FAST
600
TRENCH 3
NPT FAST
TRENCH 3
TRENCH 4
TRENCH 3
1200
1700
D4
+
SINGLE SWITCH SERIES DIODE
VCES
IGBT
IC (A)
VCE (on)(V)
Package
NTC
Part Number
(V)
Type
TC=80º C
at rated Ic
200
300
475
3.2
3.2
1.85
SP6
SP6
SP6
-
-
-
APTGF200U120DG
APTGF300U120DG
APTGL475U120DAG
NPT FAST
TRENCH 4
1200
DUAL COMMON SOURCE
SP4
VCES
IGBT
IC (A)
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
(V)
Type
TC=80º C
90
2.1
2.1
2.1
1.5
1.5
1.4
1.4
3.2
3.2
3.2
1.7
1.7
1.7
1.7
1.7
1.7
1.7
1.7
2.0
2.0
2.0
SP4
SP4
SP6
SP4
SP4
SP6
SP6
SP4
SP4
SP6
SP4
SP4
SP4
SP6
SP4
SP6
SP6
SP6
SP4
SP6
SP6
YES
YES
-
YES
YES
-
APTGF90DU60TG
APTGF180DU60TG
APTGF350DU60G
APTGT100DU60TG
APTGT200DU60TG
APTGT300DU60G
APTGT600DU60G
APTGF100DU120TG
APTGF150DU120TG
APTGF300DU120G
APTGT50DU120TG
APTGT75DU120TG
APTGT100DU120TG
APTGT150DU120G
APTGT150DU120TG
APTGT200DU120G
APTGT300DU120G
APTGT400DU120G
APTGT100DU170TG
APTGT225DU170G
APTGT300DU170G
NPT FAST
TRENCH 3
NPT FAST
180
350
100
200
300
600
100
150
300
50
600
-
YES
YES
-
YES
YES
YES
-
YES
-
-
75
1200
1700
100
150
150
200
300
400
100
225
300
TRENCH 3
TRENCH 3
SP6
-
YES
-
-
Intelligent Power Modules
PHASE LEG
VCES
IGBT
Type
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Package
NTC
Part Number
(V)
NPT FAST
TRENCH 3
NPT FAST
TRENCH 3
TRENCH 4
350
400
300
300
325
2.1
1.5
3.2
1.7
1.8
LP8
LP8
LP8
LP8
LP8
-
-
-
-
-
APTLGF350A608G
APTLGT400A608G
APTLGF300A1208G
APTLGT300A1208G
APTLGL325A1208G
600
1200
LP8
26
MOSFET Power Modules
CHOPPER
VDSS
(V)
MOSFET
Type
RDS (ON)
(m1)
ID (A)
TC=80º C
Package
NTC
SOT-227
SP1
DA...or...U2
APT10M11JVRU2
APTM10DAM05TG
APTM10DAM02G
APT20M22JVRU2
APTM20DAM08TG
APTM20DAM05G
APTM20DAM04G
APT5010JVRU2
SK...or...U3
APT10M11JVRU3
APTM10SKM05TG
APTM10SKM02G
APT20M22JVRU3
APTM20SKM08TG
APTM20SKM05G
APTM20SKM04G
APT5010JVRU3
APT5010JLLU3
APT50M75JLLU3
APTM50SKM19G
APTM50SKM17G
APT58M50JU3
APT40N60JCU3
APTC60SKM24T1G
APT33N90JCU3
APTC90SKM60T1G
APTM100SK18TG
APTM100SKM90G
APTM100SK33T1G
APTM120SK56T1G
N/A
11
4.5
2.25
22
8
5
100
207
370
71
147
250
300
30
30
32
125
140
43
40
70
25
44
33
59
17
13
SOT-227
SP4
SP6
SOT-227
SP4
SP6
-
YES
-
100
200
MOS 5
MOS 5
MOS 7
MOS 5
-
YES
option
option
-
-
4
SP6
100
100
75
19
17
65
70
24
120
60
180
90
330
560
300
SOT-227
SOT-227
SOT-227
SP6
APT5010JLLU2
-
APT50M75JLLU2
APTM50DAM19G
APTM50DAM17G
APT58M50JU2
APT40N60JCU2
APTC60DAM24T1G
APT33N90JCU2
APTC90DAM60T1G
APTM100DA18TG
APTM100DAM90G
APTM100DA33T1G
APTM120DA56T1G
APTM120DA30T1G
500
MOS 7
option
option
-
-
YES
-
YES
YES
option
YES
YES
YES
SP6
MOS 8
SOT-227
SOT-227
SP1
SOT-227
SP1
SP4
SP6
SP1
SP1
SP3
600
900
COOLMOS
COOLMOS
MOS 7
MOS 8
MOS 8
1000
1200
23
SP1
SP
DUAL CHOPPER
VDSS
(V)
MOSFET
Type
RDS (ON)
(m1)
ID (A)
TC=80º C
Package
NTC
...DDA...
...DSK...
19
9
100
65
45
70
35
24
150
120
350
570
50
100
24
37
38
29
54
70
21
23
17
13
SP3
SP3
SP3
SP3
SP1
SP1
SP3
SP3
SP3
SP1
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
APTM10DDAM19T3G
APTM10DDAM09T3G
APTM50DDA10T3G
APTM50DDAM65T3G
APTC60DDAM45T1G
APTC60DDAM70T1G
APTC60DDAM35T3G
APTC60DDAM24T3G
APTC80DDA15T3G
APTC90DDA12T1G
APTM100DDA35T3G
APTM120DDA57T3G
APTM10DSKM19T3G
APTM10DSKM09T3G
APTM50DSK10T3G
APTM50DSKM65T3G
APTC60DSKM45T1G
APTC60DSKM70T1G
APTC60DSKM35T3G
APTC60DSKM24T3G
APTC80DSK15T3G
APTC90DSK12T1G
APTM100DSK35T3G
APTM120DSK57T3G
100
500
MOS 5
MOS 7
600
COOLMOS
800
900
1000
1200
COOLMOS
COOLMOS
MOS 7
MOS 7
“CoolMOSTM” is a trademark of Infineon Technologies AG”.
All Power Modules RoHS Compliant
27
MOSFET Power Modules
FULL BRIDGE
VDSS
MOSFET
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
Type
(m1)
TC=80º C
4.5
19
9
20
16
10
8
140
100
75
75
65
65
38
35
150
70
45
83
207
50
100
62
74
125
147
18
24
32
32
37
37
64
70
19
29
38
21
29
54
70
15
21
11
21
23
23
44
14
17
17
33
14
25
6
SP6
SP3
SP3
SP4
SP4
SP6
SP6
SP3
SP3
SP4
SP3
SP4
SP3
SP6
SP6
SP1
SP1
SP1
SP2
SP3
SP3
SP3
SP1
SP1
SP3
SP3
SP1
SP2
SP3
SP3
SP4
SP3
SP6
SP3
SP6
SP1
-
APTM10HM05FG
APTM10HM19FT3G
APTM10HM09FT3G
APTM20HM20FTG
APTM20HM16FTG
APTM20HM10FG
APTM20HM08FG
APTM50H14FT3G
APTM50H10FT3G
APTM50HM75FTG
APTM50HM75FT3G
APTM50HM65FTG
APTM50HM65FT3G
APTM50HM38FG
APTM50HM35FG
APTM50H15FT1G
APTC60HM70T1G
APTC60HM45T1G
APTC60HM83FT2G
APTC60HM70T3G
APTC60HM35T3G
APTC60HM24T3G
APTM60H23FT1G
APTC80H15T1G
APTC80H29T3G
APTC80H15T3G
APTC90H12T1G
APTC90H12T2G
APTC90HM60T3G
APTM100H45FT3G
APTM100H35FTG
APTM100H35FT3G
APTM100H18FG
APTM100H46FT3G
APTM120H29FG
APTM120H140FT1G
100
200
FREDFET 5
FREDFET 7
YES
YES
YES
YES
-
SP1
-
YES
YES
YES
YES
YES
YES
-
FREDFET 7
500
600
SP2
SP3
-
FREDFET 8
COOLMOS
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
YES
-
70
35
24
FREDFET 8
COOLMOS
230
150
290
150
120
120
60
450
350
350
180
460
290
1400
800
900
COOLMOS
FREDFET 7
SP
1000
1200
FREDFET 8
FREDFET 7
FREDFET 8
YES
-
YES
+
FULL BRIDGE SERIES AND PARALLEL DIODES
VDSS
MOSFET
Type
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
(m1)
TC=80º C
200
500
1000
MOS 7
MOS 7
MOS 7
20
75
450
62
32
13
SP4
SP4
SP4
YES
YES
YES
APTM20HM20STG
APTM50HM75STG
APTM100H45STG
ASYMMETRICAL BRIDGE
VDSS
MOSFET
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
Type
(m1)
TC=80º C
9
4.5
16
8
38
35
65
24
100
207
77
147
64
70
32
70
SP3
SP6
SP3
SP6
SP6
SP6
SP3
SP3
YES
APTM10DHM09T3G
APTM10DHM05G
APTM20DHM16T3G
APTM20DHM08G
APTM50DHM38G
APTM50DHM35G
APTM50DHM65T3G
APTC60DHM24T3G
100
200
MOS 5
MOS 7
MOS 7
-
YES
-
-
-
500
600
MOS 8
COOLMOS
YES
YES
“CoolMOSTM” is a trademark of Infineon Technologies AG”.
All Power Modules RoHS Compliant
28
MOSFET Power Modules
PHASE LEG
VDSS
MOSFET
Type
RDS (ON)
(m1)
ID (A)
TC=80º C
Package
NTC
Part Number
(V)
4.5
2.25
10
8
5
4
38
35
19
17
45
42
35
24
24
110
60
60
207
370
125
147
250
300
64
SP4
SP6
SP4
SP4
SP6
SP6
SP4
SP4
SP6
SP6
SP1
SP2
SP1
SP1
SP2
SP1
SP1
SP2
SP4
SP6
SP1
SP4
SP6
SP1
YES
option
YES
YES
option
option
YES
YES
option
option
YES
-
YES
YES
-
YES
YES
-
YES
option
APTM10AM05FTG
APTM10AM02FG
APTM20AM10FTG
APTM20AM08FTG
APTM20AM05FG
APTM20AM04FG
APTM50AM38FTG
APTM50AM35FTG
APTM50AM19FG
APTM50AM17FG
APTC60AM45T1G
APTC60AM42F2G
APTC60AM35T1G
APTC60AM24T1G
APTC60AM242G
APTM60A11FT1G
APTC90AM60T1G
APTC90AM602G
APTM100A18FTG
APTM100AM90FG
APTM100A40FT1G
APTM120A29FTG
APTM120A15FG
APTM120A65FT1G
100
200
FREDFET 5
SP1
SP2
FREDFET 7
70
500
600
FREDFET 7
COOLMOS
125
140
38
40
54
70
70
30
44
44
33
59
16
25
45
12
FREDFET 8
COOLMOS
900
180
90
400
290
150
650
FREDFET 7
FREDFET 8
FREDFET 7
FREDFET 8
1000
SP4
YES
YES
option
1200
YES
+
PHASE LEG SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(m1)
ID (A)
TC=80º C
Package
NTC
Part Number
10
6
38
125
225
64
110
26
SP4
SP6
SP4
SP6
SP4
SP6
SP6
YES
-
YES
-
YES
-
-
APTM20AM10STG
APTM20AM06SG
APTM50AM38STG
APTM50AM24SG
APTM100A23STG
APTM100A13SG
APTM120A20SG
200
500
MOS 7
MOS 7
24
230
130
200
1000
1200
MOS 7
MOS 7
49
37
+
PHASE LEG SERIES DIODES
VDSS
MOSFET
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
Type
(m1)
TC=80º C
1000
1200
MOS 7
MOS 7
130
200
49
37
SP6
SP6
-
-
APTM100A13DG
APTM120A20DG
TRIPLE PHASE LEG
VDSS
(V)
75
MOSFET
RDS (ON)
(m1)
ID (A)
TC=80º C
Package
NTC
Part Number
Type
option
option
option
option
option
option
YES
option
YES
option
MOSFET
4.2
19
9
16
65
35
24
150
60
350
90
50
100
74
37
54
70
21
44
17
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
SP6-P
APTM08TAM04PG
APTM10TAM19FPG
APTM10TAM09FPG
APTM20TAM16FPG
APTM50TAM65FPG
APTC60TAM35PG
APTC60TAM24TPG
APTC80TA15PG
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
600
COOLMOS
800
900
1000
COOLMOS
COOLMOS
FREDFET 7
APTC90TAM60TPG
APTM100TA35FPG
“CoolMOSTM” is a trademark of Infineon Technologies AG”.
All Power Modules RoHS Compliant
29
MOSFET Power Modules
TRIPLE DUAL COMMON SOURCE
VDSS
MOSFET
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
Type
(m1)
TC=80º C
option
option
option
option
100
600
800
MOS 5
COOLMOS
COOLMOS
MOS 7
9
35
150
570
100
54
21
SP6-P
SP6-P
SP6-P
SP6-P
APTM10TDUM09PG
APTC60TDUM35PG
APTC80TDU15PG
APTM120TDU57PG
SP1
SP3
1200
13
DUAL COMMON SOURCE
VDSS
(V)
MOSFET
Type
RDS (ON)
(m1)
ID (A)
TC=80º C
Package
NTC
Part Number
100
MOS 5
2.25
8
5
370
147
250
300
70
140
59
45
SP6
SP4
SP6
SP6
SP4
SP6
SP6
SP6
-
APTM10DUM02G
APTM20DUM08TG
APTM20DUM05G
APTM20DUM04G
APTM50DUM35TG
APTM50DUM17G
APTM100DUM90G
APTM120DU15G
YES
-
-
200
MOS 7
4
35
17
90
150
YES
500
MOS 7
-
-
-
1000
1200
MOS 7
MOS 7
SP4
SINGLE SWITCH
VDSS
MOSFET
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
Type
(m1)
TC=80º C
option
option
option
option
option
option
option
2.25
1.5
3
430
640
434
371
97
SP6
SP6
SP6
SP6
SP6
SP6
SP6
APTM10UM02FAG
APTM10UM01FAG
APTM20UM03FAG
APTM50UM09FAG
APTM100UM60FAG
APTM100UM45FAG
APTM120UM70FAG
100
FREDFET 5
200
500
FREDFET 7
FREDFET 7
9
60
45
70
1000
1200
FREDFET 7
FREDFET 7
160
126
+
SINGLE SWITCH SERIES DIODE
VDSS
MOSFET
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
Type
(m1)
TC=80º C
65
45
70
110
160
126
SP6
SP6
SP6
-
-
-
APTM100UM65DAG
APTM100UM45DAG
APTM120UM70DAG
1000
1200
MOS 7
MOS 7
+
SINGLE SWITCH SERIES AND PARALLEL DIODES
VDSS
(V)
MOSFET
Type
RDS (ON)
(m1)
ID (A)
TC=80º C
Package
NTC
Part Number
option
option
option
option
200
500
1000
1200
MOS 7
MOS 7
MOS 7
MOS 7
4
13
65
100
310
250
110
86
SP6
SP6
SP6
SP6
APTM20UM04SAG
APTM50UM13SAG
APTM100UM65SAG
APTM120U10SAG
INTERLEAVED PFC
VDSS
MOSFET
RDS (ON)
ID (A)
Package
NTC
Part Number
(V)
Type
(m1)
TC=80º C
45
24
350
570
38
70
17
13
SP1
SP3
SP3
SP3
YES
YES
YES
YES
APTC60VDAM45T1G
APTC60VDAM24T3G
APTM100VDA35T3G
APTM120VDA57T3G
600
COOLMOS
MOS 7
1000
1200
“CoolMOSTM” is a trademark of Infineon Technologies AG”.
All Power Modules RoHS Compliant
30
MOSFET Power Modules
SINGLE AND DUAL LINEAR MOSFET
VDSS
(V)
MOSFET
Type
RDS (ON)
(m1)
Shunt
Resistor (mR)
Package
NTC
100
200
500
600
1000
9
18
90
125
600
4.4
10
20
20
20
YES
YES
YES
YES
YES
APTML10UM09R004T1AG
APTML20UM18R010T1AG
APTML50UM90R020T1AG
APTML60U12R020T1AG
APTML100U60R020T1AG
APTML102UM09R004T3AG
APTML202UM18R010T3AG
APTML502UM90R020T3AG
APTML602U12R020T3AG
APTML1002U60R020T3AG
MOS 5
SP1 or SP3
MOSFET Linear
MOS 4 Linear
Renewable Energy Power Modules
FULL BRIDGE
VCES
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Technology
Package
NTC
Part Number
(V)
50
75
100
50
50
25
2.1/1.5
2.1/1.5
2.1/1.5
83mR/1.5
45mR/1.5
3.2/1.7
SP3
SP3
SP3
SP1
SP3
SP3
SP3
YES
YES
YES
YES
YES
YES
YES
APTGV50H60T3G
APTGV75H60T3G
APTGV100H60T3G
APTCV40H60CT1G
APTCV50H60T3G
APTGV25H120T3G
APTGV50H120T3G
Mix Trench IGBT
& NPT IGBT
SP1
SP3
600
CoolMOS
or
Fast IGBT
Mix Trench IGBT
& CoolMOS
Mix Trench IGBT
& NPT IGBT
1200
50
3.2/1.7
+
+
PFC BYPASS DIODE PHASE LEG
VCES
(V)
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Technology
Package
NTC
Special
Part Number
38
38
27
27
45mR
45mR
83mR
83mR
SP1
SP1
SP1
SP1
N/A
N/A
N/A
N/A
10A PFC SiC diode
APTC60AM45BC1G
APTC60AM45B1G
APTC60AM83BC1G
APTC60AM83B1G
-
600
COOLMOS
10A PFC SiC diode
-
+
PFC FULL BRIDGE
VCES
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Technology
(V)
Package
NTC
Part Number
50
100
25
2.1/1.5
2.1/1.5
3.2/1.7
3.2/1.7
SP4
SP6-P
SP4
-
APTGV50H60BG
APTGV100H60BTPG
APTGV25H120BG
APTGV50H120BTPG
Mix Trench IGBT
600
& NPT IGBT
YES
-
YES
Fast IGBT
Mix Trench IGBT
& NPT IGBT
1200
50
SP6-P
+
+
PFC BYPASS DIODE FULL BRIDGE
VCES
(V)
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Technology
Package
NTC
Special
Part Number
38
38
29
29
1.5/45mR
1.5/45mR
1.5/70mR
70mR
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
20A PFC SiC diode
APTCV60HM45BC20T3G
APTCV60HM45BT3G
APTCV60HM70BT3G
APTC60HM70BT3G
Mix Trench IGBT
& CoolMos
-
-
-
600
COOLMOS
Mix Trench IGBT
& NPT IGBT
50
3.2/1.7
SP3F
YES
-
APTGV50H60BT3G
+
SECONDARY FAST RECTIFIER FULL BRIDGE
VCES
(V)
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Technology
Package
NTC
Special
Part Number
-
20A SiC antiparallel diode
38
38
29
29
50
1.5/45mR
1.5/45mR
1.5/70mR
70mR
SP3F
SP3F
SP3F
SP3F
SP3F
YES
YES
YES
YES
YES
APTCV60HM45RCT3G
APTCV60HM45RT3G
APTCV60HM70RT3G
APTC60HM70RT3G
APTGT50H60RT3G
Mix Trench IGBT
& CoolMos
-
-
-
-
600
COOLMOS
TRENCH 3
1.5
“CoolMOSTM” is a trademark of Infineon Technologies AG”.
31
Renewable Energy Power Modules
BOOST BUCK
VCES
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Technology
Package
NTC
Part Number
(V)
COOLMOS
TRENCH 3
70
100
24mR
1.5
SP3F
SP3F
YES
YES
APTC60BBM24T3G
APTGT100BB60T3G
600
600
SP1
3-LEVEL NPC INVERTER
VCES
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
Technology
(V)
Package
NTC
Part Number
20
30
30
50
50
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
2.1
2.1
1.85
1.8
2.0
SP1
SP3
SP1
SP3
SP1
SP3
SP3
SP6
SP6
SP6
SP1
SP3
SP3
SP6
SP6
-
APTGT20TL601G
APTGT30TL60T3G
APTGT30TL601G
APTGT50TL60T3G
APTGT50TL601G
APTGT75TL60T3G
APTGT100TL60T3G
APTGT150TL60G
APTGT200TL60G
APTGT300TL60G
APTGF30TL601G
APTGF50TL60T3G
APTGL60TL120T3G
APTGL240TL120G
APTGT100TL170G
YES
-
YES
-
YES
YES
-
-
TRENCH 3
600
75
SP3
100
150
200
300
30
50
60
240
100
-
-
YES
YES
-
NPT FAST
1200
1700
TRENCH 4
TRENCH 3
SP3F
-
RDS (ON)
VCE (on) IGBT (V)
VCES
(V)
Technology
Package
NTC
Part Number
Coolmos
(m1)
24
45
70
/ I (A)
c
1.5/75
1.5/75
1.5/50
1.5/30
SP3
SP3
SP3
SP3
YES
YES
YES
YES
APTCV60TLM24T3G
APTCV60TLM45T3G
APTCV60TLM70T3G
APTCV60TLM99T3G
Mix Trench IGBT
& CoolMOS
600
900
SP6 3-Level
99
Mix Trench IGBT
& CoolMOS
120
1.85/50
SP3
YES
APTCV90TL12T3G
SP1
SP3
T-TYPE 3-LEVEL INVERTER
VCES
IC (A)
VCE (on)(V)
at rated Ic
Technology
Package
NTC
Special
Part Number
(V)
TC=80º C
40
80
200
2.05
2.05
2.05
SP3F
SP3F
SP6
YES
YES
NO
10A/600V SiC
30A/600V SiC
-
APTGLQ40HR120CT3G NEW!
APTGLQ80HR120CT3G NEW!
600/1200
TRENCH 4 FAST
NEW!
APTGLQ200HR120G
“CoolMOSTM” is a trademark of Infineon Technologies AG”.
32
Power Modules with SiC Schottky Diodes
Operating Frequency vs Drain Current
Extremely fast switching of
SiC Schottky diode enables
designs with:
Applications:
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Silicone Carbide (SiC) Schottky Diodes offer superior
dynamic and thermal performance over conventional
Silicon power diodes. The main advantages of the SiC
Schottky Diodes are:
ꢀ ꢀꢀ(VVHQWLDOO\ꢀ]HURꢀIRUZDUGꢀDQGꢀUHYHUVHꢀUHFRYHU\ꢀ ꢀꢀ
reduced switch and diode switching losses
ꢀ ꢀꢀ7HPSHUDWXUHꢀLQGHSHQGHQWꢀVZLWFKLQJꢀEHKDYLRUꢀ ꢀVWDEOHꢀꢀ
high temperature performance
ꢀ ꢀ3RVLWLYHꢀWHPSHUDWXUHꢀFRHIÀFLHQWꢀRIꢀ9)ꢀ ꢀHDVHꢀRIꢀ
parallel operation
400
300
200
100
0
ꢀꢀ,PSURYHGꢀ6\VWHPꢀ(IÀFLHQF\
ꢀꢀ+LJKHUꢀ5HOLDELOLW\ꢀꢀꢀꢀ
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ꢀꢀ/RZHUꢀ6\VWHPꢀ&RVWꢀꢀꢀꢀꢀꢀ
Smaller EMI Filter
Smaller Magnetic Components
Smaller Heat-Sink
Smaller Switches, Eliminate Snubbers
ꢀ5HGXFHGꢀ6\VWHPꢀ6L]Hꢀ
SiC diode
Si diode
ꢀ
10
20
30
40
50
60
ꢀ ꢀꢀ8VDEOHꢀꢄꢅꢆ&ꢀ-XQFWLRQꢀ7HPSHUDWXUHꢀ ꢀVDIHO\ꢀRSHUDWHꢀꢀ
at higher temperatures
Drain Current (A)
Fewer / Smaller Components
Diode Power Modules with SiC Diodes
DUAL DIODE
VRRM
(V)
IF (A)
TC=100º C
VF (V)
TJ=25º C
DIODE Type
Package
Parallel
Anti-Parallel
20
30
40
50
60
90
20
30
40
50
60
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
SP1
SOT-227
SOT-227
SOT-227
SOT-227
SOT-227
APT2X20DC60J
APT2X30DC60J
APT2X40DC60J
APT2X50DC60J
APT2X60DC60J
-
APT2X20DC120J
APT2X30DC120J
APT2X40DC120J
APT2X50DC120J
APT2X60DC120J
APT2X21DC60J
APT2X31DC60J
APT2X41DC60J
APT2X51DC60J
APT2X61DC60J
APTDC902U601G
APT2X21DC120J
APT2X31DC120J
APT2X41DC120J
APT2X51DC120J
APT2X61DC120J
SOT-227
SP1
600
SiC
SiC
1200
FULL BRIDGE
VRRM
IF (A)
TC=100º C
VF (V)
TJ=25º C
DIODE Type
Package
Part Number
(V)
SP3F
6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
SOT-227
SP1
SP1
APT06DC60HJ
APTDC10H601G
APTDC20H601G
APTDC40H601G
APT40DC60HJ
APT10DC120HJ
APTDC20H1201G
APT20DC120HJ
APTDC40H1201G
APT40DC120HJ
10
20
40
40
10
20
20
40
40
600
SiC
SiC
SP1
SOT-227
SOT-227
SP1
SOT-227
SP1
1200
SOT-227
IGBT Power Modules with SiC Diodes
BOOST CHOPPER
VRRM
IC (A)
TC=80º C
VCE (on)(V)
at rated Ic
IGBT Type
Package
NTC
Part Number
(V)
50
90
15
25
50
25
40
2.1
2.1
3.2
3.2
3.2
SOT-227
SP1
SOT-227
SOT-227
SP1
-
APT50GF60JCU2
APTGF90DA60CT1G
APT15GF120JCU2
APT25GF120JCU2
APTGF50DA120CT1G
APT25GLQ120JCU2
APT40GLQ120JCU2
600
NPT
YES
-
-
YES
-
-
NPT
1200
2.05
2.05
SOT-227
SOT-227
NEW!
NEW!
TRENCH 4 FAST
DUAL CHOPPER
VRRM
IC (A)
TC=80º C
40
VCE (on)(V)
at rated Ic
2.05
IGBT Type
TRENCH 4 FAST
Package
SP3F
NTC
YES
Part Number
(V)
NEW!
APTGLQ40DDA120CT3G
1200
All Power Modules RoHS Compliant
33
Power Modules with SiC Schottky Diodes
TM
MOSFETs & COOLMOS Power Modules with SiC Diodes
+
SINGLE SWITCH SERIES FRED AND SIC PARALLEL DIODES
VDSS
(V)
RDS (ON)
(m1)
ID (A)
TC=80º C
MOSFET Type
Package
NTC
Part Number
option
option
1000
1200
MOS7
MOS7
65
100
110
86
SP6
SP6
APTM100UM65SCAVG
APTM120U10SCAVG
CHOPPER
SOT-227
VDSS
(V)
RDS (ON)
(m1)
ID (A)
TC=80º C
MOSFET Type
Package
NTC
…DA… or U2
APT58M50JCU2
APT50N60JCCU2
…SK… or U3
APT58M50JCU3
N/A
APTC60SKM24CT1G
N/A
APT33N90JCCU3
APTC90SKM60CT1G
APT26M100JCU3
N/A
APT20M120JCU3
N/A
500
600
MOS8
65
45
24
18
120
60
330
180
560
300
43
38
70
107
25
44
20
30
15
23
SOT-227
SOT-227
SP1
SP4
SOT-227
SP1
SOT-227
SP1
SOT-227
SP1
-
-
COOLMOS
YES
YES
-
YES
-
YES
-
YES
APTC60DAM24CT1G
APTC60DAM18CTG
APT33N90JCCU2
APTC90DAM60CT1G
APT26M100JCU2
APTM100DA18CT1G
APT20M120JCU2
APTM120DA30CT1G
900
1000
1200
COOLMOS
MOS 8
SP1
MOS 8
DUAL CHOPPER
SP3F
VDSS
(V)
RDS (ON)
(m1)
ID (A)
TC=80º C
MOSFET Type
Package
NTC
…DDA…
APTC60DDAM45CT1G
APTC60DDAM70CT1G
…DSK…
APTC60DSKM45CT1G
APTC60DSKM70CT1G
45
70
38
29
SP1
SP1
YES
YES
600
COOLMOS
SP4
+
PHASE LEG SERIES FRED AND SIC PARALLEL DIODES
VDSS
RDS (ON)
ID (A)
MOSFET Type
Package
NTC
Part Number
(V)
(m1)
TC=80º C
38
24
35
24
18
67
110
54
70
107
44
21
32
43
49
SP4
SP6
SP4
SP4
SP6
SP4
SP4
SP4
SP6
SP6
YES
-
YES
YES
-
YES
YES
YES
-
APTM50AM38SCTG
APTM50AM24SCG
APTC60AM35SCTG
APTC60AM24SCTG
APTC60AM18SCG
APTC90AM60SCTG
APTC80A15SCTG
APTC80A10SCTG
APTC80AM75SCG
APTM100A13SCG
500
MOS 7
600
900
COOLMOS
COOLMOS
COOLMOS
MOS 7
60
150
100
75
800
SP6
1000
130
-
+
FULL BRIDGE SERIES FRED AND SIC PARALLEL DIODES
VDSS
(V)
RDS (ON)
(m1)
ID (A)
TC=80º C
MOSFET Type
Package
NTC
Part Number
500
MOS 7
75
70
45
290
120
450
34
29
38
11
23
14
SP4
SP4
SP4
SP4
SP4
SP4
YES
YES
YES
YES
YES
YES
APTM50HM75SCTG
APTC60HM70SCTG
APTC60HM45SCTG
APTC80H29SCTG
APTC90H12SCTG
APTM100H45SCTG
600
COOLMOS
800
900
1000
COOLMOS
COOLMOS
MOS 7
6-P
TRIPLE PHASE LEG
VDSS
RDS (ON)
(m1)
ID (A)
TC=80º C
MOSFET Type
(V)
Package
NTC
Part Number
600
1000
COOLMOS
MOS 7
24
350
87
50
SP6-P
SP6-P
YES
YES
APTC60TAM21SCTPAG
APTM100TA35SCTPG
NEW!
NEW!
“CoolMOSTM” is a trademark of Infineon Technologies AG”.
34
SiC MOSFET Power Modules
T-TYPE 3-LEVEL INVERTER
VCES
RDS (ON)
ID (A)
TC=80º C
Technology
Package
NTC
Part Number
(V)
(m1)
SOT-227
110
40
20
50
SP3F
SP3F
YES
YES
APTMC120HR11CT3G
APTMC120HRM40CT3G
NEW!
NEW!
IGBT &
SiC MOSFET
600/1200
3-LEVEL NPC INVERTER
VCES
RDS (ON)
(m1)
ID (A)
TC=80º C
Technology
(V)
Package
NTC
Part Number
SP1
110
55
20
20
40
110
160
SP3F
SP3F
SP3F
SP6
YES
YES
YES
-
APTMC60TL11CT3AG NEW!
APTMC60TLM55CT3AG NEW!
APTMC60TLM20CT3AG NEW!
600
SiC MOSFET
14
APTMC60TLM14CAG
NEW!
SP3F
PHASE LEG
VCES
RDS (ON)
(m1)
ID (A)
TC=80º C
Technology
Package
NTC
Part Number
(V)
55
20
8
40
100
185
SP1
SP1
D3
YES
YES
-
APTMC120AM55CT1AG NEW!
APTMC120AM20CT1AG NEW!
APTMC120AM08CD3AG NEW!
1200
SiC MOSFET
SP6 3-Level
BOOST CHOPPER
VCES
RDS (ON)
(m1)
ID (A)
TC=80º C
Technology
(V)
Package
SOT-227
NTC
Part Number
40
20
50
100
-
-
APT50MC120JCU2
APT100MC120JCU2
NEW!
NEW!
1200
SiC MOSFET
D3
35
DIODE Power Modules
SINGLE DIODE
VRRM
(V)
DIODE
Type
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
LP4
LP4
200
400
600
1000
1200
500
500
450
430
400
1.1
1.5
1.8
2.3
2.5
APTDF500U20G
APTDF500U40G
APTDF450U60G
APTDF430U100G
APTDF400U120G
Non Isolated
Packages
FRED
SINGLE DIODE - NON ISOLATED PACKAGE
Half Pack
SDM
VRRM
(V)
DIODE
Type
IF (A)
per Diode
VF (V)
Package
TJ=25º C
Cathode to Base
HU10260
HU20260
SDM30004
HS18230
Cathode to Base
HU10260R
HU20260R
SDM30004R
HS18230R
100
200
300
180
240
180
180
240
120
180
240
120
180
240
240
240
240
600
400
30
FRED
1.35
1.1
Half-Pack
SDM
RECTIFIER
0.55
HS24230
HS18135
HS18140
HS24040
HS12045
HS18145
HS24045
HS123100
HS183100
HS243100
HS246150
HS247180
HS247200
HS24230R
HS18135R
HS18140R
HS24040R
HS12045R
HS18145R
HS24045R
HS123100R
HS183100R
HS243100R
HS246150R
HS247180R
HS247200R
35
0.70
0.71
0.56
0.55
0.72
0.57
40
SM1
SM2
45
SCHOTTKY
Half-Pack
0.91
100
0.86
0.87
0.88
0.89
150
180
200
3-PHASE BRIDGE
VRRM
(V)
DIODE
Type
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Part Number
SM2-1
SM3
40
90
30
50
50
52
75
75
100
100
130
150
160
200
200
1.3
1.3
1.6
1.5
1.45
1.8
1.6
1.38
1.9
1.7
1.8
SP1
SP1
SM1
SM1
SM2-1
SM2
SM2
SM2-1
SM3
SM2-1
SM3
SM3-1
SM3
APTDR40X1601G
APTDR90X1601G
1600
RECTIFIER
MSD30-08/12/16/18
MSD50-08/12/16/18
MSDM50-08/12/16/18
MSD52-08/12/16/18
MSD75-08/12/16/18
MSDM75-08/12/16/18
MSD100-08/12/16/18
MSDM100-08/12/16/18
MSD130-08/12/16/18
MSDM150-08/12/16/18
MSD160-08/12/16/18
MSD200-08/12/16/18
MSDM200-08/12/16/18
800
1200
1600
1800
RECTIFIER
1.28
1.65
1.55
1.31
SM3
SM3-1
SM3-1
SM4
+
DIODE
Type
3-PHASE BRIDGE THYRISTOR
VRRM
(V)
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Part Number
75
1.4
SM4
SM4
SM4
SM5
MSDT75-16
MSDT100-16
MSDT150-16
MSDT200-16
100
150
200
1.35
1.35
1.35
RECTIFIER
THYRISTOR
1600
SM5
All Power Modules RoHS Compliant
36
DIODE Power Modules
FULL BRIDGE
VRRM
(V)
DIODE
Type
IF (A)
TC=80º C
VF (V)
TJ=25º C
Package
Style
Part Number
30
60
100
200
30
30
30
50
60
60
75
100
100
200
30
1.0
1.0
1.0
1.0
1.6
1.8
1.8
1.6
1.8
1.8
1.6
1.6
1.6
1.6
2.1
2.1
2.1
2.1
2.6
2.6
1.6
1.6
2.6
2.6
1.6
2.5
2.4
1.8
1.8
2.2
2.2
SOT-227
SOT-227
SP4
SP6
SOT-227
SP1
SOT-227
SOT-227
SOT-227
SP1
SOT-227
SOT-227
SP1
APT30DF20HJ
APT60DF20HJ
APTDF100H20G
APTDF200H20G
APT30DL60HJ
APTDF30H601G
APT30DF60HJ
APT50DL60HJ
APT60DF60HJ
APTDF60H601G
APT75DL60HJ
APT100DL60HJ
APTDF100H601G
APTDF200H60G
APT30DF100HJ
APT60DF100HJ
APTDF100H100G
APTDF200H100G
APTDF30H1201G
APT30DF120HJ
APT35DL120HJ
APT50DL120HJ
APTDF60H1201G
APT60DF120HJ
APT75DL120HJ
APTDF100H1201G
APTDF200H120G
APT50DF170HJ
APT75DF170HJ
APTDF100H170G
APTDF200H170G
APT40DS04HJ
APT60DS04HJ
APT40DS10HJ
APT60DS10HJ
APT30DS20HJ
APT60DS20HJ
VJ248M
SOT-227
200
600
SP1
SP4
SP6
SOT-227
SOT-227
SP4
SP6
SP1
SOT-227
SOT-227
SOT-227
SP1
SOT-227
SOT-227
SP1
FRED
60
1000
1200
1700
100
200
30
30
35
50
60
60
75
100
200
50
SP6
SOT-227
SOT-227
SP4
75
100
200
40
60
40
60
30
60
SP6
45
100
200
SCHOTTKY
RECTIFIER
0.9
SOT-227
VJ
200
400
10
VJ
VJ448M
1.3
1.3
40
90
APT40DR160HJ
APT90DR160HJ
VJ247M
VJ447M
VJ647M
1600
SOT-227
250-700
450-900
660-1100
Controlled
Avalanche
Rectifiers
10
VJ
THYRISTOR & DIODE DOUBLER
VRRM
(V)
DIODE
Type
IF (A)
per Diode
VF/VTM (V)
TJ=25º C
Package
Style
Thyristor Diode Doubler
MSFC25-08/12/16
MSFC40-08/12/16
MSFC60-08/12/16
MSFC90-08/12/16
MSFC110-08/12/16
MSFC130-08/12/16
MSFC160-08/12/16
Thyristor Doubler
MSTC25-08/12/16
MSTC40-08/12/16
MSTC60-08/12/16
MSTC90-08/12/16
MSTC110-08/12/16
MSTC130-08/12/16
MSTC160-08/12/16
D1
25
40
60
1.8
1.95
1.65
1.65
1.65
1.8
800
1200
1600
SF1
D1
RECTIFIER
THYRISTOR
90
110
130
160
1.7
SF1
37
DIODE Power Modules
COMMON CATHODE - COMMON ANODE - DOUBLER
VRRM
(V)
DIODE
Type
IF (A)
per Diode TJ=25º C
VF (V)
Package
SP6
Common Cathode
APTDF400KK20G
APTDF400KK60G
APTDF400KK100G
APTDF400KK120G
APTDF400KK170G
MSKD36-08/12/16/18
MSKD60-08/12/16/18
MSKD70-08/12/16/18
MSKD100-08/12/16/18
MSKD120-08/12/16/18
MSKD165-08/12/16/18
MSKD200-08/12/16/18
UFT7020
Common Anode
APTDF400AA20G
APTDF400AA60G
APTDF400AA100G
APTDF400AA120G
APTDF400AA170G
MSAD36-08/12/16/18
MSAD60-08/12/16/18
MSAD70-08/12/16/18
MSAD100-08/12/16/18
MSAD120-08/12/16/18
MSAD165-08/12/16/18
MSAD200-08/12/16/18
UFT7020A
Doubler
APTDF400AK20G
APTDF400AK60G
APTDF400AK100G
APTDF400AK120G
APTDF400AK170G
MSCD36-08/12/16/18
MSCD60-08/12/16/18
MSCD70-08/12/16/18
MSCD100-08/12/16/18
MSCD120-08/12/16/18
MSCD165-08/12/16/18
MSCD200-08/12/16/18
UFT7020D
200
600
1000
1200
1700
1.0
1.6
2.1
2.4
2.2
FRED
400
36
60
70
100
120
165
200
35
SD1
SD2
800-1200-
1600-1800
RECTIFIER
1.15
SD1
0.95
0.98
0.98
0.98
1.25
0.98
1.20
1.25
1.25
1.20
1.35
1.35
1.35
1.35
0.47
0.55
0.65
0.76
0.53
0.65
0.74
0.68
0.62
0.77
0.57
0.55
0.55
0.65
0.8
0.74
0.78
0.82
0.73
0.89
0.96
0.98
0.90
0.82
0.86
0.94
0.96
0.98
0.91
0.90
0.85
0.85
Mini-Mod
TwinTower
TO-249 Flat Pack
60
70
UFT12520
UFT14020
UFT20020
UFT20120
UFT40020
UFT7130
UFT14140
UFT20140
UFT7150
UFT7260SMxC
UFT14260
UFT12780
UFT14280
FST16230
CPT50235
CPT60035
CPT30040
FST8145
FST16145
FST16045
CPT20145
CPT30145
CPT30045
CPT40145
CPT50145
CPT60145
CPT60045
CPT12050
FST16050
CPT30050
CPT30060
CPT50060
CPT40080
UFT12520A
UFT14020A
UFT20020A
UFT20120A
UFT40020A
UFT7130A
UFT14140A
UFT20140A
UFT7150A
UFT7260SMxA
UFT14260A
UFT12780A
UFT14280A
FST16230A
CPT50235A
CPT60035A
CPT30040A
FST8145A
FST16145A
FST16045A
CPT20145A
CPT30145A
CPT30045A
CPT40145A
CPT50145A
CPT60145A
CPT60045A
CPT12050A
FST16050A
CPT30050A
CPT30060A
CPT50060A
CPT40080A
UFT12520D
UFT14020D
UFT20020D
UFT20120D
UFT40020D
UFT7130D
UFT14140D
UFT20140D
UFT7150D
UFT7260SMxD
UFT14260D
UFT12780D
UFT14280D
FST16230D
CPT50235D
CPT60035D
CPT30040D
FST8145D
FST16145D
FST16045D
CPT20145D
CPT30145D
CPT30045D
CPT40145D
CPT50145D
CPT60145D
CPT60045D
CPT12050D
FST16050D
CPT30050D
CPT30060D
CPT50060D
CPT40080D
200
100
TwinTower
200
35
70
300
400
500
600
Mini-Mod
TO-249 Flat Pack
TwinTower
FRED
SD2
100
35
Mini-Mod
70
60
70
TO-249 Flat Pack
TwinTower
TO-249 Flat Pack
TO-249 Flat Pack
Non Isolated
Packages
800
30
30
250
300
150
40
80
80
100
150
150
200
250
35
TwinTower
40
SM1
SM2
SM3
SM4
SM5
SM6
Mini-Mod
TO-249 Flat Pack
x option for Mini-Mod Surface Mount Package
45
50
TwinTower
Mini-Mod
Surface Mount
300
60
80
TO-249 Flat Pack
TwinTower
SCHOTTKY
150
Mini-Mod
60
80
250
200
80
150
200
40
60
75
80
TO-249 Flat Pack
TwinTower
FST16090
CPT30090
CPT40090
FST80100
FST60100
FST153100
FST160100
CPT300100
CPT400100
CPT500100
CPT600100
CPT600150
FST16090A
CPT30090A
CPT40090A
FST80100A
FST16090D
CPT30090D
CPT40090D
FST80100D
90
Mini-Mod
TO-249
9 Pins
TO-249
Flat Pack
FST60100A
FST60100D
FST153100A
FST160100A
CPT300100A
CPT400100A
CPT500100A
CPT600100A
CPT600150A
FST153100D
FST160100D
CPT300100D
CPT400100D
CPT500100D
CPT600100D
CPT600150D
TO-249 Flat Pack
100
150
150
200
250
Twin Tower
Twin Tower
Non Isolated
300
10-pin TO-249
All Power Modules RoHS Compliant
38
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Package Outlines
D3 Pak
or TO-268
TO-220 [KF]
Revised
8/29/97
TO-220 3-Lead
TO-220 2-Lead
TO-247 3-Lead
T-MAX®
C
a th o d e
C
A
a th o d e
n o d e
TO-247 2-Lead
TO-264
264 MAX™
ISOTOP® or SOT-227
ISOTOP® is a registered trademark of SGS Thomson
Refer to web page for additional package outline drawings
39
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
D1
D3
D4
LP4
SP1
LP8
ꢀ1.6±±.ꢀ
4.3±±.2ꢀ
Rꢀ
4ꢀ±±.2ꢀ
SP2
SP3
73,4 ±±,ꢀ
2 8
1 7
R ꢀ
1
12
64 ±±,ꢁꢀ
40
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
SP3F
SF1
SP4
SP6 - 3 outputs
2,80
x 0,5
7,8 MAX
108
93
13,50
7,50
14
0
7,50
13,50
Ø
6,40
(4x)
(4x)
Ø
12
28
28
48
SP6 3-Level
SP6 - 4 outputs
2,80
x 0,5
2,80
x 0,5
7,8 MAX
7,8 MAX
108
93
108
93
M
5
M
(4x)
12
5
(4x)
18,20
13,50
13,50
7,50
7,50
5,10
0
0
7,50
7,50
13,50
17
14
13,50
Ø
6,40
12
(4x)
(4x)
Ø
6,40
(4x)
Ø
27
27
Ø
12
(4x)
28
27
48
48
48
48
SD1
SP6-P
41
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
SD2
SM1
SM2-1
SM2
SM3-1
SM3
SM4
SM5
42
Pin out location depends on the module configuration. Please refer to
the product datasheet for pins assignment. All dimensions in millimeters.
Power Module Outlines
SDM
VJ
A
Dim. Inches
Millimeters
D
Min.
Max.
Min.
Max. Notes
B
A
B
C
D
2.650
1.260
.925
67.31
32.00
23.49
---
1.240
---
---
31.49
---
50.80 BSC
F
G
2.00 BSC
F
Dia.
0.320
0.340
8.13
8.64
H
H
5/16-18 UNC
G
H
K
L
M
0.630
0.610
---
---
0.640
.100
16.00
15.49
---
---
K
16.26
2.54
4.88
0.182
0.192
4.62
C
L
Standard Polarity: Base plate is cathode
M
Reverse Polarity: Base plate is anode
Mini-Mod
Mini-Mod Surface Mount
TO-249
9 Pin TO-249
Half Pak
Twin Tower
D
G
Dim. Inches
Millimeter
J
Minimum Maximum Minimum Maximum Notes
1.52
.725
.605
1.182
.745
.152
1.56
.775
.625
1.192
.755
.160
38.61
18.42
15.37
30.02
18.92
3.86
39.62
19.69
15.88
30.28
19.18
4.06
A
B
C
D
E
B
K
Sq.
Dia.
F
C
F
H
E
G
H
J
1/4-20 UNC-2B
13.34
3.96
.525
.156
.580
.160
14.73
4.06
K
L
12.57
3.05
.495
.120
.505
.130
12.83
3.30
Dia.
Std. Polarity: Base is cathode
Rev. Polarity: Base is anode
A
L
43
www.microsemi.com
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Bend, Oregon 97702
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E-Mail: rsmeurope@microsemi.com
© 2012 Microsemi Corporation
Microsemi reserves the right to change, without notice, the specifications
and information contained herein.
MS5-001-12
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