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APT20GN60BDQ2(G) [MICROSEMI]

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3;

APT20GN60BDQ2(G)


元器件型号：	APT20GN60BDQ2(G)
生产厂家：	MICROSEMI CORPORATION
描述和应用：	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247, ROHS COMPLIANT PACKAGE-3 局域网栅功率控制晶体管
PDF文件：	总9页 (文件大小：237K)
下载文档：	下载PDF数据表文档文件
型号参数：APT20GN60BDQ2(G)参数

APT20GN60BG

Power Semiconductors Power Modules

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0 MICROSEMI

APT20GN60BG

Thunderbolt High Speed NPT IGBT

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8 MICROSEMI

APT20GN60BG

Power Semiconductors Power Modules RF Power MOSFETs

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13 MICROSEMI

APT20GN60BG

IGBT

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30 ADPOW

APT20GN60K

High Speed PT IGBT

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11 MICROSEMI

APT20GN60KG

High Speed PT IGBT

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6 MICROSEMI

APT20GN60S

Thunderbolt High Speed NPT IGBT

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6 MICROSEMI

APT20GN60SDQ1

High Speed PT IGBT

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9 MICROSEMI

APT20GN60SDQ1G

High Speed PT IGBT

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12 MICROSEMI

APT20GN60SDQ2(G)

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, D3PAK-3

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0 MICROSEMI

APT20GN60SG

Thunderbolt High Speed NPT IGBT

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19 MICROSEMI

APT20GS60BRDQ1

Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

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6 MICROSEMI

APT20GS60BRDQ1G

Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

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25 MICROSEMI

APT20GS60KR

Thunderbolt High Speed NPT IGBT

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4 MICROSEMI

APT20GS60KR(G)

Insulated Gate Bipolar Transistor, 37A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-3

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0 MICROSEMI

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