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APT20GN60KG

更新时间：2024-09-18 08:13:05
品牌：MICROSEMI
描述：High Speed PT IGBT

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APT20GN60KG 概述

High Speed PT IGBT 高速PT IGBT IGBT

APT20GN60KG 规格参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：compliant风险等级：5.03
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
最大集电极电流 (IC)：63 A集电极-发射极最大电压：600 V
配置：SINGLE门极发射器阈值电压最大值：6.5 V
门极-发射极最大电压：30 VJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：136 W认证状态：Not Qualified
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：TIN SILVER COPPER端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：255 ns标称接通时间 (ton)：26 ns
Base Number Matches：1

APT20GN60KG 数据手册

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600V  
APT20GN60K  
APT20GN60KG*  
*G Denotes RoHS Compliant, Pb Free Terminal Finish.  
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra  
low VCE(ON) and are ideal for low frequency applications that require absolute minimum  
conduction loss. Easy paralleling is a result of very tight parameter distribution and a  
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive  
design and minimizes losses.  
TO-220  
• 600V Field Stop  
• Trench Gate: Low VCE(on)  
• Easy Paralleling  
• 6µs Short Circuit Capability  
• 175°C Rated  
C
E
G
Applications:Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS  
MAXIMUM RATINGS  
All Ratings: T = 25°C unless otherwise specified.  
C
Parameter  
Symbol  
UNIT  
APT20GN60K(G)  
VCES  
Collector-Emitter Voltage  
600  
Volts  
VGE  
IC1  
Gate-Emitter Voltage  
±±0  
40  
Continuous Collector Current @ TC = 25°C  
IC2  
Continuous Collector Current @ TC = 110°C  
24  
Amps  
1
Pulsed Collector Current  
@ TC = 175°C  
ICM  
60  
Switching Safe Operating Area @ TJ = 175°C  
60A @ 600V  
1±6  
SSOA  
PD  
Total Power Dissipation  
Watts  
°C  
TJ,TSTG  
Operating and Storage Junction Temperature Range  
-55 to 175  
±00  
TL  
Max. Lead Temp. for Soldering: 0.06±" from Case for 10 Sec.  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
TYP  
MAX  
Units  
V(BR)CES  
VGE(TH)  
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 2mA)  
Gate Threshold Voltage (VCE = VGE, IC = 290µA, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C)  
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C)  
600  
5.0  
1.1  
5.8  
1.5  
1.7  
6.5  
1.9  
Volts  
VCE(ON)  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)  
25  
ICES  
IGES  
µA  
nA  
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)  
1000  
±00  
Gate-Emitter Leakage Current (VGE = ±20V)  
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
Microsemi Website - http://www.microsemi.com  
APT20GN60K(G)  
DYNAMIC CHARACTERISTICS  
Test Conditions  
Capacitance  
Characteristic  
Symbol  
MIN  
TYP  
1110  
50  
MAX  
UNIT  
Cies  
Coes  
Cres  
VGEP  
Qg  
Input Capacitance  
Output Capacitance  
pF  
V
GE = 0V, VCE = 25V  
f = 1 MHz  
Reverse Transfer Capacitance  
Gate-to-Emitter Plateau Voltage  
±5  
9.5  
120  
10  
V
Gate Charge  
±
V
GE = 15V  
Total Gate Charge  
VCE = ±00V  
IC = 20A  
Qge  
Qgc  
nC  
Gate-Emitter Charge  
70  
Gate-Collector ("Miller") Charge  
TJ = 175°C, RG = 4.±Ω 7, VGE  
=
SSOA  
Switching Safe Operating Area  
Short Circuit Safe Operating Area  
A
60  
6
15V, L = 100µH,VCE = 600V  
VCC = ±60V, VGE = 15V,  
TJ = 150°C, RG = 4.±Ω 7  
µs  
SCSOA  
td(on)  
Inductive Switching (25°C)  
9
Turn-on Delay Time  
Current Rise Time  
Turn-off Delay Time  
Current Fall Time  
tr  
VCC = 400V  
VGE = 15V  
IC = 20A  
10  
ns  
td(off)  
140  
95  
tf  
RG = 4.±Ω 7  
4
Eon1  
Eon2  
2±0  
260  
580  
9
Turn-on Switching Energy  
TJ = +25°C  
5
µJ  
ns  
Turn-on Switching Energy (Diode)  
6
Eoff  
Turn-off Switching Energy  
td(on)  
Inductive Switching (125°C)  
CC = 400V  
Turn-on Delay Time  
Current Rise Time  
Turn-off Delay Time  
tr  
V
10  
td(off)  
tf  
V
GE = 15V  
160  
1±0  
250  
450  
750  
IC = 20A  
RG = 4.±Ω 7  
Current Fall Time  
4 4  
Eon1  
Eon2  
Eoff  
Turn-on Switching Energy  
TJ = +125°C  
55  
Turn-on Switching Energy (Diode)  
µJ  
66  
Turn-off Switching Energy  
THERMAL AND MECHANICAL CHARACTERISTICS  
Symbol  
Characteristic  
UNIT  
MIN  
TYP  
MAX  
1.1  
Rθ  
Junction to Case (IGBT)  
Junction to Case (DIODE)  
Package Weight  
JC  
°C/W  
gm  
Rθ  
N/A  
JC  
WT  
1.2  
1
2
±
4
Repetitive Rating: Pulse width limited by maximum junction temperature.  
For Combi devices, Ices includes both IGBT and FRED leakages  
See MIL-STD-750 Method ±471.  
Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current  
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.  
5
Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching  
loss. (See Figures 21, 22.)  
6
7
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 2±.)  
RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)  
Microsemi reserves the right to change, without notice, the specifications and information contained herein.  
TYPICAL PERFORMANCE CURVES  
APT20GN60K(G)  
90  
80  
70  
60  
50  
40  
±0  
20  
10  
0
40  
V
= 15V  
15V  
GE  
14V  
1±V  
±5  
±0  
25  
20  
15  
10  
5
TJ = 25°C  
12V  
TJ = 125°C  
11V  
TJ = 175°C  
10V  
9V  
8V  
TJ = -55°C  
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
±.0  
0
V
5
10  
, COLLECTER-TO-EMITTER VOLTAGE (V)  
CE  
15  
20  
25  
±0  
V
, COLLECTER-TO-EMITTER VOLTAGE (V)  
CE  
FIGURE 1, Output Characteristics(T = 25°C)  
FIGURE 2, Output Characteristics (T = 125°C)  
J
J
60  
16  
14  
12  
250µs PULSE  
TEST<0.5 % DUTY  
CYCLE  
I
T
= 20A  
= 25°C  
C
J
50  
40  
±0  
20  
V
= 120V  
CE  
TJ = -55°C  
TJ = 25°C  
V
= ±00V  
CE  
TJ = 125°C  
TJ = 175°C  
10  
8
V
= 480V  
CE  
6
4
10  
0
2
0
0
5
10  
15  
0
20  
40  
60  
80 100 120 140  
V
, GATE-TO-EMITTER VOLTAGE (V)  
GATE CHARGE (nC)  
GE  
FIGURE 3, Transfer Characteristics  
FIGURE 4, Gate Charge  
±.0  
2.5  
2.0  
±.0  
2.5  
2.0  
1.5  
1.0  
TJ = 25°C.  
250µs PULSE TEST  
<0.5 % DUTY CYCLE  
I
= 40A  
C
I
= 40A  
C
I = 20A  
C
I
= 20A  
C
1.5  
1.0  
I = 10A  
C
I
= 10A  
C
0.5  
0
0.5  
0
VGE = 15V.  
250µs PULSE TEST  
<0.5 % DUTY CYCLE  
6
8
10  
12  
14  
16  
0
25  
50  
75 100 125 150 175  
V
, GATE-TO-EMITTER VOLTAGE (V)  
T , Junction Temperature (°C)  
GE  
J
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage  
FIGURE 6, On State Voltage vs Junction Temperature  
1.40  
60  
50  
40  
±0  
20  
1.±0  
1.20  
1.10  
1.00  
0.90  
0.80  
10  
0
-50 -25  
0
25 50 75 100 125 150 175  
-50 -25  
0
25 50 75 100 125 150 175  
T , JUNCTION TEMPERATURE (°C)  
T , CASE TEMPERATURE (°C)  
J
C
FIGURE 7, Breakdown Voltage vs. Junction Temperature  
FIGURE 8, DC Collector Current vs Case Temperature  
APT20GN60K(G)  
250  
200  
150  
100  
50  
12  
10  
8
V
= 15V  
GE  
6
VGE =15V,TJ=125°C  
4
VGE =15V,TJ=25°C  
VCE = 400V  
TJ = 25°C, TJ =125°C  
G = 4.±Ω  
L = 100 µH  
2
VCE = 400V  
RG = 4.±Ω  
L = 100 µH  
R
0
0
I
5
10 15 20 25 ±0 ±5 40 45  
, COLLECTOR TO EMITTER CURRENT (A)  
5
10 15 20 25 ±0 ±5 40 45  
, COLLECTOR TO EMITTER CURRENT (A)  
I
CE  
CE  
FIGURE 9,Turn-On Delay Time vs Collector Current  
FIGURE 10,Turn-Off Delay Time vs Collector Current  
25  
140  
R
G = 4.±Ω, L = 100µH, VCE = 400V  
120  
TJ = 125°C, VGE = 15V  
20  
15  
10  
100  
80  
60  
40  
20  
T
J = 25°C, VGE = 15V  
T
J = 25 or 125°C,VGE = 15V  
5
0
R
G = 4.±Ω, L = 100µH, VCE = 400V  
10 15 20 25 ±0 ±5 40 45  
, COLLECTOR TO EMITTER CURRENT (A)  
0
I
5
10  
15 20 25 ±0 ±5 40 45  
, COLLECTOR TO EMITTER CURRENT (A)  
5
I
CE  
CE  
FIGURE 11, Current Rise Time vs Collector Current  
FIGURE 12, Current Fall Time vs Collector Current  
1400  
1200  
1000  
800  
1400  
1200  
1000  
800  
600  
400  
200  
0
V
V
R
=
=
400V  
+15V  
V
V
R
=
=
400V  
+15V  
CE  
GE  
CE  
GE  
= 4.±Ω  
= 4.±Ω  
G
G
TJ = 125°C  
T
J = 125°C  
600  
TJ = 25°C  
400  
200  
0
T
J = 25°C  
5
10 15 20 25 ±0 ±5 40 45  
, COLLECTOR TO EMITTER CURRENT (A)  
5
10 15 20 25 ±0 ±5 40 45  
, COLLECTOR TO EMITTER CURRENT (A)  
I
I
CE  
CE  
FIGURE 13,Turn-On Energy Loss vs Collector Current  
FIGURE 14, Turn Off Energy Loss vs Collector Current  
±500  
1400  
V
V
T
=
=
400V  
+15V  
V
V
R
=
=
400V  
+15V  
CE  
GE  
CE  
GE  
E
40A  
on2,  
= 125°C  
= 4.±Ω  
±000  
2500  
2000  
1500  
1000  
500  
J
1200  
1000  
800  
600  
400  
200  
0
G
E
40A  
E
40A  
on2,  
off,  
E
40A  
off,  
E
E
20A  
off,  
10A  
off,  
E
20A  
E
off,  
E
20A  
E
10A  
on2,  
off,  
E
20A  
on2,  
E
10A  
on2,  
10A  
on2,  
0
0
10  
20  
±0  
40  
50  
0
25  
50  
75  
100  
125  
R , GATE RESISTANCE (OHMS)  
T , JUNCTION TEMPERATURE (°C)  
G
J
FIGURE 15, Switching Energy Losses vs. Gate Resistance  
FIGURE 16, Switching Energy Losses vs Junction Temperature  
TYPICAL PERFORMANCE CURVES  
APT20GN60K(G)  
70  
60  
50  
40  
±0  
20  
10  
0
2,000  
Cies  
1,000  
500  
100  
50  
Coes  
Cres  
10  
0
10  
20  
±0  
40  
50  
0
100 200 ±00 400 500 600 700  
V , COLLECTOR TO EMITTER VOLTAGE  
CE  
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)  
CE  
Figure 17, Capacitance vs Collector-To-Emitter Voltage  
Figure 18,Minimim Switching Safe Operating Area  
1.20  
D = 0.9  
1.00  
0.7  
0.5  
0.±  
0.80  
0.60  
0.40  
Note:  
t
1
SINGLE PULSE  
t
2
0.20  
0
t
1
0.1  
t
2
Duty Factor D =  
Peak T = P x Z  
/
+ T  
C
0.05  
J
DM  
θJC  
10-5  
10-4  
10-±  
10-2  
10-1  
1.0  
RECTANGULAR PULSE DURATION (SECONDS)  
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration  
140  
100  
RC MODEL  
Junction  
temp. (°C)  
50  
0.451  
0.±24  
0.±2±  
0.00078  
0.00288  
0.0501  
Fmax = min (fmax, fmax2  
)
0.05  
fmax1  
=
t d(on) + tr + td(off) + tf  
Power  
(watts)  
Pdiss - Pcond  
Eon2 + E off  
fmax2  
Pdiss  
=
T
T
=
125°C  
75°C  
J
=
C
D = 50 %  
V
R
TJ - T C  
R θJC  
10  
7
=
400V  
=
CE  
= 4.±Ω  
G
Case temperature. (°C)  
5
10  
15  
20  
25  
±0  
I , COLLECTOR CURRENT (A)  
C
Figure 20, Operating Frequency vs Collector Current  
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL  
APT20GN60K(G)  
Gate Voltage  
10%  
APT15DQ60  
T
= 125°C  
J
td(on)  
tr  
VCE  
IC  
VCC  
Collector Current  
5%  
90%  
10%  
5%  
Collector Voltage  
A
Switching Energy  
D.U.T.  
Figure 22,Turn-on Switching Waveforms and Definitions  
Figure 21, Inductive Switching Test Circuit  
90%  
Gate Voltage  
T
= 125°C  
J
td(off)  
Collector Voltage  
90%  
tf  
10%  
0
Collector Current  
Switching Energy  
Figure 23,Turn-off Switching Waveforms and Definitions  
TO-220 Package Outline  
e1 SAC: Tin, Silver, Copper  
10.66 (.420)  
9.66 (.380)  
2.80 (.110)  
2.60 (.102)  
5.33 (.210)  
4.83 (.190)  
7.10 (.280)  
6.70 (.263)  
3.40 (.133) Dia.  
3.10 (.123)  
3.70 (.145)  
2.20 (.126)  
12.192 (.480)-  
9.912 (.390)  
3.683 (.145)-  
MAX.-  
14.73 (.580)  
12.70 (.500)  
Gate  
0.48 (.019)  
0.44 (.017)  
Collector  
Drain  
ESmouitrtceer  
2.85 (.112)  
2.65 (.104)  
1.01 (.040) 3-Plcs.  
.83 (.033)  
1.77 (.070) 3-Plcs.  
1.15 (.045)  
2.79 (.110)  
2.29 (.090)  
4.80 (.189)  
4.60 (.181)  
5.33 (.210)  
4.83 (.190)  
Dimensions in Millimeters and (Inches)  
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583  
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262  
and foreign patents. US and Foreign patents pending. All Rights Reserved.  

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